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Memory Technology Memory Technology ComparisonComparison

Memory Technology Memory Technology ComparisonComparison

Parameter Z-RAM DRAM SRAM

Size 1 1.5x 4x

Structure Single Transistor

Transistor + Cap

6 Transistor

Performance

1 0.5x 2x

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Silicon on insulator technology (SOI) refers to the use of a layered silicon-insulator-silicon substrate in place of conventional silicon substrates in semiconductor manufacturing

System-on-a-chip or system on chip (SoC or SOC) refers to integrating all components of a computer or other electronic system into a single integrated circuit (chip).

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Silicon on insulator

• Developed by IBM• Speed 30% faster than complementary metal-

oxide semiconductor (CMOS)- • Power consumption is reduced to 80%• Reduce the soft error rate • SOI microchip operate faster and cooler than

CMOS. • SIMOX (Separation by IMplantation of Oxygen) • Currently, SOI chips are used in IBM's AS/400

iSeries servers

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Z-RAM Zero - RAMZero - RAM

OrOr

Zero Capacitor Zero Capacitor – RAM– RAM

(SHRINK EMBEDDED (SHRINK EMBEDDED MEMORY) MEMORY)

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Device Overview

• Compatible with standard SOI logic or memory process

• Single Transistor bitcell• No capacitor• Small Cell Size• As scalable as CMOS• No new materials• Work for N and PMOS devices

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Architecture

• ZRAM is a library of parallel search algorithms and the corresponding data structures. The implementation is application-independent and machine-independent. The interface is user-friendly and lets non-specialists use the power of parallel computers

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Host System At the bottom of ZRAM lies a thin host-

system layer. It serves as a central place for gathering most of the machine-dependent code to ensure the portability of the other three layers. It provides the basic message-passing and time-measurement primitives in a machine-independent form. The message-passing operations are organized in two groups:1. Front end Communication2. Horizontal Communication

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Message Passing Interface (MPI-)

• Makes portable• Machine independent • Modeled on subset of standard

message passing• Send & Receive primitives of MPI-• Do parallel processing

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Service Modules

• Virtual Front end Processor • Termination detection• Dynamic Load Balancing• Check Pointing

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Virtual Machine

• It is the front hand • It has service modules that

enhance MPI-

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Search Engine

• Branch & Bound• Reverse Search• Backtracking• Tree Size Estimation

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Applications Interface

• It directly run the Applications• Separate the problem specific and

problem independent part of Applications

• Than continue it to the lower layers

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Benefits Over Traditional SRAM & DRAM

• Smaller product size • Cost savings• Manufacturing Savings• Minimal Standby Power• SOI Process• Lithography Friendly

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Conclusion While memory technologies like SRAM and DRAM have long dominated the electronics industry, the migration to ever smaller process geometries is driving the need for an alternate solution. That solution, both today and for the future, might well be Z-RAM memory technology. Its low cost and high performance enables it to act as a direct SRAM replacement in certain applications such as high density cache memories for microprocessors, game processors, and high-performance SOCs in general. Of course, Z-RAM is a high performance volatile memory, so it is not appropriate for applications where permanent storage is required. Even more important, thanks to its scalability, ZRAM is the only memory technology to date that is well positioned for use both as embedded and stand-alone memory in applications where DRAM has reached its scaling limit

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