AZ 193nm/248nm Top Anti-Reflective Coating · The information contained herein is, as far as we are aware, true and accurate. However, no representations or warranties, either express

The information contained herein is, as far as we are aware, true and accurate. However, no representations or warranties, either express or implied, whether of merchantable quality, fitness for any particular purpose or of any other nature are hereby made in respect of the information contained in this presentation or the product or products which are the subject of it. In providing this material, no license or other rights, whether express or implied, are given with respect to any existing or pending patent, patent application, trademarks, or other intellectual property right.

AZ 193nm/248nm Top Anti-Reflective Coating

General Products UpdateJanuary 2005

AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.

AZ 193nm/248nm T.A.R.C. Series Category and Capability

AZ AQUATAR-III Coating

EXP AQUATAR-VIII-ACoating

AZ AQUATAR-VICoating

Experimental Material(TBD)

Application

248nm Process248nm ProcessApplicable for

193nm Process193nm Process 193nm Process

Features

ExistingStandard Materialfor 248nm Process(POFS contained)

Newly DevelopedPFOS/A Free Material

ExistingStandard Materialfor 193nm Process(PFOS contained)

Newly DevelopedPFOS/A Free Material

RefractiveIndex

n@248nm : 1.43k@248nm : 0.00

n@248nm : 1.44( n@193nm : 1.51 )

k@248nm : 0.00( k@193nm : 0.0043)

n@193nm : 1.45k@193nm : 0.084

( n@248nm : 1.44 )

n@193nm : 1.4x (TBD)k@193nm : 0.0x (TBD)

Cauchy

Coefficients

A = 1.381B = 0.00647µm2

C = 0.00µm4

A = 1.3839B = 0.0050346µm2

C = 0.00µm4

A = 1.379B = 0.00262µm2

C = 0.00µm4

A = (TBD)B = (TBD)C = (TBD)


AQUATAR-III & EXP AQUATAR-VIII-A Series Spin Curve

20

30

40

50

60

70

80

1000 1500 2000 2500 3000 3500 4000

Spin speed ( rpm ) w/ 8 inch wafer

Film

thic

knes

s ( n

m )

20

30

40

50

60

70

80

1000 1500 2000 2500 3000 3500 4000


Film

thic

knes

s ( n

m )

EXP AQUATAR-VIII-A Coating 30 AQUATAR-III Coating 33 AQUATAR-III Coating 45


Comparison of n/k value EXP AQUATAR-VIII-A vs. Competitive TARC

Ellipsometer : J. A. Woollam VUV-VASEFilm thickness: 45nmn@248nm : 1.440k@248nm : 0Cauchy parameters(0.5um-0.65um):

A=1.3839, B=0.0050346, C=0

TARC-A

1.421.441.461.48

1.51.521.541.561.58

1.6

0.1 0.2 0.3 0.4 0.5 0.6 0.7wavelength (nm)

n

-0.005

0

0.005

0.01

0.015

0.02

0.025

k

nk

TARC-B

1.421.441.461.48

1.51.521.541.561.58

0.1 0.2 0.3 0.4 0.5 0.6 0.7wavelength (um)

n

-0.0200.020.040.060.080.10.120.140.16

k

nk

TARC-A

TARC-B

EXP AQUATAR-VIII-A

n@248nm : 1.48k@248nm : 0.00

n@248nm : 1.48k@248nm : 0.0049

1.36

1.38

1.4

1.42

1.44

1.46

1.48

1.5

1.52

1.54

1.56

1.58

100 150 200 250 300 350 400 450 500 550 600

Wavelength ( nm )

n-va

lue

-0.02

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

k-va

lue


2

3

4

5

6

7

8

9

10

11

12

0.44 0.45 0.46 0.47 0.48 0.49 0.5 0.51 0.52 0.53 0.54 0.55 0.56 0.57 0.58 0.59

Swing Suppression EffectEXP AQUATAR-VIII-A vs. AZ AQUATAR-III

Resist Film thickness ( µm )

Dose@

Eth ( mj/cm

2 )

Swing SuppressionEXP AQUATAR-VIII-A: 86.5%AZ AQUATAR-III : 86.5%TARC-A : 65.0%

Swing Curvewith/without AZ AQUATAR series

56789

101112131415

0.55 0.56 0.57 0.58 0.59 0.6 0.61 0.62 0.63 0.64 0.65 0.66 0.67Film Thickness (um)

Eth

(mJ/

cm2)

Without TARC

With TARC-A

With AZ AQUATAR-III 45

With AZ LExp.AQUATAR-7497


EXP AQUATAR-VIII-A Resist Compatibility – Acetal Type

Film thickness : 45nm (TARC), 510nm (PR), 80nm (BARC)SB : 90ºC/60sec. (TARC), 90ºC/90sec. (PR),180ºC/60sec. (BARC), PEB : 110ºC/60secExposure : 0.63NA/0.65sigma, Mask : Binary, Development : 2.38%TMAH 60sec.

w/o TARC

withAQUATAR-VIII-A

Pitch=360nm Pitch=450nm Pitch=720nm Isolated line

Line & Space Patterns : CD=180nm


Pitch=400nm Pitch=600nm Pitch=1200nm

Contact Patterns : CD=200nm

Film thickness : 45nm (TARC), 585nm (PR), 80nm (BARC)SB : 90ºC/60sec. (TARC), 90ºC/60sec. (PR),180ºC/60sec. (BARC), PEB : 120ºC/60secExposure : 0.63NA/ 1/2annular, Mask : HT-PSM, Development : 2.38%TMAH 60sec.

w/o TARC

withAQUATAR-VIII-A


Process Conditions

Process Conditions


EXP AQUATAR-VIII-A Resist Compatibility – ESCAP Type

Film thickness : 45nm (TARC), 540nm (PR), 80nm (BARC)SB : 90ºC/60sec. (TARC), 130ºC/60sec. (PR),180ºC/60sec. (BARC), PEB : 110ºC/60secExposure : 0.63NA/0.65sigma, Mask : Binary, Development : 2.38%TMAH 60sec.

w/o TARC

withAQUATAR-VIII-A



Process Conditions


Film thickness : 45nm (TARC), 522nm (PR), 80nm (BARC)SB : 90ºC/60sec. (TARC), 120ºC/90sec. (PR),180ºC/60sec. (BARC), PEB : 130ºC/60secExposure : 0.63NA/ 1/2annular, Mask : HT-PSM, Development : 2.38%TMAH 60sec.

w/o TARC

withAQUATAR-VIII-A

Pitch=400nm Pitch=600nm Pitch=1200nmProcess Conditions

Line & Space Patterns : CD=180nm

Contact Patterns : CD=200nm


AZ AQUATAR-III Coating CD Uniformity Improvement Effect

Measured CD Uniformity Without TARC14 wafers(8"), 56 sites/wafer, 0.29μm VIA on Product

(14 wafer SiO 2 range = 3000Å)

0

5

10

15

20

25

30

35

40

45

50

0.25

0.25

3

0.25

6

0.25

9

0.26

2

0.26

5

0.26

8

0.27

1

0.27

4

0.27

7

0.28

0.28

3

0.28

6

0.28

9

0.29

2

0.29

5

0.29

8

0.30

1

0.30

4

0.30

7

0.31

0.31

3

0.31

6

0.31

9

Freq

uenc

y

Mean: 0.294μmMin: 0.273μmMax: 0.316μm3 Sigma: 0.0246μm

Tar: 0.29μmLSL: 0.261μmUSL: 0.319μm

Cp 1.178Cpk 0.967

248nm DUV process:ASML 5500/550Annular illumination0.53 NAOuter σ 0.80Inner σ 0.35

ProcessConditions:

14 wafers withtopography

Oxide thicknessincrement of ~250Åper wafer for 3000Årange across all 14wafers (worst CMPlot to lot processvariation prediction)

DUV resist processwithout TARC.

without AZ AQUATAR-III


AZ AQUATAR-III Coating CD Uniformity Improvement Effect

Measured CD Uniformity With AZ®Aquatar®III14 wafers(8"), 56 sites/wafer, 0.29μm VIA on Product

(14 wafer SiO 2 range = 3000Å)

0

10

20

30

40

50

60

70

80

0.25

0.25

3

0.25

6

0.25

9

0.26

2

0.26

5

0.26

8

0.27

1

0.27

4

0.27

7

0.28

0.28

3

0.28

6

0.28

9

0.29

2

0.29

5

0.29

8

0.30

1

0.30

4

0.30

7

0.31

0.31

3

0.31

6

0.31

9

Freq

uenc

y

Mean: 0.287μmMin: 0.265μmMax: 0.304μm3 Sigma: 0.0165μm

Tar: 0.29μmLSL: 0.261μmUSL: 0.319μm

Cp 1.807Cpk 1.651

248nm DUV process:ASML 5500/550Annular illumination0.53 NAOuter σ 0.80Inner σ 0.35

ProcessConditions:

14 wafers withtopography

Oxide thicknessincrement of ~250Åper wafer for 3000Årange across all 14wafers (worst CMPlot to lot processvariation prediction)

DUV resist processwith AZ AQUATAR-III

without AZ AQUATAR-III

70% Improvement in Cpk


AZ AQUATAR-VI-A Series Spin Curve

15

25

35

45

55

1000 1500 2000 2500 3000 3500 4000


Film

thic

knes

s ( n

m )

15

25

35

45

55

1000 1500 2000 2500 3000 3500 4000


Film

thic

knes

s ( n

m )

AQUATAR-VI-A Coating 25 AQUATAR-VI-A Coating 30


Optical Parameters, n/k value

1.36

1.38

1.4

1.42

1.44

1.46

1.48

1.5

1.52

100 150 200 250 300 350 400 450 500 550 600

Wavelength ( nm )

n-va

lue

-0.02

0

0.02

0.04

0.06

0.08

0.1

k-va

lue

AZ AQUATAR-VI-A


100

105

110

115

120

125

130

135

140

145

150

155

160

290 300 310 320 330 340 350 360 370 380 390

Photoresist film thickness ( nm )

CD

( nm

)

Swing Suppression EffectAZ AX1050P with and without AZ AQUATAR-VI-A

AZ AX1050P without AZ AQUATAR-VI-A-30

AZ AX1050P with AZ AQUATAR-VI-A-30

Documents

AZ 193nm/248nm Top Anti-Reflective Coating · The information contained herein is, as far as we are aware, true and accurate. However, no representations or warranties, either express