A733 PNP Epitaxial Silicon Transistor
Elite Enterprises (H.K.) Co., Ltd. Part No.: A733 Flat 2505,
25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.Tel: (852)
2723-3122 Fax: (852) 2723-3990 Email: [email protected] Page: 1
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LOW FREQUENCY AMPLIFIER z Collector-Emitter Voltage: VCEO=-50V z
Collector Dissipation: PC(max)=250mW Absolute Maximum Ratings
(TA=25oC)
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -150 mA
Collector Dissipation PC 250 mW
Junction Temperature TJ 150 oC
Storage Temperature TSTG -55~+150 oC
Electrical Characteristics (TA=25oC)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO IC= -5A, IE=0 -60 V
Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -50 V
Emitter-Base Breakdown Voltage BVEBO IE= -50A, IC=0 -5 V
Collector Cut-off Current ICBO VCB= -60V, IE=0 0.1 A Emitter
Cut-off Current IEBO VEB= -5V, IC=0 01 A DC Current Gain hFE VCE=
-6V, IC= -1mA 90 200 600
Collector-Emitter Saturation Voltage VCE(sat) IC= -100mA, IB=
-10mA -0.18 -0.3 V
Transition Frequency fT VCE= -6V, IC= -10mA
f= 30MHz 50 180 MHz
hFE CLASSIFICATION
Classification R Q P K hFE 90-180 135-270 200-400 300-600
