Microsoft PowerPoint - Ch9_Etching.ppt
4

t Etching Rate =
PE-TEOS PSG 6000 Å/min, 30 Å/min, PSG
60006000 ----------------------------------
6



10

: 80% 5% 5% 10 %

H2O2 TiO2

12

7
13
Etching Rate for KOH etching of Si: (100):(110):(111)=100:16:1
8
15

Time
4F + SiO2 → SiF4 +2O
14
27

CN, N or O P, O, and F O, Al and F O, Al and F
Etched Layers
Reductions of the ions and neutrals to the feature bottom
30
Challenges – Etching Profiles Non-Ideality
Trenching Trenching Bowing Notching
F. F. Chen and J. P. Chang, “Principles of Plasma Processing: A Lecture Course”
16
31
100µm
32