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AJEET ROHATGI School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta, GA 30332-0250 Telephone: 404/894-7692 Facsimile: 404/853-9171 DATE OF BIRTH December 3, 1950 U. S. Citizen CURRENT TITLE Regents Professor Georgia Power Distinguished Professor of Electrical Engineering Director, University Center of Excellence for Photovoltaics Research and Education EDUCATION Ph.D. Metallurgy and Materials Science, Lehigh University 1977 M.S. Materials Engineering, Virginia Polytechnic Institute and State University 1973 B.S. Electrical Engineering, Indian Institute of Technology, Kanpur, India 1971 EMPLOYMENT HISTORY Georgia Institute of Technology Regents’ Professor 1995- present Director, University Center of Excellence for 1

AJEET ROHATGI - Sunivasuniva.com/documents/CompleteCVRohatgi.doc · Web viewThesis Title: "Molecular Beam Epitaxial Growth of CdTe and HgCdTe for New Infrared and Optoelectronic Devices"

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AJEET ROHATGI

AJEET ROHATGI

School of Electrical and Computer Engineering

Georgia Institute of Technology

Atlanta, GA 30332‑0250

Telephone: 404/894‑7692

Facsimile: 404/853‑9171

DATE OF BIRTH

December 3, 1950

U. S. Citizen

CURRENT TITLE

Regents Professor

Georgia Power Distinguished Professor of Electrical Engineering

Director, University Center of Excellence for Photovoltaics

Research and Education

EDUCATION

Ph.D.Metallurgy and Materials Science, Lehigh University

1977

M.S.Materials Engineering, Virginia Polytechnic Institute

and State University

1973

B.S.Electrical Engineering, Indian Institute of Technology,

Kanpur, India

1971

EMPLOYMENT HISTORY

Georgia Institute of Technology

Regents’ Professor

1995-present

Director, University Center of Excellence for

Photovoltaic Research and Education

1992‑present

Georgia Power Distinguished Professor

1988‑present

Professor of Electrical Engineering

1987‑1988

Associate Professor of Electrical Engineering

1985‑1987

Westinghouse Research & Development Center, Pittsburgh, PA

Westinghouse Fellow

1984-1985

Senior Engineer A

1980‑1984

Senior Engineer B

1977‑1980

EXPERIENCE SUMMARY

At Westinghouse: Science and technology of photovoltaic and devices; identification of defects in semiconductors and their effects on electronic materials and devices; design and fabrication of record high efficiency solar cells; low temperature and dry processing of VLSI circuits; development of radiation hard field oxide and thin gate dielectrics for next generation integrated circuits.

CURRENT FIELDS OF INTEREST

Modeling and fabrication of record high efficiency silicon solar cells; fundamental understanding of defects and their passivation in multicrystalline materials; development of low‑cost high‑performance devices; rapid thermal processing of silicon solar cells defects and carrier lifetime limiting mechanisms in semiconductors; optical and electronic properties of compound semiconductors; MBE and MOCVD growth of III‑V and II‑VI semiconductors; low- temperature high-quality dielectrics; materials characterization and novel instrumentation techniques.

PROFESSIONAL AFFILIATIONS

Fellow, Institute of Electrical and Electronics Engineers (IEEE)

Member, American Physical Society

Member, Solar Energy Society

Member, American Ceramic Society

Member, Electrochemical Society

Member, Materials Research Society

Member, Technical Advisory Committee for DOE Solar Energy Programs

Member, Solar Energy Research Institute Proposal Evaluation Panel

Member, Editorial Board, Solar Cell Journal

Member, Editorial Board, Solar Energy Materials and Solar Cells

Member, Board, GT Solar Inc.

Member, Editorial Board, Progress in Photovoltaics

HONORS AND AWARDS

1. Regents Professor 1995-present

2.Graduate Student Government Faculty of the Year Award, 1995

3.Sigma Xi Outstanding Sustained Research Award, 1994

4.DOE "University Center of Excellence Award" for sustained contributions to the science and technology of photovoltaic, 1992

5.Georgia Power Distinguished Professor, 1987

6.IEEE Fellow for theoretical and experimental contributions to design and fabrication of high efficiency solar cells, 1991

7.Westinghouse Fellow, 1985

8.Westinghouse Engineering Achievement Award in recognition of achievement in design, development and fabrication of high efficiency silicon solar cells, 1984

9.DOE Research Excellence Award for Outstanding Crystalline Silicon PV Devices and Processing, 1995

10.DOE Research Excellence Award for Outstanding Analysis, Characterization, and Device Fabrication of Thin-Film Cadmium Telluride, 1995

11.NASA Recognition Certificate, for development of coatings to boost solar‑cell output, 1987

12.NASA Recognition Certificate for technical innovation of high efficiency solar cell designs using doped polysilicon layers, 1986

13.NASA Recognition Certificate for creative development of contact system for semiconductor devices, 1981

14.Invited Technical Expert to Hong Kong University of Science and Technology, 1991

15.Technical Expert, United Nations Development Program (UNDP), 1981

16.Sigma Xi Best Doctoral Dissertation Advisor Award, 1992

17.Best Poster Paper Award, 23rd IEEE Photovoltaic Specialists Conference, 1993

18.Science Applications International Corporation (SAIC) Outstanding Paper Award, 1991

19.SAIC Outstanding Research Paper Award, as Faculty Advisor, 1992

20.Horner Fellowship, 1975‑1977

21.National Science Foundation Research Scholarship, 1973‑1975

22.Best Bachelor of Technology Undergraduate Research Project Award, 1971

23.National Merit Scholarship, 1964‑1971

24.Honorary Adviser of Beijing Solar Energy Research Institute, 1995

25.Best Poster Paper Award, 25th IEEE Photovoltaic Specialists Conference, 1996

26.Georgia Institute of Technology Distinguished Professor Award, 1996

27.Georgia Tech Commencement Speaker, September 1996.

28.Sigmi Xi Best Doctoral Dissertation Advisor Award, 1998.

29.Science Applications International Corporation, Best Paper Award, April 1998.

30 Electrochemical Society, Thomas D. Callinan Award, 1999.

31. 11th International Phovoltaic Science and Engineering Conference, Special Paper Award, 1999.

32. Best Poster Paper Award, 28th IEEE Photovoltaic Specialists Conference, 2000.

33. General Chair, IEEE Photovoltaic Specialists Conference, 2000.

34. IEEE Power Engineering Society Energy Development and Power Generation Committee, Technical Committee Prize Paper Award, 2000.

35. Best Poster Paper Award, 29th IEEE Photovoltaic Specialists Conference, 2002.

36. President’s Council Outstanding Faculty/Staff Advisor Award, 2003.

37. IEEE William Cherry Award, Third World Conference WCPEC, May, 2003.

38. Best Paper Award, 3rd WCPEC World Conference on PV Energy Conversion, May, 2003

39. National Renewable Energy Lab, Paul Rappoport Award, December 2003.

40. SAIC Outstanding Research Paper Award, April 2004.

41. Sigma Xi Best Thesis Award, April 2004.

42. Best Papr Awards, 14th International PVSEC, January 2004.

43. Best Poster Paper Award, 31st Photovoltaic Specialists Conference, January 2005.

44. GA Tech Outstanding Research Program Development Award 2007

TEACHING

Courses Taught

Instructor

Number of

Value Rating*

Quarter

Course

Students

(5.0 basis)

Fall 1985

EE 4350, Materials Science

42

3.8

Winter 1986

EE 4350, Materials Science 45

4.4

Spring 1986

EE 4350, Materials Science

48

3.9

Fall 1986

EE 8345, Solar Cells

21

4.8

Spring 1987

EE 4056, IC Fabrication

15

4.9

Fall 1987

EE 8344, Solar Cells

19

4.7

Spring 1988

EE 4056, IC Fabrication

23

4.4

Fall 1988

EE 8344, Solar Cells

17

4.6

Spring 1989

EE 4056, IC Fabrication

25

4.7

Fall 1990

EE 6456, Solar Cells

25

4.3

Spring 1990

EE 4056, IC Fabrication

12

4.6

Spring 1991

EE 4056, IC Fabrication

14

4.9

Fall 1992

EE 6456, Solar Cells

21

4.7

Spring 1993

EE 4056, IC Fabrication 15

4.6

Fall 1993

EE 6456, Solar Cells

22

4.6

Fall 1994

EE 6456, Solar Cells

14

4.7

Fall 1995

EE 6456, Solar Cells

14 4.6

Fall 1996

EE 6456, Solar Cells

18

4.8

Fall 1997

EE 6456, Solar Cells

23

4.8

Fall 1998

EE 6456, Solar Cells

20

4.6

Fall 1999

EE 6456, Solar Cells

11

4.8

Fall 2000

EE 6456, Solar Cells

09

4.3

Spring 2001

EE 4752 IC Fabrication

29

4.6

Spring 2002

EE 6453, Theory of Electronic Devices 33

4.5

Fall 2003

EE 6456, Solar Cells

23

4.3

Fall 2004

EE 6456, Solar Cells

17

4.6

*Instructor's overall ability and effectiveness as a teacher obtained from Institute student course evaluations.

Curriculum/Laboratory Development

1.Developed a new graduate level course on solar cells, EE 6456, 1986.

2.Assisted in the development of undergraduate level course on IC fabrication (EE 4056) and tour of the silicon fabrication laboratory.

3.Started a new laboratory special problems course on design and fabrication of high efficiency silicon solar cells, 1994.

4.Established a research laboratory for electrical characterization of semiconductors, 1988.

5.Established a research laboratory for optical characterization of semiconductors, 1989.

6.Established a complete state‑of‑the‑art silicon solar cell fabrication facility, 1990.

7.Established University Center of Excellence for Photovoltaics Research and Education, 1992.

8.Established DOE‑sponsored Educational Support Program (ESP) laboratory to assist U.S. University Research Programs on Photovoltaics, 1993.

Individual Student Guidance

Research Engineers/Post Doctoral Fellows Supervised

a.R. Sudharsanan, 1988‑91

Currently at Spire Corporation, Boston, MA. MOCVD growth and optoelectronic properties of CdTe films.

b.R. R. King, 1990‑91

Currently at Siemens Solar Corporation, Camarillo, CA. Aluminum diffusion and fabrication of high efficiency silicon solar cells.

c.J. Salami, 1990‑1994

Currently at Ebara Solar, Large, PA. Fabrication of high efficiency poly and single crystal silicon cells.

d.A. Bhat, 1991‑1995

Currently at Siemens Advanced Technology Center, Alpharetta, GA. CdTe thin film solar cells by MOCVD.

e.Z. Chen, 1992‑1995

Currently at Hewlet-Packard Company, Corvallis, OR. PECVD coatings, and rapid thermal processing of silicon cells.

f.G. Crotty, 1992‑1996

Currently at SunPower Corporation, Sunnyvale, CA. Silicon solar cells fabrication and operation of the Education Support Program laboratory.

g.S. Kamra, 1992‑2000

Currently at

Solution growth of CdS thin films for CdTe/CdS heterojunction solar cells.

h.K. Tate, 1992‑1997

Currently at Georgia Institute of Technology (UCEP). Semiconductor characterization and instrumentation.

j.J. Mejia, 1995-1997

Currently at ITT Nightvision, Roanoke, VA. Silicon solar cells fabrication

k.P. Doshi, 1997-1999

Currently at Hewlett Packard. High Efficiency RTP Solar Cells.

l.A. Ebong, 1997-present

Currently an Associate Director of UCEP at the Georgia Institute of Technology, (UCEP). High Efficiency Large Area Low Cost Solar cells.

Ph.D. Students Supervised

a.R. L. Frost

(graduated Fall 1990). Currently at Savannah River Nuclear Plant, Savannah, GA.

Thesis Title:

"Slow Positron Annihilation Spectroscopy Applied to the Analysis of Thin Semiconductor, Silicide and Titanium Nitride Structures"

b. S. A. Ringel

(graduated Spring 1991). Currently a faculty member, Ohio State University.

Thesis Title:

"Growth and Process Induced Defects and Recombination Mechanisms in AlGaAs/GaAs and Cd1‑xZnx Te/CdS Photovoltaic Device Structures"

c. B. Wagner

(academic advisor, graduated Fall 1991). Currently a Research Engineer, Georgia Tech Research Institute.

Thesis Title:

"Molecular Beam Epitaxial Growth of CdTe and HgCdTe for New Infrared and Optoelectronic Devices"

d. A. W. Smith

(graduated Spring 1992). Currently a Member of the Senior Technical Staff, ITT Night Vision

Thesis Title:

"Light Confinement and Hydrodynamic Modelling of Semiconductor Structures by Volumetric Methods"

e. R. Ramanachalam

(graduated Spring 1993). Currently a Process Engineer, Texas Instruments, Dallas, TX.

Thesis Title:

"Correlation of Defects and Electronic Properties of Si and ZnO"

f. G. Augustine

(graduated Fall 1993). Currently a Senior Engineer at Westinghouse Science and Technical Center, Pittsburgh, PA.

Thesis Title:

"Modelling, Characterization and Fabrication of InP Thin Films and Devices for Optoelectronic Applications"

g. S. K. Pang

(graduated Fall 1993). Currently a member of the Technical Staff at the Institute of Microelectronics, National University of Singapore.

Thesis Title:

"Defects and Carrier Lifetime in Silicon"

h. P. Sana

(graduated Spring 1995) Intel Corporation, Portland, OR. Currently a Process Development Engineer at Texas Instruments, Dallas, TX.

Thesis Title:

"Fabrication and Analysis of High Efficiency Polycrystalline Silicon Solar Cells"

i. W. A. Doolittle

(graduated Fall 1995) Currently an Associate Professor with the School of Electrical and Computer Engineering, Georgia Tech

Thesis Title:

"Deep Level Transient Spectroscopy and Defects in Polycrystalline Silicon"

j. H. C. Chou

(graduated Summer 1995) Currently a Manufacturing Development Engineer with Hewlett-Packard, Santa Rosa, CA.

Thesis Title:

"Defects and Carrier Transport Mechanisms in Polycrystalline CdTe/Cds Heterojunction Solar Cells"

k. L. Cai

(graduated Spring 1996) Currently a Research Engineer with SpectroLab, Los Angeles, CA.

Thesis Title:

"High Efficiency Inversion Layer Silicon Solar Cells"

l. P. Doshi

(graduated Winter 1997) Currently at Hewlett Packard, Atlanta, GA

Thesis Title:

"Rapid Thermal Processing of High Efficiency Silicon Solar Cells"

m. T. Krygowski

(graduated Spring 1998) Currently a Research Engineer with Sandia National Laboratories, Albuquerue, New Mexico

Thesis Title:

"Gettering and Passivation of High Efficiency Silicon Solar Cells"

n. S. Narasimha

(graduated Winter 1999) Currently Research Engineer with IBM-Corporation-East Fishkill, Hopewell Junction, NY

Thesis Title:

"Understanding and application of screen-printed metallization, aluminum back surface fields, and dielectric surface passivation for high-efficiency silicon solar cells"

o. M. Ropp

(graduated Fall 1998) Currently an Associate Professor, South Dakota State University, Brookings, South Dakota

Thesis Title:

"Design issues for grid-connected photovoltaic systems"

p.A. Ristow

(expected date of graduation Fall 2004)

Thesis Title:

“High Efficiency Multicrystalline Silicon Solar Cells”

q.V. Yelundur

(graduated Fall 2003) Currently a Research Engineer II, UCEP, Georgia Institute of Technology

Thesis Title:

“Understanding and implementation of hydrogen passivation of defects in String Ribbon silicon for high-efficiency, manufacturable, silicon solar cells”

r.M. Finnegan

Currently a graduate student at the University of Michigan

Thesis Title:

“Development of Low Cost on Dendritic Web Silicon”

s.B. Damiani

(graduated Fall 2003) Currently a Research Scientist at Intel, Portland Oregon

Thesis Title:

“Investigation of light induced degradation in promising photovoltaic grade silicon and development of porous silicon anti-reflection coatings for silicon solar cells”

t.J. Jeong

(graduated Fall 2002) Currently a Research Scientist at LG Chemical Ltd. In Daejun, Korea

Thesis Title:

“Hydrogen passivation of defects and rapid thermal processing for high-efficiency silicon ribbon solar cells”

u.A. Pregelj

(graduated Spring 2004) Currently a Transmission Planning Engineer at Georgia Transmission Corporation

Thesis Title:

“Impact of distributed generation of power network operation”

v.J. Brody

(graduated Fall 2003) Currently a Lecturer at Emory University, Atlanta, Georgia

Thesis Title:

“Doping Dependence of Surface and Bulk Passivation of Multicrystalline Silicon Solar Cells”

w.K. Nakayashiki

(graduated Fall 2007) Currently a Reseach Engineer at Palo Alto Research Center, Palo Alto, CA

Thesis Title:

“Understanding of defect passivation and its effect on multicrystalline silicon solar cell performance”

x.V. Meemongkoliat

(expected date of graduation Fall 2008)

Thesis Title:

Development of High Efficiency Czochralski Silicon Cells Through Understanding and Improvement of Light Induced Degradation

y.M. Sheoran

(expected date of graduation, Fall 2009)

Thesis Title:

Development of Thin High Efficiency Cast Multicrystalline Si Cells

z.Gregory Henry

(expected date of graduation, Fall 2009)

Thesis Title:

a.M. Hilali

(graduated, Summer 2005) Currently a Research Engineer at Advent Solar, Albuquerque, New Mexico

Thesis Title:

“Understanding and Development of Manufacturable Screen Printed Contacts on High Sheet Resistance Emitters for Low-Cost Si Solar Cells

b.Sumit Pahwa

(Currently a graduate student in India)

Thesis Title:

“Development of Interdigitalied Back Contact Si Solar Cells”

c.Arnab Das

(expected date of graduation, Fall 2011)

Theis Title:

d.Rishi Ramanathan

(expected date of graduation, Fall 2010)

Thesis Title:

M. S. Students Supervised

a. J. Ward

(graduated Spring 1988) Currently a Research Engineer for AT&T, Jacksonsville, FL

Research Topic:

“Fourier Transform Infrared Spectroscopy of Semiconductors”

b. J. Salami

(graduated Spring 1990) Currently a Process Engineer with Ebara Solar, Large, PA

Research Topic:

“Silicon Solar Cells and Power Devices”

c. K. C. Lee

(graduated Fall 1990)

Research Topic:

“Fabrication of High Efficiency Silicon Cells”

d. M. McDougal

(graduated Spring 1991)

Research Topic:

“CdTe Solar Cells”

e. T. Pham

(graduated Spring 1994)

Research Topic:

“Optimum Junction and Contact Formation for High Efficiency Silicon Solar Cells”

Undergraduate Students Supervised

a. Michael Haight

FTIR Measurements

b. Jim Welch

I‑V Measurements and Solar Cell Testing

c. Tuan Pham

Solar Cell Processing

d. Mahmudul Bari

Photovoltaic Lighting System

e. Maksura Haque

PV for residential application

f. Catherine Sana

Mechanical texturing of silicon wafers

g. Jose Mejia

Fabrication of high efficiency solar cells

Visiting Scholars

a. Kiyoshi Yasutake

Professor, Precision Engineering,

Osaka University, Japan

Research Topic:

“Modelling and Growth of PECVD Oxides”

b. Cor Leguijt

Netherlands Energy Research Foundation ECN

Research Topic:

“Surface Passivation by PECVD Oxides and Nitrides”

c. Jens Moschner

Ph.D Student, Institut fur Solarenergieforschung GmbH, Germany

Research Topic:

“Surface Passivation of Silicon Solar Cells”

4. Ralf Ludeman, Ph.D.

Fraunhofer Institute for Solar Energy Systems, Germany

Research Topic:

“Porous Silicon Texturing of Si

Solar Cells

Graduate and Undergraduate Special Problem Students

Supervised more than 20 students in the areas of modelling, design, fabrication, circuits and instrumentation.

RESEARCH PROPOSALS AND GRANTS FUNDED (as PI unless otherwise noted)

Georgia Tech

1.Basic Understanding of Lifetime Limiting Mechanisms in Silicon

Sponsor: Electric Power Research Institute

$108,000, January ‑ December, 1986

2.A Team Approach to Very High Efficiency Silicon Solar Cells

Sponsor: Electric Power Research Institute

$53,852, October 1986 to Sept. 1987.

3.High Efficiency Cadmium and Zinc Telluride Based Thin Film Solar Cells

Sponsor: SERI/DOE

$450,000, July 1986 to Nov. 1988.

4.New Concepts for Heterojunction Solar Cells

Joint Proposal with C. J. Summers (Co‑Principal Investigator)

Sponsor: SERI/DOE

$100,000, June 1987 to May 1988.

5.GaAs Solar Cell Research

Sponsor: Sandia National Labs

$32,000, Oct. 1986 to Sept. 1987.

6.Basic Research on Advanced Silicon Materials for High Performance Photovoltaic and Power Devices

Sponsor: Electric Power Research Institute (EPRI)

$600,442, October 1986 to September 1989.

7.Investigation of High Efficiency Solar Cells

Sponsor: Sandia National Labs

$90,000, Jan. to Dec. 1988.

8.Silicon Materials Research

Sponsor: SERI/DOE

$25,000, October 1988 to September 1989.

9.Research on High Efficiency Silicon Solar Cells

Sponsor: DOE/Sandia National Labs

$99,000, May 1989 to April 1990.

10.Silicon Materials Research

Sponsor: SERI/DOE

$25,000, October 1980 to September 1990.

11.Development of High Efficiency CdTe and CdZnTe Solar Cells

Sponsor: DOE/SERI

$450,000, September 1989 to August 1992.

12.Basic Research on Advanced Silicon Materials for High Performance Photovoltaic Devices

Sponsor: Electric Power Research Institute (EPRI)

$170,500, January 1990 to December 1990.

13.Development of High Efficiency CdTe and CdZnTe Solar Cells

Sponsor: SERI/DOE

$150,004, January 1990 to January 1991.

14.Investigation and Fabrication of High Efficiency Silicon Solar Cells

Sponsor: DOE/Sandia National Labs

$99,000, August 1989 to June 1990.

15.Investigation of High Efficiency Silicon Solar Cells

Sponsor: DOE/Sandia National Labs

$183,367, June 1990 to May 1991.

16.Impurity Characterization Support for Crystalline Silicon Program

Sponsor: SERI/DOE

$128,000, October 1989 to February 1992.

17.High Efficiency CdTe Solar Cells

Sponsor: SERI/DOE

$410,250, January 1992 to January 1995.

18.Low Cost Technologies for Micromechanical Systems

Sponsor: NSF. Joint proposal with M. Allen and N.M. Jokerst (Co‑Principal Investigators).

$503,695, September 1991 to August 1994.

19.Development of Low‑Cost High Efficiency Silicon Solar Cells

Sponsor: Sandia National Labs/DOE

$170,000, December 1991 to June 1993.

20.Fundamental Research on Post‑Growth Quality Enhancement Techniques in Crystalline Silicon Materials

Sponsor: NREL/DOE

$398,588, April 1992 to June 1995.

21.University Center of Excellence in Photovoltaics for Research & Education

Sponsor: Sandia National Labs/DOE and Georgia Institute of Technology

$2,168,594, June 1992 to July 1995.

22.The Design, Construction and Monitoring of a Photovoltaic Power System on the Georgia Tech Aquatic Center, Site of the 1996 Olympic Natation Venue (as co-principal investigator)

Sponsor: Department of Energy, Georgia Power Company and Georgia Institute of Technology

$5,439,000, March 1994 to December 1996.

23.University Center of Excellence in Photovoltaics for Research & Education

Sponsor: Sandia National Labs/DOE and Georgia Institute of Technology

$3,655, 098, July 1995 to June 2000.

24.Fundamental Research on Post-Growth Quality Enhancement Techniques in Crystalline Silicon Materials

Sponsor: NREL/DOE

$73,900, May 1995 to October 1995

25.High Efficiency CdTe Solar Cells

Sponsor: NREL/DOE

$25,000, January 1995 to October 1995

26.Development of Rapid Thermal Processing to Produce Low Cost Solar Cells

Sponsor: Solarex Corporation

$295, 934, July 1995 to June 1998

27.Defect Characteristics and Process Development for HCL Efficiency Thin Silicon Film Solar Cell

Sponsor: AstroPower

$137, 500, July 1995 to June 1998

28.Characterization of Defects and Minority Carrier Lifetime in Silicon Carbide Materials

Sponsor: Space Power Institute

$135,000, July 1995 to June 1998

29.Fundamental Research on Post-Growth Quality Enhancement Techniques in Crystalline Silicon Materials

Sponsor: NREL/DOE

$595,488, April 1992 to July 1997.

30.University R&D in Crystalline Silicon

Sponsor: NREL/DOE

$443,000, January 1998 to December 2000.

31.Module Integrated Charge Controller

Sponsor: Advanced Energy Systems

$40,000, July 1997 to June 1998.

32.Ultra Thin Silicon Ribbon for High Efficiency Solar Cells

Sponsor: Evergreen Solar

$175,082, October 1997 to September 2000.

33.The Aquatic Center Roof PV Systems

Sponsor: Georgia Institute of Technology

$25,000, October 1997 to September 1998

34.Process Development for Dendritic Web Silicon Solar Cells

Sponsor: Ebara Solar Incorporated

$250,000, February 1998 to December 1999

35.Post Deposition Processes and Devices

Sponsor: MV Systems Inc.

$25,000 April 1998 to October 1998

36.Rapid Thermal Processing of EFG Silicon for Solar Cell Manufacturing

Sponsor: ASE Americas, Inc.

$204,913, August 1998 to August 2001

45. Novel Processes for Ribbon Silicon Solar Cells

Sponsor: Evergreen Solar Inc.

$210,000, (2001-2004)

46. Development of High Efficiency Solar Cells on HEM Multicrystalline Silicon

Sponsor: GT Solar Technologies Inc.

$42,400 (2001-2004)

47. University Photovoltaic Research Education and Collaboration with the US Department of Energy

Sponsor: United States Department of Energy

$4,250,874, July 2000 - June 2005

40. Sandia Lab and Equipment Grant

Sponsor: Sandia National Labs

$309,000 March 2001

41. University Research in Crystalline Silicon Photovoltaics

Sponsor: National Renewable Energy Lab

$450,000 January 2002 – March 2005

42. Development of Manufacturable High Efficiency Czochralski Silicon Solar Cells

Sponsor: Shell Solar Industries LP

$155,853 May 2003-2005

43. Investigation of New Screen Printed Pastes for Low-Cost High Efficiency Silicon Solar Cells

Sponsor: Ferro Corporation

$135,000, September 2003-August 2005

44. Development of High Efficiency String Ribbon Cells

Sponsor: Evergreen Solar Inc.

$80,000 May 2003-2005

45. Understanding, Modeling and Efficiency Enhancement of Spheral Solar Cells

Sponsor: Spheral Solar Power

$100,000, January 2005-2006

46.Development of Amorphous Crystalline Hybrid (ACH) Silicon Solar Cells

Sponsor: General Electric

$140,000, January 2005-January 2007

47. Application of A Boron Source Diffusion Barrier for the Fabrication of Back Contact Silicon Solar Cells

Sponsor: Advent Solar

$87, 558.00, November 2003-October 2004

48.Development of Contacts for Back-Contact Emitter-Wrapped Through Silicon

Sponsor: Advent Solar

$100,000.00, January 2005-December 2005

49.Thin-Film Si Bottom Cells for Tandem Device Structures

Sponsor: NREL/UOD

$535,079.00, December 2003-December 2007

50.Fabrication and Characterization of High-Efficiency Solar Cells on Multicrystalline Silicon Substrates

Sponsor: BP Solar

$40,000.00, August 2005-December 2005

51.Development of Manufacturable High Efficiency Czochralski Silicon Solar Cells

Sponsor: Shell Solar Industries LP

$74,331.00 May 2005-2006

52.Investigation of New Screen Printed Pastes for Low-Cost High Efficiency Silicon Solar Cells

Sponsor: Ferro Corporation

$70,000, September 2005-September 2007

53.Fabrication of High-Efficiency Solar Cells on Thin (100-150 (m) Silicon Substrates

Sponsor: BP Solar

$120,000.00, December 2004-December 2006

54.University Research in Crystalline Silicon Photovoltaics

Sponsor: National Renewable Energy Lab

$101, 250, October 2005 – April 2005

55.Investigation of New Screen-Printed Pastes from Hereaeus Inc. for High Efficiency

Sponsor: Heraeus Incorporated, Inc.

$80,000.00, December 2005-December 2006

56.Investigation of New Screen-Printed Pastes for High Efficiency

Sponsor: Engelhard Corporation

$300,000.00, December 2005 –December 2007

Other Research Grants

In addition to being Principal Investigator on the above externally funded projects at Georgia Tech, participated in several sponsored research programs as co‑investigator at the Westinghouse Research and Development Center during 1977 and 1985, and generated an approximate funding of $5 million.

REFEREED JOURNAL PUBLICATIONS

1.A. Rohatgi, T. R. Viverito, and L. H. Slack, "Electrical and Optical Properties of Tin Oxide Films", Journal of American Ceramic Society, vol. 56, no. 6, pp. 278‑279, June 1974.

2.A. Rohatgi, T. R. Viverito, and L. H. Slack, "Materials for Efficient Reflection of Thermal Energy: Doped Tin Oxide Films", Reviews on High Temperature Materials, vol. 3, no. 2, pp. 139‑151, 1976.

3.A. Rohatgi, S. R. Butler, F. J. Feigl, H. W. Kraner, and K. W. Jones, "Sodium Passivation in Hcl Oxide Films on Si", Applied Physics Letters, vol. 30, no. 2, pp. 104‑106, 1977.

4.A. Rohatgi, S. R. Butler, F. J. Feigl, H. W. Kraner, and R. W. Jones, "Chlorine Incorporation in Hcl Oxides", Journal of Electrochemical Society, vol. 126, no. 1, pp. 143‑149, 1979.

5.A. Rohatgi, S. R. Butler, and F. J. Feigl, "Mobile Sodium Ion Passivation in Hcl Oxides", Journal of Electrochemical Society, vol. 126, no. 1, pp. 149‑154, 1979.

6.J. W. Chen, A. G. Milnes, and A. Rohatgi, "Titanium in Silicon as a Deep Level Impurity", Journal of Solid State Electronics, vol. 22, no. 9‑D, pp. 801‑808, 1979.

7.A. Rohatgi, "Application of DLTS Technique to Study Junctions and Interfaces", Vacuum‑Surfaces‑Thin Films, K. L. Chopra and T. C. Goel (eds.), Vanity Books, pp. 115‑133, 1979.

8.A. Rohatgi, J. R. Davis, R. H. Hopkins, P. Rai‑Choudhury, P. G. McMullin, and J.R. McCormick, "Effect of Titanium Copper and Iron on Silicon Solar Cells", Journal of Solid State Electronics, vol. 23, pp. 415‑422, 1980.

9.A. Rohatgi and P. Rai‑Choudhury, "Process Induced Effects on Lifetime and Defects in Float‑Zone Silicon", Journal of Electrochemical Society, vol. 127, no. 5, pp. 1136‑1139, 1980.

10.R. B. Campbell and A. Rohatgi, "Investigation of Contact Systems for Silicon Solar Cells", Journal of Electrochemical Society, vol. 127, no. 12, pp. 2702‑2704, 1980.

11.J. R. Davis, A. Rohatgi, R. H. Hopkins, P. Rai‑Choudhury, J. R. McCormick, and P.D. Blais, "Impurities in Silicon Solar Cells," IEEE Transactions on Electron Devices, vol. ED‑27, no. 4, pp. 677‑687, 1980.

12.A. Rohatgi, R. H. Hopkins, J. R. Davis, R. B. Campbell, H. C. Mollenkopf, and J.R. McCormick, "The Impact of Molybdenum on Silicon and Silicon Solar Cell Performance", Journal of Solid State Electronics, vol. 23, pp. 1185‑1190, 1980.

13.A. Rohatgi, R. H. Hopkins, and J. R. Davis, "The Properties of Polycrystalline Silicon Solar Cells with Controlled Titanium Additions", IEEE Transactions on Electron Devices, vol. ED‑28, no. 1, pp. 103‑108, 1981.

14.K. W. Loh, D. K. Schroder, R. C. Clarke, A. Rohatgi, and G. W. Eldridge, "Low Leakage Current GaAs Diodes", IEEE Transactions on Electron Devices, vol. ED‑28, no. 7, pp. 796‑800, 1981.

15.L. B. Ta, H. M. Hobgood, A. Rohatgi, and R. N. Thomas, "Effects of Stoichiometry on Thermal Stability of Undoped Semi‑Insulating GaAs", Journal of Applied Physics, vol. 53, no. 8, pp. 5771‑5775, 1982.

16.A. Rohatgi, J. R. Davis, R. H. Hopkins, and P. G. McMullin, "A Study of Grown‑In Impurities in Silicon by DLTS", Journal of Solid State Electronics, vol. 26, no. 11, pp. 1039‑1049, 1983.

17.A. Rohatgi and P. Rai‑Choudhury, "Defects and Carrier Lifetime in Silicon", Silicon Processing ASTM STP 804, D. C. Gupta (ed.), American Society of Testing and Materials, pp. 389‑404, 1983.

18.A. Rohatgi and E. F. Federmann, "Importance and Consideration of High Efficiency Solar Cells", Solar Cells, vol. 12, pp. 177‑183, 1984.

19.A. Rohatgi and P. Rai‑Choudhury, "Design, Fabrication, and Analysis of 17‑18% Efficient Surface Passivated Silicon Solar Cells", IEEE Transactions on Electron Devices, vol. ED‑31, no. 5, pp. 596‑601, 1984.

20.R. Singh, S. J. Fonash, A. Rohatgi, P. Rai‑Choudhury, and J. Gigante, "A Low Temperature Process for Annealing Extremely Shallow As+ Implanted n+/p Junctions", Journal of Applied Physics, vol. 55, no. 4, pp. 867‑870, 1984.

21.S. J. Fonash, R. Singh, A. Rohatgi, P. Rai‑Choudhury, P. J. Caplan, and E. H. Pointdexter, "Silicon Damage Caused by CCl4 Reactive Ion Etching: Its Characterization and Removal by Rapid Thermal Annealing, Journal of Applied Physics, vol. 58, no. 2, pp. 862‑866, 1985.

22.X. C. Mu, S. J. Fonash, B. Y. Yang, K. Vedam, A. Rohatgi, and J. Riger, "Ar Ion Beam and CCl4 Reactive Ion Etching: A Comparison of Etching Damage and of Damage

Passivation by Hydrogen", Journal of Applied Physics, vol. 58, no. 11, pp. 4282‑4291, 1985.

23.A. Rohatgi, "High Efficiency Silicon Solar Cells ‑ Opportunity and Challenge", Proceedings of the SPIE Critical Reviews of Technology Series-Photovoltaics, vol. 543, pp. 20‑27, April 1985.

24.A. Rohatgi, "Review of High Efficiency Solar Cells", Proceedings of SPIE ‑ Photovoltaics for Commercial Solar Power Applications, vol. 706, pp. 15‑21, 1986.

25.A. Rohatgi, P. Rai‑Choudhury, S. J. Fonash, P. Lester, R. Singh, P. J. Caplan, and E. H. Pointdexter, "Characterization and Control of Silicon Surface Modification Produced by CCl4 Reactive Ion Etching", Journal of Electrochemical Society, vol. 133, no. 2, pp. 408‑416, 1986.

26.A. Rohatgi and P. Rai‑Choudhury, "Approach Toward 20% Efficient Solar Cells", IEEE Transactions on Electron Devices, vol. ED‑33, no. 1, pp. 1‑7, 1986.

27.X. C. Mu, S. J. Fonash, A. Rohatgi, and J. Riger, "Comparison of the Damage and Contamination Produced by CF4 and CF4/H2 Reactive Ion Etching", Applied Physics Letters, vol. 48, no. 17, pp. 1147‑1149, April 1986.

28.R. Sinharoy, R. A. Hoffman, A. Rohatgi, R. F. C. Farrow, and J. H. Riger, "Epitaxial Growth of LaF3 on GaAs (111)", Journal of Applied Physics, vol. 59, no. 1, pp. 273‑275, 1986.

29.A. Rohatgi, D. L. Meier, P. Rai‑Choudhury, S. J. Fonash, and R. Singh, "Effect of Low‑Energy Hydrogen Ion Implantation on Dendritic Web Silicon Solar Cells", Journal of Applied Physics, vol. 59, pp. 4167‑4171, June 1986.

30.R. H. Hopkins and A. Rohatgi, "Impurity Effects in Silicon for High Efficiency Solar Cells", Journal of Crystal Growth, vol. 75, pp. 67‑79, 1986.

31.A. Rohatgi and P. Rai‑Choudhury, "High Efficiency Silicon Solar Cells: Development, Current Issues, and Future Directions", Solar Cells, vol. 17, pp. 119‑133, 1986.

32.R. Singh, S. J. Fonash, and A. Rohatgi, "Interaction of Low‑Energy Implanted Atomic H with Slow and Fast Diffusing Metallic Impurities in Si", Applied Physics Letters, vol. 49, no. 13.9, pp. 800‑802, 1986.

33.S. J. Fonash and A. Rohatgi, "RIE Damage and Its Control in Silicon Processing", Emerging Semiconductor Technology, (D. C. Gupta and P. H. Langer, eds.), American Society for Testing and Materials, ASTM STP 960, pp. 163‑172, 1986.

34.A. Rohatgi, S. K. Pang, T. K. Gupta, and W. D. Straub, "The Deep Level Transient Spectroscopy Studies of ZnO Varistor as a Function of Annealing", Journal of Applied Physics, vol. 63, pp. 5375‑5379, 1988.

35.A. Rohatgi, S. A. Ringel, J. Welch, E. Meeks, K. Pollard, A. Erbil, C. J. Summers, P. V. Meyers, and C. H. Liu, "Growth and Characterization of Polycrystalline CdMnTe and CdZnTe Thin Films for Solar Cells", Solar Cells, vol. 24, pp. 185‑194, 1988.

36.R. K. Dawless, R. L. Troup, D. L. Meier, and A. Rohatgi, "Production of Extreme Purity Aluminum and Silicon by Fractional Crystallization Processing", Journal of Crystal Growth, vol. 89, pp. 68‑74, 1988.

37.A. B. Dewald, Jr., R. L. Frost, S. A. Ringel, J. P. Schaffer, and A. Rohatgi, "Positron Annihilation Spectroscopy of AlGaAs/GaAs Interfaces in MOCVD‑Grown GaAs Heterojunction Solar Cells", Journal of Vacuum Science and Technology, vol. A6, pp. 2248‑2252, 1988.

38.R. L. Frost, A. B. Dewald, Jr., J. P. Schaffer, A. Rohatgi, B. Nielson, and K. G. Lynn, "Slow Positron Annihilation Spectroscopy of Hetero and Homo Junctions of GaAs Based Semiconductor Thin Films", Thin Solid Films, vol. 166, pp. 349‑357, 1988.

39.Z. C. Feng, R. Sudharsanan, S. Perkowitz, A. Erbil, K. T. Pollard, and A. Rohatgi, "Raman Scattering Characterization of High‑Quality CdMnTe Films Grown by

Metalorganic Chemical Vapor Deposition", Journal of Applied Physics, vol. 64, pp. 6861‑6863, 1988.

40.T. F. Ciszek, T. Wang, T. Schuyler, and A. Rohatgi, "Some Effects of Crystal Growth Parameters on Minority Carrier Lifetime in Float‑Zoned Silicon", Journal of Electrochemical Society, vol. 136, no. 1, pp. 230‑234, 1989.

41.Z. C. Feng, S. Perkowitz, R. Sudharsanan, A. Erbil, K. T. Pollard, and A. Rohatgi, "Photoluminescence of CdMnTe Films Grown by Metalorganic Chemical Vapor Deposition", Journal of Applied Physics, vol. 66, pp. 1711‑1716, 1989.

42.S. A. Ringel, A. Rohatgi, and S. P. Tobin, "An Approach Toward 25% Efficient GaAs Heteroface Solar Cells", IEEE Transactions on Electron Devices, vol. 36, no. 7, pp. 1230‑1237, 1989.

43.R. Sudharsanan, Z. C. Feng, S. Perkowitz, A. Rohatgi, K. T. Pollard, and A. Erbil, "Characterization of MOCVD-Grown CdMnTe Films by Infrared Spectroscopy", Journal of Electronic Materials, vol. 18, no. 3, pp. 453‑455, 1989.

44.A. Rohatgi, J. P. Schaffer, A. B. Dewald, and R. L. Frost, "Positron Annihilation Spectroscopy: Applications to Si, ZnO, and Multilayer Semiconductor Structures", Journal of Electronic Materials, vol. 18, pp. 721‑728, 1989.

45.T. K. Gupta, W. D. Straub, M. S. Ramanachalam, J. P. Schaffer, and A. Rohatgi, "Grain Boundary Characterization of ZnO Varistors by Positron Annihilation Spectroscopy", Journal of Applied Physics, vol. 66, no. 12, pp. 6132‑6137, 1989.

46.A. Rohatgi, S. A. Ringel, R. Sudharsanan, P. M. Meyers, C. Liu, and V. Ramanathan, "Investigation of CdZnTe, CdMnTe, and CdTe Polycrystalline Films for Photovoltaic Applications", Solar Cells, vol. 27, no. 1, pp. 219‑230, 1989.

47.S. A. Ringel, R. Sudharsanan, A. Rohatgi, M. S. Owens, and H. P. Gillis, "Effects of Annealing and Surface Preparation on the Properties of MBE‑Grown Polycrystalline CdZnTe Films", Journal of Vacuum Science and Technology, vol. A8, no. 3, pp. 2012‑2019, May 1990.

48.S. A. Ringel, R. Sudharsanan, A. Rohatgi, and W. B. Carter, "A Study of Polycrystalline Cd(Zn,Mn)Te/CdS Films and Interfaces", Journal of Electronic Materials, vol. 19, no. 3, pp. 259‑263, 1990.

49.S. K. Pang, A. Rohatgi, B. L. Sopori, and G. Fiegl, "A Comparison of Minority‑Carrier Lifetime in As‑Grown and Oxidized Float‑Zone, Magnetic Czochralski Silicon, and Czochralski Silicon", Journal of Electrochemical Society, vol. 137, no. 6, pp. 1977‑1980, June 1990.

50.R. Sudharsanan and A. Rohatgi, "Investigation of Metalorganic Chemical Vapor Deposition Grown CdTe/CdS Solar Cells", Solar Cells, vol. 31, pp. 143‑150, 1991.

51.A. Rohatgi, R. Sudharsanan, S. A. Ringel, and M. McDougal, "Growth and Process Optimization of CdTe and CdZnTe Polycrystalline Films for High Efficiency Cells", Solar Cells, vol. 30, pp. 109‑122, 1991.

52.S. K. Pang and A. Rohatgi, "Effect of Oxygen Concentration on Lifetime in Magnetic Czochralski Silicon", Journal of Electrochemical Society, vol. 138, pp. 523‑527, 1991.

53.M. S. Ramanachalam, A. Rohatgi, J. P. Schaffer, and T. K. Gupta, "Characterization of ZnO Varistor Degradation Using Lifetime Positron‑Annihilation Spectroscopy", Journal of Applied Physics, vol. 69, no. 12, pp. 8380‑8386, June 1991.

54.S. K. Pang and A. Rohatgi, "Record High Recombination Lifetime in Oxidized Magnetic Czochralski Silicon", Applied Physics Letters, vol. 59, no. 2, pp. 196‑197, July 1991.

55.S. A. Ringel, A. W. Smith, M. H. McDougal, and A. Rohatgi, "Effects of CdCl2 on Electronic Properties of Molecular Beam Epitaxially Grown CdTe/CdS Heterojunction Solar Cells", Journal of Applied Physics, vol. 70, no. 2, pp. 881‑889, July 1991.

56.A. Rohatgi, J. P. Schaffer, G. Augustine, and M. S. Ramachalam, "A Review of Selected Techniques for Characterizing Radiation Induced Defects in Solar Cells", Journal of Solar Cells, vol. 3, no. 4, pp. 379‑394, September 1991.

57.S. A. Ringel and A. Rohatgi, "The Effects of Trap Induced Lifetime Variations on the Design and Performance of High Efficiency GaAs Solar Cells", IEEE Transactions on Electron Devices, vol. 38, no. 11, pp. 2401‑2409, November 1991.

58.A. W. Smith and A. Rohatgi, "Reevaluation of the Derivatives of the Half Order Fermi Integrals", Journal of Applied Physics, vol. 73,no. 11, pp. 7030‑7034, June 1993.

59.A. W. Smith and A. Rohatgi, "Non Isothermal Extension of the Scharfetter‑Gummel Technique for Lot Carrier Transport in Heterostructure Simulations", IEEE Transactions on Computer‑Aided Design of Integrated Circuits and Systems, vol. 12, No. 10, pp. 1515‑1513, October 1993.

60.A.W. Smith and A. Rohatgi, "A New Texturing for Producing High Efficiency Solar Cells with No Antireflection Coatings", Solar Energy Materials and Solar Cells, vol. 29, pp. 51‑65, 1993.

61.A.W. Smith and A. Rohatgi, "Ray Tracing Analysis of the Inverted Pyramid Texturing Geometry for High Efficiency Silicon Solar Cells, Solar Energy Materials and Solar Cells, vol. 29, pp. 37‑49, 1993.

62.G. Augustine, N.M. Jokerst and A. Rohatgi, "Base Doping Optimization for Radiation Hard Si, GaAs, and InP Solar Cells, IEEE Transactions on Electron Devices, vol. 39, no. 10, pp. 2395‑2400, October 1992.

63.G. Augustine, N.M. Jokerst, and A. Rohatgi, "Single-Crystal Thin Film InP: Fabrication and Absorption Measurements," Applied Physics Letters, vol. 61, no. 12, pp. 1429‑1431, September 1992.

64.A. Rohatgi, "A Study of Efficiency Limiting Defects in Polycrystalline CdTe/CdS Solar Cells", International Journal of Solar Energy, vol. 12, pp. 37‑49, 1992.

65.A. Rohatgi, A. Bhat, and H.C. Chou, "An Improved Understanding of Efficiency Limiting Defects in Polycrystalline CdTe/CdS Solar Cells", American Institute of Physics Conference Proceedings #268. Photovoltaic Advanced Research and Development Project, R. Noufi ed., pp. 243‑249, October 1992.

66.A. Rohatgi, P. Sana, Z. Chen, and J. Salami, "Approach Towards High Efficiency Polycrystalline Silicon Solar Cells", American Institute of Physics Conference

Proceedings #268. Photovoltaic Advanced Research and Development Project, R. Noufi ed., pp. 413‑420, October 1992.

67.W.A. Doolittle and A. Rohatgi, "A Novel Computer Based Pseudo‑Logarithmic Capacitance/Conductance DLTS System Specifically Designed for Transient Analysis", Reviews of Scientific Instruments, vol. 63, no. 12, pp. 5733‑5741, December 1992.

68.A. Rohatgi, E. R. Weber, and L.C. Kimberling, "Opportunities in Silicon Photovoltaics and Defect Control in Photovoltaic Materials", Journal of Electronic Materials, vol. 22, no. 1, pp. 65‑72, 1993.

69.P. Sana, J. Salami, and A. Rohatgi, "Fabrication and Analysis of High Efficiency Polycrystalline Silicon Solar Cells", IEEE Transactions in Electron Devices, vol. 40, no. 8, pp. 1461‑1468, August 1993.

70.Z. Chen, P. Sana, J. Salami, and A. Rohatgi, "A Novel and Effective PECVD SiO2/SiN Antireflection Coating for Si Solar Cells," IEEE Transactions on Electron Devices, vol. 40, no. 6, pp. 1161‑1165, June 1993.

71.Z. Chen, S.K. Pang, K. Yasutake, and A. Rohatgi, "Plasma Enhanced Chemical Vapor Deposited Oxide for Low Surface Recombination Velocity and High Effective Lifetime in Silicon", Journal of Applied Physics, vol. 74, no. 4, pp. 2856‑2859, August 1993.

72.M.S. Ramanachalam, A. Rohatgi, W.B. Carter, J.P. Schaffer, and T.K. Gupta, "Photoluminescence and PAS Study of ZnO Varistor Stability", Journal of Applied Physics, vol. 24, no. 4, 1995.

73.Z. Chen, K. Yasutake, A. Doolittle and A. Rohatgi, "Record Low SiO2/Si Interface State Density for Low Temperature Oxides Prepared by Direct Plasma‑Enhanced Chemical Vapor Deposition", Applied Physics Letters, vol. 63, no. 15, pp. 1‑3, October 1993.

74.H.C. Chou and A. Rohatgi, "The Impact of MOCVD Growth Ambient on Carrier Transport, Defects, and Performance of CdTe/CdS Heterojunction Solar Cells", Journal of Electronic Materials, vol. 23, no. 1, pp. 1‑7, January 1994.

75.K. Yasutake, Z. Chen, S.K. Pang and A.Rohatgi, "Modeling and Characterization of Interface State Parameters and Surface Recombination Velocity at Plasma Enhanced Chemical Vapor Deposited SiO2‑Si Interface", Journal of Applied Physics, vol. 75, no. 4, pp. 2048-2054, February 1994.

76.S.K. Pang and A. Rohatgi, "A New Methodology for Separating Schokley‑Read‑Hall Lifetime and Auger Recombination Coefficients from Photoconductivity Decay Technique, Journal of Applied Physics, vol. 74, no. 9, pp. 5554‑5560, November 1993.

77.P. Sana and A. Rohatgi, "Gettering and Hydrogen Passivation of EFG Multicrystalline Silicon Solar Cells by Al Diffusion and Forming Gas Anneal", Applied Physics Letters, vol. 64, no. 1, pp. 97‑99, January 1994.

78.W.A. Doolittle and A. Rohatgi, "A New Figure of Merit and Methodology for Quantitatively Determining Defect Resolution Capabilities in Deep Level Transient Spectroscopy Analysis", Journal of Applied Physics, vol. 75, no. 9., pp. 4570-4575, May 1994.

79.W.A. Doolittle and A. Rohatgi, "Comparison of Covariance Linear Predictive Modelling to the Modulation Function Method for Use in Deep Level Transient Spectroscopy", Journal of Applied Physics, vol. 75, no. 9., pp. 4560-4569, May 1994.

80.A. Rohatgi, Z. Chen, P. Sana, N. Evers, R. Ramanachalam and A. Doolittle, "Gettering and Passivation Techniques for Quality Enhancement of Multicrystalline Silicon", American Institute of Physics Conference Proceedings #306. 12th Annual Photovoltaics Review, pp. 505-518, October 1993.

81.A. Rohatgi, H.C. Chou, S. Kamra and A.K. Bhat, "Investigation of Efficiency Limiting Defects and Rapid Thermal Processing of MOCVD Grown CdTe Solar Cells", American Institute of Physics Conference Proceedings #306. 12th Annual Photovoltaics Review, pp. 354-363, October 1993.

82.S.K. Pang, A. Rohatgi, and A.W. Smith, "Effect of Trap Location and Trap‑Assisted Auger Recombination on Silicon Solar Cell Performance", IEEE Transactions on Electron Device, vol. 42, no.4, pp. 662-668, April 1995.

83.Z. Chen, A. Rohatgi, R.O. Bell and J.P. Kalejs, "Defect Passivation in Multicrystalline-Si Materials by Plasma Enhanced Chemical Vapor Deposition of SiO2/SiN Coatings", Applied Physics Letters, vol. 65, no. 16, pp. 2078-2080, October 1994.

84.H.C. Chou, A.K. Bhat, S. Kamra and A. Rohatgi, "An Investigation of Photocurrent Loss due to Reflectance and Absorption in CdTe/CdS Heterojunction Solar Cells", Journal of Electronic Materials, vol. 23, no. 7, pp. 681-686, July 1994.

85.A. Rohatgi, Z. Chen, P. Sana, J. Crotty, and J. Salami, "Gettering and Passivation Techniques of High Efficiency Multicrystalline Silicon Solar Cells", Solar Energy Materials and Solar Cells, vol. 34, nos. 1-4, pp. 227-236, September 1994.

86.A. Rohatgi, Z. Chen, P. Doshi, T. Pham, and D. Ruby, "High Efficiency Silicon Solar Cells by Rapid Thermal Processing," Applied Physics Letters, vol. 65, no. 16, pp. 2087-2089, October 1994.

87.H.C. Chou, A. Rohatgi, E.W. Thomas, S. Kamra, and A.K. Bhat, "Effects of Cu on CdTe/CdS Heterojunction Solar Cells with Cu/Au Contacts," Journal of the Electrochemical Society, vol. 142, no. 1, pp. 254-259, January 1995.

88.J.B. Lee, Z. Chen, M.G. Allen, and A. Rohatgi, "A Miniaturized High Voltage Solar Cell Array as an Electrostatic MEMS Power Supply," Journal of Microelectromechanical Systems, vol. 4, no. 3, pp. 102-108, September 1995.

89.A. Rohatgi, Z. Chen, P. Sana, N. Evers, P. Lolgen, and R.A. Steeman, "Gettering and Passivation for High Efficiency Multicrystalline Silicon Solar Cells,"OPTOELECTRONICS - Devices and Technologies, vol. 9, no. 4, pp.523-536, December 1994.

90.C. Leguijt, P. Lolgen, J.A. Eikelboom, P.H. Amesz, R.A. Steeman, W.C. Sinke, P.M. Sarro, L.A. Verhoef, P.-P. Michiels, Z.H. Chen and A. Rohatgi, "Very Low Surface Recombination Velocities on 2.5 Ω cm Si Wafers, Obtained With Low-Temperature PECVD of Si-Oxide and Si-Nitride," Solar Energy Materials and Solar Cells, vol. 34, nos. 1-4, pp. 177-181, 1994.

91.P. Doshi, A. Rohatgi, M. Ropp, Z. Chen and D.L. Meier, Rapid Thermal Processing of High-Efficiency Silicon Solar Cells with Controlled In-Situ Anealing, Solar Energy Materials and Solar Cells, vol. 41/42, pp. 31-39, 1996.

92.G. Augustine, A. Rohatgi, N.M. Jokerst and R. Dhere, Concentration-Dependent Near and Above Band Edge Absorption in Doped InP and Its Importance in Solar Cell Modelling, Journal of Applied Physics, vol. 78, no. 4, pp. 2666-2670, August 1995.

93.H.E. Elgamel, A.M. Barnett, A. Rohatgi, Z. Chen, C.Vinckler, J.Nijs, and R. Mertens, Efficient Combination Schemes of High Efficiency Multicrystalline Silicon Solar Cells, Journal of Applied Physics, vol. 78, no. 5, pp.3457-61, September 1995.

94.A.Rohatgi, H.C. Chou, N.M. Jokerst, E.W. Thomas, C. Ferekides, S. Kamra, Z.C. Feng, and K.M.Dugan, Effects of CdTe Growth Conditions and Techniques on the Efficiency Limiting Defects and Mechanisms in CdTe Solar Cells, AIP Conference Proceedings,353, pp. 368-375, May 1995.

95.A.Rohatgi, P. Sana, L. Cai, W.A. Doolittle, S. Kamra, P. Doshi, T. Krygowski, and G. Crotty, Fabrication and Analysis of High Efficiency Multicrystalline Silicon Solar Cells, AIP Conference Proceedings, 353, pp. 126-133, May 1995.

96.B.L.Sopori, X. Deng, J.P. Benner, A.Rohatgi, P. Sana, S.K. Estreicher, Y.K. Park,

M.A. Roberson, Hydrogen in Silicon: A Discussion of Diffusion and Passivation Mechanisms, Solar Energy Materials & Solar Cells, 41/42, pp.159-169, July 1995.

97.L.Cai, and A.Rohatgi, Effect of Post PECVD Photo-assisted Anneal on Multicrystalline Silicon Solar Cells, IEEE Transactions on Electron Devices, vol. 44, no. 1, pp. 97-103, August 1995.

98.H.C. Chou, A.Rohatgi, N.M.Jokerst, S.Kamra, S.R. Stock, S.L. Lowrie, R.K.Ahrenkiel and D.H. Levi, Approach Toward High Efficiency CdTe/CdS Heterojunction Solar Cells, Journal of Material Chemistry Physics, 43, pp. 178-182, May 1995.

99.H.C. Chou, A.Rohatgi, N.M. Jokerst,E.W. Thomas, and S.Kamra, Copper Migration in CdTe Hetereojunction Solar Cells, IEEE Transactions on Electron Device, vol. 25, no. 7, pp.1093-1098, 1995.

100.Z.C. Feng, G.K.Lim, H.C.Chou, A.T.S. Wee, A.Rohatgi, and K.L.Tan, Correlations Between the MOCVD-grown CdTe/CdS/SnO2/glass Solar Cell Efficiencies and the Interface/Surface Properties, Journal of Applied Physics, vol.79, no.4, pg.2151-2153, February 1996.

101.S.S. Han, L.Cai, G. May, and A. Rohatgi, Modeling the Growth of PECVD Silicon Nitride Films for Polysilicon Solar Cell Applications Using Neural Networks, IEEE Transactions on Semiconductor Manufacturing, vol.9, no.3, pp. 303-311, August 1995.

102.P.Doshi, J.Mejia, K.Tate, A.Rohatgi, Integration of Screen-Printing and Rapid Thermal Processing Technologies for Silicon Solar Cell Fabrication, IEEE Electron Device Letters, vol. 17, no. 8, pp. 404-409, August 1996.

103.A. Rohatgi and S. Narasimha, Design, Fabrication, and Analysis of Greater than 18% Efficient Multicrystalline Silicon Cells, Solar Cell and Solar Energy Materials, vol. 48, pp.187-197, November, 1996.

104.Z.C. Feng, A. Rohatgi, C.C. Tin, R-Hu, A.T.S. Wee, and K.P. Se, Structural

Optical and Surface Science Studies of 4H-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition, Journal of Electronic Materials, vol. 25, pp. 917-923, 1996.

105.L.Cai, D. Yang, M.A. El-Sayed, and A.Rohatgi, Effects of Rapid Thermal Anneal on Refractive Index and Hydrogen Content of Plasma-Enhanced Chemical Vapor Deposited Silicon Nitride Films,Applied Physics Letters, vol. 80, no. 9, pp. 5384-5388, November, 1996.

106.L. Cai, S. Han, G. May, S. Kamra, T. Krygowski, and A. Rohatgi, Optimization of Saturation Current Density of PECVD SiN Coated Phosphorus Diffused Emitters Using Neural Network Modeling, Journal of Electronic Materials, vol. 25, no. 11, pp. 1784-1789, November 1996.

107.A. Rohatgi, S. Narasimha, S. Kamra, Fabrication and Analysis of Record High 18.2% Efficient Solar Cells on Multicrystalline Silicon Material, IEEE Electron Device Letters, vol. 17, no. 8, pp. 401-403, August 1996.

108.T. Krygowski, and A. Rohatgi, A Novel Approach Towards the Simultaneous Diffusion of Boron and Phosphorus in Silicon, Journal of Electrochemical Society, vol 144, pp. 346-349, January, 1997.

109.M. Ropp, M. Begovic, A. Rohatgi and R. Long, Design Consideration for Large Roof-Integrated Photovoltaic Arrays, Progress in Photovoltaics, vol. 5, pp. 55-67, September, 1997.

110.P. Doshi, J.Mejia, K. Tate and A. Rohatgi, Modeling and Characterization of High-Efficiency Silicon Solar Cells Fabricated by Rapid Thermal Processing, Screen Printing, and Plasma Enhanced Chemical Vapor Deposition, IEEE Transactions of Electron Devices, vol. 44, no. 9, pp. 1417-1424, September, 1997.

111.P. Doshi, G.E. Jellison and A. Rohatgi, Characterization and Optimization of Absorbing PECVD Antireflection Coatings for Silicon Photovoltaics, Journal of Applied Optics, vol.36, no. 30, pp. 7826-7837, October, 1997.

112.A. Rohatgi, S. Narasimha and L. Cai, Gettering and Passivation of High Efficiency Multicrystalline Silicon Solar Cells, American Institute of Physics Conference Proceedings, vol. 394, pp. 199-213, November,1997.

113.T. Krygowski and A. Rohatgi, A Simultaneously Diffused Textured, In-Situ Oxide AR-Coated Solar Cell Process for High Efficiency Silicon Solar Cells, IEEE Electron Devices Letters, vol. 45, no. 1, pp. 194-199, January 1998.

114.S. Narasimha and A. Rohatgi, Fabrication and Characterization of 18.6% Efficient on Multicrystalline Silicon Solar Cells IEEE Transactions on Electron Devices, vol. 45, no 8, pp. 1776-1783 August, 1998.

115.P.Doshi and A. Rohatgi, 18% Efficient Silicon Photovoltaic Devices by Rapid Thermal Diffusion and Oxidation, IEEE Transactions on Electron Devices, vol. 45, no. 8, pp. 1710-1716, August, 1998.

116.A. Rohatgi, P. Doshi and T. Krygowski, Pushing the Frontiers of Silicon PV Technologies: Novel Approaches to High Efficiency, Manufacturable Silicon Cells,American Institute of Physics , vol. 404, pp. 109-116, March, 1997.

117.S. Narasimha, G. Crotty, A. Rohatgi, and D.L. Meier, Back Surface Field Effects in the 17.3 % Efficient n-type Dendritic Web Silicon Solar Cell, Solid-State Electronics, vol. 42, no. 9, pp. 1631-1640, November, 1997.

118.R.L. Wallace, J.I. Hanoka, A. Rohatgi and G. Crotty, Thin Film String Ribbon, Solar Energy Materials and Solar Cells, vol. 48, pp. 179-186, November, 1997.

119.L. Cai, M. Zou, S. Han, G. May and A. Rohatgi, Investigation of the Properties of Plasma-Enhanced Chemical Vapor Deposited Silicon Nitride and Its Effect on Silicon Surface Passivation, Journal of Applied Physics, vol. 83, no. 11, pp. 5885-5889,

June 1998.

120.S. Narasimha and A. Rohatgi, Effective Passivation of the Low Resistivity Silicon Surface by a Rapid Thermal Oxide/Plasma Silicon Nitride Stack, Applied Physics Letter, vol. 72, pp. 1872-1874, April, 1998.

121.M.E. Ropp, M. Begovic and A. Rohatgi, Prevention of Islanding in Grid-Connected Photovoltaic Systems, Journal of Progress in Photovoltaics, volume 7, Issue 1, 1999 pg. 39-59, February.

122.M.E. Ropp, M. Begovic, A. Rohatgi, Analysis and Performance Assessment of the Active Frequency Drift Method of Islanding Prevention, IEEE Power Engineering Society, April, 1998.

123.D. Ratakonda. R. Singh, L. Vedula, A. Rohatgi, J. Mejia, and S. Narayanan, Rapid Thermal Processing of Screen Printed Ohmic Contacts, Journal of Electrochemical Society, vol. 144, no. 9, pp. 3237-3242, September, 1997.

124.G.E. Jellison, Jr., F.A. Modine, P. Doshi, A. Rohatgi, Spectroscopic Ellipsometry Characterization of Thin-Film Silicon Nitride, pp. 193-197, Thin Solid Films, July, 1998.

125.A. Rohatgi, P. Doshi, J. Moschner, T. Lauinger, A. Aberle and D.S. Ruby, Comprehensive Study of Rapid, Low-Cost Silicon Surface Passivation Technologies, IEEE Transaction on Electron Devices, vol. 47, #5 pp. 987-993, May, 2000.

126.A. Ebong, P. Doshi, S. Narasimha, A. Rohatgi J. Wang and M.A. El-Sayed, The Effect of Low and High Temperature Anneals on the Hydrogen Content and Passivation of Si Surface Coated with SiO2 and SiN Films, Journal of Electrochemical Society, vol. 146, no. 5, pp. 1921-1924, May 1999.

48. T. Krygowski, A. Rohatgi and T. Selzer, A Novel Processing Technology for High-Efficiency Silicon Solar Cells, Journal of the Electrochemical Society, vol. 146, no. 3, March 1999.

128.A. Rohatgi, S. Narasimha, P. Doshi, A. Ebong, and J. Moschner, Rapid Thermal Processing and Screen-Printing for Low Cost Silicon Solar Cells, American Institute of Physics, NCPV Photovoltaics Program Review, edited by M. Al-Jassim, J.P. Thornton, and J.M. Gee, pp. 354-360, March 1999.

129.A. Rohatgi and J. Moschner, Comments on 17.3% Efficiency Metal-Oxide-Semiconductor (MOS) Solar Cells with Liquid-Phase-Deposited Silicon Dioxide IEEE Electron Device Letters, vol. 19, no. 11, pp 447, November 1998.

130.A. Rohatgi, S. Narasimha, A. Ebong and P. Doshi, Understanding and Implementation of Rapid Thermal Technologies for Low-Cost High-Efficiency Silicon Solar Cells, IEEE Transaction on Electron Devices vol. 46, no. 10, pp. 1970 - 1977, October, 1999.

131.R. Singh, K.C. Cherukuri, L. Vedula, A. Rohatgi and S. Narayanan, Low Temperature Shallow Junction Formation Using Vacuum Ultraviolet Photons During Rapid Thermal Processing, vol. 70, no 13, pp. 1700-1702, March, 1997.

132.S. Narasimha, A. Rohatgi and A.W. Weeber, An Optimized Rapid Aluminum Back Surface Field Technique for Silicon Solar Cells, IEEE Transaction on Electron Devices, vol. 46, no. 7, pp. 1363-1370, July, 1999.

133.M. E. Ropp, M. Begovic, A. Rohatgi, G. Kern, R. Bonn, and S. Gonzalez, Determining the Relative Effectiveness of Islanding Detection Methods Using Phase Criteria and Nondetection Zones, IEEE Transaction on Electron Devices, vol. 15, no. 3, pp. 290-296, March, 1999.

49. R. Singh, V. Parihar, S. Venkataraman, K.F. Poole, R.P.S. Thakur, and A. Rohatgi

Changing from Rapid Thermal Processing to Rapid Photothermal Processing:What

Does It Buy for a Particular Technology?, Materials Science in Semiconductor Processing, pp. 219-230, 1999.

50. A. Rohatgi, Fundamental Understanding and Development of High Quality Screen-Printed Contacts for Silicon Solar Cells, submitted for publication in Journal of Electronic Materials, June, 1999.

51. J. B. Lee, M.G. Allen, and A. Rohatgi, Photovoltaic On-Demand Pulse Generator as an On-Board Power Source for Electrostatic Actuator Array, SPIE Symposium on Micromachining and Microfabrication, Santa Clara, California, September 19-23, 1999.

52. A. Ebong, J. Brody, A. Rohatgi and T. Williams, Optimization of Front Metal Contact Firing Scheme To Achieve High Fill Factors On Screen Printed Silicon Solar Cells, Solar Energy Materials and Solar Cells, vol. 65, no. 1-4, pp. 613-619, January 2001.

53. D.L. Meier, H.P. Davis, R. A. Garcia, J. Salami, A. Rohatgi, A. Ebong, and P. Doshi Aluminum Alloy Back P-N Junction Dendritic Web Silicon Solar Cell, Solar Energy Materials and Solar Cells, vol. 65, no. 1-4, pp. 621-627, January 2001.

54. S. Venkataraman, R. Singh, V. Parihar, K. F. Poole, A. Rohatgi, V. Yelundur, and A.Ebong, A Study of the Effect of Ultraviolet (UV) and Vacuum Ultra Violet (VUV) Photons on the Minority Carrier Lifetime of Single Crystal Silicon Processed by Rapid Thermal and Rapid Photothermal Processing, Journal of Electronic Materials, vol. 28, no. 12, pp. 1394-1398, December,1999.

55. A. Rohatgi, A. Ebong, V. Yelundur and A. Ristow, Rapid Thermal Processing of Next Generation Silicon Solar Cells, Progress in Photovoltaics Research and Applications, vol. 8, pp. 515-527, July, 2000.

56. V. Yelundur, A. Rohatgi, A. Ebong, A.M. Gabor, J. Hanoka, R.L. Wallace, Al-Enhanced PECVD SiNx induced Hydrogen Passivation in String Ribbon Silicon, Journal of Electronic Materials, vol. 30, no 5, pp. 526-529, February, 2000.

57. A. Ebong, J. Brody, A. Rohatgi, and T. Williams, Optimization of Front Metal Contact Firing Scheme To Achieve High Fill Factors On Screen Printed Silicon Solar Cells, Solar Energy Materials & Solar Cells, vol. 65, pp. 613-619, February, 2001.

58. J.Jeong, M. Rosenblum, J. Kalejs and A. Rohatgi, Hydrogenation of Defects in Edge-Defined Film-Fed Grown Aluminum-Enhanced Plasma Enhanced Chemical Vapor Deposited Silicon Nitride Multicrystalline Silicon, Journal of Applied Physics, vol. 87, #10, pp 7551-7557, May, 2000.

59. B. Damiani, A.H. Ristow, A.Ebong, and A. Rohatgi, Design Optimization for Higher Stabilized Efficiency and Reduced Light Induced Degradation in Boron Doped Czochralski Silicon Solar Cells, Progress in Photovoltaics, vol. 10, pp. 185-193, January, 2001.

60. A. Ebong, M. Hilali, A. Rohatgi, D. Meier, and D.S. Ruby, Belt Furnace Gettering and Passivation of n-Web Silicon for High Efficiency Screen-Printed Front Surface Field Solar Cells, Progress in Photovoltaics, vol. 9, pp. 327-332, February, 2001.

61. J. Brody, and A. Rohatgi, “Analytical Approximation of Effective Surface Recombination Velocity of Dielectric-Passivated P-Type Silicon,” Solid State Electronics, vol. 45, pp. 1549-1557, February, 2001.

62. J. Brody, A. Rohatgi, and V. Yelundur, Bulk Resistivity Optimization for Low Bulk-Lifetime Silicon Solar Cells, Progress in Photovoltaics, vol. 9, pp. 273-285, February, 2001.

63. M.Hilali, A. Ebong, A. Rohatgi and D.L. Meier, “Resistivity Dependence of Minority Carrier Lifetime and Cell Performance in P-Type Dendritic Web Silicon Ribbon,” Solid State Electronics, vol. 45, pp.1973-1978, June, 2001.

64. J. Brody, and A. Rohatgi, “Review and Comparison of Equations Relating Bulk Lifetime and Surface Recombination Velocity to Effective Lifetime Measured Under Flash Lamp Illumination,” Journal of Applied Physics, vol. 77, pp. 293-301, July 2002.

150.A. Ebong, Y.H. Cho, M. Hilali, A. Rohatgi and D. Ruby, “Rapid Thermal Technologies for High Efficiency Silicon Solar Cells,” Solar Energy Materials & Solar Cells, vol 74. pp. 51-55, August, 2002.

151.A. Rohatgi, V. Yelundur, J. Jeong, A. Ebong, M.D. Rosenblum, and R.L. Wallace, “Fundamental Understanding and Implementation of Al-Enhanced PECVD SiNx Hydrogenation in Silicon Ribbons,” vol. 74, no. 1-4, pp. 117-126, Solar Energy Materials & Solar Cells, October 20, 2002.

65. J. Brody and A. Rohatgi, “Sensitivity Analysis of Two-Spectrum Separation of Surface and Bulk Components of Minority Carrier Lifetimes,” Solid State Electronics, vol. 46, pp. 859-866, March 2002.

66. V. Yelundur, A. Rohatgi, J.W. Jeong, J. Hanoka, “Improved String Ribbon Silicon Solar Cell Performance by Rapid Thermal Firing of Screen-Printed Contacts,” IEEE Transaction on Electron Devices, vol. 49, no. 8, pp 1405-1410, February 2002.

67. M. Begovic, A. Pregelj, A. Rohatgi and C. Honsberg, “Green Power: Status and Perspectives,” IEEE Transactions on Electron Devices, vol. 89, no. 12, pp 1734-1743, December 2001.

155. J. W. Jeong, A. Rohatgi, V. Yelundur, A. Ebong, M.D. Rosenblum and J.P. Kalejs, “Enhanced Silicon Solar Cell Performance by Rapid Thermal Firing of Screen Printed Metals,” IEEE Transactions on Electron Devices, vol. 48, no. 12, pp. 2836-2841, May, 2001.

156.A. Rohatgi, and J.W. Jeong, “High Efficiency Screen-Printed Silicon Ribbon Solar Cells by Effective Defect Passivation and Rapid Thermal Processing,” Applied Physics Letters, vol. 82, no. 2, pp 224-226, July, 2002.

157. D. S. Ruby, S. H. Zaidi, S. Narayanan, B.M. Damiani and A. Rohatgi, “Rie-texturing of Multicrystalline Silicon Solar Cells,” Solar Energy Materials & Solar Cells, vol. 74, pp. 133-137, October, 2002.

158. A. Rohatgi, D.S. Kim, K. Nakayashiki, V. Yelundur and B. Rounsaville, “High-Efficiency Solar Cells on Edge-Defined Film-Fed Grown (18.2%) and String Ribbon (17.8%) Silicon by Rapid Thermal Processing,” Applied Physics Letters, vol. 84, no.1, pp. 145-147, January, 2004.

159. K. Nakayashiki, V. Meemongkolkiat and A. Rohatgi, “High Efficiency Screen-Printed EFG Si Cells Through Rapid Thermal Processing-Induced Bulk Lifetime Enhancement,” Progress in Photovoltaics: Research and Application, vol. 13, no.1, pp. 17-25, 2005.

160.A. Pregelj, M. Begovic and A. Rohatgi, “Quantitative Techniques for Analysis of Large Data Sets in Renewable Distributed Generation,” IEEE Transaction on Electron Devices,

vol. 19, pp 1277-1285, February, 2004.

161. A. Rohatgi, M. Hilali and K. Nakayashiki, “High-Efficiency Screen-Printed Solar Cell on Edge-Defined Film-Fed Grown Ribbon Silicon Through Optimized Rapid Belt Co-Firing of Contacts and High-Sheet-Resistance Emitter,” Applied Physics Letters, vol 84, no.17, pp. 3409-3411, February, 2004.

162.K. Nakayashiki, D. S. Kim, A. Rohatgi, B. R. Bathey, “Understanding of the RTP-assisted Reduction of Hydrogen Dissociation from Defects in EFG Si,” Solar Energy Materials & Solar Cells, January 26-30, 2004, Chulalongkorn University, Bangkok, Thailand.

163.V. Meemongkolkiat, M. Hilali, K. Nakayashiki, and A. Rohatgi, “Process and Material Dependence of Al-BSF in Crystalline Si Solar Cells,” Solar Energy Materials & Solar Cells, January 26-30, 2004, Chulalongkorn University, Bangkok, Thailand.

164.A. Rohatgi, D. S. Kim, V. Yelundur, K. Nakayashiki, A. Upadhyaya, M. Hilali, V. Meemongkolkiat, “Record-High-Efficiency Solar Cells on Multicrystalline Materials Through Understanding and Implementation of RTP-Enhanced SiNx-induced Defect Hydrogenation,” Solar Energy Materials & Solar Cells, January 26-30, 2004, Chulalongkorn University, Bangkok, Thailand.

165.F. Jiang, M. Stavola, A. Rohatgi, D. Kim, J. Holt, H. Atwater and J. Kalejs, “Hydrogenation of Si from SiNx Films: Characterization of H introduced into the Si,” Applied Physics Letters, vol. 83, no. 5, pp. 931-933, August, 2003.

166.M. Hilali, A. Rohatgi, and S. Asher, “Development of Screen-Printed Silicon Solar Cells with High Fill Factors on 100 (/sq Emitters,” IEEE Transactions on Electron Devices, vol. 51, no.6, pp. 948-955, June 2004.

167.I. Tarasov, S. Ostapenko, K. Nakayashiki and A. Rohatgi, “Defect Passivation in Multicrystalline Silicon for Solar Cells,” Applied Physics Letters, vol. 85, no 19, pp. 4346-4348, November, 2004.

168. K. Nakayashiki, A. Rohatgi, S. Ostapenko and I. Tarasov, “Minority Carrier Lifetime Enhancement in Edge-Defined Film-Fed Grown Si through Rapid Thermal Processing-Assisted Reduction of Hydrogen-Defect Dissociation,” Journal of Applied Physics, vol 97, no. 02, pp. 1-8, January, 2005.

169.A. Upadhyaya, M. Sheoran and A. Rohatgi “High-Efficiency Screen-Printed Belt Co-Fired Solar Cells on Cast Multicrystalline Silicon” Applied Physics Letters, vol. 86, pp.1-5, January, 2005.

170.D.S. Kim, V. Yelundur, K. Nakayashiki, B. Rounsaville, V. Meemongkolkiat, A. M. Gabor and A. Rohatgi, “Ribbon Si Solar Cells with Efficiencies over 18% by Hydrogenation of Defects” Solar Energy and Solar Cells, vol. 90, pp 1227-1240, 2006.

171.K. Nakayashiki, V. Meemongkolkiat and A. Rohatgi, “Effect of Material Inhomogeneity on the Open-Circuit Voltage of String Ribbon Si Solar Cells,” IEEE Transactions on Electron Devices, vol.52, no. 10, pp. 2243-2249, October, 2005.

172.V. Meemongkolkiat, K. Nakayashiki, A. Rohatgi, G. Crabtree, J. Nickerson and T.L. Lester, “Resistivity and Lifetime Variation along Commercially Grown Ga- and B-Doped Czochralski Si Ingots and Its Effect on Light-Induced Degradation and Performance of Solar Cells”, Progress in Photovoltaics, vol. 14, pp. 125-134, March, 2006.

173. M. Hilali, K. Nakayashiki, C. Khadilkar, R. Reedy, B.To, A. Rohatgi, A. Shaikh and S. Kim, “The Effect of Ag Particle Size in Thick-Film Ag Paste on the Electrical and Physical Properties of Screen-Printed Contacts and Silicon Solar Cells”, Journal of Electrochemical Society, vol. 153, no. 1, pp A5-A11, 2006.

174.M. Hilali, M. M. Al-Jassim, B. To, H. Moutinho, A. Rohatgi and S. Asher, “Understanding the Formation and Temperature Dependence of Thick-Film Ag Contacts on High Sheet-Resistance Si Emitters for Solar Cells, Journal of the Electrochemical Society, vol. 153, no. 10, pp. G742-G749, April, 2005.

175.V. Meemongkolkiat, K. Nakayashiki, D.S. Kim, R. Kipecek and A. Rohatgi, “Factors Limiting the Formation of Uniform and Thick Al-Back Surface Field and Its Potential,” Journal of Electrochemical Society, vol. 153., no 1, pp. G53-G58, 2006.

176.M. Hilali, K. Nakayashiki and A. Rohatgi, “High Efficiency (19%) Screen-Printed Textured Cells on Low-Resistivity Float-Zone Silicon with High Sheet-Resistance Emitters,” Progress in Photovoltaics, vol. 14, no. 2, p. 135-144, October, 2005.

177.D.S. Kim, M.M. Hilali, A. Rohatgi, K. Nakano, A. Hariharan and K. Matthei, “Development of a Novel Phosphorus Spray Diffusion System for Low Cost Silicon Solar Cells,” Journal of Electrochemical Society, vol. 153, pp A1391-A1396, 2006.

178.A. Rohatgi, A. Upadhyaya and M. Sheoran, “High-Efficiency Screen-Printed Belt Co-Fired Solar Cells on Cast Multicrystalline Silicon,” Applied Physics Letters, vol. 86, no. 5, pp. 54103, 1-3, 2005.

179.D.S. Kim, A.M. Gabor and A. Rohatgi, “String Ribbon Silicon Solar Cells with 17.8% Efficienciey”, Journal of the Korean Physical Society, vol. 47, no.1, pp 157-162, 2005.

180.K. Nakayashiki, B. Rounsaville, V. Yelundur, D.S. Kim, A. Rohatgi, R. Clark-Phelps, and J.I. Hanoka, “Fabrication and Analysis of High-Efficiency String Ribbon Si Solar Cells, Solid State Electronics, vol. 50, pp 1406-1412, 2006.

181. A. Pregelj, M. Begović, and A. Rohatgi, “Recloser allocation for improved reliability of DG-enhanced distribution networks,” IEEE Transactions on Power Systems, vol. 21, pp. 1442-1449, 2006.

182.M. Sheoran, A. Upadhyaya, and A. Rohatgi, “A comparison of bulk lifetime, efficiency and light-induced degradation in boron and gallium doped cast multicrystalline silicon solar cells,” IEEE Transactions on Electron Devices, vol. 53, pp. 2764-2772, 2006.

183.S. Kleekajai, F. Jiang, M. Stavola, V. Yelundur, K. Nakayashiki, A. Rohatgi, S. Seren, G. Hahn, and J. Kalejs, “Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells,” Journal of Applied Physics, vol. 100, pp. 093517/1-7, 2006.

184.M.M. Hilali, S. Sridharan, C. Khadilkar, A. Shaikh, A. Rohatgi, and S. Kim, “The effect of glass frit chemistry on the physical and electrical properties of thick-film Ag contacts for silicon solar cells,” Journal of Electronic Materials, vol. 35, pp. 2041-2047, 2006.

PUBLISHED JOURNAL PAPERS (Non‑refereed)

1.A. Rohatgi, S. R. Butler, and F. J. Feigl, "Sodium Neutralization Characteristics of HCl Oxides in MOS Structures", (abstract 77-1), Journal of the Electrochemical Society, vol. 78, pg. 219, 1977.

2.S. R. Butler, F. J. Feigl, A. Rohatgi, H. W. Kraner, and K. W. Jones, "CL Incorporation in SiO2 Prepared by Oxidation of Si in O2‑HCl Ambients", (abstract 77-1), Journal of the Electrochemical Society, 77‑1, vol. 77, pg. 217, 1977.

3.L. H. Slack, A. F. Carroll, and A. Rohatgi, "Conduction in Heat Treated Tin Oxide Films", (abstract 19E-77F), Journal of American Ceramic Society Bulletin, vol. 56, No 8, pg. 125, 1977.

4.J. Mankowski, R. E. Tressler, J. Stack, A. Rohatgi, D. B. Williams, and S. R. Butler, "Inhomogeneous Chlorine Distributions in Silicon Oxides Grown in HCl‑O2 Mixtures", (abstract 78-2), Journal of the Electrochemical Society, vol. 211, pg. 566, 1978.

5.A. Rohatgi and P. Rai‑Choudhury, "Carrier Lifetime Enhancement in Silicon", (abstract 79-1), Journal of the Electrochemical Society, vol. 207, pg. 540, 1979.

6.R. B. Campbell and A. Rohatgi, "Evaluation of Cost‑Effective Contact Systems for Solar Cells", (abstract 79-1), Journal of the Electrochemical Society, vol. 196, pg. 515, 1979.

7.J. R. Davis, R. H. Hopkins, P. Rai‑Choudhury, P. D. Blais, A. Rohatgi, J. R. McCormick, and H. C. Mollenkopf, "Impurity Effects in Silicon Solar Cells", (abstract 79-1), Journal of the Electrochemical Society, vol. 65, pg. 174, 1979.

8.J. R. Davis, R. H. Hopkins, A. Rohatgi, P. D. Blais, P. Rai‑Choudhury, R. B. Campbell, J. R. McCormick, and H. C. Mollenkopf, "Impurities in Silicon", (abstract 80-1), Journal of the Electrochemical Society, vol. 301, pg. 757, 1980.

9.A. Rohatgi, M. R. Chin, P. Rai‑Choudhury, S. Fonash, R. Singh, and P. A. Lester, "Effect of Process Parameters on Si Surface Damage Induced by CCl4 Reactive Ion Etching", (abstract 83-2), Journal of the Electrochemical Society, vol. 320, 1983.

10.A. Rohatgi, J. P. Schaffer, S. K. Pang, T. K. Gupta, and W. D. Straub, "Defect Characterization of Thermally Treated ZnO Varistor", (abstract 1820 RNP), Journal of the Electrochemical Society, October 1987.

PAPERS IN CONFERENCE PROCEEDINGS (Refereed)

1.J.R. Davis, A. Rohatgi, P. Rai‑Choudhury, P. D. Blais, R. H. Hopkins, and J.R. McCormick, "Characterization of the Effects of Metallic Impurities on Silicon Solar Cell Performance", Proceedings of the 13th IEEE Photovoltaic Specialists Conference, Washington D.C, pp. 490‑495, 1978.

2.R. G. Seidensticker, R. E. Kothmann, J. P. McHugh, C. S. Duncan, R. H. Hopkins, P. D. Blais, J. R. Davis, and A. Rohatgi, "Computer Modeling of Dendritic Web Growth Process and Characterization of the Material", Proceedings of the 13th IEEE Photovoltaic Specialists Conference, Washington D.C, pp. 358‑362, 1978.

3.J. Davis and A. Rohatgi, "Theoretical Design Considerations for Back Surface Field Solar Cells", Proceedings of the 14th IEEE Photovoltaic Specialists Conference, San Diego, California, pp. 569‑572, January 1980.

4.R. B. Campbell, A. Rohatgi, E. J. Seman, J. R. Davis, P. Rai‑Choudhury, and B. D. Gallagher, "Solar Cells and Modules from Dendritic Web Silicon", Proceedings of the 14th IEEE Photovoltaic Specialists Conferences, San Diego, California, pp. 332‑336, January 1980.

5.A. Rohatgi, R. B. Campbell, J. R. Davis, R. H. Hopkins, P. Rai‑Choudhury, and J. R. McCormick, "POCl Gettering of Titanium, Molybdenum, and Iron Contaminated Silicon Solar Cells", Proceedings of the 14th IEEE Photovoltaic Specialists Conference, San Diego, California, pp. 908‑911, January 1980.

6.A. Rohatgi, "Radiation Tolerance of Boron Doped Dendritic Web Silicon Ribbon", Proceedings of the Fourth Solar Cell High Efficiency and Radiation Damage Conference, NASA Lewis Research Center, Cleveland, Ohio, pp. 281‑284, 1980.

7.A. Rohatgi, J. R. Davis, P. Rai‑Choudhury, R. G. Seidensticker, and R. B. Campbell, "High Efficiency and Radiation Hard Solar Cells from Dendritic Web Silicon Ribbon", Proceedings of the Symposium on Materials and New Processing Technologies for Photovoltaics, J. A. Amick et al. (eds.), Electrochemical Society, vol. 81‑3, pp. 108‑118, 1981.

8.M. H. Hanes, R. H. Hopkins, A. Rohatgi, P. Rai‑Choudhury, R. B. Campbell, and M. H. Mollenkopf, "The Thermal Stability of Impurities in Silicon Solar Cells", Proceedings of the 15th IEEE Photovoltaic Specialists Conference, Orlando, Florida, pp. 530‑533, June 1981.

9.R. H. Hopkins, J. R. Davis, and A. Rohatgi, "Silicon Purity: Impact on Crystal Growth and Silicon Properties", Proceedings of the Silicon Materials Preparation Workshop JPL, Tempe, Arizona, 1982.

10.J. R. Davis, R. H. Hopkins, and A. Rohatgi, "Definitions of Solar Grade Silicon", Proceedings of the Third Symposium on Materials and New Processing Technologies for Photovoltaics, J. P. Dismukes et al. (eds.), Electrochemical Society, vol. 82‑8, pp. 14‑25, 1982.

11.H. M. Hobgood, L. B. Ta, A. Rohatgi, and R. N. Thomas, "Residual Impurities and Defect Levels in Semi‑Insulating GaAs Grown by Liquid Encapsulated Czochralski", Second Proceedings of the Semi‑Insulating III‑V Materials, S. Makram‑Ebeid and B. Tuck (eds.), Shiva Publishing Ltd., Cheshire, England, pp. 28‑35, 1982.

12.A. Rohatgi, J. R. Davis, R. H. Hopkins, and P. Rai‑Choudhury, "Impurities in Polysilicon Solar Cells", Proceedings of the 16th IEEE Photovoltaic Specialists Conference, San Diego, California, pp. 411‑416, 1982.

13.R. Singh, S. J. Fonash, A. Rohatgi, and P. Rai‑Choudhury, "Low Energy Hydrogen Implantation Passivation for Web Silicon", Proceedings of the European Photovoltaics Conference, Athens, Greece, October 1983.

14.A. Rohatgi and P. Rai‑Choudhury, "Surface Passivated High Efficiency Solar Cells, Proceedings of the 17th IEEE Photovoltaic Specialists Conference, Orlando, Florida, pp. 409‑414, 1984.

15.E. F. Federmann and A. Rohatgi, "The Decisive Impact of Cell Efficiency on the Implementation of Photovoltaic Systems, Proceedings of the 17th IEEE Photovoltaic Specialists Conference, Orlando, Florida, pp. 520-526, 1984.

16.D. L. Meier, R. B. Campbell, A. Rohatgi, P. Alexander, S. J. Fonash, and R. Singh, "Emitter Formation in Dendritic Web Silicon Solar Cells", Proceedings of the 17th IEEE Photovoltaic Specialists Conference, Orlando, Florida, pp. 427-433, 1984.

17.R. C. Clarke, M. C. Driver, and A. Rohatgi, "Reactive Ion Etching of 3‑D Structures in GaAs", Proceedings of the Gomac Conference, Las Vegas, Nevada, pp. 340-344, November 1984.

18.A. Rohatgi, P. Rai‑Choudhury, T. W. O’Keefe, and B. E. Yoldas, "High Efficiency Solar Cells in Float Zone and Dendritic Web Silicon Ribbon", Proceedings of the Symposium on Materials and New Processing Technologies for Photovoltaics, J. P. Dismukes et al. (eds.), Electrochemical Society, vol. 85‑9, pp. 252‑260, 1985.

19.A. Rohatgi, "Process and Design Considerations for High Efficiency Solar Cells", Proceedings of the Flat‑Plate Solar Array Project Research Forum on High Efficiency Crystalline Silicon Solar Cells, JPL Publication 85‑38, pp. 429‑442, May 1985.

20.A. Rohatgi, S. Gupta, P. G. McMullin, P. A. Palaschak, P. Rai‑Choudhury, and B. D. Gallagher, "Laser Written Metallization Patterns for Low‑Cost High‑Efficiency Solar Cells", Proceedings of the 18th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 782‑786, October 1985.

21.D. L. Meier, J. Greggi, A. Rohatgi, T. W. O'Keefe, P. Rai‑Choudhury, R. B. Campbell, and S. Mahajan, "Twin Plane Effects in Dendritic Web Silicon", Proceedings of the 18th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 596‑603, October 1985.

22.. Rohatgi, D. L. Meier, T. W. O'Keefe, and P. Rai‑Choudhury, "High Efficiency Solar Cells on Low‑Resistivity Dendritic Web Silicon Ribbon", Proceedings of the 18th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 50‑54, October 1985.

23.A. Rohatgi, "A Review of High‑Efficiency Silicon Solar Cells", Proceedings of the 18th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 7‑13, October 1985.

24.R. B. Campbell, E. Dombrowski, J. R. Easoz, E. L. Kochka, C. S. Duncan, R. H. Hopkins, D. L. Meier, J. P. McHugh, A. Rohatgi, P. Rai‑Choudhury, and R. G. Seidensticker, "Status of Solar Cells and Modules Fabricated from Dendritic Web Silicon", Proceedings of the 18th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 465‑469, October 1985.

25.T. F. Ciszek, T. Wang, and A. Rohatgi, "Some Effects of Crystal Growth Parameters on Minority Carrier Lifetime in Float‑Zoned Silicon", Proceedings of the Symposium on Materials and New Processing Technologies for Photovoltaics, Electrochemical Society, vol. 87‑10, pp. 230-234, 1987.

26.S. K. Pang, J. Schaffer, and A. Rohatgi, "Effect of Oxygen on Lifetime and Defects in Magnetic Czochralski Silicon, Proceedings of the 19th IEEE Photovoltaic Specialists Conference, New Orleans, Louisiana, pp. 1500‑1501, May 1987.

27.S. K. Pang, A. Rohatgi, and T. F. Ciszek, "Doping Dependence of Minority Carrier Lifetime in Silicon Ga-Doped", Proceedings of the 20th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 435‑440, Sept. 1988.

28.A. W. Smith and A. Rohatgi, "Modeling the Effect of Trap Level on Optimum Resistivity for High Efficiency Cells", Proceedings of the 20th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 729‑734, Sept. 1988.

29.G. Augustine, A. W. Smith, A. Rohatgi, and C. J. Keaveny, "Characterization and Modeling of InP Solar Cells", Proceedings of the 20th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 903‑907, Sept. 1988.

30.S. A. Ringel and A. Rohatgi, "Material Quality and Design Optimization for High Efficiency GaAs Solar Cells", Proceedings of the 20th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 666‑671, Sept. 1988.

31.A. Rohatgi, R. Sudharsanan, S. A. Ringel, M. V. Meyers, and C. H. Liu, "Wide Bandgap Thin Film Solar Cells from CdTe Alloys", Proceedings of the 20th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 1477‑1481, Sept. 1988.

32.S. Perkowitz, Z. C. Feng, A. Erbil, R. Sudharsanan, K. T. Pollard, and A. Rohatgi, "Raman and Photoluminescence Analysis of CdMnTe Thin Films", Proceedings of SPIE ‑Raman Scattering, Luminescence, and Spectroscopic Instrumentation in Technology, pp. 76‑84, 1989.

33.A. Rohatgi, J. P. Schaffer, and A. B. Dewald, "Defect Characterization in Semiconductors by Positron Annihilation Spectroscopy", Proceedings of the Symposium on Materials and New Processing Technologies for Photovoltaics, T. J. Shaffner and D. K. Schroder (eds.), Electrochemical Society, vol. 88‑20, pp. 168‑184, 1988.

34.A. Rohatgi, A. W. Smith, S. K. Pang, and P. A. Basore, "Impact of Deep Level Positron and Light Trapping on Silicon Cell Performance", Proceedings of the 4th International Photovoltaic Science and Engineering Conference, Sydney, Australia, February 1989.

35.A. Rohatgi, A. W. Smith, and S. A. Ringel, "Effects of Deep Levels, Injection Level, and Light Trapping on Design and Performance of High Efficiency Solar Cells,

Proceedings of the DOE/Sandia Crystalline Photovoltaic Technology Project Review Meeting, pp.70‑75, July 1989.

36.A. Rohatgi, C. J. Summers, A. Erbil, R. Sudharsanan, S. A. Ringel, P. V. Meyers, and C. H. Liu, "Current Status and Future Directions of Cd (Zn,Mn)Te/CdS Solar Cells", Proceedings of the Polycrystalline Thin Film Program Meeting, Denver, Colorado, pp. 45‑50, August 1989.

37.A. Rohatgi, W. A. Doolittle, and A. W. Smith, "Doping and Oxygen Dependence of Efficiency of EFG Solar Cells", Proceedings of the 21st IEEE Photovoltaic Specialists Conference, Orlando, Florida, pp. 561‑587, May 1990.

38.R. Sudharsanan and A. Rohatgi, "Effects of Pre‑Heat Treatment of CdS or MOCVD CdTe/CdS Solar Cell Performance", Proceedings of the 21st IEEE Photovoltaic Specialists Conference, Orlando, Florida, pp. 504‑508, May 1990.

39.A. W. Smith, A. Rohatgi, and S. C. Neel, "Texture: A Ray Tracing Program for the Photovoltaic Community", Proceedings of the 21st IEEE Photovoltaic Specialists Conference, Orlando, Florida, pp. 426‑431, May 1990.

40.W. A. Doolittle, A. Rohatgi, and R. Brenneman, "Correlation Between Impurities, Defects, and Cell Performance in Semicrystalline Silicon", Proceedings of the 21st IEEE Photovoltaic Specialists Conference, Orlando, Florida, pp. 681‑686, May 1990.

41.G. Augustine, A. Rohatgi, and N. Jokerst, "Optimization of Base Doping for Radiation Hard InP Solar Cells", Proceedings of the 3rd Indium Phosphide and Related Materials Conference Proceedings, Cardiff, Wales, U.K., pp. 60‑63, April 1991.

42.Z. Chen, A. Rohatgi, and P. Sana, "Effects of Illumination Level on Diffusion Length and Efficiency of Poly‑Si Cells", Proceedings of the 22nd IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 1051‑1056, October 1991.

43.B. L. Sopori, K. M. Jones, X. R. Matson, M. Al‑Jassim, S. Tsuo, W. A. Doolittle, and A. Rohatgi, "Hydrogen in Silicon: Diffusion and Defect Passivation", Proceedings of the 22nd IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp.833‑841, October 1991.

44.R. R. King, E. W. Thomas, W. B. Carter, and A. Rohatgi, "The Effect of Aluminum and Boron Solid‑Source Doping on Recombination in Silicon Solar Cells", Proceedings of the 22nd IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 229‑234, October 1991.

45.A. Rohatgi, S. A. Ringel, R. Sudharsanan, and H. C. Chou, "An Improved Understanding of Efficiency Limiting Defects in Polycrystalline CdTe/CdS Solar Cells", Proceedings of the 22nd IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, pp. 962‑966, October 1991.

46.A. Rohatgi and R. Sudharsanan, "MOCVD of Compound Semiconductors for Photovoltaics", Proceedings of the 6th International Photovoltaic Science and Engineering Conference, New Delhi, India, pp. 835‑842, February 1992.

47.G. Augustine, N.M. Jokerst, and A. Rohatgi, "Absorption Measurements of Doped Thin Film InP for Solar Cell Modeling", Proceedings of the 4th International Conference on Indium Phosphide Related Materials, New Port, Rhode Island, pp. 557‑560, April 1992.

48.A. Rohatgi, P. Sana, and J. Salami, "Record High Efficiency Solar Cells on Cast Polycrystalline Silicon", 11th European Photovoltaic Solar Energy Conference, Montreaux, Switzerland, pp. 159‑163, October 1992.

49.G. Augustine, B.M. Keyes, N.M. Jokerst, A. Rohatgi, and R.K. Ahrenkiel, "Time‑Resolved Photoluminescence Studies on Transferred Thin Film InP Epilayers", to be published in Proceedings of the 5th International Conference on Indium Phosphide Related Materials, pp. 636-639, Paris, France, April 1993.

50.P. Sana, A. Rohatgi, J.P. Kalejs, and R.O. Bell, "The Effect of Aluminum Treatment and Forming Gas Anneal on EFG Silicon Solar Cells," Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY, pp. 111‑116, May 1993.

51.H.C. Chou, A. Rohatgi, A.K. Bhat, S. Kamra, R.R. Arya, and R.K. Ahrenkiel, "The Effects of CdTe Mole Ratio in the MOCVD Growth Ambient on CdTe Solar Cells," Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY, pp. 481‑485, May 1993.

52.A. Rohatgi, P. Sana, M.S. Ramanachalam, and W. B. Carter, "Investigation of the Effects of Aluminum Treatment on Silicon Solar Cells," Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY, pp. 52‑57, May 1993.

53.A. Rohatgi, Z. Chen, G. Crotty, and J. Salami, "Gettering and Passivation of High Efficiency Multicrystalline Silicon Solar Cells," Technical Digest of the 7th International Photovoltaic Science and Engineering Conference, Nagoya, Japan,

pp. 93-97, November 1993.

54.K. Yasutake, H. Kakiuchi, K. Yoshi, H. Kawabe, Z. Chen, S.K. Pang, and A. Rohatgi, "Surface Recombination Velocity and Interface State Parameters at Si-Si02 Interface Prepared