BJT DC circuit analysis

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    BJT Transistor circuits analysis:

    There is an underlying similarity between the analysis of each configuration due to the recurring

    use of the following important basic relationships for a transistor:

    For the BJT to be biased in its linear or active operating region the following must be true:

    1. The baseemitter junction must be forward-biased (p-region voltage more positive), with a

    resulting forward-bias voltage of about 0.6 to 0.7 V.

    2. The basecollector junction mustbe reverse-biased (n-region morepositive), with the reverse-

    bias voltage being any value within the maximum limits of the device.

    [Note that for forward bias the voltage across the p-n junction is p-positive, while for reverse

    bias it is opposite (reverse) with n-positive. This emphasis on the initial letter should provide a

    means of helping memorize the necessary voltage polarity.]

    Operation in the cutoff, saturation, and linear regions of the BJT characteristic are provided as

    follows:

    1.Linear-region operation:

    Baseemitter junction forward biased

    Basecollector junction reverse biased

    2. Cutoff-region operation:

    Baseemitter junction reverse biased

    3. Saturation-region operation:

    Baseemitter junction forward biased

    Basecollector junction forward biased

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    Fig1: fixed biased circuit fig2: dc equivalent of fig1

    F ixed biased circuit:

    Forward Bias of BaseEmitter:

    BaseEmitter loop

    CollectorEmitter Loop;

    Applying Kirchhoffs voltage law in theclockwise direction around the indicatedclosed loop of next figure will result in

    the following:

    The dc bias network of the following Fig containsan emitter resistor to improve the stability level

    over that of the fixed-bias configuration.

    BJT bias Circuit with emitter resistor

    BaseEmitter Loop;

    Baseemitter loop

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    CollectorEmitter loop

    As a brief review of single- and double-subscript

    notation recall that:

    Where VCE is the voltage from collector to

    emitter and VC and VE are the voltages from

    collector and emitter to ground respectively. But

    in this case, since VE =0 V,we have:

    Ic Saturation

    Load Line Analysis:

    Writing Kirchhoffs voltage law around the

    indicated loop in the clockwise direction will resultin the following equation:

    Recall:

    Substituting :

    The collectoremitter loop is redrawn in Fig

    Writing Kirchhoffs voltage law for the indicated

    loop in the clockwise direction will result in:

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    The single-subscript voltage VE is the voltage from emitter

    to ground and is determined by:

    Saturation level:

    Load line analysis: