New Product Bulletin

Provides simultaneous high voltageresistance, low ON resistance, high-speed switching, and fast recovery

ROHM’s 1200V SiC MOSFETs provide low loss during high frequency operation. In particular, switching loss is reduced by 90% compared with Si IGBTs, decreasing both chip size and costs. In addition, improved processes related to crystal defects and optimized device structure ensure high reliability. ROHM also offers the industry’s first* SiC MOSFET that integrates an SiC-SBD in the same package for low VF, making it ideal for inverter applications and more.

■ Lineup

SCT2080KE / SCH2080KE

1200V Voltage Resistance SiC MOSFETs

Low switching loss contributes to improved energy savings and increased miniaturizationROHM SiC MOSFETs achieve high-speed switching and high voltage resistance not possible with their silicon counterparts.As a result, turn OFF loss is reduced by over 90%, while high-speed diode recovery characteristics reduce loss by 73% over silicon IGBTs during operation for minimal power consumption.

VDS-ID characteristics comparisonInnovations such as gate oxidizing conditions enable an ON resistance per-unit-area 29% lower than conventional products, resulting in the lowest ON resistance at 1200V in the TO-247 MOSFET class*. In addition, low ON resistance is maintained even at high temperatures, and no voltage rise ensures low loss even during light loads.

ApplicationsExternal Dimensions(Unit : mm)

• Industrial equipment• Power conditioners and more

<Circuit Examples>

15.907.95 5.03

1.98

6.17

3.61

2.40

0.60

3.91

3.0°

5.62

4.32

3.00

5.451.202.03

3.81

20.9

520

.18

SiC-MOSFET and SiC-SBD integrated into asingle packageROHM’s SCH2080KE SiC MOSFET integrates an SiC-SBD for low VF, reduced switching loss, low ON resistance, and low recovery loss, making it ideal for inverter applications. In addition, fewer components are required, contributing to greater space savings.

InverterStep-Down Chopper

SiC-MOSFETSiC-MOSFET

Motor

Turn OFF Characteristics

Cur

rent

(A)

Time (nsec)50 100 150 200 250 300 350 400 4500

Vdd=400VRg=5.6Ω

25

20

15

10

5

0

-5

Si-IGBT

SiC-MOSFET

SiC not only provides greater energy savings and efficiency, but also enables smaller peripheral components to be used during high-frequency (30kHz over) operation, contributing to end-product miniaturization.

SCT2080KE(SiC-MOSFET)

SCH2080KE(SiC-MOSFET+SiC SBD)

1200V

1200V

BVDSS

80mΩ

80mΩ

RDS(on)

TO-247

TO-247

PackagePart No.

Drain

Gate

Source

SBD

VDS-ID (Ta=25°C) VDS-ID (Ta=150°C)

0

20

40

60

80

100

120

Si-IGBT SiC-MOSFET

Loss

(W)

ON LossOFF LossConduction Loss

73% lower lossvs. IGBT

Loss Comparison

0

5

10

15

20

25

30

0 1 2 3 4 5VDS (V)

ID (A

)

Si IGBT1200VSi IGBT1200V

Si SJMOS900VSi SJMOS900V

SiC JFET1200VSiC JFET1200V

SiC-MOSFET (Vgs=18V)SJ MOS (Vgs=10V)IGBT (Vgs=15V)SiC JFET (Vgs=3V)

0

5

10

15

20

25

30

0 1 2 3 4 5VDS (V)

ID (

A)

Si IGBT1200VSi IGBT1200V

Si SJMOS900VSi SJMOS900V

SiC JFET1200VSiC JFET1200V

SiC-MOSFET (Vgs=18V)SJ MOS (Vgs=10V)IGBT (Vgs=15V)SiC JFET (Vgs=3V)

Switching lossreduced 90%

(at 30kHz drive)

SiC -MOSFET1200VSiC -MOSFET1200V

SiC-MOSFET1200VSiC-MOSFET1200V

*ROHM June 2012 survey

Body Diode

■ ■

Product Outline

etc