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Gas Cluster Ion Beam Equipment Prof. Isao YAMADA (Kyoto University) nFusion™ 500 Series TEL EPION INC. GCIB System Characteristics & Applications of GCIB Defining Aperture Gas Cluster : (Ar)n, (O 2 )n, (CO 2 )n, (SF 6 )n, (N 2 )n ・・・・・・ n~2000 Patent status & Patent owner contact Patent No. : USP5459326; 5814194; 6207282; 6797334; 6797339 Patent owner contact: Masaru OZAKI (JST) Tel:+81-3-5214-8477, e-mail: [email protected] 300mm Si Wafer Ultra shallow doping Modification of surface structure & composition Co-incident doping of multiple species Atomic level surface smoothing Asperity removal Directional etching Assisted deposition of thin films

300mm Si Wafer - JST

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Page 1: 300mm Si Wafer - JST

Gas Cluster Ion Beam EquipmentProf. Isao YAMADA (Kyoto University)nFusion™ 500 Series

TEL EPION INC.

GCIB SystemCharacteristics & Applications of GCIB

Defining Aperture

Gas Cluster :(Ar)n, (O2)n, (CO2)n, (SF6)n, (N2)n ・・・・・・

n~2000

Patent status & Patent owner contactPatent No. : USP5459326; 5814194; 6207282; 6797334; 6797339Patent owner contact: Masaru OZAKI (JST)

Tel:+81-3-5214-8477, e-mail: [email protected]

300mm Si Wafer

Ultra shallow dopingModification of surface structure & compositionCo-incident doping of multiple speciesAtomic level surface smoothingAsperity removalDirectional etchingAssisted deposition of thin films