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---Introduction of power-on-chip development PMUSIMOEmbeddedIntegratedWirelessEco Bill Yang Liu Prof. Hong ZhiLiang Weiwei Xu, Bin Shao Analog Devices & Fudan University

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---Introduction of power-on-chip developmentPMU�SIMO�Embedded�Integrated�Wireless�Eco

Bill Yang Liu

Prof. Hong ZhiLiang

Weiwei Xu, Bin Shao

Analog Devices & Fudan University

Introduction of the power-on-chip development

1)PMU

2)SIMO

3)Embedded Power

4)Integrated Power

5)More

Power

Management

Chip 1

System Chip

Power

Management

Chip 2

Induct/Cap/Res

A System Solution in Portable Applications

Induct/Cap/Res

4

Power Management Units (PMU)

• Integration to improve system flexibility

• Small package and small form of factor

– Cost reduction

• Package cost

• BOM cost

– Performance improvement

• Efficiency

• Easy sequence control

5

• Charger• Switching regulators

• buck• boost• buck/boost• inverter

• LDO• Backlight driver• Audio driver• Ambient light sensor• Touch panel sensor• RTC• Sequence control• Voltage monitor and

supervisory

Product Example

Ref: C. Shi, CICC 2006, pp. 85-88

6

Package Roadmap

7

WLCSP Solution

• Package size is as large as die size

8

BOM Reduction

9

PMU Topics

• Trend

– More functions/high density

– Smaller/thinner/cheaper package

– Higher frequency

• Issue

– Thermal

– Noise coupling and crosstalk

– Design challenge in high switching frequency

• Current sensing for current mode control

10

PMU Design Considerations

• System optimization, not chip optimization

• Power and analog supply separation

• Layout strategy

– Power stage position

– Crosstalk between channels

– Guardring and sensitive line routing

PMU

System Chip

Induct/Cap/Res

A System Solution in Portable Applications

Induct/Cap/Res

12

Reduce External Inductor

• Single-inductor multiple-output converter

– Input switches : regulate total energy

– Output switches: distribute energy

• SIDO buck example

13

SIMO Ripple: Fly Capacitor

• Ripples and spikes of SIDO buck converter

– Caused by parasitic ESR and ESL

– Inverse phase: Vrp1 = -Vrp2

• A fly capacitor across two outputs with a servo

common mode control

V1

V2

S3

S4

iL3

iL4Cf

T

iL

VLX1

Vrp1

Vrp2

Ref: W. Xu, CICC 2009, pp. 303-306

14

Multi-Loop Feedback System

15

Extended-PWM (EPWM) control

Ref: W. Xu, ISSCC 2011

16

Loop Compensation

• Continuous vs. Discrete-time

Vfb2

Vrf2

Vfb1

Vrf1

Vbias Vea

1

2

1

2

1

1 1

1 1

2 2

2 2

Vrf2

Vrf1

Vfb1

Vfb2Vea

Ref: M. Belloni, ISSCC 2008, pp. 444-445

17

SIMO: Trade-off

Switching

Converter

Cost

Efficiency Size

Design

ComplexityRipple

Conventional

Converter

SIMO

Converter

PMU

System Chip

Induct/Cap/Res

A System Solution in Portable Applications

19

System in Package (SiP)

Ref: Lotfi, IEEE APEC 2010

20

SiP: Stack & Side

Controller + Power transistor Controller + Power transistor Regulator + Inductor

Ref: B. Chen, IEEE APEC 2010

21

SiP Technique

• Now

– Magnetic materials on silicon

• Inductance <100nH

• Switching frequency > 20MHz

– Regulator with integrated inductor

• Assembly with standard MCM process

• Future

– Increase the integration density

– Multi die to single die

22

Embedded Power

DSP

MCU

Embedded

Memory

Linear

Regulators

Battery

Charger

Digital Modulator

Digital

Filter

Digital

Filters &

Sample

Rate

Conversion

ADC

DAC

Audio

ADC

Audio

DAC

Receiver

Transmitter

Flash

Memory

SRAM

DBB (Digital) ABB (Mixed-Signal)

Audio (Mixed-Signal)

RF

PA

Power management

Memory

Switching

Regulators

Communication Accelerators

23

Class G / Class I

Output Waveforms of class G

(a) Vout,pp=2V (b) Vout,pp=4.8V

Vop

Von

Vop-Von

Vop

Von

Vop-Von

25

HV in MEMS

• Low Insertion Loss• High Linearity• High Isolation

• MEMS Gyroscope

– Mechanical Structure of gyro needs to be driven by HV

electrostaticsly.

– Coriolis signal ∝ Force ∝ V2

– Increased SNR

26

How to Generate the HV

• Inductor based

– Expensive

– Two pinouts

• Capacitor based

– One pinout

– Integrated capacitor can be used as the MEMS

capacitance drops while its process improves

– ~100uA

27

Integrated HV Charge Pump

Resistor d

ivider

28

Other Applications of HVCP

• E2PROM

• Flash Memory

• MEMS Switches

• Liquid Crystal Lens Driver

• More...

PMU

System Chip

Induct/Cap/Res

A System Solution in Portable Applications

Vin

Vout

MP

MN

Vramp

Vref

z1 z2

Error

amplifierPWM

comparator

Gate

driver

Motivation

• Integrated DC-DC converters are needed

with SOC and on-chip power scaling

On-chip Off-chip

1 10 100 1000

0

0.5

1

1.5

2

2.5

3

3.5

L (µH)

Frequency (MHz)

L≈1 µH, fsw=3 MHz

L≈10 nH, fsw=200 MHz

Inductance vs Frequency

( )out in out

in sw o

V V VL

V f I

× −=

× ×

Challenge: low Quality factor results in low power efficiency

On-chip Inductor

Q-factor vs Power Efficiency

• Parasitic resistances

– Metal resistance: Rs

– Substrate resistance: Re2

con rmsP I R= ×

2sw swP C V f= × ×

• Parasitic capacitances

– Spiral-to-substrate capacitance: Cox

– Spiral-to-underpass overlap capacitance: Cf

Port1 Port2

Top View of the Inductor

• Number of sides=16

• Number of turns=2.75

• Metal width=100 µm

• Inner diameter=800 µm

22 W××××Overlap area:

Cross-section View

M8

M7

– Basic structure, low quality factor

– We should take advantage of the eight copper

layers available in the process!

Port1

Port2

Multi-layer Winding

M8

M7

M6

M5

M4

M3– Multi-layer winding can reduce the

series resistance Rs

Port1

Port2

M6-to-M4 Spacing

M8

M7

M6

M4

M3

M2

– M6-to-M4 spacing can reduce the

overlap capacitance Cf

Port1

Port2

Patterned N-Well

– Reduce the electric and magnetic

coupling to the substrate

M8

M7

M6

M4

M3

M2

N-Well

Port1

Port2

Performance of the Inductor

Process Material L Rseries Cparasitic

JSSC07 [1] 0.35µm0.02 ΩΩΩΩ/squareAluminum

22nH 2.5 ΩΩΩΩ 25 pF

ESSCIRC08[5] 0.13µm2 µm Copper+

1.2 µm Aluminum9.8nH 1.6 ΩΩΩΩ —

CICC08[3] 0.18µm Golden bond wire 18nH 1 ΩΩΩΩ —

This work 0.13 µm3+0.385+0.385 µm

Copper10.5nH 1.2 ΩΩΩΩ 3 pF

Improve Area Efficiency

“�” denotes the top plate

“�” denotes the bottom plate

• MOS cap

• ≈3.6 nF/0.62 mm2

• 44% improvement

• Metal fringe cap

– Vertical

– Lateral

Circuit Architecture

• Features

– Vin=3.3 V

– fs~250 MHz

– On-chip L

– On-chip Cout

– Buck converter

Chip Micro-photograph

Measured Power Efficiency

The input voltage is 3.3 V for all measurements

10

20

30

40

50

60

70

80

90

0 50 100 150 200 250 300 350 400

Load Current (mA)

Efficiency (%)

Vout=2.5 V

Vout=1.8 V

Vout=1.2 V

Compare LDO With Buck

The efficiency of LDO is prior to Buck at light loads, vice

versa.

75.0@ =Vin

Vout

43

Especially, when

the load current is

zero, the Buck

consumes more

than 10mW,

While the LDO

consumes less

than 1mW.

Proposed Structure

1.2V 50mV

Iload>IthIload<Ith

4.5nH

7n

44

LDO Consideration

nFCout 7=

Stability is difficult to design!

Dominant pole

Non-dominant pole

45

LDO Consideration

[2]

Worst Phase margin!

46

Analysis of LDO

Adaptively Adjust P3

First stage

•Large quiescent current to

put P3 to high frequency

•Static condition is hard to

control---Vth5 , R4 , I6

47

Adaptive P3 Adjust Circuit.

IQ

48

Analysis of Loop1

•The First Loop

49

Transfer Function of Loop1

gm1

1x

gm6

Cp5 R4//(1/gm8)1/gm6

gm5

CL Roeq

VOUT

B

C1 ro1

gm4

gm7gm4

Cut Loop

Here

•CL>>C1>Cp5

8

44

1//

mgRZ =

)1)(1)(1(

)1))/1((

(

))/()(1(

)))/1((()(

544

4511

5

675

11

5446744545

2

11

5446744511

+++

++

++++

++•≈

mm

outpop

m

mmp

om

oeqmmoeqoutmmoeqmpoeqpoutop

oeqmmmmoeqmpom

gZg

sCZsCrsC

sg

ggCrBg

RgZgRCggRgZCsZRCCsrsC

RgZgsggRgZCrBgsT

50

Full Load

Condition

GBW=100K

PM=82 degree

No Load

Condition

GBW=100K

PM=86 degree

Bode Plot of Loop1

16

Layout of the Chip

Process: SMIC 0.13 µm 1.2/3.3 V 1P9M RF CMOS 52

Simulated Power Efficiency

Vin= 1.2 V, Vout=0.9V

53

More…To be really invisible

PMU

System Chip

Induct/Cap/Res

A System Solution in Portable Applications

PMU

System Chip

Induct/Cap/Res

System 1 System 2

56

Wireless Power

• Wireless signal � Wireless power

57

Not a New Topic

Tesla’s high frequency and potential lecture of 1891

58

But an Emerging Market

Source: iSuppli Corp. 2010

• Mobile phone market drives the growth

PMU

System Chip

Induct/Cap/Res

A System Solution in Portable Applications

System 1 Energy

Source

60

Self-Power

• Generate energy

– From solar

– From heat

– From vibration

– From RF energy

– From anything…

• E.g. nokia patent

– Piezoelectric kinetic

energy harvester

Source: US patent 2010/0045241 A1

61

EE: Energy Engineering

• Energy generation

– Solar energy

– Piezoelectric energy

• Energy transmission

– Non-isolated power stage

– Wireless power

• Energy conversion

– Linear vs. Switching

– Inductor based vs. Charge pump

PMU

System Chip

Induct/Cap/Res

Advanced Power Management Techniques for Portable Applications

System 1 Energy

Source

The power-invisible solution…

Green Power