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RMS VISION SYSTEMS Innovative Solutions for the Semiconductor Industry Application Note: CD Measurement for FET Features NGS 3500 Advanced Metrology System

Application Note: CD Measurement for FET Features

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Application Note: CD Measurement for FET Features. NGS 3500 Advanced Metrology System. CD Measurements. Image Data Set. Notes: 20 High Resolution Images of the same site were used in the repeatability test - PowerPoint PPT Presentation

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Page 1: Application Note: CD Measurement for FET Features

RMS VISION SYSTEMS Innovative Solutions for the Semiconductor Industry

Application Note:

CD Measurement

for FET Features

NGS 3500 Advanced Metrology System

Page 2: Application Note: CD Measurement for FET Features

RMS VISION SYSTEMS Innovative Solutions for the Semiconductor Industry CONFIDENTIAL

CD Measurements

Page 3: Application Note: CD Measurement for FET Features

RMS VISION SYSTEMS Innovative Solutions for the Semiconductor Industry CONFIDENTIAL

Image Data Set

Notes: 20 High Resolution Images of the same site were used in the repeatability test Wafer was slightly moved between measurement to create realistic positional and focus variation No vibration isolation or special fixture was used in the test

Page 4: Application Note: CD Measurement for FET Features

RMS VISION SYSTEMS Innovative Solutions for the Semiconductor Industry CONFIDENTIAL

Data Summary – CD Measurement

Notes: • Gate Width was calibrated as 0.5 um. • Other measurements were not calibrated.

• Optics: 100x Objective (FOV ~ 90um x 75 um)• Camera: High-Res. Color camera with 0.036 um/ pixel

< 0.01 micron Repeatability

4 seconds Processing Time (80 measurements)

Page 5: Application Note: CD Measurement for FET Features

RMS VISION SYSTEMS Innovative Solutions for the Semiconductor Industry CONFIDENTIAL

ChromaticEdge Contrast Technology *

* Patent Pending

This technology based on wavelength detection enables much better resolution for optical CD measurement. Resolutions below 10 nm are possible with standard optical microscopy.

The edges are very sharp based on wavelength contrast. Due to optical resolution limit, the same edge is blurred with noise and low contrast when light intensity (B&W) information is used.