Upload
others
View
1
Download
0
Embed Size (px)
Citation preview
OMMIC Innovating with III-V’s
OMMIC
OMMIC
OMMIC Innovating with III-V’s
OMMIC
Mixed D/A ED02AH process for radar control functions and new GaN/Si for hyper-frequency power applications
OMMIC Innovating with III-V’s
OMMIC
Europe’s Independant IIIV Full-Service Foundry
mars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
3
OMMIC Innovating with III-V’s
OMMIC
OMMIC PROCESS
mars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
4
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
5
OMMIC ED02AH D/A mixed process for control functions
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
6
Introduction
•III/V provide optimum trade-offs in terms NF, gain, power and linearity for various applications including wireless telecommunication infrastructure, security scanners, radars and instrumentation.
•A weaker feature of III/V technologies � limited level of integration.
We will show how E/D PHEMT processes enable the integration of analogue functions like phase shifters and attenuators with serial to parallel converters
All integrated on the same chip to achieve state of the art performance through the example of Corechips.
E/D Serial ctrl High integration cost reduction
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
7
Electonically steerable antenna example
The side lobes may then be controlled by variable attenuators attached to each element
The orientation of the beam is obtained by the use of variable phase shifters attached to each radiating element
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
8
Electonically steerable antenna example
Digital C
ontol
Each antenna element may contain :•A variable phase shifter•A variable attenuator•Switches, to be able to use the samesystem in receive or transmit modes•Amplifiers:to compensate the losses and createsome gain,to reduce the noise in receive mode,to create enough power to drive power amplifiers in transmit mode
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
9
From single function to multiple function chip
Due to higher frequency of radar application , integration of functions become a key aspect of designs. Below is the X band example
Single functions already exists
LNA Dig Ph Shifters Dig Attenuators MPA
X band LNA
32dB gain 1.1dB NF
X band Attenuator
6 bit parallel control
X band Ph shifter
6 bit parallel control
X band MPA
23dBm Psat
3.74mm² 5.1mm² 3.12mm² 2.9mm²
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
10
Serial Interface need : 6 bit corechip example
With 12 bits (or more) for a full core chip, we are faced with a connection problem:
Up to 24 pads (2 per bit if +/- control is required) to drive the 12 bits
24 bonding wires per circuit, multiplied by hundreds of
circuits
The solution is to place the SIPO on the chip
Only one PIN to control all bits through Serial Input Parallel Output
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
11
From single function to multiple function chip
Due to higher frequency of radar application , integration of functions become a key aspect of designs. Below is the X band example
Single functions already exists
LNA Dig Ph Shifters Dig Attenuators MPA
X band LNA
32dB gain 1.1dB NF
X band Attenuator
6 bit parallel control
X band Ph shifter
6 bit parallel control
X band MPA
23dBm Psat
3.74mm² 5.1mm² 3.12mm² 2.9mm²
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
12
Multiple Cascaded devices : The SIPO Advantage
SIPO
Clock
Phase
Control
Amplitude
control
Data outSIPO
Phase
Control
Amplitude
control
SIPO
Phase
Control
Amplitude
control
N devices to control :
2 x 6 x N wires for Parallel controled devices
Only 3 wires for cascaded SIPO enabled devices
Data In
Latch Enable
6 6 6 6 6 6
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
13
How to realize the SIPO
Efficient SIPO on chip requires Enhancement mode pr ocess
With D-mode transistorsRequires negative supply + DC
level shifting
With E-mode transistorsDirect coupling
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
14
OMMIC E/D process : ED02AH
•Hetero-epitaxy with a pseudomorphic (GaInAs) active layer•0.18µm gate length (60 GHz Ft)•Depletion and Enhancement mode recessed transistors: Vt=0.225V or -0.9V•2 types of diodes (0.18µm "GM" and 3µm "BE") for mixing, level shifting, or varactors.•3 types of Resistors : 40, 200 or 500 Ohms.square•2 types of MIM Capacitors : 50 or 400 pF/mm2•Full SiN + SiO2 + SiN protection ensuring high reliability•SiO2/SiN + air bridge isolation between layers to reduce the parasitic capacitances.•1.25µm or 2.5µm thick gold metallisation for interconnections and spiral inductors.•Via holes through the 100µm substrate to reduce parasitic inductances to ground.
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
15
Examples of SIPOs
26 bits SIPO
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
16
Examples of X band Corechips
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
17
Examples of X band Corechips
Separated register for Rx and Tx
External additional attenuators
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
18
Nowadays brand new 35GHz Corechip
Rx / TxRx / TxRx / TxRx / TxTxTxTxTx out
PA
CGY2138UH
T/R Chip
OMM9650UH
Core Chip
CGY2350UH
RxRxRxRx in
Ka Band
Chipset
Serial Control
LNA
PA
Option 2
LNACGY2134UH
Tx Tx Tx Tx out
RxRxRxRx in
+
LNA
PA
5Bits
360
5.6 LSB 0.5dB LSB
31.5dB
G : 30dBNF : 1,1dB
G : 26dBNF : 3.5dB
G : 26dBP.Sat : 25dBm
G : 19dBP.sat : 37dBm
-20-19-18-17-16-15-14-13-12-11-10-9-8-7-6-5-4-3-2-10
34 34,2 34,4 34,6 34,8 35 35,2 35,4 35,6 35,8 36
Frequency(GHz)
Att
enua
tion
(dB
)
-360,00-340,00-320,00-300,00-280,00-260,00-240,00-220,00-200,00-180,00-160,00-140,00-120,00-100,00-80,00-60,00-40,00-20,00
0,00
34 34,2 34,4 34,6 34,8 35 35,2 35,4 35,6 35,8 36
Frequency (GHz)
Pha
se S
hift
(°)
OMMIC Innovating with III-V’s
OMMIC
OMMIC Corechip offer • More than 15 Core chip in production from C band to Ka Band • More than 40 Custom Corchip designed for customers
mars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
19
Packaged in HTCC QFN
Packaged version in dev
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
20
future control function
OMMIC Innovating with III-V’s
OMMICmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
21
OMMIC Innovating with III-V’s
OMMIC
mmW GaN HEMT on Si : Goal
mars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
22
The choice of a GaN heterostructure on Si is dictated by the following points:
• Increase power density 3 times the current GaAs technology
• Address applications up to 20W, compatible with the Si Thermal conductance, primarily targeting frequency bands from 15 GHz and 100 GHz .
• Access to the epitaxial material without depending on SiC sources
• Full replacement of GaAs processes for professional applications up to 100GHz at a lower cost/mm2
OMMIC Innovating with III-V’s
OMMIC
mmW GaN HEMT on Si
mars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
23
OMMIC Innovating with III-V’s
OMMIC
Advanced release of GaN/Si process
Preliminary Design Kit available under ADS or AWR
D01GH :
Applications :
• High frequency Power Amplifiers 10GHz to 94 GHz
• Robust Low Noise Amplifiers (< 20 GHz)
• Robust Control Functions
• High Linearity Mixersmars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
24
0.11 µm gate (GaN on Si)
OMMIC Innovating with III-V’s
OMMIC
D01GH Key power applications and targets
• Scaled GaN /Si ( 30% shorter gate) can replace GaAs and InP for power applications with following power capability :
• 1 W @ 94GHz
• 6 W @ 45GHz• 12 W @ 30GHz
• 25 W @ 10GHz
• 3 KEY features are required :
• In situ SiN passivation ( reduced lag effects in planar structure)• Si substrate with proprietary buffer and extension to 6 inch• Regrown ohmics ( for high gm and low noise)
mars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
25
OMMIC Innovating with III-V’s
OMMIC
D01GH PROCESS FLOW
mars 14
ISO9001 version 2000, ISO14001 version 2004 Registered Company
26
2x70um HEMT
OMMIC Innovating with III-V’s
OMMIC
Thank you for your attention