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I SMALL SCALE DISCHARGE STUDIES
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-
"---* X^st/TQradiation on the partial pressures of Ar, Xe, and
F-y. In
d the two and t and 1. + 1.5
•e XeF was produced by a high energy e-beam.
2 &**(+)£
Cc/W
X 1( hing rates by Ar to be 8 Xe quenches XeF* with"a/three
body
d body was mainly argon.
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REPORT SUMMARY
In this report we report on the investigations of e-beam
controlled
discharge of the XeF laser discharge. As in the case of KrF we
find that
electron impact excitation and ionization of the rare gas
metastables play
a dominant role in the discharge physics. We have also
thoroughly investi-
gated the formation and quenching kinetics of XeF in e-beam
pumped laser
+ + mixtures. From our data we conclude that both Xe and Xe_
recombine
with F to form XeF . The two and three body quenching rate
constants of
XeF by Ar and Xe have also been measured.
•1
-
...MJ^M'-I k«u.JiM,iufii»i)i.iJM((lji| | jj|i •pill
,H,I«."»HHVI«"J«II {Wl!ß •HB,W,»III> .mnw„LP,i,.i n ii i
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fci
i|H
-
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TABLE OF CONTENTS
Section
I.
II.
Report Summary
List of Illustrations
DISCHARGE MODELING OF THE XeF* LASER
A. Introduction
B. Simplified XeF Kinetics
C. Discharge Physics
D. Conclusions
FORMATION AND QUENCHING OF XeF*
A. Introduction
B. Experimental Apparatus
C. Analysis of Data
D. Results and Conclusions
REFERENCES
Appendix
A ELECTRON-BEAM-CONTROLLED DISCHARGE PUMPING OF THE XeF
LASER
REFERENCES
Page
1
5
7
7
8
10
17
19
19
19
20
24
31
A-l
A-13
-
H
ft
••pmwwiwi»! ;"UWW.»'".'-'..».u-mwin »"»»,!,.... UP nwwn.,.,
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'I »*» <
•f.J
l^-c
-
lll.UMHWIIIW.».«!.-,',."""-
LIST OF ILLUSTRATIONS
Figure Fage
* 1 Electron-Impact Cross Sections of Cesium (Xe ) 11 and Xenon
as Functions of Electron Energy
2 Percentage of Discharge Energy into Xe as a 12 Function of
Fractional Xe* Population for Vari- ous Electric Fields
3 Ionization Rate as a Function of Fractional Xe 13
Population
4 Average Electron Energy as a Function of Fractional 14 Xe*
Population
5 Measured and Predicted Fluorescence for Pure 16 E-Beam
Pumping
6 Measured and Predicted Fluorescence When Capacitor 18 is
Charged to 8 kV
7 Typical Experimental Data 25
8 The Open Circles are the Experimental Measure- 26 ments of the
XeF* Radiation Detected by a Photodiode
9 The Open Circles are the Data Shown in Figure 8 27 Reduced to
Eq. (14)
A-l Oscillograms Showing Temporal Variation of E-Beam A-5
Current, Discharge Voltage, Discharge Current, and Laser Pulse
A-2 Spontaneous Emission and Laser Spectra of XeF A-6
-
•
..';
w
$
i i Jim..... i ii .1 H, i„ iij.ii|.uiin.i|.ipi,,i, ,..„•.
,,,,mr
i
fy
• » •
-
TJPW UU»PM **;«*—
I. DISCHARGE MODELING OF THE XeF LASER
A. INTRODUCTION
Laser action in XeF was first achieved at AERL by pure
e-beam
pumping.* Subsequently Burnham et al. at NRL and Sutton et al.
"at
Aerospace obtained laser action by UV preionization, avalanche
discharge
pumping. More recently we have obtained 40 mj of laser energy in
an (4)
e-beam ionized, avalanche discharge. We have also investigated
in d( -
tail the discharge physics of the XeF laser containing ~ 99. 5%
Ar, 0. 4% ie
and 0.1 - 0.2% NFj.
The physics of rare gas/halogen discharges is dominated by
the
excited species when the fractional population of the rare gas
metastables
-9 (5) exceeds 10 . ' For example, an important process in XeF
laser dis-
charges is the excitation of low lying metastables to higher
lying states.
This process can strongly influence the secondary electron
energy distri-
bution and therefore the efficiency of producing the metastables
(which re-
act with NF, to form XeF -- the upper laser level). The dominant
ioniza-
tion mechanism in XeF laser discharges is ionization of the
xenon and arj»on
metastables, i. e. , two-step ionization. For this discharge,
metastable
7-1 ionization rates of 1-5 x 10 sec are typical so that this
process strongly
(1) CA. Brau and J. J. Ewing, Appl. Phys. Lett. 27, 435
(1975).
(2) R. Burnham, D. Harris and N. Djeu, Appl. Phys. Lett. 28, 86
(1976).
(3) D.C. Sutton, S.N. Suchard, O.L. GibbandC.P. Wange, Appl.
Phys. Lett. 28, 522 (1976).
(4) J.A. Mangano, J. H. Jacob and J.B. Dodge, Appl. Phys. Lett.,
October 1, 1976.
(5) J.H. Jacob and J. A. Mangano, Appl. Phys. Lett. 28,
724(1976).
-
•I^BWUWM. IJl, H^,WW> ""«WM III ••»•!• IIIJIlilMII •••• , ,il
I.
influences discharge stability. These important excited state
processes
will be described in more detail subsequently.
B. SIMPLIFIED XeF KINETICS
In this section the dominant kinetics of the XeF laser discharge
will
be discussed. The high energy electrons e ionize the mixture
forming
mainly argon ions
«T + Ar -* Ar + «T + e. (1)
The secondarly electrons e are rapidly lost by attachment to NF,
to form
the negative halogen ion
eg + NF3 - NF2 + F" (2)
The secondary electrons gain energy in the applied electric
field and most
of the discharge energy initially goes into producing argon
metastable Ar
e + Ar -*• Ar + e s s (3)
There are three principal reactions by which the argon
metastables are lost
Ar* + Xe -* Xe** + Ar (4)
•Ui i,;
Ar + 2Ar -» Ar, + Ar
Ar* + NF3 - ArF* + NF2
(5)
(6)
The rate constant for reaction (4) has been measured to be 1.8 x
10
and 3 x 10" cm /sec for Ar ( P_) and ar ( PQ) respectively.
Reaction
-10
-32 6 3 (5) has a three-body rate constant of 1.7 x 10" om /sec
for Ar ( P.),
0.9 x 10'3Z cm6/sec for Ar (*P ) and 1.6 x 10-32 cm6/sec for Ar
(3P2). (7)
(6) L.G. Piper, J.E. Velazco and D. W. Setser, J. Chem. Phys.
59, 3323 (1973).
(7) M. Bourene, O. Dutnuit and J. LeCalve, J. Chem. Phys. 6_3,
1668(1975).
MUM
-
i.iii.mpm.j'wiu'i'M.i ii., .1 iii^wnmB^»p„i,mi,»in.innuiii!. .if
IM JI .•i.ntw .in iwnummpqiaiun III ...,_,.,.„,,. _ . » ,.
.......... i .,• i, |
Assuming a gas kinetic mixing rate of these states by electrons,
the loss
rates of Ar by reactions (4) and (5) will be only marginally
affected. So -10 3 - 32 we will assume a mean rate of 2 x 10" cm
/sec for reaction (4) and 10"
cm /sec for reaction (5). The argon metastables react with NF.,
to form
• -103(8) ArF' with a rate constant of 1.4 x 10" cm /sec. The
branching ratio
for this reaction is yet to be determined. Extrapolating from
reactions of
Xe ' and Kr' with NF,' one might conclude that reaction (6) has
a branch-
ing ratio of about 0. 5. At a mixture pressure of four
atmospheres with 0.4% 7
Xe and 0. 1% NF3, the rates for reactions (4), (5) and (6) are
8x10,
7 7-1 * 2. 5 x 10 and 1.4 x 10 sec . So about 15% of the Ar is
channeled into * * *
ArF . Most of the energy in ArF will produce XeF by the
following re-
action
ArF* + Xe - XeF* + Ar (7)
The remainder of the energy is presumably radiated on the ArF
bands.
-9 3 / As reaction (7) proceeds with a rate constant ~ 10
-
•••»• "•^••'•wt.u».uiiiiiw>mi.uii,i
-
»^•.^wwwmmwpiwswu ii uiii
100
^30
O CtL
ü 20 UJ -1 LÜ
10
0
04854
6s— 6p OF Cs(Xe*)
Xe 5p—6$
IONIZATION Cs(Xe )
Xe IONIZATION
20 30 40 50 ELECTRON ENERGY (eV)
60
Figure 1 Electron-Impact Cross Sections of Cesium (Xe ) and
Xenon as Functions of Electron Energy
11
pi
-
til4IM.W*—. JJI>»»J ,1 JP. .11 II . I U U-.U U|IUI|PI|lii
"'"»•• — -—»*-^p»WP»l
120
u. O
10
6 4883
i—i—r T—i—r
KV/cm - otm
-4 10 ' 10
XeV[Ar + Xe]
T—i—r
J l__L 10
> t
M
Figure 2 Percentage of Discharge Energy into Xe as a Function of
Fractional Xe* Population for Various Electric Fields
-12-
r->
-
• wm•^wm^*j*,,«M.K*wUnH.mAll . .1 ^Mmymmw^mmm
10*
u «A
ÜJ
§I08
s
107
1 1 1 1 1 1 1 1 ' 1 1 111 - -6KV/cm-otm
- *5
••—
*4
*3 —
- v'Vy ̂ \^^
^ 2
1 1 1 1 1 1 1 1 1 1 1 III 10 -5
64851
10"* 10
Xe*/[Xe*Ar]
-3 KT
Figure 3 Ionization Rate ae a Function of Fractional Xe
Population
13
-
j»4iam|Wgjqpi| "•W"! .»'-•"• - I.U.M ,,..... • awf! ijl.
WWiijlva • i • iwji"
-
»i Mini .w.m«i.un»,liunuii u.i '• »n .mi I»I, inumim i i . j n
nun .lw,Mn^w,ii,n IWiiJJMP JHMWWPPPIWII.' '•" u. .»^
^
Xe as a function of the fractional metastable population Xe /(Kr
+ Ar)
for electric fields of 2-6 kv/cm arm. It is apparent from Figure
2 that
the efficiency of producing the metastables is a strong function
of the Xe
population. For example, the efficiency of forming Xe is almost
45% when
the fractional population is 10" and the electric field is 2
kV/cm atm. This
efficiency decreases to less than 10% when the fractional
population is in-
-4 creased to 10 . The decrease in efficiency can be made up by
increasing
the electric field. Figure 3 shows the ionization rate as a
function of the
fractional metastable population. Figure 4 is a plot of the
average electron
energy as a function of the fractional metastable population.
Notice that
the electrons cool as the metastable population increases. The
cooling
effect is much stronger at smaller electric fields.
Using the rate constants predicted by the Boltzmann code, we
have
developed a self-consistent kinetics code that follows the
temporal evolu-
tion of the secondary electrons, positive and negative ions, Ar
, Ar«, Xe^
and XeF . We couple our kinetics code to a simultaneous set of
differential
equations that describe the electrical circuit. The outputs of
this code in-
clude the temporal evolution of the discharge current and
voltage and the *
XeF fluorescence for a given preionization level, capacitor
charge voltage
and gas mixture.
The predictions of this discharge model have been compared
with
our XeF laser discharge experiments. The top trace in Figure 5
is the
e-beam current in the discharge cavity. The lower trace is the
fluores-
cence as observed by a photomultiplier after the signal passes
through a
l/4 meter Jarrel Ash monochromator tuned to 3520 A. The cavity
was
filled with a 1 atm mix oi 99. 4% Ar, 0. 4% Xe and 0. 2% HVy The
dashed
15
< •»
-
•i.i. i »m» i-i • i" vw.T'-JI i n 11, i,tmu0jm*sm!mmi*
FLUORESCENCE CALIBRATION
PREOICTEO MEASURED
0 100 200 300 G485IX TIME (ns)
E-BEAM CURRENT 30A/DIV
FLUORESCENCE AT 3520 Ä
400
Figure 5 Measured and Predicted Fluorescence for Pure E-Beam
Pumping. The discharge cavity contained 99. 4% Ar, 0. 4% Xe and
0.2% NFj.
16
MMM
-
• ilWWK*.mm**miv•n^•wrir-±'.V!«>v^'"*-U'*>'!>vi*VA
»,..:'W!P"H»VIJ»'"»IIJI W»[.. " HW»"« ,».»"•*•'• **" -u.| •».»•»..
»uiuj jj«.,i imm m i. in i.ni.m JTH.^^^^-"• »•' '"•,"'""'
trace is the prediction of the code. The amplitude of this
predicted trace
is adjusted to closely match the measured fluorescence. This
amplitude
normalization was necessary as we did not have an absolute
calibration on
the fluorescence emanating from the discharge. For subsequent
compari-
sons between experiment and theory no further adjustments were
made.
Once the XeF fluorescence amplitude was normalized, we mea-
*
sured the magnitude and efficiency of discharge produced XeF
fluorescence
enhancement. Figure 6 shows the experimental results and
theoretical pre-
dictions when the 0.3 pF capacitor is charged to 8 kV. The top
trace is the
discharge voltage. The second trace is the discharge current.
The third
trace is the XeF fluorescence. By the end of the pulse the
enhancement
in the fluorescence is 2. 5. The metastables are being produced
with the
same efficiency as by pure e-beam pumping. Note that the
predicted
fluorescence is 30% higher than the measured fluorescence. The
reduced
measured fluorescence can be explained if the branching ratio
from Xe
(see reaction (4)) is 0. 7. Further, to predict the current in
the discharge
-10 3 we have used a rate constant for reaction (4) of 4 x 10 cm
/sec. If a
slower rate constant is used the predicted discharge current
does not reach
a steady state value.
D. CONCLUSIONS
In conclusion, our discharge model predicts that rare gas
metasta-
bles can be produced with high efficiency (60%) as long as the
fractional _5
metastable population is kept sufficiently small (< 2-3 x 10
). We have
also inferred that Xe reacts with NF, to produce XeF with a
branching
-10 3 ratio of 0.7. The rate constant for this reaction is 4 x
10 cm /sec.
17
m H
-
*. J'WJIIIFilw^Al^i.y.VlRifflPtfP/^w.- lJ) .IllilW.ll JMPi
H.II.I.
SO
25 PREDICTED MEASURED
X _L -L
ELECTRIC FIELD 2.1 kV/cm/DIV
DISCHARGE CURRENT 200 A/DIV
5 A/cmZ/DIV
FLUORESCENCE AT 3520 Ä
EFFICIENCY
0 100 200 300 400
G4852X TIME (ns)
Figure 6 Measured and Predicted Fluorescence When Capacitor is
Charged to 8 kV
18
-
""• u"^m . ii ,. MI Hi.»» . »I..,., iJIIU)I ,„„,,„.,.„
M
y
II. FORMATION AND QUENCHING OF XeF
A. INTRODUCTION
* (1-5) Efficient scaling of the XeF laser' to high average
power re-
quires knowledge of the processes responsible for th( formation
and quench-
ing of the upper laser level. From the formation kinetics one
can determine
the upper state production efficiency. The quenching kinetics
enables one to
choose the appropriate mix and determine the laser saturation
flux. ' For
efficient laser power extraction the cavity flux should be much
greater than
the saturation flux. In this section we report on measurements
of the quench-
ing rates of XeF by Ar and Xe. These rates were obtained by
analyzing the *
dependence of XeF fluorescence intensity on the pan.ial
pressures of Ar, Xe
and F?. We have determined the rate constants for tiie following
process es:
XeF"* + Ar -* 8 + 4x 10'13 cm3/sec
XeF* + Ar + M^ 1.5 ± 0.5 x 10"32 c -n6/sec
XeF* + Xe + M - 3 + 1.5x 10"31 cm('/sec
The third body M was mainly argon.
B. EXPERIMENTAL APPARATUS
Argon, xenon and fluorine were premixed and excited by a high
energy
e-beam. The resulting XeF fluorescence amplitude was measured by
a
photodiode via a 5 nm bandpass filter centered at 352 nm. To
ensure that
the emission was representative of the overall kinetic
processes, we re-
peated the experiments with a 50 nm bandpass filter. This
changed the
(9) W.W. Rigrod, J. Appl. Phys. 36, 2487 (1965).
19
•i . ,,.
-
L».........L.. |l.l|,i|jy ..«.„.„. u ,1,1, L,,»,,,!,,,,,,,,,^
»•'"PJJi.mn i. •• i
•""*
-1 • •
•3
amplitude of the photodiode signal by a constant factor over the
whole pres-
sure range of interest. Hence we concluded that the attenuation
of XeF
(B 2, t7 -* X 2, /?) radiation observed through the 5 nm
bandpass filter
was constant when the mixture pressure was varied. The mixtures
used
contained mainly Ar, 7.6 torr F-, and varing amounts of Xe (from
7.6
torr to 150 torr). For a given run however we kept the xenon
concentration
fixed and increased the argon partial pressure from 0. 5
atmospheres up to /g \
4 atmospheres because at lower pressures the spectra changed
radically
This change is possibly due to the lack of collisional
relaxation of the mani-
fold of upper states at low gas pressures.
Research grade (Matheson) Ar and Xe were used without any
further
purification. The gases were analyzed by Gollob Analytical
Service, Inc. ,
and found to have less than 100 ppm of O,, N^, H20 and CO,
impurities.
The F? was 98% pure. The electron gun apparatus used in these
experi- (4)
ments has been described previously. This device produces an
electron
beam with an energy of 150 keV and a current density of 0. 2 - 5
A/cm for
300 nsec. The cross sectional dimensions of the e-beam were 2 cm
x 22 cm.
The beam interacted with the mixture in a teflon cell 0. 5 cm
deep in the beam
direction; this short dimension insured a linear increase in the
energy deposi-
tion with pressure for pressures up to 4 atmospheres.
C. ANALYSIS OF DATA
Table 1 lists the dominant formation kinetics. The high energy
elec-
trons deposit their energy into F_, Xe and Ar in a ratio roughly
proportional m
to their mass densities. One important question in analyzing the
experimen-
tal data is to decide the major kinetic pathways of the positive
ions Ar and
Xe . Reaction (12) gives a formation rate for ArF that is
proportional to
20
-
-
...
14
•%1
iwBwwBBa^,^,.,,,,,,,,^!,,,,^,^,^
TABLE 1. DOMINANT FORMATION REACTIONS
+ Ar + + He + ArT - , Xe+ + e + es
e + F, + -F +F 8 c.
Ar+ + F" + M - ArF* + M
Ar+ + Ar + M •* Ar- + M
Ar2 + F -* ArF' + Ar
ArF* + Xe - XeF* + Ar
Xe+ + F" + M - XeF* + M
Xe+ + Xe + M - Xe2+ + M
Xe2+ + F" + - XeF* + Xe
(10)
(11)
(12)
(13)
(14)
(15)
(16)
(17)
(18)
!
21
xA - • •
-
•'•• -"H^JWHW UVwm-^mm,
[F~] [Ar ] . Since [F~] — [Ar ] ~ \fl~T (I . = e-beam current)
one expects
that ArF^ formation and hence XeF (via reaction (15) by this
path to be pro-
portional to I . . Similarly reaction (l6) gives a production
rate of XeF *
linearly proportional to I . . The data showed XeF fluorescence
to vary 2 2 linearly with e-beam current from 0. 2 A/cm to 5 A/cm
for the full range
of mixtures and pressures used, which is thus consistent with
the foregoing
discussion. It is also known, however, that reaction (13) and
(17) are signif-
icant sinks for Ar and Xe , especially at the higher pressures.
Only by
hypothesizing reactions (14) and (18) can we maintain a total
mechanism of
ion chemistry which leaves XeF , and hence its fluorescence,
linearly pro- * *
portional to I ,. Thus alternate species such as Ar .F and Xe_F
cannot
be major products of reactions (14) and (18).
Once XeF is formed, it can radiate (with spontaneous lifetime
of
16 nsec)' or be quenched by F?, Xe or Ar. Recently Brashears,
Set ser
.(12) and DesMarteau have measured the quenching rate constants
of XeF by
F7 and Xe and found them to be 3. 3 x 10" cm /set-, and 2.9 x 10
cm /
sec respectively. All processes involved reach a s'-.eady state
on a time
scale much less than the 300 nsec e-beam pulse. So the
photodiode signal
can be written as
(10) A. Hawryluk, J.A. Mangano and J. H. Jacob, 3rd Summer
Colloquium on Electronic Transition Lasers, Sept. 7-10(1976). D.C.
Lorents, R.M. Hill, D.L. Huestis, M.V. McCusker and N. H. Nakano,
ibid.
(11) G.J. Eden and S.K. Searles, 3rd Summer Colloquium on
Electronic Transition Lasers, Sept. 7-10 (1976).
(12) H. C. Brashears, Jr., D.W. Setser and D. DesMarteau
(unpublished). These experiments were performed by
photodissociating XeF£ in a cell capable of going to one
atmosphere.
22
-
p-T-«»' A. II '«'••"• ' •'" " " '
ft
a + aA PAr
y + ^F2 PF2
+ ?Xe PXe + ^ArPAr + 6Xe PXe P + öAr PAr P (19)
where P„ , PA and PY are the pressures of F7, Ar and Xe
respectively. F~ Ar Xe £
P is the total pressure, a . is proportional to the efficiency
of generation of
XeF' from the e-beam energy deposited in the Ar. a is the
contribution to
the XeF' formation from the e-beam energy deposited in Xe. Both
a and
a . are constants for constant P„ and P . y is the inverse
spontaneous Ar Ac Ar
lifetime. £ , etc. , are the two body quenching rate constants
of F? etc. F2 L
6V and 6A are the three body quenching rate constants by argon
and xenon. .Xe A r
We have ignored the three body quenching by F2 because of the
low fluorine
concentrations used. For example, a three-body rate constant of
10 -30
cm /sec would lower the measured two body rate constant by Ar by
20%.
It is very difficult to obtain this rate constant because of the
rapid quench-
ing of XeF* by F2-(12)
For each experimental run the signal intensity was measured as
a
function of P. keeping P„ and PY constant. (A run consists of a
series Ar Xe
of experimental data for various values of P. .) Seven different
runs were
made for P„ = 7.6 u
fitted to a polynomial
made for Pv = 7.6 up to 152 torr. For each run the data so
obtained was y\e
S = Z A P * B n Ar
(20)
In Eq. (20) we have assumed P. = P. Typically it was found that
a 3rd Ar
• order polynomial adequately fitted the data. We are only
interested in the •
first two coefficients A~. and A given by m
A0 = a/t
23
(21)
-
iiJUII,H!|Pii,Hj, HIIIUIWII Jiinil.iui.i [,].. w u ,, „,,„ „ „
,,^
and
A - -^ Al " t •ft (22) We have abbreviated £ = (7 + | Pp + £ Xe
PXe>
and TJ = ?Ar+ 6Xe (12) P ). By using Brashears, Setser and
DesMarteau's resultsv for £; F
and £ v and assuming r|a/£a A «1 (this assumption, which allows
neglect-
ing the second term in Eq. (22) was verified aposteriori), a and
a . wore
then calculated for each run from (3) and (22).
We now define a quantity L (PA ) given by .Ar
L •
a + a A P. Ar Ar (23)
From Eq. (19)
L (P. ) = n P. + 6A PA v Ar' ' Ar "Ar Al 1 24)
By at least squares fit, of a quadratic in P. , to the
experimental values
of L (P. ), r\ and ÖÄ were evaluated for each run. By plotting
r\ vs I' , Ar Ar Äc
we obtained values for £ A and ö-y • Ar J\G
D. RESULTS AND CONCLUSIONS
Figure 7 shows the temporal variation of the e-beam current
and
XeF' fluorescence as detected by the photodiode. Figure 8 shows
a typical
curve of the measured photodiode signal as a function of Ar
pressure for the
special case of 22.8 torr Xe and 7.6 torr F_. Figure 9 shows a
reduction
of the data shown in Figure 8 to the form given by Eq. (24).
Also shown is
at least squares fit to the reduced data to obtain the value of
t| 6A . Finally
in Figure 8, Eq. (19) is plotted with the derived values of a. ,
£. , etc.
24
-
p»u-w«»twip«* «T"F*7?^^wiwr«^'^w«^g)nnapppi 1 •"-»—-«
.1
E-BEAM CURRENT
PHOTO DIODE SIGNAL
67752
-i—i—i—r
I I I I I I I I I
• • • J I I L
TIME IOOnsec/div
Figure 7 Typical Experimental Data. The top trace is the e-beam
current and the lower trace is the photodiode response.
< ( 25
-
..jiwmwwu-tllll .mijiHuuin,! i ijumiM.
250
50
0 6 «6 36
0.5 _l_ _L
1.0 1.5
Ar
2.0 2.5
(ATM)
3.0 3.5 4.0
•**
h~
-1
Figure 8 The Open Circles are the Experimental Measurements of
the XeF* Radiation Detected by a Photodiode. Each experimental
value shown above is the average of many data points. The signal
was through a 5 nm bandpass filter centered at 352 nm. The curve is
a plot of Eq. (19).
26
-
T„, J.1...I..IM, u, ii , •1.tijm.iiiwnii,tWiimiiiiWI,i i
i]ipiinj.ijiiii,mniilii,ti..n,
-22.8 TORR
Pp-»7.6 TORR
4.0
P. (ATM) Ar
.. <
Figure 9 The Open Circles are the Data Shown in Figure 8 Reduced
to Eq. (23). The curve is a least squares fit to a quadratic in
PAr,.
27
-
• ... ll.|.|iMnm.ill t»MUJIM'HHi.lw,]W)iilini HI HII,.IM.I„ i.i,
,|.,i „ mm
> >]
From these derived values we have also determined that for this
case
(T)Q)/(U ) «10 . The value of Ö. was obtained by averaging the
re-
suits of the many different runs performed. The large possible
errors in
the measured rates is because the loss of XeF by two and three
body
quenching are the same order of magnitude over our range of
experiments.
Using the quenching rates given above, one can compute the
satura-
tion flux (f> for an arbitrary mixture of Ar/Xe/F, from the
following ex-
(13) pressionv
- h,v "X [1 +
-1
(25)
+
-
•Ktr j»ü«j.11 .HImiij i iiiipi, n.i n.miHip, ii.iima j. ....«,
WW-
et al.' ' have determined that the NF, quenching rate of XeF is
16-17
times slower than F,. So $ for a mix containing NF, will be
somewhat
smaller than the value calculated above. Further, NF3 does not
absorb
at 350 nm.' ' In spite of these two considerations, the highest
laser effi-
ciencies obtained in XeF have been about 5%.* ' ' The maximum
ex-
f 181 pected efficiency is 17%.v ' A possible explanation for
the lower efficien-
cies obtained experimentally is photoabsorption due to charged
particles . |1D\ # * (20)
(for example F y ' and excited states (for example Xe , Ar ,
etc.).*
(17) S.R. LaPaglia and A.B.F. Duncan, J. Chem. Phys. 34,
1003(1961).
(18) The metastable production efficiency in e-beam pumped Ar is
about 55%. (See for example L. R. Peterson and J. E. Allen, J.
Chem. Phys. 56, 6068 (1972).) The maximum XeF* efficiency quoted is
just the product of the quantum efficiency and the Ar* production
efficiency.
(19) A. Mandl, Phys. Rev. A3, Z51 (1971).
(20) H. Hyman, AERL, private communication.
29
•
-
IVMIl. Uli BMIPIP«!jlw.kl 11 "»"W!>",-' i-F.iiiu",'». »>
r..f,,mnm ,11II,!,-...»«.. . 1JI .1 .J »«M' ""
REFERENCES
ft
1. CA. Brau and J. J. Ewing, Appl. Phys. Lett. 27, 435
(1975).
2. R. Burnham, D. Harris and N. Djeu, Appl. Phys. Lett. 28, 86
(1976).
3. D. C. Sutton, S.N. Suchard, O.L. GibbandC.P. Wang, Appl.
Phys. Lett. 28, 522 (1976).
4. J.A. Mangano, J. H. Jacob and J.B. Dodge, Appl. Phys. Lett.,
October 1, 1976.
5. J.H. Jacob and J.A. Mangano, Appl. Phys. Lett. 28,
724(1976).
6. L.G. Piper, J.E. Velazco and D. W. Setser, J. Chem. Phys. 59,
3323(1973).
7. M. Bourene, O. Dutnuit and J. LeCalve, J. Chem. Phys. 6_3,
166& (1975).
8. J.E. Velazco, J.H. KoltsandD.W. Setser, J. Chem. Phys. 65,
3468 (1976).
9. W.W. Rigrod, J. Appl. Phys. 36, 2487 (1965).
10. A. Hawryluk, J.A. Mangano and J. H. Jacob, 3rd Summer
Colloquium on Electronic Transition Lasers, Sept. 7-10 (1976). D.C.
Lorents, R. M. Hill, D.L. Huestis, M.V. McCusker and N. H. Nakano,
ibid.
11. G.J. Eden and S.K. Searles, 3rd Summer Colloquium on
Electronic Transition Lasers, Sept. 7-10(1976).
12. H.C. Brashears, Jr., D.W. Setser and D. DesMarteau
(unpublished). These experiments were performed by
photodissociating XeF2 in a cell capable of going to one
atmosphere.
13. Physically
-
""""f""•""•"•"*"——"^m|^^^^^^^^
•
-
,.,, , ,...,.jr—. - • ----- r~—rim liaJlinMpiiKl >« '• • '
r":-T" '—"-" •«•lilji
J I
i't
APPENDIX A
ELECTRON-BEAM-CONTROLLED DISCHARGE PUMPING OF THE XeF LASER
A-l
•n
-
"• •ijm.lWJmni. i.m..^.in„ ,,,.. ii>i.,
APPENDIX A
ELECTRON-BEAM-CONTROLLED DISCHARGE PUMPING OF THE XeF LASER
In the last year there has been considerable interest in
rare-gas
monohalide lasers. These lasers were first pumped by
high-energy
e-beams. The first discharge-pumped rare-gas monohalide
laser
was KrF . This was achieved with an e-beam-controlled
discharge.
Subsequently, lasing action has been obtained in both XeF and
KrF by
fast discharge techniques.' ' ' In this letter we wish to report
e-beam-
controlled discharge pumping of XeF .
(8 91 The KrF laser discharge has been investigated in some
detair '
and we expect the physics of the XeF discharge to be very
similar. Elec-
tron impact excitation and ionization of the rare-gas
metastables are im-
portant in determining the efficiency and stability of the XeF
laser discharge.
(1) S.K. Searles and C.A. Hart, Appl. Phys. Lett, 27,
243(1975).
(2) CA. Brau and J. J. Ewing, Appl. Phys. Lett. 27, 435
(1975).
(3) J.J. Ewing and CA. Brau, Appl. Phys. Lett. 27,
350(1975).
(4) E.R. Ault, R.S. Bradford, andM.L. Bhaumik, Appl. Phys. Lett.
27, 412 (1975).
(5) J.A. Mangano and J.H. Jacob, Appl. Phys. Lett. 27,
495(1975).
(6) R. Burnham, D. Harris, and N. Djeu, Appl. Phys. Lett. 28, 86
(1976).
(7) D.G. Sutton, S.H. Suchard, D.L. Gibb, andC.P. Wang, Appl.
Phy*. Lett. 28, 522 (1976).
(8) J.D. Daugherty, J.A. Mangano, and J.H. Jacob, Appl. Phys.
Lett. 28, 581 (1976).
(9) J.H. Jacob and J.A. Mangano, Appl. Phys. Lett. 28,
724(1976).
mmm
I A-3
> i
'""* ••- • i — ••-•1t.i -. —M
••••••"I—win i i i—i i—i—IWWI ip—woni-y • i ~~iB
-
I' .' • '1 '"I P " " "•"'•
However, it should be possible to have stable discharges in the
XeF laser
mixtures if we ensure that the Fy or NF, attachment rate is
equal to or (8) greater than twice the metastable ionization
rate.
The experimental apparatus used for the laser experiments has
buen
(5) described previously. y The cold cathode gun was modified to
provide a
high-energy electron current density of 1Z A/cm . Even with
these cur-
rent densities, no lasing action was observed when the capacitor
was un-
charged (e-beam only). The best lasing results were obtained
with mixtures
of 99. 5% Ar, 0.4% Xe, and 0. 1% NF, at a total pressure of 4
atm. Figure
A-l shows the temporal variation of the e-beam current,
discharge voltage
and current, and photodiode signal. The laser pulse energy of 10
mj was
measured by a Scientech calorimeter (model 360203) and by a
calibrated
photodiode. The mirrors used under these conditions were a 30%
output
coupler and a max (> 99%) reflector. Both mirrors had a
radius of curva-
ture of 1 m and were placed 100 cm apart. The discharge was
unstable
and arced about 80 nsec after the capacitor voltage was switched
across the
anode and cathode. The mean discharge current was 75 A/cm and
the mean
electric field was 11 kV/cm. The discharge energy into the
mixture was about
4. 9 J. The energy deposited by the high-energy e-beam was about
2. 1 J.
Hence the laser efficiency was only 0. 3%. In Figure A-2 the top
two traces
show the spontaneous emission spectra when the discharge
capacitor is un-
charged (e-beam only) and when the capacitor is charged to 30
kV. The
difference between the two spectra is the result of the
discharge arcing. The
bottom trace shows the XeF laser spectrum. Lasing action occurs
on two
lines which have been identified as radiation from primarily 0-3
and 1-4
bands (10) The laser and spontaneous emission are red degraded,
indicative
A-4
' ' : '"...£••"
-
" -• --—T' "— i'iwwmm*^» " "^
E-BEAM CURRENT
DISCHARGE VOLTAGE 8.4 kV/div
DISCHARGE CURRENT 1 kA/div
PHOTODIODE SIGNAL
TIME 100 ns/div
Figure A-l Oscillograms Showing Temporal Variation of E-Beam
Current, Discharge Voltage, Discharge Current, and Laser Pulse
• 1
. 1
•- 1 • i
1
A-5
^, — - •
-
• »«^.»^ l.ll,^ll.,.l» ,i »miij , ,.,..,. ,,.,|.,U. I..,
. -
y
1 I i i i i I i i i t I i i i—i | i—i—r—r
u
FLUORESCENCE (E-BEAMONLV)
-LASER (E-BEAM 0ISCHAR6EI
u ' I I ' I • I I I ' ' I I ' '—I I I I I I I t
355 350 345 340 WAVELENGTH (nm)
335
Figure A-2 Spontaneous Emission and Laser Spectra of XeF
A-6
•amMO 1
-
•*"• '^- - •"•• . -I..-.,.- .,...,,,, iiMIIII , ii innijum. I
"•"'•'
of the fact that the internuclear separation of the upper level
is larger than
the lower level.
Before discussing the reason for the observed efficiency, we
will
attempt to establish the kinetic chain that results in XeF . By
discharge
pumping the secondary electrons gain enough energy in the
applied electric
field to excite the rare-gas me ta stables. We have verified,
using the AERL
Boltzmann code, that for laser mixtures containing 99. 5% Ar and
0.4% Xe,
most of the discharge energy goes into producing the argon
metastables by
the following reaction
ed + Ar — Ar + e,. (A-l)
There are three prinicpal reactions by which the argon
metstables are lost
ArV + Xe - Xe* + Ar, (A-2)
Ar' + 2Ar -» Ar, + Ar,
Ar* + NF3 - ArF* + NF2-
(A-3)
(A-4)
The rate constant for reaction (A-2) has been measured to be
>2) and Ar (3PQ) 1.8 x 10"
10 and 3 x 10"10 cm3/sec for Ar (3P_) and Ar (3Pn),
respectively.*11
_ o o f. Reaction (A-3) has a three-body rate constant of 1.7 x
10" cm /sec for Ar
(3P1), 0.9 x 10"32 cm6/sec for Ar (1P1), and 1.6 x 10"
32 cm /sec for Ar
3 (12) ( P?). Assuming a gas kinetic mixing rate of these states
by electrons,
the loss rates of Ar by reactions (A-2) and (A-3) will be only
marginally
(10) Joel Tellingheusen, G.C. Tisone, J.M. Hoffman, and A.K.
Hays (unpublished).
(11) L.G. Piper, J.E. Velazco, and D.W. Setser, J. Chem. Phys.
59, 3323 (1973).
(12) M Bourene, O. Dutuit, and J. LeCalve, J. Chem. Phys. 63,
1668 (1975).
A-7
•Ml
-
•piiiswn«jwi.iii.i]lm»iiilii«,..,
affected. So we will assume a mean rate of 2 x 10 cm /sec for
reaction
(A-2) and 10" cm /sec for reaction (A-3). The argon metastables
react
with NF, to form ArF with a rate constant of 1.4 x 10" cm /sec.
'
The branching ratio for this reaction is yet to be determined.
Extrapola:ing
* * (12) from reactions of Xe and Kr with NF, one might conclude
that reaction
(A-3) has a branching ratio of about 0.5. At a mixture pressure
of 4 atm
with 0.4% Xe and 0. 1% NF3, the rates for reactions (A-2) -
(A-4) are
8 x 10 , 2. 5 x 10 , and 1.4 x 10 cm /sec. So about 15% of the
Ar is
* * channeled into ArF . It is possible that some of the energy
in ArF will
produce XeF by the following reaction:
ArF* + Xe - XeF* + Ar. A-5)
The remainder of the energy is presumably radiated on the ArF
bands.
Reaction (A-5) will have to proceed at a gas kinetic rate if 50%
of the ArF
is to be channeled into XeF
(14) The argon excimers will be deactivated at least as rapidlyv
by
Xe to form Xe , which means that 70-80% of the Ar_ will end up
as Xe .
The remainder of the Ar, will be radiated. So we can conclude
that the
argon metastables transfer their energy to the xenon metastables
with a
75% efficiency. The Xe thus formed will react with the NF, to
form XeF^
(12) with a unit branching ratio. The rate constant for this
reaction is
-11 3 * 9x10" cm /sec. Hence the Xe lifetime is 100 nsec. This
perhaps
explains why the laser power drops rapidly after the discharge
arcs, but
lasing continues at ever decreasing power for another 100 nsec.
(See
Figure A-l.) In the case of KrF and Br-, the laser action
terminated
(13) J.E. Velazco, J. H. Kolts, and D.W. Setser
(unpublished).
(14) According to D.W. Setser a rate constant in excess of the
gas kinetic rate is not likely.
A-8
-
I* •VI I Oil"'J* mi DIBWpilWll rim< in W'UJi i Hf»^
much more rapidly. ' ' This occurs because both F^ and Br^
quench
(1 2) the rare-gas metastables much more rapidly than NF^.
Perhaps half
of the Ar" that does not form Xe will result in XeF production.
So the
effective branching ratio for producing XeF from Ar is between
0.75 and
0.9.
When the NF, is replaced by F,, 50% of the argon metastables
are
channeled into ArF . This is because the reaction that is
equivalent to
(A-4), i.e. ,
Ar + F2 — ArF + F,
.(12)
(A-6)
proceeds at a 7-8 times faster ratev ' and probably has a higher
branching
ratio. If the lifetime of ArF is the same as KrF («10 nsec),
then even
if the rate for reaction (A-5) were gas kinetic, only about 50%
of the energy
in ArF would result in XeF . So the effective branching ratio
with F2 is
0. 5-0.75. With F, mixtures we have observed that the
fluorescence is
smaller by about a factor of 5. This reduced fluorescence cannot
be ex-
plained by the above kinetics. It is possible that F,
deactivates XeF with
a rate constant of 5 x 10" cm /sec. If the radiative lifetime of
XeF' is
in fact 50 nsec,' ' ' and assuming that the deactivation of XeF
is
negligible, the relative decreased fluorescence can then be
understood.
A laser efficiency of 0. 3% was obtained with 0. 1% NF3, 0.4%
Xe,
99. 5% Ar mix at 4 atm. From the fluorescence enhancement when
the
discharge was applied (over that achieved with the e-beam alone)
we esti-
mate the efficiency of producing argon metastables to be about
25%. Using
the estimated branching ratio of 0. 8 and a quantum efficiency
of 35%, we
estimate that the production efficiency for XeF is 7% which is
still about
(15) J.J. Ewing, J.H. Jacob, J.A. Mangano, and H. Brown, Appl.
Phys. Lett. 28, 656 (1976).
(16) CA. Brau and J.J. Ewing (unpublished).
A-9
-
•" -" •woiwrap
?!
...-...., .IWIJ1.I I. I .,»T. I |:lu,.WW, , i j,
Jwuil.,!,,.!,!,.,,,^.
1 1
: •
" 1 1
20 times larger than the observed laser efficiency. There are
two possible
reasons for the difference between the production efficiency and
laser
efficiency. First the cavity flux could have been a factor of 10
or so srru Her
than the saturation flux , which can be expressed as
*8 =
-
i.i« -» m.j in. ,.••.-
'" "•"' '""" ""^
. *
,1
.• .1
31
ii
In conclusion, the most likely mechanism responsible for the
observed
efficiency in XeF is quenching of XeF by heavy bodies such as Xe
or Ar.
If so, the efficiency can be increased by increasing the laser
cavity flux.
The authors wish to thank J.D. Daugherty and D.W. Setser for
many
useful discussions during the course of this work.
A-ll
V"jfl
-
."I
« •
frecedwf %* Ä^J • I |1"IMIH». Wi-ht«.*
APPENDIX A
REFERENCES
1. S.K. Searles and C.A. Hart, Appl. Phys. Lett. 27,
243(1975).
2. CA. Brau and J. J. Ewing, Appl. Phys. Lett. 27, 435
(1975).
3. J.J. Ewing and CA. Brau, Appl. Phys. Lett. 27, 350(1975).
4. E.R. Ault, R.S. Bradford, and M. L. Bhaumik, Appl. Phys.
Lett- 27, 412 (1975).
5. J.A. Mangano and J. H. Jacob, Appl. Phys. Lett. 27,
495(1975).
6. R. Burnham, D. Harris, and N. Djeu, Appl. Phys. Lett. 28, 86
(1976).
7. D.G. Sutton, S.H. Suchard, D.L. Gibb, and C. P. Wang, Appl.
Phyt. Lett. 28, 522 (1976).
8. J.D. Daugherty, J.A. Mangano, and J.H. Jacob, Appl. Phys.
Lett. 28, 581 (1976).
9. J.H. Jacob and J A. Mangano, Appl. Phys. Lett. 28,
724(1976).
10. Joel Tellingheusen, G.C. Tisone, J.M. Hoffman, and A. K.
Hays (unpublished).
11. L.G. Piper, J.E. Velazco, and D.W. Setser, J. Chem. Phys.
59, 3323 (1973).
12. M. Bcurene, O. Dutuit, and J. LeCalve, J. Chem. Phys. 63,
1668 (1975).
13. J.E. Velazco, J.H. Kolts, and D.W. Setser (unpublished).
14. According to D.W. Setser a rate constant in excess of the
gas kinetic rate is not likely.
15. J.J. Ewing, J.H. Jacob, J.A. Mangano, and H. Brown, Appl.
Phys Lett. 28, 656 (1976).
16. CA. Brau and J. J. Ewing (unpublished).
17. It is also a possibility that NF3 quenching is important.
This implies a reaction rate of 2 x 10-9 cmV8ec«
18. H. Hyman (private communication).
19. CA. Brau and J. J. Ewing (unpublished).
A-13
-v*. «•" t^«af«t -r- • -j- :
-
1 Mw•mtiü^'ujMU.J tnjitiiaw, i iu. •'".'/'•»'"w iifi.%K*l*wn
^.uujpnifimii.i!uiii,» MI„II,.»HI»III'HUIIIIH j um* m i-.j
I.I,»I.UII. i IM s*>»»jn*s»»»»m*
DISTRIbUTlON UST (Continued)
','1
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Central Intelligence Agency, Waahington, D.C. 20505 - Attn: Mr.
Julian C. Nail (1 copyl
Analytic Services, Inc., 5611 Leeeburg Pike, Falls Church, VA
22041 - Attn: Dr. John Davia (1 copyl
Aeroepace Corp., P.O. Box 92957, Loe Angelee, CA 90009 - Attn:
Dr. G. P. Millburn (I ropy)
Alreeearch Manuf. Co., 9851.9951 Sepulveda Blvd.. Los Angeles,
CA 90009 - Attn: Mr. A. Colin Stancllffc (1 copyl
Atlantic Reaearch Corp., Shirley Highway at Edaall Road,
Alexandria, VA 22114 • Attnt Mr. Robert Naismith (I copyl
Avco Everett lloecarch Lab., 2185 Revere Beach Parkway, Everett,
MA 02149 - Attnt Dr. George Sutton (1 copy) Dr. Jack Daughterly (I
copy)
Battelle Columbus Laboratories, 505 King Avenue, Columbua. OH
41201 - Attnt Mr. Fred Tletael (ST PI AC I (I copy)
BeU Aerospace Co., Buffalo, NY 14240 • Attnt Dr. Wayne C.
Solomon (I copy)
Boeing Company, P.O. Box 1999, Seattle, W A 98124 -Attnt Mr. M.
1. Gamble 12-, 460, MS «C -88 Ml copyl
Electro-Optical Syetema, 100 N. Hal*t*ad, Paaadena, CA 91107 •
Attnt Dr. Andrew Jensen (1 copyl
ESL, Inc., 495 Java Drive, Sunnyvale, CA 94086 • Attnt Arthur
Einhorn (1 copyl
•~**J
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»iiMWWM'i in.1 imrni » iuu>'»i»'w»^t'ii"^'unp'Uitin.i,
..iiiniiim.ini.--' • "'•' '•"•'•"i ..im mm i i jiapaipujjiu i.
DISTRIBUTION LIST (Continued)
C.o.r.l Electric Co., Space Diviaion, P.C. Bo» 8555.
Philadelphia, PA 19101 - Aitn: Dr. R R. Slgtamontl II copyl
«HMM Electric Co., 100 Ple.tic. Avaaua. Pitt.ll.ld. MA 01201 -
Attni Mr. D.O. Harrington (Rm. 1044) (I copy)
GmiU Roaurch Corp.. P.O. Box 3587, Santa Barbara. CA 9J105 .
Attn: Dr. R. Holbrook (I copy)
General Reeeerch Corp.. 1S01 Wil.on Blvd.. Suite 700, Arlington.
VA 22209 - Altai Dr. Oil«. F. Criml (I copy)
Horculee. Inc.. laduetriel Syetem Dopt., Wilmington, DE 19899 -
Ann: Dr. R.S. Vorle (1 copy)
Horculee, Inc.. P.O. Box 210. Cumberland. MD 21502 - Altai Dr.
Ralph R. Prackol (1 copy)
Hughee Re.»arch Lab... 3011 Malibu Canyon Road, Malibu, CA 90265
• Altai Dr. D. Forator (I copy)
Hughee Aircraft Co.. Aeroepaco Group • Syatoma Diviaion, Caaoga
Park, CA 91304 - Atta: Dr. Jack A. Atcalay (1 copy)
Hughee Aircraft Co., Caatiaala and Teale Straata, Bid«. 6, MS
E-125, Culvar City, CA 90230 • Atta: Dr. William Yataa (1 copy)
lnatitut« for Defaaa« Aaalyaaa, 400 Army-Navy Drlva, Arlington.
VA 22202 • Atta: Dr. Alvla Schaitaler (1 copy)
John» Hopkina Univaraity, Appliad Phyaica Lab., 8621 Caorgla
Aveaue, Silvar Spriag, MD 20910 • Atta: Dr. Albart M. Stone (I
copy)
Lawrence Llvarmorc Laboratory, P.O. Box 808. Livarmore, CA 94550
- Atta:. Dr. R.E. Klddar (1 copy) Dr. E. Teller I) copy) Dr. Joa
Flack (I copy)
Lo. Alamo» Scientific Laboratory, P.O. Box 1663, Lo. Alamo.. NM
87544 . Atta: Dr. Keith Boyor II copy)
Lulejlau aad Aaaociatea, Inc., Del Amo Financial Center, 21515
Hawthorne Blvd. - Suite 500, Torrance, CA 90503 (1 copy)
Lockheed Palo Alto Re. Lab., 3251 Hanover St.. Palo Alto, CA
94303 - Atta: L. R. Luaaford, Orga. 92-24, Bid.. 201 (1 copy)
Mathematical Science. Northweet. lac, P.O. Box 1887. Ballavua,
WN 98009 - Atta: Dr. Abraham Hertaborg (1 copy)
Martin Marietta Corp,, P.O. Box 179, Mail Station 0471. Daaver,
CO 80201 -Atta: Mr. Stewart Chapin II copy)
Ma..achu.ett. In.tltute of Technology. Lincoln Laboratory. P.O.
Box 73, Lexiagtoa, MA 02173 - Atta: Dr. S. Edalborg (1 copy) Dr.
L.C. Marquet (I copy)
McDonnell Douglaa Aatroaautica Co., 5301 Bolaa Avaaua,
Huntington Beach, CA 92647 • Atta: Mr. P. L. Klevatt, Dept.
A3-830-BBFO, M/S 9 (1 copy)
McDonnell Douglae Reaearch Labe., Dept. 220, Box 516, St. Louie,
MO 63166 . Attn: Dr. D. P. Amea (1 copy)
MITRE Corp., P.O. Box 208, Bedford, MA 01730 • Altai Mr. A.C.
Croo (1 copy)
North Americaa Rockwell Corp.. Autoaetice Div.. Aaahelm, CA
92803 - Atta: Mr. T. T. Kumagi, C/476 Mall Code HA 18 (I copy)
Northrop Corp., 3401 Weat Broadway, Hawthorne, CA 90250 • Attn:
Dr. Gerard HaeeerjUn, Laeer Syeteme Dept. (1 copy)
Dr. Anthony N. Pirri, Phyeical Science., Inc., 18 Lakeelde
Office Park, Wakefield, MA 01880 (1 copy)
RAND Corp. , 1700 Main Street, Santa Monica, CA 90406 - Attn:
Dr. C. R. Culp/Mr. G. A. Carter (I copy)
Raytheon Co., 28 Seyoo Street, Waltham. MA 02154 - Atta: Dr. F.
A. Horrigan (Ree. Div. ) (1 copy)
Raytheoo Co., Boaton poet Road, Sudbury, MA 01776 - Atta: Dr. C.
Sonnenechien (Equip. Div. ) (1 copy)
Raytheon Co., Bedford Laba, Mieeile Syeteme Div., Bedford, MA
01730 - Atta: Dr. H.A. Mehlhora 0 copy)
Rivereide Reaearch Inatitute, 80 Weet End Street, New York, NY
10023 - Atta: Dr. L. H. O'Neill (1 copy) Dr. John Boee (1 copy)
(HPECL Library) (1 copy)
MO Aeeoclatee, lac. P.O. Box 3580. Santa Monica, C A 90431
-Atta: Dr. R.E. LeLevler (I copy)
Rockwell International Corporation, Rocketdyne Divi.lon.
Albuquerque Dietrlct Office, 3636 Meaaul Blvd., NE, Suite 211,
Albuquerque, NM 87110- Atta: C. K. Krau«, Mgr. (1 copy)
SANDIA Corp., P.O. Box 5800, Albuquerque, NM 87115 -Atta: Dr. Al
Narath (1 copy)
Stanford Reaearch Inatitute, Maalo Park, CA 94025 - Atta: Dr. F.
T. Smith (1 copy)
Scioace Application., lac., 1911 N. Ft. Meyer Drlva, Arlington,
VA 22209 - Atta: L. Peckam (1 copy)
Science Application., lac, P.O. Box 328, Ana Arbor, MI 48103
-Atta: R.E. Meredith (1 copy)
Scieoce Application., lac, 6 Pre.ton Court, Bedford, MA 01703 -
Attn: R. Greeaberg 0 copy)
Science Application., lac , P.O. Box 2351, La Jolle, CA 92037 -
Atta: Dr. John Aemue (1 copy)
Syeteme, Scieoce aad Software, P.O. Box 1620, La Jolle, CA 92037
• Atta: Alan F. Kl.ln (1 copy)
Syeteme Coaeultaata. lac, 1050 31et Street, NW, Waehlagtoa, D.C.
20007 - Atta: Dr. R.B. Keller (l copy)
Thlokol Chemical Corp., WASATCH Diviaion, P.O. Box 524, Brlgham
City, UT »4302 - Attn. Mr. J.E. Haaeea II copy)
TRW Syeteme Group, One Space Park, Bldg. R-l. Rm. 1050, Rodoado
Beach, CA 90278 - Attn: Mr. Normal Campbell (I copy)
Ualted Techaologiae Reeearch Center, 400 Mala Street, Eeet
Hartford, CT 06108 - Attn: Mr. G. H. McLefferty () cople.l
ft
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DISTRIBUTION U»T (C«i».JI
Unit.d T.choolo,... Raaaarck C.a«.r. Pr.tt »>d Wkltaoy
Aircr.lt IN«.. Florida BfcD C.»t.r, Waal Palm iHcb, IL 1M02 Atta:
Dr. B. A. Schmidt..« (I copy I Mr. F.d Pin.l.y II copyl
VARZAN «irMiil«, «IMAC EHvi.lo», Ml ladu.tri.l Way, 5u Carlaa.
CA W070 . Altai Mr. Jack Oulaa II copy l
Vouiht Sy.t.m. Dt.i.ioo. LTV Aaraaaaca Cora.. P.O. Boa »007.
DaUaa. TX 7JIM - Atta, Mr. r.G. Stmpaoa. MS 2*4142 II copyl
Woatiagkouaa Elactric Corp., Daloaaa >ad Spaca Caalar.
BaU-w..k UUrauloaal Airport - Boa 74a. Baltlmora, MO 2120] • Atta:
Mr. W. F. Uat II coayl
We«tinr.hou«c Raaaarck Lab. , B.ulak Boa«. CkarcktU Bara,
Ptttatorgk. PA IMH • Atlas Dr. E. P. Rladal II copyl
United Tackaologla» Boaaarck Caatar, Baal Hartford, CT 0*104 .
Altai A.l. DaMarla (I copyl
Airboraa Iaatrumaata Laboratory. Wait WUtortaa Boa«, MoWilla. MV
1174a - Altai F. P.c. (1 ropy)
Caaaral Elactric BkD Caatar. fckaaactarfy. NY l»Ot . Altai Or.
OaaaM wblt. II copyl
Clavalaad Stala Ualvaraity, Cl.v.laad. OH 44115 • Altai Oaaa
Jack Soul., (I copyl
EXXON Raaaarck aad Eafiaaarlaf Co.. P.O. Boa». Had... NJ 07054 .
Alto: D. Cralalala II copy)
Ualvaraity of Marytaaa, Dapartmoat of Pkyalca «ad Aatroaoray,
Catlaaa Park, MD 20742 • Altai D. Currla II copy)
Sylvaala EUctrlc Product«. lac., 100 F.rfa.oa Drlv.. Mouatata
Vlow, CA «4040 • Altai L. M. Oatarlak II copy)
Nortk Amarlcaa Bockwall Corp., Aatoaatlca Divlaloa, JJ70
Mtr.loma Avaaua, Aaakalm, CA 12 '. -Altai R. Gudmuad.aa II
copyl
Maiaackuaatta laatltota of T.ckaoloiy, 77 MaaaacktMOIla Av.au..
Cambridge. MA 0X1J» - Atta o(. A. Javaa II copyl
Lockkaad Mtaalla k Spaca Co.. Palo Atta Baaaarak Lakoratartaa.
Palo AUo. CA ««30. • Atta: Dr. X. C. Oklmaa II copy)
ILC Lakoratorlaa, lac., 104 Camm.rclal Str.«. «uaayval«. CA
«4000 . Atta: L. Nobl. II copyl
Ualvaraity of Taaaa at D.H.«. P. O. Ban J01»». DaUaa. TX 742 JO
. Atta: Praf. Carl B. Colllaa II copyl
Polytackaic laatltata af Narr Torll, Bt. 110. Farral.gdal«. NY
117» • Altai Dr. WlUlam T WitUt |l copyl
»
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