10bit Cs DAC

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    Sankalp Semiconductor Confidential 1

    10 BIT CURRENT STEERING

    DAC

    Mano Chitra

    AshishCharan

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    Sankalp Semiconductor Confidential 2

    SPECIFICATIONS:

    No. of I/P bits: 10

    Clock frequency:500 MHz

    O/P current : ~20mA

    Technology: tsmc65nm_8LM

    No. of metals used:8

    Area of block:131252um2(X=314um,Y=418um)

    Vref_18: 1.71-1.89V

    avdd: 3-3.6V

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    Sankalp Semiconductor Confidential 3

    CASCODE ARRAY

    BIAS

    SWITCH + LATCH + DFF

    CURRENTSOURCE ARRAY

    DECODERCLK DRIVER

    LEVEL

    SHIFTER

    outp

    outn

    CLOCKTREE

    DECODER

    inclk pd

    res

    iref

    vref

    avss avdd

    dvdddvss

    FLOORPLAN:

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    POWER ROUTING:

    avdd

    avss

    dvdddvss

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    MAJOR BLOCKS:

    Digital Logic:

    10 I/P bits

    o 3 Binary I/Ps

    o 7 I/Ps thermometrically decoded into 127 bits

    Thermometric decoder has a 3to7 and 4to15

    decoder which gives I/Ps to an array of 127

    decoders Total 130 I/Ps given to DFF followed by latch to

    give 260 control signals(complementary)

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    Switch block:

    130 pair of complementary switches controlled

    by input signals from latch

    Here switches are 16u width pmos

    Currents from the 130 current sources are given

    to respective pair of switches

    These differential switches give the final O/Pcurrent corresponding to the digital I/P

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    Current source:

    This is the most critical block of CS DAC

    There are 130 current sources each with a

    source transistor and a cascode transistor

    Out of 130, 3 are binary sources with 1x,2x and

    4x multipliers

    Rest 127 have 8x multiplier each

    So it amounts to total 1023 individualsources[(127x8)+4+2+1=1023]

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    Continued...

    Both current source and cascode have sameno. of multipliers

    The 130 drain currents of these cascode are

    given to the O/P switches

    Bias Block:

    This block generates the gate signals for

    Current source and Cascode

    It has a five pack opamp and a folded cascode

    amplifier

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    Sankalp Semiconductor Confidential 9

    Tie Vss:

    It is a low signal which is connected to all the

    switches to activate them instead of avss so as

    to avoid Antenna Effect which can be present if

    avss is routed to all the gates of switches.

    Level Shifter:

    To generate enable signal

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    Clock driver:

    Clock frequency:500 Mhz

    It is driven through 5 stages of increasing load

    It is given as clkp and clkn to 130 DFF and clkp

    to 130 latches

    Routing Cap on clkp and clkn should not

    exceed 120fF each

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    Sankalp Semiconductor Confidential 11

    GENERAL GUIDELINES:

    Follow EM rule for Average or rms current as

    the customer specifies

    Follow DFM rules for routing also in case of

    DFM transistors

    A layer called R_rule_analog has to cover all

    the DFM transistors for tool understanding

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    CURRENT SOURCE MATCHING:

    Q2 Random pair algorithm is followed to form a

    matching pattern for the 130 current sources.

    As mentioned 1023 multipliers is rounded off to

    1024 with one dummy

    This 1024 is distributed into a 32x32 matrix

    Here a 8x16=128 forms a unit cell that is flipped

    and repeated 8 times to form 1024 Out of this 128 in each unit cell,127 belong to

    the unary 127 sources

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    Continued:

    So this 127 repeated in 8 unit cells form 127*8x

    multipliers

    The binary sources 1x,2x and 4x and the 1

    dummy are distributed one in each of the 8x16unit cell

    The same pattern is followed for cascode array

    also Each individual source of 1024 carries 20uA

    Total O/P current is ~20mA

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    CASCODE vs CS

    W/L of cascode is only more than half of CS

    transistors

    The length of Current source transistor is more

    to increase the Rds Value which can beachieved by increasing the length

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    CONSTRAINTS IN CS BLOCK:

    Matching of Current source transistors is very

    critical

    So CS and cascode transistors are placed in

    separate arrays because their sizes aredifferent

    Cap on drain line of CS should be minimum

    As the total output Current coming from CS-DAC is drawn from VDD itself ,this connection

    needs to be strong.

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    Continued...

    This VDD has to be routed in Highest metal in a

    mesh type because it will be having lowest

    resistivity so that all Vgs drop will be same to all

    transistors and tapped to each transistor In each column of 32 transistors 16 are

    repeated twice.So only 16 drain lines are routed

    over the transistors

    M4 and M6 are alternately used for this

    Now there is straight one to one connection

    from CS drain to cascode source line

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    Continued...

    Cascode transistor orientation is changed to

    match with the aspect ratio of CS array

    In cascode 16 Source and 16 Drain lines are

    running alternately over the device in each of 32column

    M6 is used for the drain connection

    There are 130 horizontal M5 lines below thecascode and all drains are tapped respectively

    All the M6 drain lines are extended for equal

    length to match the cap

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    Continued...

    Cap between Drain of CS and VDD needs to be

    reduced.So atleast 2 metal difference is needed

    VDD rou t ing:

    Opt ion 1: Take VDD at centre and form tree like

    structure.Here R variation will be same but R will

    be more

    Option 2:If VDD is on both sides R is less butvariations are not same.Here this is fine

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    Continued...

    A 4 contact wide P strap has to be run between

    CS array and cascode array and between

    cascode and switch

    Guard ring inside CS and Cascode array is 2contact wide

    Dummies are placed on all the 4 sides of both

    CS and cascode array

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    SWATCH BLOCK:

    Switch,switchbar,latch and DFF form a unit cell

    This is done so that there is one to one

    connection from DFF to latch and to switch and

    there is less crossing of CLK and data

    All the 130 swatch units are placed in 1*130

    fashion and currents tapped from horizontal

    lines

    O/P current lines are taken in highest metal

    The binary switches have additional pass

    transistors tied to tie-vss and are always on

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    Sankalp Semiconductor Confidential 21

    Screenshot of Swatch placement

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    Continued...

    They are placed on the top corner of this switch

    array

    Its advisable not to stretch the 130 horizontal

    lines over these binary devices as it wouldinduce cap mismatch among the 130 lines

    Bulk of switch is Vref

    16u switch is divided into 4 row of 4u fingereach

    P strap has to be run in between each row of 4u

    wide switch

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    CLOCK:

    Clock routing cap should not exceed 120fF

    Clock is routed in M7 (one less than top metal)

    with sufficient width to minimise RC(here width

    is 0.12u) Clock driver is placed in bottom corner and a

    channel is provided for clock in between the

    decoder so that it data crossing is less

    From that point it is routed as a tree structure

    for 130 DFF

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    BIAS BLOCK:

    Vref and Iref do not need shielding but channel

    has to be made for them between the blocks

    Since res is going to pad a 200ohm resistor is

    included in the design and normal layoutpractice is enough and a Nwell guard ring for

    this resistor

    If resistor is not there then snap back style has

    to be used

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    DECAPS:

    Decaps are used to stabilise the power lines

    from fluctuations and mainly in digital circuits

    (High switching will be there) which means

    device requires power immediately ,so if VDDpin is so far from the device then it takes much

    time and more IR drop also will be there before

    reaching Device itself .

    Therefore these DECAPS will be helpful in

    supplying immediate power to the Devices

    instead from main VDD .

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    Continued...

    So always place DECAPS near to the Devices

    instead of keeping all Decaps at a place in

    Layout.

    UNITCELL of Decap has to be made in afashion such that if we give i/p to one unit cell

    all Decaps will get the i/p and Resistance Drop

    has to be made very less

    Here decap of 50pF between avdd and avss

    and decap of 20pF between dvdd and dvss is

    needed in this design

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    POWER PLOT:AVDD

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    POWER PLOT:AVSS

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    POWER PLOT:DVDD

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    POWER PLOT:DVSS

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    LESSONS LEARNT:

    Pins in schematic should not be named as mere

    numbers that will create extraction error

    For all analog signals maintain twice or thrice of

    minimum width although minimum widthsatisfies more than EM

    Special characters other than _ should not be

    there in layout name even if it is there in

    schematic name

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    Sankalp Semiconductor Confidential 32

    Continued...

    If view name is "layout_..." instead of "layout" then

    RC extraction tool cannot take this view

    while exporting gds it will have extra binary

    information due to this view name change

    complicated for others to understand which is

    the final layout

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    REVIEW INPUTS AND CHANGES:

    There was lot of coupling between the 130 out lineswhen they were all in same metal

    So we made it alternate M3 and M5

    But in this case symmetry wont be there in cap So every line is made half M3 and half M5 and this

    is used alternately which reduced the coupling from

    50fF to 2fF

    M5M3

    M5 M3

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    Sankalp Semiconductor Confidential 34

    Continued:

    Also the vertical drain lines from cascode arechanged to M6 and M7 alternately

    Since anyway the pattern is flipped and repeated 8

    times symmetry will be maintained in the drain

    routing even when we use 2 alternate metals

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    Some good Layout practices...

    Create unit cell wherever possible so that future

    changes will be in only one place

    Make cell (instances) wherever possible even

    for routing lines so that top level changes willnot affect these

    Minimise top level connections as much as

    possible