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Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
A Comparison between
Common-source and Cascode
Topologies for 60GHz Amplifier
Design in 65nm CMOS
Qinghong Bu, Ning Li, Kenichi Okada,
and Akira Matsuzawa
Tokyo Institute of Technology
1
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology2012/3/23
Outline
Topologies used in this work
Common-source (CS) versus
Cascode (Cas.) topology
Gain-boost Cascode (Cas.) topology
One stage power amplifier using
CS and gain-boost topologies
Measurememt results
Conclusion
2
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
CS topology at mmW frequency
The features of CS Topology
comparing with Cas. Topology
Small noise figure
Reasonable power gain
×Larger power consumption
×Worse instability factor
2012/3/23
3
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology2012/3/23
Cas. topology at mmW frequency
At lower frequencies, obtains a
high gain.
At mmW frequencies, a reduction
of the reverse isolation S12.
Increase maximum gain
Increase stability
×Larger parasitic capacitance in the
inter-stage node
4
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology2012/3/23
Cas. structure with inductance (1)
Large parasitic capacitance decreases
the gain
Gain-boost technique is utilized to
increase gain
Cascode topology with inductance
*C. Inui, et al, APMC, Dec. 2007
5
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
The TEG schematics of the topologies
2012/3/23
Cas.
CS
Gain-boost Cas.
6
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
-2-101234
0 20 40 60 80 100
Sta
bil
ity F
ac
tor
Frequency (GHz)
0
10
20
30
0 20 40 60 80 100
Ma
xG
ain
(d
B)
Frequency (GHz)
-50
-40
-30
-20
-10
0 20 40 60 80 100
S1
2 (
dB
)
Frequency (GHz)
2012/3/23
Comparison between CS and Cas. TEGs
MAG K
S12
Line color
No. of
finger
(CS & CG)
Wf
(mm)
TL
(mm)
Power
(mW)
Blue_CS 20 2 0 8.3
Red_Cas. 20 & 20 2 0 5.8
Black_Cas. 20 & 20 2 80 6.0
Vdd=1.2 V, Vg1=0.6 V
7
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
1-stage amp. using CS topology
TL are utilized for impedance matching
Decoupling MIM transmission line is used for AC ground
CS transistor size:20×2mm
2012/3/23
8
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology2012/3/23
1-stage amp. using Cas. topology
Cas. TEG size: CS=20×2mm, CG=20×2mm, TL=80mm.
9
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
0
2
4
6
8
0 20 40 60 80 100
S2
1(d
B)
Frequency (GHz)
-80
-60
-40
-20
0
0 20 40 60 80 100
S1
2(d
B)
Frequency (GHz)
Measured results of CS and Cas. amps(1)
2012/3/23
Vdd=1.2 V, Vg1=0.6 V
S12 S21
0
1
2
3
4
5
6
0 20 40 60 80 100
Sta
bilit
y f
ac
tor
Frequency (GHz)
K Red: Cas.
Blue: CS
10
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Measured results of CS and Cas. amps(2)
2012/3/23
Vdd=1.2 V, Vg1=0.6 V
-20
-15
-10
-5
0
0 20 40 60 80 100
S11(d
B)
Frequency (GHz)
-20
-15
-10
-5
0
0 20 40 60 80 100
S2
2(d
B)
Frequency (GHz)
Red: Cas. , Blue: CS
S11 S22
11
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Summary of the comparison (1)
2012/3/23
TEG MAG (dB)
(60GHz)
S12(dB)
(60GHz)
K
(60GHz)
Power
(mW)
CS 9 -13 0.5 8.3
Cas. 9 -28 2.1 5.8
Gain-boost Cas. 12 -33 2.0 6.0
Ampifier Freq.
(GHz)
S11
(dB)
S22
(dB)
S12
(dB)
S21
(dB) K
Power
(mW)
CS 66 -9 -15 -11 5.5 1.0 8.3
Gain-boost Cas. 56 -14 -11 -25 6.7 3.5 6.0
Vdd=1.2 V, Vg1=0.6 V
12
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
MaxGain and output power versus power
2012/3/23
0
2
4
6
8
10
12
14
0
0.5
1
1.5
2
2.5
3
3 6 9 12 15 18 21
MaxG
ain
(d
B)
P1d
B,o
ut
(mW
)
Pdc (mW)
P1dB,out_CasP1dB,out_CSMaxGain_CasMaxGain_CS
The maximum gain of the Cas. topology is much larger than CS topology with less power consumption
The output power at P1dB of the CS topology is larger than the CS topology
60 GHz
Simulation results
13
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Chip photos
2012/3/23
280 mm
23
0 m
m
65nm CMOS process
CS: 0.064 mm2
Cas.: 0.053 mm2 185 mm
28
5 m
m
Cas. CS
14
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology
Matsuzawa& Okada Lab.
Matsuzawa Lab.Tokyo Institute of Technology2012/3/23
Conclusion
The comparison of CS, Cas. and gain-boost Cas. topologies are carried out in 65nm CMOS process.
Gain-boost technique is studied to increase the gain of cascode topology.
1-stage amplifiers are designed utilizing CS and gain-boost Cas. topologies
The gain-boost Cas. topology have large gain, better isolation and stability factor with less power consumption at 60GHz than the CS topology.
The 1-stage amplifier utilizing gain-boost Cas. topology achieves smaller output power than that utilizing the CS topology.