Band Theory of Ferromagnets

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    Band theory of Ferromagnetism

    As Fe-atoms approach to form asolid, 3d and 4s orbitals overlap.

    Paulis principle applies to all of them

    over app ng atoms must eato splitting of 1 E-level into N-

    levels---energy band formation

    1 mg Fe has 1019 atoms each

    energy level in isolated atom must

    split into 1019 levels

    Density of levels in band N(E)

    No. of levels in dE = N(E)dE;

    Average E-separation = 1/N(E)

    Fig 8.22

    From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

    More splitting in 4s-levels

    Ref.: Introduction to Magnetic Materials B D Cullity

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    Band theory of Ferromagnetism

    As there are 5 3d-levels per atom with a

    Ni atom has 8d

    and 2s e-s

    capacity of10 electrons, DOS of d-level is

    higher

    Results:

    9.4 d e-s,

    0.6 s e-s

    e extent to w c t ese eve s are

    occupied (dotted line) would depend on

    number of(3d+4s) electrons in atom

    Ref.:Introduction to

    agnet c ater a sB D Cullity

    Fig 8.22From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

    Exchange forces cause spin unbalance =net moment/atom

    10 atoms case (1 e- per atom)

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    Ferromagnetism

    Water-in-a-tank analogy

    EXCHANGE force is like

    a DAM holding water

    across it

    one or more electrons to

    higher E. (these levels

    (a) The split d-band. (b) Thes-band is not affected.

    The arrows in the bands are s in ma netic moments.

    mus no e w e y

    spaced, else exchange

    forces will not be able to

    cause electron transfer)

    LOW N(E) of s-band implies widely spaced levels therein

    Fig 8.22From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

    s e ectrons are assume to ma e no contr ut ons to sp n-

    unbalance in 3d-elements

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    Maximum imbalance when one half-band is full of 5 electrons

    s/atomeelectrons4ofnumber

    s/atomeelectrons43ofnumber

    -

    -

    sx

    s)d(n

    =

    +=

    s/atomeelectrons3ofnumber -dn-x =

    At saturation, 5 d-electrons have spin UP & [(n x) 5] have spin DN

    The magnetic moment per atom is therefore,

    )](10[}]5){(5[ xnxnH == Max spin unbalance is proportional to number of unfilled e-states in d-band

    Ni: Observed H=0.6. Using this and n=10 (83d+24s) x=0.60

    )6.10( nH =

    Fig 8.22From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

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    CRIETRIA FOR EXISTANCE OF FRROMAGNETISM

    The electrons responsible for FM must lie in partially filled

    bands in order that there are vacant levels in which electronswith unpaired spins can move in

    The DOS in the bands must be high, so that the increase in

    energy caused by spin alignment will be small

    The atoms must be the right distance apart so that the

    exchan e forces can enable the d-electron s ins in one atom

    to align the spins in neighboring atoms

    Fig 8.22From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

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    770=C CT

    At RT M M 029.0=

    C

    RT

    TPartial

    Complete

    alignment Complete

    randomness

    =

    Normalized saturated magnetization (for Fe) vs. reduced

    ex

    Fig 8.22From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

    empera ure Cw ere C s e ur e empera ure .

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    For Fe, Eex=kTC 90 meV

    Maximum alignment of atomic Magnets Saturation Magnetization, (Msat)

    Lattice vibrations OR Thermal Energy (or kT) DISORIENT the atomic

    ma nets

    Fig 8.22From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

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    Magnetic Domains in a single Xtal

    Magnetostatic

    Energy density

    = B2/2

    0

    2

    2

    B

    Domain/Bloch wall = 0MWhen cooled

    from above TC

    (a) Magnetized bar of ferromagnet with only one domain and hence an external B

    (b) Formation of2 domains with opposite M reduces the external B. There are,

    , .

    (c) Domains of closure fitting at the ends eliminates the external fields at the ends.

    (d) A speciment with several domains and closure domains.

    There is no external B and the s ecimen a ears un-ma netized.

    Fig 8.22From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

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    Magnetization along EASY direction along which spinalignments are easiest (exchange Interaction is strongest/maximum)

    (a) An unmagnetized crystal of iron in the absence of an applied magnetic field.

    H=0

    .

    (b) When an external field is applied the domain wall migrates into domain B which

    enlarges A and B. The result is that the specimen now acquires net magnetization.

    Fig 8.23From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

    grows y o

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    Magnetization growth (2-domain model) as H is

    increased starting from H=0 to H=Hsat

    Movement2 domains ofdomain-

    wall

    DomainSin le

    rotationdomain

    Fig 8.23From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

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    Magnetization along

    EASY direction alongw c sp n a gnmen s are

    easiest (exchange Interactionis strongest/maximum)

    Hsat along [100] ~40 Oe

    Hsat along [111] ~400 Oe

    Along [111] M grows by

    OP : domain wall movement

    Magnetocrystalline anisotropy in a single iron crystal.Mvs.Hdepends on the

    crystal on the crystal direction and is easiest along [100] and hardest along [111]

    : oma n ro a on

    Fig 8.24From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

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    Table 8.4 : Exchange interaction, magnetocrystalline anisotropy energyK, and

    saturation magnetostriction coefficient sat

    Material Crystal Eex kTC(meV)

    Easy Hard K

    (mJ cm3)

    sat

    ( 106 )

    Fe BCC 90 ;

    cube edge

    ; cube

    diagonal

    0 :

    48:

    20 [100]

    20 [111]

    Co HCP 120 // to c axis 0: // to c axis

    450: to c

    axis

    < > < >

    cube

    diagonal

    edge 5:

    24 [111]

    From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)