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Scheme of Examination for M.Tech.(Regular & weekend) Programme has been approved by BoS of USICT on dated 28/05/2012 and AC subcommittee on dated 6 th July, 2012 and 5 th November,2012. This scheme is effective from academic session 2012-13. Basic principle of MOS transistor, Introduction t o large signal MOS models (long channel) for digital design. scaling, MOS SPICE model and simulation, CMOS layout: design rules, Transistor layout, Inverter layout, NMOS and CMOS basic manufacturing steps. Inverter principle, the basic CMOS inverter, transfer characteristics, logic threshold, Noise margins, switching characteristics, Propagation Delay, Power Consumption. Static latches, Flip flops & Registers, Dynamic Latches & Registers, CMOS Schmitt trigger, Astable Circuits. Memory Design: ROM & RAM cells design Dynamic logic families and performances. Clock Distribution. Input and Output Interface circuits. Design styles, design concepts: Hierarchy, Regularity, Modularity, Locality. CMOS Sub system design: Ad de rs , Multipliers. [1] S. Kang & Y. Leblebici “CMOS Digital IC Circuit Analysis & Design” - McGraw Hill, 2003. [2] J. Rabaey, “Digital Integrated Circuits Design”, Pearson Education, Second Edition, 2003. [1] Neil Weste and David Harris :“ CMOS VLSI design” Pearson Education 2009. Page 120 Sta tic MOS des ign, Ratioed logic, Pass Transistor logic,complex logic circuits . Pape r Code: MEEC-606 L T C Paper: Advanced VLSI Design 4 - 4 INSTRUCTIONS TO PAPER SETTERS: Maximum Marks : 60 1. Question No. 1 should be compulsory and cover the entire syllabus. This question should have objective or short answer type questions. It should be of 20 marks. 2. Apart from Question No. 1, rest of the paper shall consist of four units as per the syllabus. Every unit should have two questions. However, student may be asked to attempt only 1 question from each unit. Each question should be 10 marks Unit 1 Introduction : MOS Circuit Layout & Simulation and manufacturing : Unit 2 The MOS Inverter : Unit 3 Dynamic MOS design : Clock Distribution Unit 4 Subsystem design Re fe re nce Books Combinational MOS Logic Design : Sequential MOS Logic Design Text Books

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  • Scheme of Examination for M.Tech.(Regular & weekend) P rogramme has been approved by BoS of USICT on dated

    28/05/2012 and AC subcommittee on dated 6th July, 2012 and 5th November,2012. This scheme is effective from academicsession 2012-13.

    Basic principle of MOS transistor, Introduction to large signal MOS models (long channel) for

    digital design.

    scaling, MOS SPICE model and simulation, CMOS

    layout: design rules, Transistor layout, Inverter layout, NMOS and CMOS basic manufacturing steps.

    Inverter principle, the basic CMOS inverter, transfer characteristics, logic threshold, Noise

    margins, switching characteristics, Propagation Delay, Power Consumption.

    Static latches, Flip flops & Registers, Dynamic Latches & Registers, CMOS Schmitt trigger, Astable Circuits.

    Memory Design: ROM & RAM cells design Dynamic logic families and

    performances.

    Clock Distribution. Input and Output Interface circuits.

    Design styles, design concepts: Hierarchy, Regularity, Modularity, Locality. CMOS Sub system design:Adders , Multipliers.

    [1] S.Kang & Y. Leblebici CMOS Digital IC Circuit Analysis & Design-McGraw Hill, 2003.

    [2] J. Rabaey, Digital Integrated Circuits Design, Pearson Education, Second Edition, 2003.

    [1] Neil Weste and David Harris : CMOS VLSI design Pearson Education 2009.

    Page 120

    Static MOS des ign,Ratioed logic, Pass Transistor logic, complex logic

    circuits.

    Paper Code: MEEC-606 L T C

    Paper: Advanced VLSI Design 4 - 4

    INSTRUCTIONS TO PAPER SETTERS: MaximumMarks : 60

    1. Question No. 1 should be compulsory and cover the entire syllabus. This question should have

    objective or short answer type questions. It should be of 20 marks.

    2. Apart from Question No. 1, rest of the paper shall consist of four units as per the syllabus. Every

    unit should have two questions. However, student may be asked to attempt only 1 question from

    each unit. Each question should be 10 marks

    Unit 1

    Introduction :

    MOS Circuit Layout & Simulation and manufacturing:

    Unit 2

    The MOS Inverte r :

    Unit 3

    Dynamic MOS design :

    Clock Distribution

    Unit 4

    Subsystem design

    Refe rence Books

    Combinational MOS Logic Design :

    SequentialMOS Logic Design

    Text Books