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Arachnid: A CMOS MAPS R&D programme Adrian Bevan ([email protected])

Arachnid: A CMOS MAPS R&D programme Adrian Bevan ([email protected])

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Arachnid:

A CMOS MAPS R&D programme

Adrian Bevan ([email protected])

Overview

2

What is an INMAPS device?

The Cherwell chip

Characterisation work

Test beam

Applications

Chip design for ALICE

Outlook

What is an INMAPS device?

3

INMAPS:

4

Charge collection inefficiency across a pixel is detrimental to efficient system design: Want to have smart pixels Requires circuitry in pixel for rudimentary signal

processing Use a deep p-well to shield the N-well in chip electronics

Isolated N-well Monolithic Active Pixel Sensors

STANDARD CMOS INMAPSe.g. See J.P. Crooks et al., Proc. IEEE Symp on Nucl. Sci (2007), 2, 931-935. M. Stanitzki et al., Proc. IEEE Symp. on Nucl. Sci. (2007), 1, 254-258 J. A. Ballin et al. Pixels ,Sensors 2008, 8(9), 5336-5351.

TPAC 1.X Results

F

B

Pixel profiles

Using 55Fe sources and IR lasers Using the test pixels (analog

output) IR laser shows impact of

deep p-well implant

Marcel Stanitzki, Pixel 2010

)

Typical resistivity ~ 10-

100Ωcm

High resistivity

~ 1-10kΩcm

Standard / Hi-res EPI Layers

6

Testing devices with standard and high resistivity to compare properties:

Standard: Slow Radiation soft devices

High Res: Faster charge collection Reduced charge spread Increased radiation tolerance

3T vs 4T architecture

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3T: Read out and charge collection

are in the same area.

4T: 3 additional elements Readout and charge collection

area are at different points Benefits

Low Noise via in-pixel correlated double sampling (CDS)

High Gain

3T

4T

INMAPS Roadmap

8

Calo

rim

etr

yTr

ack

ing

Vert

exin

g

Deep p-well

TPAC 1.0 TPAC 1.2TPAC 1.1

High Res & 4T

INM

AP

S

FORTIS 1.0 FORTIS 1.1

TODAY

Stitching

TPAC forALICE

CHERWELL CHERWELL2

FuturePast

DECAL

The Cherwell chip

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The Cherwell Chip

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Cherwell Floorplan

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There are two sides to the chip: Vertexing:

Reference pixels: 4T structure with 25✕25 m μpixels [48✕96].

Strixels: Reference style pixel with in column ADC [48✕96].

Calorimetry DECAL 25: 4 of these can be

ganged together to make a 50✕50 m pixel [96μ ✕192].

DECAL 50: 50✕50 m pixel μfor calorimetry [48✕96].

(Reference)

Cherwell Floorplan

12

There are two sides to the chip: Vertexing:

Reference pixels: 4T structure with 25✕25 m μpixels [48✕96].

Strixels: Reference style pixel with in column ADC [48✕96].

Calorimetry DECAL 25: 4 of these can be

ganged together to make a 50✕50 m pixel [96μ ✕192].

DECAL 50: 50✕50 m pixel μfor calorimetry [48✕96].

Reference 4T structures: similar to FORTIS.

These provide a baseline for us to test the integrity of the chip design, and investigate the different types of chip produced.

Cherwell Floorplan

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There are two sides to the chip: Vertexing:

Reference pixels: 4T structure with 25✕25 m μpixels [48✕96].

Strixels: Reference style pixel with in column ADC [48✕96].

Calorimetry DECAL 25: 4 of these can be

ganged together to make a 50✕50 m pixel [96μ ✕192].

DECAL 50: 50✕50 m pixel μfor calorimetry [48✕96].

Strixels.

Similar to the reference pixel array, however there is an in column 12 bit ADC.

Aims:• Increase fill factor for a sensor.• dE/dx measurement for rudimentary PID.• Reduce need for ancillary electronics.

Cherwell Floorplan

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There are two sides to the chip: Vertexing:

Reference pixels: 4T structure with 25✕25 m μpixels [48✕96].

Strixels: Reference style pixel with in column ADC [48✕96].

Calorimetry DECAL 25: 4 of these can be

ganged together to make a 50✕50 m pixel [96μ ✕192].

DECAL 50: 50✕50 m pixel μfor calorimetry [48✕96].

DECAL 25

4T pixel variant for calorimetry studies

Potentially of interest for Higgs factory digital calorimetry. We are concentrating our efforts on understanding the reference and strixel part of the chip first.

Cherwell Floorplan

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There are two sides to the chip: Vertexing:

Reference pixels: 4T structure with 25✕25 m μpixels [48✕96].

Strixels: Reference style pixel with in column ADC [48✕96].

Calorimetry DECAL 25: 4 of these can be

ganged together to make a 50✕50 m pixel [96μ ✕192].

DECAL 50: 50✕50 m pixel μfor calorimetry [48✕96].

DECAL 50

4T pixel variant for calorimetry studies

Potentially of interest for Higgs factory digital calorimetry. We are concentrating our efforts on understanding the reference and strixel part of the chip first.

Maximising the fill factor

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The efficiency of a detector is dependent on how much of the surface area is occupied by dead space.

Core part of the design of Cherwell is to use islands of electronics within the pixel array – avoid having dead regions at the edge of a sensor to maximise sensitive area.

4T

SELECT

CO

L

RESET

CO

L

CO

L

1xSRAM

BIAS

CO

L

CO

L

CO

L

4T

4T

4T

4T

4T

4T

4T

4T

The Cherwell Chip

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This seminar will mostly

concentrate on tests of the

reference pixel part of

Cherwell.

Characterisation work

Results on the reference and strixel parts of Cherwell

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Basic readout set-up

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Use a PC to drive a source (LED/laser/radiation source) to illuminate sensor.

Same PC drives DAQ via custom USB interface that talks directly to main board that chip is mounted on.

Characterisation work

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Basic understanding of the chips has been achieved over the past 6 months. Pedestals, noise, gain of pixels Temperature response over a nominal range [-50, +50] °C

Pedestal Value (ADC counts)

Photon Transfer Curve results (PTC)

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Noise and Gain characterisation

• PTC performed using IR illumination

• Results show good uniformity across the pixels

• Gain ≈ 0.17 ADC/e

• Noise ≈ 12e rms• Linear full well ≈ 11500e• Maximum full well ≈ 14700e

Log(Signal)

Log

(Nois

e2)

Signal

Nois

e2

Characterisation work

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Noise and gain are uniform across the sensor Average noise value ~12 e RMS Average gain value 0.17 => 51 V/e𝜇

Noise from each pixel

RMS Noise(e)

Gain from each pixel

Gain(ADCs/e)

Source tests

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Work is on going to fully understand the response of these devices to radiation sources: 55Fe spectrum endpoint has a sharp cut-off at about 150. Consistent with expectations from the PTC characteristics of

devices. Good S/N up to 150. No Kα or Kβ observed,

we think this is understood given the geometry of the pixel

Temperature variation

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Performance of the pixels changes as a function of temperature: Want to understand how things vary over a sufficient range

for a viable system: T = [-50, +50] °C.

Onset of thermal excitation swamping signal at about 50°C.

Any fast systems would need to be maintained below this temperature in order to ensure reliable operation.

Have done some preliminary thermal studies using water cooling mock-ups to explore system integration.

High Res Epi LayerExpected behavior up to ~50°CAbove that – noise escalates

Good operating rangeTherm

al ru

naw

ay

Test beam

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Test beam November 2012

T4 beamline at H6 at CERN 1 week of beam timeπ + a few days of parasitic

data taking. Aim: understand

resolution, charge sharing, and efficiency of Cherwell.

p ~ 120 GeV/cΔp/p ~1.5%

Test beam

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Analysis is ongoing ... more results to come So far we have pedestal corrections implemented,

correcting for common mode noise.

Work is on going with regard to tracking, and clustering – but we can clearly see correlations between hits in different planes of the stack. alignment constants are stable, indications are that the efficiency

is high for these devices, but work needs to be finalised.

Planning further test-beam runs at DESY this year. Aim: start testing DECAL side of the chip.

Correlation plot between rows in adjacent sensors.

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Implemented an SVD based tracking algorithm. Working on computing hit resolution and efficiency.

Applications

A few potential uses for this technology (there are many)

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Vertexing: Fast, precision, low mass detection of charged particles in the

vicinity of the interaction region of a detector. Can be used with one or more layers. X0 is dominated by two things:

Thickness of silicon: can back-thin sensors to ~20 m giving a very μlow mass system

Speed of readout: fast readout requires active cooling and adds mass Projects pursuing this technology:

SuperB: Particle physics experiment at the Cabibbo Lab in Italy. Searching for new physics at the intensity frontier.

ALICE: Nuclear Physics experiment at the LHC. Searching for a deeper understanding of matter at the energy frontier.

e.g. See Bevan et al., NIMA 643 (2011), pp. 29-35

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Vertexing: Fast, precision, low mass detection of charged particles in the

vicinity of the interaction region of a detector. Can be used with one or more layers. X0 is dominated by two things:

Thickness of silicon: can back-thin sensors to ~20 m giving a very μlow mass system

Speed of readout: fast readout requires active cooling and adds mass Projects pursuing this technology:

SuperB: Particle physics experiment at the Cabibbo Lab in Italy. Searching for new physics at the intensity frontier.

ALICE: Nuclear Physics experiment at the LHC. Searching for a deeper understanding of matter at the energy frontier. Next generation chip design based on ALICE tracker upgrade.

e.g. See Bevan et al., NIMA 643 (2011), pp. 29-35

τ-C ???

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Calorimetry High granularity large area detector for particle flow

reconstruction and identification algorithms: Use the shower shape to distinguish between particle species

based on how they interact in the calorimeter e.g. pixel-W sandwich based calorimeter concept: CALICE (Higgs

Factory/CLIC) Variant of a standard CMOS process makes this technology cheap

enough to be of interest for such applications.

e.g. See J A Ballin et al 2011 JINST 6 P05009

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Other uses Characterisation of these devices over a range of

temperatures is driven by a desire to understand: the maximum operating temperature of a functional device. how devices work over a "normal" range of actively cooled

temperatures. how they work in a regime of interest for ground based astronomy

(here you want to cool sufficiently to be able to eliminate IR background from your detector: need to operate at LN2 temperatures).

Also of interest to T2K Re: LAr calorimetry. how low can you go?

These issues are all related to building a "system".

Work in progress

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Temperature characterisation is being performed systematically for several variants of the device: In addition to preliminary results shown, we are preparing

our infrastructure to use a low temperature cryostat.

Preparing to test performance of chips, mounted on a 40pin DIL socket, down to a few K later this year.

Study charge carrier freeze out, and understand operation in high B fields using this (up to 7T).

Goal: Understand limits of the technology for future design work, and develop generic infrastructure for future testing.

CMOS Image Sensor for the ALICE ITS

Work in progress

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Basic concept.

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To subdivide the full array into smaller sub-arrays, the size to be defined

in order to match specifications, in particular in terms of speed and

power.

Column circuitry

Front end (see later)

The pixel • Front-end based on ‘imaging’ pixels

• Column-circuitry: ‘end-of-column’ circuitry,

folded back into the columns by using deep P-

islands

• Similar concepts under test in the Cherwell

sensor designed for Arachnid.

36

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Building the array

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Column circuitr

y

Front end

The pixel

The strixel The sub-array

or

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Pixel schematic

SEL

RST1

VRST1

Ibias0 Vbias0

OUTWRITE

250 fF38

Based on the schematic

shown here, and

presented in 2009. See

http://www.imagesensors.org/Past%20W

orkshops/2009%20Workshop/2009%20P

apers/066_paper_turchetta_ral_reset_no

ise.pdf

This pixel allow CDS, but

not snapshot.

Pixel studied in depth.

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Timing

SELRST

VRST

OUTWRITE

SEL

WRITE

RST

Integration Sample Reset

Sample

Signal

Reset pixel

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PTC

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Log-log plot

Linearity

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Per pixel noise

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Gain 33 µV/e-Full well 18,000 e-Dynamic range 2,900or 69.5 dB

42 Pixel optimisation for Alice-ITS

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Based on the previous experimental results, we optimised the pixel for

the Alice application. Results below based on a 128-pixel strixel and for

different timings (trade-off between noise and power)

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Strixel circuitry

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+

-

OUT_S

OUT_R

ROW COUNTER

CK

Memory 1

Memory 2

Counter status

Counter status

bus

State machin

eDigita

l outpu

t

Counter status

bus

Row decode

r

In the strixel

Each strixel will be independently working in rolling shutter mode.Hits recorded in strixel memories. Two memories should be enough based on occupancy.

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Dies

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SensorsTwo dies with 256 strixelsEach strixel with 128 pixels

Readout architectureLVDS chip (with PLL) already prototyped (back from fab Feb 2013)LVDS speed: minimum target 500 Mbit/sec (simulated up to 800Mbit/sec)

SubmissionChip submission should occur any day now.Expect to be testing this device summer/autumn 2013.

Outlook

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Cherwell is functioning well Bench-test characterisation yielded interesting initial results so far.

First results from test beam are promising Reference/Strixel parts of the chip

Basic operational requirements are understood plan to continue exploring these aspects.

DECAL needs more investigation planning a test beam at DESY to study this half of the chip.

One step closer to being able to build a fully integrated INMAPS based detector system.

To Do

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Test beam analysis is ongoing: Aim to get efficiency and a better understanding of clustering. Requires tracking software refinement.

Bench-top characterisation: Laser hit maps to study uniformity of response across pixels.

Radiation hardness The pinned photodiode is suspected to be radiation soft, want to investigate

this device in more detail. Further our understanding of the operational envelope:

crucial if we want to be able to map out a wider range of possible applications for devices based on this technology.

Continuing to develop infrastructure to this end. Chip design:

Expect a new chip submission this week for a next generation device for vertexing (ALICE Tracker prototype).

ALICE Specs (1)

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ALICE Specs (2)

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