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boost analysis
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EE682 – Group Project Design
Prof. Ali KeyhaniBoost DC/DC Converter Design
Lecture #1 Power Switch Design
Boost Converter Review1. Circuit topology
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Power Switch Design
Boost Converter Review2. Continuous conducting mode (CCM)
Current slope: VL/LWhere VL is inductor voltage
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Power Switch Design
Boost Converter Review3. Discontinuous conducting mode (DCM)
Inductor current is notcontinuous
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Power Switch Design
Design Tasks
1. Power switch design
2. Inductor design
3. Capacitor design
4. Drive circuit
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Power Switch Design
Design Specifications
1. Input voltage: 24 V
2. Output voltage: 48 V
3. Output power: 240 W
4. Inductor current ripple: 15 %
5. Capacitor voltage ripple: 0.1 %
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Power Switch Design
Power Switch Design1. Power BJTs, Power MOSFETs, and IGBTs
1. BJTs – greater capacity, low ON state loss2. MOSFETs – fast switching, voltage driven3. IGBTs – combined modules, powerful and expensive
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Power Switch Design
Power Switch DesignIllustrate the design procedures with a design example:
Design requirement:
A 240-watt DC/DC boost converter with Vin=24V and Vout=48V.
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Power Switch Design
Power Switch Design1. Current and voltage rating requirements
Design: Peak transistor current equals to
Iin=P/Vin=240W/24V=10A
Voltage rating requirements
VTmax=Vout+VF(diode)=48+0.7V=48.7V
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Power Switch Design
Power Switch Design2. Device selection based on the requirements
Design: Candidate I: BJT 2N6547
IC=15A>10A and VCE=400V>48V
Candidate II: power MOSFET HUFA75307D3ID=15A>10A and VDS=55V>48V
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Power Switch Design
Power Switch DesignDatesheet 2N6547
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Power Switch Design
Power Switch DesignDatesheet HUFA75307D3
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Power Switch Design
Power Switch Design3. Base/Gate drive requirements2N6547: For IC=15A, must have IB>=3A, not desirable
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Power Switch Design
Power Switch Design3. Base/Gate drive requirements (cont’d)HUFA75307D3 is voltage driven:Threshold (mininum ON) gate-source voltage VGSth =4V Maximum gate-source voltage VGSmax=20V
Can be driven by TTL (+5V) or CMOS logic +15V digital circuits
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Power Switch Design
Power Switch Design4. Transient performances2N6547
Rise time: tr=1.0µs Fall time: tf=1.5µs
HUFA75307D3 Rise time: tr=40ns Fall time: tf=45ns
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Power Switch Design
Power Switch Design5. Selection
Power MOSFET HUFA75307D36. Switching loss
( ) ( )
( ) W768.01010060
102012
1048
21
9
3
___
=×+
××
×=
+=+==
−
OFFONdds
OFFlossONlossloss
lossSW ttTIVWW
TTWP
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Power Switch Design
Power Switch Design7. ON state loss
1. ON state time
2. ON state loss
( )
( ) W684.81073.25075.015
102011
1
62
3
1)(2_
_
=×××
×
=
==
−
trITT
WP ONDSD
lossONlossON
s 73.25sec 48
247.0481020
1131 µ=
−+
×=
−+=out
inFout
VVVV
ft
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Power Switch Design8. Overall loss
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9.452W __ =+= lossONlossSWloss PPP < PD = 45 W
(see the datasheet of HUFA75307D3)
Power Switch DesignCalculation of junction to sink temperature difference
JCJClossJC RtZPtT θθ )()( %)50(=∆
C175 TC2.31W452.9C/W3.3 jmax °=<=×=×=∆∴ oolossjsjs PRT θ
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Power Switch Design
Power Switch DesignHUFA75307D3 ON-resistance and turn-on and turn-off time
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Power Switch Design