Bent Weber 1, S. Mahapatra 1,2, W, Clarke 1, M. Y. Simmons 1,2 1) School of Physics, The University...
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TRANSPORT IN ATOMIC- SCALE DOPED SILICON NANOWIRES Bent Weber 1 , S. Mahapatra 1,2 , W, Clarke 1 , M. Y. Simmons 1,2 1) School of Physics, The University of New South Wales, Sydney, NSW 2052, Australia 2) Australian Research Counsel Centre of Excellence for Quantum Computer Technology, Sydney, Australia H. Ryu, S. Lee, G. Klimeck Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907, USA L. C. L. Hollenberg Center for Quantum Computer Technology, School of Physics, University of Melbourne, VIC 3010, Australia
Bent Weber 1, S. Mahapatra 1,2, W, Clarke 1, M. Y. Simmons 1,2 1) School of Physics, The University of New South Wales, Sydney, NSW 2052, Australia 2)
Bent Weber 1, S. Mahapatra 1,2, W, Clarke 1, M. Y. Simmons 1,2
1) School of Physics, The University of New South Wales, Sydney,
NSW 2052, Australia 2) Australian Research Counsel Centre of
Excellence for Quantum Computer Technology, Sydney, Australia H.
Ryu, S. Lee, G. Klimeck Network for Computational Nanotechnology,
Purdue University, West Lafayette, IN 47907, USA L. C. L.
Hollenberg Center for Quantum Computer Technology, School of
Physics, University of Melbourne, VIC 3010, Australia
Slide 2
Applications of Silicon Nanowires In-plane gates / leads for
silicon donor-based quantum computing Silicon nanowire transistors
Fuhrer et al., NanoLetters 9 (2), 707 (2009) Fuechsle et al., Nat.
Nanotech., advance online publication (2010) Singh et al., IEEE
Electron Device Letters 27 (5), 383 (2006) Cui et al., NanoLetters
3 (2), 149 (2003)
Slide 3
As the diameter reaches the nano-scale: Surface scattering
(< 4 nm) Carrier depletion due to surface/interface states
Doping challenging Limited to (~ 10 20 cm -3 ) (VLS)
Dopant-segregation (< 5 nm) Quantum confinement (
ML planar coverage N D,2D = 2.4 x 10 14 cm -2 d < 1 nm N
D,3D = ~ 10 21 cm -3 >> N Mott ~ 3 x 10 18 cm -3 Atomistic
Modeling of Si Nanowires T = 4K Electronic structure modeling with
atomistic representation, using NEMO-3D d lith =1.7 nm d leff =3.4
nm A eff
Conclusions Narrowest doped silicon nanowires, showing Ohmic
conduction Diameter-independent resistivity, comparable to bulk
value full dopant activation down to ~2 nm Atomistic tight-binding
calculations (NEMO-3D) to compute electronic structure
Slide 9
Thanks to Dr. A. Fuhrer (now IBM Rueschlikon, Switzerland) and
Dr. T.C.G. Reusch (now OSRAM Opto Semiconductors, Regensburg,
Germany) The UNSW Quantum Electronic Devices group of Prof. A. R.
Hamilton (especially Dr. T. Martin, Dr. O. Klochan, A/Prof A. P.
Micolich) This work was supported by the Australian Research
Council, the Army Research Office under contract number
W911NF-08-1-0527 and the National Science Foundation (NSF).
Computational resources on nanoHUB.org, NICS, TACC, and Oak Ridge
National Lab were utilized.