A COMPARITIVE STUDY OF THE MSI AND PROBA-V LINEAR …microelectronics.esa.int/amicsa/2012/pdf/S5_08_Vermeiren_slides.pdf · Proba - V • Gapfiller SPOT-Vegetation Proba-V Sentinel-3

Copyright 2012 |

A COMPARITIVE STUDY OF THE MSI AND PROBA-V LINEAR ARRAYS UNDER THE INFLUENCE OF RADIATION

AMICSA workshop, ESTEC- Noordwijk, 28-08-2012

Jonas Bentell, Koen van der Zanden, Thierry Colin, Siegfried Herftijd, Patrick Merken, Jan Vermeiren

Copyright 2012 | AMICSA - Noordwijk, Radiation effects for Si and InGaAs detectors 2

Overview

• Mission objectives • FPA architecture • ROIC designs • Obtained results

- TID - High and low E protons - Heavy ion

• Conclusions


Proba - V

• Gapfiller SPOT-Vegetation Proba-V Sentinel-3 • Daily monitoring > 35o

• 3 telescopes with 34o each. • VNIR: 3-band multispectral linear CCD

- 5200 pixels on 13 μm - or 67.6 mm


Earthcare

• ESA cornerstone mission • Clouds & dust on Earth’s radiation budget • MSI: Multi-Spectral Imager

- 4 VNS bands + 3 TIR bands(8.8, 10.8 & 12 μm) • Swath width: 150 km • Ground resolution: 500 m • Co-registration: < 75 m


Overview



• Conclusions


Proba-V: XLIN-3000 architecture

• 3*1024 pixels – 25 μm pitch • Mechanically butted with overlap


Proba-V: ROIC design • CTIA: low lag, good linearity • CDS: noise reduction • 0.35 μm ON-Semi technology

CTIA CDS S / H BUF

CTIA CDS S / H BUF

CTIA CDS S / H BUF

CTIA CDS S / H BUF

* 1024 Pixel circuits

Output amplifiers

Dual output busses


Proba-V: Performance

• Power: < 900 mW • Sensitivity:

- 0.19 and 32 μV/e-

- In 16 steps

• Noise level - [600 – 4200 e-

rms]

1 10 100

1E-3

0.01

RM

S n

oise

[V].

Diff

eren

tial s

igna

l.

Feedback capacitor size (fF)

10 us 100 us

IWR mode noise measurements


MSI: XLIN-512 architecture • 512 pixels – 25 μm pitch with bilinear readout • 4 different detector materials • 0.5 μm ON-Semi technology


MSI: material selection

Channel Wavelength [µm]

Material Tdetector SNR @100%ρToA

VIS 0.67±0.01 Si, p-on-n, 11.5 μm epi, optimized AR

Room temp 500

NIR 0.865±0.01 Si, p-on-n, 11.5 μm epi, optimized AR

Room temp 500

SWIR1 1.55±0.015 In0.47 Ga0.53As grown on InP Room temp 250

SWIR2 2.21±0.015 Extended InGaAs on buffer layer

[230-240 K] 250

0

10

20

30

40

50

0102030405060700

2

4

6

x 104


MSI: material selection

Channel Wavelengt

h Material Q E

[%] MTF [%]

VIS 0.67±0.01 μm Si, p-on-n, 11.5 μm epi, optimized AR 80 52

NIR 0.865±0.01 μm

Si, p-on-n, 11.5 μm epi, optimized AR 56 47

SWIR1 1.55±0.015 μm

In0.47Ga0.53As grown on InP 75 52

SWIR2 2.21±0.015 μm

Extended InGaAs on buffer layer 60 52


MSI: ROIC design

• CTIA: low lag, good linearity • Autozero: bias offset reduction

- +

V ref

S&H

Reset

0.1pF,

1pF,

Gain

AZ

- +

Video Out

Video Bus

Select

Channel

+

+ -

-

Itest

Vdet =


MSI: Performance

• Power: < 300 mW • Sensitivity:

- 1600, 160, 20 and 10 nV/e-

• Noise level - [0.45 and 7 mVrms] - [4400 – 45000 e-

rms] - off-chip CDS for high gain


Overview



• Conclusions

Summary of radiation tests

Array type 60Co p+ Heavy Ion Proba-V SWIR1 ESTEC, Noordwijk, NL KVI, Groningen, NL HIF, UCL, B

MSI RED ESTEC, Noordwijk, NL KVI, Groningen, NL

MSI NIR ESTEC, Noordwijk, NL KVI, Groningen, NL

MSI SWIR1 SCK, Mol-B ESTEC, Noordwijk, NL

PROSCAN, PSI, CH KVI, Groningen, NL

HIF, UCL, B

MSI SWIR2 ESTEC, Noordwijk, NL ESTEC, Noordwijk, NL

PROSCAN, PSI, CH KVI, Groningen, NL

HIF, UCL, B


TID: test conditions

• Element: 60Co • Total dose: 10 krad(Si) • Dose rate:

- ESTEC: 1500 rad(Si)/h - SCK: 180 360 rad(Si)/h

• Observed parameters: - Dark current - Noise - Power dissipation - Linearity


TID: dark current


Reset and dark current levels @ 1000 ms

10000

15000

20000

25000

30000

35000

40000

45000

0 1000 2000 3000 4000 5000 6000 7000

Dose (R)

Le

ve

l (A

DU

)

Ave Px 100Ave Px 101Ave Px 102CDS Ave Px 110CDS Ave Px 111CDS Ave Px 112Reset level Px 100Reset level Px 101Reset level Px 102

Ref

TID: Power + summary


Ref

RED NIR SWIR2 REF 5856 5861 5863 REF 5877 5885 5891 REF 4847 4858 4860

Noise 99% 99% 99% 99% 99% 100% 100% 99% 103% 97% 103% 103%

Idark 103% 145% 160% 160% 62% 157% 182% 147% 109% 104% 134% 93%

Lin 97% 93% 96% 90% 90% 95% 95% 96% 67% 97% 143% 125%

Proton: test conditions

• Element: p+

• Fluence: 1010 p+/cm2 • High Energy:

- 150 to 190 MeV - Possible Latch-up effects - Dark current change

• Low Energy: - 30 MeV - [2.2.10-7 – 2.4.10-7] Rad(Si)/proton/cm2 2.3 krad(Si) - Dark current change


NO Latch-ups observed

Low energy Proton: dark current


0.00E+000 2.00E+009 4.00E+009 6.00E+009 8.00E+009 1.00E+010

2.00E-013

4.00E-013

6.00E-013

8.00E-013

1.00E-012

1.20E-012

1.40E-012

1.60E-012

1.80E-012

Dar

k cu

rrent

[A]

Dose [protons/cm2]

Id ROIC 0 Id ROIC 2

0

0.01

0.02

0.03

0.04

0.05

0.06

0 2E+10 4E+10 6E+10

4831483253645365

Dose (/cm2)

Dar

kcu

rren

t (pA

)0

0.005

0.01

0.015

0.02

0.025

0.03

0 2E+10 4E+10 6E+10

5858586458655866

Dose (/cm2)

Dar

kcu

rren

t (pA

)

Low energy Protons: SWIR2


Heavy ions: test conditions

• Element: Ne, Ar, Kr and Xe ions

• Fluence: 107 ions/cm2 or 175 SEEs • LET (Linear Energy Transfer):

- [6.20 – 67.70 MeV.cm2/mg(Si)]

• Effects to be studied: - SEFI: Single Event Functional interrupts - Soft Latch-ups - Hard Latch-ups


Heavy Ions: SEFI

• Left most array irradiated • Right bar: indication of the current


Heavy Ions: Latch-ups


Heavy ion: cross-section


0 10 20 30 40 50 60 70

1E-9

1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

Cros

s sec

tion

LET

Discussion • TID:

- Affects detector, not ROIC - Most probably increase in G-R current - SWIR2: surface leakage current

• Protons: - Low energy protons: increase in Dark current detector - Masked by low bias for MSI detectors - No increase in blinkers / RTN pixels seen - High energy protons: SEE ROIC - No effect observed

• Heavy Ions: - Only affecting ROIC - Complex (digital) circuits are more vulnerable - Commercial circuit design, no precautions, BUT fully static



Overview



• Conclusions


Conclusions

• 3 different detector materials • 2 different ROICs • 2 different ROIC technologies

• TID: dark current increase • Protons: dark current, NO blinkers • Heavy ions: acceptable cross-section.


Questions ??

Documents

A COMPARITIVE STUDY OF THE MSI AND PROBA-V LINEAR …microelectronics.esa.int/amicsa/2012/pdf/S5_08_Vermeiren_slides.pdf · Proba - V • Gapfiller SPOT-Vegetation Proba-V Sentinel-3