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Chapter 5 Transistor Bias Circuits

Chapter 5 Transistor Bias Circuits. Objectives Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias,

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Page 1: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Chapter 5 Transistor Bias

Circuits

Page 2: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

ObjectivesObjectives

Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias, base bias, and collector-feedback bias circuits.

Basic troubleshooting for transistor bias circuits

Page 3: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Lecture’s outlineLecture’s outline

• Objectives • Introduction• DC operating point• Voltage-divider bias• Other bias methods

– Base bias– Emitter bias– Collector-feedback bias

• Troubleshooting• Summary

Page 4: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

IntroductionIntroductionThe term biasing is used for application of dc voltages to establish a fixed level of current and voltage.

Transistor must be properly biased with dc voltage to operate as a linear amplifier.

If amplifier is not biased with correct dc voltages on input and output, it can go into saturation or cutoff when the input signal applied.

There are several methods to establish DC operating point.

We will discuss some of the methods used for biasing transistors.

Page 5: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

DC OPERATING POINTDC OPERATING POINT

Page 6: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

The DC Operating PointThe DC Operating Point

• The goal of amplification in most cases is to increase the amplitude of an ac signal without altering it.

• Improper biasing can cause distortion in the output signal.

Page 7: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

The DC Operating PointThe DC Operating PointThe purpose of biasing a circuit is to establish a proper stable dc operating point (Q-point). The dc operating point between saturation and cutoff is called the Q-point. The goal is to set the Q-point such that that it does not go into saturation or cutoff when an ac signal is applied.

Page 8: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,
Page 9: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

• Q-point of a circuit: dc operating point of amplifier specified by voltage and current values (VCE and IC). These values are called the coordinates of Q-point.

• Refer to figure a, given IB = 200μA and βDC=100.

IC=βDCIB so IC=20mA and

• Figure b, VBB is increased to produce IB of 300μA and IC of 30mA.

• Figure c, VBB is increased to produce IB of 400μA and IC=40mA. So, VCE is:

VmAVRIVV CCCCCE 6.54.410)220)(20(10

VmAVRIVV CCCCCE 4.36.610)220)(30(10

VmAVRIVV CCCCCE 2.18.810)220)(40(10

Page 10: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

DC Operating Point-DC load lineDC Operating Point-DC load line•Recall that the collector characteristic curves graphically show the relationship of collector current and VCE for different base currents.

• When IB increases, IC increases and VCE decreases or vice-versa. Each separate Q-point is connected through dc load line. At any point along line, values of IB, IC and VCE can be picked off the graph.

•Dc load line intersect VCE axis at 10V, where VCE=VCC. This is cutoff point because IB and IC zero. Dc load line also intersect IC axis at 45.5mA ideally. This is saturation point because IC is max and VCE=0.

Page 11: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

DC Operating Point-Linear operationDC Operating Point-Linear operation•Region between saturation and cutoff is linear region of transistor’s operation. The output voltage is ideally linear reproduction of input if transistor is operated in linear region.

•Let’s look at the effect a superimposed ac voltage has on the circuit. IB vary sinusoidally 100μA above and below Q-point of 300μA. IC vary up and down 10mA of its Q-point(30mA). VCE varies 2.2V above and below its Q-point of 3.4V.

•However, as you might already know, applying too much ac voltage to the base would result in driving the collector current into saturation or cutoff resulting in a distorted or clipped waveform.

•When +ve peak is limited, transistor is in cutoff. When –ve peak is limited, transistor is in saturation.

Page 12: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Variations in IC and VCE as a result of variation Variations in IC and VCE as a result of variation in IB.in IB.

Page 13: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Graphical load line illustration of transistor being driven intosaturation or cutoff

Page 14: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Graphical load line for transistor in saturation and cutoff

Page 15: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Example 1Example 1

• Determine Q-point in figure below and find the maximum peak value of base current for linear operation. Assume βDC=200.

Page 16: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

SolutionSolution

• Q-point is defined by values of IC and VCE.

• Q-point is at IC=39.6mA and VCE=6.93V. Since IC(cutoff)=0, we need to know IC(sat) to determine variation in IC can occur and still in linear operation.

• Before saturation is reached, IC can increase an amount equal to: IC(sat) – ICQ = 60.6mA – 39.6mA = 21mA.

AkR

VVI

B

BEBBB 198

47

7.010

mAII BDCC 6.39)198(200

VmAVRIVV CCCCCE 93.6)330)(6.39(20

mAR

VI

C

CCsatC 6.60

330

20)(

Page 17: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Solution cont..Solution cont..

• However, IC can decrease by 39.6mA before cutoff (IC=0) is reached. Since the gap of Q-point with saturation point is less than gap between Q-point and cutoff, so 21mA is the max peak variation of IC.

• The max peak variation of IB is:

AmI

IDC

peakcpeakb

105

200

21)()(

Page 18: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

VOLTAGE-DIVIDER BIASVOLTAGE-DIVIDER BIAS

Page 19: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Voltage-Divider BiasVoltage-Divider Bias

• Voltage-divider bias is the most widely used type of bias circuit. Only one power supply is needed and voltage-divider bias is more stable( independent) than other bias types. For this reason it will be the primary focus for study.

• dc bias voltage at base of transistor is developed by a resistive voltage-divider consists of R1 and R2.

• Vcc is dc collector supply voltage. 2 current path between point A and ground: one through R2 and the other through BE junction and RE.

Page 20: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Voltage divider biasVoltage divider bias

• If IB is much smaller than I2, bias circuit is viewed as voltage dividerof R1 and R2 as shown in Figure a.• If IB is not small enough to be neglected, dc input resistance RIN(base) must be considered. RIN(base) is in parallel with R2 asshown in figure b.

Page 21: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Input resistance at transistor baseInput resistance at transistor base• VIN is between base and ground and IIN is the current into base.

•By Ohm’s Law,

RIN(base) = VIN / IIN

• Apply KVL, VIN=VBE+IERE

• Assume VBE<<IERE, so VIN≈IERE

•Since IE≈IC=βDCIB,

VIN≈ βDCIBRE

•IN=IB, so

RIN(base)= βDCIBRE / IB

RIN(base) = DCRE

Page 22: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Analysis of Voltage-Divider Bias CircuitAnalysis of Voltage-Divider Bias Circuit

Page 23: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Analysis of voltage divider bias circuitAnalysis of voltage divider bias circuit

Total resistance from base to ground is:

A voltage divider is formed by R1 and resistance from base to ground in parallel with R2.

If DCRE >>R2, (at least ten times greater), then the formula simplifies to

EDC

baseIN

RR

RR

2

)(2

CCEDC

EDCB V

RRR

RRV

21

2

CCB VRR

RV

21

2

Page 24: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Analysis of Voltage-Divider Bias CircuitAnalysis of Voltage-Divider Bias Circuit

• Now, determine emitter voltage VE.

VE=VB – VBE

• Using Ohm’s Law, find emitter current IE.

IE = VE / RE

• All the other circuit values

IC ≈ IE

VC = VCC – ICRC

• To find VCE, apply KVL:

VCC – ICRC – IERE – VCE =0• Since IC ≈ IE,

VCE ≈ VCC – IC (RC + RE)

Page 25: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Example 2Example 2• Determine VCE and IC in voltage-divider biased transistor

circuit below if βDC=100.

Page 26: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Solution Solution 1. Determine dc input resistance at base to see if it can be neglected.

2. RIN(base)=10R2, so neglect RIN(base). Then, find base voltage

3. So, emitter voltage

4. And emitter current

5. Thus,

6. And VCE is

kRR EDCbaseIN 56)560(100)(

VVk

kV

RR

RV CCB 59.310

6.15

6.5

21

2

VVVV BEBE 89.27.059.3

mAR

VI

E

EE 16.5

560

89.2

mAIC 16.5

VkmRRIVV ECCCCCE 95.1)56.1(16.510)(

Page 27: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Voltage-Divider Bias for PNP TransistorVoltage-Divider Bias for PNP Transistor

Pnp transistor has opposite polarities from npn. To obtain pnp, required negative collector supply voltage or with a positive emitter supply voltage. The analysis of pnp is basically the same as npn.

Page 28: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Analysis of voltage bias for pnp transistorAnalysis of voltage bias for pnp transistor

• Base voltage

• Emitter voltage

• By Ohm’s Law,

• And,

EEEDC

B VRRR

RV

21

1

BEBE VVV

E

EEEE R

VVI

CEEC

CCC

VVV

RIV

Page 29: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

OTHER BIAS METHODSOTHER BIAS METHODS

BASE BIASEMITTER BIAS

COLLECTOR-FEEDBACK BIAS

Page 30: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Other bias methods - Base BiasOther bias methods - Base Bias

• KVL apply on base circuit.

VCC – VRB – VBE = 0 or VCC – IBRB – VBE =0

• Solving for IB,

• Then, apply KVL around collector

circuit. VCC – ICRC – VCE = 0

• We know that IC = βDCIB,

B

BECCB R

VVI

B

BECCDCC R

VVI

Page 31: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Base biasBase bias

• From the equation of IC, note that IC is dependent on DC. When DC vary, VCE also vary, thus changing Q-point of transistor.

• This type of circuit is beta-dependent and very unstable. Recall that DC changes with temperature and collector current. Base biasing circuits are mainly limited to switching applications.

Page 32: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Emitter BiasEmitter Bias

Npn transistor with emitter bias

Page 33: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Emitter baseEmitter base

• This type of circuit is independent of DC making it as stable as the voltage-divider type. The drawback is that it requires two power supplies.

• Apply KVL and Ohm’s Law,IBRB + IERE + VBE = -VEE

• Since IC≈IE and IC= DC IB,

• Solve for IE or IC,

• Voltage equations for emitter base circuit.VE = VEE + IERE

VB = VE + VBE

VC = VCC – ICRC

DCBE

BEEEC RR

VVI

/

DC

EB

II

Page 34: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Collector-Feedback BiasCollector-Feedback Bias

Collector-feedback bias is kept stable with negative feedback, although it is not as stable as voltage-divider or emitter. With increases of IC, VC decrease and causing decrease in voltage across RB, thus IB also decrease. With less IB ,IC go down as well.

Page 35: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Analysis of collector-feedback circuitAnalysis of collector-feedback circuit

• By Ohm’s Law,

• Collector voltage with assumption IC>>IB.

VC = VCC – ICRC

• And IB = IC / DC

• So, collector current equation

• Since emitter is ground, VCE = VC.

VCE = VCC - ICRC

B

BECB R

VVI

DCBC

BECCC RR

VVI

/

Page 36: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

TROUBLESHOOTINGTROUBLESHOOTING

Page 37: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

TroubleshootingTroubleshootingFigure below show a typical voltage divider circuit with correct voltage readings. Knowing these voltages is a requirement before logical troubleshooting can be applied. We will discuss some of the faults and symptoms.

Page 38: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

All indicated faultsAll indicated faults

Page 39: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

TroubleshootingTroubleshooting

Fault 1: R1 Open

With no bias the transistor is in cutoff.

Base voltage goes down to 0 V.

Collector voltage goes up to10 V(VCC).

Emitter voltage goes down to 0 V.

Fault 2: Resistor RE Open

Transistor is in cutoff.

Base reading voltage will stay approximately the same.

Since IC=0, collector voltage goes up to 10 V(VCC).

Emitter voltage will be approximately the base voltage - 0.7 V.

Page 40: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

TroubleshootingTroubleshooting

Fault 3: Base lead internally open

Transistor is nonconducting (cutoff), IC=0A .

Base voltage stays approximately the same, 3.2V.

Collector voltage goes up to 10 V(VCC).

Emitter voltage goes down to 0 V because no emitter current through RE.

Fault 4: BE junction open

Transistor is in cutoff.

Base voltage stays approximately the same,3.2V.

Collector voltage goes up to 10 V(VCC)

Emitter voltage goes down to 0 V since no emitter current through RE.

Page 41: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

TroubleshootingTroubleshooting

Fault 5: BC junction open

Base voltage goes down to 1.11 V because of more base current flow through emitter.

Collector voltage goes up to 10 V(VCC).

Emitter voltage will drop to 0.41 V because of small current flow from forward-biased base-emitter junction.

Page 42: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

TroubleshootingTroubleshooting

Fault 6: RC open

Base voltage goes down to 1.11 V because of more current flow through the emitter.

Collector voltage will drop to 0.41 V because of current flow from forward-biased collector-base junction.

Emitter voltage will drop to 0.41 V because of small current flow from forward-biased base-emitter junction.

Page 43: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

TroubleshootingTroubleshooting

Fault 7: R2 open

Transistor pushed close to or into saturation.

Base voltage goes up slightly to 3.83V because of increased bias.

Emitter voltage goes up to 3.13V because of increased current.

Collector voltage goes down because of increased conduction of transistor.

Page 44: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

SUMMARYSUMMARY

Page 45: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

SummarySummary

The purpose of biasing is to establish a stable operating point (Q-point). The Q-point is the best point for operation of a transistor for a given collector current. The dc load line helps to establish the Q-point for a given collector current.

The linear region of a transistor is the region of operation within saturation and cutoff.

Page 46: Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,

Summaryummary

Voltage-divider bias is most widely used because it is stable and uses only one voltage supply.

Base bias is very unstable because it is dependent. Emitter bias is stable but require two voltage supplies. Collector-back is relatively stable when compared to base bias, but not as stable as voltage-divider bias.