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ACTINIC MASK IMAGING: TAKING A SHARP LOOK AT NEXT GENERATION PHOTOMASKS
Semiconductor High-NA actinic Reticle Review Project
Markus Benk, Antoine Wojdyla, Ken Goldberg, Patrick Naulleau
2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, the Netherlands, October 6
2Overview
Source: Synchrotron
Optics: Zoneplate lenses
4×NA: 0.25–0.625
Sigma: Programmable
Navigation: Full-mask XY
Throughput: ~8 series/hour
2015 EUVL Symposium, Maastricht
3Introduction
Mangat, PMJ 2015
500 nm
Mask SEM Wafer SEMSHARP aerial image
2015 EUVL Symposium, Maastricht
4
Results
Bright field image Zernike Phase Contrast
Complementary imaging modes 1 µm
Introduction 2015 EUVL Symposium, Maastricht
5
Through-focus, Δ z= 400 nm Complex amplitude200 nm
Mochi, SPIE 79691X (2011)
Phase reconstruction, modified Gerchberg-Saxton Algorithm
Through-focus, Δ z= 400 nm Complex amplitude
Introduction 2015 EUVL Symposium, Maastricht
6
Fourier Ptychography Microscopy
synthesized NA
Pupil plane Complex amplitude
1µm
Introduction 2015 EUVL Symposium, Maastricht
7
Source angular spectrum
Aperture
Introduction 2015 EUVL Symposium, Maastricht
7
Fourier Synthesis Illuminator
Zoneplate lens
Introduction 2015 EUVL Symposium, Maastricht
Illuminator angular range
0.625 4xNA10° CRAσ=0.8
8Fourier Synthesis Illuminator
σ =1 outline
2015 EUVL Symposium, Maastricht
ASML Flex Pupil
9
Liu, SPIE 90480Q (2014)Meiling, SPIE 83221G (2012)
Freeform source
7 standard fills
Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht
Pupil fill
10
Conventional 0.33 4xNA, 6° CRA
Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht
Pupil diagram YAG image, 4mm below focus
Pupil fill
Crosspole 0.33 4xNA, 6° CRA
10Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht
Pupil diagram YAG image, 4mm below focus
Pupil fill
Crosspole 0.33 4xNA, 6° CRA
10Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht
Pupil diagram Modulation of flux in pupil channels
Pupil fill
Quasar 0.33 4xNA, 6° CRA
10Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht
Pupil diagram Modulation of flux in pupil channels
Pupil fill
Freeform Source 0.33 4xNA, 6° CRA
10Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht
Pupil diagram Freeform-source example
Zoneplates
5SHARP 2013 EUVL Symposium, Toyama, Japan
Gold pattern onSi-membranes
Magnetic mounting Kinematic positioning 5 mm
Gold pattern onSi-membranes
Magnetic mounting Kinematic positioning 2 mm
Zoneplates
12
Chip A
Standard Zoneplates: 0.25 to 0.625 4xNA 6° to 10° CRA 5 azimuthal angles
SHARP
Chip B Zernike Phase Contrast Differential Interference Contrast Stereoscopic imaging Cubic Phase Modulation
160 µm
2015 EUVL Symposium, Maastricht
Zoneplates
Chip A
Standard Zoneplates: 0.25 to 0.625 4xNA 6° to 10° CRA 5 azimuthal angles
Chip B Zernike Phase Contrast Differential Interference Contrast Stereoscopic imaging Cubic Phase Modulation
Chip C Elliptical zoneplates
160 µm
12SHARP 2015 EUVL Symposium, Maastricht
Ken’s data
13SHARP 2015 EUVL Symposium, Maastricht
Goldberg, SPIE 94221A (2015)
14
PhotoresistInpria YA-Series Resist
Negative-tone 50-nm absorption length
30-nm thick resist on Si-wafer coated with astandard Mo/Si-multilayer
30% EUV-transmissionon double pass
Resolution Test Target
MET3Berkeley MicrofieldExposure Tool 0.3 NA
2015 EUVL Symposium, Maastricht
15
SEM image
22-nm hp lines
Resolution Test Target 2015 EUVL Symposium, Maastricht
16
Resolution Limits
dipole
0.156 NA(0.625 NA scanner)
0.125 NA
(0.5 NA scanner)
Rayleighcoherent
zoneplate
66
33
108
5454 pitch
27 hp
53
26
87
4444 pitch
22 hp
Resolution Test Target
Illumination coherent incoherentextreme dipole
Resolution limit (full cycle)
0.5 4xNA108 nm
54 nm
66 nm
33 nm
54 nm (pitch)
27 nm (hp)
0.625 4xNA 87 nm
44 nm
53 nm
26 nm
44 nm (pitch)
22 nm (hp)
2015 EUVL Symposium, Maastricht
17Results
0.5 4xNA
Coherent illumination
100-nm hp lines
2 µm
2015 EUVL Symposium, Maastricht
17Results
0.5 4xNA
Coherent illumination
100-nm hp lines
2 µm
2015 EUVL Symposium, Maastricht
Vertical Lines
Results
0.5 4xNA
Coherent illumination rC=54 nm hp
• 100-nm hp v lines
83% modulation
300 nm
CD
182015 EUVL Symposium, Maastricht
0.5 4xNA
Coherent illumination rC=54 nm hp
60-nm hp v lines
68% modulation
Results
300 nm
CD
182015 EUVL Symposium, Maastricht
0.5 4xNA
Coherent illumination rC=54 nm hp
50-nm hp v lines
No modulation
Results
300 nm
CD
182015 EUVL Symposium, Maastricht
0.5 4xNA
Incoherent illumination rR=33 nm hp
50-nm hp v lines
20% modulation
Results
300 nm
CD
182015 EUVL Symposium, Maastricht
0.5 4xNA
Incoherent illumination rR=33 nm hp
36-nm hp v lines
5% modulation
Results
300 nm
CD
182015 EUVL Symposium, Maastricht
0.5 4xNA
Incoherent illumination rR=33 nm hp
34-nm hp v lines
4% modulation
Results
300 nm
CD
182015 EUVL Symposium, Maastricht
0.5 4xNA
Extreme dipole rD=27 nm hp
34-nm hp v lines
27% modulation
Results
300 nm
CD
182015 EUVL Symposium, Maastricht
0.5 4xNA
Extreme dipole rD=27 nm hp
28-nm hp v lines
14% modulation
Results
300 nm
CD
182015 EUVL Symposium, Maastricht
0.625 4xNA
Coherent illumination rC=44 nm hp
100-nm hp v lines
83% modulation
Results
200 nm
CD
192015 EUVL Symposium, Maastricht
0.625 4xNA
Coherent illumination rC=44 nm hp
50-nm hp v lines
56% modulation
Results
200 nm
CD
192015 EUVL Symposium, Maastricht
0.625 4xNA
Coherent illumination rC=44 nm hp
40-nm hp v lines
No modulation
Results
200 nm
CD
192015 EUVL Symposium, Maastricht
0.625 4xNA
Incoherent illumination rR=26 nm hp
40-nm hp v lines
18% modulation
Results
200 nm
CD
192015 EUVL Symposium, Maastricht
0.625 4xNA
Incoherent illumination rR=26 nm hp
28-nm hp v lines
3% modulation
Results
200 nm
CD
192015 EUVL Symposium, Maastricht
0.625 4xNA
Incoherent illumination rR=26 nm hp
26-nm hp v lines
2% modulation
Results
200 nm
CD
192015 EUVL Symposium, Maastricht
0.625 4xNA
Extreme dipole rL=22 nm hp
26-nm hp v lines
33% modulation
Results
200 nm
CD
192015 EUVL Symposium, Maastricht
0.625 4xNA
Extreme dipole rL=22 nm hp
24-nm hp v lines
25% modulation
Results
200 nm
CD
192015 EUVL Symposium, Maastricht
0.625 4xNA
Extreme dipole rL=22 nm hp
22-nm hp v lines
10% modulation
Results
200 nm
CD
192015 EUVL Symposium, Maastricht
Source angular spectrum
Aperture
202015 EUVL Symposium, MaastrichtEmulation of anamorphic imaging
Emulation of anamorphic imaging
202015 EUVL Symposium, MaastrichtEmulation of anamorphic imaging
Emulation of anamorphic imaging
Elliptical zoneplates 4x/8xNA = 0.55 6º CRA Magnification from
1250 to 1636
SEM image
212015 EUVL Symposium, MaastrichtZoneplate lenses
22Imaging results
Emulation ofanamorphicimaging
2015 EUVL Symposium, Maastricht
Emulation ofanamorphicimaging
22Imaging results 2015 EUVL Symposium, Maastricht
Emulation ofanamorphicimaging
22Imaging results 2015 EUVL Symposium, Maastricht
Emulation ofanamorphicimaging
22Imaging results 2015 EUVL Symposium, Maastricht
Emulation ofanamorphicimaging
22Imaging results 2015 EUVL Symposium, Maastricht
Emulation ofanamorphicimaging
22Imaging results 2015 EUVL Symposium, Maastricht
2x1 binning
23Imaging results 2015 EUVL Symposium, Maastricht
2x1 binning
23Imaging results 2015 EUVL Symposium, Maastricht
24
Cross sections
60-nmvertical lines
120-nmhorizontal lines,2x1 binning
Imaging results 2015 EUVL Symposium, Maastricht
SummarySemiconductor High-NA Actinic Reticle Review Project
Emulation of imaging in EUV
scanner Complementary imaging modes Phase extraction Fourier Synthesis Illuminator
produces arbitrary sources Emulation of anamorphic
imaging 22-nm half-pitch resolution
Portions of this work were funded by SEMATECH and Intel through the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.
2015 EUVL Symposium, Maastricht
sharp.lbl.gov
2015 EUVL Symposium, Maastricht
Thanks toour users.
Thanksto INTEL.
sharp.lbl.gov
Thank you!
2015 EUVL Symposium, Maastricht
Thanks toour users.
Thanksto INTEL.
