Automotive P-Channel 60 V (D-S) 175 °C · PDF fileSQ2361EES Vishay Siliconix S12-2198-Rev. C, 24-Sep-12 1 Document Number: 70953 For technical questions, contact: [email protected]

SQ2361EESwww.vishay.com Vishay Siliconix

S12-2198-Rev. C, 24-Sep-12 1 Document Number: 70953

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 60 V (D-S) 175 °C MOSFETFEATURES• TrenchFET® Power MOSFET• Typical ESD Protection: 800 V• AEC-Q101 Qualified• 100 % Rg and UIS Tested

• Material categorization:For definitions of compliance please see www.vishay.com/doc?99912

Notesa. Pulse test; pulse width 300 μs, duty cycle 2 %.b. When mounted on 1" square PCB (FR-4 material).

PRODUCT SUMMARYVDS (V) - 60

RDS(on) () at VGS = - 10 V 0.150

RDS(on) () at VGS = - 4.5 V 0.200

ID (A) - 2.5

P-Channel MOSFET

S

D

G

G

TO-236 (SOT-23)

S

D

Top View

2

3

1

SQ2361EES

Marking Code: 8Nxxx

ORDERING INFORMATIONPackage SOT-23

Lead (Pb)-free and Halogen-free SQ2361EES-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS - 60V

Gate-Source Voltage VGS ± 20

Continuous Drain CurrentTC = 25 °C

ID- 2.5

A

TC = 125 °C - 1.4

Continuous Source Current (Diode Conduction) IS - 2.5

Pulsed Drain Currenta IDM - 10

Single Pulse Avalanche CurrentL = 0.1 mH

IAS - 15

Single Pulse Avalanche Energy EAS 11 mJ

Maximum Power DissipationaTC = 25 °C

PD2

W TC = 125 °C 0.67

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C

THERMAL RESISTANCE RATINGSPARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mountb RthJA 175°C/W

Junction-to-Foot (Drain) RthJF 75





Notesa. Pulse test; pulse width 300 μs, duty cycle 2 %.b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 60 - -V

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - - 2.5

Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 30 mA

VDS = 0 V, VGS = ± 8 V - - ± 2

μA Zero Gate Voltage Drain Current IDSS

VGS = 0 V VDS = - 60 V - - - 1

VGS = 0 V VDS = - 60 V, TJ = 125 °C - - - 50

VGS = 0 V VDS = - 60 V, TJ = 175 °C - - - 150

On-State Drain Currenta ID(on) VGS = - 10 V VDS - 5 V - 10 - - A

Drain-Source On-State Resistancea RDS(on)

VGS = - 10 V ID = - 2.4 A - 0.115 0.150

VGS = - 10 V ID = - 2.4 A , TJ = 125 °C - - 0.260

VGS = - 10 V ID = - 2.4 A, TJ = 175 °C - - 0.310

VGS = - 4.5 V ID = - 1.8 A - 0.160 0.200

Forward Transconductanceb gfs VDS = - 10 V, ID = - 2 A - 5 - S

Dynamicb

Input Capacitance Ciss

VGS = 0 V VDS = - 30 V, f = 1 MHz

- 435 545

pF Output Capacitance Coss - 55 70

Reverse Transfer Capacitance Crss - 40 50

Total Gate Chargec Qg

VGS = - 10 V VDS = - 30 V, ID = - 6 A

- 11.2 17

nC Gate-Source Chargec Qgs - 1.6 -

Gate-Drain Chargec Qgd - 3.2 -

Gate Resistance Rg f = 1 MHz 2.7 5.4 8.1

Turn-On Delay Timec td(on)

VDD = - 30 V, RL = 20 ID - 1.5 A, VGEN = - 10 V, Rg = 1

- 7 11

nsRise Timec tr - 8 12

Turn-Off Delay Timec td(off) - 19 29

Fall Timec tf - 8 12

Source-Drain Diode Ratings and Characteristicsb

Pulsed Currenta ISM - - - 10 A

Forward Voltage VSD IF = - 1.5 A, VGS = 0 V - - 0.8 - 1.2 V





TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Current vs. Gate-Source Voltage

Output Characteristics

Transconductance

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

On-Resistance vs. Drain Current

VGS - Gate-to-Source Voltage (V)

- G

ate

Cur

rent

(A

)I G

SS

0

0.001

0.002

0.003

0.004

0.005

0 5 10 15 20 25

TJ = 25 °C

00 1 2 3 4 5

2

4

6

8

10

12

VDS - Drain-to-Source Voltage (V)

I D -

Dra

in C

urre

nt (A

)

VGS = 10 V thru 6 V

VGS = 5 V

VGS = 4 V

VGS = 3 V

0

2

4

6

8

10

0 1 2 3 4 5 6

ID - Drain Current (A)

-Tr

ansc

ond

ucta

nce

(S)

gfs

TC = 125 °CTC = 25 °C

TC = - 55 °C


- G

ate

Cur

rent

(A

)I G

SS

10-10

10-8

10-6

10-4

10-2

10-0

0 7 14 21 28 35

TJ = 150 °C

TJ = 25 °C

10-9

10-7

10-5

10-3

10-1

0

2

4

6

8

10

0 2 4 6 8 10

TC = - 55 °C

TC = 125 °C

TC = 25 °C


I D -

Dra

in C

urre

nt (A

)

0.0

0.1

0.2

0.3

0.4

0.5

0 2 4 6 8 10

VGS = 10 V

VGS = 4.5 V

RD

S(o

n) -

On-

Res

ista

nce

(Ω)

ID - Drain Current (A)





TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

Gate Charge

Source-Drain Diode Forward Voltage

Threshold Voltage

Crss0

100

200

300

400

500

600

700

800

0 10 20 30 40 50 60

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

C -

Cap

acita

nce

(pF)

0.5

0.9

1.3

1.7

2.1

2.5

- 50 - 25 0 25 50 75 100 125 150 175

ID = 1.7 A

VGS = 10 V

VGS = 4.5 V

TJ - Junction Temperature (°C)

(Nor

mal

ized

)R

DS

(on)

- O

n-R

esis

tanc

e

0.0

0.2

0.4

0.6

0.8

1.0

0 2 4 6 8 10

TJ = 25 °C

TJ = 150 °CRD

S(o

n) -

On-

Res

ista

nce

(Ω)


0

2

4

6

8

10

0 2 4 6 8 10 12

ID = 6 A

VDS = 30 V

Qg - Total Gate Charge (nC)

VG

S -

Gat

e-to

-Sou

rce

Vol

tage

(V)

TJ = 25 °C

TJ = 150 °C

0 0.2 0.4 0.6 0.8 1.0 1.2

1

0.01

0.001

0.1

10

100

VSD - Source-to-Drain Voltage (V)

I S -

Sou

rce

Cur

rent

(A)

- 0.5

- 0.2

0.1

0.4

0.7

1.0

- 50 - 25 0 25 50 75 100 125 150 175

ID = 5 mA

ID = 250 μA

VG

S(th

) Var

ianc

e (V

)

TJ - Temperature (°C)





THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Drain Source Breakdown vs. Junction Temperature Safe Operating Area

Normalized Thermal Transient Impedance, Junction-to-Ambient

- 80

- 76

- 72

- 68

- 64

- 60

- 50 - 25 0 25 50 75 100 125 150 175

ID = 1 mA

TJ - Junction Temperature (°C)

VD

S -

Dra

in-t

o-S

ourc

e V

olta

ge (V

)

0.010.01 0.1 1 10010

0.1

1

10

VDS - Drain-to-Source Voltage (V)* VGS > minimum VGS at which RDS(on) is specified

I D -

Dra

in C

urre

nt (A

)

BVDSS LimitedTC = 25 °CSingle Pulse

1 ms

10 ms

100 ms

100 μs

1 s,10 s, DC

IDM Limited

Limited by RDS(on)*

10-3 10-2 1 10 60010-110-4 100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

tneisnarT evitceffE dezila

mroN

ecnadepmI la

mrehT

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 175 °C/W

3. T JM - TA = PDMZthJA(t)

t 1 t 2

t 1 t 2

Notes:

4. Surface Mounted

P DM





THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Foot

Note• The characteristics shown in the two graphs

- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70953.

10-3 10-2 1 1010-110-4

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

tneisnarT evitceffE dezila

mr oN

ecnade pmI la

m re hT

Legal Disclaimer Noticewww.vishay.com Vishay

Revision: 08-Feb-17 1 Document Number: 91000

DisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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Documents

Automotive P-Channel 60 V (D-S) 175 °C · PDF fileSQ2361EES Vishay Siliconix S12-2198-Rev. C, 24-Sep-12 1 Document Number: 70953 For technical questions, contact: [email protected]