Amorphous and Microcrystalline Silicon Technology—1998assets.cambridge.org/97811074/13603/frontmatter/... · Internal Electric Field Profile of a-Si:H and a-SiGe:H Solar Cells 187

Amorphous and MicrocrystallineSilicon Technology—1998

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Cambridge University Press978-1-107-41360-3 - Materials Research Society Symposium Proceedings: Volume 507:Amorphous and Microcrystalline Silicon Technology—1998Editors: Ruud Schropp, Howard M. Branz, Michael Hack, Isamu Shimizu and Sigurd WagnerFrontmatterMore information

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 5 0 7

Amorphous and MicrocrystallineSilicon Technology—1998

Symposium held April 14-17,1998,San Francisco, California, U.S.A.

EDITORS:

Ruud SchroppUtrecht University

Utrecht The Netherlands

Howard M. BranzNational Renewable Energy Laboratory

Golden, Colorado, U.S.A.

Michael HackdpiX,A Xerox Company

Palo Alto, California, U.S.A.

Isatnu ShimizuTokyo Institute of Technology

Yokohama, Japan

Sigurd WagnerPrinceton University

Princeton, New Jersey, U.S.A.

IMIRTS1Materials Research Society

Warrendale, Pennsylvania






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CONTENTS

Preface xix

Materials Research Society Symposium Proceedings xxi

PART I: AMORPHOUS AND POLYCRYSTALLINETHIN-FILM TRANSISTORS

•Hybrid Amorphous and Polycrystalline Silicon Devicesfor Large-Area Electronics

P. Mei, J.B. Boyce, D.K. Fork, G. Anderson, J. Ho, J. Lu,M. Hack, and R. Lujan

a-Si:H Thin-Film Transistors on Rollable 25-jim Thick Steel Foil 13E.Y. Ma and S. Wagner

Reaction Processes for Low Temperature (<150°C) PlasmaEnhanced Deposition of Hydrogenated Amorphous SiliconThin-Film Transistors on Transparent Plastic Substrates 19

Gregory N. Parsons, Chien-Sheng Yang, Tonya M. Klein,and Laura Smith

Stepped Gate Polysilicon Thin-Film Transistor for LargeArea Power Applications 25

J. Aschenbeck, Y. Chen, F. dough, Y.Z. Xu, E.M. Sankara Narayanan,and W.I. Milne

Transistors With a Profiled Active Layer Made by Hot-Wire CVD 31H. Meiling, A.M. Brockhoff, J.K. Rath, and R.E.I. Schropp

"High Conductivity Gate Metallurgy for TFT/LCD's 37Peter M. Fryer, E. Colgan, E. Galligan, W. Graham, R. Horton,L. Jenkins, R. John, Y. Kuo, K. Latzko, F. Libsch, A. Lien,R. Nywening, R. Polastre, M.E. Roth well, J. Wilson, R. Wisnieff,and S. Wright

'Recent Progress of Low-Temperature Poly-Si TFT Technology 47Kiyoshi Yoneda

Photo-Leakage-Current Analysis of Poly-Si TFT by Using RearIrradiation OBIC Method 55

Masatoshi Wakagi, Tatsuya Ookubo, Masahiko Ando,Genshiro rxawachi, Akio Mimura, and Tetsuroh Minemura

Interconnect Capacitance Extraction in Large-Area a-SiImaging Systems 61

H.H. Pham and A. Nathan

'Invited Paper






Electrode Interdependence and Hole Capacitance in theCapacitance-Voltage Characteristics of HydrogenatedAmorphous Silicon Thin-Film Transistors 67

tiyuk-Ryeol Park and J. David Cohen

Effect of NH3/SiH4 Gas Ratios of Top Nitride Layer onStability and Leakage in a-Si:H Thin-Film Transistors 73

KV.R. Murthy, Q. Ma, A. Nathan, and S.G. Chamberlain

Analysis of Drain Currents During Switching Off a-Si:H BasedThin-Film Transistors 79

F. Lemmi and R.A. Street

Application of Thin-Film Micromachining on Glass 85M. Boucinha, V. Chu, and J.P. Conde

A Fully Self-Aligned Amorphous Silicon TFT Technology forLarge Area Image Sensors and Active-Matrix Displays 91

M.J. Powell, C. Glasse, J.E. Curran, J.R. Hughes, LD. French,and B.F. Martin

PART II: SOLAR CELLS

"Material Issues in the Commercialization of AmorphousSilicon Alloy Thin-Film Photovoltaic Technology 99

S. Guha, J. Yang, A. Banerjee, and S. Sugiyama

Spectral Response and Loss Mechanisms in AmorphousSilicon Solar Cells Determined by Photothermal DeflectionSpectroscopy 107

N. tiohne, R. Carius, and H. Wagner

Preparation of a-Si:H and a-SiGe:H i-Layers for nip SolarCells at High Deposition Rates Using a Very High FrequencyTechnique 113

S.J. Jones, X. Deng, T. Liu, and M. Izu

H Out-Diffusion and Device Performance in n-i-p SolarCells Utilizing High-Temperature Hot Wire a-Si:H i-Layers 119

A.fi. Mahan, R.C. Reedy, Jr., E. Iwaniczko, Q. Wang, B.P. Nelson,Y. Xu, A.C. Gallagher, ti.M. Branz, R.S. Crandall, J. Yang, and S. Guha

Effects of Band Offsets on a-SiC:H/c-Si HeterojunctionSolar Cell Performance 125

M.W.M. van Cleef, FA. Rubinelli, and R.E.I Schropp

*Thin Film Poly-Si Solar Cell on Glass Substrate Fabricatedat Low Temperature 131

Kenji Yamamoto, Masashi Yoshimi, Takayuki Suzuki, Yuko Tawada,Yoshifumi Okamoto, and Akihiko Nakajima

*lnvited Paper

VI






Microcrystalline Single-Junction and Micromorph TandemThin Film Silicon Solar Cells 139

J. Meier, ti. Keppner, S. Dubail, U. Kroll, P. Torres, P. Pernet,Y. Ziegler, J.A. Anna Selvan, J. Cuperus, D. Fischer, and A. Shah

"Development of Stable a-Si/a-SiGe Tandem Solar CellSubmodules Deposited by a Very High Hydrogen Dilutionat Low Temperature 145

Masaki Shima, Masao Isomura, Eiji Maruyama, Shingo Okamoto,fiisao fiaku, Kenichiro Wakisaka, Seiichi Kiyama, and Shinya Tsuda

Effect of Excitation Frequency on the Performance of AmorphousSilicon Alloy Solar Cells 157

J. Yang, S. Sugiyama, and S. Guha

Excess Charge Carrier Kinetics in Amorphous Silicon/CrystallineSilicon Heterojunctions 163

5. v. Aichberger, O. fiahneiser, J. Loffler, ti. Feist, and M. Kunst

New Method to Determine the a-Si:H Diode SeriesResistance by Noise Measurements 169

F. Blecher, K. Seibel, M. flillebrand, and M. Bohm

Photo- and Dark-Current Noise in a-Si:H pin Diodes atForward and Reverse Bias 175

F. Blecher, K. Seibel, and M. Bohm

Electric Field Profile in jic-Si:H p-i-n Devices 181n. Wyrsch, ri. Beck, J. Meier, P. Torres, and A. Shah

Internal Electric Field Profile of a-Si:H and a-SiGe:H Solar Cells 187Xinhua Geng, Lei Wu, Kent Price, Xunming Deng, Qi Wang,and Daxing Man

Photocurrent in Microcrystalline Hydrogenated Siliconp-i-n Devices 193

M. Fernandes, M. Vieira, A. Macarico, S. Koynov, A. Fantoni,and R. Schwarz

Stable Solar Cells Prepared from Dichlorosilane 199Y. Yamamoto, W. Futako, K. Fukutani, M. tiagino, T. Sugawara,T. Kamiya, CM. Fortmann, and I. Shimizu

Narrow Bandgap Amorphous Silicon-Based Solar CellsPrepared by High-Temperature Processing 205

M. Kambe, Y. Yamamoto, ft. Fukutani, T Kamiya, CM. Fortmann,and I Shimizu

Extremely Narrow Bandgap, -1.50eV, Amorphous Silicon 211K. Fukutani, T. Sugawara, W. Futako, T. Kamiya, CM. Fortmann,and I. Shimizu

*lnvited Paper

VII






PART III: COLOR AND X-RAY SENSORS. NOVEL DEVICES.LUMINESCENCE. AND SENSIT1ZATION

A Novel Room Temperature Infrared Detector UsingMicro-Compensated Amorphous Silicon 219

D. Caputo, G. de Cesare, A. Nascetti, and F. Palma

Stabilized Three-Color piinip Sensor for High IlluminationConditions 225

D. Knipp, H. Stiebig, and ti. Wagner

Material Aspects of a-SiN:H based 2-D Direct X-raySensor Array 231

/. Popov, G. Van Doorselaer, A. Van Calster, ti. De Smet,E. Boesman, and F. Callens

Process Integration of a-Si:H Schottky Diode and Thin-FilmTransistor for Low-Energy X-ray Imaging Applications 237

B. Park, R.V.R. Murthy, A. Sazonov, A. Nathan, and S.G. Chamberlain

Temperature Dependence of Electroluminescence FromNanocrystalline Silicon Thin Films 243

T. Toyama, Y. Kotani, A. Shimode, K. Shimizu, and ti. Okamoto

Optical Properties of Si Nanocrystals Formed in SiO2 byIon Implantation 249

C.W. White, S.P. Withrow, A. Meldrum, J.D. Budai, D.M. Hembree,J.G. Zhu, D.O. Henderson, and S. Prawer

Erbium-Doped a-Si:H Films Fabricated by Standard PECVDUsing Metalorganics 255

n.A. Feoktistov, V.G. Golubev, A.V. Medvedev, and A.B. Pevtsov

Carbon Rich a-Sii-xCx:H Films: An Investigation on RadiativeRecombination Properties 261

F. Giorgis, F. Giuliani, C.F. Pirri, P. Mandracci, P. Ray a,R. Reitano, L Calcagno, and P. Musumeci

A Study of Silicon Suboxide Thin Films by Photoluminescence 267F. Wang, D.M. Wolfe, B.J. Hinds, G. Lucovsky, R. Platz, andS. Wagner

The Tail States as Sensitizing Recombination Centers forHoles Lifetime in a-Si:H 273

Y. Lubianiker, R. Rapaport, I. Balberg, L. Fonseca, andS.Z. Weisz

*Photo and Electroluminescence of a-Si:Er:H 279Leandro R. Tessler and Ana Carola Iniguez

*lnvited Paper

vw






Variation of Bandgap in a Nanocrystaltine Silicon as Monitoredby Subgap Photoluminescence 291

A. Kaan Kalkan, Sanghoon Bae, Shangcong Cheng, Yaozu Wang,and Stephen J. Fonash

Annealing Effect on the Activation of 1.54 jum Emission FromErbium in a-Si:H Matrix Prepared by DC Magnetron Sputtering 297

A.A. Andreev, V.G. Golubev, A.V. Medvedev, A.B. Fevtsov,and V.B. Voronkov

Role of the Collecting Resistive Layer on the StaticCharacteristics of 2-D a-Si:H Thin-Film Position SensitiveDetector 303

E. Fortunato and R. Martins

Design of ATCD Three-Color Detector for Color Detectionin Transient Regime 309

F. Irrera, F. Falma, F. Lemmi, and M. Diotallevi

Deposition and Evaluation of Microcrystalline Silicon forUse in Photoconducting Antennas 315

Sripathi Yarasi and Tajinder Manku

X-ray Sensing Properties of a Lead Oxide PhotoconductorCombined With an Amorphous Silicon TFT Array 321

A. Brauers, Pi. Conrads, G. Frings, V. Schiebel, M.J. Fowell,and C. Glasse

*lmage Sensors in TFA Technology—Status and Future Trends 327M. Bohm, F. Blecher, A. Eckhardt, K Seibel, B. Schneider,J. Sterzel, S. Benthien, H. Keller, T. Lule, F. Rieve, M. Sommer,B. van Uffel, F. Librecht, R.C. Lind, L. Humm, U. Efron, and E. Roth

Programmable 3-Dimensional Memories Based onCurrent Induced Conductivity in Hydrogenated AmorphousSilicon Nitride 339

J.M. Shannon, S.F. Lau, and B.J. Sealy

First Monolithic Tandem Photovoltaic-PoweredElectrochromic Smart Window 345

W. Gao, S.H. Lee, Y. Xu, S. Morrison, D.K. Benson, andti.M. Branz

Amorphous Silicon/Crystalline Silicon Heterojunctions inNuclear Radiation Detector Fabrication 351

J.T. Walton, M. Amman, G. Conti, W.S. Hong, P.n. Luke,and F.F. Ziemba

Wide Bandgap a-Si:H Based High Gain Vidicon DevicesPrepared by Chemical Annealing 357

W. Futako, T. Sugawara, T. Kamiya, CM. Fortmann, andI. Shimizu

Invited Paper






PART IV: DEVICE MODELLING AND PARAMETER EXTRACTION

A Polysilicon TFT Parameter Extractor 365O.K.B. Lui, S. W.B. Tarn, and P. Migliorato

Band-Offset Determination for Intrinsic a-Si/p+ |ic-Si orIntrinsic a-Si/n+ jic-Si Heterostructure 371

Hong Zhu and Stephen J. Fonash

Investigation of the Electronic Transport in pin Solar CellsBased on Microcrystalline Silicon by 2-D Numerical Modelling 377

J. Zimmer, H. Stiebig, and H. Wagner

Small-Signal Admittance of Forward-Biased a-Si:H p+-i-n+

Diodes by Time Domain Analysis 383F. Lemrni and N.M. Johnson

Investigation of a-Si:H pii(i)n Color Detector Operation 389M. Topic, F. Smole, and J. Furlan

'Computer Simulation for Solar Cell Applications: Understandingand Design 395

Hong Zhu and Stephen J. Fonash

Defect Distributions in Doped and Undoped a-SiGe:H Alloys 403Helmut Stiebig, Frank Siebke, Reinhard Carius, andJosef Klomfafi

Device Modelling of a-Si:H Alloy Solar Cells: CalibrationProcedure for Determination of Model Input Parameters 409

M. Zeman, R.A.C.M.M. van Swaaij, E. Schroten, L.L.A. Vosteen,and J. W. Metselaar

Compact Spice Modelling and Design Optimization ofLow Leakage a-Si:H TFTs for Large-Area Imaging Systems 415

R. V.R. Murthy, D. Fereira, B. FarK A. Nathan, andS.G. Chamberlain

PART V: GROWTH. ALLOYS. AND CLATHRATES

Analysis of Radical Reaction on Growing Surface DuringSi Epitaxy by Photo-CVD 423

Katsuya Abe, Tatsuro Watahiki, Akira Yamada, andMakoto Konagai

Enhanced Crystallinity of Microcrystalline Silicon ThinFilms Using Deuterium in Reactive Magnetron SputterDeposition at 230°C 429

J.E. Gerbi, F. Voyles, J.M. Gibson, and J.R. Abelson

*lnvited Paper






Guide for Low-Temperature and High-Rate Depositionof Device Quality Polysilicon Films by Cat-CVD Method 435

Akira Heya, Kazuhisa Tiakata, Akira Izumi, andIiideki Matsumura

Influence of Plasma Chemistry on the Properties ofAmorphous (Si,Ge) Alloy Devices 441

Vikram L. Dalai, Tim Maxson, and Sohail Maroon

Hydrogenated Amorphous Silicon Germanium AlloysGrown by the Hot-Wire Chemical Vapor DepositionTechnique 447

Brent P. nelson, Yueqin Xu, D.L. Williamson, Bolko von Roedern,Alice Mason, Stephan Meek, A.M. Mahan, S.E. Schmitt,A. C. Gallagher, John Webb, and Robert Reedy

Kinetics of Light-Induced Defect Formation and Annealingin Hydrogenated Amorphous Silicon Alloyed with Sulfur 453

Baojie Yan, Shenlin Chen, and P.C. Taylor

Hydrogenated Amorphous Silicon Alloyed with Selenium 459Shenlin Chen, P.C. Taylor, and J.M. Viner

Refinement of PLAS Samples by Using AFM Image andFirst Observation of PLAS Signals on Amorphous CarbonNitride a-CNx Films 465

M. Furukawa, S. Tiitta, M. Mioki, T. Iwasaki, T. Itoh, andS. Nonomura

Fluorinated Silicon Nitride Film Deposited at Low Temperaturesfrom SiH4-SiF4-NH3 471

Y-B. Park, S. Rhee, J-M. Choi, C-W. Kim, and J.M. Suok

The Effect of Ion-Bombardment on the Formation of VoidsDuring Deposition of a-Ge:H 477

F. Origo, P. Mammer, D. Comedi, and I. Chambouleyron

Silicon Clathrates: Synthesis and Characterization 483Ganesh K. Ramachandran, Jason Diefenbacher, Otto F. Sankey,Renu Sharma, Robert F. Marzke, Michael O'Keeffe, Jan Gryko,and Paul F. McMillan

Internal Stress and Optical Degradation in a-Si:H Depositedon Glass Substrates 487

Jun-ichi Tiakata, Tadayuki Miyako, Shozo Imao, and Atsutoshi Doi

Stability Improvement of a-Si:H Films Deposited in SQWM-55 kHzGlow Discharge Plasma 493

B.G. Budaguan and A.A. Aivazov

Deposition of Nanostructured Silicon Thin Films by Means ofthe Selective Contribution of Particles in PECVD 499

J. Costa, P. Roura, P. Roca i Cabarrocas, G. Viera, and E. Bertran






Microcrystalline Silicon Growth: Deposition Rate LimitingFactors 505

S. tiamma, D. Colliquet, and P. Roca i Cabarrocas

In Situ Study of the Optoelectronic Properties of Very Thinp-Type jic-Si:H Films and the Potential Profile at thep-(|uc-Si:H)/i-<a-Si:H) Interface 511

5. Mamma and P. Roca i Cabarrocas

Performance of |uc-Si:H Solar Cells with Amorphous p-Layer 517Frank Siebke, Shigeo Yata, Yoshihiro riishikawa, andMakoto Tanaka

The Structural Evolution of a-Si:H Films Prepared by PulseRF Power Modulation with Hydrogen and Helium Dilution 523

Yeu-Long Jiang, Min-Chang Lee, and Shieng-Huai Chen

Hydrogen in a-Si:H Deposited by an Expanding ThermalPlasma: A Temperature, Growth Rate and Isotope Study 529

W.M.M. Kessels, M.C.M. van de Sanden, R.J. Severens,LJ. van Ijzendoorn, and D. C. Schram

Longitudinal Vibrational Absorption Modes of HydrogenatedAmorphous Silicon Nitride Thin Films 535

Tong Li and Jerzy Kanicki

Large Area Deposition of Amorphous and MicrocrystallineSilicon by Very High Frequency Plasma 541

L. Sansonnens, A.A. Howling, and Ch. tioilenstein

*Dust Particle Diagnostics in RF Plasma Deposition of Siliconand Silicon Oxide Films 547

Ch. tioilenstein, A.A. howling, C. Courteille, J-L. Dorier,L. Sansonnens, D. Magni, and ti. Muller

High Deposition Rate Amorphous Silicon Solar Cells andTtiin Film Transistors Using the Pulsed Plasma PECVD Technique 559

Scott Morrison, Jianping Xi, and Arun Madan

Comparison of VHF, RF and DC Plasma Excitation fora-Si:H Deposition With Hydrogen Dilution .565

R. Platz, C. tiof, S. Wieder, B. Rech, D. Fischer, A. Shah,A. Payne, and S. Wagner

Scanning Tunneling Microscopy Study of the Growth Mechanismfor Hydrogenated Amorphous Silicon Produced by PlasmaEnhanced Chemical Vapor Deposition 571

A.J. Flewitt, W.I. Milne, J. Robertson, A.W. Stephenson, andM.E. Welland

Effect of Plasma Treatment on Crystallization Behaviorof Amorphous Silicon Films 577

K. Pangal, J.C. Sturm, and S. Wagner

*lnvited Paper

XII






PART VI: METASTABILITY. HYDROGEN. ATOMIC.AND ELECTRONIC STRUCTURE

*Low-Temperature Vibrational Properties of AmorphousSilicon 585

R.S. Crandall, E. Iwaniczko, A.ti. Mahan, X. Liu, and R.O. Pohl

Molecular Hydrogen in Hot-Wire Hydrogenated AmorphousSilicon 595

Xiao Liu, E. Iwaniczko, R.O. Pohl and R.S. Crandall

Absorption Strengths of Si-H Vibrational Modes inHydrogenated Silicon 601

W. Beyer and M.S. Abo Ghazala

Performances of Nano/Amorphous Silicon Films Producedby Hot Wire Plasma Assisted Technique 607

/. Ferreira, H. Aguas, L. Mendes, F. Fernandes, E. Fortunato,and R. Martins

NMR Detection of New Hydrogen Populations in Amorphousand Crystalline Silicon 613

R. Borzi, T.S. Cull, P.A. Fedders, D.J. Leopold, R.E. Horberg,J.B. Boyce, N.M. Johnson, S.E. Ready, and J. Walker

Changes in Short- and Medium-Range Order in a-Si:H Inducedby Light-Soaking, Pseudodoping and Doping With Boron 619

O.A. Golikova, M.M. Kazanin, V.Kh. Kudoyarova, G.J. Adriaenssens,and A. Eliat

Hydrogen's Effect on Stability of Undoped a-Si:H UnderLight Soaking 625

O.A. Qolikova, M.M. Kazanin, A.Fi. Kuznetsov, V.Kh. Kudoyarova,G.J. Adriaenssens, W. Grevendonk, and A. Eliat

Grazing Incidence Measurements of PolarizedElectroabsorption and Light Soaking Effect on AmorphousSilicon Based Solar Cells 631

Lin Jiang, Eric A. Schiff, Qi Wang, S. Guha, and J. Yang

Identification of Vacancy-Like Defects in High-Rate Growna-Si Before and After Light Soaking by VEPAS 637

X. Zou, Y.C. Chan, D.P. Webb, Y.W. Lam, S.H. Lin, F.Y.M. Chan,Y.F. Hu, X. Weng, CD. Bel ing, and S. Fung

Interface Characterization and Internal Electric FieldEvaluation of a-Si:H pin Solar Cell by Variable EnergyPositron Annihilation Spectroscopy 643

X. Zou, Y.C. Chan, D.P. Webb, Y.W. Lam, F.Y.M. Chan, S.H. Lin,Y.F. Hu, CD. Beling, and S. Fung

Metastability of Phosphorus- or Boron-Doped a-Si:H Films 649P. St'ahel, P. Roca i Cabarrocas, P. Sladek, and M.L. Theye

*lnvited Paper

XIII






The Role of Charged Defects in Current Transport ThroughHydrogenated Amorphous Silicon Alloys 655

S.P. Lau, J.M. Shannon, B.J. Sealy, and J.M. Marshall

Electron and Hole Transient Currents in HydrogenatedAmorphous Silicon and Some Alloys Measured by thePhotoconductive Time-of-Flight Technique 661

Astrid Eliat, Guy Andhaenssens, and Baojie Yan

Microscopic Nature of Nature Light Induced Defects 667R. Biswas and B.C. Pan

Atomic-Scale Analysis of Plasma-Enhanced ChemicalVapor Deposition from SiH4/H2 Plasmas on Si Substrates 673

Shyam Ramalingam, Dimitrios Maroudas, and Eray S. Aydil

Concentration Dependence of Hydrogen Diffusion inHydrogenated Silicon 679

W. Beyer and U. Zastrow

Light-Induced Changes of Si-H Bond Absorption inHydrogenated Amorphous Silicon 685

Quozhen Yue, Liangfan Chen, Qi Wang, Eugene Iwaniczko,Quanglin Kong, Jonathan Baugh, Yue Wu, and Daxing Man

Wandering Dangling Bond Model for Staebler-Wronski Effects 691Masatoshi lkeda, Akio Kitagawa, and Masakuni Suzuki

*Light-Excited Structural Instability of a-Si:H 697G.L. Kong, D.L. Zhang, G.Z. Yue, Y.Q. Wang, and X.B. Liao

Hydrogen Collision Model of the Staebler-Wronski Effect:Microscopies and Kinetics 709

Howard M. Branz

Bonded Hydrogen Atom Participation in MetastableDefect Formation in Hydrogenated Amorphous Silicon 715

G. Lucovsky and H. Yang

PART VII: DEFECTS AND CHARGE TRANSPORT

Light-Induced Degradation Effects in a-Si:H Observedby Raman Scattering Measurements 723

P. Stradins, M. Kondo, N. liata, and A. Matsuda

Degradation Kinetics of Hydrogenated AmorphousSilicon: The Effect of Embedded Microcrystallites 729

Yoram Lubianiker, J. David Cohen, tiyun-Chul Jin,and John R. Abelson

*lnvited Paper

xiv






'Photoinduced Structural Changes in HydrogenatedAmorphous Silicon 735

K. Shimizu, T Tabuchi, K. tlattori, H. Kida, and H. Okamoto

Reduction of Neutral Dangling Bond Density by LightSoaking in Nanocrystalline Silicon 747

Takahiro Matsumoto, Yasuaki Masumoto, and Michio Kondo

Localized or Delocalized Electrons in Microcrystalline Silicon? 751J. Miiller, F. Finger, R. Carius, and H. Wagner

Pulsed ESR Studies on Microcrystalline Silicon 757C Malten, F. Finger, J. Miiller, and S. Yamasaki

Excitation Energy Dependence of Photoinduced Absorptionin Intrinsic a-Si:H 763

ri. Schultz, Z.V. Vardeny, and P.C. Taylor

The Electronic Structure, Metastability and Transport Propertiesof Optimized Amorphous Silicon-Germanium Alloys 769

Chih-Chiang Chen, Yoram Lubianiker, J. David Cohen, Jeffrey C. Yang,Subhendu Guha, Paul Wickboldt, and William Paul

The Intuitive Thermalization Model Compared to ExplicitMultiple Trapping Calculations 775

H. Feist, S.v. Aichberger, and M. Kunst

Deep Defect Relaxation in Hydrogenated AmorphousSilicon: New Experimental Evidence and Implications 781

J. David Cohen, Fan Zhong, Dae won Kwon, and C-C. Chen

ODMR Measurements of Microcrystalline Silicon 787C. Malten, R. Carius, F. Finger, and S. Yamasaki

Paramagnetic Defects in Undoped Microcrystalline SiliconDeposited by the Hot-Wire Technique 793

P. Kanschat, f\. Lips, R. Bruggemann, A. tlierzenberger,I. Sieber, and W. Fuhs

Possible Origin of Large Response Times and AmbipolarDiffusion Lengths in Hot-Wire-CVD Silicon Films 799

R. Schwarz, T. Murias, J.P. Conde, P. Brogueira, and V. Chu

Excitation Intensity Dependence of Light-Induced ElectronSpin Resonance in Hydrogenated Amorphous Silicon Films 805

Baojie Yan and P.C. Taylor

PART VIII: HETEROGENEOUS SILICON: FORMATION.PROPERTIES. AND DEVICES

Microcrystalline Silicon-Germanium Alloys for AbsorptionLayers in Thin Film Solar Cells 813

R. Carius, J. Folsch, D. Lundszien, L. tiouben, and F. Finger

*lnvited Paper

xv






The Origin of the Enhanced Optical Absorption in Hot WireMacrocrystalline Silicon 819

F. Diehl, B. Schroder, and H. Oechsner

Low Defect Density Microcrystalline-Si Deposited by theHot Wire Technique 825

A.ti. Mahan, M. Vanecek, A. Foruba, V. Vorlicek, R.S. Crandall,and D.L. Williamson

Influence of the H2 Dilution and Filament Temperature on theProperties of P-Doped Silicon Carbide Thin Films Producedby Hot-Wire Technique 831

/. Ferreira, H. Aguas, L. Mendes, F. Fernandas, E. Fortunate,and R. Martins

Changes in the Medium Range Order of a-Si:H Thin FilmsObserved by Variable Coherence TEM 837

J.M. Gibson, M.M.J. Treacy, P.M. Voyles, J.R. Abelson,and ti-C. Jin

*Role of Hydrogen for Microcrystalline Silicon Formation 843K. Saitoh, M. Kondo, M. Fukawa, T. Mshimiya, W. Futako,I. Shimizu, and A. Matsuda

"Plasma Deposition of Silicon Clusters: A Way to ProduceSilicon Thin Films With Medium-Range Order? 855

F. Roca i Cabarrocas

How Do Impurities Affect the Growth of |ic-Si:H? 867Toshihiro Kamei, Makoto Fukawa, Tatsuyuki nishimiya,Masao Isomura, Michio Kondo, and Akihisa Matsuda

Nucleation of p-Type Microcrystalline Silicon on AmorphousSilicon for n-i-p Solar Cells Using B(CH3)3 and BF3 DopantSource Gases 873

Joohyun Koh, H. Fujiwara, R.J. Koval, C.R. Wronski, andR.W. Collins

#Hot-Wire CVD Poly-Silicon Films for Thin-Film Devices 879J.K. Rath, F.D. Tichelaar, H. Meiling, and R.E.I. Schropp

Deposition of Highly Conductive n+ Silicon Film fora-Si:H Thin-Film Transistor 891

Yue Kuo and K. Latzko

Deposition, Defect and Weak Bond Formation Processesin a-Si:H 897

J. Robertson and M.J. Fowell

Microcrystalline Silicon n-i-p Solar Cells Deposited Entirelyby the Hot-Wire Chemical Vapor Deposition Technique 903

Qi Wang, Eugene Iwaniczko, A.ti. Mahan, and D.L. Williamson

*lnvited Paper

XVI






The Effect of Hydrogen Dilution on Hot-Wire Thin-FilmTransistors 909

J.P. Conde, M. Silva, and V. Chu

Effect of Filament Bias on the Properties of Amorphous andNanocrystalline Silicon From Hot-Wire Chemical VaporDeposition 915

fi.Pi. Wanka, R. Bruggemann, C. Kohler, I. Zrinscak, andM.B. Schubert

Electronic Properties of Hot-Wire Deposited NanocrystallineSilicon 921

R. Bruggemann, A. Hierzenberger, H.N. Wanka, and M.B. Schubert

The Influence of Electrons From the Filament on the MaterialProperties of Hydrogenated Amorphous Silicon Grown by theHot-Wire Chemical Vapor Deposition Technique 927

Brent P. Nelson, Qi Wang, Eugene Iwaniczko, A.H. Mahan,and R.S. Crandall

Structural Characterization and Crystallization Process ofNanostructured Silicon Thin Films Produced in Low-PressureSilane Plasma 933

G. Viera, P. Roca i Cabarrocas, J. Costa, S. Martinez, andE. Bertran

Real Time Spectroscopic Ellipsometry Studies of the SolidPhase Crystallization of Amorphous Silicon 939

H. Fujiwara, Joohyun Koh, Yeeheng Lee, C.R. Wronski,and R. W. Collins

Direct Nucleation and Selective Growth of Nuclei forHigh Crystallinity Poly-SiGe Thin Films on SiO2 Substrates 945

Jun-ichi Manna, Kunihiro Shiota, and Masaji Yamamoto

Thermochemistry of Silicon LPCVD Revisited WithKinetic Data 951

Constantin Vahlas and Elisabeth Blanquet

Raman and Spectroscopic Ellipsometry Studies ofP-Doped Poly-Si 957

Stefan Zollner, Ran Liu, Jim Christiansen, Wei Chen,Kathy Monarch, Tan-Chen Lee, Rana Singh, Jane Yater,Wayne M. Paulson, and Chris Feng

Facetting Growth of Low-Temperature Polycrystalline Siliconby ECR-CVD with Hydrogen Dilution Method 963

fi-L. tisiao, A-B. Yang, and H-L. Hwang

High-Quality Hydrogenated Amorphous Silicon FilmsWith Significantly Improved Stability 969

Shuran Sheng, Xianbo Liao, Zhixun Ma, Guozhen Yue,Yongqian Wang, and Guanglin Kong

XVII






Structural Properties of Polycrystalline Silicon FilmsFormed by Pulsed Rapid Thermal Processing 975

Yongqian Wang, Xianbo Liao, Hongwei Diao, Jie He,Zhixun Ma, Guozhen Yue, Shuran Sheng, Guanglin Kong,Yuwen Zhao, Zhongming Li, and Feng Yun

Polycrystalline Silicon Single Electron Island by ExcimerLaser Irradiation on a-Si Film 981

C-M. Park, J-fi. Jeon, MS. him, J-S. Yoo, and M-K. Man

Growth and Properties of Microcrystalline (Si,Ge):H Films 987Karl Erickson, Vikram L. Dalai, and George Chumanov

Silicon Nanowire: A New Shape of Crystalline Silicon 993Y.F. Zhang, Y.ti. Tang, Pi. Wang, C.S. Lee, D.P. Yu, L Bello,and S.T. Lee

Author Index 999

Subject Index 1005

xviii






PREFACE

The symposium "Amorphous and Microcrystalline Silicon Technology—1998" was the sixteenth in the MRS Spring Meeting series. The focus of thissymposium is no longer limited to hydrogenated amorphous silicon (a-Si:H),as researchers in the field are aware that the distinction between short- andmedium-range order, and between homogeneous and heterogeneoussemiconductor materials, is indeed difficult to maintain.

This symposium covered amorphous and microcrystalline silicon frommaterials physics to new applications. The application in thin-film transistorsfor large-area displays was the subject of a joint session with the symposium"Flat-Panel Display Materials and Large-Area Processes." Further, this symposiumfeatured special focused sessions on heterogeneous materials, color sensors andradiation imaging, and parameter extraction and device modelling.

S. Quha, of United Solar, illustrated the disappearing distinction betweenamorphous and nanocrystalline silicon by summarizing the present state inwhich growth experiments, structural analysis, and device fabrication aredirected to the understanding and utilization of heterogeneity in amorphous andmicrocrystalline films. P. Roca, of Ecole Polytechnique, Palaiseau (Paris),described the deposition of just such films with medium-range order fromclusters formed in the glow discharge. A. Howling, of EPF Lausanne, analyzedthese negatively charged silicon clusters, containing up to 60 Si atoms, by lightscattering, infrared absorption, and mass spectrometry. P.M. Voyles, of theUniversity of Illinois, Urbana-Champaign, described the application of variable-coherence electron microscopy, a new technique, to the identification of fine-grained local order.

Y.F. Zhang, of the City University of Hong Kong, presented a new form ofsilicon—silicon nanowires—made by laser ablation of silicon, followed bycondensation in a steep temperature gradient. Q.L. Kong, of the ChineseAcademy of Science in Beijing, presented a photodilation effect in a-Si:H, whichstimulated a vigorous discussion of the experimental techniques employed andthe possible structural changes associated with the Staebler-Wronski (S-W) effect.H.M. Branz, of NREL, presented a new model for the S-W effect, in which therecombination of two photogenerated diffusing hydrogen atoms on one Si-Sibond leaves behind two spatially separated silicon dangling bonds. X. Liu, ofCornell University, applied the recent discovery of extremely low internal frictionin a-Si:H at cryogenic temperatures to the observation of the triple point and theortho-para conversion of molecular hydrogen occluded in films grownby the hot wire technique. These observations nicely complement earlier onesmade by Raman spectroscopy at Bell Labs and by MMR at Xerox PARC.

The selective crystallization of a-Si:H allows one to combine the advantages ofthe low leakage current of a-Si:H thin-film transistors (TFTs) with the highcurrents and CMOS capability provided by polysilicon. P. Mei, of Xerox PARC,described selective laser crystallization and a complete top-gate process formaking a-Si:H and poly-Si TFTs. K. Pangal, of Princeton University, showed a

XIX






relatively fast and selective crystallization by furnace anneal following exposureto a hydrogen discharge.

United Solar, ECD, NREL and Kaneka described recent progress in solar cellefficiencies. Amorphous silicon is also applied in X-ray detector arrays, whichprovide high-resolution real-time electronic observation and are on the verge ofmarket introduction. M. Boehm, of the University of Siegen, Germany, showedthe variety of applications that can be satisfied with imagers based on a-Si:Hphotodetectors integrated with application-specific integrated circuits (ASICs).This is a field of considerable activity at present. Finally, M. Boucinha, of INESCat Lisbon, made a first step to micromachined silicon-on-glass by demonstratingan a-Si.Ii TFT using an air gap as the gate dielectric.

On behalf of all of the participants of the 1998 symposium, we thankAkzo Mobel, dpiX-A Xerox Company, Fuji Electric Corporate Research andDevelopment, Ltd., Kaneka Corp., Mitsui Chemical Co., Ltd., MAPS France,national Renewable Energy Laboratory, Sanyo Electric Co., Ltd., Tokuyama Corp.,and Voltaix, Inc. for their financial support. The Organizing Committee isgrateful to this year's Program Advisory Committee, consisting of Howard Branz(co-chair), Jun-ichi Hanna, Stephen M. Gates, Michio Kondo, Rodrigo Martins,Hannes Meier, Seiichi Miyazaki, Fabrizio Palma, Terry Peterson, Ruud Schropp(chair), Bob Street, and Sigurd Wagner (co-chair) for indicating appropriatecandidates as invited speakers and for rating the abstracts within the short timeavailable and thus contributing to a well-balanced and successful program.Finally, we wish to express our gratitude to Craig Taylor, and above all, toMary Ann Woolf for organizational assistance that has made the symposium andthese proceedings a great success.

Ruud SchroppHoward M. BranzMichael HackIsamu ShimizuSigurd Wagner

August 1998

xx






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 481— Phase Transformation and Systems Driven Far From Equilibrium, E. Ma,P. Bellon, M. Atzmon, R. Trivedi, 1998, ISBN: 1-55899-386-X

Volume 482— Nitride Semiconductors, F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura,S. Strite, 1998, ISBN: 1-55899-387-8

Volume 483— Power Semiconductor Materials and Devices, S.J. Pearton, R.J. Shul,E. Wolfgang, F. Ren, S. Tenconi, 1998, ISBN: 1-55899-388-6

Volume 484— Infrared Applications of Semiconductors II, S. Sivananthan, M.O. Manasreh,R.H. Miles, D.L. McDaniel, Jr., 1998, ISBN: 1-55899-389-4

Volume 485— Thin-Film Structures for Photovoltaics, E.D. Jones, R. Noufi, B.L. Sopori,J. Kalejs, 1998, ISBN: 1-55899-390-8

Volume 486— Materials and Devices for Silicon-Based Optoelectronics, J.E. Cunningham,S. Coffa, A. Polman, R. Soref, 1998, ISBN: 1-55899-391-6

Volume 487— Semiconductors for Room-Temperature Radiation Detector Applications II,R.B. James, T.E. Schlesinger, P. Siffert, M. Cuzin, M. Squillante, W. Dusi,1998, ISBN: 1-55899-392-4

Volume 488— Electrical, Optical, and Magnetic Properties of Organic Solid-State MaterialsIV, J.R. Reynolds, A.K-Y. Jen, L.R. Dalton, M.F. Rubner, L.Y. Chiang, 1998,ISBN: 1-55899-393-2

Volume 489— Materials Science of the Cell, B. Mulder, V. Vogel, C. Schmidt, 1998,ISBN: 1-55899-394-0

Volume 490— Semiconductor Process and Device Performance Modeling, J.S. Nelson,CD. Wilson, S.T. Dunham, 1998, ISBN: 1-55899-395-9

Volume 491— Tight-Binding Approach to Computational Materials Science, P.E.A. Turchi,A. Gonis, L. Colombo, 1998, ISBN: 1-55899-396-7

Volume 492— Microscopic Simulation of Interfacial Phenomena in Solids and Liquids,S.R. Phillpot, P.D. Bristowe, D.Q. Stroud, J.R. Smith, 1998, ISBN: 1-55899-397-5

Volume 493— Ferroelectric Thin Films VI, R.E. Treece, R.E. Jones, S.B. Desu, CM. Foster,I.K. Yoo, 1998, ISBN: 1-55899-398-3

Volume 494— Science and Technology of Magnetic Oxides, M. Hundley, J. Nickel, R. Ramesh,Y. Tokura, 1998, ISBN: 1-55899-399-1

Volume 495— Chemical Aspects of Electronic Ceramics Processing, P.N. Kumta, A.F. Hepp,D.B. Beach, J.J. Sullivan, B. Arkles, 1998, ISBN: 1-55899-400-9

Volume 496— Materials for Electrochemical Energy Storage and Conversion II—Batteries,Capacitors and Fuel Cells, D.S. Qinley, D.H. Doughty, T. Takamura, Z. Zhang,B. Scrosati, 1998, ISBN: 1-55899-401-7

Volume 497— Recent Advances in Catalytic Materials, N.M. Rodriguez, S.L. Soled, J. Hrbek,1998, ISBN: 1-55899-402-5

Volume 498— Covalently Bonded Disordered Thin-Film Materials, M.P. Siegal, J.E. Jaskie,W. Milne, D. McKenzie, 1998, ISBN: 1-55899-403-3

Volume 499— High-Pressure Materials Research, R.M. Wentzocovitch, R.J. Hemley,W.J. Nellis, P.Y. Yu, 1998, ISBN: 1-55899-404-1

Volume 500— Electrically Based Microstructural Characterization II, R.A. Qerhardt, M.A. Alim,S.R. Taylor, 1998, ISBN: 1-55899-405-X

Volume 501—Surface-Controlled Nanoscate Materials for High-Added-Value Applications,K.E. Qonsalves, M-I. Baraton, J.X. Chen, J.A. Akkara, 1998, ISBN: 1-55899-406-8

Volume 502— In Situ Process Diagnostics and Intelligent Materials Processing,P.A. Rosenthal, W.M. Duncan, J.A. Woollam, 1998, ISBN: 1-55899-407-6

Volume 503— Nondestructive Characterization of Materials in Aging Systems, R.L. Crane,S.P. Shah, R. Gilmore, J.D. Achenbach, P.T. Khuri-Yakub, T.E. Matikas, 1998,ISBN: 1-55899-408-4

Volume 504— Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials,J.C Barbour, S. Roorda, D. Ila, 1998, ISBN: 1-55899-409-2

Volume 505— Thin-Films—Stresses and Mechanical Properties VII, R.C. Cammarata,E.P. Busso, M. Nastasi, W.C. Oliver, 1998, ISBN: 1-55899-410-6

Volume 506— Scientific Basis for Nuclear Waste Management XX, I.Q. McKinley,C McCombie, 1998, ISBN: 1-55899-411-4

Volume 507—Amorphous and Microcrystalline Silicon Technology—1998, S. Wagner, M. Hack,H.M. Branz, R. Schropp, I. Shimizu, 1998, ISBN: 1-55899-413-0






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 508— Flat-Panel Display Materials—1998, Q. Parsons, T.S. Fahlen, S. Morozumi,C. Seager, C-C. Tsai, 1998, ISBN: 1-55899-414-9

Volume 509— Materials Issues in Vacuum Microelectronics, W. Zhu, L.S. Pan, T.E. Felter,C. Holland, 1998, ISBN: 1-55899-415-7

Volume 510— Defect and Impurity Engineered Semiconductors and Devices II, S. Ashok,J. Chevallier, K. Sumino, B.L. Sopori, W. Qoetz, 1998, ISBN: 1-55899-416-5

Volume 511— Low-Dielectric Constant Materials IV, C. Chiang, J.T. Wetzel, T-M. Lu,P.S. Ho, 1998, ISBN: 1-55899-417-3

Volume 512—Wide-Bandgap Semiconductors for High Power, High Frequency and HighTemperature, S. DenBaars, M.S. Shur, J. Palmour, M. Spencer, 1998,ISBN: 1-55899-418-1

Volume 513—Hydrogen in Semiconductors and Metals, N.H. Nickel, W.B. Jackson,R.C. Bowman, 1998, ISBN: 1-55899-419-X

Volume 514—Advanced Interconnects and Contact Materials and Processes for FutureIntegrated Circuits, S.P. Murarka, D.B. Fraser, M. Eizenberg, R. Tung, R. Madar,1998, ISBN: 1-55899-420-3

Volume 515—Electronic Packaging Materials Science X, D.J. Belton, R. Pearson, M. Qaynes,E.Q.Jacobs, 1998, ISBN: 1-55899-421-1

Volume 516—Materials Reliability in Microelectronics VIII, T. Marieb, J. Bravman,M.A. Korhonen, J.R. Lloyd, 1998, ISBN: 1-55899-422-X

Volume 517—High-Density Magnetic Recording and Integrated Magneto-Optics: Materials andDevices, K. Rubin, J.A. Bain, T. Nolan, D. Bogy, B.J.H. Stadler, M. Levy,J.P. Lorenzo, M. Mansuripur, Y. Okamura, R. Wolfe, 1998, ISBN: 1-55899-423-8

Volume 518—Microelectromechanical Structures for Materials Research, S.B. Brown,C. Muhlstein, P. Krulevitch, Q.C. Johnston, R.T. Howe, J.R. Gilbert, 1998,ISBN: 1-55899-424-6

Volume 519—Organic/Inorganic Hybrid Materials, R.M. Laine, C. Sanchez, E. Qiannelis,C.J. Brinker, 1998, ISBN: 1-55899-425-4

Volume 520—Nanostructured Powders and Their Industrial Application, Q. Beaucage,J.E. Mark, Q. Burns, H. Duen-Wu, 1998, ISBN: 1-55899-426-2

Volume 521—Porous and Cellular Materials for Structural Applications, D.S. Schwartz,D.S. Shin, H.N.Q. Wadley, A.Q. Evans, 1998, ISBN: 1-55899-427-0

Volume 522—Fundamentals of Nanoindentation and Nanotribology, N.R. Moody,W.W. Qerberich, S.P. Baker, N. Burnham, 1998, ISBN: 1-55899-428-9

Volume 523—Electron Microscopy of Semiconducting Materials and ULSI Devices,C. Hayzelden, F.M. Ross, C.J.D. Hetherington, 1998, ISBN: 1-55899-429-7

Volume 524—Application of Synchrotron Radiation Techniques to Materials Science IV,S.M. Mini, D.L. Perry, S.R. Stock, L.J. Terminello, ISBN: 1-55899-430-0

Volume 525—Rapid Thermal and Integrated Processing VII, M.C. Ozturk, F. Roozeboom,P.J. Timans, S.H. Pas, 1998, ISBN: 1-55899-431-9

Volume 526—Advances in Laser Ablation of Materials, R.K. Singh, D.H. Lowndes, D.B. Chrisey,J. Narayan, T. Kawai, E. Fogarassy, 1998, ISBN: 1-55899-432-7

Volume 527—Diffusion Mechanisms in Crystalline Materials, Y. Mishin, N.E.B. Cowern,C.R.A. Catlow, D. Farkas, Q. Vogl, 1998, ISBN: 1-55899-433-5

Volume 528—Mechanisms and Principles of Epitaxial Growth in Metallic Systems, L.T. Wille,C.P. Burmester, K. Terakura, G. Comsa, E.D. Williams, 1998, ISBN: 1-55899-434-3

Volume 529—Computational and Mathematical Models of Microstructural Evolution,J.W. Bullard, R. Kalia, M. Stoneham, L-Q. Chen, 1998, ISBN: 1-55899-435-1

Volume 530— Biomaterials Regulating Cell Function and Tissue Development, D. Mooney,A.G. Mikos, K.E. Healy, Y. Ikada, R.C. Thomson, 1998, ISBN: 1-55899-436-X

Volume 531—Reliability of Photonics Materials and Structures, E. Suhir, M. Fukuda,C.R. Kurkjian 1998, ISBN: 1-55899-437-8

Volume 532—Silicon Front-End Technology—Materials Processing and Modelling, N.E.B.Cowern, D. Jacobson, P. Griffin, P. Packan, R. Webb, 1998, ISBN: 1-55899-438-6

Volume 533—Epitaxy and Applications of Si-Based Heterostructures, E.A. Fitzgerald,P.M. Mooney, D.C. Houghton, 1998, ISBN: 1-55899-439-4

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






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