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Table 1The comparison and optimum result of thethickness of the waveguide according to InsertionLoss and Extinction Ratio of the Proposedstructure
Thickness
width(µm)Switching
State
Output
Port
I.L.(dB) Ex.R.(dB)
7.5
State 1
Out 1 -1.93-11.07Out 2 -13.01
Out 3 -5.27
State 2
Out 1 -18.23-17.43Out 2 -0.80
Out 3 -8.44
State 3
Out 1 -12.51-19.22Out 2 -19.58
Out 3 -0.362
8.0
State 1
Out 1 -0.70-11.9Out 2 -12.6
Out 3 -10.3
State 2
Out 1 -23.0-22.67Out 2 -0.34
Out 3 -11.7
State 3
Out 1 -23.0-22.94Out 2 -21.4
Out 3 -0.06
8.5
State 1
Out 1 -0.57-12.89Out 2 -12.51
Out 3 -13.46
State 2
Out 1 -15.68-14.43Out 2 -1.249
Out 3 -6.861
State 3
Out 1 -9.546-7.277Out 2 -5.543
Out 3 -2.269
The simulation results show good performance forthis structure. Table 1 shows the insertion loss(I.L.), and the extinction ratio (Ex.R.) of theproposed optical switch. Insertion loss of a switchis a part of power that is lost and has to be low forgood performance and the extinction ratio is theratio of output power in ON state to output powerin OFF state. Insertion loss and extinction ratiothat are the important parameters for opticalswitching can be calculated by these equations:
I.L.(dB)=
in
out
PP
10log10 (2)
Ex.R.(dB)=
high
low
PP
10log10 (3)
Where outP and inP are the output and input powerand highP and lowP show the higher and sum oflower levels in output in both state of ON andOFF[5]. As shown in Table 1, the output results ofthe device are acceptable for a good performanceof all-optical switch.With choosing the exactreflecting index, this structure can work as 3x3Switch Based On Integrated Mach-ZehnderInterferometer. In the future, with the materialsthat can have higher nonlinearity the outputs of thestructure can increase to have an all-optical switchwithout any complicated materials or structure.
3 Analyze the influence of Electro-Optic
The influence of Electro-Optic refer to changes inthe refractive index of material induced by theapplication of an external electric field, whichtherefore modulates the optical properties , theapplied field is not the electric field of any lightwave, but separate external field[8]. Ordinarilyalteration in the refractive index are Slightly. Theinfluence of electro-optic are categorizedaccording to first and second order effects. Therefractive index n have been taken as a function ofapplied electric field E, that is n=n(E), so it can beexpand this as a Taylor series in E. The newrefractive index n’ would be:
n’= n + a1 E + a 2 E 2 + ... (4)
WSEAS TRANSACTIONS on COMMUNICATIONSMohammad Syuhaimi Ab. Rahman, Khaled Mohamed Shaktur, Rahmah Mohammad
ISSN: 1109-2742 357 Issue 6, Volume 9, June 2010
Where the coefficients a1 , and a 2 are called thelinear electro-optic effect and second orderelectro-optic effect coefficients. The change in ndue to the first E term is called the Pockels effect.The change in n due to the second E 2 term iscalled the Kerr effect, and the coefficient a 2 isgenerally written as λK, where K is called the Kerrcoefficient.In the case of the Pockels effect, the preciseeffect of the applied electric field depends onthe crystal structure and symmetry of thematerial under consideration. main contributionto birefringence to electro-optical crystal is dueto Kerr’s effect, it means[12]:
∆n p <<∆n k
The Kerr electro-optical effect consists in the factthat, under the influence of an electric field, anoptical anisotropy with an induced optical axisappears. The axis is directed along the appliedelectric field. When light radiation passes througha sample located in the electric field, a phasedifference φ appears between the orthogonallypolarized light components [10]:
ϕ = 222 KlEnl πλπ
=∆ (5)
Where n∆ is the induced birefringence; l is thelength of the optical path in the zone of fieldapplication; in the zone of field application; λ isthe light wavelength; E , V/m, is the electric fieldstrength; and K, m/V 2 , is the Kerr coefficient ofthe material. Assuming that the electric field isuniform, the field strength E can be expressed viathe applied voltage oV and the distance betweenthe electrodes d . Expression (1) then takes theform:
ϕ = 2πBl 2oV / d 2 (6)
The Pockles effect expressed in this equation:
Ean 2=∆ (7)
This is an over-simplification because in reality itmust be consider the effect of an applied fieldalong a particular crystal direction on therefractive index for light with a given propagationdirection and polarization[8].
Fig.4 The index ellipsoid showing the principalaxes of the dielectric (x,y,z) and thecorresponding refractive indices(n x , n y , n z )
3.1 Electric impermeability, indexellipsoid, dielectric constant andrefractive index
In many optical fibre applications, such asinterferometry, the effective refractive index ofthe guided modes is of great interest. In the caseof electro-optic responses, it is often moreinformative to know how the refractive indexresponds to an incident electric field than tocompletely understand the non-linear polarisation.The electric displacement field is defined by therelation:
=ε0+ (8)
where is the electric field, ε0 is the permittivityof free space, and is the dipole moment per unitvolume or polarisation density. The electricdisplacement field can be expressed in terms ofthe electric polarisability as:
=ε0 1+ = (9)where is the electric permittivity.
WSEAS TRANSACTIONS on COMMUNICATIONSMohammad Syuhaimi Ab. Rahman, Khaled Mohamed Shaktur, Rahmah Mohammad
ISSN: 1109-2742 358 Issue 6, Volume 9, June 2010
The electric impermeability switch =0 can beused to construct the index ellipsoid i.e.
1=∑ij jiij xxη , ,=1,2,3, (10)
where ijη are the elements of the impermeabilityswitch . The index ellipsoid and the electricimpermeability tensor can be used to describedielectrics and anisotropic materials such ascrystals. The principal axes of the ellipsoid are theprincipal optical axes of the dielectric and thedimensions along these axes are the correspondingrefractive indices (see Fig.4). In the case of opticalfibre where the propagation direction or axis of thefibre may be assigned to the z direction, or axis, ofthe index ellipsoid and then the dimensions alongthe x and y axis are the refractive indices for x andy polarised modes. i.e.
xη =xεε 0 = 2
1xn
, and yη =yεε0 = 2
1
yn(11)
The presence of a DC electric field will alter theindex ellipsoid so that elements of the indexellipsoid become a function of the electric field i.eΕijη . To include the non-linear response the
electric impermeability switch can be expanded ina Taylor’s series about E=0 as follows.
lkijklkijkijij sr ΕΕ+Ε+=Ε ηη )( , ,,,=1,2,3 (12)
Where )0(ijij ηη = ,k
ijijkr
Ε∂∂
=η
,lk
ijijklK
ΕΕ∂
∂=
η2
21
and the derivatives are evaluated at E=0. Thesummation notation over repeated indices isimplied and the ijkr and ijklK coefficients arecalled the Pockels and Kerr coefficientsrespectively.
4 ConclusionsAn optimum 3x3 optical switch based on
Mach-Zehnder interferometer was successfullydesigned using OptiBPM, for switching opticalsignal with wavelength 1300nm. The couplingefficiency of the 3x3 optical switch designed canbe controlled by changing the voltage applied tothe electrode region. When no voltage is applied,the switch acts as a passive optical switch in whichthe coupling efficiency is 100%. When switchingvoltage is applied to the electrode region of the
3x3 optical switch, on coupling occurs where theoptical signal is switched to the same outputwaveguide. With this electro-optic effect, the 3x3optical switch can act as an electro-optic switch toswitch optical signal to desired output port.
WSEAS TRANSACTIONS on COMMUNICATIONSMohammad Syuhaimi Ab. Rahman, Khaled Mohamed Shaktur, Rahmah Mohammad
ISSN: 1109-2742 359 Issue 6, Volume 9, June 2010
( a )
( b )
Fig. 5 (a) Beam propagation simulation and the normalized output power of the proposed structure in the first state ofthe switching operation.(b)The output power vs. Iterations in the first state according to the effect of changingthe voltage -8.0V.
WSEAS TRANSACTIONS on COMMUNICATIONSMohammad Syuhaimi Ab. Rahman, Khaled Mohamed Shaktur, Rahmah Mohammad
ISSN: 1109-2742 360 Issue 6, Volume 9, June 2010
( c )
( d )
Fig. 6 (c) Beam propagation simulation and the normalized output power of the proposed structure in the secondstate of the switching operation.(d)The output power vs. Iterations in the second state according to the effectof changing the voltage 0.0V.
WSEAS TRANSACTIONS on COMMUNICATIONSMohammad Syuhaimi Ab. Rahman, Khaled Mohamed Shaktur, Rahmah Mohammad
ISSN: 1109-2742 361 Issue 6, Volume 9, June 2010
( e )
( f )
Fig.7 (e) Beam propagation simulation and the normalized output power of the proposed structure in the third stateof the switching operation.(f)The output power vs. Iterations in the third state according to the effect ofchanging the voltage 8.0V.
WSEAS TRANSACTIONS on COMMUNICATIONSMohammad Syuhaimi Ab. Rahman, Khaled Mohamed Shaktur, Rahmah Mohammad
ISSN: 1109-2742 362 Issue 6, Volume 9, June 2010
Acknowledgment:This work is sponsored by National UniversityMalaysia-Universiti Kebangsaan Malaysia(UKM), throughout grand no: UKM-AP-ICT-17-2009, 01-01-02-SF0493. The authors would like tothank the project leader and appreciate hiskindness, valuable assistance, and financialsupport.
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WSEAS TRANSACTIONS on COMMUNICATIONSMohammad Syuhaimi Ab. Rahman, Khaled Mohamed Shaktur, Rahmah Mohammad
ISSN: 1109-2742 363 Issue 6, Volume 9, June 2010