Advances in Thermal InterfaceMaterials

Using Nanotechnology...

Indium as Thermal InterfaceMaterial...

Mechanical Stresses...

Lowest ESR at High Voltage...

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W W W. I M A P S . O R G

MATERIALS

THERMAL

JULY/AUGUST 2006

Accu-Tech Laser Processing, Inc.AdTech CeramicsAdvanced Applied AdhesivesAdvanced Chemical Co.Advanced Cooling TechnologiesAdvanced PackagingAI Technology, Inc.Alcatel Vacuum SystemsALLVIAAlphasem AGAmerican Technical CeramicsAMI/PrescoAnaren Microwave, Inc.Anrich Microscreens, Inc.AsymtekATV Technology, Inc.Avure Autoclave Systems, Inc.Azimuth Electronics, Inc.Barry Industries, Inc.BI Technologies CorporationBrush Ceramic ProductsCAD Design SoftwareCentral Semiconductor Corp.Centrotherm TechnologiesCeramTec North America Corp.Chip Supply, Inc.Coining of America LLCCommonwealth MicrotechnologiesCooligy, Inc.CoorsTek, Inc.Crane Aerospace & ElectronicsCuramik Electronics, Inc.Dage Precision Industries, Inc.Dakota ConsultingDatacon North America, Inc.Deweyl Tool Company, Inc.DuPont Microcircuit MaterialsDyconex AGEFD, Inc.Emerson & CumingEpoxy Technology, Inc.EPP GmbHES Components, Inc.ESL Electro-ScienceEuro IndustriesF&K Delvotec, Inc.Ferro Electronic Material Systems

Finetech, Inc.First Level, Inc.Five Star Technologies, Inc.FRT of America, LLCGaiser Tool Co.Gannon & ScottGeib Refining CorporationGel-Pak/Quik-PakGPD GlobalGraphite Concepts, Inc.GSI Group Inc.H.C. StarckHaiku Tech, Inc.Harrop Industries, Inc.HCMHEI, Inc.Heraeus Thick Film DivisionHesse & Knipps, Inc.Hi-Rel LaboratoriesIC InterconnectInnov-X SystemsInterconnect Systems, Inc.KesterKyocera America, Inc.Kyzen Corp.Laser Tech, Inc.Laserage Technology Corp.Life Line Packaging, Inc.Micro Hybrid Dimensions, Inc.MicroConnex CorporationMicropac Industries, Inc.MicroScreen LLCMinco Technology Labs, Inc.Mini-Systems, Inc.Mitsui Chemicals America, Inc.Mundt & Associates, Inc.Murakami Co., Ltd.NAMICS Technologies, Inc.Natel Engineering Co., Inc.NETZSCH Instruments, Inc.Newport CorporationNorCom Systems, Inc.Noritake Co., Inc.NTK Technologies, Inc.NuSil TechnologyNxGen ElectronicsOasis Materials Corporation

Orthodyne ElectronicsPac Tech USAPalomar Technologies, Inc.Panasonic Factory Solutions CompanyPerfection Products Inc.Photonics Spectra Magazine/

Laurin PublishingPolese CompanyPolysciences, Inc.Reactive NanoTechnologiesReinhardt Microtech AGReldan Metals, Inc.REMEC Defense & SpaceRiv, Inc. - Thick Film ScreensSEFAR Printing Solutions, Inc.Semi Dice, Inc.Semiconductor Equipment Corp.Semiconductor InternationalSemiconductor Packaging MaterialsSikama International, Inc.Silicon Cert, Ltd.Solid State Equipment Corp.Sonix, Inc.Sonoscan, Inc.SST InternationalStellar Industries Corp.Stellar Microelectronics Inc.Stratedge CorporationSypris Test & Measurement, Inc.TDK Corporation of AmericaTechnic, Inc.Tecnisco Ltd.Teledyne Microelectronic TechnologiesThin Film Industries, Inc.Torrey Hills Technologies, LLCTrebor Instrument Corp.Tresky CorporationTwilight Technologies, Inc.Umicore AG & Co. KgUnitek Benchmark, Inc.Utz Technologies, Inc.Viox CorporationWest-Bond, Inc.Xradia, Inc.Zymet, Inc.

As of 6/19/06

IMAPS 2006 Exhibitors

There is still room for your company – just visit www.imaps2006.org or call 202-548-8717!

J U LY / A U G U S T

2006

Advances in ThermalInterface Materials

D. D. L. Chung

UsingNanotechnology to

Enhance ThermalMaterial Properties

Alan Rae

Indium as ThermalInterface Material forHigh Power Devices

Fay Hua, Carl Deppisch,Tom Fitzgerald

Mechanical Stressesin Mounted

ComponentsDr. Jerry E. Sergent

Lowest ESR at HighVoltage - MultianodeTantalum Capacitors

I. Horacek, L. Marek, J. Tomasko, T. Zednicek,

S. Zednicek

8Features

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16

18

On the Cover:TEM cross section of the

interface between the silicon wafer and the

fired-on silver contact of a polycrystalline solar cell.

Photo courtesy of Ferro Corporation

26

2

A D V A N C I N G

MICROELECTRONICS

D E PA R T M E N T S

3 Publications CommitteeIncreasing the Scope ofAdvancing Microelectronics

4 From the President

5 From the Editor

6 Guest Editorial

29 Scenes from HITEC

35 Around the Microcircuit

36 Chapter Contacts

37 From the VP of Membership

38 New IMAPS Members

39 IMAPS Member Renewals

40 Products & Services

44 Advertiser Hotline

44 Who to Call at IMAPS HQ

Inside Back Cover Calendar of Events

I M A P S 2 0 0 6

30 Sign Up for a PDC

A S I A NN E W S

31 ICEP, the Only InternationalJisso Conference Held inJapan

E U R O P E A NN E W S

7 European Editorial

32 European News

C O N T E N T S

IMAPS - InternationalMicroelectronics And

Packaging Society611 2nd Street, NE

Washington, DC 20002Tel: (202) 548-4001

Fax: (202) 548-6115E-mail:

IMAPS@imaps.orgSee us on IMAPS’s Home Page:

www.imaps.org

3

Executive CouncilPresident

James R. Drehle, Robert Lloyd & Associates

President-ElectMichael R. Ehlert, Barry Industries, Inc.

First Past PresidentBruce M. Romenesko, Johns Hopkins University/APL

Vice President of TechnologyAndrew Strandjord, FlipChip International

Vice President of MembershipMichael P. O’Neill, Heraeus – Thick Film Division

SecretaryLawrence J. Rexing, Heraeus Incorporated-Circuit Materials Division

TreasurerSteve Capp, Laserage Technology Corp.

North West Regional DirectorJohn Zhang, Finisar

South West Regional DirectorDavid C. Virissimo, SPM

Southeast Regional DirectorKinzy Jones, Jr., Motorola

North Central Regional DirectorAdam Schubring, Kyocera America, Inc.

Northeast Regional DirectorTom Green, National Training Center for Microelectronics

Publications CommitteePublications Committee Chair

Jeffrey C. Demmin, Tessera Technologies, Inc.

Editor-in-Chief, Advancing MicroelectronicsJerry Sergent, Fairfield University

Editor - The Americas, Advancing Microelectronics

Greg Caswell, Virtex Assembly, Inc.

Editor - Europe, Advancing MicroelectronicsSøren Nørlyng, Micronsult

Editor - Asia, Advancing MicroelectronicsDr. Hironori Asai, Toshiba Corporation

Editor, Journal of Microelectronics and Electronic Packaging

Delip “Doug” Bokil, NAMARK Associates

DirectorsExecutive Director

Michael O’Donoghue

Director, Program Development & TechnologyBrian Schieman

Managing Editor and Advertising SalesAnn Carter Bell, Manager Marketing & Communications

Advancing Microelectronics (formerly Inside ISHM), ispublished six times a year and is a benefit of IMAPSmembership. The annual subscription price is $75; $15for a single copy. Copyright 2006 by IMAPS—International Microelectronics And Packaging Society.All rights reserved. Except as defined in 17 USC, Sec.107, permision to republish any materials in this publi-cation must be obtained from IMAPS, 611 2nd Street,NE, Washington, DC 20002. Telephone (202) 548-4001.

IMAPS 2006 - 39th International Symposium on MicroelectronicsOctober 8-12, 2006 San Diego, CA *Exhibitors contact abell@imaps.org

U P C O M I N G E V E N T S

The dissemination of information has undergone aradical transformation in the last decade. The Internetis clearly the driver of that, and there are two aspects ofthis that have affected IMAPS most directly. Most obvi-ously, our planet is a smaller place now, with muchgreater global communication. Similarly, the many lay-ers of the global supply chain have become more inte-grated because of faster and easier communication. ForIMAPS, this has translated into: 1) a more global scopeand 2) broader coverage of related industries. Both ofthese transformations are reflected in updates toAdvancing Microelectronics.

To address global issues better, we are fortunate thatDr. Hironori Asai of Toshiba has graciously agreed tojoin the staff as Asian Editor of AdvancingMicroelectronics. We look forward to excellent contri-butions from Asian sources with Dr. Asai’s assistance.We also still have Soren Norlyng as our European edi-tor. On the domestic front, Jerry Caswell is our NorthAmerican editor, and editor-in-chief Jerry Sergent over-sees all of the contributions with this greater globalscope.

You have probably noticed the recent IMAPSemphasis on the four tiers of the electronics world,

which we have defined as industry / OEMS, systems /applications, design, and materials / processes. Tohighlight this broader scope, we are cultivating sourcesand increasing the coverage in areas beyond the tradi-tional range of IMAPS. So, you should see articles fromthroughout the supply chain corresponding to the topicof each issue.

We have also made some changes to AdvancingMicroelectronics that are more cosmetic – but with somepurpose behind them. The first that you should noticeis the cover. We have sharpened some aesthetic details,but we also added more information about what’s insidethat issue, which should make the content more acces-sible. The inside of the magazine has also beentweaked some to make it easier to find what you need.

All of the changes are being phased in over the spanof a few issues, and the final product will be rolled outin the November/December 2006 issue. Please let usknow what you think – good, bad, or ugly. AdvancingMicroelectronics is still a publication for the members.So, more than any other periodical out there, it shouldbe what you want it to be.

Thanks for reading, �

Increasing the Scope ofAdvancing MicroelectronicsJeff Demmin, IMAPS Publications Committee Chair

P U B L I C A T I O N S C O M M I T T E E

Thermal ManagementSeptember 10-13, 2006 Palo Alto, CA *Student Competition

Power LEDsSeptember 13-15, 2006 Palo Alto, CA

International Conference on Alternative EnergyJanuary 16-18, 2007 Albuquerque, NM

2nd ATW on Reliability of Advanced Electronic Packages and Devices in Extreme Cold EnvironmentsFebruary 27-March 1, 2007 Arcadia, CA

ATW on Automotive PackagingApril 9-12, 2007 Dearborn, MI

Ceramic Interconnect and Ceramic Microsystems Technologies (CICMT 2007)April 23-26, 2007 Denver, CO

F R O M T H E P R E S I D E N T

4

A D V A N C I N G

MICROELECTRONICS

IMAPS as a society is changing to better meet theneeds of our current members, provide “opportunities”for new Microelectronics and Packaging professionalsand attract more companies within theMicroelectronics industry. The Microelectronics indus-try has grown over the last three to five years after a sig-nificant decline in 2000 and 2001. New and increasinginvestments in microelectronics and microelectronicpackaging are continuing on a global scale. The growthof microelectronic materials in traditional areas ofNorth America, Japan and Europe will be below growthin other areas of the world. MicroelectronicManufacturing will continue to move to the low costareas of the world. Process Evolution efforts will con-tinue to grow in the new manufacturing areas. Themajority of Revolutionary Process Development willcontinue to be concentrated in North America, Japanand Europe. The needs of our members in each regionwill continue to change to reflect Microelectronicsindustry development movements on a global scale.

IMAPS is in a unique position to help both the cus-tomer and suppliers by providing forums for theexchange of industry, application area, design area andprocess area requirements and capabilities. The growthof the Microelectronics and Microelectronics Packagingindustries will be driven worldwide by individual andcorporate members of IMAPS. IMAPS industry partnersrepresent the microelectronics industry from end-prod-uct suppliers to basic material suppliers. The technicaldisciplines necessary to make products of the future areality are within the grasps of IMAPS individual mem-bers and member companies. Future leaders will con-tinue to come from IMAPS student and educationalrelationships around the world. IMAPS connections arein place and the opportunity to lead and grow are with-in our grasp. This will involve regional as well as glob-al cooperation to succeed. IMAPS is changing – focus-ing on the needs of our individual members, corporatemembers and the microelectronic industry in the threemajor regions around the world. The needs in eachregion are not the same but the purpose and mission ofIMAPS remains the same.

The Purpose and Objective of the Society is:To advance and expand the technologies for all lev-

els of electronic and microelectronic packaging throughprofessional and public education, the dissemination ofinformation, and the promotion of the Society’s portfo-lio of technologies.

The success of IMAPS will be achieved by the dis-semination of information through regionally tailoredAdvanced Technology Workshops, Technical

Workshops, and the three major regional Conferences(EMPC – Europe, ICEP – Japan, and ICM – US). TheInternational Conference on Microelectronics (US con-ference) will continue to offer invited sessions from allregions. The Microelectronics technical knowledgebeing developed worldwide will be needed by IMAPSmembers. Advancing Microelectronics magazine isexpanding to better represent the Microelectronicsindustry. Topical issues with content from all threemajor world regions will give IMAPS members a viewof developments from each region. The Journal ofMicroelectronics and Electronic Packaging is publishingleading developments reviewed by editors from aroundthe world. The Society’s regional relationship withEducation facilities, Professional DevelopmentCourses, and student chapters is strong and gettingstronger.

The future of IMAPS will only be assured by focus-ing on the new and emerging technologies. Identifyingthe contribution emerging technologies will have onMicroelectronics and Microelectronics Packaging oftoday is key to a strong and growing IMAPS in thefuture. Nanotechnology has been developing over thelast few years and IMAPS is late in identifying the pos-sible contribution that nanotechnology will have onmicroelectronics. The Nanotechnology forMicroelectronics Conference in November will startthat process of identifying possible nanotechnologyareas. The next emerging technologies are currentlyunder development in industry, educational facilities,and industry labs around the world. IMAPS will pro-vide a new set of interactive forums called EmergingTechnology Workshops to identify these areas in thenext two years.

IMAPS is committed to strengthening our regionalprograms. IMAPS will deepen the society to better rep-resent the microelectronics industry, systems and appli-cations within each industry, design interactionsbetween industry groups, and communicate the grow-ing capability of material and process technologies.IMAPS will identify promising emerging technologiesthat will enable products of the future. Only by IMAPS’commitment to the future can we fulfill the IMAPSMission:

IMAPS will lead the Microelectronics Packaging,Interconnect and Assembly Community, providingmeans of communicating, educating, and interactingat all levels.

IMAPS looks forward to a bright and growingfuture. Join us. �

IMAPS - Recognizing theMicroelectronics Industry

James R. Drehle,Robert Lloyd & AssociatesIMAPS 2006 President

IMAPSwill leadthe MicroelectronicsPackaging, Interconnect and Assembly Community,providing means of commu-nicating, educating, andinteracting at all levels.

5

J U LY / A U G U S T

2006

Dr. Jerry SergentFairfield UniversityEditor

...proper selectionof attachment and packaging materials in terms of thermal conductivity and expansioncan vastly improve the thermal performance of a system without increasedcost and size.

These are the demands of the customer in today’sworld. (Of course, the packaging engineer would reply“Pick any two.”) However, to remain competitive, wehave to manage all three. The topics of this issue, mate-rials and thermal management, are very important inthis quest and are interrelated to a high degree.

As the speed of signal processing increases, devicesdissipate more heat. The excess heat is detrimental tothe reliability of the product and must be removed to apoint where it can be safely dissipated. Overdesign andunderdesign of the cooling system can both be cata-strophic. If the system is underdesigned, the conse-quences are obvious; the system will simply fail after aperiod of time. If the system is overdesigned, the costand size will be prohibitive in the marketplace.Therefore, to meet the overall requirements, the cool-ing system must be optimized to the product needs.

Materials play an important role in this process.The proper selection of attachment and packagingmaterials in terms of thermal conductivity and expan-sion can vastly improve the thermal performance of asystem without increased cost and size.

Our guest co-editor, Dr. Jennie S. Hwang, is one ofthe world’s leading experts in attachment materials andmethods. She has selected papers that provide consid-erable insight into this topic and which provide muchvaluable information.

In addition, we have contributions from ourEuropean editor, Dr. Soren Norlyng, and our AsianEditor, Dr. Hironori Asai, on the activities in theirregion.

So, go down to Starbucks (the one across the streetfrom the Starbucks), order yourself a cup of coffee, andsettle down for a very enjoyable and insightful read. �

Good, fast, cheap.

F R O M T H E E D I T O R

6

A D V A N C I N G

MICROELECTRONICS

G U E S T E D I T O R I A L

Materials

The global economy is going strong as reflected bythe U.S.’s GDP around 4%, Japan’s recovery nearly 2%,EU’s steady 1.5-2.0%, and China’s hovering around10%. Under this economic climate and the progressiveglobalization, all materials, commodity or advanced inmicro- or nano-scale, are becoming increasingly crucialto the sustainability and the continued health of theeconomy within each nation and across the nationalborders.

When re-visiting the scope and definition of a mate-rial, discussions and debates always rise. A simple def-inition, according to the Oxford English Dictionarydenotes that a material is the stuff from which an arti-cle, fabric or structure is made. While I was serving ona 12-member Committee on Globalization of MaterialsR&D commissioned by The National Academies andthe U.S. Department of Defense, the consensus was totake on a more thorough definition: “Matter is a mate-rial when that form of matter has structural, optical,magnetic or electrical use.” Further, being a relativelyyoung formal discipline comparing with chemistry,physics and traditional engineering fields, the MaterialsScience and Engineering, over the last five decades, hasmade immense advancements, contributing to the wellbeing of today’s world. A perfect definition is hard tocome by, yet any definition of the field must reflect therichness and diversity of all the activity related to mate-rials.

Regardless of which definition to be adopted,Materials Science and Engineering is an interdiscipli-nary field by its own right. And materials, indeed, arethe backbone of manufactured goods with usefulness toserve one or more designated functions, be it daily-useconsumer goods, heavy-duty equipment, space shuttleor solar cell (Cover photo, courtesy of FerroCorporation, depicts a polycrystalline solar cell’s inter-face between the silicon wafer and the fired-on silvercontact).

Going forward, the competitiveness across theindustries relies on the efficient use of materials, fur-ther development of better materials and the relentlessinnovation of new materials for unique or desired prop-erties and performance. The competitive edge stemsfrom the visionary anticipation and intimate under-standing of global trends and market drivers, in con-junction with the timely execution of broad-basedknowledge and information.

The various forms of information flow help theindustry sectors meet and exceed the challenge ofdesigning future materials through the interdisciplinaryapproach. Within the microelectronics sector, for thisspecial issue, I have invited three prominent profes-sionals from the material community, representing theuniversity, entrepreneurial business and corporation, toshowcase their innovative “masterpiece” on materials.The first paper, authored by Professor D.D.L. Chung ofUniversity of New York at Buffalo, highlights the com-parative performance of various thermal interface mate-rials. The second paper, by Dr. Alan Rae ofNanoDynamics, Inc., presents the superior propertiesimparted by using nanotechnology to enhance thermalmaterial. The third paper, by Dr. Fay Hua, CarlDeppisch and Tom Fitzgerald of Intel Corporation,describes Indium as thermal interface material for highpower devices. We thank all the authors for their con-tributions to this publication and to the materials com-munity. Enjoy the reading.

Dr. Jennie Hwang received her Ph.D. in Material Science andEngineering and two M.S. degrees in Liquid Crystal Science andChemistry, respectively. She has held senior executive positionswith Lockheed Martin Corp., SCM Corp., Sherwin Williams Co,and IEM Corp. Currently, she is a principal of H-TechnologiesGroup, providing business, technology and manufacturing solu-tions to the global industry. Among her many honors andawards, Dr. Hwang is elected to the National Academy ofEngineering; inducted to the WIT International Hall of Fame;named R&D-Star-to-Watch and the recipient of DistinguishedAlumni Awards from her alma maters. She has received the U. S.Congressional Certificate of Recognition and YWCA Women ofAchievement Award. She has 300 publications to her creditincluding several internationally-used textbooks. An inventor ofseveral patents, she has keynoted and lectured for many nationaland international events around the world and is a prolificauthor and speaker on workforce diversity, trade and businessissues. Dr. Hwang has served as a board director for Fortune 500NYSE, NASDAQ and private companies as well as on variouscivic and university boards. She has set an endowment fund ather alma maters, dedicated to interdisciplinary curricula andglobal exposures, and also established a YWCA Award recogniz-ing outstanding women students in science and engineering. �

Dr. Jennie HwangH-Technologies GroupCleveland, Ohio U.S.A.

...materials,indeed, are the backbone of manufacturedgoods with usefulness to serve one or more designatedfunctions, be it daily-use consumer goods, heavy-dutyequipment, space shuttle or solar cell.

E U R O P E A N E D I T O R I A L

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J U LY / A U G U S T

2006

Flexible electronics - flexible approaches

Flex-based electronics is one of the most intriguingand comprehensive range of technologies in the micro-electronics arena.

It is the solution to many high density packageswith very narrow pitches, very small through holesallowing embedded components like ultra thin ICs andthin film based passives.

It is the solution to RFIDs and smart cards includingflexible displays and batteries.

It is the solution to wearable electronics and ambi-ent intelligence with portable communication systemsnear the body, with smart textiles on the body and med-ical implants in the body. Now also a required solutionto biomedical applications with flexible and stretchablesubstrates for smart band-aids and body sensors.

It is the solution to electronic paper with printedelectronics.

Definitely a hot topic in Europe with several EU-funded programs and many players from the largestResearch Institutes, IMEC and Fraunhofer, large com-panies like Philips, Freudenberg Mektec to small andmedium sized companies in the supply chain.

The demand for flex substrates is exploding. Whereto buy, what to choose – which bandwagon to follow?

Critical questions.IMAPS has great challenges in organizing confer-

ences and workshops including these topics, so we allwill benefit. �

Søren Nørlyngnoerlyng@micronsult.dk

8

A

Overheating is the most critical problem in the com-puter industry, as it limits the further miniaturization,power, performance and reliability. An important wayto alleviate this problem is to improve the thermal con-tact between the microprocessor and heat sink in thecomputer [1-5]. For this purpose, a material, known asa thermal interface material [6], is placed at the inter-face. In the case of a microprocessor with an integrat-ed heat spreader, a thermal interface material is alsoneeded for the interface between the die and the heatspreader.

Thermal interface materials can be in the form of apaste (known as a thermal paste, most commonly basedon silicone) [7-13], flexible graphite [14-17], phasechange materials [18-20], low melting alloys [21,22]and nanostructured carbon materials [10-13, 23-26].A thermal paste should conform to the surface topog-raphy of the adjoining surfaces, because no surface isperfectly smooth and the valleys in the surface topog-raphy trap air, which is a thermal insulator.

Carbon black is a nanostructured carbon that is inthe form of porous agglomerates of nanoparticles (size30 nm [10-13]). Due to this structure, carbon black ishighly conformable. In addition, the nanoparticles incarbon black can fill the microscopic valleys in the sur-face topography of the mating surfaces. Thus, in spiteof the moderate thermal conductivity of carbon black,carbon black paste outperforms silver paste and solderas a thermal interface material [11].

The performance of a thermal interface material isenhanced by high conformability, high thermal con-ductivity and low thickness. For two mating surfacesthat are flat and well aligned (i.e., parallel), the thick-ness of the thermal interface material is ideally suchthat the interface material is just enough to fill the val-leys in the surface topography of the mating surfaces.However, the two surfaces may not be flat, i.e., theremay be some curvature in one or both surfaces.Moreover, the two surfaces may not be well aligned,due to the way that the two surfaces are brought togeth-er. The more different are the areas of the two surfaces,the greater is the chance of misalignment during fas-tening. In the case where the surfaces are not flat or notwell aligned, the gap between the surfaces can be sub-stantial, at least locally. As a result, the thermal inter-face material needs to be relatively thick and is referredto as a gap-filling material.

Due to its relatively large thickness, a gap-fillingmaterial is commonly in the form of a sheet. An exam-ple is “flexible graphite” [14-17], which is a graphite

sheet that is flexible and is resilient in the direction per-pendicular to the sheet. The resiliency is made possi-ble by the microstructure, which involves the mechan-ical interlocking of exfoliated graphite in the absence ofa binder [27]. In general, a gap-filling material in theform of a sheet may be made more effective by coatingboth sides of the sheet with a thermal paste. This paperaddresses gap-filling materials, in addition to thermalpastes.

Due to variability in the testing conditions (e.g.,roughness and thermal conductivity of the mating sur-faces) and methods (e.g., positions relative to the ther-mal interface of the temperature measurement), the rel-ative performance of various thermal interface materi-als should be evaluated by using the same testingmethod and condition. Although the performance ofvarious thermal interface materials has been reported,comparative evaluation has received little attention.Comparative evaluation is necessary for providingguidelines for the choice of a thermal interface materi-al. In addition, it sheds light on the science of thermalinterface materials.

Comparative evaluation [28] in this paper uses eachof two methods. One method involves application-ori-ented testing by using a computer and measuring thetemperature rise during computer operation. Anothermethod involves scientific testing by using the GuardedHot Plate Method, which involves measurement of theheat flux in the steady state (ASTM Method D5470)[13]. The latter method is more reliable scientifically,but the former method is commonly used in the elec-tronic industry. This paper also provides comparison ofthe relative performance results obtained by using thesetwo methods.

The application-oriented testing [28] used an IntelPentium IV flip chip pin-grid array 2 (FC-PGA2)microprocessor (processor core frequency 1.7 GHz,system bus frequency 400 MHz, L2 cache size 256Kbytes, core voltage 1.75 V) in a 478-pin package,which was integrated with a heat spreader (area = 960mm2) made of nickel coated copper with surfaceroughness 8 µm (Fig. 1). The pins, which were madeof Au/Ni plated Kovar, were inserted in a socket thatwas made of a fiber-reinforced polymer (resin). Thethermal interface material under evaluation was placedat the interface between the heat spreader (30 x 30 mm)and an aluminum heat sink (area of 88 x 64 mm andsurface roughness 12-21 µm).

The maximum temperature difference across theinterface between the microprocessor and heat sink

dvances in Thermal InterfaceMaterialsD.D.L. Chung, Composite Materials Research Laboratory, University at Buffalo, State University of New York, Buffalo, NY 14260-4400, USA. E-mail: ddlchung@buffalo.edu.

F E A T U R E A R T I C L E

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surfaces, as obtained by two thermocouples (Type T),was measured as a function of time from the start ofoperation of the microprocessor [28]. The micro-processor temperature increased with time, causing thetemperature difference between the two thermocouplesto change with time. The temperature difference at atime of 5 min was used for the comparative study. Thesmaller is the temperature difference, the less is thethermal resistance and the better is the performance.

In the Guarded Hot Plate Method, the thermal con-tact conductance was measured between two 1 x 1 in(25 x 25 mm) copper surfaces of roughness 15 ìm thatsandwiched a thermal interface material [28]. Thepressure in the direction perpendicular to the plane ofthe thermal interface was controlled at 0.46 MPa (50psi) by using a hydraulic press.

The thermal interface materials evaluated are listedin Table 1 [28], where FG denotes flexible graphite ofthickness 0.13 mm and Al denotes aluminum foil(1145) of thickness 0.007 mm. Also evaluated werematerials in the form of pastes, namely carbon black(1.25 vol.%) polyethylene-glycol (with 3 vol.% dis-solved ethyl cellulose) paste [10,11], commercial“Arctic Silver 5” (polyol ester filled with micronized sil-ver particles, together with smaller quantities of submi-cron particles of boron nitride, zinc oxide and alu-minum oxide, such that all the conductive fillers

together make up 88 wt.% of the paste, from ArcticSilver Inc., Visalia, CA) and commercial “Shin-Etsu X-23-7762” (aluminum particle filled silicone from Shin-Etsu MicroSi, Inc., Phoenix, AZ). Flexible graphite and

Fig. 1 Experimental set-up using a computer for application-oriented testing of various thermal interface materials [28]. T1 and T2 are thermocouples. All dimensions are in mm.

J U LY / A U G U S T

2006

continued page 10

10

aluminum foil that had been coated with each of thepastes on both sides were also included in the compar-ative study.

Table 1 shows the temperature difference obtainedby application-oriented evaluation using the computer[28]. The best materials are carbon black by itself,Shin-Etsu by itself and Al coated with Shin-Etsu; thesecond best materials are flexible graphite coated withcarbon black or Shin-Etsu and Al coated with carbonblack; the third best materials are Arctic Silver by itselfand aluminum coated with Arctic Silver. The superior-ity of carbon black and Shin-Etsu over Arctic Silver(each by itself) reflects the alignment and smoothness

of the mating surfaces and the consequent thin gap atthe interface. The thin gap favors an interface materialthat exhibits high conformability.

Table 1 also shows the thermal contact conductanceobtained using the Guarded Hot Plate Method [28]. Alow value of the temperature difference (based onapplication-oriented testing using the computer) corre-lates with a high value of the contact conductance inmost cases. The main discrepancy pertains to theresults for carbon black by itself and for Arctic Silver byitself. The temperature difference is lower for carbonblack by itself than for Arctic Silver by itself, but thecontact conductance is lower for carbon black by itselfthan for Arctic Silver by itself. This discrepancy isattributed to the greater smoothness of the micro-processor package than the copper surfaces used in thecontact conductance measurement. The carbon blackpaste is more fluidic than Arctic Silver, so it has greaterconformability, thus performing particularly well forsmoother surfaces [10]. The heat sink surface is rough,so conformability to the surface topography of the heatsink can be attained for both carbon black paste andArctic Silver. However, conformability to the micro-processor surface is attained to a greater degree by thecarbon black paste than Arctic Silver.

Fig. 2 shows the extent of correlation between theresults of application-oriented computer testing andthose of thermal contact conductance measurement. Ahigher conductance correlates with a lower value of thetemperature difference when the conductance is below3 x 104 W/m2.°C (i.e., the temperature difference isabove 4°C). When the conductance is higher, the tem-perature difference is essentially independent of theconductance. For example, thermal contact conduc-tance measurement shows that Shin-Etsu by itself ismore effective than carbon black by itself, but the val-ues of the temperature difference obtained by comput-

er testing are close for thesetwo cases (Table 1). Thisbehavior is due to the fact thatthe thermocouples used in thecomputer testing are separatedby not only the thermal inter-face material, but also themicroprocessor package, thesubstrate and the socket (Fig.1). The separation makes themeasured temperature differ-ence substantial, even thoughthe actual temperature differ-ence across the mating sur-faces may be small. Thus, thecomputer testing method isnot suitable for evaluatinghigh-performance thermalinterface materials. A trueassessment of the effectivenessof a thermal interface materialis the measurement of thethermal contact conductance.

In conclusion, comparativeevaluation of the relative effec-tiveness of various thermalinterface materials shows thatcarbon black paste, whether byitself or as a coating on alu-minum or flexible graphite, is

Fig. 2 Temperature difference in computer testing vs. thermal contact conductance inGuarded Hot Plate measurement [28].

continued from page 9

Thermal interface material Temperature difference (°C)Thermal contact conductance

(104 W/m2.°C)*

Carbon black 3.32 ± 0.16 4.85 ± 0.13

Arctic Silver 4.30 ± 0.39 6.31 ± 0.39

Shin-Etsu 3.07 ± 0.53 7.41 ± 0.47

FG 6.55 ± 0.43 1.40 ± 0.09

FG + carbon black 3.67 ± 0.27 2.93 ± 0.09

FG + Arctic Silver 6.01 ± 0.55 1.74 ± 0.15

FG + Shin-Etsu 4.04 ± 0.58 2.63 ± 0.18

Al 6.63 ± 0.48 1.32 ± 0.06

Al + carbon black 3.92 ± 0.24 3.67 ± 0.31

Al + Arctic Silver 5.06 ± 0.44 2.46 ± 0.18

Al + Shin-Etsu 3.27 ± 0.35 4.59 ± 0.48

Table 1 Temperature difference at 5 min of Pentium IV computer operation andthermal contact conductance for various thermal interface materials [28].

FG = flexible graphite, Al = aluminum.

* Measured using the Guarded Hot Plate Method, with the thermal interface material betweencopper surfaces squeezed together at a pressure of 0.46 MPa (50 psi).

A D V A N C I N G

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more effective than silver paste (Arctic Silver), but iscomparable in effectiveness to aluminum paste (Shin-Etsu). The carbon black paste by itself is as effective asthe Shin-Etsu paste coated aluminum. The high effec-tiveness of the carbon black paste is due to its con-formability. The Shin-Etsu paste is more effective thanArctic Silver, whether by itself or as a coating. The rel-ative performance is mostly consistent with thatassessed by measuring the thermal contact conduc-tance. The correlation is good for conductance below 3x 104 W/m2.°C. The discrepancy is attributed to thedifference in surface roughness between computer andGuarded Hot Plate surfaces.

References1. E.G. Wolff and D.A. Schneider, Int. J. Heat Mass Tran. 41, 3469

(1998).2. T. Ouellette and M. de Sorgo, Proc. Power Electron. Des. Conf. Power

Sources Users Conference, Cerritos, CA, 134 (1985).3. M.R. Vogel, Proc. Int. Intersociety Electron. Packag. Conf. - Advances

in Electronic Packaging (New York, NY: American Society ofMechanical Engineers, 1995), vol. 10-2, p. 989.

4. V. Sartre and M. Lallemand, Appl. Therm. Eng. 21, 221 (2001).5. M. Grujicic, C.L. Zhao and E.C. Dusel, Appl. Surf. Sci. 246, 290

(2005).6. D.D.L Chung, J. Mater. Eng. Performance 10, 56 (2001).7. L. Maguire, Microelectron. Reliab. 45, 711 (2004).8. M. Grujicic, Appl. Surf. Sci. 246, 290 (2005).9. Y. Xu, X. Luo and D.D.L. Chung, J. Electron. Packaging 124, 188

(2002).

10. C.-K. Leong and D.D.L. Chung, Carbon 42, 2323 (2004).11. C.-K. Leong and D.D.L. Chung, Carbon 41, 2459 (2003).12. C.-K. Leong, Y. Aoyagi and D.D.L. Chung, J. Electron. Mater. 34,

1336 (2005).13. C.-K. Leong and D.D.L. Chung, J. Electron. Mater. 35(1), 118

(2006).14. X. Luo, R. Chugh, B. C. Biller, Y. M. Hoi and D.D.L Chung, J.

Electron. Mater. 31(5), 535 (2002).15. M. Smalc, Int. Electron. Pack. T. Conf. Exhib. (New York, NY:

American Society of Mechanical Engineers, 2003), vol. 2, p. 253.16. I. Savija, Int. Electron. Pack. T. Conf. Exhib. (New York, NY:

American Society of Mechanical Engineers, 2003), vol. 2, p. 567.17. E. Marotta, IEEE T. Compon. Pack. T. 28, 102 (2005).18. Z. Liu and D.D.L. Chung, “Boron Nitride Particle Filled Paraffin

Wax as a Phase-Change Thermal Interface Material,” J. Electron.Packaging, in press.

19. Z. Liu and D.D.L. Chung, Thermochim. Acta 366(2), 135 (2001).20. M.H Nurmawati, Int.l J. Polym. Anal. Ch. 9, 213 (2004).21. R. Webb, Int. Electron. Pack. T. Conf. Exhib. (New York, NY:

American Society of Mechanical Engineers, 2003), vol. 2, p. 537.22. X. Luo and D.D.L. Chung, Int. J. Microcircuits Electron. Pack. 24(2),

141 (2001).23. Q. Ngo, Surf. Eng. in Mater. Sci. III (Warrendale, PA : The Minerals,

Metals and Materials Society, 2005) p. 75.24. K. Zhang, Electron. Compo. T. Conf. 1, 60 (2005).25. T. Lee, Electron. Compo. T. Conf. 1, 55 (2005).26. Y. Wu, Appl. Phys. Let. 87, 213108 (2005).27. D.D.L Chung, J. Mater. Sci. 22, 4190 (1987).28. T.A. Howe, C.-K. Leong and D.D.L. Chung, J. Electron. Mater., in

press. �

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UsingNanotechnologyto Enhance Thermal MaterialPropertiesAlan Rae, NanoDynamics Inc., arae@nanodynamics.com

AbstractAs we know, each transistor on a semiconductor devicedissipates a specific amount of heat: if the number of tran-sistors is doubled (as has happened with Moore’s law every18 months) then the heat output doubles also all otherthings being equal. This means the thermal load on heatsinks and thermal interface materials is increasing.

Thermal interface materials may be electrically conduct-ing or insulating. Conductive systems normally containmetal flakes and particles – in addition carbon fibers andnanotubes can be used to develop high strength, high con-ductivity directional thermal conductivity.

Where electrical conductivity is undesirable the approachinvolves using an electrically insulating thermal interfacematerial, typically containing boron nitride. Althoughboron nitride is a fine thermal conductor, the boric oxidesurface formed through atmospheric hydrolysis impedesprocessability and reduces the effective loading and there-fore the overall thermal conductivity. Atomic layer depo-sition of less than ten nanometers of alumina on commer-cial boron nitride thermal fillers using a vapor phase fluidbed technique leads to an inert surface allowing the prepa-ration of a more effective thermal interface material. Thepolymer interface behaves chemically like alumina but inthermal performance behaves like boron nitride.

A TEM of a grain of boron nitride shows clearly the lam-inar structure of the boron nitride and a coherent protec-tive layer of alumina.

F E A T U R E A R T I C L E

Process DescriptionCoating particles is a useful way of modifying bulk

properties much in the same way that candy makerscoat chocolate so it melts in your mouth, not in yourhand. The coating of candy is sufficiently thin so that itdoes not affect the desirable properties of the choco-late! Chemical reactivity, solubility and other propertiescan be modified in industrial raw materials in a similarway in order to match processing characteristics todesired properties.

Preparing coatings on particles to create core-shellstructures can be carried out in a number of ways.Liquid based sequential precipitation and electrolessplating can yield coated particles but subsequent dryingand maintaining the separation of particles can betricky.

Vapor phase deposition by chemical vapor deposi-tion on particles fluidized in a gas stream has the dis-advantage that deposition occurs preferentially at highenergy sites such as defects so that islands of the coat-ing are formed which then coalesce. This results in acoating which may not be perfectly hermetic or uni-form.

Forming nanometer-thin layers on planar surfacesby atomic layer deposition is nothing new to the semi-conductor industry. The technology is well establishedand a range of ultrathin chemistries is possible. Theability to create ultrathin layers on non-planar surfacesis intriguing as a way to coat dissimilar materials withhermetic coatings of refractory and other materials.Sequential layers are built up one atomic layer at a timeas shown schematically in the image at right.

Fig. 2 Temperature difference in computer testing vs. thermal contact conductance inGuarded Hot Plate measurement [28].

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Each layer keys sequentially on to a reactive surfaceto create an ABAB layer where each layer is one mole-cule or atom thick.

In the case of boron nitride the key chemical speciesin sequence are water and tri-methyl aluminum.

The first layer of tri-methyl aluminum attaches tothe hydroxides on the hydrolyzed surface of the boronnitride; a subsequent water hydrolysis of remainingmetal groups results in a hydrated alumina layer.Subsequent cycles result in a coherent hermetic alu-minum oxide layer prepared at near-ambient tempera-tures (<2000C) as hydroxyl groups are eliminated byeach successive step.

Coating is carried out in a sealed fluidized bedwhich maximizes yield and minimizes consumption ofrelatively expensive precursor metal-organics. Theadditional cost of the ALD coating is related to thethickness of the layer deposited and so an effectivecost-benefit compromise can be reached for manyapplications.

Sequential layers continued page 14

A D V A N C I N G

MICROELECTRONICS

14

In the case of boron nitride the key chemical species in sequence are water and tri-methylaluminum.

ResultsIn a series of tests in epoxy composites it was found

that a layer thickness of 20 nm of alumina on a com-mercial BN dropped the thermal conductivity from1.69 to 1.42 W/m.0K but raised the peel strength by25% and decreases the viscosity of the epoxy by sever-al orders of magnitude (Wank et al., PowderTechnology 142 (2004) 59-69). This can allow a high-er loading of boron nitride which itself has a thermalconductivity of 30 W/m.0K.

OpportunitiesThe ability to coat refractory materials such as alu-

mina on substrates at near-to-ambient temperaturesopens intriguing opportunities to modify the chemicalinteraction of ceramic, metal and even polymer parti-cles to create new tools for process and design engi-neers.

AcknowledgementsThis breakthrough in coating particulate materials

was developed at the University of Colorado at Boulderand at ALD NanoSolutions Inc. where it was subse-quently licensed to NanoDynamics Inc. �

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F E A T U R E A R T I C L E

Indium as ThermalInterface Material forHigh Power DevicesFay Hua1, Carl Deppisch2, Tom Fitzgerald2

1 Intel Corporation, 3065 Bowers Ave, Santa Clara, CA95054, USA2 Intel Corporation, 5000 W. Chandler Blvd., Chandler, AZ 85226, USA

IntroductionMoore’s Law predicts doubling the number of tran-

sistors on the chip every eighteen months. While theperformance of the chip increases with increasedpower, the power dissipation through the chip alsoleads to higher die temperatures. In order for thedevices to perform reliably throughout their lifetime,heat has to be effectively withdrawn. Industry has beenusing copper heat spreaders to spread the heat awayfrom the die. The material that connects the copperintegrated heat spreader to the silicon is the TIM,Figure 1. There are two critical functions of a TIM in aflip chip package: (1) to dissipate heat to allow higherprocessing speeds and (2) to absorb strain resultingfrom the mismatch of coefficients of thermal expansion(CTE) of the die, substrate and the integrated heatspreader (IHS) during temperature changes in assemblyprocessing and usage. Polymer TIM has been used as athermal interface material solution due to its excellentstrain absorption and processing capability. However,the majority of polymer TIMs has a bulk thermal con-ductivity less than 4-5 W/mK even with maximumloading of conductive fillers. In order to meet theincreasing demand for heat spreading in high power

devices, solder thermal interface materials were evalu-ated. The feasibility of solder, and in particular indium,as a thermal interface to shift the package resistancedown to the required limits has been demonstrated1,2.Although solders have a significant thermal advantageover polymer TIMs (5 to 20x higher in bulk thermalconductivity), implementation of solder TIMs is verychallenging due to significant reliability and processissues. This report focuses on the solder selection andreliability evaluation of the current generation of solderthermal interface materials at Intel.

Materials SelectionThe bulk thermal conductivity of most solders is

higher than 30 W/m?K which is about 5-10x higherthan traditional TIM materials. The highest bulk ther-mal conductivity solder is pure indium which has aconductivity of about 80 W/mK. In addition to thermalconductivity, numerous other parameters needed to betaken into consideration before the initial solder downselection could occur. Four key criteria were used forthe initial selection: melting range, safety and environ-mental health issues, thermal conductivity and basicmechanical properties.

In general, the thermal interface material and heatspreader are attached to the package in the last stage ofthe assembly process. The solder TIM processing tem-perature is limited by the degradation temperatures ofmaterials assembled in prior steps of the packages. Ingeneral, the process temperature has to be lower than260°C if organic substrates are used. This determinesthat the solder liquidus temperature has to be at least10 to 20 degrees lower than 260°C. The minimumsolidus temperature of the solder has to be high enoughso that the solder joint does not lose its mechanicalstrength due to softening during operation. In general,if high power devices operate at a temperature in therange of approximately 100°C to 120°C, the solidustemperature of the solder is preferred to be higher than150°C. This narrow temperature window limits thenumber of solders that can be selected.

Bulk thermal conductivity certainly has to be thekey selection element, Figure 2. However, there aremany factors that impact on the performance of theTIM. Solder TIM reacts with die side and IHS side ofmetallurgies to form joints. The total layer, or bondline thickness (BLT), in the solder joints includes the

Figure 1. Flip Chip BGA package with thermal interface materials between the die and theintegrated heat spreader (IHS) and the IHS and the heat sink.

16

die side and the IHS side intermetallics, the solder itselfalong with the dissolution products from both jointsurfaces, as well as any voids and micro-crack forma-tion in the solder joints. Therefore, the metallizationon the die and the IHS side and joint quality are criticalfor making workable TIM solder joints. The metalliza-tion process also has to be compatible with the existingequipment set to avoid excessive cost. With these con-ditions, the die side metallization is applied by sputter-ing NiV/Au and the IHS metallization is applied byelectroplating Ni/Au on to the Cu lid. Au facilitates thewetting while Ni is the main reaction layer and diffu-sion barrier layer to the solders.

Ideally the solder has to be as ductile as conven-tional polymers to absorb the thermally induced strainwithout causing early solder joint fatigue failure andsilicon die fracture. From a thermal conductivity pointof view, the thinner the TIM, the better the thermal per-formance. However, thinner TIM layers yield highershear strains on the solder joints, which may translateinto early fatigue failures. Therefore, the TIM thicknesshas to be optimized to get highest total TIM thermalperformance while meeting reliability requirements.

With the above criteria in mind, the potential ele-ments are limited. In order to be compliant with world-wide health and safety legislations, the elements are tin(Sn), bismuth (Bi) and indium (In) with small amountsof silver (Ag), copper (Cu), zinc (Zn) and antimony(Sb). Sn and/or In will be the backbone for the alloysystem, which will react with the metallization on thedie and IHS to form solder joints. Table 1 lists the basesolder alloys that were down selected based upon thenumerous requirements listed above.

Experiments and ResultsThermal testing vehicles were assembled with a

series of alloys with flux supplier recommend reflowprofiles. The thermal resistance was measured from theactive die side surface to the top of the IHS surface.Reliability testing readouts were taken at numerousintermediate points. These readouts included thermalresistance evaluation (TRES) and Acoustic Microscopy(CSAM/TSAM) images. The temperature range forthermal cycling is –55 to 125°C. Readouts were takenat 50 cycles, 100 cycles, 250 cycles, etc. Cross-sectionsof the solder joints and failure units were analyzed withSEM. Voids in the solder joints were detected by X-ray.

Figure 3 shows the measured thermal data on thevarious solders. Eutectic SnIn was not built because itsmelting temperature is too close to the device operationtemperature of 100°C. Pure Sn was built, but die crack-ing was observed after assembly because of the highprocess temperatures required for assembly. EutecticPbSn and pure Indium were the best performers fromthis build. Due to the Pb-free requirements, pureIndium was carried on as the primary choice for furtherdevelopment. Figure 4 shows the thermal performanceof pure indium solder vs. preform thickness at end ofline and Figure 5 shows the thermal performance after250 temperature cycles.

Discussion and ConclusionIn Figure 3, even though indium solder has approx-

imately twice the thermal conductivity of SnPb, the endof line thermal resistance is quite similar. This is

because the PbSn solder has verylow voids in the solder jointswhile soldering pure indium isvery challenging. Eutectic SnBihas the highest thermal resistanceoverall at end of line and degradesvery fast during thermal cycling.The poor performance of SnBi islikely due to its inherent brittlenature. Most of the failuresoccurred in the solder joint itself.Flux and reflow process optimiza-tion is key to meeting productrequirements. This paper will notget into details on this. Larger pre-forms have better thermal cyclingperformance due to the over-sizedpreforms spread more on the IHSlid. Detailed fracture surfaceanalysis was carried out for indi-um solder. All failures occurred at the solder to lidinterface. Figure 6 shows that the thermal cycling frac-ture happens at the indium solder to AuIn2 intermetal-lic interface. Although Indium to AuIn2 interface isweak, a thin gold layer is necessary on the IHS to facil-itate stable wetting to be achieved during the reflowoperation of the assembly process. High quality nickeland gold plating on the IHS is critical to manufacturingreliable solder joints.

With all the evaluation, pure indium is the best can-didate for a solder TIM. Preform thickness is critical formeeting end of line thermal performance and reliabili-ty targets. Au thickness on the IHS lid side is critical toavoid indium solder and AuIn2 interfacial failure.Thinner Au forms a very stable interface. The platingquality of the nickel and gold on the IHS is critical toensuring the success of the solder joint.

AcknowledgementsThe authors would like to acknowledge our man-

agement, co-workers and everyone associated with thisproject.

ReferencesP. Brandenburger, C.A Gonzalez, K. Whittenburg, C. Deppisch, G.F.

Raiser and Y. Guo, “Evaluations of Solder Thermal InterfaceMaterials – Modeling and Validation for Reliability Performance,”IATTJ, 2000, vol. 3, pp. 331-343, 2000.

A. Dani, C. Rumer, C. Deppisch, K. Dayton and C. Matayabas,“Thermal Interface Material Technology Development,” IATTJ,2001, vol. 4, pp.265-277, 2001.

F. Hua and C. Deppisch, Journal of Surface Mount Technology, 19, 21-26(2006). �

Table 1. Base alloy systems physical and mechanical properties.

Figure 2. Thermal resistance vs. BLT. Rjc isthe thermal resistance of the surface of theactive die side to top of the IHS surface. Theestimation is based on one dimensional heattransfer.

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F E A T U R E A R T I C L E

Mechanical Stressesin MountedComponentsDr. Jerry E. Sergent, Chair, Electrical Engineering, Fairfield University,Fairfield, CT 0682, jsergent@stagweb.fairfield.edu

AbstractCracking and breaking of components, such as

chip capacitors and semiconductor die, mounted onboth organic and ceramic substrates, due to TCE dif-ferences and temperature extremes has long beenobserved. This paper attempts to quantify certainaspects of this problem by using both Finite ElementAnalysis (FEA) and theoretical methods.

The stress on a chip capacitor mounted on aprinted circuit board is calculated by FEA consider-ing variations in capacitor size, solder temperature,and fillet height. The most dramatic result from thisanalysis is the dramatic lowering of stress at a filletheight in the range of 0.030,” followed by anincrease in the stress as the fillet height increases.The underlying reasons for this will require more in-depth study, but are most likely due to counteractingforces.

The stress on a semiconductor die is shown theo-retically to be functions of several variables, includ-ing die size, solder temperature, solder thickness,and the shear modulus of the solder. The initial pro-cessing of the die in terms of the cracks generated onthe edges is shown to play an important role in theultimate strength of the system.

1.0 IntroductionWith the advent of lead-free solders, the additional

stress placed on soldered components as a result of thehigher melting temperatures must be considered.When a component is soldered to a substrate (organicor ceramic), as soon as the solder solidifies, the assem-bly becomes an entity consisting of two or more mate-rials with different Temperature Coefficients ofExpansion (TCE). As the assembly cools, the compo-nents and the substrate contract at different rates, plac-ing either tensile or compressive stress on the compo-nent, depending on the value of their respective TCEs.If the resultant stress exceeds the strength of the mate-rial, cracks will be generated in the component thatmay propagate to the point of breakage.

This paper considers two aspects of thermal stress:a chip capacitor mounted on a printed circuit board anda power semiconductor die soldered to a ceramic sub-strate, two very common configurations found in elec-tronic assemblies. Finite Element Analysis (FEA) mod-els are created and analyzed under various conditionsto determine how the stress on the component varieswith different component size, different solder reflowtemperatures, and different fillet heights.

2.0 Chip Capacitor Mounted to aPrinted Circuit Board

Chip capacitors are formed by alternating layers ofdielectric material and conductor paste and firing thecombination into a monolithic structure. The dielectricmaterial is primarily barium titanate mixed with mate-rials called “shifters,” which shift the Curie point high-er or lower in temperature and “depressors,” whichlower the dielectric constant in a given temperaturerange with the effect of making the dielectric constant

lower but more consistent with temperature. Thus, byshifting the Curie point higher in temperature, a regionwith a low dielectric constant but which is relativelyinsensitive to temperature changes is created. This typeof material is called “COG” or “NPO.” These capaci-tors are used in applications, such as tuned circuits,that require high stability. By shifting the Curie pointto room temperature, a material is created that has ahigh dielectric constant, but which varies widely aboveand below room temperature. Materials of this type,called “Y5V” or “Z5U,” are commonly used as decou-pling capacitors in commercial equipment that does notsee temperature extremes. Materials with both depres-sors and shifters added, called “X7R,” have the Curiepoint at room temperature also, but the peak is widerand these materials may be used as decoupling capaci-tors over an extended temperature range.

The conductor material is silver or palladium/silverconnected on alternate layers by the same alloy to cre-ate the plates of the capacitor. The ends may be platedwith nickel and palladium silver to minimize leachingof the end electrodes during the soldering process. Theresult is a structure as shown in Figure 1 with dielectricconstant vs. temperature curves as shown in Figure 2.

As shown in one study [1], the mechanical strengthof the capacitors is strongly influenced by the type ofmaterials that make up the capacitor. NPO (COG)capacitors proved to be the strongest, followed by X7Rand Z5U. The reason for this appears to be changes inthe microstructure due to the addition of the suppres-sors/depressors. In addition, the mechanical strengthwas shown to be improved by the addition of more sil-ver to the electrodes. A variation of almost 100% in themechanical strength was seen from different manufac-turers.

18

Most of the studies to date have been of the empiri-cal type using data analysis, as the large number of vari-ables makes it difficult to perform a meaningful analyt-ical study. Finite Element Analysis (FEA) makes it pos-sible to analytically detect trends by examining thestress on different structures at different temperatures.

The model used for the analysis mirrors that of thematerials and the structure as shown in Figure 3. Thematerial parameters for the three materials are given in

Table 1. Note that, for the PCB, the TCE for the x -and y - axes is different from the TCE for the z – axis.This model allows for the interaction of the materials astemperature, size, and fillet height are varied.

This model was analyzed to determine the stress onthe capacitor for different temperatures, differentcapacitor sizes, and different solder configurations todetermine guidelines for these parameters in order tominimize the chances for capacitor damage as a resultof the reflow process. Typical stress values required tobreak the capacitors in empirical studies range from250 – 300 MPa (36.3 – 43.5 kpsi) [1]. The matrix ofvariables is shown in Table 2. The stress was deter-mined at 25oC and -40oC for each solder temperature.

FEA analysis using the ANSYS program was per-formed for each of the configurations in Table 2. A typ-ical result for a 1206 capacitor with a solder fillet of0.010” soldered at a reflow temperature of 183oC (rep-resenting Pb63/Sn37 solder) is shown in Figure 4.Note that, referring to Figure 5, the maximum stress isat the point under the capacitor where the edge of thePCB pad is soldered to the capacitor. As the filletmoves higher on the capacitor termination, the point ofmaximum stress gradually shifts to the termination aswell as shown in Figure 6.

Figure 1. Cross-Section of a Typical Chip Capacitor

Figure 2. Temperature Coefficients of Dielectric Materials

Figure 3. Model of the Analysis Configuration

Table 1. Parameters of Materials used in the Capacitor Study

Table 2. Matrix of Variables in this Study

continued page 20

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Plots for the various combinations are shown inFigures 7 and 8.

Figure 7 shows how the stress on a chip capacitorvaries as the solder temperature is increased from183oC to 290oC. The solid lines represent an ambienttemperature of 25oC while the dashed lines representan ambient temperature of – 40oC. When solderedwith the Pb10/Sn90 solder (290oC), the stress on the2225 capacitor begins to approach the breaking pointeven at room temperature. At – 40oC, the breakingstrength is exceeded even for an 1812 capacitor.

Figure 8 demonstrates the most dramatic result ofthis study, a steep reduction in the stress as the filletheight approaches 0.030” followed by an increase instress as the fillet height further increases. The exactexplanation for this phenomenon requires furtherdetailed study of the capacitor structure, but is proba-bly due to the cancellation of opposing forces. Thisfactor has been noted in practice and appears in manyguidelines for mounting chip capacitors. This data wasrepeated on both two-dimensional and three-dimen-sional models for all three capacitor sizes, 1206, 1812,and 2225 to verify the results.

3.0 Silicon Die Mounted to a CeramicSubstrate

When a component, such as a semiconductor die, ismounted to a substrate, a three-layer structure com-posed of the substrate, the die attach material and theactive die is formed as shown in Figure 9. For a struc-ture of this type, excessive stress can occur when eitherone of two conditions is present [2]:

1. When the TCE of the die is sufficiently lowerthan that of the substrate such that the result-ant stress is greater than that of the tensilestrength of the die material when the structureis in thermal equilibrium. This condition mayoccur when no power is applied to the die andthe structure is subjected to temperatureexcursions, or “temperature cycling.”

2. When a non-equilibrium condition exists suchthat the temperature differential between thedie and the substrate is sufficiently large tocreate a stress condition greater than the ten-sile strength of the die. This condition may bebrought about when the thermal resistance ofthe die bond is high due to improper selectionof materials, when voiding occurs at the diebond interface during transient power condi-tions, or during “power cycling,” when the dieis operating.

In many practical situations, both conditions existto a greater or lesser degree. In this case, the strain isgiven by

whereTCED = temperature coefficient of expansion of the dieTCES = temperature coefficient of expansion of the substrateTD = temperature of the dieTS = temperature of the substrateTA = ambient temperature with the power offTwo situations are of further interest [3].

continued from page 19

Figure 4. Typical FEA of a Chip Capacitor Soldered to a PCB

Figure 5.

Figure 6.

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1. TD = TS. In this case, the power dissipated in thedie is negligible or nonexistent, and Eq. (1) reducesto

This is the situation described by temperature cycling.

2. TCE D = TCE S. In this case, the TCEs of the dieand the substrate have been made equal by propermaterial selection during the design process. Eq. (1)reduces to

This is the condition described by power cycling orhigh thermal resistance, which creates an excessivetemperature gradient from the die to the substrate.

The analysis presented here may be considered a“best-case” analysis, since most experimental resultswill result in lower figures than calculated. There is awide variation in experimental data due to the largenumber of variables present in the component attachprocess. There are many other considerations that willdetermine whether or not a failure occurs, such as afault in the material, which concentrates the stress at agiven point, or failures that occur as a result of exces-sive mechanical fatigue when a structure is subjected toa number of temperature excursions.

Frequently, the maximum stress is observed whenthe structure is cooled down from the die attachprocess, since the process temperature is greater thanthe operating temperature. The stress is maximum atthe corners and is given by [4]

whereSM = maximum stress at the die corners in Pa or psiED = die modulus of elasticity in Pa or psi ES = substrate modulus of elasticity in Pa or psi G = shear modulus of bonding materialL = maximum die dimension in units of lengthtB = adhesive bond thickness in units of lengthtD = die thicknesstS = substrate thicknessTP = processing temperature in oC

= glass transition temperature for epoxies= solidification temperature for solders

TA = ambient temperature or temperature of interest.

Note:lb./in2 = 6.90 x 10-3 x n/mm2

N/mm2 = 1.45 x 102 x lb./in2

N/mm3/2 = 28.77 x lb./mil3/2

lb./mil3/2 = 3.48 x 10-2 N/mm3/2

Data obtained by Bolger and Mooney [5], and VanKessel, et al. [6] agrees with Eq. (4) within the accura-cy of the measurements.

Figure 7. Stress vs. Length for a Capacitor for various Solder Temperatures

Figure 8. Stress vs. Fillet Height for an 1812 Capacitor at Various SolderTemperatures in Ambient Temperatures of 25oC and – 40oC.

Figure 9: Substrate – Solder – Die Configuration

continued page 22

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It should also be noted that many of the parametersin Eq. (4) and Eq. (5) are functions of temperature.Where the variation is extreme over the temperaturerange of interest, this should be considered when mak-ing direct comparisons between materials.

The brittle nature of certain of the materials used inelectronic circuits plays a role in the packaging of thesecomponents. In practice, the force required to fracturea semiconductor die or ceramic substrate is much lowerthan predicted by theory. The discrepancy is due tosmall flaws or cracks residing within these materials asa result of processing. For example, when a semicon-ductor die is sawed, small edge cracks may be created.Similarly, when a ceramic substrate is fired, trappedorganic material may outgas during firing, leaving amicroscopic void in the bulk. The result is an amplifi-cation of the applied stress in the vicinity of the voidwhich may exceed the tensile strength of the materialand create a fracture. If the microcrack is assumed tobe elliptical with the major axis perpendicular to theapplied stress, the maximum stress at the tip of thecrack may be approximated by [7]

whereSM = Maximum stress at the tip of the crackSO = Nominal applied stressa = Length of the crack as defined in Figure 10rt = Radius of the crack tip

The ratio of the maximum stress to the appliedstress may be defined as

where K t = Stress concentration factorFor certain geometries, such as a long crack with a

small tip radius, Kt may be much larger than one, andthe force at the tip may be substantially larger than theapplied force.Based on this analysis, a material parameter called the“Plain Strain Fracture Toughness” which is a measureof the ability of the material to resist fracture can bedefined as

where K IC = Plain strain fracture toughness in

psi-in1/2 or Mpa-m1/2

Z = Dimensionless constant, typically 1.2 [6]S C = Critical Force required to cause breakage

From Eq. (7.12), the expression for the critical forcecan be defined as

When the applied force on the die due to TCE orthermal differences exceeds this figure, fracture is like-ly. The plain strain fracture toughness for selectedmaterials is presented in Table 3. It should be notedthat Eq. (9) is a function of die thickness up to a point,but is approximately constant for the area to thicknessratio normally found in semiconductor die.

Van Kessel et al. [6] present data obtained bymounting strain gauges with epoxy and by eutecticmeans. This data indicates that such factors as bondthickness and bond voids may reduce the applied stressby more than an order of magnitude from that calculat-ed by Hooke’s Law.

Figure 11 plots the calculated stress on a die 0.250”x 0.250” x 0.015” mounted on an alumina substrate0.025” thick as a function of bond thickness for threedifferent materials; conductive epoxy, Sn10/Pb90 sol-der, and Sn96.5/Ag3.5 solder. Note that the processingtemperature plays an important role. Solders with sim-ilar moduli of elasticity but with drastically differentmelting points will create higher stress in the die. Thecritical stress for three defect sizes, 1m, 2m, and 3m isplotted on the same curve.

Figure 12 plots the maximum stress for the same dieas a function of ambient temperature with a bondthickness of 0.002.” Note that the stress increases in alinear fashion as the temperature decreases. The moststressful situation for a power die is to be turned on ata low ambient temperature, as the die-substrate combi-nation will have the greatest temperature differentialand produce the highest stress.

continued from page 21

Table 3. Fracture Toughness for Selected Materials

Figure 10. Cracks and Chipouts in Semiconductor Devices

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It is often critical to know the maximum die sizewhich can be mounted on a substrate. Figure 13 plotsEq. (7.6) as a function of die size for a square diemounted onto a ceramic substrate with Sn96.5/Ag3.5solder with ambient temperature as a parameter. Thebond thickness is assumed to be 0.002”

Performing FEA on crystalline materials such as sil-icon is not generally accurate since the Modulus ofElasticity is so difficult to measure. Typically, as shownin the analysis, crystalline devices tend to shatter dueto inherent cracks and chipouts before an accuratevalue can be obtained. However, FEA can be used toidentify the stress points in a structure so that they canbe addressed in the design. Figure 14 shows the max-imum stress points in the corners, as expected.

In this analysis, the bottom of the substrate is fixedas if mounted to a heat sink.

This analysis indicates the importance of the diepreparation and handling process in minimizing thestress on silicon die soldered to a substrate.

It should be further noted from Eq. 4 that the shearmodulus of the solder plays an important role in mini-mizing stress. Table 4 [2] lists the fatigue characteris-tics of various solders. The solder selected for thisstudy, Sn96.5/Ag4.5 is considered one of the best.

4.0 Conclusions

� High-temperature solders increase the stress onmounted components

� Stress in soldered capacitors may be minimized bylimiting the fillet height to 0.030”

� Stress in silicon die mounted to a ceramic sub-strate may be minimized bya. Increasing the bond thicknessb. Proper handling and processing during die

preparationc. Using solders with a low shear modulus

Figure 11. Stress vs. Bond Thickness 0.250” x 0.250” x 0.015” Silicon die Aluminasubstrate 0.050” thick

Figure 12. Stress vs. Ambient Temperature Silicon die 0.250” x 0.250” x 0.015”Alumina Substrate 0.050” thick Bond thickness 0.002”

Figure 13. Stress vs. Die Size Die Thickness = 0.015” Bond Thickness = 0.002”Solder Ag96.5/Ag3.5 Alumina Substrate 0.050” thick

Table 4. Fatigue Properties of Various Solders

continued page 24

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References[1] Jim Bergenthal, “Mechanical Strength Properties of Multilayer

Ceramic Chip Capacitors,” Proceedings of the 11th Capacitor andResistor Technology Symposium, 1991.

[2] Sergent, J.E., and Harper, C.A., Eds., “Handbook of HybridMicroelectronics, Second Edition,” McGraw-Hill, 1995.

[3] Bolger, J.C., “Polyimide Adhesives to Reduce Thermal Stresses inLSI Ceramic Packages,” 14th National SAMPE TechnicalConference, Atlanta, GA, October, 1982.

[4] Sergent, J.E., and Krum, A., “Thermal Management Handbook forElectronic Assemblies,” McGraw-Hill, 1998.

[5] J. C. Bolger and C. Mooney, “Die Attach in Hi-Rel P-Dips:Polyimides or Low-Chlorine Epoxies?,” Proc., IEEE ComponentsConf., 1984.

[6] C. G. M. Van Kessel, S. A. Gee, and J. J. Murphy, “The Quality ofDie Attachment and Its Relationship to Stresses and Vertical Die-cracking,” Proc. IEEE Components Conf, 1983.

[7] William D. Callister, Jr., “Materials Science and Engineering - AnIntroduction,” John Wiley & Sons, 1991. �

continued from page 23

Figure 14. Finite Element Analysis of a Silicon Die Soldered to an Alumina Substrate

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F E A T U R E A R T I C L E

Lowest ESR at High Voltage -MultianodeTantalumCapacitorsI.Horacek, L.Marek, J.Tomasko, T.Zednicek, S.ZednicekAVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic

AbstractPower supply and networking applications

require higher voltage range of tantalum capacitorswith lowest possible ESR. The paper describes a newtechnology based on multianode construction thatwas developed in order to bring ESR of 25V, 35V and50V parts to the currently lowest ESR level. Thetechnology upgrade was possible only with modifi-cations to the anode construction, sintering process,forming and manganizing. Special processes of for-mation were developed in addition to improvedbreak down resistance at higher voltage.

IntroductionTantalum capacitor technology has many character-

istics ideal for filtering applications in DC/DC convert-ers, power supplies and other applications. The mostimportant and common characteristics are:

� Low and Stable ESR� High Capacitance Retention at High

Frequencies � Low Failure Rate� Wide Voltage Range� Surge Robustness� Environmental Robustness (moisture/temper-

ature)� Low Cost

One of the most important parameters that have aneffect on the characteristics above is the shape of theanode. The overall surface area of a tantalum capacitoranode, particularly its surface-to-volume ratio definesits ESR value - the higher the overall surface area, thelower the ESR.

The single anode (Figure 1a) is the standard usedfor general capacitor designs because of cost and per-formance efficiency. A multi-anode design (Figure 1b)offers the lowest ESR. The fluted anode design (Figure1.c) is a compromise solution between single andanode design as regards low ESR and manufacturingcost. More references see [1], [2], [3].

Multianode construction with conventional MnO2second electrode system has a couple of advantagescompared to emerging polymer multianode capacitorssuch as “true” lead-free reflow capability, better stabili-ty at humidity load and potential for higher voltagecapacitors. Especially in high voltage fields like 25 to50V multianode tantalum designs would offer the low-

est ESR in the industry and help electronic devicedesigners to develop a new range of smaller and highlyefficient power supplies. There are however some tech-nology limitations that made preparation of such partsdifficult. This paper describes new technology thatenabled AVX to achieve the lowest ESR 25 to 50V tan-talum SMD multianode capacitors.

High Voltage Multianode CapacitorThe development effort yielded a brand new catego-

ry of low ESR high rated voltage tantalum capacitors.Frequency characteristic of E case 33uF 35 V multian-ode capacitor - see Figure 2. The ESR value at 100 kHzis about 40mOhms. But the way to achieve it was notstraightforward.

Pressing & SinteringIt is necessary to sinter the capacitor pellet at quite

a high sinter temperature in order to produce high volt-age parts with sufficiently robust inter-particle necks. Ifthe necks are not thick enough, then they are discon-nected or thinned too much during the dielectric form-ing and the part reliability becomes poor.

Unfortunately, such high temperature neck formingis accompanied by massive shrinkage of the tantalumpellet. When the anode structure is not even and non-uniform shrinkage occurs then distortion can beachieved as seen in Figure 3. Such anodes are naturallyunsuitable to be built in the anode multi package.

To overcome this issue we had to optimize the tan-talum powder mixing method using a special binder.Side pressing was employed due to better homogeneityalong the anode length. The sintering operation had tobe optimized as well to reduce non-linear shrinkage.Finally the optimal method for anode production wasdeveloped with good quality for later multi packaging(Fig.4).

Dielectric FormingDielectric formation is the most important opera-

tion during the tantalum capacitor production.Tantalum pentoxide is formed electrochemically as a namorphous hydrated glass. Nevertheless some crystal

Figure.1. Anode design in cross section

a] single anode c] fluted anodeb] multi anode

27

seeds are always present at the tantalum surface as aproduct of oxygen post sinter precipitation. The dielec-tric crystal growth depends on temperature and time.Therefore careful thermal management during the firstforming is substantial for anode long-term reliability.

As anodes undergo thermal shocks in manganisingthey have to be pre-treated at forming. Therefore theforming is usually interrupted by high temperaturebaking. But in addition to the mechanical stress relax-ation and dielectric mechanical breaks (due to the dif-ferent thermal expansion of Ta and Ta2O5) the dielec-tric is being dehydrated at this operation. This is a seri-ous phenomenon as it creates oxygen vacancies, whichcan take part in the dielectric electrical break down.The vacancies had to be chemically neutralized by oxy-gen donators. The thicker the dielectric the more seri-ous the issues.

In the final capacitor construction, the anode outersurface is the most electrically-stressed area and theedges are really critical, especially the sharp edges. Thewhole electrical charge going inside the anode has to bedivided into streams at the surface. Therefore if an elec-trical breakdown appears, then it is frequently at theouter surface. Lower rated voltage codes use a so-called“shell form” for protection of the outer surface, whichmeans that the dielectric thickness is significantlyincreased selectively at the outer surface only.

So development of “shell formation” for high ratedvoltage codes like E 33uF/ 35 V (see Fig. 5) was anoth-er important step. When a conventional shell formapproach was used, the resulting color (result of lightdiffraction at thin dielectric layer) is somehow uneven,due to the volt drop along the anode during shell form-ing. Nevertheless the outer dielectric corresponds tothe forming voltage 125 – 130 V in contrast to 104 Vfor the non-shell formed, for instance. This means thatthe surface dielectric electrical field intensity isdecreased from 190 kV/mm to 150 kV/mm. By furthermechanical and chemical development it has beenachieved that the outer dielectric color is uniform andcorresponds to an even higher voltage (140 V forinstance) without additional capacitance drop. Theelectrical field intensity at the surface dielectric is fur-ther decreased to approximately 135 kV/mm.

The surface electrical stress reduction due to theshell is consequently apparent at the capacitor break-down voltage distribution (Fig.6). With the shell thebreakdown voltage distribution becomes narrower andshifted to the higher voltage value. That means the partreliability is improved in comparison to that of conven-tional forming methods.

ManganisingThe anode structure of high rated voltage tantalum

capacitors differs to the one of finer powders. Thestructure has different shape and broader inter particlechannels, for instance. Therefore the manganese nitratedecomposition, as a chain reaction, takes place fasterand is more vigorous than we usually observe at finertantalum powder pellets. The inter-connective agglom-erate channels act like “chimneys” where the nitricoxides collect and accelerate to the surface. The nitricoxides splash at the surface and form manganese diox-ide creating “blow holes” and “blow hills.” As a result

Fig.2. ESR vs frequency E 33uF / 35 V multianode tantalum capacitors.

Figure 3. Non-acceptable anodeshape post sintering.

Figure 4. Acceptable anode shapepost sintering.

Figure 5. [green] - non-shell formed anode (104 V);[red] - conventionally shell formed anode (125-130 V);[blue] - especially shell formed anode (140 V).

Figure 6.Break down voltage distributions ondifferently shell formed E33uF /35 V tantalummultianode capacitors. continued page 28

28

the outer layers of the manganese dioxide are oftenuneven and crusty (Fig.7).

Such crustiness influences not only the successfulassembly of tantalum multi-anode capacitors but canalso effect the final part performance. The silver diffu-sion penetration probability increases in blowhole areasstrongly.

Even and homogeneous manganese dioxide coathad to be developed especially for the high rated volt-age parts (Fig.8.). The optimization covered the man-ganese nitrate concentration and application sequencesbut especially the conditions during the manganesenitrate decomposition.

Silver and Graphite A unique system securing low ESR and superior sta-

bility in humidity was developed for fluted low ESRcapacitor design [1] and the same system was used formulti-anode concept as well. The great stability inhumidity of E 33uF / 35 V tantalum multianode capac-itor is documented in Fig.9.

ApplicationsThe process described above has been applied to

capacitors with rated voltage 25 to 50V. The key appli-cation area will be in telecommunication / base sta-tions, power supply and automotive industries wheresmall, high efficiency power supplies are needed. 25 to50V tantalum multi-anodes will offer the lowest ESR inthe industry to support these applications for typicaloperating voltages 12 to 24V. The ESR level for E 68uF25V part is as low as 55mOhm and for E 33-47uF 35V65mOhm and for E 10uF 50V 120mOhms.

Summary & ConclusionA new technology for conventional tantalum multi-

anode has been developed in order to increase voltagerange of the series. More technology modifications hadto be adjusted that include:� Anode design� Pressing & sinter� Dielectric forming� Manganising � Silver & graphite system

References1] I.Horacek at col. “Improved ESR on MnO2 tantalum capacitors at

wide voltage range” CARTS USA 2002, Proceeding2] E.Reed, J.Marshall “18mOhms and Falling – New Ultra Low ESR

Tantalum Chip Capacitors” CARTS USA 1999 New Orleans pp133-141

3] J.Ladd, “Lowest Available ESR Conformally-Coated Multiple-AnodeTantalum Capacitor” CARTS �

Fig. 7. Unacceptable outer manganese layers for anodes going to the multi-pack

continued from page 27

Figure 8. The right shape of high rated voltanodes post manganising.

Figure 9. E33uF / 35 V tantalum multianode capacitor humidity stabilitybefore (red) & after (blue) special graphite-silver layer introduction [1000 pcs,post 85°C, 85 % RH, 250 hours, 20 s measurement soak time]

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Scenes from HITEC 2006

Photos courtesy of Rick Mohn, IMAPS Staff.

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Take Time toSharpen the Saw!... Sign Up for a PDCTom Green, 2006 PDC Chair

For those ofyou not familiarwith the termPDC it stands forP r o f e s s i o n a lD e v e l o p m e n tCourse. Typicallyit is a full or half-day educationalseminar taught byan industry expertat an IMAPS eventand focuses on aspecific technolo-gy area. In SanDiego the coursesrun on Sundayand Monday ofsymposium week.The PDCs aredesigned to edu-cate our member-ship at large andis a primary mis-

sion of IMAPS. This year’s PDC selection includessome familiar topics covering the basic technologyareas along with several new courses including BioMedand Nanotechnology Manufacturing.

A day or two of professional education is a great wayto stay competitive, both from a personal and companyperspective. “Enlightened” is how most students feelafter attending an IMAPS-sponsored PDC. Besides theobvious opportunity to learn and grow, attending aPDC is a great way to network. It’s fun to meet andconnect with others in the industry, often faced withthe same challenges and day to day struggles with tech-nology. The PDC experience includes coffee breaks, anice lunch and social hour at the end of the day to min-gle with fellow students and get to know the instructoron a more personal level. All the PDCs include a fullset of comprehensive notes for the student and manyalso include a textbook. Class sizes typically rangefrom eight to twenty students and there is always ampletime for questions. The instructors are seasoned pro-fessionals hand picked from industry and academia.Many companies require ongoing professional educa-tion and the selection offered by IMAPS is a great wayto fulfill this requirement.

The PDCs were very well attended at the recentDevice Packaging Symposium in Phoenix. So if you’reinterested, get your paperwork together, get approvaland get signed up early!

See you at the PDCs in San Diego! �

IMAPS2006,where to be!

Photo courtesy of San Diego Convention & Visitors Bureau

SeaWorld La Jolla Cove

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ICEP, the Only InternationalJisso Conference in Japan,was Held in April

Every year, in the beautiful cherry blossom seasonin Japan, the International Conference on ElectronicsPackaging, ICEP, is held in Tokyo, co-sponsored byJapan Institute of Electronics Packaging, JIEP, andIEEE-CPMT Japan chapter. Please take a look at theURL, http://www.jiep.or.jp/icep/index.html. This con-ference was named ICEP in 2000, but has been heldsince 1980. This year, 231 participants, including 68presenters, gathered together at Shinagawa PrinceHotel, from 15 countries, and had a very wonderfultime discussing the state-of-the-art of packaging tech-nologies.

As most of you know, Jisso is a Japanese word, andit represents the technologies from LSI packaging toprinted wiring board and product assembly. It covers avery wide technology field, and JIEP is the only organ-ization in charge of it in Japan. Actually, IMAPS-Japanis one of the internal committees in JIEP. Since theICEP is the only international conference on Jisso, it isdesigned to provide as many opportunities as possiblefor not only Japanese, but also international researchersand engineers to obtain various knowledge of Jisso.

Also, this conference is supported by IMAPS Asia-ALC. Alongside the conference, the ALC and WLCmeetings were held to introduce the current status ateach IMAPS chapter and to exchange information.Most of the participants cannot attend these meetings,so let me describe the contents a little bit for you. Afterthe luncheon, the affiliate member system and web siteconstruction of IMAPS-Japan were explained by Dr.Watanabe of Hitachi Chemical, and Prof. Denda ofNagano Pref. Institute of Technology, respectively. Theaffiliate member system has not been started yet inJapan, but we would like to look for the way by goodcollaboration with other IMAPS chapters. Next, theALC meeting was convened. Prof. Denda and Dr. Fu inTaiwan, the ALC vice president, showed the proposedIMAPS-Asia ALC organization in 2006, and it wasapproved. Dr. Asai of Toshiba explained the Asian edi-tor position for Advanced Microelectronics, and then sev-eral activities in the Asian chapters were introduced by

chapter members. Finally, the WLC meeting was held,and two photos are attached, showing the meeting. Mr.Drehle, IMAPS NA President, Dr. Romenesko, previousIMAPS NA President, and Mr. Collander, IMAPSEurope President, presented the global event strategyand membership benefits concerning the affiliate sys-tem. Basically, each IMAPS chapter is operated inde-pendently; it seems to take some time to reach a con-clusion. However, all the technology information isshared so quickly by global network progress that moreefficient collaboration among the IMAPS chapters mustbe important.

To close my short article, let me introduce you to thereception information. The official ICEP reception washeld the night of the first day, and 150 people enjoyedJapanese cuisine and useful discussion. Additionally,the international party was held on the second day foroverseas participants. I co-hosted this small party, soeveryone who joined the party had a lot of fun chattingwith international friends and enjoyed a famousJapanese raffle game.

Next year, the ICEP will be held again in April.Please check it on the web, and see you in Tokyo!

Shintaro Yamamichi received B.E. and M.E. degrees inelectrical engineering, and a Ph.D. degree from KyotoUniversity, Kyoto, Japan in 1987, 1989 and 2002, respec-tively. He joined NEC Corporation in 1989 and wasengaged in the research on high dielectric constant(Ba,Sr)TiO3 thin films for DRAM applications. FromAugust 1996 to August 1997, he was a Visiting IndustrialFellow at the Department of Electrical Engineering andComputer Science, University of California, Berkeley,where he studied reliability issues on oxide thin filmsunder Prof. Chenming Hu. At NEC, he is now a PrincipalResearcher in Jisso and Production Technology ResearchLaboratories, Sagamihara, Japan, and is leading aresearch team concerning the packaging substrate, wafer-level thick Cu wiring, and novel System-in-Package. He isa member of the Japan Society of Applied Physics andJapan Institute of Electronics Packaging. �

Shintaro Yamamichi,NEC Corporation

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France:Meetings Program:Interconex 2006, Besançon, September 26-29

As announced before, INTERCONEX 2006 will beorganized in association with Micronora, from Tuesday26th to Friday 29th of September 2006, at “Parc desexpositions Micropolis,” Besançon, in the FrancheComté Region.

Taking into account the industrial environment andthe attendance of Micronora, the technical committeeof INTERCONEX 2006 oriented the calls for paper tothe complementary aspects of microelectronics and ofmicromechanics: The manufacturing processes ofmicroelectronics components and devices, the integra-tion of mechatronics devices, of microsensors, microac-tuators and MEMS and the related packaging solutionswere the main targets of the calls.

After the selection of papers, the technical programhas been organized in four sessions:

Session A: Micromechanics applied to MicrotechnologiesSession B: 3D integrationSession C: Microsystems and MicrosensorsSession D: Materials, innovative processes

The final technical program will be available on theweb.

More on Interconex 2006: www.imapsfrance.orgMore on Micronora: www.micronora.com

ARCSIS Flexible Electronics, November 23-24, STMicroelectronics University

IMAPS France is co-sponsoring a meeting onMicropackaging, one of the strong activities of theregion. This event is organized by ARCSIS, Associationpour la Recherche sur les Composants et les SystèmesIntégrés (ex-CREMSI), based in the region Provence-Alpes-Côte d’Azur.

The aim is to enhance the potentialities of the regionand, as well, to present advanced technologies and tofacilitate contacts between equipment manufacturers,suppliers and laboratories, in order to initiate coopera-tive research projects.

This year, the following topics will be tackled:� Flexible Electronics � Flexible Packaging

More on Arcsis: www.arcsis.org

News from the Chapter:SIP/SOC day, in the frame of Minatec Crossroads,May 30, Grenoble

When this July issue will be published, the SIP/SOCmeeting of IMAPS France will have been held, May 30,in Grenoble, in the frame of MINATEC Crossroads.

The morning was dedicated to packaging solutionsfor system integration.

Benefits and limitations of SIP and SOC solutionswere compared thanks to five high level papers.

Carlo Cognetti (STMicroelectronics), Jean-MarcYannou (Phillips), Eric Rochard (Freescale), RalfPlieninger (Infineon) and Christian Val (3D+) acceptedto present their respective view in that interestingdebate.

After lunch, participants were invited to visit,according to one’s preference, the facilities of one of thefollowing three companies: Thales LCD, Mesatronic orST-Microelectronics.

More on Minatec Crossroads: www.minatec-crossroads.com

2007 activitiesIn March - following the advice of the Management

Committee of IMAPS France - the board decided tomake every effort in order to:

� Propose to our members, exhibitors andother participants, an event program withrelatively stable reference marks

� Prepare future calendars on two slidingyears, so as to choose, under the most favor-able conditions, the locations, the dates andthe partnerships

� Inform, as soon as possible, all interestedparties

This approach has made it possible to make a calen-dar of events for 2007. It will be progressively consoli-dated according to the confirmation of dates, placesand technical programs. We have a plenty of time todetail this future program.

We only would like to inform you of the mainFrench events of the year 2007, besides the

European Conference EMPC in Oulu, Finland, June 17-20 and February 2007, 2nd ATW Micropackaging &

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Thermal Management, Hôtel Mercure, La Rochelle.The success of the first European ATW on

Micropackaging and Thermal Management, inducedour board to organize the second issue next year, in LaRochelle again. 25-26 September 2007, INTERCONEX 2007, Centre deCongrès Pierre Baudis, Toulouse

On the same way, the success of the regional techni-cal day in Toulouse in 2004, leads to consider the cap-ital of Midi-Pyrénées as a good place for the annualforum Interconex 2007. Toulouse, one of the mainaerospace poles in Europe has, in addition, a favorableenvironment, including industry and laboratories inthe fields of advanced electronics, automotive and trainequipment.

IMAPS France websiteThe “member only” section is open to our members

with their membership number as a password. Besidethe directory of IMAPS France, papers presented atIMAPS events, are available on line.

In addition, on the web site of IMAPS France, youcontinue to find:

� An updated information on IMAPS-France,its organization, and the subsidiaryInterconex

� Short reports on recent events� Program of future events� A membership registration or renewal

on line� Short news and an employment exchange

area Visit us @: www.imapsfrance.org Links are available for a direct access to other chapters in Europe and United States.

More information?IMAPS France, Events, Membership? Florence Vireton, Bureau IMAPS-France 49 rue Lamartine - 78 035 VERSAILLES cedex Phone: 33 (0) 1 39 67 17 73Fax: 33 (0) 1 39 02 71 93E-mail : imaps.france@imapsfrance.orgInputs from France must be sent to: jean-paul.droguet@wanadoo.fr

Germany:Meetings Program:Annual conference, Munich, October 10-11

Please check www.imaps.de

More information? On IMAPS Germany? Events?Latest CD ROM proceedings? Membership? Pleasecontact: www.imaps.deMartin Oppermann, Point of Contact AM,martin.oppermann@imaps.de

Italy:News from the Chapter:New board 2006-2007

Roberto May – President Tino Taddei – Vice PresidentGiorgio Carcano – TreasurerJanmario Reina – SecretaryLuigi Calligarich – MemberAntonello Ciappesoni – MemberRoberto Corno – MemberRoberto dell’Acqua – MemberGiovanni Del Rosso – MemberAlessandro Gandelli – MemberMichele Sommaruga – MemberRoberto Tiziani – MemberClaudio Fossati – Account AuditorFlavio Cereda – Account Auditor

More information? For more information on IMAPSItaly and its events, please look at:www.imaps-italy.it

Nordic:Meetings Program:Annual conference, Elite Hotel, Gothenburg,September 17-19

The annual conference will focus on SIP, advancedpackaging, 3D, embedding, integrated passive devices,advanced substrate technologies, opto and nano tech-nologies.

Please consider joining this great event!

For further details, please check the IMAPS Nordichomepage at www.imapseurope.org,

News from the Chapter:More information? On IMAPS Nordic? Events?Membership? Please check the IMAPS Nordic home-page at www.imapseurope.org

Poland:Meetings Program:30th Annual conference, Cracow, September 24-27For further details, please checkwww.imaps2006.imaps.org.pl

SloveniaMeetings Program:MIDEM’06 - 42nd International Conference onMicroelectronics, Devices and Materials, with jointWorkshop on MEMS and NEMS , Sept 13-15 Organizer:

MIDEM - Society for Microelectronics, ElectronicComponents and Materials, Stegne 7, 1000 Ljubljana

continued page 34

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Conference Sponsors:Ministry of Education, Science and Technology of

the Republic of Slovenia, IMAPS, Slovenia Chapter,IEEE, Slovenia Section

General Information:We welcome you to the 42nd International

Conference on Microelectronics, Devices and Materials,MIDEM’06, together with the joint Workshop onMEMS and NEMS. This conference continues the tradi-tion of annual international meetings organized byMIDEM-Society for Microelectronics, Devices andMaterials, Ljubljana, Slovenia. These conferences havealways attracted a large number of Slovenian and for-eign experts working in mentioned fields as well asmany distinguished invited speakers. Therefore, once ayear scientists and engineers have the opportunity topresent their activities and research results to a broadaudience and to discuss new trends and problems relat-ed to their fields. The official Conference language isEnglish.

The conference will be held in the beautiful sea sideresort at the Slovenian Adriatic coast. Looking forwardto meet you in Slovenia!

MIDEM’06 Conference - Topics:Novel monolithic and hybrid circuit processing

techniques, New device and circuit design, Thin films,Thick films, Process & Device modelling,Semiconductor physics, Sensors, Electromechanicaldevices, Microsystems, Optoelectronics, Photovoltaicdevices, New materials and applications, Materials sci-ence and technology, Materials & DevicesCharacterization, Reliability and failure analysis,Education in the field of microelectronics, devices andmaterials.

Workshop on MEMS and NEMS - Topics:Basic effects, New devices, Design, Technologies,Characterization, Applications.

UK:News from the Chapter:Industry Day, September 21

Following on from the successful commercial eventheld in Swindon in 2004. IMAPS-UK is holding a simi-lar event at Bristol this year on September 21st. Thiswill be an informal table-top exhibition offering a lowcost chance to freely network together.

Anyone interested in participating as an exhibitor orattendee should contact the secretariat – office @imaps.org.uk.

Business/Trade/Industry News:Thinking positive

Electronics-based equipment is worth $1200bnworldwide and has been growing steadily at 8% annu-ally creating electronics and electronic componentswhich typically account for 20% of product, in somecases much more. The UK electronics output ranks sev-enth in the world and contributes more than 2% ofGDP equating to a revenue of £37bn. These findingsfrom the recent Electronics Innovation and GrowthTeam (EIGT) are all part of a drive to make the UKindustry compete on a world stage with a number ofcooperative know-how and market alliances such asthe trade association Intellect for the UK IT,Telecommunications and Electronics Industries.Electronic component price reduction slowed down inthe fourth quarter of 2005 to 2.2% compared to 4.7% inthe first quarter, implying that demand is rising. Zetexrecently suggested that the market for LEDs in 2015will be bigger than for DRAMs resulting in a huge mar-ket for LED driver ICs.

Clearspeed Technology, which saw a 78% increase inturnover last year to £439K, sees a growing demand forhigh performance computers outside government andacademic labs giving aerospace, automotive, energy,and life sciences as examples. A survey by the Office ofScience and Technology (OST) found that the UK doeswell in maximizing its returns from R&D but spendsmuch less as a proportion of its GDP – 1.8% comparedwith an average of 2.25% but produces 9% of theworld’s PhDs.

MEMS are finding more uses, a recent report sug-gesting that they improve efficiency of barcode reading,whilst established applications continue to grow.Analogue Devices, for example, ships 1 million airbagsensors each week. Laser arrays are also looking prom-ising with Intense recruiting staff after a 2005 £8mfunding. It is interesting to see how companies arediversifying as the market changes – for example designconsultant firm Plextek is now starting to manufactureits own branded products recently launching a trans-portable radar for the security market. An interestingcollaboration has been announced between MicroCircuit Engineering (MCE) and Prism Electronicsallowing them to provide high density electronicassemblies – Hybrid and PCB technologies workingtogether, that’s good.

Recent contracts announced include £200m todesign and manufacture Falcon, an air-portable com-munication network for the army by BAe Systems, giv-ing 50 times the data throughput. Finally DEKannounces the appointment of Jim Williams as generalmanager Northern Europe.

A fairly positive outlook I would say.BCW �

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Metro Meets Again!After taking several years off, the IMAPS Metro

chapter just recently held a well attended dinner meet-ing on May 3rd at the Hilton Garden Inn inRonkonkoma, NY. Newly elected chapter PresidentSteve Lehnert, along with Deirdre Kenny(Arrangements), Bob Conte (Technical Chair), MikeMcKeown (Vice President, Membership and StudentChapter coordinator) and Jim Ray (Treasurer), organ-ized the event. There were 40+ paid attendees whoenjoyed a lively happy hour, dinner and evening speak-er. See Photo Below. The talk was given by Michael

Hodgins of Epotek titled “Silver EpoxyAdhesive Joining for Lead-free Hybrid-Microelectronic and Circuit Assembly:A Technology Overview.”

A follow-up event is planned for theFall — keep your eyes open for theannouncement. If you would like tolearn more about the Metro chapter,please contact Steve Lehnert (631)345-3100 or email: slehnert@mdipow-er.com �

Indiana IMAPS/SMTA Vendor’s DayThe Indiana Chapters of IMAPS and SMTA held

their joint Vendor’s Day and Mini-Symposium on April24th at the Holiday Inn Select in Indianapolis. TheSMTA’s joint participation again in the event resulted inincreased attendance at the mini-symposium and ven-dor tables, and a more diverse technical program.National IMAPS President Jim Drehle was on hand topresent the 2006 IMAPS strategic plan, and he wasrewarded for his effort by winning one of the manydoor prizes that were donated by the Indiana IMAPSand SMTA chapters and several generous vendors.Ursula Marquez de Tino of Vitronics Soltec won thebest paper award for her presentation on Lead FreeWave Soldering, and Janet Lumpp, faculty advisor forthe University of Kentucky student chapter, won theIpod Nano grand prize. The complete list of door prize

winners, technical presentations andadditional photos can be found on thechapter web page. Many thanks toVendor’s Day Chair and Indiana IMAPSPresident Larry Wallman for organizingan outstanding event, and to EricCamden of SMTA, and Matt Walsh andRay Fairchild of IMAPS for puttingtogether an excellent list of speakersand topics at the mini-symposium.

Door prize winner Jim Drehle, pictured withIndiana IMAPS President and Vendor’s Day Chair LarryWallman, and Sara Rice of SMTA. He won a memorystick that was donated by Foresite Incorporated. �

What a wet ‘n wild time it has been here in NewEngland. Although The Holiday Inn BoxboroughWoods Conference Center was largely unscathed, epicrains and widespread flooding had a significant impacton many participants of The iMAPS New England 33rd

Annual Symposium & Exhibition. A great deal of NewEngland pluck and perseverance was demonstrated bySpeakers, Session Chairs, Exhibitors and Attendeesforced to pump water from offices and homes or travelcircuitous routes around closed streets, highways,bridges and overflowing rivers from all over the “NorthShore and New Hampshire”. The stories have beengushing-in for days.

Big Red is naturally quite comfortable in water buthe understands the challenge to landlubbers andrespects those determined individuals who went theextra nautical mile[s] in support of iMAPS NewEngland and its 33 year long tradition. Under the stew-ardship of Chapter President, Tom Marinis - DraperLaboratory and Vice-President, Mark Occhionero -Ceramics Process Systems, the confab actually tookplace with very few hitches.

Well before 7:00 am on Tuesday morning, the coffeewas hot, juice was poured and muffins were plumped.Hotel staff scurried, vacuumed and disappeared.

Registration Chair, Susan Munyon - Saint-Gobain, hadcomputers and personnel set for the usual earlyarrivals, John Blum - Advanced Materials Solutions,had the Employment Center primed and ready with abumper crop of excellent postings. Everyone waited….and worried… and looked through the glass doors… asthe relentless rain seemed to mock us. WOULD THEYCOME?

The anticipation was palpable, the tension nearlyunbearable. Would Mother Nature finally, after all thesefortuitous years, actually saturate our special day intooblivion? All waited and wondered… and paced thesoggy carpeted floor. Had we finally met defeat? Theminutes seemed to stretch into days.

But then…there was one stalwart registrant, andanother, and yet another, then a small group… and abigger group… first a trickle… then a dribble… andfinally a noticeable flow… And, they came and contin-ued to come. Then, as the pace quickened, it wasbecoming clear… we would be OK after all.Symposium 33 might be dampened but it would be asuccess.

The very high quality technical sessions were wellattended thanks to the preparation and guidance pro-vided by our new Technical Program Chair, Charles

New England Symposium Weathers theHundred-Year StormMay 17, 2006… gurgle… gurgle… glug… glug… sploosh… By Big Red

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Angel Southwest Maurice Lowery Northrop Grumman Space Technology mlowery@imaps.org 310-814-1890

California Orange Southwest William Gaines Northrop Grumman - Space Sys Div. william.gaines@ngc.com 626-812-2199

Capital Southeast John Graves The Micro-Tech Index jgraves@imaps.org 410-867-6758

Carolinas Southeast Jim W. Lawson Bourns, Inc. jwlathome@att.net 919-363-2235

Central Texas Southeast Frank J. Muscolino Austin Semiconductor fmuscolino@austinsemiconductor.com 512-531-7055

Chicago/Milwaukee North Central Andrew R. Lytis King Circuit Inc. alytis@imaps.org 630-629-7300

Florida Southeast C. Mike Newton Harris Corp., GCSD mnewton@harris.com 321-729-3748

Garden State Northeast Michael Salloum R&D Circuits, Inc. msalloum@rdcircuits.com 610-770-0700

Great Lakes North Central Brad W. Heiler Robert Bosch Corp. bheiler@imaps.org 248-848-2975

Indiana North Central Larry Wallman Hi-Tek Sales lwallman@sbcglobal.net 317-887-2564

Keystone Northeast Lee R. Levine Kulicke & Soffa Industries, Inc. llevine@kns.com 215-784-6036

Metropolitan Northeast Steven P. Lehnert Modular Devices slehnert@imaps.org 631-345-3100

New England Northeast Dr. Thomas F. Marinis Draper Laboratory tmarinis@draper.com 617-258-3479

North Texas Southeast Don R. Schuyler InterFET Corp. drskyler@interfet.com 972-238-1287

Northern California Northwest Anwar A. Mohammed EoPlex Technologies, Inc. anwar@eoplex.com 650-298-6507

Northwest Northwest Richard F. Gorton Far West Micro, Inc. r.gorton@fwmi.com 503-846-1198

Phoenix Southwest Donald Ream ASM Pacific don.ream@asmpt.com 602-437-4688

Rocky Mountain Southwest Eric D. Underwood JLR The Engineering Solutions Co. eunderwood@jlrcom.com 303-832-3149

San Diego Southwest David B. Shields Component Surfaces, Inc. dshields@componentsurfaces.com 858-776-0602

Tri-Valley Southwest Lawrence Driscoll SCTS, Inc. lmdriscoll@sbcglobal.net 818-704-9087

Viking North Central Jay Ellingboe HEI, Inc. jay_ellingboe@ieee.org 612-443-2500

Brown - Vicor. Perhaps he’s new to this chapter butCharles has held many leadership positions over theyears in our society and SMTA and his experience wasvery much in evidence. Charles’ hard-working team ofSession Chairs is to be congratulated for producingsuch an outstanding Symposium. They are:� Thermal Management Session - Dave Saums -

DS&A� MEMS & NANO Technology Session - Dr. Rita

Mohanty - Speedline Technologies� Fuel Cells Packaging Technical Session - Doug

Bokil - Namark Design� Surface Mount Technology Session - Mike Jansen -

Lucent Technologies� Advances in LTCC & Microwave Technology

Session – Chris Mosher - Barry Industries andDavid D’Ambra - DuPont Microcircuit Materials

� High Brightness LEDs Technical Session - John W.Roman - RJR Polymers

� Poster Session - Dr. Wei Han - WorcesterPolytechnic Institute

Big Red and Exhibits Chair, Harvey Smith - EMA areextremely grateful to the Exhibitors, old and new, whocame in spite of personal hardships, dire predictionsand states-of-emergency, some perhaps for more thansimple commercial reasons. Their support and spon-sorship is truly the life-blood of this convocation. Manyof these valued supporters travel by air and road fromconsiderable distance, including that “other coast”, toratify their belief in our venue. While total attendancewas down, a few creative logistics changes, includingplacement of The Poster Session in the Exhibit Hall[and perhaps the unplanned torrential downpours out-side], seemed to stimulate internal traffic, provokingnumerous positive comments. In spite of the drench-ing, spirits inside The Conference Center ran high. The

Employment Center even seemed to yield a steady flowof job seekers throughout the day.

The “New England Hold ‘Em” poker and gamblingtheme added a lot of spice to the festivities and, asanticipated, influenced the décor organized by our cre-atively juiced Arrangements Chair, Stephanie Solofra -Delta Education, as well as the Exhibitor Donated andChapter Provided Raffle Prizes. The water pounding onthe roof couldn’t dampen the spirits inside as winnerafter winner collected their bounty accompanied byhoots and hollers. Here’s a summary:

“Jack Daniels” Cowboy Hat & Poker Set, donated byRIV, Inc., was won by Kevin Kelly - NortheastElectronics.

Pair of Red Sox Tickets donated by Emerson &Cuming was won by Joe Soucy - Draper Laboratory.

Lucky Gold Coin Pendant, donated by GeibRefining, was won by Shih Hsu - FairchildSemiconductor.

Trio of Lowell Spinners Tickets, donated by EpoxyTechnology, were won by Bill O’Hearn - NYELubrications,

Joseph Michienzi - Waters Corp.Wine Gift Basket, donated by D-Tech, was won by

Dale Perry - Palomar Technologies.Pair of Red Wines, donated by Metallix, was won by

Barbara Donohue - “The Engineer Who Writes”.Pair of Red Sox Tickets, donated by Laser Process

Manufacturing, was won by Ted Kolbe - Batten &Allen.

Gourmet Food and Wine Basket, donated byConcord Technical Sales, was won by ShelleyDougherty - WPI.

Deluxe Poker Sets and Transportable Poker TableTops, provided by iMAPS New England, were won byPaul Braun - Technic, Dave Suconick - Remtec, Peter

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F R O M T H E V P O F M E M B E R S H I P

Expanding and ContractingElectronic Communications

For those who have been in this industry for sometime now, think really hard back to the early ‘80s. Nomobile phone, Internet, or email. For some, you can-not even fathom what it was like then. For others, atwinkle of nostalgia comes to mind. Spam was a sidedish for a greasy spoon breakfast. Surfing was howmany started their day in Southern California (andstill do!). And a mobile phone meant you had a long,perhaps tangled, cord to the receiver (now “handset”).Fast forward to today: we are experiencing anunprecedented explosion in the speed one can obtaininformation. Some of this information is obtained byour own doing – searching the net, sending out emailinquires, Google, etc. But were we prepared for thesometimes overwhelming barrage of unsolicited infor-mation? A great question to ponder – does the timespent on managing unsolicited information reduce ourpersonal and business productivity to the pre-Internet/email/mobile phone era? Of course it does.Think about it: how often do you start looking atemail then find yourself an hour later still doing this,likely at the expense of higher productivity tasks?How often do you search for information on the web,but find 1000 valid and relevant “hits” to chose from?How much time to do you take sifting through all theinformation? Do you need it all?

We now live in a time when the Internet hasbecome a critical information tool for most businessesand individuals. This medium has been one of the keyforces behind the rapid globalization of manyeconomies. Email is also a fast way to transfer infor-mation to multiple sources. IMAPS uses these medi-ums to communicate information to you, the member-ship. Given the deluge of information we all receive,

you can expect IMAPS to consider the above pointsand continue to strive to make electronic communica-tions as efficient as possible.

An Electronic Communications Task Force hasbeen formed to look at how IMAPS can best use thismedium to communicate to membership. BrianSchieman heads up this team with the following gen-eral objectives:

Create and implement an updated email policy forpublicizing events and sending general information.

Update the www.imaps.org website content toreflect IMAPS’ mission and stress the engagement ofour membership from Industry toSystems/Applications to Design to Materials/Processes.

Over the longer term, restructure the website inorder to help people get relevant information theyneed even quicker than you get it now.

While IMAPS communications have largely beenevent driven, you will see even more useful informa-tion as time goes on (example: Corporate MembershipNewsletter). The overall objective is to make sure thatyour overall experience in sharing information is notoverwhelming, keep the emails relevant (subject linemore descriptive), and at the end of the day help youlearn more and do your job better. Expect many of thechanges above to be implemented well before theIMAPS 2006 Symposium in San Diego this October.

IMAPS is the premier society addressing the dis-semination of technical and business information formicroelectronics and packaging. We will strive to con-tinually improve the quality of this discussion, be itelectronic, paper, or face to face. See you in San Diegoin October! �

Michael P. O’NeillVice President ofMembershipHeraeus Thick FilmDivision

Hefti - WPI, Michael Hodgin - Epoxy Technologyand Sandy Mangin - Metallix.

The Chapter’s Grand Prize “Gift Certificate toFoxwoods” went to John Roman - RJR Polymers.

Please visit the entertaining slide show, composedby Chapter Photographer, Joe Soucy - DraperLaboratory posted on the iMAPS New England website:www.imapsne.org It contains pictures from theSymposium and Exhibition.

You’ll also find a list of our sponsoring exhibitors[with their web links] and a complete technical pro-gram.

Big Red expresses sincere crustacean gratitude to thesession chairs, committee members and volunteerswho worked very hard to insure the success of thisevent and also to those soggy but determined attendeeswho braved the elements and just showed-up to partic-ipate. Thanks also to those of you around the countrywho called and e-mailed to express personal concern orsent encouraging messages while watching open-mouthed the devastation unfolding on the eveningnews. To those people who couldn’t get here, wemissed you and hope to see you next year.

Although there has been considerable damage andinconvenience around the region these past ten daysfrom the highest rain totals in 75 years along with theassociated flooding, structural undermining etc, thecost in human terms has been modest. As bad as itlooked on TV, this event was nothing like “HurricaneKatrina” or other natural disasters around the worldand we are grateful for that.

NOW, if you are feeling envious that you missed outon all this Yankee fun, plan today to attend The iMAPSNew England 34th Annual Symposium & Exhibition onMay 1, 2007. If you have an itch to present a paper,submit a poster, organize or chair a workshop, paneldiscussion or lecture session, contact Charles Brown[CBrown@vicr.com] or download The Call-For-Papersfrom the website. If you’d like to be an Exhibitor, thereis also an “EarlyBird” Registration Form posted on thewebsite. If you have strange or general questions, con-tact Harvey Smith [harveys@imapsne.org or 508-699-4767].

We look forward to seeing you all in 2007… And,oh yes, we’ll try to arrange for better weather.

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Welcome New IMAPS Members!March-April 2006

ORGANIZATIONALBoeing S&ISCACI InternationalCrane Aerospace &ElectronicsSamsung Electro-Mechanics

ANGELHollack, Harry

AUBURN UNIVERSITYHarlin, Brenda

BENELUXSwinnen, BartVancaillie, Laurent

CALIFORNIA ORANGELee, WilliamLin, Yuan-ChangSmith, CharlesSturdivant, Rick

CALIFORNIA POLYTECH-NIC STATE UNIVERSITYWright, Brian

CAN-AMGarner, LouisLiu, HongxinSmith, Greg

CAPITALBerk, WarrenBolger, JohnBridger, KeithCooke, ArthurCoppola, LuisaDash, ManasDonhowe, MarkGeil, BruceKaplan, StevenKoene, BryanLee, GeounSingh, RanbirTom, KwokVeliadis, Victor

CAROLINASAgarwal, AnantAlley, RandallBell, RussCalhoun, BrianHwang, Jin-hyunKer, HsienKim, TaeyunRyu, Sei-Hyung

CENTRAL TEXASEaton, MarkEngdorf, PaulLake, LarryPayne, MikeShelton, RogerZhou, Feng

CHICAGO/MILWAUKEEEichstadt, DaveGuimond, RussellLawson, JacobMichaelson, KimStutz, CharlesVan Dreel, Kirk

FRANCEDiaham, SombelDutarde, EmmanuelRoman, Cecile

GARDEN STATEAvery, Les

GERMANYBesendorfer, GeorgBoeke, UlrichBoettcher, LarsFricke, SorenFriedrichs, PeterKoenig, AndreasLiu, SunnyOllagnier, Jean-BaptistePartsch, UweRabe, TorstenSchimetta, GernotSchimpf, StefanSchoenborn, KaiSichting, Thomas

GREAT LAKESEdwards, Lisa

INDIANAApanius, ChrisFulford, ScottMiller, MichaelNeudeck, PhilipSayir, AliScherer, RogerShugart, JasonThompson, DaleYim, Kim

INTERNATIONALHammel, ErnstVez, Dominique

JAPANAdachi, NobuyasuEriguchi, TakeshiHatono, HironoriHigashidani, YoshihikoIijima, Takashi

Kanehira, ShingoKuriyama, HijiriMiyamoto, YoshinariNakada, MasafumiPark, JaehyukSuzuki, HisaoTakeda, JiroTsuchiya, TetsuoTsurumi, TakaakiWada, SatoshiWatari, KojiYokotsuka, Shunsuke

KEYSTONEBuzby, DeanFanton, MarkSarraf, DavidTomko, Paul

KOREACho, Yong SooPaek, Yeong-KyeunSeo, Yong Jun

MALAYSIAChong, David

METROPOLITANDotsenko, VladimirGrande, WilliamKenny, DeirdreLaine, EricOanca, CristinaSchulte, MichaelSlotnick, JeffreyTankiewicz, SzymonYoung, Albert

NEW ENGLANDCasey, LeoDavis, GreggDelfosse, DuaneHague, DonKoch, VictorPierce, BrianTulpule, BhalWoodnorth, Douglas

NO CHAPTER AFFILIATIONLuppino, Gerard

NO CHAPTER AFFILIATION PACIFICNORTHWESTFurlan, RogerioJaques, BrianMcCrink, MatthewMoeller, KoreyScherrer, SarahWeston, HopeYoungsman, John

NO CHAPTER AFFILIA-TION SOUTHEASTBadam, UshaCheng, LinCilio, EdgarHutchens, ChriswellIslam, SyedLiu, Chia-MingMadhurauasal, VijayMorris, StevenOzpineci, BurakSoo, SjooiSubramanian, KarthikTolbert, LeonWang, Jianning

NO CHAPTER AFFILIA-TION SOUTHWESTCaja, Josip

NORDICJohannessen, RolfVagle, Oddbjorn

NORTH TEXASBeall, JohnLee, WooHoLewis, BasilWeber, B J

NORTHERN CALIFORNIAAubuchon, ChristopherAzevedo, RobertDoki, KatsujiErgas, FranckKalberer, MartinLee, BillNovotny, VladShin, SteveSmith, DeanSpiteri, StephenThomas, Mammen

NORTHWESTBrockschmidt, ArtMehdi, IshaqueRatliff, Brian

PHOENIXAtcitty, StanCesarano, JoeCui, BentaoFlint, JasonGupta, VishuHahn, ChrisJakaboski, BlakeKnudsen, StevenMcCombs, GregoryMiller, RonNormann, RandyPrack, EdSadwick, LarryShell, DonTran, Son

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Wahlquist, DavidWroblewski, BrianZipperian, Thomas

ROCKY MOUNTAINJohnson, ZaThalman, Gary

SAN DIEGOBegg, LesterLumori, Mikaya

TAIWANPu, Jui-ChenWang, Sea-FueWang, Timothy

TRI-VALLEYBalint, TiborBoughrum, RobertChen, YuanDuva, Frank

Kolawa, ElizabethMaxwell, JohnPrice, TimSentz, ScottSimental, VisenteSvitek, Tomas

UNITED KINGDOMArmstrong, JoeBiddulph, GrahamBlackwood, CharlesBracher, MikeCooper, Timde Gourcuff, ErwanFreer, JohnHall, DenisHesen, PHopgood, IanJohnson, MarkJohnston, ColinLi, JianfengLong, Angela

Lowbridge, PaulLynch, MichelleMuttor, TimonNowak, KrzysztofOksefsell, GunnarPonting, MauricePook, SteveShield, IanShrimpling, PeterSmith, IanStobie, GaryStraub, PeterTim, MelinyVarrazza, RiccardoWinks, Stuart

UNIVERSITY OFARKANSASKodeboina, Prabhu

UNIVERSITY OF BUFFALOLi, Shidong

VIKINGBlankenheim, SueBlock, SteveClark, RodDabiran, AmirKing, KennethNagarajan, RajeshRidley, JeffSears, JamesYunan, James

WORCESTER POLYTECHNIC INSTITUTEGupta, Anju

First Time Membership Renewals...Thank You for Your Support!March/April 2006

We appreciate and know the importance of our members’ continued support of IMAPS and the microelectronics and packaging industries. Ourmembers’ participation has enabled IMAPS to bring leading technical programs, workshops, courses, and symposia into the forefront of the indus-try and throughout the world. It is this consistent support that has helped IMAPS achieve its position as the world’s largest electronic packagingsociety. IMAPS member support increases the value of the society to the microelectronics industry and increases the value of the society to youand your fellow IMAPS members. Therefore, we have devoted this section to recognizing those individuals who have renewed their support toIMAPS for the first time, as they join us in advancing and expanding the use of microelectronics through the dissemination of information and thepromotion of the values of the technology.

ORGANIZATIONALnScrypt, Inc.

CHICAGO/MILWAUKEESmith, Guy

MALAYSIACheang, Soon Yee

NEW ENGLANDGarcia, ThomasHarvey, RoyMichienzi, JosephOnorato, Paulette I.Silva, Steven

NORTHERN CALIFORNIAPatel, KamleshWhite, Chuck

PHOENIXMundt, Ronald

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Fotofab3758 W. BelmontChicago, IL 60618Tel: 773-463-6211Fax: 773-463-3387www.fotofab.com

Mundt & Associates, Inc.14682 N. 74th Street #150Scottsdale, AZ 85260Tel: 480-922-9365Fax: 480-922-9341www.mundtinc.com

Questech Services, Inc.2201 Executive DriveGarland, TX 75041Tel: 972-278-8006Fax: 972-278-8036www.questlaser.com

Stellar Industries50 Howe AvenueMillbury, MA 01527Tel: 508-865-1668Fax: 508-865-5016www.stellarind.com

Trebor Instrument39 Sarah DriveE. Farmingdale, NY 11735Tel: 631-293-8127Fax: 631-293-2065

ATV Technology21 Concord StreetN. Reading, MA 01864Tel: 978-664-1948Fax: 978-664-4819www.atv-tech.com

Centrotherm Technologies250 North StreetUnit 8ADanvers, MA 01923-1206Tel: 978-777-9859Fax: 978-774-5413www.centrothermtech.com

Harrop Industries, Inc.3470 E. 5th Ave.Columbus, OH 43219-1797Tel: 614-231-3621Fax: 614-235-3699www.ajcarstencompany.com

Midas Technology, Inc.400 W. Cummings Pk.Suite 6400Woburn, MA 01801-6533Tel: 781-938-0069Fax: 781-938-0160www.midastechnology.com

Polaris Electronics Corp.630 S. Rogers RoadOlathe, KS 66061Tel: 913-764-5210Fax: 913-764-5045www.polariselectronics.com

Reactive Nano Technologies(RNT)111 Lake Front Dr.Hunt Valley, MD 21030Tel: 410-771-9801Fax: 410-771-0586www.rntfoil.com

SST International9801 Everest StreetDowney, CA 90242Tel: 562-803-3361Fax: 562-803-4043www.sstinternational.com

Machining - Trimming and Scribing Non-laser

Reflow Equipment

Screen Printers, Screens and StencilsAffiliated Manufacturers, Inc.3087 US Highway 22P.O. Box 5049North Branch, NJ 08876Tel: 908-722-7100Fax: 908-722-5082www.ami-presco.com

C.W. Price Co., Inc.2 Industrial Park, Suite 2Alpha, NJ 08865Tel: 908-387-6700Fax: 908-387-6701

CommonwealthMicrotechnologies1004 DuPont RodMartinsville, VA 24112Tel: 276-638-3500Fax: 276-638-3568

Cookson Electronics AssemblyMaterials600 Route 440Jersey City, NJ 07034Tel: 201-324-3659Fax: 201-434-6548www.alphametals.com

Dynamesh, Inc.1555 W. Hawthorne #4EWest Chicago, IL 60185Tel: 630-293-5454Fax: 630-293-5647www.dynamesh.com

Haiku Tech1669 NW 79 Ave.Miami, FL 33126Tel: 305-463-9304Fax: 305-463-8751www.haikutech.com

Harrop Industries, Inc.3470 E. 5th Ave.Columbus, OH 43219-1797Tel: 614-231-3621Fax: 614-235-3699www.ajcarstencompany.com

MicroScreen LLC1106 South High StreetSouth Bend, IN 46601Tel: 574-232-4358Fax: 574-234-7496www.microscreen.org

Riv, Inc.25 Columbia CircleP.O. Box 220Merrimack, NH 03054-4163Tel: 603-424-0510Fax: 603-424-3260www.rivinc.com

SEFAR Printing Solutions, Inc.120 Mount Holly By-PassPO Box 679Lumberton, NJ 08048Tel: 609-613-5034Fax: 609-267-1750www.microcircuit.com

Tecan Ltd.Tecan Way Granby Industrial EstateWeymouth, Dorset DT4 9TU, UK Tel: 44 1305 765432Fax: +44 1305 780194www.tecan.co.uk

Aeroflex4350 Centennial Blvd.Colorado Springs, CO 80907Tel: 719-594-8035Fax: 719-594-8468www.aeroflex.com

Central Semiconductor Corp.145 Adams Ave.Hauppauge, NY 11788Tel: 631-435-1110Fax: 631-435-1824www.centralsemi.com

Chip Supply, Inc.7725 North Orange Blossom Trl.Orlando, FL 32810Tel: 407-298-7100Fax: 407-290-0164www.chipsupply.com

ES Components, Inc.108 Pratts Junction Rd.Sterling, MA 01564Tel: 978-422-3327Fax: 978-422-0011www.escomponents.com

F&K Delvotec, Inc.27182 Burbank St.Foothill Ranch, CA 92610Tel: 949-595-2200Fax: 949-595-2207www.fkdelvotecusa.com

Interconnect Systems, Inc.4515 Carlyle Ct., #3205Santa Clara, CA 95054Tel: 408-496-6765Fax: 805-482-8470

Micropac Industries, Inc.905 East Walnut StreetPO Box 469017Garland, TX 75040Tel: 972-272-3571Fax: 972-487-6885www.micropac.com

Micross Components Corp.22 Just RoadFairfield, NJ 07004Tel: 973-227-8007Fax: 973-227-4766www.micross.com

Minco Tehnology Labs.1805 Rutherford LaneAustin, TX 78754Tel: 512-339-3421Fax: 512-837-6285www.mincotech.com

North Penn Tehnology2294 North Penn Rd.Hatfied, PA 19440Tel: 215-997-3200Fax: 215-997-2966

Semi Dice, Inc.10961 Bloomfield St.P.O. Box 3002Los Alamitos, CA 90720Tel: 562-594-4631Fax: 562-594-6475www.semidice.com

Solid State Cooling Systems20 Pleasant View RoadPleasant Valley, NY 12569Tel: 845-635-5500Fax: 845-635-8081www.sscoooling.com

Surface Technology SystemsImperial Park - Imperial Way CityNewportGwent NP10 8UJ, UK Tel: +11633652400Fax: +11633652405

Yield Engineering2119 Oakland RdSan Jose, CA 95131Tel: 408-954-8353Fax: 408-954-8369www.yieldengineering.com

Semiconductors - Distributors and Manufacturers

In each issue until the end of 2006,we will print a portion of our IMAPS 2005 Final Program Products and Services. These categories willbe listed in alphabetical order.This will give IMAPS members another chance to identify and contact IMAPS member companies with productsor services of interest.

41

P R O D U C T S & S E R V I C E S

J U LY / A U G U S T

2006

Solder - Pastes and CreamsCoining of America280 Midland AvenueSaddle Brook, NJ 07663Tel: 201-791-4020Fax: 201-791-1637www.coiningllc.com

Cookson Electronics AssemblyMaterials600 Route 440Jersey City, NJ 07034Tel: 201-324-3659Fax: 201-434-6548www.alphametals.com

Heraeus SMT24 Union Hill RoadWest Conshohocken, PA 19428Tel: 610-825-6050Fax: 610-825-7061ww.4cmd.com

Indium Corp. of America1676 Lincoln Ave.P.O. Box 269Utica, NY 13503Tel: 315- 831-7541Fax: 315- 853-1000www.indium.com

Kester515 East Touhy AvenueDes Plaines, IL 60018-2675Tel: 847-297-1600Fax: 847-390-9338www.kester.com

Questech Services, Inc.2201 Executive DriveGarland, TX 75041Tel: 972-278-8006Fax: 972-278-8036www.questlaser.com

Reactive Nano Technologies(RNT)111 Lake Front Dr.Hunt Valley, MD 21030Tel: 410-771-9801Fax: 410-771-0586www.rntfoil.com

Substrates - Shapes3M CompanyBldg A1 30-3N-116801 River Place Blvd.Austin, TX 78726Tel: 512-984-5345Fax: 512-984-6596

ALLVIA, Inc.657 N. Pastoria Ave.Sunnyvalle, CA 94085Tel: 408-212-3217Fax: 408-212-3208

American Technical CeramicsOne Norden LaneHuntington Station, NY 11746-2142Tel: 631-622-4700Fax: 631-622-4748www.atceramics.com

Anaren Ceramics, Inc.6635 Kirkville RoadEast Syracuse, NY 13057Tel: 315-432-8909Fax: 315-432-0189www.anaren.com

Brush Ceramic Products6100 S. Tucson Blvd.Tucson, AZ 85706Tel: 520-741-3407Fax: 520-294-8906www.brushwellman.com

CeramTec North AmericaOne Technology PlaceLaurens, SC 29360-0098Tel: 518-794-4102Fax: 864-682-1140www.ceramtec.com

CommonwealthMicrotechnologies1004 DuPont RodMartinsville, VA 24112Tel: 276-638-3500Fax: 276-638-3568

Curamik Electronics, Inc.3770 Arapaho Rd.Addison, TX 75001Tel: 214-615-1533Fax: 214-615-1540www.curamik.com

Kyocera America, Inc.8611 Balboa Ave.San Diego, CA 92123Tel: 858-576-2793Fax: 858-569-9412www.kyocera.com/kai/semiparts

M/A-COM1011 Pawtucket BlvdLowell, MA 01853Tel: 978-387-5856Fax: 978-442-4261www.macom.com

MicroConnex Corp.34935 S.E. Douglas St.Snoqualmie, WA 98065Tel: 425-396-5707Fax: 425-396-5861www.microconnex.com

Questech Services, Inc.2201 Executive DriveGarland, TX 75041Tel: 972-278-8006Fax: 972-278-8036www.questlaser.com

Saint-Gobain Adv. Ceramics2050 Cory RoadSanborn, NY 14132Tel: 716-731-9242Fax: 716-731-9257www.hithermaln.com

Sonic MillThe Bell Group7500 Blue Water Rd. NWAlbuquerque, NM 87121Tel: 505-839-3528Fax: 505-839-3525www.sonicmill.com

Stellar Industries50 Howe AvenueMillbury, MA 01527Tel: 508-865-1668Fax: 508-865-5016www.stellarind.com

UltraSource, Inc.22 Clinton Dr.Hollis, NH 03049Tel: 603-881-7799Fax: 603-881-9966www.ultra-source.com

Surface Mount/Hybrid ComponentsALLVIA, Inc.657 N. Pastoria Ave.Sunnyvalle, CA 94085Tel: 408-212-3217Fax: 408-212-3208

American Technical CeramicsOne Norden LaneHuntington Station, NY 11746-2142Tel: 631-622-4700Fax: 631-622-4748www.atceramics.com

Anaren Ceramics, Inc.6635 Kirkville RoadEast Syracuse, NY 13057Tel: 315-432-8909Fax: 315-432-0189www.anaren.com

BI Technologies4200 Bonita PlaceFullerton, CA 92835Tel: 714-447-2518Fax: 714-388-0046www.bitechnologies.com

Coining of America280 Midland AvenueSaddle Brook, NJ 07663Tel: 201-791-4020Fax: 201-791-1637www.coiningllc.com

Datacon Technology AGSeven NeshaminySuite 116Trevose, PA 19053Tel: 215-245-3050Fax: 215-245-3060www.datacon.at

ES Components, Inc.108 Pratts Junction Rd.Sterling, MA 01564Tel: 978-422-3327Fax: 978-422-0011www.escomponents.com

F&K Delvotec, Inc.27182 Burbank St.Foothill Ranch, CA 92610Tel: 949-595-2200Fax: 949-595-2207www.fkdelvotecusa.com

Kyocera America, Inc.8611 Balboa Ave.San Diego, CA 92123Tel: 858-576-2793Fax: 858-569-9412www.kyocera.com/kai/semiparts

Maxtek Components Corp.2905 SW HockenBeaverton, OR 97075-0428Tel: 503-627-4521Fax: 503-627-4651www.maxtek.com

Micro Hybrid Dimensions2161 E 5th StTempe, AZ 85281-3035Tel: 480-731-3131Fax: 480-784-1604www.micro-hybrid.com

Micropac Industries, Inc.905 East Walnut StreetPO Box 469017Garland, TX 75040Tel: 972-272-3571Fax: 972-487-6885www.micropac.com

Micross Components Corp.22 Just RoadFairfield, NJ 07004Tel: 973-227-8007Fax: 973-227-4766www.micross.com

Mini-Systems, Inc.Thick Film Division20 David Rd. P.O. Box 69N. Attleboro, MA 02761-0069Tel: 508-695-0203Fax: 508-695-6076www.mini-systems.biz

North Penn Tehnology2294 North Penn Rd.Hatfied, PA 19440Tel: 215-997-3200Fax: 215-997-2966

Northeast Electronics Corp.455 Bic DriveMilford, CT 06460Tel: 203-878-3511Fax: 203-877-5694www.northeast.com

Polaris Electronics Corp.630 S. Rogers RoadOlathe, KS 66061Tel: 913-764-5210Fax: 913-764-5045www.polariselectronics.com

Questech Services, Inc.2201 Executive DriveGarland, TX 75041Tel: 972-278-8006Fax: 972-278-8036www.questlaser.com

Tecan Ltd.Tecan Way Granby IndustrialEstateWeymouth, Dorset DT4 9TU,UK Tel: 44 1305 765432Fax: +44 1305 780194www.tecan.co.uk

UltraSource, Inc.22 Clinton Dr.Hollis, NH 03049Tel: 603-881-7799Fax: 603-881-9966www.ultra-source.com

P R O D U C T S & S E R V I C E S

42

A D V A N C I N G

MICROELECTRONICS

Test Equipment - Probes, Probe Cards and Die Sorting Equipment

Anter Corp.

1700 Universal Road

Pittsburgh, PA 15235-3998

Tel: 412-795-6410

Fax: 412-795-8225

www.anter.com

ATV Technology

21 Concord Street

N. Reading, MA 01864

Tel: 978-664-1948

Fax: 978-664-4819

www.atv-tech.com

ESI (Electro Scientific Industries)

PO Box 91148

Portland, OR 97291

Tel: 503-672-5720

Fax: 503-671-5468

www.esi.com

F&K Delvotec, Inc.

27182 Burbank St.

Foothill Ranch, CA 92610

Tel: 949-595-2200

Fax: 949-595-2207

www.fkdelvotecusa.com

Imaging Technology

International Corp.

8401 Baseline Road

Boulder, CO 30303

Tel: 303-443-1036

Fax: 303-443-6191

SUSS MicroTec

228 Suss Drive, Route 100

Waterbury Center, VT 05677

Tel: 802-244-5181

Fax: 802-244-5103

www.suss.com

Trebor Instrument

39 Sarah Drive

E. Farmingdale, NY 11735

Tel: 631-293-8127

Fax: 631-293-2065

W.M. Hague Company

16 Lomar Park, #8

Pepperell, MA 01463

Tel: 978-433-3777

Fax: 978-433-3690

www.wmhague.com

West Bond

1551 Gene Autry Way

Anaheim, CA 92805

Tel: 714-978-1551

Fax: 714-978-0431

www.westbond.com

Thick and/or Thin Film Materials - Precious Metals and Polymers

ALLVIA, Inc.

657 N. Pastoria Ave.

Sunnyvall, CA 94085

Tel: 408-212-3217

Fax: 408-212-3208

American Technical Ceramics

One Norden Lane

Huntington Station, NY 11746-

2142

Tel: 631-622-4700

Fax: 631-622-4748

www.atceramics.com

Barry Industries

60 Walton St

Attleboro, MA 02703

Tel: 508-226-3350

Fax: 508-226-3317

www.barryind.com

Coining of America

280 Midland Avenue

Saddle Brook, NJ 07663

Tel: 201-791-4020

Fax: 201-791-1637

www.coiningllc.com

Commonwealth

Microtechnologies

1004 DuPont Rod

Martinsville, VA 24112

Tel: 276-638-3500

Fax: 276-638-3568

Epoxy Technology, Inc.

14 Fortune Dr.

Billerica, MA 01821-3972

Tel: 978-667-3805

Fax: 978-663-9782

www.epotek.com

ESL Electro-Science

416 East Church Road

King of Prussia, PA 19406-2625

Tel: 610-272-8000

Fax: 610-272-6759

www.ElectroScience.com

Ferro EMS

1395 Aspen Way

Vista, CA 92083

Tel: 760-305-1000

Fax: 760-305-1112

www.ferro.com

Gelest, Inc.

11 E Steel Rd.

Morrisville, PA 19067-2605

Tel: 215-547-1015

Fax: 215-547-2484

www.gelest.com

Heraeus CMD

24 Union Hill Road

West Conshohocken, PA 19428

Tel: 610-825-6050

Fax: 610-825-7061

www.4cmd.com

Kester

515 East Touhy Avenue

Des Plaines, IL 60018-2675

Tel: 847-297-1600

Fax: 847-390-9338

www.kester.com

Kyocera America, Inc.

8611 Balboa Ave.

San Diego, CA 92123

Tel: 858-576-2793

Fax: 858-569-9412

www.kyocera.com/kai/semiparts

Micro Hybrid Dimensions

2161 E 5th St

Tempe, AZ 85281-3035

Tel: 480-731-3131

Fax: 480-784-1604

www.micro-hybrid.com

NAMICS Technologies, Inc.

5201 Great America Pkwy.

#272

Santa Clara, CA 95054

Tel: 408-907-8430

Fax: 408-907-8431

www.namics.co.jp

Polysciences, Inc.

400 Valley Road

Warrington, PA 18976

Tel: 215-343-6484

Fax:

Questech Services, Inc.

2201 Executive Drive

Garland, TX 75041

Tel: 972-278-8006

Fax: 972-278-8036

www.questlaser.com

Reldan Metals, Inc.

396-402 Whitehead Ave.

South River, NJ 08882

Tel: 800-764-9222

Fax: 732-238-8595

www.reldanmetals.com

Surface Technology Systems

Imperial Park - Imperial Way

City Newport

Gwent NP10 8UJ, UK

Tel: +11633652400

Fax: +11633652405

Technic, Inc.

300 Park East Drive

Woonsocket, RI 02895

Tel: 401-769-7000

Fax: 401-769-2472

www.technic.com

Thinky Corp.

101-0025 Sakuma-cho

Kanda Chiyoda-ku

Tokyo 101-0025, Japan

Tel: 770-919-2850

Fax: 678-623-3563

www.thinky.co.jp/english

UltraSource, Inc.

22 Clinton Dr.

Hollis, NH 03049

Tel: 603-881-7799

Fax: 603-881-9966

www.ultra-source.com

P R O D U C T S & S E R V I C E S

43

J U LY / A U G U S T

2006

Other Products & Services

Affiliated Manufacturers, Inc.

3087 US Highway 22

P.O. Box 5049

North Branch, NJ 08876

Tel: 908-722-7100

Fax: 908-722-5082

www.ami-presco.com

CAD Design Software, Inc.

15055 Los Gatos Blvd

Ste. 300

Los Gatos, CA 95032-2020

Tel: 408-358-3305

Fax: 408-358-3765

www.cad-design.com

CeramTec North America

One Technology Place

Laurens, SC 29360-0098

Tel: 518-794-4102

Fax: 864-682-1140

www.ceramtec.com

Coining of America

280 Midland Avenue

Saddle Brook, NJ 07663

Tel: 201-791-4020

Fax: 201-791-1637

www.coiningllc.com

Commonwealth

Microtechnologies

1004 DuPont Rod

Martinsville, VA 24112

Tel: 276-638-3500

Fax: 276-638-3568

Datacon Technology AG

Seven Neshaminy

Suite 116

Trevose, PA 19053

Tel: 215-245-3050

Fax: 215-245-3060

www.datacon.at

Electro-Comp Tape & Reel

Services

14190 63rd Way

Clearwater, FL 33760

Tel: 727-532-4262

Fax: 727-532-4122

ESL Electro-Science

416 East Church Road

King of Prussia, PA 19406-2625

Tel: 610-272-8000

Fax: 610-272-6759

www.ElectroScience.com

First Level, Inc.

3109 Espresso Way

York, PA 17402

Tel: 717-266-2450

Fax: 717-266-7410

www.firstlevelinc.com

Flow Autoclave Systems, Inc.

3721 Corporate Drive

Columbus, OH 43231

Tel: 614-891-2732

Fax: 614-891-4568

www.flowae.com

Gannon & Scott

33 Kenney Drive

Cranston, RI 02920

Tel: 800-556-7296

Fax: 401-463-5971

www.gannon-scott.com

Geib Refining Corp.

399 Kilvert St.

Warwick, RI 02886

Tel: 800-228-4653

Fax: 401-732-2841

www.geibrefining.com

GlacialTech, Inc.

9F1, No. 352 Sec. 2 Jun Shan

Rd.

Jung He City, Taipei 235, Taiwan

Tel: +886-222441227

Fax: +886222441228

HED International

PO Box 246, 449 Rt. 31

Ringoes, NJ 08551

Tel: 609-466-1900

Fax: 609-466-3608

www.hed.com

Imaging Technology International

Corp.

8401 Baseline Road

Boulder, CO 30303

Tel: 303-443-1036

Fax: 303-443-6191

Indium Corp. of America

1676 Lincoln Ave.

P.O. Box 269

Utica, NY 13503

Tel: 315- 831-7541

Fax: 315- 853-1000

www.indium.com

ITT Industries - Microelectronics

Center

7670 Enon Dr.

Roanoke, VA 24019

Tel: 540-777-5600

Fax: 549-777-5601

www.ittmec.com

Kester

515 East Touhy Avenue

Des Plaines, IL 60018-2675

Tel: 847-297-1600

Fax: 847-390-9338

www.kester.com

Kyocera America, Inc.

8611 Balboa Ave.

San Diego, CA 92123

Tel: 858-576-2793

Fax: 858-569-9412

www.kyocera.com/kai/semiparts

Kyzen Corp.

430 Harding Industrial Dr.

Nashville, TN 97211

Tel: 800-845-5524

Fax: 615-831-0888

www.kyzen.com

Litron

207 Bowles Rd.

Agawam, MA 01001

Tel: 413-789-0700

Fax: 413-789-0796

www.litron.com

Maxtek Components Corp.

2905 SW Hocken

Beaverton, OR 97075-0428

Tel: 503-627-4521

Fax: 503-627-4651

www.maxtek.com

Metallix, Inc.

64-C Bridge Ave.

Red Bank, NJ 07701-1160

Tel: 732-936-0050

Fax: 732-936-0029

www.metallixrefining.com

MicroScreen LLC

1106 South High Street

South Bend, IN 46601

Tel: 574-232-4358

Fax: 574-234-7496

www.microscreen.org

Natel Engineering Co., Inc.

9340 Owensmouth Ave.

Chatsworth, CA 91311-6915

Tel: 818-734-6500

Fax: 818-734-6530

www.natelengr.com

Nextreme Thermal Sales

3040 Cornwallis Road

PO Box 13981

Research Triangle Park, NC

27709-3981

Tel: 919-485-2774

Fax: 919-485-2600

Northeast Electronics Corp.

455 Bic Drive

Milford, CT 06460

Tel: 203-878-3511

Fax: 203-877-5694

www.northeast.com

Pac Tech USA

328 Martin Ave

Santa Clara, CA 95050

Tel: 408-588-1925

Fax: 408-588-1927

www.pactech-usa.com

Perfection Products

1320 Indianapolis Ave.

Lebanon, IN 46052

Tel: 765-482-7786

Fax: 765-482-7792

www.perfection-products.com

Questech Services, Inc.

2201 Executive Drive

Garland, TX 75041

Tel: 972-278-8006

Fax: 972-278-8036

www.questlaser.com

Reinhardt Microtech AG

Aeulistrasse 10

7323 Wangs, Switzerland

Tel: +41-81-720-04-56

Fax: +41-81-720-0450

www.reinhardt-microtech.ch

Reldan Metals, Inc.

396-402 Whitehead Ave.

South River, NJ 08882

Tel: 800-764-9222

Fax: 732-238-8595

www.reldanmetals.com

Silicon Cert

4201 Pottsville Rd.

Reading, PA 19605

Tel: 610-939-9500

Fax: 610-939-1010

www.siliconcert.com

Solid State Cooling Systems

20 Pleasant View Road

Pleasant Valley, NY 12569

Tel: 845-635-5500

Fax: 845-635-8081

www.sscoooling.com

Sonic Mill

The Bell Group

7500 Blue Water Rd. NW

Albuquerque, NM 87121

Tel: 505-839-3528

Fax: 505-839-3525

www.sonicmill.com

Sonoscan

2149 E. Pratt Boulevard

Elk Grove Village, IL 60007-5914

Tel: 847-437-6400

Fax: 847-437-1550

www.sonoscan.com

Stellar Industries

50 Howe Avenue

Millbury, MA 01527

Tel: 508-865-1668

Fax: 508-865-5016

www.stellarind.com

Surface Technology Systems

Imperial Park - Imperial Way City

Newport

Gwent NP10 8UJ, UK

Tel: +11633652400

Fax: +11633652405

Sypris Test & Measurement

6120 Hanging Moss Rd.

Orlando, FL 32807

Tel: 800-775-2550

Fax: 407-678-0578

www.wetest.com

Thermacore, Inc.

780 Eden Road

Lancaster, PA 17601

Tel: 717-519-5804

Fax: 717 569 8424

Thinfilms, Inc.

1 Margaret Place

East Brunswick, NJ 08816

Tel: 908-359-7014

Fax: 908-359-7015

Thinky Corp.

101-0025 Sakuma-cho

Kanda Chiyoda-ku

Tokyo 101-0025, Japan

Tel: 770-919-2850

Fax: 678-623-3563

www.thinky.co.jp/english

Trebor Instrument

39 Sarah Drive

E. Farmingdale, NY 11735

Tel: 631-293-8127

Fax: 631-293-2065

United Recycling

3700 North Runge

Franklin Park, IL 60131

Tel: 847-455-8800

Fax: 847-455-3232

www.unitedrecycling,con **

Viox Corp.

6701 Sixth Avenue South

Seattle, WA 98108

Tel: 206-763-2170

Fax: 206-763-2577

www.viox.com

W.M. Hague Company

16 Lomar Park, #8

Pepperell, MA 01463

Tel: 978-433-3777

Fax: 978-433-3690

www.wmhague.com

44

A D V A N C I N G

MICROELECTRONICS

IMAPS’ Ad Hotline is provided as a courtesy to our advertisers and readers. Although every attempt is made to ensure accuracy, theinformation contained herein cannot be guaranteed.

ADVERTISER CONTACT TELEPHONE EMAIL WEBSITE PAGE

AdTech Ceramics Brian Bukovitz 423-755-5510 bbukovitz@adtechceramics.com www.adtechceramics.com 14

Indium Corp. of America Rick Short 315--381-7554 rshort@indium.com www.indium.com 9, 11, 13

Laser Processing Technology, Inc. Connie L. Callow 503-254-2761 c.callow@laserprocessingtech.com www.laserprocessingtech.com 7

Mini-Systems, Inc. Darryl Moody 508-695-0203 dmoody@mini-systemsinc.com www.mini-systemsinc.com 24

Sikama International, Inc. Al Bonzer 805-962-1000 sales@sikama.com www.sikama.com 39

Torrey Hills Technologies, LLC Ken Kuang 858-722-4805 kkuang@torreyhillstech.com www.torreyhillstech.com 5

A D V E R T I S E R H O T L I N E

WHO TO CALL

Michael O’Donoghue, Executive Director, (202) 548-8707, modonoghue@imaps.org, Strategic Planning, Contracts andNegotiations, Legal Issues, Policy Development, Intersociety Liaisons, Customer Complaints

Brian Schieman, Director, Program Development and Technology, (202) 548-8715, bschieman@imaps.org, Development of Society Programs, Website Development, Database Management, Communication Tools and otherTechnology

Ann Bell, Manager, Marketing & Communications, (202) 548-8717, abell@imaps.org, Public Relations, Marketing,Fundraising, Advertising, Exhibits, Advancing Microelectronics

Rayma Gollopp, Membership Manager, (202) 548-8711, rgollopp@imaps.org, Member Relations and ServicesAdministration, Dues Processing, Membership Invoicing, Foundation Contributions, Data Entry, Mail Processing, AddressChanges, Telephone SupportRick Mohn, Operations Manager, (202) 548-8703, rmohn@imaps.org, Financial Management, Accounts Payable, Accounts Receivable, Human Resources, Employee Benefits, Budget Issues, Business Services, FacilitiesManagement, Publications Sales

Jackki Morris-Joyner, Technical Program Manager, (305) 382-8433, jmorris@imaps.org, Technical Program Developmentand Coordination, ATWs, PDCs, Calls for Papers, Speaker Communications, Proceedings Publication, Event Program Activities

Elizabeth Keller, Meetings Coordinator, (202) 548-8716, ekeller@imaps.org

I M A P S H E A D Q U A R T E R S

...contactIMAPSHeadquarters See staff listing for specificprogram areas.

2006C A L E N D A R O F E V E N T S

8-26-06 8-30-06 ICEPT 2006: 7th International Conference on Electronics Packaging TechnologyShanghai, China IMAPS China shengliu63@yahoo.com

9-10-06 9-13-06 ATW on Thermal Management 2006Palo Alto, CA IMAPS imaps@imaps.org

9-13-06 9-15-06 ATW on Packaging and Assembly of Power LEDs 2006Palo Alto, CA IMAPS imaps@imaps.org

9-17-06 9-20-06 IMAPS Nordic Annual ConferenceGothenburg, Sweden IMAPS Nordic info@imapsnordic.org

9-24-06 9-27-06 30th IMAPS Poland International ConferenceCracow, Poland IMAPS Poland imaps@imaps.org.pl

9-26-06 9-29-06 INTERCONEX 2006 - IMAPS FranceBesançon, France IMAPS France imaps.france@imapsfrance.org

10-8-06 10-12-06 IMAPS 2006San Diego, CA IMAPS imaps@imaps.org

2-26-07 2-28-07 2nd ATW on Reliability of Advanced Electronic Packages and Devices in EXTREME COLD EnvironmentsArcadia, CA IMAPS imaps@imaps.org

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AUGUST

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