1 Lec1 Microelectronics Sem2 2014

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Microelectronic Circuits

Lecture 1

Dt: 15‐1‐2014



Instructor-in-Charger. ye rs a me

Team of InstructorsMr.Syed Ershad Ahmed

Dr. Rashmi Sahoo

1/17/2014 ECE F244 / EEE F244 2



Course Handout

What is Microelectronics

Types of transistors

Scaling

Signals

Amplifier



•

• EEE F244

• INSTR F244

1/17/2014 ECE F244 / EEE F244 4



•

ability to

analyze

and

design

integrated

.

thorough understanding of electronic circuits

realizations of integrated circuits. The course

1/17/2014 ECE F244 / EEE F244 5



• . . , ,

“Microelectronic Circuits”,

Oxford

University

, .

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Reference books

• “

Design”, Tata

McGraw

‐Hill

Companies

Inc.,

International Edition.

• R.Jacob.Baker, Harry.W.Li,

David.Boyce,

“CMOS

c rcu es gn ayou an s mu a on. ress

series on Microelectronic Systems, PHI.

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S.No. Topic Learning Objective No. of Ref. From the Text Book (Article)

Lectures

1. Introduction to Amplifiers Characteristic of Amplifiers 2 Text chapter-1 1.4, 1.5,1.6

2 Models of MOSFET, physics of MOSFET

MOS device physics 2 Text ch- 4.1 – 4.3

3. Integrated circuit MOSFET IC MOSFET Amplifier 3 Text Ch 4--4.5, 4.6, 4.7, 4.8, 4.9

Amplifier circuits, and Frequencyresponse

design

4. Integrated circuit BJT Amplifiers,frequency response and BJT models

Discrete and IC BJTAmplifier Design

3 Text Ch 5--5.5, 5.6, 5.7, 5.8, 5.9

5. Differential amplifiers Design of differentialamplifiers

6 Text --Ch.7.1-7.7

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6. Passive and active current Design of IC bias 4 Text Ch.6.12

mirrors. circuits

7. Feedback Study of feedback 9 Text Ch.8.1-8.7

8. Operational Amplifiers Design and 6 Text Ch. 9

characterization of an

integrated circuit OP-AMP

9. Stability & frequency

compensation in OP AMP, Noise

Techniques for

stability of opamp infeedback mode.

5 Text ch-8.8-8.11

10 Illustrative examples of

integrated electronic

systems—an overview

Building of electronic

systems

2 To be announced

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EC No. Components Duration Marks Date & Time Remarks

1 Test‐1 60 mts. 60 21/2& 5.00 - 6 .00 PM CB

2 Test‐

2 60 mts. 60 1/4 & 5.00 - 6 .00 PM OB

3 Lab - 60 - -

5 Comprehensive Exam 3 hrs. 120 06/05 AN CB

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• ‐

in genuine cases.

In

all

cases

prior

intimation

1/17/2014 ECE F244 / EEE F244 11



•

the EEE/ECE Notice

board

and

CMS

only

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1/17/2014 ECE F244 / EEE F244 13



•

cancelled

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Electronics is the Science, technology and

application of charge carriers either in semiconductor,vacuum or gases.

croe ec ron cs s e ar , sc ence an ec no ogy

of designing and fabricating integrated circuits with

-

micrometer regime.

Microelectronics refers to the inte rated Circuit IC

technology that contains billions of components in asmall piece of silicon of area 100mm2.

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Transistor is considered to be

one of the greatest invention in20th century.

o ec or

A transistor is a semiconductor

Base

a special kind of resistor whose

value chan es.

This is mainly used as amplifier

Emitter

and switch.



contact rectifier.

1906: Lee De Forest proposed vacuum tube triode.

1926: Julius Lilienfeld patented the FET concept.

,Brattain create the first ‘point contact transistor’ (Bell

.



York to demonstrate their new discovery to the World.



Transistors

Bipolar Junction

Tr n i r B T

Field Effect Transistor

FET

Bipolar Advantages:

Unipolar Advantages:

Faster than FET

Hi her m

Moderate gm

Scalable TechnologyDisadvantage:

Consume more ower

Consumes less area

and power

and area.

Nonscalable technology

ess process ng s epsDisadvantages:

More processing steps Slower than BJT



Metal Oxide Semiconductor Field Effect

NMOSCMOS

PMOS

1960: First working MOS by M. M.

Atalla

and

Dawon

Kahng (Bell Labs)

1960-1970: NMOS/PMOS technology

1970: CMOS technology



Transistor

The first integrated circuits had been demonstrated in

1958 by Jack S. Kilby of Texas Instruments.

Kilb won the Nobel

Prize in Physics for

his invention of theintegrated circuit.

Consists of five components: 3 Resistors, one Transistor

and one capacitor



P4 2.4 Ghz 1.5V 131mm2



More transistors per chip

Improvement in speed

Lower power consumption



ScalinMoore`s Law (1965): the integrated circuit density

.

1975 to 32nm in 2012 and 28nm in2013.





Single stage amplifier

Differential Amplifier

Current Mirrors

Operational Amplifier



MOSFET BJT OPAMP

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Signals

Signal contains information about a variety of things

. . .

Pressure, Tem erature, S eed, some audio or video

Physical signal

ectr c s gna



Si nals are re resented b one of the two

equivalent forms.

Thevenin form

(Voltage source)

Norton form

(Current source)



Analo

Analog Circuits Digital Circuits



f(t)

t

Analog: Analogous to some physical

quantity

Digital: can be represented using

a finite number of digits

31



A (440Hz) piano key stroke

e

( μ V )

V o l t a g

• Properties:

Time (s)

– Dynamic range:

maxV

– minV

– Frequency: number of cycles in one second

32



•

entirely on

analog

signals

i tmp er

o t = A i t

33



•

• Digital signals

are

insensible

to

noise

• Boo ean a ge ra can e use to represent,

manipulate,

minimize

logic

functions• Digital signal processing is easier and relatively

less expensive than analog signal processing

34



•

quantities•

analog signals

• Di ital si nals can re resent analo si nals

with arbitrary precision (at the expense of digital circuit cost)

• Boolean algebra

is

a powerful

mathematical

tool for manipulating digital circuits

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1 Lec1 Microelectronics Sem2 2014