4V Drive Nch + Pch MOSFET4V Drive Nch + Pch MOSFET SH8M14 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High

Data Sheet

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4V Drive Nch + Pch MOSFET SH8M14

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET/

Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package(SOP8).

3) Low voltage drive(4V drive).

Application

Switching

Packaging specifications Inner circuitPackage Taping

Code TB

Basic ordering unit (pieces) 2500SH8M14

Absolute maximum ratings (Ta = 25C)

Tr1 : N-ch Tr2 : P-ch

Drain-source voltage VDSS 30 30 V

Gate-source voltage VGSS 20 20 V

Continuous ID 9 7 A

Pulsed IDP 36 28 A

Continuous Is 1.6 1.6 A

Pulsed Isp 36 28 A

W / TOTAL

W / ELEMENT

Channel temperature Tch CRange of storage temperature Tstg C*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Power dissipation PD

Symbol

Type

Source current(Body Diode)

Drain current

Parameter

2.0

55 to 150

UnitLimits

1.4

150

*1

*2

*1

SOP8

(1)

(8) (5)

(4)

(1) Tr1 Source(2) Tr1 Gate(3) Tr2 Source(4) Tr2 Gate(5) Tr2 Drain(6) Tr2 Drain(7) Tr1 Drain(8) Tr1 Drain

∗1 ESD PROTECTION DIODE∗2 BODY DIODE

∗2

∗1

∗2

∗1

(8) (7)

(1) (2)

(6) (5)

(3) (4)

1/10 2011.06 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data SheetSH8M14 　

Electrical characteristics (Ta = 25C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage IGSS - - 10 A VGS=±20V, VDS=0V

Drain-source breakdown voltage V (BR)DSS 30 - - V ID=1mA, VGS=0V

Zero gate voltage drain current IDSS - - 1 A VDS=30V, VGS=0V

Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA

- 15 21 ID=9A, VGS=10V

- 18 25 ID=9A, VGS=4.5V

20 28 ID=9A, VGS=4V

Forward transfer admittance l Yfs l 5.0 - - S VDS=10V, ID=9A

Input capacitance Ciss - 630 - pF VDS=10V

Output capacitance Coss - 230 - pF VGS=0V

Reverse transfer capacitance Crss - 110 - pF f=1MHz

Turn-on delay time td(on) - 10 - ns ID=4.5A, VDD 15V

Rise time tr - 33 - ns VGS=10V

Turn-off delay time td(off) - 42 - ns RL=3.3

Fall time tf - 10 - ns RG=10

Total gate charge Qg - 8.5 - nC ID=9A, VDD 15V

Gate-source charge Qgs - 2.3 - nC VGS=5V

Gate-drain charge Qgd - 4.0 - nC

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)


Forward Voltage VSD - - 1.2 V Is=9A, VGS=0V

*Pulsed

Parameter Conditions

ConditionsParameter

Static drain-source on-stateresistance

RDS (on) m

*

*

*

*

*

*

*

*

*

*

2/10 2011.06 - Rev.A

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Electrical characteristics (Ta = 25C)

<Tr2(Pch)>


Gate-source leakage IGSS - - 10 A VGS=20V, VDS=0V

Drain-source breakdown voltage V (BR)DSS 30 - - V ID=1mA, VGS=0V

Zero gate voltage drain current IDSS - 1 A VDS=30V, VGS=0V

Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA

- 21.5 29.0 ID=7A, VGS=10V

- 29.0 39.0 ID=3.5A, VGS=4.5V

- 31.0 40.8 ID=3.5A, VGS=4.0V

Forward transfer admittance l Yfs l 6.0 - - S VDS=10V, ID=7A

Input capacitance Ciss - 1200 - pF VDS=10V

Output capacitance Coss - 170 - pF VGS=0V

Reverse transfer capacitance Crss - 170 - pF f=1MHz

Turn-on delay time td(on) - 12 - ns ID=3.5A, VDD 15V

Rise time tr - 40 - ns VGS=10V

Turn-off delay time td(off) - 80 - ns RL=4.27

Fall time tf - 65 - ns RG=10

Total gate charge Qg - 18 - nC ID=7A, VDD 15V

Gate-source charge Qgs - 3.5 - nC VGS=5V

Gate-drain charge Qgd - 6.5 - nC

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)


Forward Voltage VSD - - 1.2 V Is=7A, VGS=0V

*Pulsed

Parameter Conditions

Conditions

mStatic drain-source on-stateresistance

RDS (on)

Parameter

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

3/10 2011.06 - Rev.A

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Electrical characteristic curves (Ta=25C)〈Tr.1(Nch)〉

0

1

2

3

4

5

6

7

8

9

0 0.2 0.4 0.6 0.8 1

Dra

in C

urre

nt :

I D [A

]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

VGS=10.0V

VGS=4.0V VGS=4.5V

VGS=2.8V VGS=3.0V

Ta=25°C Pulsed

0

1

2

3

4

5

6

7

8

9

0 2 4 6 8 10

Dra

in C

urre

nt :

I D [A

]


Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

Ta=25°C Pulsed

1

10

100

1000

0.01 0.1 1 10 100

Stat

ic D

rain

-Sou

rce

On-

Stat

e R

esis

tanc

e R

DS

(on)

[mΩ

]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V VGS=4.5V VGS=10V

Ta=25°C Pulsed

1

10

100

1000

0.01 0.1 1 10 100

Stat

ic D

rain

-Sou

rce

On-

Stat

e R

esis

tanc

e R

DS

(on)

[mΩ

]



VGS=10V pulsed Ta=125°C

Ta=75°C

Ta=25°C Ta=-25°C

1

10

100

1000

0.01 0.1 1 10 100

Stat

ic D

rain

-Sou

rce

On-

Stat

e R

esis

tanc

e R

DS

(on)

[mΩ

]



VGS=4.5V pulsed

Ta=125°C

Ta=75°C

Ta=25°C Ta=-25°C

1

10

100

1000

0.01 0.1 1 10 100

Stat

ic D

rain

-Sou

rce

On-

Stat

e R

esis

tanc

e R

DS

(on)

[mΩ

]



VGS=4V pulsed Ta=125°C

Ta=75°C

Ta=25°C Ta=-25°C

4/10 2011.06 - Rev.A

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0.01

0.1

1

10

100

0.001 0.01 0.1 1 10 100

Forw

ard

Tran

sfer

Adm

ittan

ce

Y fs [

S]


Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V pulsed

Ta=125°C

Ta=75°C

Ta=25°C Ta=-25°C

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Dra

in C

urrn

t : I

D [A

]

Gate-Source Voltage : VGS [V]

Fig.8 Typical Transfer Characteristics

VDS=10V pulsed

Ta=125°C

Ta=75°C

Ta=25°C Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0

Sour

ce C

urre

nt :

Is [A

]

Source-Drain Voltage : VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V pulsed

Ta=125°C

Ta=75°C

Ta=25°C Ta=-25°C

0

10

20

30

40

50

0 2 4 6 8 10

Stat

ic D

rain

-Sou

rce

On-

Stat

e R

esis

tanc

e R

DS

(on)

[mΩ

]

Gate-Source Voltage : VGS [V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=9.0A

ID=4.5A

Ta=25°C Pulsed

1

10

100

1000

10000

0.01 0.1 1 10

Switc

hing

Tim

e : t

[ns]


Fig.11 Switching Characteristics

td(on) tr

td(off)

tf

VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed

0

2

4

6

8

10

0 5 10 15

Gat

e-So

urce

Vol

tage

: V

GS [V

]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C VDD=15V ID=9A Pulsed

5/10 2011.06 - Rev.A

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10

100

1000

10000

0.01 0.1 1 10 100

Cap

acita

nce

: C [p

F]


FIg.13 Typical Capacitance vs. Drain-Source Voltage

Ta=25°C f=1MHz VGS=0V

Ciss

Coss

Crss

0.01

0.1

1

10

100

0.1 1 10 100

Dra

in

Cur

rent

: I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm)

Operation in this area is limited by RDS(on) (VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e :

r（t）

Pulse width : Pw (s)

FIg.15 Normalized Transient Thermal Resistance v.s. Pulse Width

Ta=25°C Single Pulse : 1Unit

Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a)

6/10 2011.06 - Rev.A

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〈Tr.2(Pch)〉

0

1

2

3

4

5

6

7

0 0.2 0.4 0.6 0.8 1

VGS= -2.5V

VGS= -10V VGS= -4.5V VGS= -4.0V

VGS= -3.0V Ta=25°C Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DR

AIN

CU

RR

ENT

: -I D

[A]

DRAIN-SOURCE VOLTAGE : -VDS[V]

0

1

2

3

4

5

6

7

0 2 4 6 8 10

VGS= -2.5V VGS= -3.0V

VGS= -10V VGS= -4.5V VGS= -4.0V

Ta=25°C Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)


DR

AIN

CU

RR

ENT

: -I D

[A]

0.001

0.01

0.1

1

10

100

0 1 2 3

VDS= -10V Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

Fig.3 Typical Transfer Characteristics

DR

AIN

CU

RR

ENT

: -I D

[A]

GATE-SOURCE VOLTAGE : -VGS[V]

1

10

100

1000

0.1 1 10

VGS= -4.0V VGS= -4.5V VGS= -10V

Ta=25°C Pulsed

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : -ID[A]

STAT

IC D

RAI

N-S

OU

RC

E O

N-S

TATE

R

ESIS

TAN

CE

: RD

S( o

n)[mΩ

]

1

10

100

1000

0.1 1 10

VGS= -10V Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)


STAT

IC D

RAI

N-S

OU

RC

E O

N-S

TATE

R

ESIS

TAN

CE

: RD

S( o

n)[mΩ

]

1

10

100

1000

0.1 1 10

VGS= -4.5V Pulsed Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)


STAT

IC D

RAI

N-S

OU

RC

E O

N-S

TATE

R

ESIS

TAN

CE

: RD

S( o

n)[mΩ

]

7/10 2011.06 - Rev.A

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1

10

100

1000

0.1 1 10

VGS= -4.0V Pulsed Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)


STAT

IC D

RAI

N-S

OU

RC

E O

N-S

TATE

R

ESIS

TAN

CE

: RD

S( o

n)[mΩ

]

0.1

1

10

100

0.01 0.1 1 10

VDS= -10V Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

Fig.8 Forward Transfer Admittance vs. Drain Current

FOR

WAR

D T

RAN

SFER

AD

MIT

TAN

CE

: |Yf

s| [S

]


0.01

0.1

1

10

100

0 0.5 1 1.5

VGS=0V Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage

SOU

RC

E C

UR

REN

T : -

I s [A

]

SOURCE-DRAIN VOLTAGE : -VSD [V]

0

20

40

60

80

100

0 5 10 15

ID= -7.0A

ID= -3.5A

Ta=25°C Pulsed

Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage

STAT

IC D

RAI

N-S

OU

RC

E O

N-S

TATE

R

ESIS

TAN

CE

: RD

S( O

N)[m

Ω]

GATE-SOURCE VOLTAGE : -VGS[V]

1

10

100

1000

10000

0.01 0.1 1 10

tf

td(on)

td(off)

Ta=25°C VDD= -15V VGS= -10V RG=10W Pulsed

tr

Fig.11 Switching Characteristics

SWIT

CH

ING

TIM

E : t

[ns]


0

2

4

6

8

10

0 10 20 30

Ta=25°C VDD= -15V ID= -7.0A RG=10W Pulsed

Fig.12 Dynamic Input Characteristics

GAT

E-SO

UR

CE

VOLT

AGE

: -V G

S [V

]

TOTAL GATE CHARGE : Qg [nC]

8/10 2011.06 - Rev.A

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10

100

1000

10000

0.01 0.1 1 10 100

Ciss

Coss

Crss

Ta=25°C f=1MHz VGS=0V

Fig.13 Typical Capacitance vs. Drain-Source Voltage


CA

PAC

ITAN

CE

: C [p

F]

0.01

0.1

1

10

100

1000

0.1 1 10 100

PW = 10ms

DC operation

Operation in this area is limited by RDS(ON) (VGS= -10V)

PW=100us

PW=1ms

Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm)

Fig.14 Maximum Safe Operating Aera


DR

AIN

CU

RR

ENT

: -I D

(A)

0.001

0.01

0.1

1

10

0.001 0.01 0.1 1 10 100 1000

Ta=25°C Single Pulse : 1Unit

Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

PULSE WIDTH : Pw(s)

NO

RM

ARIZ

ED T

RAN

SIEN

T TH

ERM

AL

R

ESIS

TAN

CE

: r (t

)

9/10 2011.06 - Rev.A

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Measurement circuits

<Tr1(Nch)>

<Tr2(Pch)>

NoticeThis product might cause chip aging and breakdown under the large electrified environment. Please consider to designESD protection circuit.

VGS

RG

VDS

D.U.T.

ID

RL

VDD

90%

90% 90%

10% 10%

50%10%50%

VGS

Pulse width

VDS

ton toff

trtd(on) tftd(off)

VG

VGS

Charge

Qg

Qgs Qgd

VGS

IG(Const.)

VDS

D.U.T.

ID

RL

VDD

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

VGS

RG

VDS

D.U.T.

ID

RL

VDD

90%

90% 90%

10% 10%

10%50% 50%

Pulse Width

VGS

VDS

ton toff

trtd(on) tftd(off)

VG

VGS

Charge

Qg

Qgs Qgd

VGS

IG(Const.)

VDS

D.U.T.

ID

RL

VDD

Fig.3-1 Switching Time Measurement Circuit Fig.3-2　Switching Waveforms

Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform

10/10 2011.06 - Rev.A

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Notice

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Documents

4V Drive Nch + Pch MOSFET4V Drive Nch + Pch MOSFET SH8M14 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High