Automotive Power Module Packaging: Issues and Technologies · 2012-04-07 · Automotive Power Module Packaging: Issues and Technologies. 2. ... Power electronics module packaging

Zhenxian Liang, Fred Wang, Laura MarlinoOrganization: ORNLEmail: [email protected]: 865‐946‐1467

APEC’11, Special Session 2.1March 8, 2011

This presentation does not contain any proprietary or confidential information

Automotive Power Module Packaging: Issues and Technologies

2 Managed by UT-Battellefor the Department of Energy

ORNL Power Electronics Packaging Program

Power electronics module packaging is one enabling technology

for performance improvement and cost reduction

Power electronics System:

Constitution and cost breakdown


Semiconductors and Their Packaging

Automotive Power Module Qualification

Performance(Electrical, Thermal)

Density (per volume/weight)

Functions(Intelligence)

Cost($/kW)

Reliability(Thermo-mechanical)

3


Automotive Power Module Reliability Requirement

Alain Calmels www.imapsfrance.org/ABSTRACT/.../MICROSEMI_251109.pdf

Beckedahl P. etal, “A New Module Concept for Automotive Applications PCIM07

Thoben M. etal, “From vehicle Drive Cycle to reliability testing of Power Modules,” Power Electronics Europe, No.6, 2008, P.21

27,000 Power cycles @

ΔT=100°C, Tjmax

=150°C10,000 Thermal cycles @ ΔT=80°C


Automotive Power Module Cost Estimation


Power Semiconductor Cost Analysis

Cost= Die size (S) * $/unit area

Increase Semiconductor Wafer Size (from 6” to 8”);

Barrier: Mechanical Support of Thin Wafer (70um/kV)

From Si to SiC, GaN, etc.

Semiconductor: Major Cost of Power Module;

Counted by Die Area;

Dependent on Device Structure


Interaction of Power Module Parameters

S

)()(

)(

/

2,

,

cmPTT

TTP

HPS

inaj

spja

aj

spjaloss

fLoss

•−

•=

−

•=

=

θη

θη: , Power device loss coefficient

θja, sp Specific Thermal Resistance (C/(W/cm2))

(Tj -Ta ) Operation Temperature Difference

inLoss PP •= η

)( CP

PT

inja

jalossj

°••=

•=Δ

θη

θ

maxjj TT ≤


0 100 200 300 400 500 6000

50

100

150

200

250

300

Abs

(cur

rent

) (am

ps)

Time(s)

US06 Drive Cycle

Automotive Power Module: Comprehensive Design

Die area (S)

0 100 200 300 400 500 600 70060

80

100

120

140

160

180

Time(S)

Tem

pera

ture

(C)

Temperature Profile Under US06 Drive Cycle

Ta=65CTa=105Cdie area S(cm2)=0.75die area S(cm2)=0.75

0 100 200 300 400 500 600 7000

50

100

150

200

250

300

Time(S)

Pow

er L

oss

(W)

An Inverter Power Loss Profile Under US06 Drive Cycle

EnergyLoss (J)=22599(S=0.75)

0 5 10 15 20 25 30 35 40 45 50 55 60 65 700

5

10

15

20

25

30

35

40

45

50

55

60

65

70

Delta Tj(C)

Num

ber

An Inverter Delta Tj Profile Under US06 Drive Cycle


Packaging Paradigm Shift and Challenges

Power Semiconductors Blocks

Integrated Advanced Cooler

Integrated Advanced Cooler

Signal

Block

Power

BusHigh Temperature

RobustnessHigh TC/PC, Reliability

Cost Effective Manufacturability

Highly Efficient Cooling

HT Material IntegrityHigh-melting bonding (Ag, Au and alloys);

Inorganic encapsulate (glass);

Nano Electrical and Thermal materials

CTE MatchingCTE modified Materials (AlSiC, Cu-x, Al-x,

Si3N4),

Structure/buffer optimization

Structural OptimizationDouble sided Electrical Interconnection;

Integrated cooling (plus Microchannel, spray, jet, phase change, etc)

Processing AdvanceReflowing, Brazing /Sintering, Transient

liquid phase bonding, thermal press

bonding, deposition, Ceramic spray,


ORNL Advanced Power Module Packaging LabFacility Layout

Chemical Processing

Station

Reflow Ovens

Thermal Cycle

Chamber

Wire Bonder

Encapsulate Set

Micro-Probe Process

Inspection

Thermal Shock Oven

Sintering Oven

Paste Printer

Clean Assembly

Bench


Evaluation of Advanced Automotive Module Packaging Technologies


Microstructure and Mechanics Analysis of Packaging Constitution

Voids at Si/Ag interface

SKiM

Prius 2010

Solder PorosityTPM


Packaging Electrical Parasitic Parameters Extraction

0.80 mΩ18.3 nH12.9 nH

Positive

13 mΩ35.6 nH

Negative

Neutral

13 mΩ35.6 nH

0.87 mΩ

0.37 mΩ

0.37 mΩ

0.41 mΩ

0.41 mΩ10.6 nH 8.5 nH

10.6 nH 8.5 nH

0.80 mΩ18.3 nH12.9 nH0.87 mΩ

0.44 mΩ

11.3 nH14.4 nH

Positive

7 mΩ19.6 nH

Negative

Neutral

7 mΩ19.6 nH

0.33 mΩ

0.17 mΩ0.18 mΩ7.3 nH 6.5 nH

0.44 mΩ11.3 nH14.4 nH

0.33 mΩ

0.17 mΩ0.18 mΩ7.3 nH 6.5 nH

L=50.3nH R=2.35mΩ

L=39.5nH R=1.12mΩ

Prius 2010

Camry


Ther

mal

Res

istiv

ity o

f lay

er (K

cm2 /W

)

0.3

0

0.2

0.1

Layer

Thermal Grease

Cu Baseplate

Solder DBC Cu

DBC Cu

DBC Ceramic

Solder Si Die

CHIP

Base Substrate

Baseplate

Heat Sink

Thermal Resistance Simulation In Power Module

Thermal Grease

5 10 15 20 25 30 35 40 45 5010

15

20

25

30

35

40

45

50

55

60

65

Pressure (psi)

Add

ition

al T

hick

ness

(um

)

H=1094 Mpa, Ktim=1, σ2=1 um

H=745 Mpa, Ktim=2, σ2=5 um

H=745 Mpa, Ktim=2, σ2=6.9 um


Integrated Cooling Power Module

CopperCladding

Diode

IGBT

RibbonBonds

Coolant Channel


60% Thermal Performance Improvement

L=12.8nH R=0.22mΩ

Electrical Parasitic Parameters (20-30% of Prius)

O

P

N

Gu

Eu

GL

EL

ORNL Advanced Power Device Packaging Structure

An Integrated Phase Leg Packaging Design


High Temperature Limit of Si Switch

50 100 150 200 250 300 350101

102

103

104

105

106

Intrinsic Temperature(C)

BV

(V)

g p

NPTW=60umW=100um

ni

=nDSecondary

Breakdown (Dynamic Avalanche) Failure

CriterionTi

=240C for 600V PN Junction

High TemperaturePackaging

Target

Rated Maximum Junction

Temperature

Conventional Packaging

Temperature Limit


High Temperature Packaging: Material CTE Matching

200°C Reliable Operation Temperature


High Temperature Packaging: Structure Optimization

Puqi Ning, Ph. D dissertation, Virginia Tech, 2010


High Temperature Packaging: Die Attachment

Aluminum tab

Aluminum tab

Silversintered layer

Ni-Cubond coating

Agplating

25 µm

Semi-disk usedto promote

semi-articulatedaligned loading

Load trainpush rod

One tabis sheared

off ofthe other

Pd on AlAg on Cu


Si IGBT (1200V): High Temperature Operation

16.8mA 200 ˚C

fs

=10kHz

20 40 60 80 100 120 140 160 180 2000

20

40

60

80

100

120

140

Junction temperature

IGB

T Lo

ss

fs =15kHzfs =10kHzfs =5kHzRthja =0.73K/WRthja =0.86K/WRthja =1.04K/W

Coolant temperature: 105˚C

VCE

IC

RCE(on)

VT0

VGE

=15V

I-V Characterization Leakage Current at Block State

Power Loss vs Temperature Power Loss vs Thermal Management


High Power Density Integrated Traction Drive

ModularPole-Drive

Unit

IMMD

(a)105 ˚C water ethylene glycol (b) 90 ˚C transmission oil


Summary

Developing power electronics packaging is a vital effort to meet DOE VTP targets in products’performance improvement and cost reduction.

Advancing packaging technology with materials development, structure optimization and processing innovation.

Improving cost‐effectiveness, efficiency and reliability of power electronics modules by improved electrical performance, reliable high temperature operation, efficient thermal management, highly functional integration and power density.


Acknowledgement

Thanks And Questions?

The automotive power electronics packaging works have been primarily

supported by DoE

under Vehicle Technology Programs. The authors would

also like to thank their colleagues, Andrew A. Wereszczak, Randy Wiles, Puqi

Ning, Madhu

Chinthavali, all with ORNL for the contribution to this

presentation

Documents

Automotive Power Module Packaging: Issues and Technologies · 2012-04-07 · Automotive Power Module Packaging: Issues and Technologies. 2. ... Power electronics module packaging