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SiC Power Diodes and MOSFETs for high-‐performance power electronics applications
Kevin MatochaPresident
ARL SiC MOS Workshop18 August 2016
We acknowledge our sponsors who have supported Monolith Semi’s development of SiC diodes and MOSFETs:
• DE-AR0000442• W911NF-14-2-0112 and W911-NF-15-2-0088 • DE-SC0011395
Special thanks to Xin Wu at United Technologies, Andy Lemmon at Univ. Alabama
Acknowledgments
Monolith Semi SiC power devices
Currently focused on our Gen1 1200V SiC diode and MOSFET technology in discrete packages.
Demonstrated state-‐of-‐art performance and reliability.
We have scaled MOSFET currents to 150A single die.
We are now developing 900V technology for automotive traction drive applications.
Assembly partners
Monolith Semiconductor Inc.
• Fabless supplier of SiC MOSFETs and Schottky diodes• Leverage an automotive-‐grade silicon CMOS foundry running 6”
SiC wafers to achieve high volume and lower cost(others run on 4” wafers with half the useable area)
• SiC MOSFETs with best-‐in-‐class performance and reliability
Monolith Semiconductor Inc.
• Device design• Process development• Characterization• Refinement & optimization
6” diameter(150 mm)
SiC epiwafer vendors Device Manufacturing
4
150 mm150 mm
Monolith | Path to Commercialization
575 mm
December 2012 Monolith Semiconductor incorporated
May 2013 Demonstrated SiC DMOSFETs, 1700V, 5.5 mΩ-‐cm2
5 Amp, stable at 225°C
December 2013Inked agreement with domestic high-‐volume 150mm silicon foundry
April 2014 Demonstrated 1700V, 10A JBS diodes fabricated on 150mm SiC wafers
August 2014Demonstrated first 150mm SiC DMOSFETs in USA
1700V, 3.1 mΩ-‐cm2 SiC DMOSFETs 40 Amp, 45 mΩ
2013 2014
December 2014Established headquarter in Round Rock, TX with full design and testing capability
2015
December 2015Formed strategic partnership with Littelfuse for product marketing and customer support
MSA12N080A Revision00.2 8
Silicon Carbide Power MOSFET
MSA12N080A1200 Volt, 80 mΩ
Monolith Semiconductor Inc.
ØP 3.560 3.660 0.140 0.144
ØP1 7.063 7.317 0.278 0.288
L1 4.168 4.472 0.165 0.175
Q 6.043 6.297 0.238 0.248
E1 13.893 14.147 0.547 0.557
L 20.053 20.307 0.789 0.799
D2 1.063 1.317 0.042 0.052
e 5.450 0.215
E 15.773 16.027 0.621 0.631
D 20.823 21.077 0.820 0.830
D1 17.393 17.647 0.685 0.695
b2 1.903 2.386 0.042 0.052
c 0.600 0.752 0.024 0.029
b 1.073 1.327 0.042 0.052
b1 2.873 3.381 0.113 0.133
A1 2.273 2.527 0.090 0.100
A2 1.853 2.108 0.073 0.083
DIM MILLIMETERS INCHES
MIN MAX MIN MAXA 4.903 5.157 0.193 0.203
MSA12N080A – 1200V, 80 mOhm SiC MOSFET
MSA12N080A Revision00.2 8
Silicon Carbide Power MOSFET
MSA12N080A1200 Volt, 80 mΩ
Monolith Semiconductor Inc.
ØP 3.560 3.660 0.140 0.144
ØP1 7.063 7.317 0.278 0.288
L1 4.168 4.472 0.165 0.175
Q 6.043 6.297 0.238 0.248
E1 13.893 14.147 0.547 0.557
L 20.053 20.307 0.789 0.799
D2 1.063 1.317 0.042 0.052
e 5.450 0.215
E 15.773 16.027 0.621 0.631
D 20.823 21.077 0.820 0.830
D1 17.393 17.647 0.685 0.695
b2 1.903 2.386 0.042 0.052
c 0.600 0.752 0.024 0.029
b 1.073 1.327 0.042 0.052
b1 2.873 3.381 0.113 0.133
A1 2.273 2.527 0.090 0.100
A2 1.853 2.108 0.073 0.083
DIM MILLIMETERS INCHES
MIN MAX MIN MAXA 4.903 5.157 0.193 0.203
MSA12N080A – 1200V, 80 mOhm SiC MOSFET
Device Expertise | SiC MOSFETs
Monolith SiC Power MOSFETsSpecific on-‐resistance, Ron,sp
• Measures how much current can be generated for a given die size• The smaller the value, the smaller the die• The smaller the die, the lower the cost• The smaller the die, the better the switching performance
Comp A – Gen 1Comp A – Gen 2
Comp B
Monolith Semi’s SiC MOSFETs have industry-‐leading performance, particularly at high temperature.
Industry-‐leading SiC MOSFET technology
8
Comparison of 80 mOhm, 1200V SiC MOSFETs
Monolith SiC Gate Oxide Reliability
Our typical operating gate electric field is 4MV/cm (off the left-side of x-axis scale).
Project > 100 year life at 200°C+
MTT
F in
Log
10(
seco
nds)
1010 s=100 yrs
Presented @ ICSCRM 2015
We have worked with NIST to show the “intrinsic” reliability of Monolith Semi’s gate oxides.
DMOS Qualification Plan:AEC-‐Q101 is the starting point
High Temperature Gate Bias: 1200V, 80 mOhmThreshold voltage Stability – 1000 hrs, 175C
Graph Builder
VT @ 10mA (VGS=VDS)
Stress_TimeInitial 24Hrs 170Hrs 500Hrs 1002Hrs
VT @
10
mA
(VG
S=VD
S)0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Where(50 rows excluded)
Thre
shol
d Vo
ltage
@ 1
0mA
(Vol
ts)
High-‐Temperature Gate BiasVGS=-‐10V, T=175C, 1000 hrs
High-‐Temperature Gate BiasVGS=+25V, T=175C, 1000 hrs
Less than 300mV shift in threshold voltage after 1000 hrs at 175C (+25V/-‐10V)
Graph BuilderVTH2_Id=10mAV vs. Stress_Time
VTH2_Id=10mAVSublot7916-80
0Hrs 24Hrs 168Hrs 501Hrs 1000Hrs
VTH
2_Id
=10m
AV
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
Where(Sublot = 7916-80 and Stress_Time = 0Hrs, 24Hrs, 168Hrs, 501Hrs, 1000Hrs)
Thre
shol
d Vo
ltage
@ 1
0mA
(Vol
ts)
High Temperature Reverse Bias: 1200V, 80 mOhmHTRB @ VDS=960V for 1000 hrs, T=175C
High-‐Temperature Gate Bias: VDS=960V, T=175C, 1000 hrs
No shift in drain leakage or blocking voltage after 1000 hrs @ 960V, 175C.
Graph Builder
Breakdown Voltage @ 250uA (VGS=0V)
Stress_TimeInitial 24Hrs 170Hrs 500Hrs 1002Hrs
Brea
kdow
n Vo
ltage
@ 2
50uA
(VG
S=0V
)
0100200300400500600700800900
10001100120013001400150016001700
Where(Stress_Time = Initial, 24Hrs, 170Hrs, 500Hrs, 1002Hrs)
Bloc
king
Vol
tage
, VG
S=0V
(Vol
ts)
Graph Builder
HVIDSS_PostBV_VDS=1250V
Stress_TimeInitial 24Hrs 170Hrs 500Hrs 1002Hrs
HVI
DSS
_Pos
tBV_
VDS=
1250
V1e-9
2e-93e-94e-95e-97e-9
1e-8
2e-83e-84e-85e-87e-8
1e-7
2e-73e-74e-75e-76e-78e-71e-6
2e-63e-64e-65e-66e-68e-61e-5
Where(Stress_Time = Initial, 24Hrs, 170Hrs, 500Hrs, 1002Hrs)
Drai
n Le
akag
e, V
DS=1
200V
, VG
S=0V
(Am
ps)
DMOS Ruggedness Testing: Short Circuit
Monolith Semi 1200V, 80 mOhm SiC MOSFET (MSA12N080A)
DC link voltage: 600VGate drive: VGS=+20V
Monolith’s 80mOhm SiC MOSFET survives 5 us short circuit with 600V DC bus.
Prof. S. BhattacharyaShivam Gupta
DMOS Ruggedness Testing: Avalanche Energy
L = 20mH Ipeak= 12.6AEaval= 1.4J
Prof. S. BhattacharyaShivam Gupta
1600V12.6A
Monolith Semi 1200V, 80 mOhm DMOSFET (MSA12N080A)
Silicon Carbide Reliability
Are Silicon reliability models and qualification tests adequate for
Silicon Carbide devices?
APEC | 5kW -‐ 200kHz All-‐SiC Buck Converter
16Prof. Andy Lemmonand Levi Gant
Monolith SiC MOSFET: 1200V, 80 mOhm
Monolith SiC Diodes1200V, 2 x 10 A
Option for synchronous rectification
Monolith: Live Converter Demo @
PCIM | 5kW -‐ 200kHz All-‐SiC Buck Converter
17
Monolith diodes and MOSFETs: Live Converter Demo @ PCIM
High-‐frequency boost converter Demo illustrates the value of Silicon carbide over silicon IGBTs
Circuit Demonstration | Datacenter DC-‐DC
Parameter ValueVIN (Nominal) 675 VVOUT (Nominal) 350 VOutput Regulation ±1 VLoad Range 1 kW to 5 kW Switching Frequency 25 kHz to 200 kHz
Buck Converter, Air-‐cooled
18
675V
350V
Monolith: 1200V, 80 mOhm SiC MOSFET
Monolith: 1200V, 2x10A SiC diodes
96.8
97.0
97.2
97.4
97.6
97.8
98.0
98.2
98.4
98.6
98.8
99.0
99.2
1000 2000 3000 4000 5000
Efficiency (%)
Load (W)
Efficiency vs. Load (25 kHz)
Monolith
IGBT 1
IGBT 2
Performance | Monolith SiC MOSFETs vs. IGBTs (25 kHz)
19
0
20
40
60
80
100
120
140
160
180
1000 2000 3000 4000 5000
Temp. (C)
Load (W)
Temperature vs. Load (25 kHz)
Monolith
IGBT 1
IGBT 2
Performance | Monolith SiC MOSFETs vs. IGBTs (25 kHz)
20
Performance |Monolith SiC MOSFETs @ 200kHz
96.8
97.0
97.2
97.4
97.6
97.8
98.0
98.2
98.4
98.6
98.8
99.0
99.2
1000 2000 3000 4000 5000
Efficiency (%)
Load (W)
Efficiency vs. Load (200 kHz)
Monolith
SiC MOSFET 1
SiC MOSFET 2
SiC MOSFET 3
21
Filter Size and weight reduction by 5x
Monolith Semi’s SiC MOSFETs are best-‐in-‐class for all commercial devices.
Performance | Monolith SiC MOSFETs @ 200 kHz
0
20
40
60
80
100
120
140
160
180
1000 2000 3000 4000 5000
Temp. (C)
Load (W)
Temperature vs. Load (200 kHz)
Monolith
SiC MOSFET 1
SiC MOSFET 2
SiC MOSFET 3
22Monolith Semi’s SiC MOSFETs are best-‐in-‐class for all commercial devices.
5kW -‐ 200kHz All-‐SiC Buck Converter
23
Monolith SiC MOSFET: 1200V, 80 mOhm
Monolith SiC Diodes1200V, 2 x 10 A
Option for synchronous rectification
Switching Frequency and Filter size
Filter size at 25 kHz
Filter size at 200 kHz
Switching Frequency and Filter size
Switching Frequency and Filter size
200 kHz
25 kHz
With SiC, you can deliver the same power with Less Bill of Materials -‐> Lower size, weight -‐>Lower cost
With SiC: Intelligent, efficient power control can be more affordable
§ 900V, 150 Amp diodes developed for traction drive inverters under DOE Vehicles Technology Office -‐ Phase I SBIR
Current Scaling | 900V, 150A SiC Schottky diodes
Vehicle Technology Office
Current Scaling | 1200V, 150A SiC DMOSFETs
0
50
100
150
200
250
300
350
400
0 2 4 6 8 10
Drain.Curre
nt,.ID.(A
mps)
Drain.Voltage,.VDS.(Volts)
Monolith.1200V,.10.mOhm.SiC.MOSFET
0V
10V
15V20V
6"mm
9"mm
Monolith demo: 1200V, >150 Amp SiC DMOSFETs
Now scaling SiC MOSFET technology to 900Vfor automotive traction applications (DOE VTO SBIR Phase I)
0
0.0002
0.0004
0.0006
0.0008
0.001
0.0012
0 250 500 750 1000 1250 1500 1750
Drain/Curre
nt,/ID/(A
mps)
Drain/Voltage,/VDS/(Volts)
Monolith/1200V,/10/mOhm/SiC/MOSFET
Blocking Voltage1685V
Dr. Ed ShafferArmy Research Lab Energy and Power, Division Chief
Monolith SiC DMOSFET Summary
Monolith Semi has developed SiC device technology for diodes and MOSFETs, with manufacturing in a high-‐volume 6” fab.
We are scaling voltage (900, 1200 V) and current (20-‐150 Amps) of our SiC diodes and MOSFETs
We have demonstrated the ability of our SiC MOSFETs and diodes to reduce the size, weight and cost of power electronics systems.
ARPA-‐e SWITCHES