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1
Laboratoire d'Analyse et d'Architecture des Systèmes
du CNRS
Welcome
2
CL CSDirection
Pôles
Organisation
QuickTime™ et undécompresseur TIFF (non compressé)
sont requis pour visionner cette image.
TEAM
II
MINAS ROSA
SINCMOCOSY
OL
C
TS
F
RIA
RS
T
MO
GIS
A
MA
C
DIS
CO
ISI
MIS
M2D
NA
NO
PH
OT
O
MIN
C
MO
ST
- 75 researchers, 80 PhD, 19 Post docs
ISG
E
3
Devices and systems
Information Communication
Biology, Chemistry, Physics
Modeling
DesignCharacterization
Technological
processes
Power management
MINAS
4
Integration
Devices
and
functions
Systems
Modeling design
Technology, materials and process
Characterisation, reliability
Multi scale nano, micro, macro3D, heterogeneous,
Research strategy
5
Moore law
CMOS+ passives
MEMS RF
Sensorsactuators
MOEMS
Lab on chip
Integrated circuits
Size reduction
MagneticDielectric
Silicon membrane BCB technology
Hetero structures for laser emissionPhotonic crystal on silicon
Materials for detection and actuation(Piézo…)
Nano technologyMicrofluidic3D Packaging
New functionalities
Goals
FunctionalIntegration
6
MIS
M2D
NA
NO
PH
OT
O
MIN
C
ISG
E
Strategic axis (2007-2010)
Integrated systems for power management
Micro and nano systems for biology
Micro and nano systems for communications
Micro and nano systems design
MO
ST
7
Brest
Besançon
Limoges
Orléans
Rouen
Caen
Troyes
Tours
Clermont-Ferrand
Dijon
Avignon
Belfort
Poitiers
Vannes
Le Mans
Amiens
Ile de France
Grenoble
Toulouse
RennesBrest
Lille
Nancy
LyonSaint-
Etienne
Lannion
Montpellier
Nantes
Marseille
Angers
LAAS: Communicationpower management, biology/chemistry
Technological platform
Besançon
+Characterisation platform
8
etching and
cleaning
Plating benches
DRIE STS (4’’), RIE ICP TRIKON (1 III-V, 1 Si, SiO2, Si3N4; 1 for Metals, polymersPlasma O2 TEPLA
Furnaces: MOS oxidation, MEMS Oxidation, Diffusion, III-V AlOx process
3 EDWARDS stations, 2 ALCATEL sputtering, 1 VARIAN (MEMS, Rع D), 1 VEECO
Metallisation
Clean room facilities
9
HEIDELBERG DWL200: 5 to 20cm masks, 0.7µm resolution, direct writing on wafers
Photolithography: manual area
Photolithography:Automatic area
III-V Molecular Beam Epitaxy (2 x 32 RIBER)
E-beam writer: RAITH 150 (>20nm)
EATON ion implanter
Clean room facilities
10
• Electrical characterization
Characterisation platform
I (V) Tests: Max 10A ou 1kV AFM
• Physical characterization
UV Photoluminescence
• RF characterisation • Optical characterisation
Noise measurementNoise measurement
5 IT, 480 m 2 750m 2 new building