• Home

  • Documents

  •  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak...
16

 · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z

Embed Size (px)

Citation preview

Page 1:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 2:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 3:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 4:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 5:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 6:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 7:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 8:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 9:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 10:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 11:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 12:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 13:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 14:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 15:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z
Page 16:  · 2007 1 wlx ink40z pi ink40z pi ink40zfp sc 15010 ... v dgr v gs p tot v esd (gs to-220 /dzpak 5.67 ... c oss eq. o so v dss . stb11nk40z

Comparison between i g integration and v gs derivation

Comparison between i g integration and v gs derivation

Documents
Raspberry Pi with LabVIEW LINX - Telemark University …home.hit.no/~hansha/documents/lab/Lab Equipment/Raspberry Pi... · Contents: v Information v Software installation v RaspberryPi

Raspberry Pi with LabVIEW LINX - Telemark University …home.hit.no/~hansha/documents/lab/Lab Equipment/Raspberry Pi... · Contents: v Information v Software installation v RaspberryPi

Documents
ECE137A, notes set 2: MOSFETs - UCSB · MOSFETs: Three Regions of Gate Voltage ( )2 is a e ed, is y d D gs th gs I V V v n V gs is ssnld,or is ) ff : " o" ' V | v t L g / P ( / 2)

ECE137A, notes set 2: MOSFETs - UCSB · MOSFETs: Three Regions of Gate Voltage ( )2 is a e ed, is y d D gs th gs I V V v n V gs is ssnld,or is ) ff : " o" ' V | v t L g / P ( / 2)

Documents
SERIES LP-GS LP-V LP-S - PSD API

SERIES LP-GS LP-V LP-S - PSD API

Documents
CHAPTER 12 - LTH · CHAPTER 12 Exercises E12.1 (a) v GS = 1 V and v DS = 5 V: Because we have v GS < V to, the FET is in cutoff. (b) v GS = 3 V and v DS = 0.5 V: Because v

CHAPTER 12 - LTH · CHAPTER 12 Exercises E12.1 (a) v GS = 1 V and v DS = 5 V: Because we have v GS < V to, the FET is in cutoff. (b) v GS = 3 V and v DS = 0.5 V: Because v

Documents
MOSFET MOSFET – IV Characteristicsese570/spring2017/handouts/lec3_6up.pdf · 2 MOSFET – Zeroeth Order Model ! Ideal Switch V GS > V th # switch is closed, conducts V GS

MOSFET MOSFET – IV Characteristicsese570/spring2017/handouts/lec3_6up.pdf · 2 MOSFET – Zeroeth Order Model ! Ideal Switch V GS > V th # switch is closed, conducts V GS

Documents
NCE N-Channel Enhancement Mode Power MOSFET · DS=V GS,I D=-250μA -0.7 -1 -1.3 V V GS=-10V, I D=-4.2A - 2227 mΩ Drain-Source On-State Resistance R DS(ON) V GS=-4.5V, I D=-4A - 25

NCE N-Channel Enhancement Mode Power MOSFET · DS=V GS,I D=-250μA -0.7 -1 -1.3 V V GS=-10V, I D=-4.2A - 2227 mΩ Drain-Source On-State Resistance R DS(ON) V GS=-4.5V, I D=-4A - 25

Documents
INN650D02 D INN650D02 D - szjuquan.como(er) - 29 - pF V GS = 0 V; V DS = 0 to 400 V Effective output capacitance, time related2 C o(tr) - 44 - pF V GS = 0 V; V DS = 0 to 400 V Output

INN650D02 D INN650D02 D - szjuquan.como(er) - 29 - pF V GS = 0 V; V DS = 0 to 400 V Effective output capacitance, time related2 C o(tr) - 44 - pF V GS = 0 V; V DS = 0 to 400 V Output

Documents
Blackberry v. Typo - Order Granting PI

Blackberry v. Typo - Order Granting PI

Documents
CHAPTER 12 · 2010. 2. 4. · CHAPTER 12 Exercises E12.1 (a) v GS = 1 V and v DS = 5 V: Because we have v GS < V to, the FET is in cutoff. (b) v GS = 3 V and v DS = 0.5 V: Because

CHAPTER 12 · 2010. 2. 4. · CHAPTER 12 Exercises E12.1 (a) v GS = 1 V and v DS = 5 V: Because we have v GS < V to, the FET is in cutoff. (b) v GS = 3 V and v DS = 0.5 V: Because

Documents
Gs company presentation 3 q17 v.2

Gs company presentation 3 q17 v.2

Investor Relations
gs pam v-branch broch - gardenstatefcu.org

gs pam v-branch broch - gardenstatefcu.org

Documents
Ark. -Pi neBluf (16 )v sa 53

Ark. -Pi neBluf (16 )v sa 53

Documents
J D(2, TAB) · GS(th) Gate threshold voltage V DS = V GS, I D = 1 mA 1.8 3.5 V R DS(on) Static drain-source on- resistance V GS = 20 V, I D = 20 A 80 100 mΩ V GS = 20 V, I D = 20

J D(2, TAB) · GS(th) Gate threshold voltage V DS = V GS, I D = 1 mA 1.8 3.5 V R DS(on) Static drain-source on- resistance V GS = 20 V, I D = 20 A 80 100 mΩ V GS = 20 V, I D = 20

Documents
Datasheet - STL90N10F7 - N-channel 100 V, 7 mΩ typ., 70 A … · IGSS Gate-body leakage current VDS = 0 V, VGS = 20 V 100 nA V GS(th) Gate threshold voltage V DS = V GS , I D = 250

Datasheet - STL90N10F7 - N-channel 100 V, 7 mΩ typ., 70 A … · IGSS Gate-body leakage current VDS = 0 V, VGS = 20 V 100 nA V GS(th) Gate threshold voltage V DS = V GS , I D = 250

Documents
EPC2055 – Enhancement Mode Power Transistor · 2020. 12. 16. · Figure Typica O C aac te a DS DaSe ae V GS 5 V V GS V V GS V V GS 2 V D Da e A GS GaeSe ae 0.5 1.0 1.5 2.0 2.5 3.0

EPC2055 – Enhancement Mode Power Transistor · 2020. 12. 16. · Figure Typica O C aac te a DS DaSe ae V GS 5 V V GS V V GS V V GS 2 V D Da e A GS GaeSe ae 0.5 1.0 1.5 2.0 2.5 3.0

Documents
FeaturesDFN2020-6J...=250µA 0.35 0.7 1.0 V Gate-Body Leakage Current I GSS V GS =± 10V, V DS =0V ±100 nA Zero Gate Voltage Drain Current I DSS V DS =20V, V GS =0V 1 µA V GS =4.5V,

FeaturesDFN2020-6J...=250µA 0.35 0.7 1.0 V Gate-Body Leakage Current I GSS V GS =± 10V, V DS =0V ±100 nA Zero Gate Voltage Drain Current I DSS V DS =20V, V GS =0V 1 µA V GS =4.5V,

Documents
Surge Protector - Installation Instruction Type PI 3_3 MCB GS (

Surge Protector - Installation Instruction Type PI 3_3 MCB GS (

Documents
Pi i 002239139090125 V

Pi i 002239139090125 V

Documents
Power MOSFET - st.com · 6 N-ChANNel STripFeT >30 V To 350 V (CoNT’D) Part Number V DSS (V) R DS(on) (max) @ V GS 10 V (Ω) R (max) GS 4.5 V or 5 V (W) Automotive Grade I D(Cont)

Power MOSFET - st.com · 6 N-ChANNel STripFeT >30 V To 350 V (CoNT’D) Part Number V DSS (V) R DS(on) (max) @ V GS 10 V (Ω) R (max) GS 4.5 V or 5 V (W) Automotive Grade I D(Cont)

Documents
CU v Schneiderman -- PI Opinion & Order

CU v Schneiderman -- PI Opinion & Order

Documents
GN012 Application Note - GaN Systems · 2020. 5. 25. · GS. for GaN), a negative V. GS. generating circuit is required to converter the V. GS . into +6/-(V. DD ... Most popular solutions:

GN012 Application Note - GaN Systems · 2020. 5. 25. · GS. for GaN), a negative V. GS. generating circuit is required to converter the V. GS . into +6/-(V. DD ... Most popular solutions:

Documents
ECEN325: Electronics Spring 2021[Sedra/Smith] L x V GC x V GS V x V GS V DS • When V DS V GS-V TH=V OV, V GC no longer exceeds V TH, resulting in the channel “pinching off” and

ECEN325: Electronics Spring 2021[Sedra/Smith] L x V GC x V GS V x V GS V DS • When V DS V GS-V TH=V OV, V GC no longer exceeds V TH, resulting in the channel “pinching off” and

Documents
1 Gs Co1 Cu Leaflet Js V E Mail

1 Gs Co1 Cu Leaflet Js V E Mail

Education
Piping Engineering Standards PRD-PI-GS-001 · 2020. 4. 13. · Piping Engineering Standards PRD-PI-GS-001 Issue No.: 0 5 of 58 Issue Date: 17.11.2019 Piping passing through concrete

Piping Engineering Standards PRD-PI-GS-001 · 2020. 4. 13. · Piping Engineering Standards PRD-PI-GS-001 Issue No.: 0 5 of 58 Issue Date: 17.11.2019 Piping passing through concrete

Documents
Digital Integrated Circuits · 2017. 6. 20. · Leakage Summary •Subthreshold Leakage: •I DS >0 when V GS

Digital Integrated Circuits · 2017. 6. 20. · Leakage Summary •Subthreshold Leakage: •I DS >0 when V GS

Documents
PD V PI V B - Long Reach

PD V PI V B - Long Reach

Documents
20V P-Channel MOSFET · AON7407 20V P-Channel MOSFET General Description Product Summary VDS I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-4.5V) < 9.5m Ω R DS(ON) (at V GS =-2.5V)

20V P-Channel MOSFET · AON7407 20V P-Channel MOSFET General Description Product Summary VDS I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-4.5V) < 9.5m Ω R DS(ON) (at V GS =-2.5V)

Documents
Comparison of INSTI vs PI FLAMINGO GS-236-0103 ACTG A5257 WAVES

Comparison of INSTI vs PI FLAMINGO GS-236-0103 ACTG A5257 WAVES

Documents
Sabika v. Goshen - Motion for PI & Brief

Sabika v. Goshen - Motion for PI & Brief

Documents