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Semiconductor Components Industries, LLC, 2002 March, 2002 – Rev. 0 1 Publication Order Number: 2N3819/D 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage V DS 25 Vdc Drain–Gate Voltage V DG 25 Vdc Gate–Source Voltage V GS 25 Vdc Drain Current I D 100 mAdc Forward Gate Current I G(f) 10 mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 350 2.8 mW mW/°C Storage Channel Temperature Range T stg –65 to +150 °C Device Package Shipping ORDERING INFORMATION 2N3819 TO–92 TO–92 CASE 29 STYLE 22 5000 Units/Box 3 2 1 2N3819 = Device Code Y = Year WW = Work Week MARKING DIAGRAM 2N 3819 YWW http://onsemi.com 3 DRAIN 1 SOURCE 2 GATE

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Page 1: 2N3819 Completo

Semiconductor Components Industries, LLC, 2002

March, 2002 – Rev. 01 Publication Order Number:

2N3819/D

2N3819

JFET VHF/UHF Amplifier

N–Channel – Depletion

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage VDS 25 Vdc

Drain–Gate Voltage VDG 25 Vdc

Gate–Source Voltage VGS 25 Vdc

Drain Current ID 100 mAdc

Forward Gate Current IG(f) 10 mAdc

Total Device Dissipation@ TA = 25°CDerate above 25°C

PD3502.8

mWmW/°C

Storage Channel Temperature Range Tstg –65 to +150 °C

Device Package Shipping

ORDERING INFORMATION

2N3819 TO–92

TO–92CASE 29STYLE 22

5000 Units/Box

321

2N3819 = Device CodeY = YearWW = Work Week

MARKING DIAGRAM

2N3819YWW

http://onsemi.com

3 DRAIN

1 SOURCE

2GATE

Page 2: 2N3819 Completo

2N3819

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage(IG = 1.0 µAdc, VDS = 0)

V(BR)GSS 25 – – Vdc

Gate–Source(VDS = 15 Vdc, ID = 200 µAdc)

VGS 0.5 – 7.5 Vdc

Gate–Source Cutoff Voltage(VDS = 15 Vdc, ID = 10 nAdc)

VGS(off) – – –�8.0 Vdc

Gate Reverse Current(VGS = 15 Vdc, VDS = 0)

IGSS – – 210 nAdc

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current(VDS = 15 Vdc, VGS = 0)

IDSS 2.0 – 20 mAdc

SMALL–SIGNAL CHARACTERISTICS

Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yfs 3.0 – 6.5 mmhos

Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yos – 40 – �mhos

Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yfs – 5.6 – mmhos

Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yrs – 1.0 – mmhos

Input Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc) Ciss – 3.0 – pF

Reverse Transfer Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) Crss – 0.7 – pF

Output Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) Coss – 0.9 – pF

Cut–off Frequency (Note 1) (VDS = 15 Vdc, VGS = 0) F(Yfs) – 700 – MHz

1. The frequency at which gfs is 0.7 of its value at 1 kHz.

Page 3: 2N3819 Completo

2N3819

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f, FREQUENCY (MHz)

30

10

bis @ IDSS

f, FREQUENCY (MHz)

5.0

Figure 1. Input Admittance (y is) Figure 2. Reverse Transfer Admittance (y rs)

COMMON SOURCE CHARACTERISTICSADMITTANCE PARAMETERS(VDS = 15 Vdc, Tchannel = 25°C)

f, FREQUENCY (MHz)

20

f, FREQUENCY (MHz)

10

Figure 3. Forward Transadmittance (y fs) Figure 4. Output Admittance (y os)

g is,

INP

UT

CO

ND

UC

TAN

CE

(mm

hos)

20

10

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

20 30 50 70 100 200 300 500 700 1000

b is,

INP

UT

SU

SC

EP

TAN

CE

(mm

hos)

g fs,

FO

RW

AR

D T

RA

NS

CO

ND

UC

TAN

CE

(mm

hos)

|bfs

|, FO

RW

AR

D S

US

CE

PTA

NC

E (m

mho

s)

g rs

, RE

VE

RS

E T

RA

NS

AD

MIT

TAN

CE

(mm

hos)

b rs

, RE

VE

RS

E S

US

CE

PTA

NC

E (m

mho

s)

0.2

0.3

0.50.7

1.0

2.0

3.0

5.07.0

10

g os,

OU

TPU

T A

DM

ITTA

NC

E (m

hos)

b os,

OU

TPU

T S

US

CE

PTA

NC

E (m

hos)

3.0

0.050.07

0.1

0.2

0.3

0.7

0.5

1.0

2.0

10 20 30 50 70 100 200 300 500 700 1000

10 20 30 50 70 100 200 300 500 700 10000.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10 20 30 50 70 100 200 300 500 7001000

bis @ 0.25 IDSS

gis @ IDSS

gis @ 0.25 IDSS

brs @ IDSS

0.25 IDSS

grs @ IDSS, 0.25 IDSS

gfs @ IDSS

|bfs| @ IDSS

|bfs| @ 0.25 IDSS

bos @ IDSS and 0.25 IDSS

gos @ IDSS

gos @ 0.25 IDSS

gfs @ 0.25 IDSS

Page 4: 2N3819 Completo

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Figure 5. S 11s Figure 6. S 12s

0° 350° 340° 330°10°20°30°

180° 190° 200° 210°170°160°150°

32

31

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26

25

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23

22

40°

50°

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70°

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90°

100°

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140°

0° 350° 340° 330°10°20°30°

180° 190° 200° 210°170°160°150°

320°

310°

300°

290°

280°

270°

260°

250°

240°

230°

220°

40°

50°

60°

70°

80°

90°

100°

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140°

0° 350° 340° 330°10°20°30°

180° 190° 200° 210°170°160°150°

32

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22

40°

50°

60°

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90°

100°

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0° 350° 340° 330°10°20°30°

180° 190° 200° 210°170°160°150°

320°

310°

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290°

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260°

250°

240°

230°

220°

40°

50°

60°

70°

80°

90°

100°

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120°

130°

140°

1.0

0.9

0.8

0.7

0.6

0.4

0.3

0.2

0.1

0.0

1.0

0.9

0.8

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0.4

0.5

0.6

900900

800

700

600

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100

800700

600

500

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200

100

ID = 0.25 IDSS

ID = IDSS

100

200

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400

600700

800

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500

ID = IDSS, 0.25 IDSS

900

500

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700

600

500

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300 200

100

ID = 0.25 IDSS

ID = IDSS 100200

300

400

900

600

700

800

900

800

600

400300200

200

100ID = 0.25 IDSS

ID = IDSS

900

100500

700

300400

500600700800

Figure 7. S 21s Figure 8. S 22s

COMMON SOURCE CHARACTERISTICS S–PARAMETERS

(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)

Page 5: 2N3819 Completo

2N3819

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f, FREQUENCY (MHz)

10

gig @ IDSS

f, FREQUENCY (MHz)

0.5

Figure 9. Input Admittance (y ig) Figure 10. Reverse Transfer Admittance (y rg)

COMMON GATE CHARACTERISTICSADMITTANCE PARAMETERS(VDG = 15 Vdc, Tchannel = 25°C)

f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 11. Forward Transfer Admittance (y fg) Figure 12. Output Admittance (y og)

g ig,

INP

UT

CO

ND

UC

TAN

CE

(mm

hos)

20

10

0.3

0.50.7

1.0

2.0

3.0

5.0

7.0

20 30 50 70 100 200 300 500 700 1000

b ig,

INP

UT

SU

SC

EP

TAN

CE

(mm

hos)

g fg,

FO

RW

AR

D T

RA

NS

CO

ND

UC

TAN

CE

(mm

hos)

b fg,

FO

RW

AR

D S

US

CE

PTA

NC

E (m

mho

s)

g rg

, RE

VE

RS

E T

RA

NS

AD

MIT

TAN

CE

(mm

hos)

b rg

, RE

VE

RS

E S

US

CE

PTA

NC

E (m

mho

s)

0.2

0.3

0.50.7

1.0

2.0

3.0

5.07.0

10

g og,

OU

TPU

T A

DM

ITTA

NC

E (m

mho

s)

b og,

OU

TPU

T S

US

CE

PTA

NC

E (m

mho

s)

0.3

0.01

0.1

0.2

10 20 30 50 70 100 200 300 500 700 1000

10 20 30 50 70 100 200 300 500 700 10000.01

0.02

0.03

0.3

10 20 30 50 70 100 200 300 500 700 1000

big @ 0.25 IDSS

big @ IDSS

grg @ 0.25 IDSS

gfg @ IDSS

gfg @ 0.25 IDSS

brg @ 0.25 IDSS

bog @ IDSS, 0.25 IDSS

gog @ IDSS

gog @ 0.25 IDSS

0.2 0.0050.007

0.02

0.03

0.05

0.07

0.1

0.050.07

0.1

0.2

0.50.71.0

brg @ IDSS

0.25 IDSS

gig @ IDSS, 0.25 IDSS

bfg @ IDSS

Page 6: 2N3819 Completo

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0° 350° 340° 330°10°20°30°

180° 190° 200° 210°170°160°150°

320°

310°

300°

290°

280°

270°

260°

250°

240°

230°

220°

40°

50°

60°

70°

80°

90°

100°

110°

120°

130°

140°

0° 350° 340° 330°10°20°30°

180° 190° 200° 210°170°160°150°

32

31

30

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27

26

25

24

23

22

40°

50°

60°

70°

80°

90°

100°

110°

120°

130°

140°

0° 350° 340° 330°10°20°30°

180° 190° 200° 210°170°160°150°

320°

310°

300°

290°

280°

270°

260°

250°

240°

230°

220°

40°

50°

60°

70°

80°

90°

100°

110°

120°

130°

140°

0° 350° 340° 330°10°20°30°

180° 190° 200° 210°170°160°150°

32

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25

24

23

22

40°

50°

60°

70°

80°

90°

100°

110°

120°

130°

140°

Figure 13. S 11g Figure 14. S 12g

Figure 15. S 21g Figure 16. S 22g

0.7

0.6

0.5

0.4

0.3

0.04

0.5

0.4

0.3

0.2

1.0

0.9

0.8

0.7

0.6

0.03

0.02

0.01

0.0

0.01

0.02

0.03

0.04

0.1

900

900

800

700

600

500

300

200

100800

700

600

500

400300

200100

ID = 0.25 IDSS

ID = IDSS

100 200300

400500

600

700

800

900

900

600

700

800

ID = 0.25 IDSSID = IDSS

100

900

100

900

ID = 0.25 IDSS

ID = IDSS

1.5

100400

500

600700

800 900

ID = IDSS, 0.25 IDSS

COMMON GATE CHARACTERISTICS S–PARAMETERS

(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)

Page 7: 2N3819 Completo

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PACKAGE DIMENSIONS

CASE 29–11ISSUE AL

TO–92 (TO–226)

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

R

A

P

J

L

B

K

GH

SECTION X–X

CV

D

N

N

X X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.175 0.205 4.45 5.20B 0.170 0.210 4.32 5.33C 0.125 0.165 3.18 4.19D 0.016 0.021 0.407 0.533G 0.045 0.055 1.15 1.39H 0.095 0.105 2.42 2.66J 0.015 0.020 0.39 0.50K 0.500 --- 12.70 ---L 0.250 --- 6.35 ---N 0.080 0.105 2.04 2.66P --- 0.100 --- 2.54R 0.115 --- 2.93 ---V 0.135 --- 3.43 ---

1

STYLE 22:PIN 1. SOURCE

2. GATE3. DRAIN

Page 8: 2N3819 Completo

2N3819

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ON Semiconductor is a trademark and is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the rightto make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims anyand all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheetsand/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” mustbe validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or deathmay occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLCand its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney feesarising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges thatSCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATIONJAPAN : ON Semiconductor, Japan Customer Focus Center4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone : 81–3–5740–2700Email : [email protected]

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For additional information, please contact your localSales Representative.

2N3819/D

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