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The LHCb Upgrade from 1 to 40 MHz readout. The 20th Anniversary International Workshop on Vertex Detectors 19-24 June 2011, Rust , Austria. Abraham Gallas for the LHCb VELO Upgrade. Outline:. The LHCb upgrade: scenario & strategy The Vertex detector upgrade: Environment & plan - PowerPoint PPT Presentation
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Abraham Gallas for the LHCb VELO Upgrade
The 20th Anniversary International Workshop on Vertex Detectors 19-24 June 2011, Rust, Austria
The LHCb Upgrade from 1 to 40 MHz readout
Outline:
• The LHCb upgrade: scenario & strategy• The Vertex detector upgrade:
• Environment & plan• Detector module design & layout• Sensor options• ASIC design• Data readout rates• RF foil and material constraints• Cooling• Prototyping results from test beams
• Summary
2
The LHCb upgrade
• The Plan:• LHCb is currently running with excellent performance at higher
luminosity than the nominal: L = 21032 cm–2s-1
• The experiment will collect ~ 5fb-1 before the 2nd LHC shutdown circa 2017 will largely cover the Physics goals of the experiment
• During this shutdown we want to upgrade the detector to run at higher luminosity: L = 1033 cm–2s-1 to collect 50 fb-1 (5fb-1/year) and increased energy √s = 14 TeV
• This does not depend on any (HL)-LHC machine upgrade
3
The LHCb upgrade• Problem: The L0 hadron hardware trigger loses efficiency at higher luminosities:
• Because the DAQ event readout rate is limited to 1MHz trigger thresholds (ET) need to be raised…
• Solution: • No hardware trigger, increase the readout rate to 40MHz and implement a fully software-based trigger in the CPU farm
4
L0-buffer
1MHz
Current DAQ
Front-end
router
CPU-farm
Tell1
40MHz
Upgraded DAQ
Front-end
router
CPU-farm
Tell40 +
LLT-buffer
1MHz
1MHz
5-10MHz
5-10MHz
L0 LLT
Max 3 kHz Max 20 kHzStorage Storage ~ 50 kB ~ 100 kB
Environment: radiation challenge
5
Severe & non-uniform irradiation damage.
Dose after 50 fb-1
The sensors edges placed at 7mm from the beam line during “stable beams”. After 50 fb-1 they see a fluence > 4x1015 1 MeV neq cm-2
Recent RD50 studies have shown that silicon irradiated at these levels still delivers a signal of ~ 10ke- / MIP
After that dose, we expect currents of ~120 mA/cm2
@ -15 °C and Vbias= 900 V Danger of thermal runaway at the tip of the sensor from bulk current and heat injected by ROC
• Efficient heat removal mandatory to avoid thermal runaway!!• Low noise electronics to cope with reduced signal
185 MRad or 4.1 1015 neq/cm2
7mm
Environment: data rate challenge
6
Curves fitted to A.r-1.9 radius (cm)Par
ticle
Hits
/ E
vent
/ cm
2
Luminosity (cm-2s-1)
2.1032
Current5.1032 10.1032 20.1032
A= 0.98 1.46 2.46 4.80
~ 5 particles/cm2/event at r=7.0 mm
Particle occupancy per event (simulation) • Electronics has to digitize, zero suppress and transmit event data at 40 MHz
• By pixel standards the occupancy of the VELO is miniscule, but the data rate is HUGE
• 1 chip O(1cm2) has to transmit ~13 Gbit s-1
• Our current granularity, occupancies = ok but FE electronics and DAQ are not
VELO Upgrade plan• Different systems of the current VELO1 will be retained:
• CO2 cooling plant• LV & HV power supply systems• Vacuum vessel and equipment• Motion system
• Major new components:• Detector modules based on pixel sensors• New readout ASIC: ´VELOPIX´• Enhance module cooling interface• New design of low material RF foil between beam and detector vacua• Multi Gb s-1 readout system
• Main design concerns: • Efficient cooling to avoid thermal runaway• Handle the huge data rate • Reduce material budget • Maintain if not improve the excellent performance2:
• Proper time resolution ~ 50 fs• IP resolution ~ 13 + 25/pT μm
7
Replace
1,2 See talk by Kazu AKIBA, Silvia Borghi
• Sensor tiles: 3 readout ASICs on a single sensor, with a guard ring ~500 μm
• 2 sensor tiles are mounted on opposite sides of a substrate:
• Readout & power traces on the substrate
• Substrate choices:• CVD diamond : excellent mechanical & thermal properties: => low mass• Carbon fibre/TPG or Al/TPG
• Material in sensitive region ~ 0.8%X0
• Prototype work started using Timepix ROCs (@ CNM).
Velo Pixel module
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~15mm ASIC ASIC ASIC
~43mm
Sensor tile :
sensor
Bot Sensor 200um
ASIC150um
Substrate 400um
Coolingchannel
Glue 50um
Top Sensor 200umASIC150u
m
Connector
60μm Kapon+120μm Al
Pixel module & detector layout
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BEAM
• The full detector is composed of 26 stations• The modules on either side of the beam are
staggered to create overlap regions• This layout has been simulated to be fully
efficient (~98.3%, 4 hit per track) in the LHCb acceptance 15-250x300mrad Varying spacing along the beam
axis. Minimal pitch 24 mm
beam
• A ‘station’ is made of 8 sensor tiles. • active area ~100% (except
small gaps)• Closest pixel is at 7.5 mm
from the beam center
top tiles, bottom tiles
~ 1 mm gap
Sensor options R&D
10
• Planar Silicon:• Thin sensors seem well suited to the high fluences• R&D focus is on:
• Reducing guard ring size. (closer approach to the beam, better impact parameter resolution)• More exotics solutions: trenches, laser scribing & Al2O3 Sidewall
passivation (under investigation) • Reducing thickness. (less X0, lower bias voltage)
• Several wafers with various manufacturers• CNM/USC : 150μm p-in-n sensors, 150-200μm n-in-p sensor single ASICs and later in the year 3x1 ASICs tiles• Micron/Liverpool: n-in-p (150 and 300μm thick) • VTT: slim edge (active) 50,100μm edge, different GR, 50-200 μm thick
• Irradiation campaign up to 1.4 x 1016 MeV neq/cm2:• Planar silicon + Medipix3 check performance in test beam• Different GR structures to be fabricated at the manufacturers
d
Dicing distances= 250μm, 400μm, 600μmDistance calculated from the active area.One guard ring. CNM G. Pellegrini et al.
Marc Christophersen et al.
Sensor options R&D
• 3D sensors:• Lower depletion voltage and low power less critical for thermal runaway• Greater signal charge due to faster collection time (less trapping) potentially super radiation hard• Active edge allows closer approach to beam• Double-sided increase yield and improved areas of inefficiency• Many Medipix /Timepix assemblies available
• Diamond p-CVD:• No thermal run away problem!• Very radiation hard• Double act: sensor and thermal path• Financially affordable for the VELO upgrade ( total surface ~ 1340 cm2 )• Produced 1.43 x 1.43 cm2 , 750 mm thick sensor• Will produce Timepix assemblies for position resolution studies in testbeam
11
Fluence (1015 1 MeV neq cm-2)
90Sr
Strip-based alternative design
12
• Designed new R & F strip sensors, as ‘backup’ solution in case material budget or power of the pixel detector beyond acceptable levels:
• 30 mm minimum pitch, 20 x 128 strips per sensor
• Goal : keep occupancies < 0.6 % at 1033cm-2s-1
• Signal to Noise ratio after 50 fb-1:• Keep strip capacitance low• Remove pitch adapter to FE ROC
• 40MHz rad-hard ROC to be designed:• Adapted to low capacitance detector• Programmable ZS data transmission• Possible synergy with ST upgrade
• Sensitive area less than 500 mm from edge. First strip at 7.5 mm from beam
• Reduce X0
• Test of prototypes from Hamamatsu this year
Pixels
Strips
ASIC development
13
Timepix(now) Timepix2(end 2011) VELOPIX(2012)
• 256x256 pixels, size (55mm x 55 mm) gives equal
spatial precision in both directions, removing the need
for double sided modules (factor 2 in material)
• IBM 130 nm CMOS process
• 3 modes of operation• Counting mode• Time of Arrival: ToA• Time over threshold: ToT
• Low occupancy is suited to ToT measurement, with no loss from 1 μs deadtime
Changes needed• Replace shutter based readout/acquisition scheme by continuous, deadtimeless (ZS) operation
• Sustained readout of pixels with maximum
flux 5 particles /cm2/25 ns
• Reduced ToT range and resolution• Add bunchtime identification good within 25 ns
• Timepix2 is an important step towards VELOPIX• Similar front end• Fast column bus• Data Driven readout• Simultaneous Time over
Threshold and Time of Arrival measurements
• Collaborating in the design• Aim to have first VELOPIX
by 2012
ASIC developmentTimepix2/VELOPIX Analog requirements overlap ~100%:
• Reduce timewalk: <25 ns @ 1ke- threshold • Faster preamplifier and discriminator of Timepix2 covers and exceeds this requirement
• Ikrum range 5 …40nA• sensitivity 750 … 6000 e-/25ns • 20 ke- signal returns to baseline in 660 … 83 ns
• Reduced non-linearity near threshold• Analog power consumption <10 μW/pixel• Higher preamplifier gain (~50mV/ke-)
• reduced ENC (σENC ~ 75 e-), lower detectable charge (<500 e- )• reduced linear range (30 ke- ) : better suited to Si –tracking
• Threshold spread after tuning < 30e-
14
ASIC development
• Digital functionality of VELOPIX:• Simultaneous 4 bit Time-over-threshold and time identification (12 bit)
• Data loss must be kept < 0.5% in worst conditions (6kHz pixel hit-rate)• Limit ToT < 400ns• Adequate buffering & bus speeds
• Sparse and data driven readout
• SEU protection of logic & registers
• multi-Gbit/s output links : 4 x 3.2Gb/s#
• Design of superpixel (4x4), column bus and EOC logic very advanced
• Total power budget <3W full chip
• Radiation hardness TID 400Mrad
15
Data rates
16
1.3 1.0
5.3 2.6
0.6
1.0
1.31.0
5.32.6
0.6
1.0
Average #particles/event
• Numbers at highest occupancies:• average particle rate per ‘hottest’ asic ~ 5 particles/25ns = 200MHz• average pixel cluster size ~2: (pessimistic assumption, 200μm Si)
• Information bits per hit pixel : 32 • 4 bit : Time over Threshold value• 12 bit : bunch identification• 16 bit : pixel address
• => Single asic data rate can reach 13 Gbit/s !
• 30% data reduction can be achieved by ‘clustering’ data:• share the bunch id (12bit) and address bits between neighbor pixels.• must be done before column readout, i.e. inside pixel array !• most efficiently done in units of 4x4 pixels = “Super pixel”
• Still requires several multi-gigabit readout links
• Challenge to divide work between FPGA readout and ASIC logic
• Current questions:• Can we specify stream sizes to reduce workload on DAQ system • How much information should we decode for trigger pattern recognition stage?
A A
A A
A A
A A
Super pixelDigital
A A
A A
A A
A A
220 um
~140 um
220
um
RF separation foil I
17
• Long list of severe requirements:• Vacuum tight (< 10-9 mbar l/s) • Radiation hard• Low mass ( dominates the X0 contribution before the second measured point). Rigid to prevent deflection onto the sensors or pinhole leaks• Good electrical conductivity:
• Mirror beam currents and shield against RF noise pick-up in front-end electronics
• Thermally stable and conductive(heat load from the beam)
• Material and fabrication options:• Aluminium (AlMgMn): 200-350 μm thickness:
• By 5-axis milling of a single homogeneous block• Carbon Fiber Reinforced Polymer (CFRP) coated with Aluminium• Carbon Fiber (impractical, porosity and thickness vary too much)
corrugation
• Cake-shaped foil on a 3-axis milling machine• Inductive measurements + 3D measurements• Leak rate: <10−9 mbar l/s• Now more complicated shaped with 5-axis milling machine
RF separation foil II
18
Pitch = 30 mmDepth = 6 mmStep = 16 mmRadius > 6mm
5 plies carbon fiber + epoxy
+ nano-particles + Al (vapor deposition)
RF separation foil III
19
A proof-of-technique prototype has been madeVery encoring results, still some issues need to be improved
Cooling studies
20
• At the tip of the sensor Ileak≅ O(100) mA/cm2 :• Thermal runaway avoided if temperature -10°C to -15°C
• First ANSYS simulations done:• Model includes radial (r-1.9) and temperature dependent leakage power generated in Si.• 400 mm-thick CVD diamond substrate to the tip of the sensor• Cooling channel at 1cm from the outermost edge of silicon• Two-phase CO2 cooling capable to -35° for the cooling channel• Nominal thickness and thermal conductivities, and ROC heat loads were used
• Various parameters were modified and the conclusions:• The cooling channel should be as close as possible to the silicon• The ROC power should be minimized • Thermal impedances between cooling line and silicon should be minimized
• For a ROC power < 3.0 W/chip CO2 cooling is enough to avoid thermal runaway up to a dose ~1016 neq/cm2. Factor 2
• Verifications with thermal mockups are planned
CO2 coolingTemp -35°C
TipTemp ~ -17°C
Timepix telescope evolution
21
Telescope Pixel Resolution at DUT
Time Tag Track Rate
Timepix 2009 55mm 2.3mm 100ns 100Hz
Timepix 2010 (May) 55mm 2.0mm ~1ns ~700Hz
Timepix 2010 (Aug-present)
55mm 1.5mm ~1ns 5kHz
6 pixel telescope planes angled in 2 dimensions to optimize resolution
Device Under Testmoved and rotated viaremote controlled stepper motor
Fine pitch strip detectorwith fast electronics LHC readout
USB2 readout – 700 tracks per second
USB1 readout
Timepix Telescope Performance
22
RELAXD interface
Scintillator Coincidence and TDC ~1ns
RELAXD interface/ LHC readout (Beetle, …)
RELAXD interface
DUTCooled
Timepix ToT Tracking
Timepix ToT Tracking
Logic + TDC
Synchronized Trigger
Timepix ToA Track Time Tagging Plane ~100ns
• RELAXD readout from NIKHEF (FPGA-based)
• >5kHz track rate, resolution @ DUT 1.5mm
• Implemented a TDC with whichTimepix ToA mode gives us ~1ns per track time stamping
• Able to provide and record synchronized triggers to 40MHz readout
50,000,000 tracks recorded in 2 weeks (120 GeV π± @ SPS)Eight different DUTs analysed*
Telescope in Time Tagging configuration
*arXiv:1103.2739v2 [physics.ins-det]
Planar Silicon: Thin vs Thick
23
Sensor Angle (deg)
s(mm
)
Thin sensors: Direct comparison of 300 and 150 μm thick sensors in identical conditions
Planar sensor
24
Resolution as a function of angle
10V data (close to depletion)100V data (overdepleted)There is an enormous gain at lower voltagePossible advantage for VELO under investigation
Resolution as a function of # bits
Resolution as a function of number of bits(shown for three different angles)Input to Timepix2/Velopix design4 bits and above are safe3 bits is close to resolution degradation
3D sensors test beam results
25
Detailed characterization of 3d device and direct comparison to planar sensor*. Irradiated sensor also evaluated
3D Planar *Degrees 0o 10o 0o 10o
Spatial resolution
15.8±0.1 9.18±0.1 10.15±0.1 5.86±0.1
Voltage
Corner Centre Ring Pixel
2V 35.6 79.1 99.1 91.220V 39.1 86.7 99.7 93.0
Binary resolution = 55µm / √12 = 15.9µm
Resolution before and after irradiation close to binary resolution
3D binary resolution = 74.5µm / √12 = 23.1µm
*2011 JINST 6 P05002 doi: 10.1088/1748-0221/6/05/P05002
Results from Diamond p-CVD sensorsStrasbourg telescope
26
Goal: produce 400 mm sensors and compare their performance with 150 mm Si at different level of irradiation
First step: laboratory and test bench studies of 750 mm sensors in a test beam (CERN RD42 test beam with Strasbourg telescope)
Preliminary
Preliminary
Summary
• We expect the LHCb Upgrade to happen in the 2nd LHC shutdown circa 2017• The experiment has a firm plan and timeline to achieve the upgrade• The VELO pixel module concepts and detector layout will be realizable• We are still pursuing different sensor options• The ASIC design is progressing well • R&D is progressing well in the key aspects of the detector• Prototypes are being built and will be tested to assess their performances and
suitability in a harsh environment like the current VELO detector
27