奈米機電統合式服務平台User 1. NDL是否提供公版90nm光罩? 2. 請問90nm光罩設計需要注意什麼? (Test key, Mark…etc.) 1. NDL並無提供公版MEMS 光罩，需由委託者自行設

奈米機電統合式服務平台

CONFIDENTIAL 1

2014/06/04

DisclaimerNDL SHALL NOT BE LIABLE FOR TECHNICAL OR EDITORIAL

ERRORS OR OMISSIONS CONTAINED HEREIN; NOR FORINCIDENTAL OR CONSEQUENTIAL DAMAGES RESULTING FROMTHE FURNISHING, PERFORMANCE, OR USE OF THIS MATERIAL.THE INFORMATION IN THIS MANUAL IS SUBJECT TO CHANGEWITHOUT ANY PRIOR NOTICE FOR THE PURPOSES OF IMPROVINGTHE PERFORMANCE AND FUNCTIONALITY OF ITS PRODUCTS.

No one is allowed to copy or distribute the whole or a part of this document without prior written permission of NDL.

NDL here means National Nano device Laboratories.

CONFIDENTIAL 2

Purpose

• This document is intended to help users who want toapply NDL 6” MEMS baseline process to do fabrication.

• Please be notified that users should follow the processguideline in this document to do fabrication without anyviolation.

Contact information : [email protected] (林昌賢工程師)

CONFIDENTIAL 3

CONTENTS

CONFIDENTIAL 4

Disclaimer ..………………………………………………………………... 02Purpose …..…………………………………………………………………. 03Process Flow Chart …………………………………………….......... 05

Metal Micromachining Process Flow ………………….... 06SOI Micromachining Process Flow ……………….......... 10

Mask layout and design rules ….……………………………….... 14Platform performance ………………………………................... 15

Metal Micromachining …………………......................... 15SOI Micromachining ………………................................ 23

製程服務申請相關事項 ………….…………......................... 28Equipment layout ……………………………….......................... 35

Metal Micromachining Process

(1) 4x Metal Patterning(2) Deep Dielectric Anisotropic Etching(3) Bulk Silicon Isotropic Etching

Surface Micromachining

SOI Micromachining Process

(1) Bulk Silicon anisotropic Etching(2) HF Isotropic Etching

Bulk Micromachining

Si Dielectric Metal Si SiO2

(1)(2)(3)

(1)(2)

NDL‐MEMS platform

CONFIDENTIAL 5

Si Substrate

ILD 沈積與Contact 曝光(ILD deposition and Lithography )

Contact 蝕刻(Contact etching)

第一層金屬層沈積與曝光(Metal 1 deposition and Lithography)

第一層金屬層圖形蝕刻(Metal 1 etching)

IMD1 沈積與CMP研磨(IMD1 deposition and CMP)

完成四層導線結構之MEMS結構堆疊(4-Metal layers structure)

氧化層蝕刻(SiO2 etching)

結構釋放(Structure Release)

Repeat 2nd to 4th Layers

下run前請先與工程師討論.

MetalOxideSi substrateRelease space

Process Flow Chart

CONFIDENTIAL 6

Metal Micromachining

ILD Oxide deposition

Contact 1 Lithography

Contact 1 etching

Metal 1 deposition

Metal 4 Pattern etching

Passivation deposition

Post Fabrication Process

Oxide deep etching and structure release

Passivation Lithography

• 總共約 100 道製程, 製程時間約 3 個月

Metal 1 Pattern Lithography

Metal 1 Pattern etching

IMD1 Oxide deposition

Oxide CMP

Repeat Process Metal 2 ~ 4 layer

CONFIDENTIAL 7

Process Flow ChartMetal Micromachining

CONFIDENTIAL 8

MEMS device–光罩流程

GDS NO. Name Dark Clear Describe

1 Contact ● Contact

2 Metal‐1 ● Metal 1 layer

3 Via12 ● Via 1


5 Via23 ● Via 2


7 Via34 ● Via 3


9 Passivation ● Passivation


CONFIDENTIAL 9

MEMS device– Baseline

Process Step Spec

Passivation Passivation (SiNx/SiOx) 10k/4k

Metal 4M4 dep (TiN/Al/TiN) 250A/8k/1k

IMD3, PECVD TEOS 8k

Metal 3M3 dep (TiN/Al/TiN) 1k/4k/1k

IMD2, PECVD TEOS 8k

Metal 2M2 dep. (TiN/Al/TiN) 1k/4k/1k

IMD1, PECVD TEOS 8k

Metal 1M1 dep. (TiN/Al/TiN/Ti) 1k/4k/1k/250A

ILD , PECVD TEOS 10k


Si Substrate

SOI wafer Hard mask沈積與黃光製程(Hard mask deposition and Lithography )

ICP Si 蝕刻(ICP Si etching)

Si

SiO2 濕蝕刻(SiO2 wet etching)

Hard mask 蝕刻(Hard mask etching)

Hard mask (SiO2)OxideSi Release space

CONFIDENTIAL 10

SOI Micromachining

下run前請先與工程師討論.

Process Flow Chart

Hard mask (Oxide) deposition

Hard mask Lithography

Hard mask etching

ICP Si etching

• 總共約 8 道製程, 製程時間約 15 個工作天

SiO2 and hard mask remove

CONFIDENTIAL 11

Process Flow ChartSOI Micromachining

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MEMS device–光罩流程

GDS NO. Name Dark Clear Describe

1 SOI Pattern ● For Etching Mask

SOI Micromachining

Si Substrate

Si

Etching Mask

Si Thickness：

(1) Via size >4um x 4um(2) Trench size (Sensing Gap) > 3um(3) Spring size >2um

(1) Via size (2) Trench size

(3) Spring size

CONFIDENTIAL 14

Mask layout and design rules

4X Metal Patterning Deep Dielectric Anisotropic Etching

Bulk Silicon Isotropic Etching

CONFIDENTIAL 15


Platform performance

Oxide ~1um

Oxide ~0.8um

Oxide ~0.8um

Oxide ~0.8umAl Layer ~6000A

Al Layer ~6000A

Al Layer ~6250A

Al Layer ~9250A

CONFIDENTIAL 16

Platform performance• 4 Metal Layers Patterning


文字文字

製程規格製程規格

文字文字

備註備註Process Step Spec

Passivation

Passivation (SiNx/SiOx,) 10k/4k

M4M4 dep (TiN/Al/TiN,) 250A/8k/1k

IMD3, PECVD TEOS 8k

M3M3 dep (TiN/Al/TiN,) 1k/4k/1k

IMD2, PECVD TEOS 8k

M2M2 dep. (TiN/Al/TiN,) 1k/4k/1k

IMD1, PECVD TEOS 8k

M1M1 dep. (TiN/Al/TiN/Ti,) 1k/4k/1k/250A


Process Equipment:

• PE-CVD

• Metal PVD

• TCP Etcher

• ICP Si Etcher

• CMP

• Wet Bench

• I-Line & Track

• SEM & In-line SEM

(ADI & AEI)Thickness tolerance ≤ 10%

CONFIDENTIAL 17

Platform performance• 4 Metal Layers Patterning


5um

Al Hard Mask

CONFIDENTIAL 18

Platform performance• Deep Dielectric Anisotropic Etching


製程規格製程規格備註備註Process Structure Spec

Hard Mask 5KA Al/1KA Si3N4/ 9K Al

10k/4k

Oxide PE Oxide 5~6um 250A/8k/1k10k

4‐Metal Layers Structure Spec

M4M4 dep (TiN/Al/TiN,) 250A/8k/1k

IMD3, PECVD TEOS 8k

M3M3 dep (TiN/Al/TiN,) 1k/4k/1k

IMD2, PECVD TEOS 8k

M2M2 dep. (TiN/Al/TiN,) 1k/4k/1k

IMD1, PECVD TEOS 8k

M1M1 dep. (TiN/Al/TiN/Ti,) 1k/4k/1k/250A


Process Capabilities:

•Via Size >4um x 4um

• Trench Size (Sensing Gap) > 3um

• Al HM ≥1um

• Etch Deep 85o

• Open Area 10 (Ox/Al)

CONFIDENTIAL 19

Platform performance• Deep Dielectric Anisotropic Etching


• Bulk Si Isotropic Etch

CONFIDENTIAL 20

Platform performanceMetal Micromachining

30um

Sidewall Underetch (~30um)

CONFIDENTIAL 21

Platform performance• Bulk Si Isotropic Etch


製程規格製程規格備註備註

CONFIDENTIAL 22

Process Structure Spec

TopLayer

Oxide MEMS Structure 5~6um4‐Metal Layers MEMS

Structure

BottomLayer

Si substrate4um x 4um

•Trench Size(Sensing Gap) >3um

• Hard Mask = MEMS Structure

• Sidewall Etch 5um/min

• Undercut Sidewall

CONFIDENTIAL 23

SOI Micromachining

Bulk Silicon anisotropic Etching

HF Isotropic Etching


20um Depth SOI Structure Etching Performance

CONFIDENTIAL 24

SOI Micromachining

• Bulk Silicon anisotropic Etching



Process Structure Spec.

MaskPhoto Resist 0.8um

HM : Oxide ; Nitride ; Al 2~5 kA

StructureLayer

Si Substrate(No Stop Layer) 4um x 4um

• Trench Size (Sensing Gap) > 3um

• HM = Oxide

• Etch Deep 30 (Si/PR)

CONFIDENTIAL 25

SOI Micromachining

• Bulk Silicon anisotropic Etching


2um Oxide Layer Etching

CONFIDENTIAL 26

SOI Micromachining

• HF Isotropic Etching



Process Structure Spec.

StructureLayer

Oxide on Si Substrate2 um

SOI Substrate

Equipment : Wet Bench

Process Release Process

Reactant BOE 7:1

Temp. Room Temp. 30 0C

Process Capabilities:

• Oxide Etch Rate > 1000A / min

• HF : NH4F = 7 : 1

CONFIDENTIAL 27

SOI Micromachining

• HF Isotropic Etching


MES線上申請MES線上申請

對外服務處

(簡秀芳,7610)

對外服務處

(簡秀芳,7610)

1.資料註冊 2.結案

3.通知取貨

1.資料註冊 2.結案

3.通知取貨

製程服務組(林昌賢,7538)製程服務組(林昌賢,7538)

1.接單 2.審核3.下線 4.完工1.接單 2.審核3.下線 4.完工

光罩製作

(洪鶯玲,7746)

光罩製作

(洪鶯玲,7746)

1.接單 2.審核

3.製作 4.交件

1.接單 2.審核

3.製作 4.交件

CONFIDENTIAL 28

NDL MEMS device ‐連續製程委託送件流程

•Mask manufacture•Lithography

•PR Trimming•Etch

•Customer management•Job arrangement•Manufacture

•ADI•ATI•AEI

委託者製程服務組

微影光罩組

蝕刻薄膜組

CONFIDENTIAL 29

NDL MEMS device ‐相關事務

CONFIDENTIAL 30

Coordinator Assistant(Co-work)

Question Answer

委託接單製程整合工程師(林昌賢)

User,製程整合工程師(林昌賢)

1. 如何送件?

2. 如何聯絡?

1. 請上NDL網頁註冊帳號，並使用MES系統申請連續製程委託代工服務，請特別標註MEMS製程委託。

2. 對於MEMS連續製程委託代工服務有任何疑問，請與工程師林昌賢先生(分機7538)聯絡，或E‐mail : [email protected]信箱聯絡。

MASK 光罩工程師(洪鶯玲)

User 1. NDL是否提供公版90nm光罩?

2. 請問90nm光罩設計需要注意什麼? (Test key, Mark…etc.)

1. NDL並無提供公版MEMS光罩，需由委託者自行設計申請。

2. Mask design rule 由微影組同仁提供。

NDL MEMS device ‐Q&A

Coordinator Assistant(Co-work)

Question Answer

Lithography 黃光技術員 User,黃光工程師(許進財)

1. 每次黃光製程後欲確認線寬是否正確?

1. 黃光製程後可請技術員幫忙操作In‐line SEM確認，但委託者需提供相關圖形位置便於找尋，或可提前與技術員預約時段，一同觀測。

Thin film 薄膜技術員 User,薄膜工程師(周科吟)

1. 如何確認沈積厚度是否正確?

1. 薄膜設備會定時進行SPC測試，確保製程厚度，委託者亦可附上控片，用於量測該道製程之厚度。

Etching 蝕刻技術員 User,蝕刻工程師(許倬倫)

1. 請問如何確認蝕刻結果?

1. 除了以不同薄膜顏色來區分外，亦可使用 P‐10 或 N&K來量測蝕刻結果。

CMP CMP工程師 User,CMP工程師(段佑宗)

1. 請問要如何確認研磨速率?

1. 因研磨率每次都會不太一樣，故均需附上控片先測試研磨率，以確認研磨厚度一致。

ADI,AEI User User,黃光技術員蝕刻技術員製程工程師

1. 委託者如欲自行操作In‐line SEM，可依規定考核，通過後即可自行使用。

2. 如有相關之製程問題，可隨時詢問相關人員。

CONFIDENTIAL 31

NDL MEMS device ‐Q&A

Metal Micromachining Process


Oxide deposition (PECVD)Metal deposition (PVD)

LithographyEtching (Etcher)平坦化 (CMP)

Wet Etch (Wet Bench)Deep Oxide Etching (TCP Etcher)

Si Release (ICP Etcher)

ADI, AEI

AEI

CONFIDENTIAL 32

NDL MEMS device ‐委託送件流程Metal Micromachining

SOI Micromachining Process


Oxide deposition (Furnace)Lithography

Mask Etching (Etcher)

Deep Si Etching (ICP Etcher)

ADI, AEI

AEI

CONFIDENTIAL 33

NDL MEMS device ‐委託送件流程SOI Micromachining

1. 所有MEMS 製程委託送件皆須符合NDL一般送件流程與應遵守之相關規定，委託者須充分了解並同意後，始得送件；如有任何問題，請於申請委託前與各相關負責人連絡。

2. 委託者可於 NDL MES系統上自行查看委託件之進度，並依照技術員指定之時間，配合 ADI、ATI、AEI等檢測，如有任何問題，可與技術員或工程師連絡。

3. 使用者自行提供 SOI晶片(下線前請與工程師討論晶片容許規格)。

4. MEMS光罩，需由委託者自行設計申請。

5. SOI 元件之結構釋放 (BOE etching)，請由使用者自行操作。

NDL MEMS device ‐注意事項

CONFIDENTIAL 34

NDL fab Equipment Layout

CONFIDENTIAL 35

Documents

奈米機電統合式服務平台User 1. NDL是否提供公版90nm光 罩? 2. 請問90nm光罩設計需要 注意什麼? (Test key, Mark…etc.) 1. NDL並無提供公版MEMS 光罩，需由委託者自行設

奈米機電統合式服務平台User 1. NDL是否提供公版90nm光罩? 2. 請問90nm光罩設計需要注意什麼? (Test key, Mark…etc.) 1. NDL並無提供公版MEMS 光罩，需由委託者自行設