3D Silicon Capacitors - Trendsetter Electronics ... · IPDiA 3D Silicon Capacitors ... dimension to substantially increase the capacitor surface and thus its capacitance without increasing

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3D Silicon Capacitors

HSSC - High Stability and reliability Capacitors LPSC - Low Profile Capacitors 80 µm thick HTSC - High Temperature Capacitors up to 200°C XTSC - Xtreme Temperature Capacitors up to 250°C WBSC / WTSC / WXSC - Wire Bondable vertical Capacitors WLSC - Wire bondable vertical Low profile Capacitors EMSC - Wire bondable and EMbedded low profile Capacitors ETSC / EXSC - High / Extreme Temperature wire bondable Capacitors up to 250°C UBSC / ULSC - Broadband and Ultra Broadband surface mounted Capacitors up to 67 GHz+ UBEC / ULEC - Broadband and Ultra Broadband Embedded Capacitors up to 67 GHz+ UWSC - Ultra large-band Wire bondable vertical Capacitors > 26 GHz ATSC - High Temperature Automotive Capacitors up to 200°C

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Date of release:01/03/2016 Rev 2.0

Document ID: Product Line Leaflet

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IPDiA 3D Silicon Capacitors

the Best Choice for all Demanding Applications

IPDiA high-density silicon capacitors have been developed with a semiconductor MOS process and are using the third dimension to substantially increase the capacitor surface and thus its capacitance without increasing the capacitor footprint. IPDiA technology is based on a monolithic structure embedded in a monocristalline substrate (mono MIM and multi MIM).

Capacitance variation vs DC biasing voltage (for SiCap and MLCC technologies)

Capacitance variation vs temperature

(for SiCap and MLCC technologies)

A reliability 10 times better than MLCCs Coming from the same DNA as the semiconductor MOS process, IPDiA capacitors have a default mode fully modelized with proven consistent data and offer therefore predictable and exceptional reliable performances. Our SiCap technology features high reliability - up to 10 times better than alternative capacitor technologies – mainly obtained thanks to the highly pure oxide generated during the high temperature curing. Furthermore, all electrical tests are completed at the end of the production steps which avoids any early failure.

Higher reliability in a smaller package This advanced 3D topology gives a developed area equivalent to 80 ceramic layers in an amazing 80 μm thickness of active capacitance area. Thanks to a very linear and low dispersive dielectric, miniaturization, capacitance value and electrical performances are optimized.

Ultra large-band Wire bondable vertical Silicon Capacitors > 26 GHz (UWSC)

UWSC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data

systems or products. The UWSC are optimized for DC decoupling and bypass applications. They offer high rejection at > 26 GHz. The

UWSC capacitors also provide very high capacitance stability over temperature (±0.5 %) and voltage. These capacitors are compatible

with standard wire bonding assembly (ball and wedge). The bottom electrode is in Ti/Ni/Au and the top electrode is in Ti/Cu/Ni/Au.

Key Features

Ultra large band performance higher than 26 GHz

Resonance free and phase stability

Unique capacitance value of 1 nF in 0101

High stability of capacitance value over temperature, voltage and aging

Ultra low ESR and ESL and high reliability

(*) Other values on request

(**) e.g. 10nF/0303/BV 50V

Finishing and Packaging

Can be directly mounted on the PCB using die bonding and wire bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu). Compatible with standard wire bonding assembly (ball and wedge).

Tape and reel, waffle pack, film frame carrier or raw wafer delivery.

Available parts. For other values, contact your IPDiA sales representative

Parameters Value

Equivalent Series Inductance(ESL) typ 6 pH (**) @ SRF

Equivalent Series Resistance(ESR) typ. 14 m(**)

Insulation resistance 100 G min @ RVDC, +25°C Aging Negligible, < 0.001 %/1000 h Reliability FIT<0.017 parts/billion hours Capacitor height Max 250 µm or 100 µm

Available parts. For other values, contact your IPDiA sales representative.

Parameters Value Capacitance range 10 pF to 100 nF(*) Capacitance tolerance ± 15 %(*) Operating temperature range -55 °C to 150 °C Storage temperature - 70 °C to 165 °C Temperature coefficient <±0.5 %, from -55 °C to +150 °C Breakdown voltage (BV) 11 V, 30 V, 50 V, 150 V, 450 (**) Capacitance variation versus RVDC 0.02 %/V (from 0 V to RVDC)

High Temperature Automotive Silicon Capacitors up to 200°C (ATSC)

The ATSC capacitors target Under-the-Hood electronics and all sensors exposed to harsh conditions in the automotive market segment.

These automotive grade capacitors are optimized for decoupling functions. They are manufactured in IPDiA ISO-TS 16949 certified

facility, under AEC-Q100 conditions up to 200ºC.


Pad finishing in Aluminum (3 µm thickness +/-10%). Applicable for high temperature wirebonding and other mountings

Tape and reel, waffle pack or wafer delivery.

Key Features

Qualified according to AEC-Q100

Ultra long life @ 200°C


16 V operating voltage

Load dump

8 kV HBM ESD

Suitable for high temperature leadframe mounting



Parameters Value

Equivalent Series Inductance (ESL) Typ 500 pH

Equivalent Series Resistance (ESR) Typ 0.1

Insulation resistance 50 G min @ RVDC, +25°C

20 G min @ RVDC, +200°C

Aging Negligible, < 0.001 %/10 000 h

Reliability FIT<0.017 parts/billion hours

Capacitor height 250 µm typ(*)

Parameters Value

Capacitance range 1 nF to 100 nF(*)

Capacitance tolerance ±15 %

Operating temperature range -55 to 200 °C

Storage temperature - 70 to 215 °C

Temperature coefficient ±1 %, from -55 to +200°C

Breakdown Voltage (BV) 30 V

Capacitance variation versus RVDC

0.1 %/V (from 0 V to RVDC)

IPDiA silicon capacitors are the best choice for all demanding applications in medical, automotive, communication, industrial and high reliability market such as downhole, defense/aerospace. IPDiA portfolio includes silicon capacitors from pF to tens of µF and is composed of:

Low Profile Capacitor < 80 µm thin for

decoupling inside critical space application

such as IC decoupling, MOS sensor,

broadband modules, RFID;

High Temperature Capacitor up to 250°C with

very high stability;

Ultra Broadband Capacitor up to 67 GHz;

High Reliability Medical and Automotive Grade

Capacitor.

IPDiA product ranges reflect

the benefits

of our

disruptive technology

Please refer to our website www.ipdia.com to get the latest versions of our commercial and technical leaflets. Please download the assembly instructions on www.ipdia.com/assembly and read them carefully before use.

IPDiA operates design centers, sales and marketing offices and a manufacturing facility of 10 000 m2 (110000 ft

2) certified

ISO 9001 / 14001, ISO TS16949 for the automotive market as well as ISO 13485 for medical devices.

Broadband and Ultra Broadband surface mounted Silicon Capacitors up to 67 GHz+ (UBSC, ULSC)



(**) e.g. 100 nF/0402/BV 11V

UBSC/ULSC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data

systems. These ultra broadband capacitors are optimized for DC blocking, feedback, coupling and bypass applications in ultra broadband

applications. They offer low insertion loss, low reflection and unique phase stability. The UBSC/ULSC capacitors provide very high

capacitance stability over temperature (±0.5%) and voltage. These capacitors are available from 16 kHz to 67 GHz+ for the UBSC and to

20 GHz for the ULSC. They are fully compatible with high speed automated pick-and-place manufacturing operations and are available

with ENIG termination.

Key Features

Ultra broadband performance up to 67 GHz+

Resonance free

Phase stability


Low ESL

High reliability


Lead-free nickel/solder coating compatible with automatic soldering technologies: reflow and manual. Other top finishings available on request (ex: lead-free bumping - SAC305 type6)


Parameters Value Capacitance range 10 nF to 100 nF(*) Capacitance tolerance ± 15 %(*) Operating temperature range -55 °C to 150 °C Storage temperature - 70 °C to 165 °C Temperature coefficient <±0.5 %, from -55 °C to +150 °C Breakdown voltage (BV) 11 V, 30 V(*) Capacitance variation versus RVDC 0.1 %/V (from 0 V to RVDC)

Equivalent Series Inductance (ESL) Max 100 pH(**) @ SRF

Equivalent Series Resistance (ESR) Max 400 m

(**)


UBEC/ULEC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data

systems or products. The UBEC/ULEC are optimized for DC decoupling and bypass applications. They offer high rejection up to 67

GHz+ for the UBEC and up to 20 GHz for the ULEC. The UBEC/ULEC capacitors also provide very high capacitance stability over

temperature (±0.5 %) and voltage. These capacitors are compatible with standard wire bonding assembly (ball and wedge). Top

electrodes are in 3µm Aluminum (Al/Si/Cu).

Broadband and Ultra Broadband Embedded Silicon Capacitors up to 67 GHz+ (UBEC, ULEC)

Key Features


Resonance free

Phase stability


Low ESL

High reliability


Can be directly mounted on the PCB using die bonding and wire bonding(s). Capacitors with top electrodes in 3 µm Aluminum (Al/Si/Cu). Other top finishings available on request (ex: Ti/Cu/Ni/Au). Compatible with standard wire bonding assembly (ball and wedge).



(*) Other values on request.

(**) e.g. 100nF/0404/BV 11V


Equivalent Series Inductance(ESL) Max 50 pH(**) @ SRF


(**)

Insulation resistance 100 G min @ RVDC, +25°C Aging Negligible, < 0.001 %/1000 h Reliability FIT<0.017 parts/billion hours Capacitor height Max 100 µm


Wire bondable and EMbedded low profile Silicon Capacitors (EMSC)

Parameters Value Capacitance range 390 pF to 4.7 µF

Capacitance tolerances ±15 %(**)

Operating temperature range -55°C to 150°C

Storage temperature range -70°C to 165°C

Temperature coefficient <±0.5 %, from -55°C to +150°C

Breakdown Voltage (BV) 30V, 11V


0.1%/V (from 0 to RVDC)

Equivalent Series Inductor (ESL) Max 100 pH

Equivalent Series Resistor (ESR) Max 100 mΩ

Insulation resistance Min 100 GΩ @ 3V, 25°C

Aging Negligible, < 0.001% / 10000h

Reliability FIT<0.017 parts / billions hours

Capacitor height Max 100 µm(*)


Pad finishing in Aluminum. Other finishing available such as copper, nickel or gold. Applicable for almost all embedded applications.

Tape and reel, tray, waffle pack or wafer delivery

Key Features

Ultra Low profile 100 µm

High stability (temperature, voltage and ageing)

Low ESL and ESR

Low leakage current

High reliability

(*) 80 µm thickness on request (**) Other values on request

IPDiA EMbedded Silicon Capacitors are designed to be compliant with the embedding process for printed circuit board and laminates. The EMSC can also be used with wire bond technologies. Thanks to the high robustness and performance of these silicon passive components, embedded processes are now reliable. The EMSC are available with thicknesses down to 80 μm and are the most appropriate solution for Chip On Board, Chip On Foil, Chip On Glass, Chip On Ceramic, flip chip and embedded applications.


IPDiA ETSC and EXSC Series are designed to be compliant with high temperature wire bond technologies with Aluminum pads for

Aluminum wedge bonding and gold pads on request for gold wire bonding. ETSC and EXSC Silicon Capacitors feature low profile (250

µm), low leakage current and high operating temperature (ETSC up to 200°C/ EXSC up to 250°C) with high stability with temperature,

voltage and negligible capacitance loss through aging. Applications include downhole and defense industries, decoupling, filtering, charge

pump, replacement of X8R and C0G dielectrics, and high reliability applications, mainly for Multi-Chip Module assemblies.


Capacitance tolerances ±15 %(*)



Temperature coefficient <±1,5 %, from -55°C to +250°C


Capacitance variation versus RVDC 0.1%/V (from 0 to RVDC)



Insulation resistance 50 GΩ min @ 3V, 25°C 10 GΩ min @ 3V, 250°C



Capacitor height Max 250 µm


Key Features

Ultra High operating temperature - ETSC: up to 200°C - EXSC: up to 250°C

Low profile (250 µm)

High stability (Temperature, Voltage and ageing)

Low leakage current

High reliability


Pad finishing in Aluminum. Other finishing available such as copper, nickel or gold.



High / Extreme Temperature wire bondable Silicon Capacitors up to 250°C (ETSC, EXSC)

High Stability and reliability Silicon Capacitors (JEDEC/EIA compatible) (HSSC)

IPDiA High Stability Silicon Capacitors avoid the need to oversize the capacitor value for sensitive capacitive circuitry and offer a higher

DC voltage stability. The PICS technology developed by IPDiA provides outstanding capacitor stability over the full operating voltage &

temperature ranges. The very high and stable insulation resistance of silicon capacitors can improve battery lifetime up to 30% in mobile

applications.

Parameters Value

Capacitance range 10 pF to 3.3 µF(*)

Capacitance tolerances ±15%(*)




Breakdown Voltage (BV) 11VDC or 30VDC


Equivalent Series Inductor (ESL) Max 100 pH (*)

Equivalent Series Resistor (ESR) Max 200 mΩ(*)

Insulation resistance 100 GΩ min @ 3V, from –55°C to + 150°C





Lead-free nickel/solder coating compatible with automatic soldering technologies (reflow and manual). Other terminations available on request.

Tape and reel, tray, waffle pack or wafer delivery.

Key Features

Ultra High stability (temperature, voltage, ageing)

Low leakage current (high insulation resistance)

Very low ESR and ESL

Negligible capacitance change with temperature variation

Low profile



BV 30V

BV 11V

Low Profile Silicon Capacitors 80 µm thick (LPSC)

IPDiA 3D Silicon Capacitors target antenna matching, RF filtering and decoupling of active dies, in applications with height and volume constraints. The LPSC offer low profile (100 µm thin, 80 µm on request), with very high stability upon applied voltage, up to 150°C, with very low leakage current and high level performances dedicated to industries such as Smart Card, RFID tags, medical and others where integration plays a key role. The LPSC product family is split into two series:

the LPSC range from 10 pF to 3.3 µF, suitable for embedded technologies, modules, system in package, when designers are

looking for utmost decoupling behaviours;

and the LPSC ESD Enhanced range from 10 pF up to 330 pF that works efficiently and durably in RFID environments. Thanks to

the full modeling of the elementary cell, the ESD capabilities have been optimized up to 8 kV (see Key Features below). Furthermore, our RFID Silicon capacitor range has been fine tuned in order to reach SRF higher than 1.2 GHz, hence allowing unique fine tuning of the antenna, from 13.56 MHz up to UHF (800/900 MHz) applications.

Key Features

Ultra low profile (100 µm, 80 µm on request)

High Q

Voltage stability

High ESD capabilities (ESD enhanced series): >1 kV for 47 pF >1.5 kV for 100 pF >8 kV for 330 pF

Low leakage current down to 100 pA

Low ESL and low ESR

SRF > 1.2GHz


Lead-free NiAu finishing compatible with wirebonding or leadframe soldering. Aluminum pads on request.

Wafers, on foil, sawn and grinded. Raw wafers. Tape and reel.

BV 30V

BV 11V

Parameters Value Capacitance range 10 pF to 3.3µF(*)


Operating temperature range -55°C to 150°C (*)



Breakdown Voltage 11VDC or 30VDC


Equivalent Series Inductor (ESL) Typ 200 pH (*)






Available parts. For other values, contact your IPDiA sales representative. (*) Other values on request

Wire Bondable vertical Silicon Capacitors (WBSC, WTSC, WXSC)

The Wire Bonding vertical Silicon Capacitors target RF High Power applications for wireless communication, radar and data

broadcasting systems. They are suitable for DC decoupling, matching network, and harmonic / noise filtering functions. They offer ultra

high stability of capacitance value with temperature, voltage, and aging. The Wire Bonding vertical range is available up to +150ºC

(WBSC), up to +200ºC (WTSC) and up to +250ºC (WXSC).

Key Features

Low profile 250 µm

Low leakage current

High stability (temperature and voltage)

Negligible capacitance loss through ageing

(*) Other values upon request


Can be directly mounted on the PCB using die bonding and wire bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu). Compatible with standard wire bonding assembly (ball and wedge)

Tape and reel, waffle pack, film frame carrier or raw wafer delivery


Parameters Value

Capacitance range 10 pF to 22 nF(*)

Capacitance tolerance ±15 % (*)

Operating temperature range -55 °C to 250°C (*)


Temperature coefficient <±1.5 %, from -55°C to +250°C <±1.0 %, from -55°C to +200°C <±0.5 %, from -55°C to +150°C

Parameters Value

Equivalent Series Inductor (ESL) Typ 50 pH

Equivalent Series Resistor (ESR) Typ 50 m

Insulation resistance 50 G min @ RVDC, 25°C 10 G min @ RVDC, 250°C


BV 450V

BV 150V

BV 50V

BV 30V

BV 11V

Wire Bondable vertical Low profile Silicon Capacitors (WLSC)

The WLSC low profile capacitors target RF High Power applications with height and volume constraints and can address wireless

communication, radar and data broadcasting systems. The WLSC is suitable for DC decoupling, matching network, and harmonic /

noise filtering functions. The unique technology of integrated passive devices in silicon developed by IPDiA, can solve most of the

problems encountered in demanding applications. These Si capacitors in ultra–deep trenches have been developed with a

semiconductor process which enables the integration of high capacitance density from 1.3 nF/mm² to 250 nF/mm² (with a breakdown

voltage of respectively 450 V to 11 V).

Key Features

Ultra low profile 100 µm

Low leakage current






Parameters Value Equivalent Series Inductor (ESL) Typ 50 pH Equivalent Series Resistor (ESR) Typ 50 m


Capacitor height Max 100 µm(*) (*) Other values upon request

Parameters Value Capacitance range 10 pF to 22 nF(*) Capacitance tolerance ±15 % (*) Operating temperature range -55 °C to 150°C (*) Storage temperature range -70°C to 165°C

Temperature coefficient 0 ±24 ppm/°C, from -55°C to +150°C


BV 450V

BV 150V

BV 50V BV 11V

BV 30V

High Temperature Silicon Capacitors (up to 200°C - JEDEC/EIA compatible) (HTSC)

Thanks to the unique IPDiA silicon capacitor technology, most of the problems encountered in demanding applications can now be

solved. High Temperature Silicon Capacitors are dedicated to applications where reliability up to 200 °C is the main parameter. The

capacitor integration capability (up to 250 nF/mm²) offers capacitance value similar to what is obtained with X7R dielectric, but with

better electrical performance than C0G/NP0 dielectrics at 200 °C. HTSC provides the highest capacitor stability ever reached over the

full temperature range -55 °C/+200 °C with a temperature coefficient lower than ±1%.

Parameters Value Capacitance range 10 pF to 3.3 µF (*) Capacitance tolerance ±15 % (*) Operating temperature range -55°C to 200°C (*) Storage temperature range -70°C to 215°C Temperature coefficient <±1 %, from -55°C to +200°C Breakdown Voltage (BV) 11VDC or 30VDC


0.1% /V (from 0 to RVDC)

Equivalent Series Inductor (ESL) Max 100 pH (*) Equivalent Series Resistor (ESR) Max 400 m

(*)


Ageing Negligible, <0.001% / 1000h

Reliability FIT <0.017 parts / billion hours


Key Features

Extended operating temperature range (up to 200°C) with low capacitance variation

High stability

High reliability

Low leakage current




Lead-free nickel/solder coating compatible with automatic soldering technologies (reflow and manual). Other terminations available upon request.



BV 30V

BV 11V

Xtreme Temperature Silicon Capacitors (up to 250°C - JEDEC/EIA compatible) (XTSC)

The Xtreme Temperature Silicon Capacitors are ideal for applications subject to extreme conditions up to 250 °C. For instance, XTSC

range offers a 1 µF in 1206 with a TC<±1.5% over the full -55 °C/+250 °C temperature range. Ageing, stability of insulation resistance

and capacitor value have been optimized to obtain the best product for Hi-Rel applications.

Key Features

Extended operating temperature range (up to 250 °C) with low capacitance variation

High stability

High reliability

Low leakage current




Parameters Value

Capacitance range 10 pF to 3.3 µF (*) Capacitance tolerance ±15 % (*) Operating temperature range -55°C to 250°C (*) Storage temperature range -70°C to 265°C Temperature coefficient <±1,5 %, from -55°C to +250°C Breakdown Voltage (BV) 11VDC or 30VDC




(*)








BV 30V

BV 11V

Wire Bondable vertical Silicon Capacitors (WBSC, WTSC, WXSC)

The Wire Bonding vertical Silicon Capacitors target RF High Power applications for wireless communication, radar and data

broadcasting systems. They are suitable for DC decoupling, matching network, and harmonic / noise filtering functions. They offer ultra

high stability of capacitance value with temperature, voltage, and aging. The Wire Bonding vertical range is available up to +150ºC

(WBSC), up to +200ºC (WTSC) and up to +250ºC (WXSC).

Key Features

Low profile 250 µm

Low leakage current





Can be directly mounted on the PCB using die bonding and wire bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu). Compatible with standard wire bonding assembly (ball and wedge)

Tape and reel, waffle pack, film frame carrier or raw wafer delivery


Parameters Value

Capacitance range 10 pF to 22 nF(*)

Capacitance tolerance ±15 % (*)

Operating temperature range -55 °C to 250°C (*)


Temperature coefficient <±1.5 %, from -55°C to +250°C <±1.0 %, from -55°C to +200°C <±0.5 %, from -55°C to +150°C

Parameters Value

Equivalent Series Inductor (ESL) Typ 50 pH

Equivalent Series Resistor (ESR) Typ 50 m



BV 450V

BV 150V

BV 50V

BV 30V

BV 11V

Wire Bondable vertical Low profile Silicon Capacitors (WLSC)

The WLSC low profile capacitors target RF High Power applications with height and volume constraints and can address wireless

communication, radar and data broadcasting systems. The WLSC is suitable for DC decoupling, matching network, and harmonic /

noise filtering functions. The unique technology of integrated passive devices in silicon developed by IPDiA, can solve most of the

problems encountered in demanding applications. These Si capacitors in ultra–deep trenches have been developed with a

semiconductor process which enables the integration of high capacitance density from 1.3 nF/mm² to 250 nF/mm² (with a breakdown

voltage of respectively 450 V to 11 V).

Key Features

Ultra low profile 100 µm

Low leakage current






Parameters Value Equivalent Series Inductor (ESL) Typ 50 pH Equivalent Series Resistor (ESR) Typ 50 m


Capacitor height Max 100 µm(*) (*) Other values upon request

Parameters Value Capacitance range 10 pF to 22 nF(*) Capacitance tolerance ±15 % (*) Operating temperature range -55 °C to 150°C (*) Storage temperature range -70°C to 165°C

Temperature coefficient 0 ±24 ppm/°C, from -55°C to +150°C


BV 450V

BV 150V

BV 50V BV 11V

BV 30V

High Temperature Silicon Capacitors (up to 200°C - JEDEC/EIA compatible) (HTSC)

Thanks to the unique IPDiA silicon capacitor technology, most of the problems encountered in demanding applications can now be

solved. High Temperature Silicon Capacitors are dedicated to applications where reliability up to 200 °C is the main parameter. The

capacitor integration capability (up to 250 nF/mm²) offers capacitance value similar to what is obtained with X7R dielectric, but with

better electrical performance than C0G/NP0 dielectrics at 200 °C. HTSC provides the highest capacitor stability ever reached over the

full temperature range -55 °C/+200 °C with a temperature coefficient lower than ±1%.

Parameters Value Capacitance range 10 pF to 3.3 µF (*) Capacitance tolerance ±15 % (*) Operating temperature range -55°C to 200°C (*) Storage temperature range -70°C to 215°C Temperature coefficient <±1 %, from -55°C to +200°C Breakdown Voltage (BV) 11VDC or 30VDC




(*)





Key Features

Extended operating temperature range (up to 200°C) with low capacitance variation

High stability

High reliability

Low leakage current







BV 30V

BV 11V

Xtreme Temperature Silicon Capacitors (up to 250°C - JEDEC/EIA compatible) (XTSC)

The Xtreme Temperature Silicon Capacitors are ideal for applications subject to extreme conditions up to 250 °C. For instance, XTSC

range offers a 1 µF in 1206 with a TC<±1.5% over the full -55 °C/+250 °C temperature range. Ageing, stability of insulation resistance

and capacitor value have been optimized to obtain the best product for Hi-Rel applications.

Key Features

Extended operating temperature range (up to 250 °C) with low capacitance variation

High stability

High reliability

Low leakage current




Parameters Value

Capacitance range 10 pF to 3.3 µF (*) Capacitance tolerance ±15 % (*) Operating temperature range -55°C to 250°C (*) Storage temperature range -70°C to 265°C Temperature coefficient <±1,5 %, from -55°C to +250°C Breakdown Voltage (BV) 11VDC or 30VDC




(*)








BV 30V

BV 11V

Wire bondable and EMbedded low profile Silicon Capacitors (EMSC)


Capacitance tolerances ±15 %(**)






0.1%/V (from 0 to RVDC)








Pad finishing in Aluminum. Other finishing available such as copper, nickel or gold. Applicable for almost all embedded applications.


Key Features

Ultra Low profile 100 µm

High stability (temperature, voltage and ageing)

Low ESL and ESR

Low leakage current

High reliability

(*) 80 µm thickness on request (**) Other values on request

IPDiA EMbedded Silicon Capacitors are designed to be compliant with the embedding process for printed circuit board and laminates. The EMSC can also be used with wire bond technologies. Thanks to the high robustness and performance of these silicon passive components, embedded processes are now reliable. The EMSC are available with thicknesses down to 80 μm and are the most appropriate solution for Chip On Board, Chip On Foil, Chip On Glass, Chip On Ceramic, flip chip and embedded applications.


IPDiA ETSC and EXSC Series are designed to be compliant with high temperature wire bond technologies with Aluminum pads for

Aluminum wedge bonding and gold pads on request for gold wire bonding. ETSC and EXSC Silicon Capacitors feature low profile (250

µm), low leakage current and high operating temperature (ETSC up to 200°C/ EXSC up to 250°C) with high stability with temperature,

voltage and negligible capacitance loss through aging. Applications include downhole and defense industries, decoupling, filtering, charge

pump, replacement of X8R and C0G dielectrics, and high reliability applications, mainly for Multi-Chip Module assemblies.





Temperature coefficient <±1,5 %, from -55°C to +250°C





Insulation resistance 50 GΩ min @ 3V, 25°C 10 GΩ min @ 3V, 250°C





Key Features

Ultra High operating temperature - ETSC: up to 200°C - EXSC: up to 250°C

Low profile (250 µm)

High stability (Temperature, Voltage and ageing)

Low leakage current

High reliability


Pad finishing in Aluminum. Other finishing available such as copper, nickel or gold.



High / Extreme Temperature wire bondable Silicon Capacitors up to 250°C (ETSC, EXSC)

High Stability and reliability Silicon Capacitors (JEDEC/EIA compatible) (HSSC)

IPDiA High Stability Silicon Capacitors avoid the need to oversize the capacitor value for sensitive capacitive circuitry and offer a higher

DC voltage stability. The PICS technology developed by IPDiA provides outstanding capacitor stability over the full operating voltage &

temperature ranges. The very high and stable insulation resistance of silicon capacitors can improve battery lifetime up to 30% in mobile

applications.

Parameters Value

Capacitance range 10 pF to 3.3 µF(*)

Capacitance tolerances ±15%(*)




Breakdown Voltage (BV) 11VDC or 30VDC


Equivalent Series Inductor (ESL) Max 100 pH (*)


Insulation resistance 100 GΩ min @ 3V, from –55°C to + 150°C





Lead-free nickel/solder coating compatible with automatic soldering technologies (reflow and manual). Other terminations available on request.


Key Features

Ultra High stability (temperature, voltage, ageing)

Low leakage current (high insulation resistance)


Negligible capacitance change with temperature variation

Low profile



BV 30V

BV 11V

Low Profile Silicon Capacitors 80 µm thick (LPSC)

IPDiA 3D Silicon Capacitors target antenna matching, RF filtering and decoupling of active dies, in applications with height and volume constraints. The LPSC offer low profile (100 µm thin, 80 µm on request), with very high stability upon applied voltage, up to 150°C, with very low leakage current and high level performances dedicated to industries such as Smart Card, RFID tags, medical and others where integration plays a key role. The LPSC product family is split into two series:

the LPSC range from 10 pF to 3.3 µF, suitable for embedded technologies, modules, system in package, when designers are

looking for utmost decoupling behaviours;

and the LPSC ESD Enhanced range from 10 pF up to 330 pF that works efficiently and durably in RFID environments. Thanks to

the full modeling of the elementary cell, the ESD capabilities have been optimized up to 8 kV (see Key Features below). Furthermore, our RFID Silicon capacitor range has been fine tuned in order to reach SRF higher than 1.2 GHz, hence allowing unique fine tuning of the antenna, from 13.56 MHz up to UHF (800/900 MHz) applications.

Key Features

Ultra low profile (100 µm, 80 µm on request)

High Q

Voltage stability

High ESD capabilities (ESD enhanced series): >1 kV for 47 pF >1.5 kV for 100 pF >8 kV for 330 pF

Low leakage current down to 100 pA

Low ESL and low ESR

SRF > 1.2GHz


Lead-free NiAu finishing compatible with wirebonding or leadframe soldering. Aluminum pads on request.

Wafers, on foil, sawn and grinded. Raw wafers. Tape and reel.

BV 30V

BV 11V

Parameters Value Capacitance range 10 pF to 3.3µF(*)


Operating temperature range -55°C to 150°C (*)



Breakdown Voltage 11VDC or 30VDC


Equivalent Series Inductor (ESL) Typ 200 pH (*)






Available parts. For other values, contact your IPDiA sales representative. (*) Other values on request

IPDiA silicon capacitors are the best choice for all demanding applications in medical, automotive, communication, industrial and high reliability market such as downhole, defense/aerospace. IPDiA portfolio includes silicon capacitors from pF to tens of µF and is composed of:

Low Profile Capacitor < 80 µm thin for

decoupling inside critical space application

such as IC decoupling, MOS sensor,

broadband modules, RFID;

High Temperature Capacitor up to 250°C with

very high stability;

Ultra Broadband Capacitor up to 67 GHz;

High Reliability Medical and Automotive Grade

Capacitor.

IPDiA product ranges reflect

the benefits

of our

disruptive technology

Please refer to our website www.ipdia.com to get the latest versions of our commercial and technical leaflets. Please download the assembly instructions on www.ipdia.com/assembly and read them carefully before use.

IPDiA operates design centers, sales and marketing offices and a manufacturing facility of 10 000 m2 (110000 ft

2) certified

ISO 9001 / 14001, ISO TS16949 for the automotive market as well as ISO 13485 for medical devices.

Broadband and Ultra Broadband surface mounted Silicon Capacitors up to 67 GHz+ (UBSC, ULSC)



(**) e.g. 100 nF/0402/BV 11V

UBSC/ULSC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data

systems. These ultra broadband capacitors are optimized for DC blocking, feedback, coupling and bypass applications in ultra broadband

applications. They offer low insertion loss, low reflection and unique phase stability. The UBSC/ULSC capacitors provide very high

capacitance stability over temperature (±0.5%) and voltage. These capacitors are available from 16 kHz to 67 GHz+ for the UBSC and to

20 GHz for the ULSC. They are fully compatible with high speed automated pick-and-place manufacturing operations and are available

with ENIG termination.

Key Features


Resonance free

Phase stability


Low ESL

High reliability


Lead-free nickel/solder coating compatible with automatic soldering technologies: reflow and manual. Other top finishings available on request (ex: lead-free bumping - SAC305 type6)



Equivalent Series Inductance (ESL) Max 100 pH(**) @ SRF


(**)


UBEC/ULEC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data

systems or products. The UBEC/ULEC are optimized for DC decoupling and bypass applications. They offer high rejection up to 67

GHz+ for the UBEC and up to 20 GHz for the ULEC. The UBEC/ULEC capacitors also provide very high capacitance stability over

temperature (±0.5 %) and voltage. These capacitors are compatible with standard wire bonding assembly (ball and wedge). Top

electrodes are in 3µm Aluminum (Al/Si/Cu).

Broadband and Ultra Broadband Embedded Silicon Capacitors up to 67 GHz+ (UBEC, ULEC)

Key Features


Resonance free

Phase stability


Low ESL

High reliability


Can be directly mounted on the PCB using die bonding and wire bonding(s). Capacitors with top electrodes in 3 µm Aluminum (Al/Si/Cu). Other top finishings available on request (ex: Ti/Cu/Ni/Au). Compatible with standard wire bonding assembly (ball and wedge).



(*) Other values on request.

(**) e.g. 100nF/0404/BV 11V


Equivalent Series Inductance(ESL) Max 50 pH(**) @ SRF


(**)

Insulation resistance 100 G min @ RVDC, +25°C Aging Negligible, < 0.001 %/1000 h Reliability FIT<0.017 parts/billion hours Capacitor height Max 100 µm


IPDiA 3D Silicon Capacitors

the Best Choice for all Demanding Applications

IPDiA high-density silicon capacitors have been developed with a semiconductor MOS process and are using the third dimension to substantially increase the capacitor surface and thus its capacitance without increasing the capacitor footprint. IPDiA technology is based on a monolithic structure embedded in a monocristalline substrate (mono MIM and multi MIM).

Capacitance variation vs DC biasing voltage (for SiCap and MLCC technologies)

Capacitance variation vs temperature

(for SiCap and MLCC technologies)

A reliability 10 times better than MLCCs Coming from the same DNA as the semiconductor MOS process, IPDiA capacitors have a default mode fully modelized with proven consistent data and offer therefore predictable and exceptional reliable performances. Our SiCap technology features high reliability - up to 10 times better than alternative capacitor technologies – mainly obtained thanks to the highly pure oxide generated during the high temperature curing. Furthermore, all electrical tests are completed at the end of the production steps which avoids any early failure.

Higher reliability in a smaller package This advanced 3D topology gives a developed area equivalent to 80 ceramic layers in an amazing 80 μm thickness of active capacitance area. Thanks to a very linear and low dispersive dielectric, miniaturization, capacitance value and electrical performances are optimized.

Ultra large-band Wire bondable vertical Silicon Capacitors > 26 GHz (UWSC)

UWSC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data

systems or products. The UWSC are optimized for DC decoupling and bypass applications. They offer high rejection at > 26 GHz. The

UWSC capacitors also provide very high capacitance stability over temperature (±0.5 %) and voltage. These capacitors are compatible

with standard wire bonding assembly (ball and wedge). The bottom electrode is in Ti/Ni/Au and the top electrode is in Ti/Cu/Ni/Au.

Key Features

Ultra large band performance higher than 26 GHz

Resonance free and phase stability

Unique capacitance value of 1 nF in 0101


Ultra low ESR and ESL and high reliability


(**) e.g. 10nF/0303/BV 50V





Parameters Value

Equivalent Series Inductance(ESL) typ 6 pH (**) @ SRF

Equivalent Series Resistance(ESR) typ. 14 m(**)



Parameters Value Capacitance range 10 pF to 100 nF(*) Capacitance tolerance ± 15 %(*) Operating temperature range -55 °C to 150 °C Storage temperature - 70 °C to 165 °C Temperature coefficient <±0.5 %, from -55 °C to +150 °C Breakdown voltage (BV) 11 V, 30 V, 50 V, 150 V, 450 (**) Capacitance variation versus RVDC 0.02 %/V (from 0 V to RVDC)

High Temperature Automotive Silicon Capacitors up to 200°C (ATSC)

The ATSC capacitors target Under-the-Hood electronics and all sensors exposed to harsh conditions in the automotive market segment.

These automotive grade capacitors are optimized for decoupling functions. They are manufactured in IPDiA ISO-TS 16949 certified

facility, under AEC-Q100 conditions up to 200ºC.


Pad finishing in Aluminum (3 µm thickness +/-10%). Applicable for high temperature wirebonding and other mountings

Tape and reel, waffle pack or wafer delivery.

Key Features

Qualified according to AEC-Q100

Ultra long life @ 200°C


16 V operating voltage

Load dump

8 kV HBM ESD

Suitable for high temperature leadframe mounting



Parameters Value

Equivalent Series Inductance (ESL) Typ 500 pH

Equivalent Series Resistance (ESR) Typ 0.1

Insulation resistance 50 G min @ RVDC, +25°C

20 G min @ RVDC, +200°C

Aging Negligible, < 0.001 %/10 000 h

Reliability FIT<0.017 parts/billion hours

Capacitor height 250 µm typ(*)

Parameters Value

Capacitance range 1 nF to 100 nF(*)

Capacitance tolerance ±15 %

Operating temperature range -55 to 200 °C

Storage temperature - 70 to 215 °C

Temperature coefficient ±1 %, from -55 to +200°C

Breakdown Voltage (BV) 30 V


0.1 %/V (from 0 V to RVDC)

www.ipdia.com

3D Silicon Capacitors

HSSC - High Stability and reliability Capacitors LPSC - Low Profile Capacitors 80 µm thick HTSC - High Temperature Capacitors up to 200°C XTSC - Xtreme Temperature Capacitors up to 250°C WBSC / WTSC / WXSC - Wire Bondable vertical Capacitors WLSC - Wire bondable vertical Low profile Capacitors EMSC - Wire bondable and EMbedded low profile Capacitors ETSC / EXSC - High / Extreme Temperature wire bondable Capacitors up to 250°C UBSC / ULSC - Broadband and Ultra Broadband surface mounted Capacitors up to 67 GHz+ UBEC / ULEC - Broadband and Ultra Broadband Embedded Capacitors up to 67 GHz+ UWSC - Ultra large-band Wire bondable vertical Capacitors > 26 GHz ATSC - High Temperature Automotive Capacitors up to 200°C

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

To contact us, email to: [email protected]

Date of release:01/03/2016 Rev 2.0

Document ID: Product Line Leaflet

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3D Silicon Capacitors - Trendsetter Electronics ... · IPDiA 3D Silicon Capacitors ... dimension to substantially increase the capacitor surface and thus its capacitance without increasing