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About OMICS Group OMICS Group International is an amalgamation ofOpen Access publicationsand worldwide international science conferences and events. Established in the year 2007 with the sole aim of making the information on Sciences and technology Open Access, OMICS Group publishes 400 online open accessscholarly journalsin all aspects of Science, Engineering, Management and Technology journals. OMICS Group has been instrumental in taking the knowledge on Science & technology to the doorsteps of ordinary men and women. Research Scholars, Students, Libraries, Educational Institutions, Research centers and the industry are main stakeholders that benefitted greatly from this knowledge dissemination. OMICS Group also organizes 300International conferencesannually across the globe, where knowledge transfer takes place through debates, round table discussions, poster presentations, workshops, symposia and exhibitions.About OMICS Group Conferences OMICS Group International is a pioneer and leading science event organizer, which publishes around 400open access journalsand conducts over 300 Medical, Clinical, Engineering, Life Sciences, Pharmascientific conferencesall over the globe annually with the support of more than 1000scientific associationsand 30,000 editorial board members and 3.5 million followers to its credit.

OMICS Group hasorganized 500 conferences, workshops and national symposiums across the major cities including San Francisco, Las Vegas, San Antonio, Omaha, Orlando, Raleigh, Santa Clara, Chicago, Philadelphia, Baltimore, United Kingdom, Valencia, Dubai, Beijing, Hyderabad, Bengaluru and Mumbai.

On Exotic Nanostructurefor bio-FETHiroshi Watanabe*, Andy Lee*, Ikuo Kurachi***Dept. Elec. & Comp. Eng., National Chiao Tung University**High Energy Accelerator Research OrganizationBiosensor & Bioelectronics:Track 10-4 Electrochemical biosensors8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU3MotivationKoike, et.al.25m longand 2.4mm wideTa2O7 (6nm) : K=27EOT=0.9nmEOT+1.8nm = 2.7nm~2nmtailingN-Semi.8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU4Surface ChargeSDSensitive!Charge ..In-doped ZnOHiroshi Watanabe, NCTU8/13/2014 (San Antonio, TX)5Surface ChargeSensitive?SDCharge ..Hiroshi Watanabe, NCTU8/13/2014 (San Antonio, TX)6In-doped ZnOSNWSensitiveSChargeD nanowires are configured. .Hiroshi Watanabe, NCTU8/13/2014 (San Antonio, TX)7DSGet Around8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU8Not Get AroundSpeed downSDX: Target Y: ReceptorSense it!!X+ YXY.8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU9Limit Of Detection (LOD)= =0+ + = 0 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU10X+ YXYM. A. Reed, IEDM2013-208K: dissociation Const.MacroscopicIndependent Sense, Sensitive!SChargeS/A S/AS/A S/A S/A S/A S/A S/A 2 nanowires are configured. . = nanowires detected the charge by Human IgG. 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU11Independent Sense, Gate Width (GW) = .Line (L), SNW = Space (S), SNW-to-SNW = = + Rev. LOD = LOD8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU12 = .%; = = K40 /As detect the signal change. 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU13SOI (20nm)N-type (0)Line / Space by 30nm Tech.L=30nm S=30nm8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU14Sliming< >=

= 57nm8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU15BL - DecoderSGSSGDCSL=0VSGSSGDSGSSGDSGSSGDSNW (~um)S/AS/AS/AS/AVDD=1V8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU16VDD=1VVDD=1VVDD=1VY Y Y Y Y YY YY Y Y Y YY Y Y Y Y YY YY Y Y Y YY Y Y Y Y YY YY Y Y Y YY Y Y Y Y YY YY Y Y Y YN-typeN-typeN-typeN-typenMOSFETSGSpMOSFETSGDS/ACSL=0VVDD=1VSelf-HeatingRhyner, IEDM13-79015XY Y Y Y Y YY YY Y Y Y YSemi. Nano-Wire (N-type) = . /+/XN-typeBL - Decoder= + ||ln++ 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU /Modeling for Device SimulationSemi. Nano-Wire (N-type)VdIdWe may sense this change.N=0

N=2+/8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU18Electrically Floating IslandHow to determine the potential? Adopted Capacitance so far.E= = 0 How to know Capacitance?8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU19Electrically Floating IslandDBL Know the potential withoutCapacitance.How to know Capacitance?8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU20Electrically Floating IslandH. Watanabe, et. al., IEEE TED vol. 61, pp. 1145-1152, 2014.8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU19Sim. Results00.20.40.8

0.611.21.41.61.8-6-4-202N, stored in dot46EOT=2.0 EOT=1.6 EOT=1.4J elec N J elec N 01-orderreduction8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU29(nm)On fabrication ToleranceBefore exposed to solutionError Correction is easy.Width fluctuationToo thin,too high resistivityprogram8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU23program8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU24By Thinking Exp. & Device SimulationIndependent Sense SystemPowerful Error CorrectionOptimization of bio-FETsAcknowledgement:The authors appreciate Prof. Koike (OIT) for helpful discussions.Let Us Meet AgainWe welcome you all to our future conferences of OMICS Group International

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