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1
Nanometer-scale Organic Molecular Recording with Scanning Tunneling Microscopy
Pennycook, S. J. et al. Phys. Rev. Lett. 2000, 84, 1780.
Gao, H.-J. et al. Appl. Phys. Lett. 2000, 77, 3203.Liu, Z. F. et al. Adv. Mater. 2005, 17, 459.
Tobe Lab.
FUJITA Takumi
2
Contents
IntroductionSTM Data Storage
Organic Charge-Transfer Complex
Writing and Erasing Nanometer-Scale Marks
Thermochemical Hole Burning
Summary
3
Introduction
Transition of Surface Recording Density of Magnetic Storage (bits/in2)
● In Laboratory● Commercial Products
Data Storage
Magnetic Storage …used as HDD in PC
0.9 Pb/cm2 ≈ 6 Pb/in2
(Pb; petabits = 1015 bits)
STM Memory
(Potential)
~ 200 Gb/in2
(Gb; gigabits = 109 bits)
4
Introduction
中国科学院物理研究所纳米物理与器件实验室
Scanning Tunneling Microscopy (STM)
Tobe Lab.
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Introduction
STM MemoryBright spots indicate relatively higher conductance.
6
Introduction
Requirements for Samples of STM Memory
Uniform Surface in Atomic Scale Conductivity
Advantages of Organic Materials for Electronic Devices Lower Cost Easy Synthesis Controllable Properties
Organic Charge-Transfer (CT) complex
7
Introduction
CT complex
Composed of…Electron DonorElectron Accepter
-Conjugated Backbone+
Donor/Accepter Substituent
Donor Substituents Accepter Substituents
(In most cases)
e
Donor Molecule
Accepter Molecule
3~4 Å
8
Reversible, Nanometer-Scale Conductance Transitions in an
Organic ComplexGao, H. J.; Sohlberg, K.; Xue, Z. Q.; Chen, H. Y.; Hou, S. M.;
Ma, L. P.; Fang, X. W.; Pang, S. J.; Pennycook, S. J.
Phys. Rev. Lett. 2000, 84, 1780-1783.
Direct observation of a local structural transition for molecular
recordingwith scanning tunneling
microscopyShi, D. X.; Song, Y. L.; Zhang, H. X.; Jiang, P.;
He, S. T.; Xie, S. S.; Pang, S. J.; Gao, H. J.
Appl. Phys. Lett. 2000, 77, 3203-3205.
9
Sample; CT complex of NBMN-pDA
NBMN(3-nitrobenzal malonitrile)
pDA(1,4-phenylenediamine)
Donor Accepter
• By Deposition• Thickness of 20 nm• 1:1 Molar ratio of
Donor and Accepter Materials
HOPG; Highly Oriented Pyrolytic Graphite 高配向グラファイトTEM; Transmission Electron Microscope 透過電子顕微鏡
Polycrystalline Film on HOPG
Images of film surface
STM TEM6 × 6 nm2 600 × 600 nm2
10
Writing Marks on the Film
Voltage Pulses3.5 ~ 4.2 V, 1 s
Writing condition Imaging conditionConstant Height Mode
Vb = 0.19 V, It = 0.19 nA
Distance of Marksca. 1.7 nm
Still Identified after 2 Weeks
11
Erasing the Marks
Erasing condition
a) Heating above 423 K (Erasing all marks)
b) Applying a Reverse-polarity Voltage Pulses for longer duration (Erasing individual marks)4.5 V, 50 s
or
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Conductance Transition
I-V relation
a; Before Writing(Insulating State)
b; Recorded Mark(Conducting State)
c; HOPG Substrate(Linear I-V relation)
Conductance Transition by Voltage Pulse
13
Experimental Results
Hypothesis
Hypothesis
Localized Disorder of Molecules in the Crystal
Mechanism of Writing
Voltage Pulse
The Crystalline Film The Amorphous FilmInsulating Conducting
Localized Conductance Transition
14
Direct Observation
Direct Observation of the Mark by STM
Before Writing After Writing
The Well-ordered Molecules outside the Mark and the Disordered Molecules inside the Mark
15
Electron Diffraction
Electron Diffraction of Nonrecorded/Rcorded part
Nonconducting ConductingCrystalline Amorphous
Before Writing After Writing
16
Crystalline Thin Film of a Donor-Substituted
Cyanoethynylethene for NanoscaleData Recording Through
IntermolecularCharge-Transfer Interactions
Jiang, G. Y.; Michinobu, T.; Yuan, W. F.; Feng, M.; Wen, Y. Q.;
Du, S. X.; Gao, H. J.; Jiang, L.; Song, Y. L.; Diederich, F.; Zhu, D. B.
Adv. Mater. 2005, 17, 2170-2173.
17
Conductive Single-Component Crystal
TDMEE(1,1,2-tricyano-2-[(4-dimethylaminophenyl)ethynyl]ethene)
The packing arrangement in the crystalline thin film
Antiparallel Dipolar Alignment in the Stacks Intermolecular CT between Molecules in the Neighboring Layers
Single-Component Crystal
Easy to Make Higher-Quality Uniform Film than
Multi-Component Crystal
18
Writing on the TDMEE Thin Film
Voltage Pulses 2.64 V, 10 ms
Writing condition I-V relation curves
I) Unrecorded regionII) Recorded region
ca. 2.1 nm in diameter
Potential Storage Density; 1013 bites/cm2
19
Scanning-Tunneling Microscopy Based Thermochemical Hole Burning on a New Charge-Transfer Complex and Its Potential for Data Storage
Peng, H. L.; Ran, C. B.; Yu, X. C.; Zhang, R.; Liu, Z. F.
Adv. Mater. 2005, 17, 459-464.
20
Thermochemical Hole Burning (THB)
Thermochemical Decomposition of CT complex and Gasification of Low-Boiling-Point Material of Donor (D) Using the Heating Effect of the Current from an STM Tip
21
Sample; CT complex of DBA(TCNQ)2
TCNQ(7,7,8,8-tetracyanoquinodimethane)
DBA(dibutylammonium)
Donor Accepter• Crystallization from
Acetonitrile• 10 mm × 5 mm × 2
mm• 1:2 Molar ratio of
Donor and Accepter Materials
Single-Crystal
Crystal Structure of DBA(TCNQ)2
22
Sample; CT complex of DBA(TCNQ)2
STM Images of the DBA(TCNQ)2 Crystal Surfaceon Different Scales
23
THB on the Crystal
THB conditionVoltage Pulses 3 V, 300 s 8 V, 300 s
ca. 10 nm in diameterca. 2 nm in depth
ca. 30 nm in diameterca. 5 nm in depth
24
THB on the Crystal
Writing Nanoscale Letters
25
Hole Size Depending on Voltage
Condition
3~7 V, 300 s
7 V
6 V
5 V
4 V
3 VVoltage Threshold for THB
3 V (Pulse Duration of 300 s)
26
Heat to Decomposition
The TG analysis of DBA(TCNQ)2 crystal showed a weight loss about 5.1 wt.-%, occurred between 177 and 210 °C.
Maximum Temperature Rise by Voltage Pulse
(Estimation)
T = 1156 K (8 V × 300 s voltage pulse)
Decomposition Temperature of DBA(TCNQ)2 177 °C
Enough Heat for Decomposition of DBA(TCNQ)2
TG; Thermogravimetry 示差熱天秤
27
Verification of THB
Other Considerable Mechanisms• A Pure Surface-Conductance Change without Shape
Change
AFM Imaging Confirmed the Hole Nature.
• Oxidation
Both Changing the Writing Voltage Polarity and Performing
underN2 Atomsphere didn’t Affect the Formation of the Holes.
• Mechanical Indentation by the STM Tip
Mechanically Formed Holes are Apparently Different
from THB Holes.
a), c) THB b), d) Mechanical Indentations
c) ,d) Section analysis along the black lines shown in (a) and (b), respectively.
a)
c)
d)
AFM; Atomic Force Microscopy 原子間力顕微鏡
b)
28
Summary
Nanometer-scale conductance transition was demonstrated on organic CT complexes, by applying of localized voltage pulses using STM.
The mechanism is due to localized disorder of molecules by voltage pulses.
The system using STM has a great potential for ultra-high density data storage.
THB has another possibility for nanometer-scale recording system.