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2002 OSA Annual Meeting - Orlando, Florida Technical Session WJJ5 - Thin Films II Characterization of Diamond-Like Carbon Thin Films and Their Application for Diffractive Optical Elements Luiz G. Neto EESC – University of São Paulo São Carlos - SP, Brazil G.A. Cirino ; R.D. Mansano ; P. Verdonck LSI - EPUSP - University of São Paulo São Paulo - SP, Brazil

2002 OSA Annual Meeting - Orlando, Florida Technical Session WJJ5 - Thin Films II Characterization of Diamond- Like Carbon Thin Films and Their Application

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2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Characterization of Diamond-Like Carbon Thin Films and

Their Application for Diffractive Optical Elements

Luiz G. Neto

EESC – University of São PauloSão Carlos - SP, Brazil

G.A. Cirino ; R.D. Mansano ; P. Verdonck

LSI - EPUSP - University of São Paulo São Paulo - SP, Brazil

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Outline

1. Introduction & Goals

2. Results

4. Conclusions

5. Acknowledgments

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Introduction

Diffractive Optical Elements (DOE) have a wide range of applications

Amorphous hydrogenated carbon thin films (a:C-H), also called Diamond-Like Carbon (DLC), can be employed as a thin film in several optical applications

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Main Goals

Show the applicability of amorphous hydrogenated carbon films (a:C-H) in the micro-optics field, for the fabrication of:

> Diffractive devices:

- Phase-only CGH active - Full complex DOEs material

> Refractive Devices:

- Thin films protective material

(

(

)

)

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Deposition of carbon thin films Our Diamond-Like Carbon (DLC) thin film is

deposited by reactive magnetron sputtering

> 3-inch diameter substrate

> transparent substrate (mechanical support)

> process conditions:

Temp. < 100oC (!!!!) CH4 plasma

Deposit. rate: 16 nm/min Rrms: 2.5 nm

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

> Ellipsometry

a priori knowledge of the film thickness is necessary

very good results if silicon substrate is used

> UV / Vis / NIR spectrometry

wavelengths at which film absorption is negligible / nearly complete

Techniques to Characterize DLC Thin Film

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

0 1 2 3 4 5 6 7

10

15

20

25

30

35

40

45

Blank Lexan Lexan with Si

xN

yO

z

Lexan with DLC

Dep

th [m

]

Load [Newtons]

Lexan samples with and without DLC thin film were submmited to scratch test

Mechanical Property of DLC Thin Film

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Phase-only CGH employing DLC

Design in the scalar domain

Fabrication using the following process steps:

> Sputter deposition of DLC

> lithography + plasma etching of the (/2) phase delay: ~ 1 micron feature size

> lithography + plasma etching of the () phase delay

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Fabrication of the DLC-based Phase-only DOE Sequence for the entire manufacturing process

Glass Substrate

1.5 m thick DLC

sputtering

/ 2-phasedry

etching

4 (n-1)

- phase mask

lithography - phase

dryetching

2 (n-1)

/ 2-phase maskLithography

over the DLC thin film

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Fabrication results

A.F.M. characterization S.E.M. characterization

> very low induced roughness level, after plasma etching;

> nearly vertical side walls, after the (anisotropic) plasma etching.

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Full complex DLC-based DOE

Design through direct and inverse light propagation > 4 phase + 9 amplitude levels

Fabrication process steps > same as phase-only DOE

=> 3 lithographic masks

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Fabrication of the Full Complex DLC-based DOE Sequence for the entire manufacturing process

Glass Substrate

Aluminumlayer

deposition

1.5 m thick DLC

sputtering

Amplitudemask

lithography

/ 2-phasedry

etching

4 (n-1)

- phase mask

lithography - phase

dryetching

2 (n-1)

/ 2-phase maskLithography

over the DLC thin film

Aluminumlayer

wetetching

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Optical characterizationof a Fresnel CGH Full Complex

Modulation

Phase-onlyModulation

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Diffractive Phase Shift Mask for Micro-Electronic Fabrication

Phase shift photo masks dramatically improve the resolution of exposure systems

A full-complexDOE can act as anear-fieldpatterngenerator

(50 m gap)

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Fabrication of the proximity mask

Introducing DLC thin layer to implement the amplitude modulation at = 364 nm

Almost transparent in the visible region

Very easy alignment procedure !!

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Optical Results

Contact Exposure Proximity (50µm) Exposure

Some test structures were generated in order to observe differences between contact and proximity exposure schemes

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

DLC Thin Films as a Protective Coating for Polymeric Microlens Arrays

Cross sectional view

3-D panoramic view

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Conclusions DLC thin films are suited to be used as active parts

(and protective coating) of micro-optical devices:

> phase-only modulation CGH, > full complex modulation CGH > full complex modulation phase shift masks > protection layer of polymeric micro-lenses array

Optical characterization of the fabricated devices showed a high quality image with very low speckle noise level

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Conclusions (cont)

A full complex-amplitude modulation phase-shift proximity photo mask was designed and fabricated: improvement of the exposure system resolution

A DLC thin layer was introduced to implement the amplitude modulation and a four-phase micro-relief on a fused silica substrate to implement the phase modulation

Optical results showed that diffraction effects are minimized at the mask pattern edges

2002 OSA Annual Meeting - Orlando, Florida

Technical Session WJJ5 - Thin Films II

Acknowledgments

The authors would like to thank the financial support of

> FAPESP,> CenPRA> FINEP and> CNPq.

and

> L. Cescato from UNICAMP, Brazil, for yielding laboratory infra-structure