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Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com 1Rev. E111/1/2016
IS62WV5128ALL IS62WV5128BLL
®Long-term SupportWorld Class Quality
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speedaccesstime:55ns,70ns
• CMOSlowpoweroperation
36 mW (typical) operating
9µW(typical)CMOSstandby
• TTLcompatibleinterfacelevels
• Singlepowersupply
1.65V–2.2VVdd (IS62WV5128ALL)
2.5V–3.6VVdd (IS62WV5128BLL)
• Fullystaticoperation:noclockorrefresh required
• Threestateoutputs
• Industrialtemperatureavailable
• Lead-freeavailable
DESCRIPTION
TheISSIIS62WV5128ALL/IS62WV5128BLLarehigh-speed,4MbitstaticRAMsorganizedas512Kwordsby8 bits. It is fabricated using ISSI's high-performanceCMOStechnology.Thishighly reliableprocesscoupledwith innovative circuit design techniques, yields high-performance and low power consumption devices.
When CS1 is HIGH (deselected) the device assumesa standby mode at which the power dissipation can be reduceddownwithCMOSinputlevels.
Easy memory expansion is provided by using Chip Enable andOutputEnableinputs.TheactiveLOWWriteEnable(WE) controls both writing and reading of the memory.
TheIS62WV5128ALLandIS62WV5128BLLarepackagedin the JEDEC standard 32-pinTSOP (TYPE I), 32-pinsTSOP(TYPEI),32-pinTSOP(TypeII),32-pinSOPand36-pinminiBGA.
FUNCTIONAL BLOCK DIAGRAM
NOVEMBER 2016
A0-A18
CS1
OE
WE
512K x 8MEMORY ARRAYDECODER
COLUMN I/O
CONTROLCIRCUIT
GND
VDD
I/ODATA
CIRCUITI/O0-I/O7
2 Integrated Silicon Solution, Inc. — www.issi.com Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
® Long-term SupportWorld Class Quality
PIN DESCRIPTIONS
A0-A18 AddressInputs
CS1 Chip Enable 1 Input
OE OutputEnableInput
WE Write Enable Input
I/O0-I/O7Input/Output
NC No Connection
Vdd Power
GND Ground
1 2 3 4 5 6
A
B
C
D
E
F
G
H
A0
I/O4
I/O5
GND
VDD
I/O6
I/O7
A9
A1
A2
OE
A10
NC
WE
NC
A18
CS1
A11
A3
A4
A5
A17
A16
A12
A6
A7
A15
A13
A8
I/O0
I/O1
VDD
GND
I/O2
I/O3
A14
36-pin mini BGA (B) (6mm x 8mm)(Package Code B)
Integrated Silicon Solution, Inc. — www.issi.com 3Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
® Long-term SupportWorld Class Quality
32-pinTSOP(TYPEI),(PackageCodeT)32-pinsTSOP(TYPEI)(PackageCodeH)
32-pinSOP(PackageCodeQ)32-pinTSOP(TYPEII)(PackageCodeT2)
PIN DESCRIPTIONS
A0-A18 AddressInputs
CS1 Chip Enable 1 Input
OE OutputEnableInput
WE Write Enable Input
I/O0-I/O7Input/Output
Vdd Power
GND Ground
PIN CONFIGURATION
12345678910111213141516
32313029282726252423222120191817
A11A9A8
A13WEA18A15VDD
A17A16A14A12A7A6A5A4
OEA10CS1I/O7I/O6I/O5I/O4I/O3GNDI/O2I/O1I/O0A0A1A2A3
12345678910111213141516
32313029282726252423222120191817
A17A16A14A12
A7A6A5A4A3A2A1A0
I/O0I/O1I/O2
GND
A15A18WEA13A8A9A11OEA10CS1I/O7I/O6I/O5I/O4I/O3
VDD
4 Integrated Silicon Solution, Inc. — www.issi.com Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
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DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter TestConditions Vdd Min. Max. Unit
Voh OutputHIGHVoltage Ioh = -0.1mA 1.65-2.2V 1.4 — V Ioh = -1mA 2.5-3.6V 2.2 — V
VoL OutputLOWVoltage IoL = 0.1mA 1.65-2.2V — 0.2 V IoL = 2.1mA 2.5-3.6V — 0.4 V
VIh InputHIGHVoltage 1.65-2.2V 1.4 Vdd + 0.2 V 2.5-3.6V 2.2 Vdd + 0.3 V
VIL(1) InputLOWVoltage 1.65-2.2V –0.2 0.4 V 2.5-3.6V –0.2 0.6 V
ILI InputLeakage GND≤ VIn ≤ Vdd –1 1 µA
ILo OutputLeakage GND≤ Vout ≤ Vdd, OutputsDisabled –1 1 µANotes:1. VIL (min.) = –1.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter Value Unit
Vterm TerminalVoltagewithRespecttoGND –0.2toVdd+0.3 V
Vdd VddRelatedtoGND –0.2toVdd+0.3 V
tStg StorageTemperature –65to+150 °C
Pt PowerDissipation 1.0 WNote:1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.Thisisa
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-ability.
OPERATING RANGE (Vdd)
Range AmbientTemperature IS62WV5128ALL IS62WV5128BLL
Commercial 0°Cto+70°C 1.65V-2.2V 2.5V-3.6V
Industrial –40°Cto+85°C 1.65V-2.2V 2.5V-3.6V
Integrated Silicon Solution, Inc. — www.issi.com 5Rev. E111/1/16
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AC TEST LOADS
Figure1 Figure2
CAPACITANCE(1)
Symbol Parameter Conditions Max. Unit
CIn Input Capacitance VIn = 0V 8 pF
Cout Input/OutputCapacitance Vout = 0V 10 pFNote:1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
AC TEST CONDITIONS
Parameter IS62WV5128ALL IS62WV5128BLL (Unit) (Unit)
InputPulseLevel 0.4VtoVdd-0.2V 0.4VtoVdd-0.3V
InputRiseandFallTimes 5ns 5ns
InputandOutputTiming Vref Vref andReferenceLevel
OutputLoad SeeFigures1and2 SeeFigures1and2
IS62WV5128ALL IS62WV5128BLL
1.65-2.2V 2.5V-3.6V
r1(Ω) 3070 3070
R2(Ω) 3150 3150
Vref 0.9V 1.5V
Vtm 1.8V 2.8V
R1
30 pFIncluding
jig andscope
R2
OUTPUT
VTM
R1
5 pFIncluding
jig andscope
R2
OUTPUT
VTM
6 Integrated Silicon Solution, Inc. — www.issi.com Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
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POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
62WV5128ALL (1.65V - 2.2V) Symbol Parameter TestConditions Max. Unit 70ns ICC VddDynamicOperating Vdd = Max., Com. 25 mA Supply Current Iout = 0 mA, f = fmAx Ind. 30
ICC1 OperatingSupply Vdd = Max.,CS1=0.2VCom. 10 mA Current We = Vdd-0.2V Ind. 10 f=1mhz
ISB1 TTLStandbyCurrent Vdd = Max., Com. 0.35 mA (TTLInputs) VIn = VIh or VIL Ind. 0.35 CS1 = VIh, f=1MHz
ISB2 CMOSStandby Vdd = Max., Com. 15 µA Current(CMOSInputs) CS1≥ Vdd – 0.2V, Ind. 15 VIn ≥ Vdd – 0.2V, or VIn ≤ 0.2V, f = 0
Note:1. At f = fmAx, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
62WV5128BLL (2.5V - 3.6V) Symbol Parameter TestConditions Max. Unit 55ns ICC Vdd DynamicOperating Vdd = Max., Com. 40 mA Supply Current Iout = 0 mA, f = fmAx Ind. 45
ICC1 OperatingSupply Vdd = Max.,CS1=0.2V Com. 15 mA Current We = Vdd-0.2V Ind. 15 f=1mhz ISB1 TTLStandbyCurrent Vdd = Max., Com. 0.35 mA (TTLInputs) VIn = VIh or VIL Ind. 0.35 CS1 = VIh, f=1MHz
ISB2 CMOSStandby Vdd = Max., Com. 15 µA Current(CMOSInputs) CS1≥ Vdd – 0.2V, Ind. 15 VIn ≥ Vdd – 0.2V, or VIn ≤ 0.2V, f = 0
Note:1. At f = fmAx, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. — www.issi.com 7Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
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AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = VIL, WE = VIh)
DATA VALIDPREVIOUS DATA VALID
tAA
tOHAtOHA
tRC
DOUT
ADDRESS
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
55ns 70ns Symbol Parameter Min. Max. Min. Max. Unit
trC ReadCycleTime 55 — 70 — ns
tAA AddressAccessTime — 55 — 70 ns
tohA OutputHoldTime 10 — 10 — ns
tACS1 CS1AccessTime — 55 — 70 ns
tdoe OEAccessTime — 25 — 35 ns
thzoe(2) OEtoHigh-ZOutput — 20 — 25 ns
tLzoe(2) OEtoLow-ZOutput 5 — 5 — ns
thzCS1 CS1toHigh-ZOutput 0 20 0 25 ns
tLzCS1 CS1toLow-ZOutput 10 — 10 — nsNotes:1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof0.4to
Vdd-0.2V/Vdd-0.3VandoutputloadingspecifiedinFigure1.2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
8 Integrated Silicon Solution, Inc. — www.issi.com Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
® Long-term SupportWorld Class Quality
AC WAVEFORMS
READ CYCLE NO. 2(1,3) (CS1, OE Controlled)
Notes:1. WEisHIGHforaReadCycle.2. Thedeviceiscontinuouslyselected.OE,CS1=VIL. We=VIh.3. AddressisvalidpriortoorcoincidentwithCS1LOWtransition.
tRC
tOHAtAA
tDOE
tLZOE
tACS1
tLZCS1
tHZOE
HIGH-ZDATA VALID
tHZCS
ADDRESS
OE
CS1
DOUT
Integrated Silicon Solution, Inc. — www.issi.com 9Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
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WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
55ns 70ns Symbol Parameter Min. Max. Min. Max. Unit
tWC WriteCycleTime 55 — 70 — ns
tSCS1 CS1toWriteEnd 45 — 60 — ns
tAW AddressSetupTimetoWriteEnd 45 — 60 — ns
thA AddressHoldfromWriteEnd 0 — 0 — ns
tSA AddressSetupTime 0 — 0 — ns
tPWe WEPulseWidth 40 — 50 — ns
tSd DataSetuptoWriteEnd 25 — 30 — ns
thd DataHoldfromWriteEnd 0 — 0 — ns
thzWe(3) WELOWtoHigh-ZOutput — 20 — 20 ns
tLzWe(3) WEHIGHtoLow-ZOutput 5 — 5 — ns
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof0.4VtoVdd-0.2V/Vdd-0.3VandoutputloadingspecifiedinFigure1.
2. TheinternalwritetimeisdefinedbytheoverlapofCS1LOWandWELOW.AllsignalsmustbeinvalidstatestoinitiateaWrite,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherisingorfallingedgeofthesignalthatterminatesthewrite.
3. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
AC WAVEFORMS
WRITE CYCLE NO. 1 (CS1 Controlled, OE = HIGH or LOW)
DATA-IN VALID
DATA UNDEFINED
tWC
tSCS1
tAW
tHA
tPWE
tHZWE
HIGH-Z
tLZWEtSA
tSD tHD
ADDRESS
CS1
WE
DOUT
DIN
10 Integrated Silicon Solution, Inc. — www.issi.com Rev. E111/1/16
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WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
DATA-IN VALID
DATA UNDEFINED
tWC
tSCS1
tAW
tHA
tPWE
tHZWE
HIGH-Z
tLZWEtSA
tSD tHD
ADDRESS
OE
CS1
WE
DOUT
DIN
DATA-IN VALID
DATA UNDEFINED
tWC
tSCS1
tAW
tHA
tPWE
tHZWE
HIGH-Z
tLZWEtSA
tSD tHD
ADDRESS
OE
CS1
WE
DOUT
DIN
Integrated Silicon Solution, Inc. — www.issi.com 11Rev. E111/1/16
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DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter TestCondition Min. Max. Unit
Vdr VddforDataRetention SeeDataRetentionWaveform 1.2 3.6 V
Idr DataRetentionCurrent Vdd=1.2V,CS1≥Vdd –0.2V — 15 µA
tSdr DataRetentionSetupTime SeeDataRetentionWaveform 0 — ns
trdr RecoveryTime SeeDataRetentionWaveform trC — ns
DATA RETENTION WAVEFORM (CS1 Controlled)
VDD
CS1 ≥ VDD - 0.2V
tSDR tRDR
VDR
CS1GND
Data Retention Mode
12 Integrated Silicon Solution, Inc. — www.issi.com Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
® Long-term SupportWorld Class Quality
ORDERING INFORMATION
IS62WV5128ALL(1.65V-2.2V)
IndustrialRange:–40°Cto+85°C Speed(ns) OrderPartNo. Package
70 IS62WV5128ALL-70BI miniBGA(6mmx8mm)
ORDERING INFORMATION
IS62WV5128BLL(2.5V-3.6V)
IndustrialRange:–40°Cto+85°C Speed(ns) OrderPartNo. Package
55 IS62WV5128BLL-55TLI TSOP,TYPEI,Lead-free
55 IS62WV5128BLL-55QLI SOP,Lead-free
55 IS62WV5128BLL-55T2LI TSOP,TYPEII,Lead-free
55 IS62WV5128BLL-55HLI sTSOP,TYPEI,Lead-free
55 IS62WV5128BLL-55BI miniBGA(6mmx8mm)
55 IS62WV5128BLL-55BLI miniBGA(6mmx8mm),Lead-free
Integrated Silicon Solution, Inc. — www.issi.com 13Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
® Long-term SupportWorld Class Quality
14 Integrated Silicon Solution, Inc. — www.issi.com Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
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Integrated Silicon Solution, Inc. — www.issi.com 15Rev. E111/1/16
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® Long-term SupportWorld Class Quality
16 Integrated Silicon Solution, Inc. — www.issi.com Rev. E111/1/16
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Integrated Silicon Solution, Inc. — www.issi.com 17Rev. E111/1/16
IS62WV5128ALL, IS62WV5128BLL
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NO
TE :
1. CO
NTR
OLLIN
G D
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NS
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: MM
.2. R
eference document : JE
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08/12/2008Package O
utline