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8/11/2019 analog mixed signal design
1/2
ECE 461 Analog and Mixed Signal Design
Assignment 2
1. A linear three terminal network can be characterized in terms of y-parameters by the equations:
2221212
2121111
vyvyi
vyvyi
+=
+=
Obtain the corresponding small signal equivalent circuit.
2. Consider a real voltage source and a real current source. Show that the small signal Thevenin
equivalent circuits of both the circuits are the internal impedances of the voltage source and
current source respectively.
3. Develop a small signal model for a device characterized by the following equations:
+=
=
51)2(25
)4(5
2312
11
VVI
VI
4. Derive an expression for MOSFET for the locus of points in the DSD VI plane where
0=
DS
D
V
I. Assume the MOSFET is modeled by usual level 1 model equations.
5. Assume a MOS device is to be modeled in the saturation region by the equation
( )2
2
'TGSD VV
L
WKI = but that the device is actually characterized by the
equation ( )
+=
201
2
' 2 DSTGSD
VVV
L
WKI , where TV is assumed to be constant in both the
equations. Also assume that the unknown parameters 'K and TV are to be experimentally obtained
from the first equation by measuring DI GSV GSV DSV
W L DI
(a) What values will be obtained for the parameters 'K and TV ?
(b)
What percentage error between experimental and theoretical results will be obtained using the
first equation and the parameters obtained in part (a) to predict DI
GSV DSV
(c) What percentage error between experimental and theoretical results will be obtained using the
first equation and the parameters obtained in part (a) to predict DI
GSV DSV
8/11/2019 analog mixed signal design
2/2
(d) How can correlation between theoretical and experimental results be improved?
6. Derive the small signal low frequency model of a MOS transistor operating in the ohmic region
with Q point DQI , GSQV , DSQV and BSQV . What does this reduce to if VVDSQ 0= ?