3001 Elecs Summary

7/28/2019 3001 Elecs Summary

1/22

CHAPTER1Hans Oersted Relationship of magnetism and electricity that served as the

foundation of theory for electromagnets

Most important electrical effect is the magnetic effect

Michael Faraday Theory of electromagnetic inductionCurrent Carrying conductor would move when placed in a

magnetic field

James Maxwell Electromagnetic Theory of lightAndre Ampere Demonstrated that there are magnetic effects around every

current carrying conductor and that these conductors act like a

magnet

Kamerlingh Onnes SuperconductivityFaradays Law Whenever a conductor cuts a magnetic flux, an emf is induced

in itFaradays 1st Law The magnitude of induced emf is directly proportional to therate of change of flux linkages

Faradays 2nd Law Whenever the flux linking a coil or current changes, an emf isinduced in it

Coulumbs 1st Law Force between 2 magnetic poles is directly proportional to theirstrengths

Coulumbs 2nd Law Force between 2 magnetic poles id inversely proportional to thedistance between them

Childs Law Current in a thermionic diode varies directly with the threehalves power of anode voltage and inversely with the square of

distance between the electrodes

Wiedmann-FranzLaw

Ratio of the thermal conductivity to the electric conductivity is

directly proportional to the absolute temp for all metals

Curies Law The magnetic susceptibilities of most paramagnetic materialsare inversely proportional to their absolute temperatures

Curie-Weiss Law Law relating the M and E susceptibilities and the absolutetemperature

Ewings theory ofFerromagnetism

Theory of ferromagnetic phenomena which assumes each atom

is a permanent magnet which can turn freely about its center

under the influence of applied fields and magnets

Amperes Theorem States that a current flowing in a circuit produces a magneticfield at external points equivalent to that due to a magnetic

shell whose bounding edge is the conductor and whose

strength is equal to the strength of current

Right hand rule Also called corkscrew ruleEnd Rule If looking at any one end of a solenoid, the direction of current

is found to be clockwise then the end under observation is a


2/22

south pole

Helix Rule If a solenoid is held by the right hand with the fingers pointingto the direction of the current flow, the outstretched thumb will

point to the north pole

Unit Pole A pole which when placed in air from a similar and equal polerepels it with a force of 1/4pi newtonsMagnetic Pole Point in a magnet where the intensity of the magnetic lines offorce is max

Magnetic Axis Straight Line passing through 2 poles of a magnetDia UrUo ; aluminum, platinum, manganese, chromium,oxygen

Greatest % of materials

Ferro Ur>>1 U>>Uo ; cobalt10^-10 m Diameter of atom10^-15 to 10^-16m

Diameter of atomic nucleus

1.1 x 10^-8 cm Diameter of Hydrogen AtomPermeance Reciprocal of Reluctance / Analogous to conductanceCoercivity Amount of magnetizing force to counter balance the residual

magnetism

Leakage Factor Ratio of flux in iron to flux in air (iba iba yung tawag sa book atsa coaching)

IntensityMagnetism

The flux density produced in it due to its own magnetism

Hysteresis Lag between B and HFerrites Non metallic materials that have ferromagnetic propertiesAir Gap Air space between magnetsKeeper Used to maintain the strength of magnetic fieldMoving electricalcharge

Where all magnetic field originates from

Stationary ElectricalCharges

Magnetic field does not interact with this

Uniform Magnetic field inside a solenoidCurrent CarryingWire Loop

Resembles the magnetic field of a bar magnet

North A current is flowing east along a power line. If the earths fieldis neglected, the direction of the magnet below it is

revolution When a wire loop is rotated in a magnetic field, the direction ofthe induced emf changes every

Domain Group of magnetically aligned atoms


3/22

Toroid Electromagnet with its core is in the form of a close magneticring

Hall effect Small voltages generated by a conductor with current in anexternal magnetic field

Effect which is generally used in the gaussmeter to measureflux density

Edison effect Emission of e- from hot bodiesWiegand effect Ability of a mechanically stressed ferromagnetic wire to

recognize rapid switching of magnetization when subjected by

a dc magnetic field

Wall Effect Contribution to the ionization in an ionization chamber by e-from the walls

Bridgman effect Phenomenon when current passes through an aristropic crystal,there is an absorption of heat due to the non uniformity in

current distributionHydrogen Simples atom to exist; it is a diamagnetic materialGermanium 32p+, 32e- and 40n = 72Ge32 =

(AtomicWeightGeAtomicnumber)

Atomic Mass Sum of proton and neutrons (di ko sure pero eto nakalagay e)Atomic Number # of protons or # of electrons72.6 Ge exact atomic weight28.09 Si exact atomic weight at 300K# of protons Determines the atomic # of an elementCopper 34nMetallic bonding Atom bonding due to the force of attraction between groups of

+ ion and ion

Motor Action Physical motion resulting from the forces of magnetic fieldFlux linkages = flux x # of turnsElectron Volt (eV) Customary energy unit in atomic and nuclear physicsJoule, Watt-sec,KW-h

Units of electrical energy

KW-h Practical unit for electrical energyIon An atom or group of atoms carrying a net electrical chargeThermionicemission

Evaporation of e- from a heated surface

Amber Greek word for electronPlasma Charged GasesExclusion Principle Principle that states that each e- in an atom must have a

different set of quantum numbers

Pauli ExclusionPrinciple

Principle that states that only 2 e- with differebt spins are

allowed to exist in a given orbit

Radio Freq Common application if an air-cored choke


4/22

Ohms Law For linear circuits (AC,DC)Crystalline Solid One of the solid structures in which the position of the atoms

or ins are predetermined

Amorphous Solid with no defined crystal structure; also called non-crystalline

Permits mechanicalClearance Reason for air gaps between rotor and statorVan der Waals Bond Formed when there exist distant electronic interaction between

opposite charges present in the neighboring atoms or

molecules

Atomic PackingFactor

Measures compactness of crystal = atom volume/cell volume

Madelung Constant Corrects the electrostatic forces of the more distant ions in anionic solid

Creepage Conduction of electricity across the surface of a a dielectricAurora Corona discharge1.15 to 1.25 Leakage coef for electrical machinesAstrionic Science of adapting electronics to aerospace flightAir Has straight BH curve passing through the originSoft iron BH curve not straightUsing material withnarrow hysteresisloop

Reduces hysteresis loss

Silicon steel Least hysteresis loop areaUnlimited # of compounds in natureOhm-m SI unit for specific resistanceSiemens / Mhos SI / CGS for conductanceSiemens/m SI for conductivityResistivity Temperature

For Conductors

2 Wb/m^2 Typical saturation flux density for most magnetic materialsinsulators Temp coefficient of resistance is NEGATIVE;

Temp coefficient of resistance is directly proportional to T;

R is inversely proportional to T

semiconductors Temp coefficient resistance is NEGATIVEconductors Temp coefficient resistance is POSITIVE;

Temp coefficient of resistance is inversely proportional to T;

R is directly proportional to T

Temp coefficientresistance

Dependent on nature and temp of material

Tells how much the R changes for a change in T

+ temp coef Manganin, Tungsten Filament- temp coef Electrolytes, carbon.0034 Temp coef of resistance of pure gold


5/22

.0038 Temp coef of resistance of silver

.0039 Temp coef of resistance of leadAlmost 0 Eurekas Temp coefficient resistanceSilicon Carbibe Ohms law cannot be applied to this material10x Hot R = ___x Cold RNeutral A body under ordinary conditionsDielectric constantorSpecific InductiveCapacity

Another name for relative permitivitty

BreakdownVolatage

Another name fore Dielectric Strength (V/mil)

Magneticconductivity

Another name for permeability

1/(oo) = c2 Relationship of Eo and Uo and c (light velocity)1 and 10 Dielectric constant of most materialsMica Insulating material used in an electric ionPorcelain Insulating material used in voltage transformersEarphones Uses permanent magnetsMotors Uses temporary magnets

CHAPTER2+ to - Conventional Flow- to + Electron FlowW P true powerVAR Q reactive powerVA S apparent powerPower factor Cos = P/SReactive factor Sin = Q/SVoltageMagnification Factor

Q Factor of Series resonant circuit

CurrentMagnification Factor

Q factor of // Resonant Circuit

Voltage Resonance Series ResonanceCurrent Resonance Parallel ResonaceIonization Current Results from free electronsELI Series Resonace / Acceptor CircuitICE Parallel Resonance / Rejector CircuitELI by exactly 90deg

Pure inductance

ICE by exactly 90deg

Pure capacitance

ELI by less than 90deg

RL


6/22

ICE by less than 90deg

RC

Reactance = 0 If I and V are in phase for an AC circuit0.707 Current is ____ times the max current at half power points of a

resonance curve

Gang Capacitor Variable Capacitor which the C is varied by varying the platearea

Trimmer Capacitor A variable capacitor in which C is varied by changing distancebetween plates

55 ohm-cm Specific resistance of pure Ge60 ohm-cm Resistivity of pure Ge under standard conditions55 ohm-cm Specific resistance of pure SiLeading or Lagging Power factor of series RLC at its half power pointsLeading pf Capacitive LoadLagging pf Inductive LoadSeparation of thehalf power points Meaning of BW in series RLCEffective Value Most important value of a sinewaveFaradic current An intermittent and non symmetrical alternating current like

that obtained from the secondary winding of an induction coil

Stray Capacitance Capacitance that exists not through design but because 2conducting surfaces are relatively close to each other

1.73 Peak factor of a triangular waveTriangular Wave Peakiest waveformIndependent toeach other

Reason for // connection of appliances in homes

Appliances havedifferent currentratings

Reason why not in series connection of appliances in homes

Sinusoidal Most popular waveformSquare wave Most common non sinusoidal waveformIdeal CurrentSource (parallel r)

Infinite internal resistance

Zero internal conductance

Ideal VoltageSource(series r)

Zero internal Resistance

Infinite internal conductance

Ideal Ammeter(in series to thecircuit)

R is 0

Ideal Voltmeter(in // to the circuit)

R is infinite

Resonance Curve Frequency VS CurrentReactance Chart Estimates the resonant freq and to find the reactance at any


7/22

freq for any value of C or I

Edge Effect Refers to the outward curving distortion of the lines of forcenear the edges of 2 // metal plates that form a capacitor

The narrower thepassband

(For Series RLC), the higher the Q

Internal Heating Leakage resistance in a capacitor results toPhase The_____ of an alternating quantity is defined as the fractionalpart of a period or cycle through w/c the quantity has advanced

from a selected origin

3.7K Metal tin becomes a superconductor at this tempIt has a varyingmagnetic field

Reason why AC can induce voltage

Exponential Law Charging of capacitor through a resistance obeys _______Sinewaves The factor 0.707 for converting peak to rms applies only to

_____

Joule Term to express the amount of electrical energy stored in aelectrostatic field

Breakdown Voltage Refers to the lowest voltage across any insulator that cancause current flow

Blocks DC current Capacitor47 ohms Preferred value of resistor (among the choices which are 520,

43K and 54K)

Electrolyticcapacitor

Most suited for dc filter circuits;

Highest cost per uF;

Only Capacitor used in DC circuits;

Used in Transistor amplifiers

Variable Capacitor Used air dielectricBarium StrontiumTitanite Dielectric

Also called ceramic

Surge Voltage Max voltage that can be applied across a capacitor for a shortperiod of time

Voltage It is used as the reference phasor for // AC circuitsIt has reactance inradio freq circuits

Disadvantage of wirewound resistors

Manganin Most common material for wirewoundTemp coef Indicated by the first band for a 5band method of capacitor

color coding

Rate at whichelectrons pas agiven point

Determines the magnitude of an electric current

Q of 10 Means that the energy stored in the magnetic field of the coil is10x the energy wasted in the resistance

770V Neon lamp ionizes at approx _____


8/22

AnticapacitanceSwitch

Switch designed to have low capacitance between terminals

when open

Bifilar Resistor Resister wound with a wire doubled back on itself to reduceinductance

Alloy Fusion of elements without chemical action between themVpeak Used in calculating max instantaneous powerVrms Used in calculating VaveMaximumcapacitance

Happened when movable plates of gang capacitor overlaps the

fixed plates

Thevenins Theorem Used for analysis of Vacuum tubesPhasor Rotating vector whose projection can represent either current

or voltage

CHAPTER31 # of e- in 4th orbit of copper atom8 e- Each atom in a Si Crystal has _____ in its valence orbit32 p+ Silicon Atom has ____More slowly e- in the largest orbit travel _______ than the e- in smaller

orbits

Intrinsicsemiconductor

Pure Semiconductor

Extrinsicsemiconductor

Doped semiconductor;

2 Ohm-cm = resistivity

2mV/C For Ge or Si diodes, the barrier potential decreases _____Piecewise LinearModel

A diode modeling circuit which considers the threshold voltage,

Rave and switch as the diodes equivalent

Diffusion and drift 2 mechanisms by which holes and electrons move through a Sicrystal

Diffusion Random motion due to thermal agitation in the movement ofh+ and e- in a Si crystal

Drift Current Happens when charges are forced to move the electric field ofa potential difference

Carrier Drift Mechanism for carrier motion in semiconZener and AvalanceEffects

Two possible breakdown mechanism in PN jxn diodes

Zener Breakdown Electric field in the depletion layer increases to the point whereit can break covalent bonds and generate electron-hole pairs

AvalancheBreakdown

(In semiconductors) this takes place when the reverse bias

exceeds a certain value;

Happens when the minority carriers that cross the depletion

region under the influence of the electric field gain sufficient KE

to be able to break covalent bonds in atoms

Avalance effect Occurs are higher reverse voltagesDiffusion or Storage Is the forward bias capacitance of a diode


9/22

CapacitanceLifetime Amount of time between the creation and disappearance of a

free electron

Recombination Annihilation of e- and h+;Merging of e- and h+

Transit time Time taken by e- or h+ to pass from emitter to collectorReverse recoverytime

Time taken by a diode to operate in the reverse to forward

condition;

Time it takes to turn off a FB diode;

= storage time + transition interval from F to R bias

Insulator At room temp, silicon acts like a ______Compound Semicon Gallium Arsenide, Alluminum Arsenide and Gallium Phosphide

are classified as ______-

Increase electricconductivity

Purpose of adding impurities

Ptype semicon Silicon doped with trivalent impurity;Holes are majority carriers

Ntype semicon Silicon doped with pentavalent impurity;Electrons are majority carriers

Trivalent Atom Acceptor Atom;Boron, Indium, Gallium,

Pentavalent Atom Donor Atom;Phosphorus, Arsenic, Antimony, Bimsuth

N type Forms when the # of free e- in a doped semiconductor isincreased;

Forms when pentavalent atom is added

P Type Forms when the # of free e- in a doped semiconductor isreduced

Forms when trivalent atom is added

PN crystal Other name for Jxn Diode;Commonly rated by its PIV and max forward current;

Max forward current is limited by Jxn Temperature

Dipole Each pair of + and ions at the jxn is called _____Barrier Potential Inversely proportional to tempHigh field emission Creation of free electrons through a zener effectIntensity of electricfield

Zener effect depends on this

Forward current Most impt diode parameter which gives the current value adiode can handle without burning

Reverse BreakdownVoltage

Maximum reverse voltage that can be applied before current

surges

Esaki Diode Tunnel Diode;Principal char is that it has negative resistance region;


10/22

Widely used in oscillators, switching networks and pulse

generators

Schotty Diode Most impt application is digital computersShocklet Diode No depletion layerBulk resistance Sum of the P and N regions resistances;

rB = (V-VT)/IVAristors Are transient suppressorsVaractor Diode Also known as epicap, varicap, voltage-variable capacitance,

voltacaps;

Used for tuning the Receivers and is normally operated at

reverse biased

Point Contact diode Used metal cat whiskers as its anode;Classified as hot carrier diode

PIN diode Used in RF switches, attenuators and other phase switchingdevices

Bulk resistancedecreases insemiconductors

If doping increases, ___________

High Resistance Lightly doped semiconductors have ____Less than 1 ohm Typical bulk resistance of rectifier diodesTransition regioncapacitance

The reverse bias diode capacitance is termed as ______

LED Equivalent to a optocoupler ;Typical operating current is 10mA;

Voltage drop is 1.5V;

Constructed using Gallium Arsenide;

Gives light when FB

LAD A photodiode which conducts current only when FB and isexposed to light;

Also called photodiode

IR emitters Solid state GaAs devices that emit a beam of radiant flux whenFB

Optocoupler Also known as optoisolatorSecondapproximation

(for diodes) an equivalent ckt of a diode in which it is

represented as a switch series with barrier potential

Third approximation (for diodes) an equivalent ckt of a diode in which it isrepresented as a switch in series with a resitanceNegative voltage

suppliesNeeded for PMP voltage divider bias

16.7 ms Halfwave signal (1/60Hz)8.33 ms Fullwave signal (1/120Hz)40.6% Max rectification efficiency of HW81.2 Max rectification efficiency of FW


11/22

MOSFET Highest Zin;Sometimes called Insulated Gate FET

FET Has least noise level;Has higher Zin compared to BJT due to its input which is

reverse biased

uA Typical leakage current in a PN jxnOhms Resistance of a FB PN jxnDerating Factor Shown on a data sheet that tells how much you have to reduce

the power of a device

Dember Effect Or Photodiffusion effect;The creation of voltage in a conductor or semicon by

illumination of one surface

Bulk Effect Effect that occurs within the entire bilk of a semiconductormaterial rather than a localized jxn

Skin Effect Increases the resistance of wires at high frequenciesAnotron Diode A cold cathode glow-discharge diode having a copper anode

and a large cathode of sodium or other material

BARITT Diode A microwave diode in which the carriers that transverse thedrift region are generated by minority carrier injection from a

FB jxn instead of being extracted from the plasma of avalanche

Spacistor Multiple terminal solid state device similar to transistor thatgenerates frequencies up to avout 10,000 Mhz by injecting e-

or h+ into a space charge layer

Zener Diode Principal char is that its voltage is constant under conditions ofvarying current;

Used as a voltage regulator or reference voltage

Voltage multiplier Converts AC to DC, where the DC output can be greater thanthe AC input

PhotoconductiveCell

Or Photoresitive device

Emitter Resistor Most commonly used for biasing a bipolar jxn transistorSilicon Not a good conductor;

Has the smallest leakage current

% Ripple = (Vac / Vdc) x 100Ripple Voltage = (rZ / (rZ+rS)) x VHoles As a general rule, _____ are found only on semiconductors;

An incomplete part of an electron pair bond;

Vacancy left by free electrons

Isotopes A nuclei with common # of p+ but different # of neutronsSeries Capacitors In power supplies, circuits that are employed in separating AC

and DC components and bypass AC components around the

load are called _______

Emitter Follower Av is low and usually less than 1;


12/22

Circuit Ai is High;input is in-phase with output;

Employs 100% negative feedback;

Used for impedance matching;

Equivalent to CC amplifier

BJT / transistors Current controlled device;Largest region is the Collector Region

FET Voltage controlled device;Has 5v pinch off voltage;

FET transcoductance = IC/VGS ;

Square Law Devices;

At cut-off, the depletion layers are touching

Transistors Converts DC power to AC powerPower Transistors Made in large sized to disspate more heatPower amplifiers Input is DCOscillators Converts DC power to AC powerOhmic Equivalent if transistor at saturation in JFET is ______IGFET Another name for MOSFETCMOS Easily damaged by static chargesSaturation region Used by FET (EMOSFET) to act as an amplifierTriode region andSaturation Region

Used by FET (EMOSFET) to act as a switch

10uF Coupling capacitor value in RC coupling;Coupling capacitor (Cc) must be high enough to prevent

attenuation of low freq

Qpoint /OperatingPoint

Point of intersection between a diode characteristic and a load

line;

Intersection of dc and ac load lines

Luminous Efficacy Measure of the ability of any LED to produce lumens perapplied watt of energy

Scale Current Another name is Saturation CurrentInput Char Curve A graphical representation in a transistor where the IE is

plotted against the variable VEB for constant VCB

Output Char Curve A graphical representation in a transistor where the Ic is plottedagainst the variable VCB for constant IE

RC coupling Used in low level, low noise audio amplifiers to minimize humpick up from stray magnetic fieldsTransformer

CouplingMajor advantage is permitting power to be transformed from

the relatively high output impedance of the first stage to the

relatively low input impedance of second stage

1.12eV(Si) and0.72eV(Ge)

From these conditions, it can be said that less # of electron-

hole pair will be generated in Si than in Ge

0.135 m2/V-s Electron mobility in silicon


13/22

Harold Black Invented feedback amplifier in 1928Always points to Nand away from P

Arrows in semiconductor symbols

CE circuit Conventional amplifierJunction and PointContact

Structural category of a semiconductor diodes

Threshold Voltage Turns on an enhancement-deviceDMOSFET Acts mostly as a FET;

Can operate in D and E

EMOSFET Can only operate in EHeat dissipation Most important factor of a power transistorCollector Efficiency Most important consideration in power amplifiersDrift transistor Has a high frequency cut off due to its low inherent internal

capacitance and low electron transit time

Poor frequencyresponse

Results when transistors are used as video amplifiers

Fission Break up of nuclei into nuclear fragments that are nucleithemselves

Neutrino Zero charge and zero massEG => 5eV Energy gap for insulatorsEG = 1.1eV Energy gap for Si semiconductorsEG => 0.67eV Energy gap for Ge semiconductorsBound Electrons Tightly holds the 8 e-25mV Thermal Voltage at room temp;

Thermal voltage causes holes in intrinsic semiconsuctors

8.62 x 10^-5 eV/K Boltzman constantVoltage divider Bias Preferred form of biasing a FETVGS(OFF) = VGS(ON) For N-channel EMOSFETBeta CE gain

= IC/IB

Alpha CB gain= IC/IE CHAPTER4

Collector has reversebias

Reason why a transistor amplifier has high output impedance

Gain-BW product Considered as an amplifier figure of meritLogic probe In an oscilloscope, it is used to indicate pulse condition indigital logic circuit

Logic analyzer Used to sample and display systems signalOscillators Produces undamped oscillationsBiasing Establishes a fixed level of current or voltage in a transistorAF transformer It is shielded to prevent induction due to stray magnetic


14/22

fields

Amplitude Distortion Or harmonic distortionFrequency Ear is not sensitive to thisRC coupling To separate bias of 1 stage to another stage;

Used for voltage amplification;

Av is constant over mid frequencies;Most economic type of coupling;

Not used to amplify extremely low freq because electrical size

of the coupling capacitor becomes very large;

Type of coupling used in the initial stage of a multistage

amplifier;

Transformer coupling Used in power amplifiers;Provides high freq because DC resistance is low;

Used when load resistance is very low;

Type of coupling used in the final stage of an amplifier;

Introduces frequency distortion;

Most expensive type of coupling;

Provides high gain because it employs impedance matching;

Can be used either in Voltage or Power amplifiers

DC coupling Best freq response;Used to amplify dc signals in multistage amplifier;

Achieves minimum interference in freq response

Klystron Oscillator Used in order to produce freq in the microwave regionStep DownTransformer

Used for impedance matching;

It is also used as the output transformer in power amplifiers

Gives distortedoutput

Disadvantage of impedance matching

Campbell and Wagner Where the basic concept of electric wave filter originated10Khz Freq that produces highest noise factorCoupling Capacitor The input capacitor in an amplifierBigger AC load line slope is ____ then DC load line slopeAt least 2 transistors Used by multistage amplifierGenerator Outputlevel is kept constant

To obtain the frequency response curve of an amplifier

Relaxation oscillator Type of oscillator where the frequency is determined by thecharge and discharge of RC networks used in conjunction

with amplifiers or similar devicesGPS Instrument used to measure ones location in terms ofcoordinates

1/( 4(LC) ) Cutoff freq for constant-k high pass filterThe smaller the %VR The better!Thin base Transistor should have a _____ to have more AvDarlington Pair Its advantage is that it increases overall Beta Gain


15/22

Independent A feedback network is _______ of frequencyFeedback Networks They employ resistive networksPositive Feedback Employed by Oscillators;Negative Feedback Employed by amplifiers

Reduces distortion;

Reduces gain;Increases BW of an amplifier;

The sacrifice factor is (1+A)

Feedback factor () Is always less than 1;= (1/Af) (1/A)

= Vf / V

Approx gain of anamplifier withnegative feedback(Af)

Reciprocal of feedback factor;

= 1/

(A) in negativefeedback Very much greater than 1 to obtain good gain stabilityPower Again (Ap) = Av x Ai;

Main consideration in the output stage of an amplifier

Crossover network A pair of filter common on a high fidelity system whichseparates audio freq band signals into 2 separate groups

where one is fed to the tweeter and the other to the woofer

Armstrong circuit Simplest variable freq sinusoidal oscillator10uF Typical value of Coupling capacitor50uF Typical value of emitter bypass capacitor in a CE multistage

amplifier

Re, reand Input R of CE amplifier is affected by ________Out of phase (180deg)

Output is always _______ with the input signal in a CE

amplifier

Zero Phase difference between collector voltage and signal voltagein CE amplifier

Increase Av Purpose of emitter bypass capacitor in CE amplifier is to_____

LC oscillator Used only in/for high freqRC Oscillator Used only in/for low freqSine wave oscillator Composed of 1 or more amplifying devices with some freq

determining networks introducing + feedbackHartley Oscillator Used commonly in Radio RxCrystal Oscillator Used commonly in Radio Tx;

Fixed frequency oscillator;

Has fewer loses and will generate alternating emf longer than

LC circuit when shock excited

Tuned Amplifier Operated in Class C;


16/22

Used in Radio freq

Wien Bridge Oscillator Frequency stability of the oscillator output is maximum________;

Employs both + and feedback;

Used in signal generators in laboratories;

Hum in the circuit A pulsating DC applied to the power amplifier causes ______Low Output Important limitation of Crystal OscillatorHigh Q Reason why crystal oscillator freq is very stableMore than 10,000 Typical Q of a crystalPush Pull amplifer Commonly employed at the output stage of an amplifierX axis Cutting perpendicular to end to end;

Electrical axis;

Connects the corners of the crystal

Y axis Cutting perpendicular to face to face;Mechanical

+ temp coef When crystal freq increases with temp- temp coef When crystal freq decreases with tempZero temp coef When crystal freq doesnt change with tempMore batteryconsumption

Low efficiency of a power amplifier results in ______

Buffer Amplifier Used for minimum loading and minimum mismatchHand capacitance If you move towards an oscillating circuit, its freq changes

because of the ______

Ic becomes maximum When transistor is at saturationMaximum voltageappears acrosstransistor

When transistor is at cut-off

At minimum In an LC circuit, when the Capacitor energy is at max, theinductor energy is _____

AC load line The operating point in a transistor amplifier moves along______ when AC signal is applied

Power stage Also called output stage in an amplifierDC At zero signal conditions, a transistor sees _____ loadSum of AC and DC The current in any branch of a transistor amplifier that is

operating is the _____

CMRR = infinity For an ideal differential amplifierTo set up anoperating point

The purpose of dc conditions in a transistor is _____

To avoid drop in gain The purpose of an emitter capacitor is _____Collector Supply The Poutput of a transistor amplifier is more than the P input due

to the additional power supplied by _______

Low When a transistor feeds a load of low R, its Av is _____25% Max collector efficiency of Resistance Loaded Class A power


17/22

amp

50% Max collector efficiency of Transformer coupled Class A poweramp

RF amplifiers Class C amplifiers are used asDriver stage Employs class A amplifiers1NPN, 1PNPtransistor

Complementary-symmetry amplifier

Increases InputImpedance,Decreases OutputImpedance

Negative voltage feedback

Decreases InputImpedance,Increases OutputImpedance

Negative Current Feedback

ID The Quiescent current of a FET amplifier is _____AND gate The frequency response of the combined amplifier can be

compared with an ______

CHAPTER 6DArsnoval Best type of meter movementWattmeter A dynamometer type which has uniform scale;Dynamometer Most expensive;

Mainly used as wattmeter;

Can be used for AC or DC worksPermanent MagnetMoving CoilInstruments

Can only be applied to DC work only;

The reason why its scale is uniform is because it is spring

controlled;

Springs provide the controlling force;

Most sensitive instrument

Moving Ironinstruments

Considered as attraction and repulsion instruments;

Typical IFS is 50mA;

Typical VFS is 50mV;

Uses squared scale;

Induction watt-hrmeter

Most commonly used induction type of instrument

Watt-hour meter Is an integrating type of instrumenrRest When both deflecting and controlling torque act, the pointer

of an indicating instrument comes to ______

Deflecting force (for analog ins) Causes the moving system to deflect from itszero position

Controlling force (for analog ins) Ensures that the deflection of the pointer for


18/22

a given value of measured quantity always has the same

value

Damping force (for analog ins) Quickly brings the moving system to rest inits final position

Damping andControlling Torques

Opposes the deflecting torque

Damping torque iszero

If the pointer is in the final deflected position

Thermocouple Instrument where output voltage is proportional to thetemperature;

An ammeter used to measure high freq currents

Thermistor Type of resistor used to measure temp changes with changein resistance

Never When should a fuse be replaced by a higher rated unit?Pulse width Time interval that a waveform is High or low is _____ of the

signalPulse delay Time delay between pulsesPeriod The interval of a pulse from start to endCRT Heart of CRO (cathode ray oscilloscope)Wheatstone Bridge Measures resistance accurately;

Balanced if there is no current the flows through the load;

R1/R2 = R3/R4

Potentiometer Bridge Measures Voltage accuratelyMaxwell Bridge Measures unknown inductance with in terms of known

capacitance;

Used to measure medium coils (1


19/22

measurements.

Grid-dip meter Measures tank circuit frequencyMilliamter Operates in the magnetic attraction-repulsion principlesMultimeter Provides RMS measurements for sinusoidsKelvin electrostaticmeter

Fluid friction damping is applied to _______

Negligible The temp coef of resistance of a shunt material is _____Manganin Shunts are generally made of ____Aluminum Pointers are generally made of ____Zero adjust Used to balance both halves of the difference in amplifier or

cathode coupled amplifier in VTVM

DMM Type of meter that provides precise reading of V,I,R wherethere is generation of samples at the input and feeds it to a

digital read-out

Sensitivity The smallest signal that can be reliably measured in VTVTMRSH = (IFS x Rm)/(IT IFS) Rm = internal resistanceLissajous Pattern Pattern displayed by the oscilloscope which has steady state

char

At half of full Indicating instruments are assumed to be most accurate at_____ part of the scale.

At far right 0 mark is located ______ for a simple ohmmeterResolution The smallest change in applied stimulus that will indicate a

detectable change in deflection in an indicating instrument

CHAPTER 7Inductor Cannot be fabricated in ICTo produce change inoutput when an inputvoltage equals areference voltage

Purpose of comparator in OP-AMP

OP-AMP Mostly uses positive feedback;High Zin, Low Zout, BW is infinity, open loop gain is infinity;

Most commonly used type of linear IC;

50mW typical power dissipated of OP-AMP;

500mW absolute max rating for OP-AMP interval power

dissipation

1V/us typical slew rate of OP-AMP

30V absolute max rating for an OP-AMP differential input

voltage

20dB/decade rate of gain reduction in OP-AMP

80nA typical input bias current of 741 OP-AMP

25mA short circuit current output of 741 OP-AMP


20/22

0.5V/uS slew rate of 741 OP-AMP

2 - # of power supplies required by 741 OP-AMP

OP-AMP magnitudecomparator circuit

Doesnt use feedback

OP-AMP input biascurrent Is the average of the 2 base currentsuA741C OP-AMP Is used for commercial purposes;

Its CMRR = 70dB

Voltage follower An OP-AMP circuit that has its output tied directly to theinverting terminal

Summing Point in anOP-AMP

A terminal of the OP-AMP where the input resistors are

commonly connected

Ratio of Rf/R must beequal to thereciprocal of thenumber of inputs

Condition to convert a summing amplifier to an averaging

amplifier

Negative The summing amplifier has 2 or more input and its outputvoltage is proportional to the _______ of the algebraic sum

of its input voltages.

Power BW The highest undistorted freq output of an OP-AMP for a givenslew rate and peak voltage

Less than 1W Power dissipation of most low power linear IC2 mega ohms Typical input resistance of the OP-AMP when measured under

open loop

555 timer Most popular IC in used in timing circuits;Can be used in monostable and astable applications

Square wave clock _____ is an astable multivibrator (relaxation oscillator)RC synthesis Technique used to eliminate the need for inductive elements

in monolithic IC

Single-Stone Monos / LithosSSI Up to 9 gatesMSI 10 to 100 gatesLSI More than 100 gatesVLSI More than 1000 gatesBIFET IC OP-AMP that combines FETS and Bipolar transistorsRelaxation oscillator Operates on the principle of the charge and discharging of a

capacitor

Digital IC Possesses digital signalsLinear IC Possesses analog signalsThick Film and ThinFilm

We can use ____ and _____ if higher power ICs are needed.

Common Mode signal Signal that is applied with equal strength to both inputs of a


21/22

differential amplifier or an OP-AMP

-55 to +125 degCelsius

Military and space IC

-25 to +85 degCelsius

Industrial IC

0 to +70 deg Celsius Commercial ICMilitary and Industrial After assembly, the ICs are tested and classified as either______.

DIP packaging Low in cost;Tiniest packaging known;

Ruggedly resists vibration

ICs advantages overdiscrete devices(soldered devices)

Lower cost;

High reliability;

Smaller in size

VCO It exhibits a freq that can be varied with a DC control voltageAv = Rc / 2Re Voltage gain of a differential amplifierThe difference in VBEvalues

Source of output offset voltage

manufacturer Letter-prefix code indicates the ______Packaging type Letter-suffix code indicates the _________D, J, N Most common packaging typeD packaging suffix for Plastic DIP for surface mounting on a PC

board

P,N packaging suffix for Plastic DIP for insertion in socketsJ packaging suffix for Ceramic DIP1.5 mils x 3 mils Typical dimension of a MOSFET in a single chip IC3 mils x 4.5 mils Typical dimension of a DIODE in a single chip IC4 mils x 6.5 mils Typical dimension of a BJT in a single chip ICIt has an inherentcurrent limiting

Advantage of a shunt regular type over a series regulator

type

Flat response Type of response that characterizes a single pole low passfilter

Single RC circuit The term pole refers to a ________ in terms of circuitcomponent.

Stray wiringcapacitance

Unwanted capacitance between connecting wires and ground

1M transistors Intel i486 32 bit microprocessor has _________ on a singlechip

Trip point It is the value of the input voltage that switches the outputcomparator or Schmitt trigger

Virtual ground Type of ground that appears at the inverting input of an OP-AMP that used negative feedback


22/22

CCD (charge-coupledCapacitor)

1969; by WS Boyle and GE Smith

0.5 to 15GHz Microwave ICs cover the freq rangeThe inverting input isconnected to the +5V

In a 5V level detector circuit, ______________

Ground To use a comparator for zero-level detection, the invertinginput is connected to the ___

Czochralsky Pullingtechnique

Most common method used for the growth of single crystals

for IC farbrication

CompensatingCapacitor

Prevents oscillations inside an OP-AMP

Documents

3001 Elecs Summary