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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
Semiconductor amp Integrated Circuit LabMillimeter-wave INovation Technology research center
Research accomplishment (2003 ~ )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University1
Research field
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University2
What is Millimeter-wave
30 300 3000
Micro-wave Millimeter-wave Submillimeter-wave
10 1 01
Frequency (GHz)
Wave-length (mm)
Wide bandwidth high data rate and high speedwireless communication applications
Short wavelength small-sized and light-weighted circuit systems
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University3
1 Large spectrum availability
rArr Broadband system
rArr Unused frequency bands
2 High reuse potential of frequency
rArr Short range communications from a few meters up to few kilometers
3 Small antenna and system size
rArr Very short wavelength
Advantages of Millimeter-wave
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Requirement of Millimeter-wave Monolithic integrated Circuits
Millimeter-waveApplications
ITS
Military
WLANImaging
system
Imaging
system
Medical
Examples of Millimeter-wave applications
4
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University5
Mask Aligner ICP-Dry etcher
FC Bonder
E-Beam Lithography
Thermal Evaporator ULVAC EBV-10
Rapid Thermal Process System (RTP) KVR-020
Plasma Enhanced Chemical Vapor Deposition (PECVD) JCSS-41MR
O2 Plasma Asher Oxford plasma lab 80 plus
Mask Aligner Karl Suss MA6
Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) KVICP-T4083
E-Beam Evaporator System KVE-T5560
E-Beam Lithography System Leica EBPG-4HR
Au Plating System
Vacuum Dry Oven SB-CD520
Lapping Machine Allied MultiPrep TM System
Furnace Metritherm
Surface Profiler a-step 200
Thin Film Analyzer Tyger
Flip Chip Bonder Laurier M9
Wedge bonder Hybond 572-A
Ball bonder Hybond 626
Spectrum amp Vector Network Analyzer
Semiconductor Characterization System Keithley 4200-PCS
Ansys HFSS amp Agilent ADS Simulation Program
Plasma Asher
Furnace
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University6
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University7
Fabricated MHEMT
GaAs-based 70 nm MHEMTs
lt70 microm times 2 MHEMTgt ltResist profile of gate footgt
70 nm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University8
70 nm Gate Metamorphic HEMT
Si3N4 passivation 800 Å
Gate length 70 nm
Double exposure method
Tri-layer resist stack
ZEP520 DCB = 15 1
PMGI
PMMA950K MCB = 1 1Gate metal formation
TiAu = 5004500 ÅSEM view of fabricated 70 nm gate
Development of MMIC Libraries
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University9
DC performance- Drain current density 607 mAmm
- Transconductance (gm) 1015 Smm
lt I-V characteristics gt lt Transconductance characteristics gt
70 nm times140 microm MHEMT (1)
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University1
Research field
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University2
What is Millimeter-wave
30 300 3000
Micro-wave Millimeter-wave Submillimeter-wave
10 1 01
Frequency (GHz)
Wave-length (mm)
Wide bandwidth high data rate and high speedwireless communication applications
Short wavelength small-sized and light-weighted circuit systems
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University3
1 Large spectrum availability
rArr Broadband system
rArr Unused frequency bands
2 High reuse potential of frequency
rArr Short range communications from a few meters up to few kilometers
3 Small antenna and system size
rArr Very short wavelength
Advantages of Millimeter-wave
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Requirement of Millimeter-wave Monolithic integrated Circuits
Millimeter-waveApplications
ITS
Military
WLANImaging
system
Imaging
system
Medical
Examples of Millimeter-wave applications
4
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University5
Mask Aligner ICP-Dry etcher
FC Bonder
E-Beam Lithography
Thermal Evaporator ULVAC EBV-10
Rapid Thermal Process System (RTP) KVR-020
Plasma Enhanced Chemical Vapor Deposition (PECVD) JCSS-41MR
O2 Plasma Asher Oxford plasma lab 80 plus
Mask Aligner Karl Suss MA6
Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) KVICP-T4083
E-Beam Evaporator System KVE-T5560
E-Beam Lithography System Leica EBPG-4HR
Au Plating System
Vacuum Dry Oven SB-CD520
Lapping Machine Allied MultiPrep TM System
Furnace Metritherm
Surface Profiler a-step 200
Thin Film Analyzer Tyger
Flip Chip Bonder Laurier M9
Wedge bonder Hybond 572-A
Ball bonder Hybond 626
Spectrum amp Vector Network Analyzer
Semiconductor Characterization System Keithley 4200-PCS
Ansys HFSS amp Agilent ADS Simulation Program
Plasma Asher
Furnace
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University6
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University7
Fabricated MHEMT
GaAs-based 70 nm MHEMTs
lt70 microm times 2 MHEMTgt ltResist profile of gate footgt
70 nm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University8
70 nm Gate Metamorphic HEMT
Si3N4 passivation 800 Å
Gate length 70 nm
Double exposure method
Tri-layer resist stack
ZEP520 DCB = 15 1
PMGI
PMMA950K MCB = 1 1Gate metal formation
TiAu = 5004500 ÅSEM view of fabricated 70 nm gate
Development of MMIC Libraries
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University9
DC performance- Drain current density 607 mAmm
- Transconductance (gm) 1015 Smm
lt I-V characteristics gt lt Transconductance characteristics gt
70 nm times140 microm MHEMT (1)
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
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Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
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Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
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Development of Radiometer Receiver
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An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
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Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
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Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
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Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
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80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
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Detector ndash TransitionSystem Specification
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Detector ndash OutputSystem Specification
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Size ndash Array SystemSystem Specification
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Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
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System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
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Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
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Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
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Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
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Video Demo
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Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University2
What is Millimeter-wave
30 300 3000
Micro-wave Millimeter-wave Submillimeter-wave
10 1 01
Frequency (GHz)
Wave-length (mm)
Wide bandwidth high data rate and high speedwireless communication applications
Short wavelength small-sized and light-weighted circuit systems
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University3
1 Large spectrum availability
rArr Broadband system
rArr Unused frequency bands
2 High reuse potential of frequency
rArr Short range communications from a few meters up to few kilometers
3 Small antenna and system size
rArr Very short wavelength
Advantages of Millimeter-wave
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Requirement of Millimeter-wave Monolithic integrated Circuits
Millimeter-waveApplications
ITS
Military
WLANImaging
system
Imaging
system
Medical
Examples of Millimeter-wave applications
4
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University5
Mask Aligner ICP-Dry etcher
FC Bonder
E-Beam Lithography
Thermal Evaporator ULVAC EBV-10
Rapid Thermal Process System (RTP) KVR-020
Plasma Enhanced Chemical Vapor Deposition (PECVD) JCSS-41MR
O2 Plasma Asher Oxford plasma lab 80 plus
Mask Aligner Karl Suss MA6
Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) KVICP-T4083
E-Beam Evaporator System KVE-T5560
E-Beam Lithography System Leica EBPG-4HR
Au Plating System
Vacuum Dry Oven SB-CD520
Lapping Machine Allied MultiPrep TM System
Furnace Metritherm
Surface Profiler a-step 200
Thin Film Analyzer Tyger
Flip Chip Bonder Laurier M9
Wedge bonder Hybond 572-A
Ball bonder Hybond 626
Spectrum amp Vector Network Analyzer
Semiconductor Characterization System Keithley 4200-PCS
Ansys HFSS amp Agilent ADS Simulation Program
Plasma Asher
Furnace
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GaAs-based 70 nm MHEMTs
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Fabricated MHEMT
GaAs-based 70 nm MHEMTs
lt70 microm times 2 MHEMTgt ltResist profile of gate footgt
70 nm
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70 nm Gate Metamorphic HEMT
Si3N4 passivation 800 Å
Gate length 70 nm
Double exposure method
Tri-layer resist stack
ZEP520 DCB = 15 1
PMGI
PMMA950K MCB = 1 1Gate metal formation
TiAu = 5004500 ÅSEM view of fabricated 70 nm gate
Development of MMIC Libraries
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DC performance- Drain current density 607 mAmm
- Transconductance (gm) 1015 Smm
lt I-V characteristics gt lt Transconductance characteristics gt
70 nm times140 microm MHEMT (1)
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
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fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
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DAML(Dielectric-supported Air-gapped Microstrip Line)
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Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
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Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
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Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
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w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
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Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
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Dielectric Post
Fabricated DAML
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Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
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Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
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Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
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Fabricated DAML (height = 17 microm)
Fabricated DAML
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Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
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Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
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CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
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Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
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Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
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Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
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W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
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S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
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Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
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Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
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60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
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Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University3
1 Large spectrum availability
rArr Broadband system
rArr Unused frequency bands
2 High reuse potential of frequency
rArr Short range communications from a few meters up to few kilometers
3 Small antenna and system size
rArr Very short wavelength
Advantages of Millimeter-wave
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Requirement of Millimeter-wave Monolithic integrated Circuits
Millimeter-waveApplications
ITS
Military
WLANImaging
system
Imaging
system
Medical
Examples of Millimeter-wave applications
4
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University5
Mask Aligner ICP-Dry etcher
FC Bonder
E-Beam Lithography
Thermal Evaporator ULVAC EBV-10
Rapid Thermal Process System (RTP) KVR-020
Plasma Enhanced Chemical Vapor Deposition (PECVD) JCSS-41MR
O2 Plasma Asher Oxford plasma lab 80 plus
Mask Aligner Karl Suss MA6
Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) KVICP-T4083
E-Beam Evaporator System KVE-T5560
E-Beam Lithography System Leica EBPG-4HR
Au Plating System
Vacuum Dry Oven SB-CD520
Lapping Machine Allied MultiPrep TM System
Furnace Metritherm
Surface Profiler a-step 200
Thin Film Analyzer Tyger
Flip Chip Bonder Laurier M9
Wedge bonder Hybond 572-A
Ball bonder Hybond 626
Spectrum amp Vector Network Analyzer
Semiconductor Characterization System Keithley 4200-PCS
Ansys HFSS amp Agilent ADS Simulation Program
Plasma Asher
Furnace
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University6
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University7
Fabricated MHEMT
GaAs-based 70 nm MHEMTs
lt70 microm times 2 MHEMTgt ltResist profile of gate footgt
70 nm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University8
70 nm Gate Metamorphic HEMT
Si3N4 passivation 800 Å
Gate length 70 nm
Double exposure method
Tri-layer resist stack
ZEP520 DCB = 15 1
PMGI
PMMA950K MCB = 1 1Gate metal formation
TiAu = 5004500 ÅSEM view of fabricated 70 nm gate
Development of MMIC Libraries
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University9
DC performance- Drain current density 607 mAmm
- Transconductance (gm) 1015 Smm
lt I-V characteristics gt lt Transconductance characteristics gt
70 nm times140 microm MHEMT (1)
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
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Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
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Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
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CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
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W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
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S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
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3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
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For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
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Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
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MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
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MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
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Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
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Introduction
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IntroductionMotivation
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IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Requirement of Millimeter-wave Monolithic integrated Circuits
Millimeter-waveApplications
ITS
Military
WLANImaging
system
Imaging
system
Medical
Examples of Millimeter-wave applications
4
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University5
Mask Aligner ICP-Dry etcher
FC Bonder
E-Beam Lithography
Thermal Evaporator ULVAC EBV-10
Rapid Thermal Process System (RTP) KVR-020
Plasma Enhanced Chemical Vapor Deposition (PECVD) JCSS-41MR
O2 Plasma Asher Oxford plasma lab 80 plus
Mask Aligner Karl Suss MA6
Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) KVICP-T4083
E-Beam Evaporator System KVE-T5560
E-Beam Lithography System Leica EBPG-4HR
Au Plating System
Vacuum Dry Oven SB-CD520
Lapping Machine Allied MultiPrep TM System
Furnace Metritherm
Surface Profiler a-step 200
Thin Film Analyzer Tyger
Flip Chip Bonder Laurier M9
Wedge bonder Hybond 572-A
Ball bonder Hybond 626
Spectrum amp Vector Network Analyzer
Semiconductor Characterization System Keithley 4200-PCS
Ansys HFSS amp Agilent ADS Simulation Program
Plasma Asher
Furnace
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University6
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University7
Fabricated MHEMT
GaAs-based 70 nm MHEMTs
lt70 microm times 2 MHEMTgt ltResist profile of gate footgt
70 nm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University8
70 nm Gate Metamorphic HEMT
Si3N4 passivation 800 Å
Gate length 70 nm
Double exposure method
Tri-layer resist stack
ZEP520 DCB = 15 1
PMGI
PMMA950K MCB = 1 1Gate metal formation
TiAu = 5004500 ÅSEM view of fabricated 70 nm gate
Development of MMIC Libraries
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University9
DC performance- Drain current density 607 mAmm
- Transconductance (gm) 1015 Smm
lt I-V characteristics gt lt Transconductance characteristics gt
70 nm times140 microm MHEMT (1)
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
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IntroductionPrivate issue
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Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
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Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
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Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
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Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
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Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
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Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
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Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
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Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
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Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
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Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
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Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
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80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
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Detector ndash TransitionSystem Specification
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Detector ndash OutputSystem Specification
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Size ndash Array SystemSystem Specification
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Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
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System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
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Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
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Comparison with Commercial MMW Imaging
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Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
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Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
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Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
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ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University5
Mask Aligner ICP-Dry etcher
FC Bonder
E-Beam Lithography
Thermal Evaporator ULVAC EBV-10
Rapid Thermal Process System (RTP) KVR-020
Plasma Enhanced Chemical Vapor Deposition (PECVD) JCSS-41MR
O2 Plasma Asher Oxford plasma lab 80 plus
Mask Aligner Karl Suss MA6
Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) KVICP-T4083
E-Beam Evaporator System KVE-T5560
E-Beam Lithography System Leica EBPG-4HR
Au Plating System
Vacuum Dry Oven SB-CD520
Lapping Machine Allied MultiPrep TM System
Furnace Metritherm
Surface Profiler a-step 200
Thin Film Analyzer Tyger
Flip Chip Bonder Laurier M9
Wedge bonder Hybond 572-A
Ball bonder Hybond 626
Spectrum amp Vector Network Analyzer
Semiconductor Characterization System Keithley 4200-PCS
Ansys HFSS amp Agilent ADS Simulation Program
Plasma Asher
Furnace
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GaAs-based 70 nm MHEMTs
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Fabricated MHEMT
GaAs-based 70 nm MHEMTs
lt70 microm times 2 MHEMTgt ltResist profile of gate footgt
70 nm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University8
70 nm Gate Metamorphic HEMT
Si3N4 passivation 800 Å
Gate length 70 nm
Double exposure method
Tri-layer resist stack
ZEP520 DCB = 15 1
PMGI
PMMA950K MCB = 1 1Gate metal formation
TiAu = 5004500 ÅSEM view of fabricated 70 nm gate
Development of MMIC Libraries
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University9
DC performance- Drain current density 607 mAmm
- Transconductance (gm) 1015 Smm
lt I-V characteristics gt lt Transconductance characteristics gt
70 nm times140 microm MHEMT (1)
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
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Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
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Fabricated DAML (height = 17 microm)
Fabricated DAML
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Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
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W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
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Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University6
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University7
Fabricated MHEMT
GaAs-based 70 nm MHEMTs
lt70 microm times 2 MHEMTgt ltResist profile of gate footgt
70 nm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University8
70 nm Gate Metamorphic HEMT
Si3N4 passivation 800 Å
Gate length 70 nm
Double exposure method
Tri-layer resist stack
ZEP520 DCB = 15 1
PMGI
PMMA950K MCB = 1 1Gate metal formation
TiAu = 5004500 ÅSEM view of fabricated 70 nm gate
Development of MMIC Libraries
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University9
DC performance- Drain current density 607 mAmm
- Transconductance (gm) 1015 Smm
lt I-V characteristics gt lt Transconductance characteristics gt
70 nm times140 microm MHEMT (1)
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
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Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
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Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
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Fabricated DAML (height = 17 microm)
Fabricated DAML
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Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
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CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
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W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
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S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
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3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
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For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
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Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
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MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
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Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
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ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
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MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
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70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
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Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
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Introduction
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IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University7
Fabricated MHEMT
GaAs-based 70 nm MHEMTs
lt70 microm times 2 MHEMTgt ltResist profile of gate footgt
70 nm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University8
70 nm Gate Metamorphic HEMT
Si3N4 passivation 800 Å
Gate length 70 nm
Double exposure method
Tri-layer resist stack
ZEP520 DCB = 15 1
PMGI
PMMA950K MCB = 1 1Gate metal formation
TiAu = 5004500 ÅSEM view of fabricated 70 nm gate
Development of MMIC Libraries
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University9
DC performance- Drain current density 607 mAmm
- Transconductance (gm) 1015 Smm
lt I-V characteristics gt lt Transconductance characteristics gt
70 nm times140 microm MHEMT (1)
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
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Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
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Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
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Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
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Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
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Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
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Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
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Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
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Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
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Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
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Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
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80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
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Detector ndash TransitionSystem Specification
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Detector ndash OutputSystem Specification
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Size ndash Array SystemSystem Specification
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Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
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System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
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Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
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Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
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70 nm Gate Metamorphic HEMT
Si3N4 passivation 800 Å
Gate length 70 nm
Double exposure method
Tri-layer resist stack
ZEP520 DCB = 15 1
PMGI
PMMA950K MCB = 1 1Gate metal formation
TiAu = 5004500 ÅSEM view of fabricated 70 nm gate
Development of MMIC Libraries
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University9
DC performance- Drain current density 607 mAmm
- Transconductance (gm) 1015 Smm
lt I-V characteristics gt lt Transconductance characteristics gt
70 nm times140 microm MHEMT (1)
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
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Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University9
DC performance- Drain current density 607 mAmm
- Transconductance (gm) 1015 Smm
lt I-V characteristics gt lt Transconductance characteristics gt
70 nm times140 microm MHEMT (1)
GaAs-based 70 nm MHEMTs
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
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Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
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Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
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Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
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CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
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W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
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S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
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(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
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60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
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Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
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Measured Results
Passive Device using DAML Technology
41
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3-D W-band Single Balanced Active Mixer
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Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
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Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
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For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
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Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
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MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
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Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
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ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
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MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
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70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
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Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
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LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
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Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
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Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
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Introduction
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IntroductionMotivation
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IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
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InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University10
70 nm times140 microm MHEMT (2)
lt RF characteristics gt
330 GHz
425 GHz
GaAs-based 70 nm MHEMTs
- fT 330 GHz
- fmax 425 GHz
RF performance
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University11
fT comparison of HEMTs
[1][2]
[3]
[4]
[5]
[6] [7]
[8] [9]
[10]
This work
[1] Y Yamashita et al IEEE Electron Device Letters
vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters
vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices
vol 49 no 10 pp 1694-1700 2002[4] K Shinohara et al IEEE Electron Device Letters
vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest
vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters
vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and
Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and
Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest
pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters
vol 25 no 6 pp 348-350 2004
GaAs-based 70 nm MHEMTs
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
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Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
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Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
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W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
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3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
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MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
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Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
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Detector ndash TransitionSystem Specification
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Detector ndash OutputSystem Specification
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Size ndash Array SystemSystem Specification
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Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
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System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
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Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University12
DAML(Dielectric-supported Air-gapped Microstrip Line)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
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Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
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Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
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Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
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Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
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Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
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Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
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Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
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Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
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80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
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Detector ndash TransitionSystem Specification
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Detector ndash OutputSystem Specification
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Size ndash Array SystemSystem Specification
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Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
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System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
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Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
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Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University13
Transmission line
Basic elements
Major cause of device loss
Motivation of DAML (1)
SubstrateSubstrate
Conventional transmission lines
Substrate loss
Demand of MEMS technology
Motivation of DAML
Microstrip line CPW line
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University14
Substrate 1
Substrate 2
Substrate
(1)
(2)
(3)
Shielded Membrane Microstrip
(1) Shield cover 2 Masks
(2) Membrane plane 3 Masks
(3) Ground plane 1 Masks
Motivation of DAML (2)
Complex processes
Difficulty of integration withMMICMIMIC
Shielded Membrane Microstrip
DAML technology
Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998
Motivation of DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
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Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
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Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
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InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
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Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
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Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
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Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University15
Surface micromachined transmission line Reduced substrate loss due to elevated signal line
Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process
Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)
Possibility of vertical integration (3-D integration)
SI GaAs substrate
Dielectric post
Signal line
Ground
DAML Dielectric-supported Air-gapped Microstrip Line
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University16
w
d
h
g
3h ⅹ2 + w
Formula for Effective Dielectric Constant in Partial Dielectric Layer
h Dielectric post height (microm) w Signal line width (microm)
g Dielectric post gap (microm)
d Dielectric post size (microm)
3hⅹ2 + w Field area (by Ansoft HFSS)
The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)
wh
whgd
whgd
polyimidepolyimide
eff
121
12
1)23(
1
2
1)23(
12
2
DAML
)23(1
2
whgd
polyimider
Dielectric constant of DAML-Substrate is 1108 by calculation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University17
Process flow of the DAML
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Semi-insulating GaAs substrate
Sacrificial layer (AZ4903)patterning
Seed metal (TiAu)evaporation and
Electro-molding (AZ4903)formation
Signal line (Au) formationand sacrificial layer removal
Ground metal (TiAu) anddielectric post (polyimide)
formation
Process flow of the DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University18
Dielectric Post
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
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Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
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Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University19
Sacrificial Layer
Fabricated DAML
Reflow the photoresist for smooth metal overlay
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University20
Fabricated DAML
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
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Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
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Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
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Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
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Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University21
Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3
2001 pp 1881-1884
[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B
vol 21 no 2 pp 171-176 1998
[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques
vol 46 no 5 pp 623-631 1998
[4] YC Shih et al Microwave Journal
pp 95-105 1991
[5] Youngwoo Kwon et al IEEE Microwave
and Wireless Components Letters
vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave
Theory and Techniques
vol 46 no 11 1998 pp 1845-1849 1998
This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005
This work H S Lee et al IEE Electronics Letters
vol 39 no 25 pp 1827-1828 2003
DAML Characteristic
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Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
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Fabricated DAML (height = 17 microm)
Fabricated DAML
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Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
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Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
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CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
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Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
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Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
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Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
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W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
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S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
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Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
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Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
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Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
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60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
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Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
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Measured Results
Passive Device using DAML Technology
41
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3-D W-band Single Balanced Active Mixer
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Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
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Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
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For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
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Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
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MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
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Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
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ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
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MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
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70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
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Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
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Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
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Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
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Introduction
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IntroductionMotivation
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IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
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Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University22
Shielded DAML using Flip chip technique
h Dielectric post height w Signal line width
g Dielectric post gap
d Dielectric post size
Lower Ground Plane
Upper Ground Plane
Polyimide Dielectric post
Air-bridged Signal line
Connected Ground using Flip chip Stud
Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect
- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity
Simple process not bulk micromachining (using flip-chip technique)
SDAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University23
Fabricated DAML (height = 17 microm)
Fabricated DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
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W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
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3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
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For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
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70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
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Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
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Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
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Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
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Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
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Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University24
Simulation Measurement
80(GHz) 163 185
94(GHz)
189 153
110(GHz)
222 213
Signal line width 44 microm (dBcm)
DAML Characteristic (Measurement)
Insertion loss versus Signal line height
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University25
Comparison of original DAML
SDAML Characteristic
0 20 40 60 80 100 120 14000
05
10
15
20
25
30
35
40
Inse
rtion
loss
[dB
cm]
Frequency [GHz]
DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)
60(GHz)
94(GHz)
120(GHz)
DAML(10 microm) 187 256 31
DAML(17 microm) 127 189 242
SDAML(17 microm) 107 141 167
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University26
CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
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CPW
Microstrip
DAML
Reduced Size DAML
λg 4 94 GHz
Electrical length (λg 4 94 GHz )
CPW 304 microm
Microstrip 266 microm
DAML 792 microm
RS-DAML 478 microm
Comparison of electrical length
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
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W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
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S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
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3-D W-band Single Balanced Active Mixer
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Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
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Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
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For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
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Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
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ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
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MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
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70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
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Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
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Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University27
Total Size 604 microm times 520 microm
Passive Device using DAML Technology W-band Reduced Size branch-line coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University28
Coupling loss 361 dB
Isolation -355 dB
Transmission loss 425 dB
Return loss -369 dB
Measurement result of W-band Reduced branch-line coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
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Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University29
Comparison of W-band branch line coupler
CaseCouplingloss (dB)
Return loss (dB)
Chip size(mm2)
Centerfrequency
(GHz)
1 (CPW)
About -35 About -20 05 ⅹ05 90
RSCDAML -361 -369 06ⅹ052 94
Passive Device using DAML Technology
Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995
17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217
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W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
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3-D W-band Single Balanced Active Mixer
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Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
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For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
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Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
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MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
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Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
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Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University30
W-band Hybrid Ring Coupler
Fabricated W-band hybrid ring coupler
Coupler size146 mm (diameter)
10 microm
50 Ω termination
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University31
S-parameters of W-band hybrid ring coupler
Transmission loss380 plusmn 008 dB
( 85-105 GHz)
Coupling loss
357 plusmn 022 dB
W-band Hybrid Ring Coupler
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University32
Comparison of W-band hybrid ring coupler
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 94
Thiswork -372 -335 -34 94
Hybrid Ring Coupler
This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
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Active Radar SensorTest image
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Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
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IntroductionPrivate issue
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Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
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Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
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Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
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Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
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Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
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80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
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Detector ndash TransitionSystem Specification
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Detector ndash OutputSystem Specification
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Size ndash Array SystemSystem Specification
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Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
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System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
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Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
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Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University33
Diameter 0888 mm
W-band reduced ring hybrid coupler
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University34
Reduced to 63 in area
Conventional Coupler
Diameter 1460 mm
Reduced Coupler
Diameter 0888 mm
Comparison of coupler sizes
Passive Device using DAML Technology
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Coupling loss 435 dB Isolation -4823 dB
Transmission loss 444 dB Return loss below -25 dB (all port)
75 80 85 90 95 100 105 110
-60
-50
-40
-30
-20
-10
0
S-p
aram
eter
[dB]
Frequency [GHz]
S21Thru S31coupling S23Isolation
Insertion loss
70 75 80 85 90 95 100 105 110 115
-40
-30
-20
-10
0
S-pa
ram
eter
[dB]
Frequency [GHz]
S11 S22 S33
Return loss
Measurement result of W-band reduced ring hybrid coupler
Passive Device using DAML Technology
35
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
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System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
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Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Comparison of W-band hybrid ring coupler
CaseTransmission
loss (dB)Coupling loss
(dB)Isolation
(dB)Diameter
(mm)
Centerfrequency
(GHz)
1(CPW) About -55 About -47 About -30 About 07 94
DAML -372 -335 -34 146 94
RSCDAML -444 -435 -4823 088 94
Passive Device using DAML Technology
Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392
36
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(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
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60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
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Measured Results
Passive Device using DAML Technology
41
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3-D W-band Single Balanced Active Mixer
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Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
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For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
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Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
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70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
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Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
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Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
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Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
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System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
(a) MIM coupling capacitor
(b) Stepped Impedance Perturbation
Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology
(a) (b)
Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007
Fabricated BPF
(b)
(a)
Passive Device using DAML Technology
37
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
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Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University38
60 65 70 75 80 85 90 95 100 105 110 115 120-40
-35
-30
-25
-20
-15
-10
-5
0
5
Inse
rtion
Los
s (d
B)
Frequency (GHz)
S11
S22
S21
S12
Simulation
Step Impedance Ratio 05
MIM Capacitor Size 75 microm2
Perturbation Length 275 microm
Measured Result of W-band BPF
- Insertion Loss 265 dB 97 GHz
- Relative Bandwidth 12
Passive Device using DAML Technology
38
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
60-GHz CPW-fed Dielectric-Resonator-Above-Patch
Antenna for Broadband WLAN Applications Using DAML Technology
Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005
Passive Device using DAML Technology
39
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Fabricated Antenna
(a) Fabricated patch using DAML
(b) 60 GHz RDRA
(c) Proposed antenna
(d) Antenna integrated by 60 GHz VCO
Passive Device using DAML Technology
40
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measured Results
Passive Device using DAML Technology
41
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
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Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
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Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University42
3-D W-band Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
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MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
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Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
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Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
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Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
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Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University43
Mixer with DAML coupler
Design strategy
MEMS coupler
MEMS library
Diode amp CPW lines
MMIC library
Schematic
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
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Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
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Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
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System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
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Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
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Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University44
Layout
Ring coupler based on DAML
70 nm gate
MHEMT
RF
IF2
LO
IF1
Dielectric post
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University45
For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm
Interference of DAML and CPW lines
Single Balanced Active Mixer
DAML
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University46
Process flow of the single balanced mixer
GaAs epi-wafer
Semi-insulating GaAs substrate
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University47
MHEMT
Semi-insulating GaAs substrate
Mesa etching
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University48
Semi-insulating GaAs substrate
MHEMT
Ohmic contact formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
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Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
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Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University49
ResistorMHEMT
Semi-insulating GaAs substrate
Resistor formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University50
MHEMT Resistor
Semi-insulating GaAs substrate
70 nm gate patterning narrow recess and gate metalization
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
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Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University51
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
First metal formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
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Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University52
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) deposition
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
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Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University53
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (Si3N4) RIE
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University54
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Second metal (air-bridge) formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University55
MHEMT Resistor Capacitor CPW GroundGround
Semi-insulating GaAs substrate
Dielectric (polyimide) post formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
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System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University56
MHEMT Resistor Capacitor CPW GroundGround
Hybrid ring coupler based on DAML
Semi-insulating GaAs substrate
DAML formation
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
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Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
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Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University57
70 nm MHEMT
Hybrid ring coupler
IF1 IF2
RF
LO
Chip size
18 mm times 21 mm
External balun for IFrsquos
W-band coupler size
146 mm (diameter)
Fabricated single balanced mixer
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
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LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University58
Conversion loss vs LO input power
Conversion loss25 dB
- RF frequency 94 GHz
- LO frequency 942 GHz
- RF power -10 dBm
- LO power 6 dBm
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University59
LO-to-RF isolation
LO-to-RF isolation
- LO power 0 dBm
lt -30 dB
- LO freq 9365-9425 GHz
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University60
Comparison of W-band mixers (1)
CaseMixer Design
FeaturesConversion
Gain (dB)Device
Technology
LOFrequency
(GHz)
RFFrequency
(GHz)
RF-LOIsolation
(dB)
1 SE active mixer 08 01 microm InP HEMT 94 945 -
2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27
3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -
4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18
5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -
6 SB diode mixer -10 01 microm InP HEMT 94 945 -
Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33
( SE Single Ended SB Single Balanced )
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University61
Comparison of W-band mixers (2)
- References
[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870
[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994
[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991
[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44
[6] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438
Single balanced active mixer
Low conversion loss high-performance 70 nm MHEMTs
High isolation hybrid ring coupler based on DAML
This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006
Single Balanced Active Mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Department of Electronics and Electrical Engineering Graduate School
Dongguk University
A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University63
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
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Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University64
IntroductionMotivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University65
IntroductionPassive amp Active
Active system conceptAlso known as a radar (using oscillator)
Transmit a signal and receive scattered waveform
Detected unwanted objects
Need to large computational resources
Passive system conceptHigh Sensitivity receivers are required
Antenna aperture affects resolution and SNR
Direct measure of temperature (sub K accuracy)
Can detect objects through differences in emissivity
ObjectTransmitted
ReceivedFreq
T
ObjectThermal noiseVol
T
Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1
Emissivity = radiation + reflectivity (from the natural background radiation)
Emissivity = radiation + reflectivity (from the signal source)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
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Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University66
InP Gunn Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Epi structure of InP Gunn diode
InP Gunn diodeEpi structure
67
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
1 Wafer Cleaning
2 Formation of top side trench
InP Gunn diodeProcess flow 1~2
1) Initial cleaning
TCE
Acetone
IPA
DI water rinse
1)Photo resist (PR) coating
2)Soft baking
3)Alignment amp Exposure
4)Development
5)Post baking
6)Wet etching
7)PR strip
68
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Cathode ohmic metalization
4 Integral heat sink (IHS) patterning lithography
InP Gunn diodeProcess flow 3~4
1)Cleaning
2)Oxide etching
3)Metal evaporation
4)Protection layer
1) Cleaning
2) Photo resist (PR) coating
3) Soft baking
4) Alignment amp Exposure
5) Post Expose Baking
6) Development
69
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
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Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
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Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
5 2nd seed evaporation
6 2nd plating (formation of support layer)
InP Gunn diodeProcess flow 5~6
1)Cleaning
2)2nd seed evaporation
1) Au plating
70
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
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Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
7 Wafer thinning (lapping amp polishing)
8 Anode ohmic metalization
InP Gunn diodeProcess flow 7~8
1) Wafer mount
2) Lapping 640 um lapping
3) Wafer de-mount
4) Cleaning
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)Reverse baking
6)Flood exposure
7)Development
8)Oxide etching
9)Metal evaporation
10)Lift-off
71
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
9 Overlay metallization
10 MESA etching
InP Gunn diodeProcess flow 9~10
1)Seed evaporation
2)Photo resist (PR) coating
3) Soft baking
4) Alignment amp Pre-exposure
5) Development
6) Oxide etching
7) Au plating
8) PR strip
9) Seed etching
1)Cleaning
2)Photo resist (PR) coating
3)Soft baking
4)Alignment amp Exposure
5)PEB (post exposure bake)
6)Development
7)Hard baking
8)Dry etching
9)PR strip
72
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
11 Gold amp 2nd seed etching
(Cathode)
InP
anode
Fabricated InP Gunn diode
InP Gunn diodeProcess flow 11
1) Cleaning
2) Oxide etching
3) Au etching
73
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
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Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University74
Packaged Diode
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
StudAuSn solder
AgSn solderLid
Gunn diode chip
Ceramic ring
Au wire
3-48 UNC-2A THREAD
Package element
InP Gunn diodePackaging
75
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Ceramic ring1 Ceramic ring junction
Stud
(3-48 UNC-2A THREAD)
2 Die attachChip
InP Gunn diodePackage process 1~2
76
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
3 Maltese Cross BondingMaltese Cross
4 Lid junctionLid
InP Gunn diodePackage process 3~4
77
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
X-ray image of InP Gunn diode Packaged InP Gunn diode
InP Gunn diodePackaged Diode
78
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
DC I-V measurement result
InP Gunn diode chip Packaged InP Gunn diode
InP Gunn diodeDC characteristic
79
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Measurement results of packaged InP Gunn diode
Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]
1 124 299 94 178
2 117 260 9398 16
3 97 299 9425 156
4 109 349 939 166
5 93 349 938 164
Oscillation characteristics of fabricated InP Gunn diode
InP Gunn diodeRF characteristic
80
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University81
Transceiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University82
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University83
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University84
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University85
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University86
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University87
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University88
Flip chip packaging configuration
Cross section Top view
Active Radar SensorFlip-chip
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University89
Active Radar SensorFlip-chip
(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm
(a) (b)
(c) (d)
(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold
(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University90
75 80 85 90 95 100 105 110 115-35
-30
-25
-20
-15
-10
-5
0
S-pa
ram
eter
[dB
]
Frequency [dB]
Insertion loss Return loss
Reference Bump material Bonding condition Lossfrequency
[1] Au 350 20 gpillar 02 dB77 GHz
[2] Au 275 230 Nmm2 02 dBNA
This work Au Ag epoxy 110 30gbump 0205 dB94 GHz
Active Radar SensorRF Characteristic
[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997
[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University91
Active Radar SensorTest image
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University92
Reference Bump material Bonding temperature Die shear strength [mg 2]
[1] Indium
100 155
150 219
200 438
[2]ACP 220 105
ACF 220 107
[3] CuSn 260 217
This work AuAg epoxy 110 573
The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g
[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004
[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003
[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010
Active Radar SensorShear test
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University93
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University94
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
Taejong Baek
Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering
Graduate SchoolDongguk University
Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University96
Introduction
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University97
Introduction
The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats
Traditional methodMetal detectors
X-ray imaging systems
Insufficient for modern and health threatsPlastic and liquid explosive
Plastic or ceramic guns and knives
Ionizing radiation
Advanced methodMillimeter-waveterahertz security systems
Motivation
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University98
IntroductionPrivate issue
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University99
Radiation law
Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law
Object Emissivity ()
Human skin 65 ~ 95
Plastics 30 ~ 70 depending on type
Paper 30 ~ 70 depending on moisture content
Ceramics 30 ~ 70
Water 50
Metal ~ 0
Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1
Radiation = Object reflectivity + Object emissivity
Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object
Background and Theory
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University100
Target SpecificationSystem Arrangement
Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )
Spatial resolution (le 5 cm2)
1degC temperature resolution at (ge 1 Hz)
Fullndashbody scanning (3m stand-off )
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University101
Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity
∆푻 =푻풔풚풔∆풇흉
Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)
흉 =풕풏풎
number of samplings (sn) reflector scanning cycle time (rt)
풕 =풎
풏 times 풔풏풓풕
NETDSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University102
Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕
whole imaging measurement time (t)
풕 =풎
풏times 풔풏풓풕=
ퟐퟎퟒퟖ
ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄
in this case integration time (흉) is
흉 =풕풏풎
=ퟏퟔퟐퟎퟒퟖ
= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓
Integration TimeSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University103
Radiometer input signal (thermal noise) power
푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)
where Δf is the bandwidth in hertz (set 20 GHz)
푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎
Lens concentrate thermal noise ratio (dB)
푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂
times 풔풉풂풑풆풎풂풕풄풉 = 10dB
Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain
Noise TemperatureSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University104
Basic radiometer model
The system noise temperature at the receiver input is Tsys= TA+ Trec
∆푻 =푻풔풚풔∆풇흉
where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant
System elements to be considered for high performance
1 Antenna return loss
2 LNA return loss noise figure
3 Frequency bandwidth of each element
4 Transition return loss insertion loss
5 Diode noise temperature
System RequirementRequirements
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University105
Component Parameter Target Specification
System
NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure
le 1 Kle 5 cm1 scenesec20 GHzle 15 dB
LNANoise figureGainReturn loss
le 10 dBge 60 dB
le ndash15 dB
AntennaGainReturn lossVSWR
ge 15 dBi
≦ ndash25 dB≦ 12
DetectorOutput voltage rangeSensitivity
100 mV ~ 1000 mVgt 500 mVmW (0 dBm)
Radiometer Type System Characteristics
Dickeradiometer
Super heterodyne receiver
superior low noise temperaturecomplicated structureneed local oscillatorhigh cost
Full powerradiometer
Directndashdetection receiverlow noise temperaturesimple structurelow power consumption
Target SpecificationSystem Arrangement
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University106
Development of Radiometer Receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University107
An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as
푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ
푨
with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area
Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution
AntennaGain
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University108
Returnlossisameasureofthereflectedpowerandforwardpowerratio
푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ
Specification
Frequency range (GHz) 75 ~ 110
Waveguide type WR-10
VSWR (max) 11
Mid-band Gain (dB Typ) 175
Total Length (L) 32
Aperture size (W times H) mm2 9 times 6
AntennaEfficiency
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University109
Antenna ndash array for multi-channel
Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system
Antenna
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University110
Specifications
Frequency89 GHz ~ 99 GHz
(center frequency 94 GHz)
Center wavelength 3191 mm(c=υλ)
Diameter le 200 mm
Material Teflon
Viewing angle plusmn113deg(target distance 3m)
LensLens - specification
Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method
Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University111
LNA ndash OscillationSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University112
80 85 90 95 100 105 110
-80
-60
-40
-20
0
20
40
60
80
S-Pa
ram
eter
[dB
]
Frequency [GHz]
S11
S21
S12
S22
LNA module ndash 4-stage
4-stage LNA module measured characteristics
Average linear gain 658 dB 81 ~ 102 GHz
682 dB 94 GHz
LNA
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University113
Detector ndash TransitionSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University114
Detector ndash OutputSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University115
Size ndash Array SystemSystem Specification
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University116
Radiometer
16 receivers array multi-channel radiometer
Radiometer Receiver
radiometer receiver
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University117
Development of Security Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University118
System block diagramSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University
24V15V 12V 5V 33V 33V
ACG
Power2
(Floating)
Power2
(Floating)
Power2
(Floating)
DirectLine
(Floating)
NTSC
CAM
IR
CAM
DC
Cont
FAN
NTSC Signal
(with Ground)
IR Signal
(with Ground)
DC 12VDC 12V
DC 12V
DC 12V
EmbeddedSystem
DC 5VSerial to USB
RS232 USB To PC
(with Ground)
Step motor DriverControl signal
Step
Motor
DC 24V
Encoder
MMW Sensor
USB To PC
(with Ground)
Drain
Gate
DC 15V
+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1
AC GKeyboard
Mouse USB
VGA
WiFi
CAM1
CAM2
MonitorTo Sensor Part
(with Ground)
To Sensor Part
(with Ground)
+V-V FG ACAC
DirectLine
(Floating)
Sensor part
PC part
Power part
DC 15V
DC 5V
G
FG FG
G
ADC1~16 Ch
G
Shield box
Circuit mapSecurity Screening System
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University120
Measurement SWSecurity Screening System
Ch-1 Ch-2
Ch-3 Ch-4
Ch-5 Ch-6
Ch-7 Ch-8
Ch-9 Ch-10
Ch-11 Ch-12
Ch-13 Ch-14
Ch-15 Ch-16
CCD IR
16 m
(variable pixel)
06 m (16 pixel)
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University121
Comparison with Commercial MMW Imaging
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University122
Name L3 safeviewprovision100
Agilent Qinetiq Smiths Tadar
Sago Trex BrijotBIS-WDS
ThruVisionT4000
This Work
base SPO 20 ST150 Real Time Imager
Application Portal Portal Portal Stand-off8 ndash 30m
Portal Stand-off5m
Stand-off Stand-off3-10m
Stand-off3-10m
Stand-off3m
ActivePassive
Active Active Passive Passive PassiveActive
Passive Passive Passive Passive Passive
Frequency(Bandwidth)
24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)
76-94GHz 76-94GHz 90GHz(20 GHz)
250GHz 94GHz(10 GHz)
ImagingSystem
Source ampReceiverarray rotates around subject
Active antenna array programm-able fresnelzone-plate
Folded Schmidtcamera conical scan off-axis rotating mirror
Mechanical Tilted rotatingmirror
Frequency scanned antenna and reflector
Phased array of freqscanned antennas
Receiverarray of multi-channelscannedantennasand reflector
Receivers 1 64 64 24 1 232 16 16
Receivertechnology
InPMMIC
InP Direct detection
InPHEMT MMIC
GaAsSchottkymixer
GaAs Direct detection (z-b Schottkydiode)
SystemNETD
5K 1K 1-3K 6K 1K 1-15K le 2K
SpatialResolution
05cm 05cm 075cm2cm
03degree 10mm 6mrad 6mrad128times192pixel
5cm 3cm gt45 cm16times128 pixel(variable)
Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz
Aperture 90cm 80cm 60cm 18cm 12cm 20cm
DimensionsL times W times H
150 times 150 times 270
90 times 10 times 90
250 times 160 times 220
71 times 33 times 48
50 times 50 times110
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University123
Specification Brijot (indoor) This work (indoor)
Center Frequency 90 94
Bandwidth (Δf) 20 10
No of Receiver 16 16
System NETD (ΔT) 1 K le 2 K
Spatial Resolution 5 cm 5 cm
Image Quality clearly noisily
Reflesh Rate 4 ~ 10 Hz 1 Hz
∆푻 =푻풔풚풔
ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲
푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲
∆푻 =푻풔풚풔
ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲
Our system
Brijot
DiscussionSystem Noise Temperature
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University124
Video Demo
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University125
Video Demo2011 01 31
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University126
Conclusion
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2
Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University127
ConclusionSummary
Passive Imagingsensor
Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size
77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm
LNA module Frequency Gain (1st) Returen Loss (1st)
Gain (4st) Returen Loss (4st)
Noise Figure (Chip)
82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB
Detector module
Frequency Operation range
Output voltage Minimum detectable
power
Sensitivity (input 0 dBm)
75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW
Securityscreening
System NETD Spatial resolution
Refresh rate ReflectorScan angle
MMW lens diameter
2K 4cm 1Hz plusmn 20 deg 20 cm
Type 82~102 GHz Passive imaging (indoor)
Bandwidth 20 GHz
Dimension (cm) 50 times 50 times 110
IR and CCD image fusion
Spatial resolution 45 cm (16 times 128 pixel)
Temperature sensitivity 2