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© 2008 Silicon Genesis Corporation. All rights reserved.
SiGen Equipment & Applications
SiGen Equipment & Applications
© 2008 Silicon Genesis Corporation. All rights reserved.
SiGen’s technology
enables the transfer
of thin layers onto
semiconductor or
other material substrates
2 Plasma Bond Step: using a proprietary plasma-activation bond process.
3 Cleave Step (rT-CCP™): using a proprietary cleave process.
4
4
Surface Finishing Step: using a proprietary gas-phase non-contact smoothing process.
1 Cleave Plane Formation.
1
Donor
Reclaim
Surface Finish
Cleave Wafer Bond
CleavePlane
Formation
Plasma-Activation Tool DB&C Tool.
32
““Thin” Layer Transfer ProcessThin” Layer Transfer Process““Thin” Layer Transfer ProcessThin” Layer Transfer Process
© 2008 Silicon Genesis Corporation. All rights reserved.
Plasma activation bonding - Achieve equivalent bond strength at low temperatures <350C as compared to thermal wet bond treatments >800C
High surface energy for bonding of various materials
Proven HVM Process and systems –200mm and 300mm systems shipped
Standalone Plasma-Activation ToolStandalone Plasma-Activation ToolStandalone Plasma-Activation ToolStandalone Plasma-Activation Tool
© 2008 Silicon Genesis Corporation. All rights reserved.
Standalone Plasma-Activation ToolStandalone Plasma-Activation ToolStandalone Plasma-Activation ToolStandalone Plasma-Activation Tool
© 2008 Silicon Genesis Corporation. All rights reserved.
rT-CCP™
- Low as-cleaved surface roughness - Uniform long range surface roughness
Enables cleaving of dissimilar materials – SOQ, SOG, GeOI
Proven HVM Process and systems – 200mm and 300mm systems shipped
SiGen’s DB&C ToolSiGen’s DB&C ToolSiGen’s DB&C ToolSiGen’s DB&C Tool
© 2008 Silicon Genesis Corporation. All rights reserved.
SiGen’s DB&C ToolSiGen’s DB&C ToolSiGen’s DB&C ToolSiGen’s DB&C Tool
© 2008 Silicon Genesis Corporation. All rights reserved.
IP (Patents License)
Layer-Transfer Technologies - Thin Layer-Transfer - Plasma Bonding - Layer-Transfer - Surface Finishing Equipment Technologies - Plasma Tool Technology - rT-CCP™ Cleave Tool Technology
New Material Building Blocks - Strained-SOI - GeOI - SOQ - SOG - Si on CMOS
SiGen’s Integrated SolutionSiGen’s Integrated SolutionSiGen’s Integrated SolutionSiGen’s Integrated Solution
© 2008 Silicon Genesis Corporation. All rights reserved.
Cold Process – Allows unique dissimilar material systems
Non-Contact Smoothing – Best ultra-thin SOI uniformity
Plasma-Bonding – Excellent dry fusion bond specifications - Wide applicability in multiple fields - Unique In-Situ bond technology
Proven Compatibility - With next-generation applications - With existing semiconductor process equipment
Allow high-yield and cost-effective formation of 3D, SOI, SOQ, SOG, GeOI, and other
material systems
SiGen’s InnovationsSiGen’s InnovationsSiGen’s InnovationsSiGen’s Innovations
© 2008 Silicon Genesis Corporation. All rights reserved.
SemiconductorApplications
SemiconductorApplications
© 2008 Silicon Genesis Corporation. All rights reserved.
Multiple commercial license Development of strained-SOI ongoing 200mm and 300mm SOI proven in production New strained-SOI developed and being implemented
300mm SOI Wafer300mm SOI Wafer Strained-SOI (SSOI)Strained-SOI (SSOI)
SOI & Strained SOI ApplicationSOI & Strained SOI ApplicationSOI & Strained SOI ApplicationSOI & Strained SOI Application
© 2008 Silicon Genesis Corporation. All rights reserved.
Si-Si Hybrid Orientation Technology
As-Cleaved EPI-Smooth + Anneal
<110> direction (across and along view)
<110> direction (across and along view)
DSB – Direct Silicon BondDSB – Direct Silicon BondDSB – Direct Silicon BondDSB – Direct Silicon Bond
© 2008 Silicon Genesis Corporation. All rights reserved.
Stacked CMOS/Device StructuresStacked CMOS/Device StructuresStacked CMOS/Device StructuresStacked CMOS/Device Structures
SiGen’s layer-transfer can be used for building stacked devices
- Build CMOS/Device substrate with interconnects - Deposit CVD oxide and polish - Bond & cleave silicon film (1000-5000Å range) - Post-cleave processing
Deposit CVD Oxide/Polish
2
PA Bond
3
Processed CMOS Wafer
1
CleaveWafer
4
Post Processing
5
Processed CMOS Substrate
Donor
ReclaimCleavable Wafer Donor
Wafer
© 2008 Silicon Genesis Corporation. All rights reserved.
Quartz base substrate for optical and RF applications
Single-crystal silicon layer
Higher quality and performance for HDTV Projectors
- Better brightness - Lower Cost - Higher Resolution - Faster speed - Higher circuit density
Silicon on Quartz (SOQ) ApplicationSilicon on Quartz (SOQ) ApplicationSilicon on Quartz (SOQ) ApplicationSilicon on Quartz (SOQ) Application
© 2008 Silicon Genesis Corporation. All rights reserved.
Large-Area Glass (SOG)Large-Area Glass (SOG)
300mm Silicon Wafer Silicon
Tile
Silicon Tile[180mm x 230mm]
Gen 2 Glass[370mm x 470mm]
Gen 2 Glass[370mm x 470mm]
Donor
Tile Plates
A
CB
