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8/14/2019 BTD1857AM3.pdf
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CYStech Electronics Corp. Spec. No. : C855M3-RIssued Date : 2004.08.06 Revised Date : 2012.11.23Page No. : 1/6
BTD1857AM3 CYStek Product Specification
Silicon NPN Epitaxial Planar TransistorBV CEO 160V
IC 1.5AR CESAT(MAX) 0.3 BTD1857AM3
Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package
Symbol Outline
BTD1857AM3
B Base
C Collector
E Emitter
SOT-89
B C E
Absolute Maximum Ratings (Ta=25C)
Parameter Symbol Limits UnitCollector-Base Voltage V CBO 180 VCollector-Emitter Voltage V CEO 160 VEmitter-Base Voltage V EBO 5 VCollector Current (DC) I C 1.5 ACollector Current (Pulse) I CP 3 A
0.61 (Note 1) Power Dissipation P D 2 (Note 2)
W
Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 C Note : 1. When mounted on FR-4 PCB with area measuring 10101 mm
2 . When mounted on ceramic with area measuring 40401 mm
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CYStech Electronics Corp. Spec. No. : C855M3-RIssued Date : 2004.08.06 Revised Date : 2012.11.23Page No. : 2/6
BTD1857AM3 CYStek Product Specification
Thermal Characteristics
Parameter Symbol Value Unit208
125 (Note 1) Thermal Resistance, Junction to Ambient R JA
62.5 (Note 2)
C/W
Thermal Resistance, Junction to Case R JC 39.3 C/W
Note : 1. When mounted on FR-4 PCB with area measuring 10101 mm2 . When mounted on ceramic with area measuring 40401 mm
Characteristics (Ta=25 C)
Symbol Min. Typ. Max. Unit Test ConditionsBV CBO 180 - - V I C=50 A, I E=0BV CEO 160 - - V I C=1mA, I B=0BV EBO 5 - - V I E=50 A, I C=0
ICBO - - 1 A V CB=160V, I E=0IEBO - - 1 A V EB=4V, I C=0
*V CE(sat) - - 0.3 V I C=1A, I B=100mA*R CE(sat) - - 0.3 IC=1A, I B=100mA*V BE(on) - - 1.5 V V CE=5V, I C=150mA
hFE1 180 - 390 - V CE=5V, I C=150mAhFE2 30 - - - V CE=5V, I C=500mAf T - 140 - MHz V CE=5V, I C=150mA
Cob - 27 - pF V CB=10V, I E=0, f=1MHz*Pulse Test: Pulse Width 380s, Duty Cycle 2%
Ordering InformationDevice Package Shipping Marking
BTD1857AM3 SOT-89(Pb-free lead plating and halogen-free package) 1000 pcs / Tape & Reel DQ
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CYStech Electronics Corp. Spec. No. : C855M3-RIssued Date : 2004.08.06 Revised Date : 2012.11.23Page No. : 3/6
BTD1857AM3 CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
1 10 100 1000 10000Collector Current---IC(mA)
C u r r e n t
G a i n - - -
H F E
VCE=5V
Tj=25Tj=75
Tj=125
Saturation Voltage vs Collector Current
10
100
1000
10 100 1000 10000Collector Current---IC(mA)
S a t u r a
t i o n
V o l
t a g e - - - (
m V )
VCE(SAT)@IC=10IB
Tj=25Tj=75
Tj=125
Saturation Voltage vs Collector Current
100
1000
1 10 100 1000 10000
Collector Current---IC(mA)
S a t u r a
t i o n
V o l t a g e - - -
( m V )
VBE(SAT)@IC=10IB
Tj=25
Tj=75Tj=125
On Voltage vs Collector Current
100
1000
1 10 100 1000 10000
Collector Current---IC(mA)
O n
V o l
t a g e - - -
( m V )
VBE(ON)@VCE=5V
Tj=25
Tj=75Tj=125
Safe Operationg Area
0.01
0.1
1
10
1 10 100 1000
Forward Voltage---VCE(V)
F o r w a r
d C u r r e n t - - - I
C ( A )
PT=1s
PT=1ms
PT=100ms
Power Derating Curve
0
0.5
1
1.5
2
2.5
0 50 100 150 200
Case Temperature---TC()
P o w e r
D i s s i p a
t i o n - - -
P D ( W ) See Note 2 on page 1
See Note 1 on page 1
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CYStech Electronics Corp. Spec. No. : C855M3-RIssued Date : 2004.08.06 Revised Date : 2012.11.23Page No. : 4/6
BTD1857AM3 CYStek Product Specification
Reel Dimension
Carrier Tape Dimension
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CYStech Electronics Corp. Spec. No. : C855M3-RIssued Date : 2004.08.06 Revised Date : 2012.11.23Page No. : 5/6
BTD1857AM3 CYStek Product Specification
Recommended wave soldering conditionProduct Peak Temperature Soldering Time
Pb-free devices 260 +0/-5 C 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate
(Tsmax to Tp) 3 C/second max. 3 C/second max.
PreheatTemperature Min(T S min)Temperature Max(T S max)Time(ts min to ts max )
100 C150 C
60-120 seconds
150 C200 C
60-180 secondsTime maintained above:
Temperature (T L) Time (t L)
183 C60-150 seconds
217 C60-150 seconds
Peak Temperature(T P ) 240 +0/-5 C 260 +0/-5 CTime within 5 C of actual peak
temperature(tp)10-30 seconds 20-40 seconds
Ramp down rate 6 C/second max. 6 C/second max.
Time 25 C to peak temperature 6 minutes max. 8 minutes max.Note : All temperatures refer to topside of the package, measured on the package body surface.
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CYStech Electronics Corp. Spec. No. : C855M3-RIssued Date : 2004.08.06 Revised Date : 2012.11.23Page No. : 6/6
BTD1857AM3 CYStek Product Specification
SOT-89 Dimension
Marking:
*: Typical Inches Millimeters Inches MillimetersDIM
Min. Max. Min. Max.DIM
Min. Max. Min. Max. A 0.1732 0.1811 4.40 4.60 F 0.0583 0.0598 1.48 1.527B 0.1594 0.1673 4.05 4.25 G 0.1165 0.1197 2.96 3.04C 0.0591 0.0663 1.50 1.70 H 0.0551 0.0630 1.40 1.60D 0.0945 0.1024 2.40 2.60 I 0.0138 0.0161 0.35 0.41E 0.01417 0.0201 0.36 0.51
Notes: 1.Controlling dimension: millimeters.2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Impor tan t Not ice : All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek s emicondu c to r p roduc t s a re no t war ran ted to be su i t ab le fo r use in L i fe -Suppor t App l i ca t ions , o r sys tems . CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
month code: 1~9,
EF
G
C
B
A A,B,C
Year code :321 62006,Product
72007,CodeHFE rank H
I
D
Style: Pin 1. Base 2. Collector 3. Emitter
3-Lead SOT-89 PlasticSurface Mounted PackageCYStek Package Code: M3