Materials Research Society

Symposium Proceedings Volume 910

Amorphous and PolycrystallineThin-Film Silicon Science and

Technology—2006

Symposium held April 18-21, 2006, San Francisco, California, U.S.A.

EDITORS:

Sigurd WagnerPrinceton University

Princeton, New Jersey, U.S.A.

Virginia ChuINESC Microsistcmas c Nanotccnologias

Ltsboa, Portugal

Harry A. Atwater, Jr.

California Institute ofTechnology

Pasadena, California, U.S.A.

Kenji YamamotoKaneka Corporation

Shiga, Japan

Hsiao-Wen ZanNational Chiao Tung University

Hsinchu, Taiwan, R.O.C.

IMIRIS

Materials Research SocietyWarrendale, Pennsylvania

TECHNISCHE

INFORMATIONSBIBLIOTHEK

UNIVERSITATSBIBLIOTHEK

HANNOVER

CONTENTS

Preface xxi

Materials Research Society Symposium Proceedings xxiii

TRANSPORTANDELECTRONIC

PROPERTIES

* Time-Resolved Photoconductivity as a Probe of Carrier

Transport in Microcrystalline Silicon 3

Steve Reynolds

Simulation of Realistic Core-Shell Silicon Nanowires... 15

Rana Biswas and Bicai Pan

Electronic Characterization and Light-Induced Degradationin nc-Si:II Solar Cells 21

P.G. Hugger, Shouvik Datta, P.T. Erslev, Guozhen Yue,Gaulam Ganguly, Baojie Yan, Jeffrey Yang, Subhendu Guha,and J.D. Cohen

METASTABILITY

* Metastability in Hydrogenated Nanocrystalline Silicon

Solar Cells 29

Guozhen Yue, Baojie Yan, Gaulam Ganguly,Jeffrey Yang, and Subhendu Guha

Characterization ofthe Evolution in Metastable Defects

Created by Recombination of Carriers Generated byPhoto-Generation and Injection in p-i-n a-Si:H Solar Cells 41

Jingdong Deng, Benjamin Ross, Mathew Albert,

Robert Collins, and Christopher Wronski

The Effect of Oxygen Contamination on the Electronic

Properties of Hot-Wire CVD Amorphous Silicon

Germanium Alloys 47

Shouvik Datta, J. David Cohen, Steve L. Golledge,

Yueqin Xu, A.H. Mahan, James R. Doyle, and

Howard M. Branz

*Invited Paper

v

GROWTHMECHANISMS

Surface Roughening Transition in Sii„xGex:H Thin Films 55

Nikolas J. Podraza, Christopher R. Wronski,

Mark W. Horn, and Robert W. Collins

Reaction Mechanism for Deposition of Silicon Nitride by

Hot-Wire CVD With Ultra High Deposition Rate (>7 nm/s) 61

Vasco Verlaan, Zomer Silvester Houweling,Karine van der Werf, Hanno D. Goldbach, and

Ruud Schropp

GROWTH TECHNIQUESAND

INTERFA CE STUDIES

* Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H

Films Deposited at Low Substrate Temperatures 69

Shinsuke Miyajima, Akira Yamada, and Makolo Konagai

Dual-Chamber Plasma Co-Deposition of Nanoparticlesin Amorphous Silicon Thin Films 79

C. Anderson, C. Blackwell, J. Deneen, C.B. Carter,J. Kakalios, and U. Kortshagen

Interface Study of Nanocrystalline Silicon and CrystallineSilicon Using Microwave Photoconductivity Decay ,

85

Mahdi Farrokh Baroughi and Siva Sivoththaman

Orientation-Dependent Dewetting of Patterned Thin Si

FilmonSiOj 91

E. Dornel, J-C. Barbe\ J. Eymery, and F. de Cr^cy

THEORY OFSTRUCTURE

AND TRANSPORT

Research-on Amorphous Silicon Thin-Film Structure

and Growth Processes Using Nonlinear Dynamics Methods 99

Nikolay Viktorovich Bodyagin, Sergey Pavlovich Vikhrov,Tatiana Gennadievna Larina, and Stanislav Mursalovich Mursalov

*Invited Paper

vi

Molecular Dynamic Computer Simulation of Thin

Film's Heat Dissipation Rate 105

Ya-Yun Cheng, Horng-Ming Hsieh, and

Cheng-Chung Lee

Thermal Conductivity and Natural Cooling Rate of

Excimer-Laser Annealed Si: A Molecular DynamicsStudy Ill

Byoung Min Lee, Baek Seok Seong, Hong Koo Baik,Shinji Muneloh, and Teruaki Motooka

Phononic Amorphous Silicon: Theory, Material, and

Devices 117

Samrat Chawda, Jose Mawyin, Harv Mahan,Charles Fortmann, and Gary Halada

A Second Order Accurate Finite Difference Scheme

for the Heat Equation on Irregular Domains and

Adaptive Grids 123

Han Chen, Chohong Min, and Frederic Gibou

MEASUREMENTS OFFILMAND

INTERFACE PROPERTIES

Environment of Er Doped in a-Si:H and Its Relation With

Photoluminescence Spectra 131

Minoru Kumeda, Yoshitaka Sekizawa, Akiharu Morimoto,

and Tatsuo Shimizu

Photocarrier Radiometric Lifetime Measurements of

Intrinsic Amorphous-Crystalline Silicon Heterostructure 137

Keith R. Leong, Andreas Mandelis, Nazir P. Kherani,and Stefan Zukolynski

Microstructure Characterization of Amorphous Silicon-

Nitride Films by Effusion Measurements 143

W. Beyer and H.F.VV. Dekkers

Quantization of Crack Speeds in Dynamic Fracture of

Silicon: Multiparadigm ReaxFF Modeling 149

Harvey Tang, Janet Rye, Markus J. Buehler,Adri van Duin, and William A. Goddard III

vn

AMORPHOUS SILICON GROWTH

Effect of Hydrogen Dilution on Structure and Electronic

Properties of Ge:H and GcYSii.Y Films Deposited by Low

Frequency Plasma 157

A. Kosarev, L. Sanchez, A. Torres, T. Felter, A. Ilinskii,Y. Kudrjavtsev, and R. Asomoza

Thin Films of GeC Deposited Using a Unique Hollow Cathode

Sputtering Technique 163

James L. Huguenin-Love, Rodney J. Soukup, Natale J. Ianno,Jason S. Schrader, and Vikram L. Dalai

The Influence of Deposition Conditions on the Electronic

Properties of a-Si;H Prepared in Expanding Thermal

Plasma 169

Monica Brinza and Guy J. Adriaenssens

Grain Nucleation and Grain Growth During Crystallizationof HWCVD a~Si:II Films 175

S.P. Ahrenkiel, B. Roy, A.H. Mahan, and D.S. Ginley

The Influence of Thermophoresis Effects During Depositionof Hydrogenated Amorphous Silicon Thin Films With

Nanocrystalline Silicon Inclusions 181

C. Blackwell, C. Anderson, J. Deneen, C.B. Carter,

U. Kortshagen, and J. Kakalios

NANOCRYSTALLINEAND

MICROCRYSTALLINE SILICON FILMS

Incubation Layer-Free Nanocrystalline-Si Thin Film

Fabricated by ICP-CVD at 150°C for Flexible Electronics 189

Sang-Myeon Han, Young-Kwan Cha, Joong-Hyun Park,

Sang-Geun Park, YoungSoo Park, and Min-Koo Han

Role of Hydrogen in the Grain Growth in MicrocrystallineSilicon Films 195

Gyu-Hyun Lee and Jong-Hwan Yoon

Influence ofAnnealing on Crystallinity and Conductivityof p-type Nanocrystalline Si Films 201

Durga P. Panda and Vikram Dalai

vni

The Influence of the Hot Wire Temperature on the

Crystallization of jic-Si:H Films Prepared by Hot

Wire-Assisted-ECR-CVD 207

Ying Li, Zhi Zhong Li, Guang Hua Chen, andMinoru Kumeda

Effects of HWCVD-Deposited Seed Layers on

Hydrogenated Microcrystalline Silicon Films

on Glass Substrates 213

Michael M. Adachi, Wing Fai Lydia Tse,

Garnet Cluff, Karen L. Kavanagh, and

Karim S. Karim

Detection ofSiH3 Radicals and Cluster Formation in a

Highly H2 Diluted SiH4 VHF Plasma by Means of Time

Resolved Cavity Ring Down Spectroscopy 219

Takehiko Nagai, Arno H.M. Smets, and Michio Kondo

Experimental Studies of Photoluminescence in Mn-Ion

Implanted Silicon Rich Oxide Thin Film 225

Wei Pan, R.G. Dunn, M.S. Carroll, and Y.Q. Wang

Nucleation and Growth of Quasicrystalline Silicon Thin

Films on Glass Substrate Synthesized by Ceramics Hot

Wire Chemical Vapor Deposition 231

Abdul Rafik Middya, Jian-Jun Liang, and Kartik Ghosh

DEFECTSAND METASTABILITY

Relationship Between Phase Shift, Square-Wave Responseand Density of States in Modulated Photocurrent Spectroscopy 239

Steve Reynolds and Charlie Main

Thermally-Stimulated Currents in Thin-Film Semiconductors:

Analysis and Modeling 245

Charles Main, Nacera Souffi, Steve Reynolds,Zdravka Aneva, Rudi Bruggemann, and Mervyn Rose

The Concentration of (SiH2),, Sites in Low and High Defect

Density a-Si:H 251

D.C. Bobela, T. Su, P.C. Taylor, A. Madan, and G. Ganguly

ix

/(

OPTICAL PROPERTIES

Dielectric Functions of a-Sii.xGex:H versus Ge Content,

Temperature, and Processing: Advances in OpticalFunction Parameterization 259

Nikolas J. Podraza, Christopher R. Wronski,

Mark W. Horn, and Robert W. Collins

OTHER MATERIALS

Role of Surface on the Persistent Photoconductivity in

Porous Silicon and Boron Doped a-Si:H* 267

S.C. Agarwal, Abhishek Kumar, and N.P. Mandal

Pulsed Laser Deposition of Boron Doped Si70Ge3o 273

Sherif Sedky, Ibrahim El Deflar, and Omar Mortagy

Blue Light Emission From PECVD Deposited Nanostructured

SiC 279

Liudmyla Ivashchenko, Andriy Vasin, Volodymyr Ivashchenko,

Mykola Ushakov, and Andriy Rusavsky

Novel Semiconducting Phase of Amorphous Carbon Nickel

Composite Films 285

Somnath Bhaltacharyya, S.J. Henley, N.P. Blanchard,and S.R.P. Silva

NANOCRYSTALLINE SILICON GROWTH

* Growth and Electronic Properties of Nanocrystalline Si 293

Vikram L. Dalai, Kamal Muthukrishnan, Satya Saripalli,Dan Stieler, and Max Noack

Numerical Simulation of Microcrystalline Silicon Growth

on Structured Substrate 303

Martin Python, Evelyne Vallat-Sauvain, Julien Bailat,

Christophe Ballif, and Arvind Shah

Fast Deposition of Highly Crystallized Microcrystalline Si

Films Utilizing a High-Density Microwave Plasma Source

for Si Thin Film Solar Cells 309

Haijun Jia, Hajime Shirai, and Michio Kondo

* Invited Paper

x

Low Temperature Fabrication of Microcrystalline Silicon

Germanium Films by RF Reactive Magnetron Sputtering 315

Isao Nakamura, Toru Ajiki, and Masao Isomura

LASER CRYSTALLIZATION

* Enlargement of Grain Size and Location Control of

Grain in Excimer-Laser Crystallization of Si Film 323

Wenchang Yeh, Dunyuan Ke, and Chunjun Zhuang

High Efficiency Crystallization of Silicon Thin Films

Using Continuous Wave Infrared Laser 329

Naoki Sano, Masato Maki, Nobuyuki Andoh, and

Toshiyuki Sameshima

The Crystallization Mechanism of Poly-Si Thin Film UsingHigh-Power Nd:YAG Laser With Gaussian Beam Profile 335

Hsiao Wen Zan, Chang Yu Huang, Kazuya Saito,Kouichi Tamagawa, Jack Chen, and Tung Jung Wu

CONTROLLED CRYSTALLIZATION

* Roughness, Impurities and Strain in Low-Temperature

Epitaxial Silicon Films Grown by Tantalum Filament

Hot-Wire Chemical Vapor Deposition 343

Charles W. Teplin, Matthew W. Page, Eugene W. Iwaniczko,

Kim M. Jones, Robert M. Ready, Bobby M. To,

Helio M, Moutinho, Qi M. Wang, and Howard M. Branz

Periodic Alignment of Silicon Dot Fabricated by LinearlyPolarized Nd:YAG Pulse Laser 353

Kensuke Nishioka and Susumu Horita

The Investigation of High Performance TFT by Thin Beam

Directional X-tallization Method 359

Chihwei Chao, Jiatien Peng, C.W. Cheng, Chunghung Chen,

Brandon A. Turk, and Bernd Burfeindt

*Invited Paper

XI

Physics of Solid-Phase Epitaxy of Hydrogcnatcd AmorphousSilicon for Thin Film Si Photovoltaics 365

Paul Stradins, Yanfa Yan, Robert Reedy, David L. Young,Charles W. Teplin, Eugene Iwaniczko, Yueqin Xu, Kirn Jones,

Glenn Teeter, A. Harv Mahan, Howard M. Branz, and Qi Wang

JOINTSESSION:

AMOLED BACKPLANEELECTRONICS

* Backplane Requirements for Active Matrix OrganicLight Emitting Diode Displays 373

Arokia Nathan, Denis Striakhilev, Reza Chaji,Shahin Ashliani, Czang-Ho Lee, Andrei Sazonov,John Robertson, and William Milne

Amorphous Silicon 2-TFT Pixel Circuits on Stainless

Steel Foils 389

Alex Z. Kallamis, I-Chun Cheng, Yongtaek Hong,and Sigurd Wagner

SENSORS

* Amorphous Silicon as an Active Material in OpticalResonators 397

Dennis Hohlfeld and Hans Zappe

Band Gap Engineering and Electrical Field Tailoring for

Voltage Controlled Spectral Sensitivity 403

M. Vieira, P. Louro, A. Fantoni, M. Fernandas,

G. Lavarcda, and C.N. Carvalho

Image Sensors Based on Thin-Film on CMOS Technology:Additional Leakage Currents due to Vertical Integrationof the a-Si:H Diodes 409

C. Miazza, N. Wyrsch, G. Choong, S. Dunand, C. Ballif,

A. Shah, Nicolas Blanc, R. Kaufmann, F. Lustenberger,D. Moraes, M. Despeisse, and P. Jarron

Role of the Oxide Layer on the Performances of a-Si:H

Schottky Structures Applied to PDS Fabrication 415

Hugo Aguas, Luis Pereira, Daniel Costa, Leandro Raniero,Elvira Fortunato, and Rodrigo Martins

*Invited Paper

xii

Un-Cooled Micro-Bolometer With Sandwiched Thermo-

Sensing Layer Based on Ge Films Deposited by Plasma 421

Andrey Kosarev, Mario Moreno, Alfonso Torres, and

Roberto Ambrosio

FLEXIBLE ELECTRONICS

Hot-Wire CVD a-Si:H TFT on Plastic Substrates 429

F. Taghibakhsh and K.S. Karim

Self-Aligned Thin Film Transistor Fabrication With an

Ultra Low Temperature Polycrystalline Silicon Process

on a Benzocyclobutene Planarized Stainless Steel Foil

Substrate 435

Jaehyun Moon, Dong-Jin Park, Choong-Heui Chung,Yong-Hae Kim, Sun Jin Yun, Jung Wook Lim, and

Jin Ho Lee

Nano-Crystalline Silicon Thin Film Transistors on PET

Substrates Using a Hydrogenation-Assisted Metal-Induced

Crystallization Technique 441

Ashkan Behnam, Saber Haji, Farshid Karbassian,Shams Mohajerzadeh, Aida Ebrahimi, Yaser Abdi,

and Michael D. Robertson

TFTSTABILITY

* Mechanisms for Defect Creation and Removal in

Hydrogenated and Deuterated Amorphous Silicon

Studied Using Thin Film Transistors 449

Andrew J. Flewitt, Shufan Lin, William I. Milne,

Ralf B. Wehrspohn, and Martin J. Powell

Defect States in Excimer-Laser Crystallized Single-GrainTFTs Studied With Isothermal Charge Deep-Level Transient

Spectroscopy461

V. Nadazdy, V. Rana, R. Ishihara, S. Lanyi, R. Durny,

J.W. Metselaar, and C.I.M. Beenakker

* Invited Paper

xm

Effect of Light Illumination on Threshold Voltage and

Sub-Threshold Slope of Amorphous Silicon Thin Film

Transistors • 467

Lihong (Heidi) Jiao, Christopher R. Wronski, and

Thomas N. Jackson

Post Deposition Ultraviolet Treatment of Silicon Nitride

Dielectric: Modeling and Experiment 473

Vladimir Zubkov, Mihaela Balseanu, Li-Qun Xia, and

Hichem M'Saad

NOVEL DEVICESAND FILMS

* Application of Thin-Film Amorphous Silicon to Chemical

Imaging 481

Tatsuo Yoshinobu, Werner Moritz, Friedhelm Finger,and Michael J. Schoening

Performance of Thin-Film a-Si:H Microresonators in

Dissipative Media ..491

Teresa Adrega, D.M.F. Prazeres, V. Chu, and

J.P. Conde

Dynamic Measurements of MEMS-Based Field Effect

Transistors Using Scanning Capacitance Microscopy 497

M.L. Anderson, R.W. Young, and C.Y. Nakakura

Combination of Metal Nano-Imprint and Excimcr Laser

Annealing for Location Control of Si Thin-Film Grain 503

Gou Nakagawa and Tanemasa Asano

METAL-INDUCED, LASER-INDUCED,AND OTHER CRYSTALLIZATION TECHNIQUES

Polysilicon Films Formed on Alumina by AluminiumInduced Crystallization of Amorphous Silicon 511

Elienne Pihan, Abdelilah Slaoui, and Claude Maurice

Epitaxial Silicon Thin Films by Low TemperatureAluminum Induced Crystallization of Amorphous Silicon.. 517

Khalil Sharif, Husam H. Abu-Safe, Hameed A. Naseem,William D. Brown, Mowafak Al-Jassim, and Ram Kishore

Invited Paper

xiv

Low Temperature Poly-Si Sputtering Deposition ThroughMetal-Induced Crystallization and Its Application 523

Hsiu-Wu Guo, Chen-Luen Shin, Joe Ketterl, andScotl Dunham

Characterization of Nickel Induced Crystallized Silicon

by Spectroscopic Ellipsometry 529

Luis Pereira, Hugo Aguas, Manfred Beckers,Rui M.S. Martins, Elvira Fortunato, and

Rodrigo Martins

Metal-Induced Nickel Silicide Nanowire Growth Mechanism

in the Solid State Reaction 535

Joondong Kim, Jong-Uk Bae, Wayne A. Anderson,

Hyun-Mi Kim, and Ki-Bum Kirn

Fabrication of Location-Controlled Silicon Crystal Grains

by Combining Excimer Laser Irradiation With Nanometer-

Sized a-Si 541

Chun-Chien Tsai, Ting-Kuo Chang, Hsiu-Hsin Chen,

Bo-Ting Chen, and Huang-Chung Cheng

Analytical Studies of the Capping Layer Effect on Aluminum

Induced Crystallization of Amorphous Silicon 547

Husam H. Abu-Safe, Abul-Khair M. Sajjadul-lslam,Hameed A. Naseem, and William D. Brown

Fabrication of Poly-Silicon Thin Films on Glass and

Flexible Substrates Using Laser Initiated Metal Induced

Crystallization of Amorphous Silicon 553

Husam H. Abu-Safe, Hameed A. Naseem, and

William D. Brown

Preparation of Large, Location-Controlled Si Grains

by Excimer Laser Crystallization of a-Si Film Sputteredatl00°C 559

M. He, E.J.J. Neihof, Y. Van Andel, H. Schellevis,

R. Ishihara, J.W. Metselaar, and C.I.M. Beenakker

Low Thermal Budget Techniques for Controlling Stress in

Sit.xGex Deposited at 210°C 565

Sherif S. Sedky, Omar Mortagy, and Ann Witvrouw

xv

Thermal and Stress Modeling for the Flash LampCrystallization ofAmorphous Silicon Films 571

Mark P. Smith, Richard A. McMahon, Keith A. Seffen,

Dieter Panknin, Matthias Voelskow, and Wolgang Skorupa

Fabrication of Crystallized Si Film Deposited on a

Polycrystalline YSZ Film/Glass Substrate at 500°C 577

Susumu Horita, Keisuke Kanazawa, Kensuke Nishioka,

Koichi Higashimine, and Mikio Koyano

Correlation Between Annealing Temperature and

Crystallinity of Si Films Prepared by Thermal Plasma

Jet Crystallization Technique 583

Hirotaka Kaku, Seiichiro Higashi, Tatsuya Okada,Hideki Murakami, and Seiichi Miyazaki

THIN FILM TRANSISTORS

Improvement of Threshold Voltage DegradationCharacteristics of a-Si:H TFT by Pre-Electrical

Bias-Aging for AMOLED Display 591

Jae-Hoon Lee, Sang-Geim Park, Kwang-Sub Shin,Min-Koo Han, Joon-Chul Goh, Jong-Moo Huh,Joonhoo Choi, and Kyuha Chung

Bias Stress Stability of Asymmetric Source-Drain a-Si:H

Thin Film Transistors 597

Kwang-Sub Shin, Jae-Hoon Lee, Won-kyu Lee,

Sang-Geun Park, and Min-Koo Han

Ambipolar Thin-Film Transistors Fabricated by PECVD

Nanocrystalline Silicon 603

Czang-Ho Lee, Andrei Sazonov, Mohammad R.E. Rad,G. Reza Chaji, and Arokia Nathan

An Asymmetric Dual Gate Poly-Si TFTs for ImprovingHot Carrier Stress Stability and Kink Effect Suppression 609

Joong Hyun Park, Woo Jin Nam, Jae Hoon Lee, and

Min Koo Han

P Channel MOSFET Devices in Nanocrystalline Silicon 615

Durga P. Panda, Max Noack, and Vikram Dalai

xvi

A Novel Self-Aligned Field Induced Drain PolycrystallineSilicon Thin Film Transistor Fabricated by Using a Selective

Side Etch Process 621

Ta-Chuan Liao, Chun-Yu Wu, Feng-Tso Chien,Chun-Chien Tsai, Hsiu-Hsin Chen, Chung-Yuan Kung,and Huang-Chung Cheng

Nanocrystalline Silicon Films Deposited by RF PECVD

for Bottom-Gate Thin-Film Transistors 627

Mohammad Reza Esmaeili Rad, Czang-Ho Lee,

Andrei Sazonov, and Arokia Nathan

SOLAR CELLS I

Boron Doped Polycrystalline Silicon Produced by

Step-by-Step XeCl Excimer Laser Crystallization 635

Rosari Saleh and Norbert H. Nickel

Thin-Film Polycrystalline-Silicon Solar Cells on Ceramic

Substrates Made by Aluminum-Induced Crystallizationand Thermal CVD 641

Ivan Gordon, Dries Van Gestel, Lode Carnel,

Kris Van Nieuwenhuysen, Guy Beaucarne, and

Jef Poortmans

Local Current Flow in Mixed-Phase Silicon Solar Cells and

Correlation to Light-Induced Open-Circuit Voltage Enhancement 647

Baojie Yan, C.-S. Jiang, H.R. Moutinho, M.M. Al-Jassim,

Jeffrey Yang, and Subhendu Guha

OTHER DEVICES

Light Filtering Properties in a-SiC:H Multilayer Structures:

A SPICE Model 655

J. Martins, M. Vieira, M. Fernandes, P. Louro,

and A. Fantoni

Silicon Etching Study in a RT-CVD Reactor With the HC1/H2

Gas Mixture 661

Nicolas Loubet, Alexandre Talbot, and Didier Dutartre

xvn

SOLAR CELLS II

* Novel Approaches of Light Management in Thin-Film

Silicon Solar Cells 669

J. Krc, M. Zeman, A. Campa, F. Smole, and M. Topic

Influence of Defect Post-Deposition Treatments on poly-SiThin-Film Solar Cells on Glass Grown by ECRCVD 681

Bjorn Rau, Jens Schneider, Erhard Conrad, and

Stefan Gall

* Production Technologies of Film Solar Cell 687

Akihiro Takano, Katsuya Tabuchi, Masayoshi Uno,

Masayuki Tanda, Takehito Wada, Makoto Shimosawa,Yasushi Sakakibara, Shinji Kiyofuji, Hironori Nishihara,Hirofumi Enomoto, and Tomoyoshi Kamoshita

SOLAR CELLS III

* Highly Efficient Microcrystalline Silicon Solar Cells DepositedFrom a Pure SiH4 Flow 701

M.N. van den Donker, B. Rech, R. Schmitz, J. Klomfass,G. Dingemans, F. Finger, L. Houben, W.M.M. Kesscls,and M.C.M. van de Sandcn

Temperature Dependence of Dark Current-VoltageCharacteristics of Hydrogenated Amorphous and

Nanocrystalline Silicon Based Solar Cells 713

Baojie Yan, Jeffrey Yang, and Subhendu Guha

High Quality Hot-Wire Microcrystalline Silicon for

Efficient Single and Multijunction n-i-p Solar Cells 719

Robert L. Stolk, Hongbo Li, Ronald H. Franken,

Karine H.M. Van der Werf, Jatindra K. Rath,and Ruud E.I. Schropp

Thin-Film Polycrystalline-Silicon Solar Cells on

High-Temperature Glass Based on Aluminum-

Induced Crystallization of Amorphous Silicon 725

Dries Van Gestel, Ivan Gordon, Lode Carnel,Linda R. Pinckney, Alexandre Mayo let,

Jan D'Haen, Guy Beaucarne, and Jef Poortmans

*Invited Paper

xviu

17.8%-Efficient Amorphous Silicon Heterojunction Solar

Cells on/>-type Silicon Wafers 731

Tihu Wang, Matt P. Page, Eugene Iwaniczko, Yueqin Xu,

Yanfa Yan, Lorenzo Roybal, Dean Levi, Russell Bauer,Howard M. Branz, and Qi Wang

Author Index 737

Subject Index 743

xix