BTD1857AM3.pdf

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CYStech Electronics Corp. Spec. No. : C855M3-RIssued Date : 2004.08.06 Revised Date : 2012.11.23Page No. : 1/6

BTD1857AM3 CYStek Product Specification

Silicon NPN Epitaxial Planar TransistorBV CEO 160V

IC 1.5AR CESAT(MAX) 0.3 BTD1857AM3

Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package

Symbol Outline

BTD1857AM3

B Base

C Collector

E Emitter

SOT-89

B C E

Absolute Maximum Ratings (Ta=25C)

Parameter Symbol Limits UnitCollector-Base Voltage V CBO 180 VCollector-Emitter Voltage V CEO 160 VEmitter-Base Voltage V EBO 5 VCollector Current (DC) I C 1.5 ACollector Current (Pulse) I CP 3 A

0.61 (Note 1) Power Dissipation P D 2 (Note 2)

W

Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 C Note : 1. When mounted on FR-4 PCB with area measuring 10101 mm

2 . When mounted on ceramic with area measuring 40401 mm

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Thermal Characteristics

Parameter Symbol Value Unit208

125 (Note 1) Thermal Resistance, Junction to Ambient R JA

62.5 (Note 2)

C/W

Thermal Resistance, Junction to Case R JC 39.3 C/W

Note : 1. When mounted on FR-4 PCB with area measuring 10101 mm2 . When mounted on ceramic with area measuring 40401 mm

Characteristics (Ta=25 C)

Symbol Min. Typ. Max. Unit Test ConditionsBV CBO 180 - - V I C=50 A, I E=0BV CEO 160 - - V I C=1mA, I B=0BV EBO 5 - - V I E=50 A, I C=0

ICBO - - 1 A V CB=160V, I E=0IEBO - - 1 A V EB=4V, I C=0

*V CE(sat) - - 0.3 V I C=1A, I B=100mA*R CE(sat) - - 0.3 IC=1A, I B=100mA*V BE(on) - - 1.5 V V CE=5V, I C=150mA

hFE1 180 - 390 - V CE=5V, I C=150mAhFE2 30 - - - V CE=5V, I C=500mAf T - 140 - MHz V CE=5V, I C=150mA

Cob - 27 - pF V CB=10V, I E=0, f=1MHz*Pulse Test: Pulse Width 380s, Duty Cycle 2%

Ordering InformationDevice Package Shipping Marking

BTD1857AM3 SOT-89(Pb-free lead plating and halogen-free package) 1000 pcs / Tape & Reel DQ

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Characteristic Curves

Current Gain vs Collector Current

10

100

1000

1 10 100 1000 10000Collector Current---IC(mA)

C u r r e n t

G a i n - - -

H F E

VCE=5V

Tj=25Tj=75

Tj=125

Saturation Voltage vs Collector Current

10

100

1000

10 100 1000 10000Collector Current---IC(mA)

S a t u r a

t i o n

V o l

t a g e - - - (

m V )

VCE(SAT)@IC=10IB

Tj=25Tj=75

Tj=125

Saturation Voltage vs Collector Current

100

1000

1 10 100 1000 10000

Collector Current---IC(mA)

S a t u r a

t i o n

V o l t a g e - - -

( m V )

VBE(SAT)@IC=10IB

Tj=25

Tj=75Tj=125

On Voltage vs Collector Current

100

1000

1 10 100 1000 10000

Collector Current---IC(mA)

O n

V o l

t a g e - - -

( m V )

VBE(ON)@VCE=5V

Tj=25

Tj=75Tj=125

Safe Operationg Area

0.01

0.1

1

10

1 10 100 1000

Forward Voltage---VCE(V)

F o r w a r

d C u r r e n t - - - I

C ( A )

PT=1s

PT=1ms

PT=100ms

Power Derating Curve

0

0.5

1

1.5

2

2.5

0 50 100 150 200

Case Temperature---TC()

P o w e r

D i s s i p a

t i o n - - -

P D ( W ) See Note 2 on page 1

See Note 1 on page 1

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Reel Dimension

Carrier Tape Dimension

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Recommended wave soldering conditionProduct Peak Temperature Soldering Time

Pb-free devices 260 +0/-5 C 5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate

(Tsmax to Tp) 3 C/second max. 3 C/second max.

PreheatTemperature Min(T S min)Temperature Max(T S max)Time(ts min to ts max )

100 C150 C

60-120 seconds

150 C200 C

60-180 secondsTime maintained above:

Temperature (T L) Time (t L)

183 C60-150 seconds

217 C60-150 seconds

Peak Temperature(T P ) 240 +0/-5 C 260 +0/-5 CTime within 5 C of actual peak

temperature(tp)10-30 seconds 20-40 seconds

Ramp down rate 6 C/second max. 6 C/second max.

Time 25 C to peak temperature 6 minutes max. 8 minutes max.Note : All temperatures refer to topside of the package, measured on the package body surface.

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SOT-89 Dimension

Marking:

*: Typical Inches Millimeters Inches MillimetersDIM

Min. Max. Min. Max.DIM

Min. Max. Min. Max. A 0.1732 0.1811 4.40 4.60 F 0.0583 0.0598 1.48 1.527B 0.1594 0.1673 4.05 4.25 G 0.1165 0.1197 2.96 3.04C 0.0591 0.0663 1.50 1.70 H 0.0551 0.0630 1.40 1.60D 0.0945 0.1024 2.40 2.60 I 0.0138 0.0161 0.35 0.41E 0.01417 0.0201 0.36 0.51

Notes: 1.Controlling dimension: millimeters.2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Impor tan t Not ice : All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek s emicondu c to r p roduc t s a re no t war ran ted to be su i t ab le fo r use in L i fe -Suppor t App l i ca t ions , o r sys tems . CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

month code: 1~9,

EF

G

C

B

A A,B,C

Year code :321 62006,Product

72007,CodeHFE rank H

I

D

Style: Pin 1. Base 2. Collector 3. Emitter

3-Lead SOT-89 PlasticSurface Mounted PackageCYStek Package Code: M3

Documents

BTD1857AM3.pdf