P-Channel Enhancement Mode Field Effect Transistor

D S

S G

G

ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）

Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V

Gate-Source Voltage VGS ±20 V Drain Current-Continuousª@Tj=125℃

- Pulse bd

ID -2.6 A

IDM -10 A

Drain-source Diode Forward Currentª IS -1.25 A Maximum Power Dissipationª PD 1.25 W Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 ←

THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 100 ℃/W

©2005 Mos-Tech Semiconductor 1 h t t p : / / w w w . m a t e y m o r e . c o m

FEATURES ● Super high dense cell design for low RDS(ON)

● Rugged and reliable ● Simple drive requirement ● SOT-23 package

PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ

-30V -2.6A 95@ VGS=-10V

125 @ VGS=-4.5V

NOTE：The MT3401 is available in a lead-free package

MT3401Mos-Tech Semiconductor Co.,LTD. 茂钿半導體股份有限公司

D

ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250µA -30 V

Zero Gate Voltage Drain Current IDSS VDS=-16V,VGS=0V 1 µA

Gate-Body Leakage IGSS VGS=±10V,VDS=0V ±100 nA

ON CHARACTERITICS

Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250µA -1.0 -3.0 V

Drain-Source On-State Resistance RDS(ON) VGS=-10V,ID=-2.6A 95 130

mΩVGS=-4.5V,ID=-2.0A 125 180

Forward Transconductance ɡFS VGS=-10V,ID=-1.7A 2.4 S

DAYNAMIC CHARACTERISTICS

Input Capacitance CISS

VDS=-15V,VGS=0V f=1.0MHZ

226 pF

Output Capacitance COSS 87 pF

Reverse Transfer Capacitance CRSS 19 pF

SWITCHING CHARACTERISISTICS

Turn-On Delay Time tD(ON) VDD=-15V ID=-1.0A,

VGEN=-10V RL=15ohm

RGEN=6ohm

9 ns

Rise Time tr 9 ns

Turn-Off Delay Time tD(OFF) 18 ns

Fall Time tf 6 ns

Total Gate Charge Qg

VDS=-15V,ID=-1.7A VGS=-10V

5.8 nC

Gate-Source Charge Qgs 0.8 nC

Gate-Drain Charge Qgd 1.5 nC

©2005 Mos-Tech Semiconductor 2 h t t p : / / w w w . m a t e y m o r e . c o m

MT3401Mos-Tech Semiconductor Co.,LTD. 茂钿半導體股份有限公司

ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage VSD VGS=0V,IS=-1.25A -0.8 -1.2 V

Notes a. Surface Mounted on FR4 Board, t≦10sec b. Pulse Test: Pulse Width≦300Us, Duty Cycle≦2% c. Guaranteed by design, not subject to production testing.

- VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-source Voltage (V)

Figure 1.Output Characteristics Figure 2.Transfer Characteristics

- VGS, Drain-to Source Voltage

Figure3.Capacitance Figure4. On-Resistance Variation with

Temperature

©2005 Mos-Tech Semiconductor 3 h t t p : / / w w w . m a t e y m o r e . c o m

-ID

, Dra

in C

urre

nt (A

)

-ID

,Dra

in C

urre

nt(A

)

C,C

apac

itanc

e(pF

)

VGS=-10V

ID=-1.7A

RD

S(O

N),

On-

Res

ista

nce(

mΩ

)

MT3401 Mos-Tech Semiconductor Co.,LTD. 茂钿半導體股份有限公司

--50 -25 0 25 50 75 100 125

0.5

0.4

0.3

0.2

0.1

0.0

-0.1

-0.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

21

18

15

12

9

6

3

0

20

10

1

0

0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6

0 1 2 3 4 5 6 7

-

©2005 Mos-Tech Semiconductor 4 h t t p : / / w w w . m a t e y m o r e . c o m

Vth

, Nor

mal

ized

Gat

e-So

urce

Thr

esho

ld V

olta

ge

Is-S

ourc

e C

urre

nti(A

)

10

1

Tj,. Junction Temperature(℃)

Figure5.Gate Threshold Variation With Temperature

VSD-Soures-to-Drain Voltage(V)

ɡFS,Transconductance(S)

-Is,S

ourc

e-dr

ain

curr

ent(A

)

-IDS, Drain-Source Current (A)

Figure7.Transconductance Variation With Drain Current

-VG

S,Gat

e to

Sou

rce

Volta

ge

50

10

1

0.1

0.03

-VSD, Body Diode Forward Voltage

Figure8.Body Diode Forward Voltage Variation with Source Current

0

2

4

6

8

10

0.1 1 10 20 50

Qɡ, Total Gate Charge(nC)

Figure9. Gate Charge -VDS, Drain-Source Voltage(V)

Figure10.Maximum Safe Operating Area

-ID

,Dra

in C

urre

nt(A

)

ID=-250uA TJ=150℃

VGS=-5V Tj=25℃

VDS=-15V

ID=-1.7A

TJ=25℃

MT3401Mos-Tech Semiconductor Co.,LTD. 茂钿半導體股份有限公司