CALL FOR PAPERS - SPIEspie.org/Documents/ConferencesExhibitions/PUV17-call-lr.pdfAwards Presented at Photomask 2016 BACUS Lifetime Achievement Award 2016 was presented to Dr. Naoya

TEL: +1 360 676 3290 · [email protected] · #photomask 1

PHOTOMASK TECHNOLOGY+ EXTREME ULTRAVIOLET LITHOGRAPHY

CONNECTING MINDS. ADVANCING LIGHT.

Submit Abstracts by 24 April 2017 www.spie.org/puv17call

Monterey Conference Center and Monterey Marriott Monterey, California, USA

Conferences 11-14 September 2017

Exhibition12-13 September 2017

CALL FOR PAPERS

NEW - CO-LOCATED CONFERENCES

SPIE Photomask Technology + Extreme Ultraviolet Lithography 2017 · www.spie.org/puv17call2

PRESENT YOUR WORK IN MONTEREYSPIE PHOTOMASK TECHNOLOGY + EXTREME ULTRAVIOLET LITHOGRAPHY, A TECHNICAL MEETING FOR MASK MAKERS, EUVL, EMERGING TECHNOLOGIES, AND THE FUTURE OF MASK BUSINESS.

TECHNOLOGIES• Photomasks

• Patterning

• Metrology

• Inspection/repair

• Mask business

• EUV Lithography

• Emerging technologies

Conferences: 11-14 September 2017 Exhibition: 12-13 September 2017

Monterey Conference Center and Monterey Marriott Monterey, California, USA

www.spie.org/puv17call

Submit Abstracts by 24 APRIL 2017


New in 2017, SPIE Photomask Technology and the International Conference on Extreme Ultraviolet Lithography are now co-located.

SPIE PHOTOMASK TECHNOLOGYThe 37th Photomask Symposium, organized by SPIE and BACUS, the International Photomask Group of SPIE, provides the format to present advances in technology and their impact on the semiconductor lithography industry.

As the Symposium Chairs, we urge you to participate by submitting your abstract(s), and to encourage your colleagues to do the same. Also encourage your company to continue their support for the Photomask Technology Symposium.

We are returning to Monterey in 2017, and we hope to see you there.

Plan to Participate.

2017 BACUS Steering CommitteeFrank E. Abboud, Intel Corp.Paul W. Ackmann, GLOBALFOUNDRIES Inc.Michael D. Archuletta, RAVE LLC Artur Balasinski, Cypress Semiconductor Corp.

Uwe F. W. Behringer, UBC MicroelectronicsPeter D. Buck, Mentor Graphics Corp.Brian Cha, Samsung Electronics Co., Ltd.Jerry Cullins, HOYA Corp. USADerren Dunn, IBM Corp.Thomas B. Faure, GLOBALFOUNDRIES Inc.Emily Gallagher, IMEC Brian J. Grenon, Grenon Consulting

Peter D. BuckMentor Graphics Corp.2017 Photomask Conference Chair

INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHYThe 2017 EUVL Symposium, organized by SPIE, EUREKA, imec, and EIDEC, provides a forum to discuss and assess the worldwide status of EUVL technology and infrastructure readiness, as well as opportunities for future extension of the technology.

New, original and un-published material generally addressing the challenges listed on page 5 are sought for this conference.

Paolo A. Gargini, Stanford Univ. (United States)

Emily E. GallagherIMEC2017 Photomask Conference Co-Chair

Kurt G. Ronse, IMEC (Belgium)

Jon Haines, Micron Technology Inc. Naoya Hayashi, Dai Nippon Printing Co., Ltd. Bryan S. Kasprowicz, Photronics, Inc.Patrick M. Martin, Applied Materials, Inc. Shane Palmer, Nikon Research Corp. of AmericaJan Hendrik Peters, Carl Zeiss SMT GmbHMoshe Preil, KLA-Tencor Corp. Douglas J. Resnick, Canon Nanotechnologies, Inc.Thomas Struck, Infineon Technologies AGBala Thumma, Synopsys, Inc.Michael Watt, Shin-Etsu MicroSi Inc.Jim N. Wiley, ASML US, Inc.Larry S. Zurbrick, Keysight Technologies, Inc.

Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)

Toshiro Itani, EUVL Infrastructure Development Ctr., Inc. (Japan)


Photomask Technology (PM17)Conference Chairs: Peter D. Buck, Mentor Graphics Corp. (United States); Emily E. Gallagher, IMEC (Belgium)Program Committee: Frank E. Abboud, Intel Corp. (United States); Paul W. Ackmann, GLOBALFOUNDRIES Inc. (United States); Lucien Bouchard, Photronics Inc. (United States); Byungcheol Cha, SAMSUNG Electronics Co., Ltd. (Korea, Republic of); Uwe Dietze, SUSS MicroTec Inc. (United States); Thomas B. Faure, GLOBALFOUNDRIES Inc. (United States); Aki Fujimura, D2S, Inc. (United States); Brian J. Grenon, RAVE LLC (United States); Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan); Bryan S. Kasprowicz, Photronics, Inc. (United States); Byung-Gook Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of); Paul F. Morgan, Micron Technology, Inc. (United States); Moshe E. Preil, KLA-Tencor Corp. (United States); Thomas Scheruebl, Carl Zeiss SMT GmbH (Germany); Banqiu Wu, Applied Materials, Inc. (United States)

The 37th Photomask Technology Conference, organized by SPIE and BACUS (the International Photomask Technical Group of SPIE), provides a seminal international forum to present photomask technology advances and their impact on semiconductor lithography. In many ways, masks represent the confluence of the ab-stractness of designer intent and the physical reality of wafer lithography. Photomasks enable DUV and EUV lithography, while the closely-related master templates enable nanoimprint lithography (NIL). Consequently, SPIE Photomask has become the key venue to present technology advances on mask process, but also on OPC, data preparation, metrology, mask imaging, and mask business. The mask is a good vantage point for viewing lithography. In 2016, Chris Progler (Photronics) talked about the cost of complexity. Scaling will continue, but the added cost of complexity is also of interest to most decision-makers and adds another dimension to possible contributions for the 2017 conference.

We are excited to announce that for 2017, Photomask will be collocated with the EUVL. The combined event will include four days of technical presentations and events.

Suggested topics for Photomask submissions include, but are not limited to:Computational Lithography• Optical Proximity Correction (OPC) • Source/mask optimization (SMO) • Mask imaging / mask 3D effects • Simulation and modeling-design for

manufacturability.

Mask Technology• Mask data preparation (MDP) • Mask process correction (MPC) • Advanced data preparation techniques • Novel jobdeck requirements for new write

formats • Substrates and materials • Patterning tools and processes • Resist and resist processing and etch • Metrology, inspection, repair • Cleaning, contamination, and haze • EUV mask technologies • Equipment infrastructure • Blank and resist • Actinic and non-actinic characterization

strategies • Pellicles • Multi-patterning, optical and EUV hybrid.

Imaging and Emerging Mask Technologies• Nano imprint mask making and applications • Multi-beam mask writers • Alternative mask technologies • High NA-anamorphic impacts on mask- Grey-

scale masks • Direct-write, maskless lithography • Inverse lithography and pixelated mask

technology.

Mask Application• Patterned media • Flat panel display • MEMS patterning • Silicon photonics.

Mask Business• Mask manufacturing management • Mask management in wafer fabs • Business aspects of masks • Infrastructure challenges.

Special Sessions• Student only competing for Photronics Award

and ZEISS Award. • Panel Discussion. • Masks for alternate lithography applications.

2017 Photomask Best Student Paper Award

For information see page 6.


Important Dates Abstract Due Date: 24 April 2017Author Notification: 5 June 2017Manuscript Due Date: 14 August 2017Please Note: Submissions imply the intention of at least one author to pay registration, attend the meeting, make their presentation as scheduled, whether it is poster or oral, and submit a 6-page minimum manuscript for publication in the confer-ence proceedings. Proceedings will be available on the SPIE Digital Library.

International Conference on Extreme Ultraviolet Lithography 2017 (EUV17)Conference Chairs: Paolo A. Gargini, Stanford Univ. (United States); Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States); Kurt G. Ronse, IMEC (Belgium); Toshiro Itani, EUVL Infrastructure Development Ctr., Inc. (Japan)Program Committee: Eric M. Panning, Intel Corp. (United States); Winfried Kaiser, Carl Zeiss SMT GmbH (Germany); Satoshi Tanaka, EUVL Infrastructure Development Ctr., Inc. (Japan)

The 2017 EUVL Conference, organized by SPIE, EUREKA, imec, and EIDEC, provides a forum to discuss and assess the worldwide status of EUVL technology and infrastructure readiness, as well as opportunities for future extension of the technology. We are also excited to announce that for 2017, the EUVL Conference will be collocated with Photomask Technologies, the seminal international forum to present photomask technology. New, original and un-published material generally addressing the challenges detailed below is sought for this symposium.

Despite two generations of EUVL tools is in the field, strong progress in EUV sources, and chip manufac-turers announcing plans for EUVL production, many challenges still remain in meeting HVM productivity and yield targets for the 7 nm technology node.

In particular:• Meeting productivity and availability targets for

HVM, especially for the EUV source • Simultaneously meeting resist targets

for resolution, variability/stochastics, and sensitivity

• Mature pellicle technology • Mask defectivity and lifetime • Patterned mask inspection.

Extension of EUVL to the 5 nm technology node and beyond will further require new innovations and breakthroughs in a variety of areas including:• Greater than 500W light sources including

XFEL • Novel mask materials, both absorber and

multilayers, addressing 3D and high NA effects • Novel patterning and processing materials

addressing stochastics and variability • Resolution extension (High NA, multiple

patterning, beyond EUV, …).

Abstracts are being solicited for all topics related to the HVM introduction and extendibility of EUVL.

General topic categories of interest include:• EUV integration in manufacturing (EI) • EUV tools, including sources and optics(ET) • EUV masks, mask inspection/repair and review

(MA) • EUV pellicles, mask cleaning and thermal

expansion (PE) • EUV resist materials/process and contamination

(RE) • EUV patterning and process enhancement (EP) • EUV lithography extendibility (EE).

Awards Presented at Photomask 2016

BACUS Lifetime Achievement Award 2016was presented to

Dr. Naoya Hayashi, Research Fellow, Dai Nippon Printing Co., Ltd. (Japan) In recognition for outstanding contributions over several decades in the area of photomask technology. Dr. Hayashi has also provided leadership and guidance in developing cooperation between Photomask Japan, Photomask, and the Bay Area Chromium Users Society (BACUS). This cooperation has created the most successful avenue for communication of technical advancements in photomask technology.

Photomask/BACUS 2016 Best Paper Awards1ST PLACEWorld’s 1st high-throughput multi-beam mask writer, Christof Klein, Elmar Platzgummer, IMS Nanofabrication AG (Austria) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [9985-4]

2ND PLACEThe costs of masks: hiding or revealing the real solution, Michael J. Lercel, ASML Fishkill (United States); Bryan S. Kasprowicz, Photronics, Inc. (United States) . . . [9985-27]

3RD PLACEIdentification of a new source or reticle contamination, Brian J. Grenon, David Brinkley, RAVE, LLC (United States) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [9985-39]

In order to be considered for these awards:• Presenter must make their presentation as

scheduled, oral only• Manuscript must be submitted to SPIE no later

than the week of 14 August 2017.

STUDENTS: In addition to the above requirements, to be considered for the Best Student Paper Award:• Student must be the presenting author at the

conference• Student must be the leading author of the

manuscript• Student must send a message to the conference

chairs identifying themselves as a student.

This should be done after you have submitted your abstract, and must include your Tracking Number and paper title. You must also include a 2-page extended abstract with your message.

Please send to:Bryan S. Kasprowicz at [email protected] D. Buck at [email protected] E. Gallagher at [email protected]

A team of experts headed by the Photomask conference chairs will evaluate all the papers, both for quality and content. Attention will be given to 1) the innovation, clarity, and style of both the oral presentation at the conference and the manuscript submitted for publication, and 2) the importance of the work to the field.

The finalists will be notified by email before the symposium to present in an oral Special Student Session. If selected as a Finalist, students must confirm their attendance by 1 May to the Chairs in order to be in consideration.

Announcing the 2017 Photomask Best Student Paper AwardFor the second year, Photronics Inc. has generously offered to sponsor a Best Student Paper Award at the SPIE Photomask Technology symposium in Monterey, California, 11-14 September 2017. There will be 4 finalists with each receiving a monetary award. The winner will be chosen from the finalists and be awarded during the Banquet on September 13th.

Photomask/BACUS 2016 Best Poster Awards1ST PLACE7nm e-beam resist sensitivity characterization, Amy E. Zweber, GLOBALFOUNDRIES Inc. (United States); Yusuke Toda, Toppan Photomasks, Inc. (United States); Yoshifumi Sakamoto, Toppan Printing Co., Ltd. (Japan); Thomas B. Faure, Jed H. Rankin, Steven C. Nash, GLOBALFOUNDRIES Inc. (United States); Masayuki Kagawa, Toppan Photomasks, Inc. (United States); Michael Fahrenkopf, GLOBALFOUNDRIES Inc. (United States); Takeshi Isogawa, Toppan Photomasks, Inc. (United States); Richard E. Wistrom, GLOBALFOUNDRIES Inc. (United States) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [9985-86]

2ND PLACEMechanical stress induced by external forces in the extreme-ultraviolet pellicle, Hyun-Ju Lee, Hye-Keun Oh, Eun-Sang Park, In-Seon Kim, Hanyang Univ. (Korea, Republic of) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [9985-55]

3RD PLACEInvestigation of fabrication process for sub-20nm dense pattern of non-chemically amplified electron-beam resist based on acrylic polymers, Shunsuke Ochiai, Tomohiro Takayama, Yukiko Kishimura, Hironori Asada, Yamaguchi Univ. (Japan); Manae Sonoda, Minako Iwakuma, National Institute of Technology, Miyakonojo College (Japan); Ryoichi Hoshino, Gluon Lab. LLC (Japan) . . . . . . . . . . . . {9985-56]

2ND Annual Photronics Best Student Paper Award1ST PLACEInfluence of non-uniform intensity distribution of locally deformed pellicle for N7 patterning, In-Seon Kim, Guk-Jin Kim, Hanyang Univ. (Korea, Republic of); Michael Yeung, Fastlitho Inc. (United States); Eytan Barouch, Boston Univ. (United States); Min-Su Kim, Jin-Goo Park, Hanyang Univ (Korea, Republic of); Hye-Keun Oh, Hanyang Univ. (Korea, Republic of) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .[9985-14]

Finalist Prizes were presented toDependence of dissolution behavior of main-chain scission type resists on molecular weight, Akihiro Konda, Hiroki Yamamoto, Takahiro Kozawa, Osaka Univ. (Japan); Shusuke Yoshitake, NuFlare Technology, Inc. (Japan) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [9985-15] Phase contrast pupil engineering for EUV actinic pattern inspection, Yow-Gwo Wang, Andy R. Neureuther, Univ. of California, Berkeley (United States), Lawrence Berkeley National Lab. (United States); Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .[9985-16]

Feature size dependence of mask topography induced phase effects measured with an aerial imaging tool, Aamod Shanker, Univ. of California, Berkeley (United States); Martin Sczyrba, Falk Lange, Advanced Mask Technology Ctr. GmbH Co. KG (Germany); Brid Connolly, Toppan Photomasks, Inc. (Germany); Andy R. Neureuther, Laura Waller, Univ. of California, Berkeley (United States). . . . . . . . . . . . . . . . [9985-17]

Awards Sponsored by

Zeiss Award for Talents in the Photomask IndustryPhase contrast pupil engineering for EUV actinic pattern inspection, Yow-Gwo Wang, Andy R. Neureuther, Univ. of California, Berkeley (United States), Lawrence Berkeley National Lab. (United States); Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States) . . . . . . . . . . . . . . . . . . . . . . . .[9985-16] Award Sponsored by


Find full information online: www.spie.org/puv17callFull program, housing, travel, and registration information will be online in June 2017.

HotelSPIE will arrange discounted rates at the Monterey Marriott. Housing will open for reservations by June 2017.

ExhibitLearn more about exhibiting and sponsoring by visiting the “For Exhibitors” section of the website, or call SPIE Sales at +1 360 676 3290

ABSTRACT SUBMISSION

By submitting an abstract, I agree to the following conditions:

AN AUTHOR OR COAUTHOR (INCLUDING KEYNOTE, INVITED, ORAL, AND POSTER PRESENTERS) WILL:• Register at the reduced author registration rate

(current SPIE Members receive an additional discount on the registration fee).

• Attend the meeting.• Make the presentation as scheduled in the pro-

gram.• Submit a manuscript (6 pages minimum) for

publication in the SPIE Digital Library.• Obtain funding for registration fees, travel, and

accommodations, independent of SPIE, through their sponsoring organizations.

• Ensure that all clearances, including government and company clearance, have been obtained to present and publish. If you are a DoD contractor in the USA, allow at least 60 days for clearance.

Submit an abstract and summary online at : www.spie.org/puvcall • Abstracts should contain enough detail to clearly

convey the approach and the results of the re-search. Accepted abstracts will be published and made available at the meeting. Please submit a 500-word abstract for review.

• Please also submit a 100-word text summary suitable for early release. If accepted, this sum-mary text will be published prior to the meeting in the online or printed programs promoting the conference.

• To provide the research community with enhanced access to information presented at SPIE con-ferences. SPIE will record the audio plus screen content of oral presentations and, with author permission only, will publish the recordings on the SPIE Digital Library. When submitting an abstract, you will be asked to respond to the permission request.

• Only original material should be submitted.• Abstracts should contain enough detail to clearly

convey the approach and the results of the re-search.

• Commercial papers, papers with no new research/development content, and papers where support-ing data or a technical description cannot be given for proprietary reasons will not be accepted for presentation in this conference.

• Please do not submit the same, or similar, abstracts to multiple conferences.

REVIEW, NOTIFICATION, AND PROGRAM PLACEMENT INFORMATION• To ensure a high-quality conference, all submis-

sions will be assessed by the Conference Chair/Editor for technical merit and suitability of con-tent.

• Conference Chair/Editors reserve the right to reject for presentation any paper that does not meet content or presentation expectations.

• The contact author will receive notification of acceptance and presentation details by e-mail no later than: 5 June 2017 for Photomask and 19 June 2017 for EUVL.

• Final placement in an oral or poster session is subject to the Chairs’ discretion.

PROCEEDINGS OF SPIE AND SPIE DIGITAL LIBRARY INFORMATION• Manuscript instructions are available from the

“For Authors/Presenters” link on the con-ference website.

• Conference Chair/Editors may require manuscript revision before approving publication and reserve the right to reject for publication any paper that does not meet acceptable standards for a scientif-ic publication. Conference Chair/Editors’ decisions on whether to allow publication of a manuscript is final.

• Authors must be authorized to transfer copyright of the manuscript to SPIE, or provide a suitable publication license.

• Only papers presented at the conference and received according to publication guidelines and timelines will be published in the conference Proceedings of SPIE and SPIE Digital Library.

• Published papers are indexed in leading scientific databases including Astrophysical Data System (ADS), Chemical Abstracts (relevant content), Compendex, CrossRef, Current Contents, Deep-Dyve, Google Scholar, Inspec, Portico, Scopus, SPIN, and Web of Science Conference Proceed-ings Citation Index, and are searchable in the SPIE Digital Library. Full manuscripts are available to SPIE Digital Library subscribers worldwide.


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