What's New in IntelliSuite 8.5?

IntelliSuite 8.5What’s new?

Tools for MEMS Professionals

New in v8.5

Clean Room Process visualization.

RECIPE 3D & IntelliEtch3D RIE/ICP/BOSCH etch simulation. Ab initio wet and dry etch simulation.

Synple 23D System Modeling. New elements, improved bus based interface.

3D Builder Bullet proof, one click, all-hex meshing.

MultiphysicsFluid structure interaction, faster engine, multi-processing, fast impedance extraction.

Modern interfaceClean, customizable, expressive UI.

Clean Roomintroducing …

your virtual fab

What is Clean Room?

Process simulation and visualizationState of the art 3D process modeling

RECIPERIE/ICP/Bosch etch simulation STS etch database

IntelliEtchAb initio based etch modeling wet and dry etch modeling

MEMaterialMaterial databases & process optimization

IntelliMaskEasy, yet powerful mask layout capabilities. Scripting based automated layout

IntelliFABProcess traveller creation and visualization. Auto meshing capabilities

Process FlowSimulation

Visualize Complex process flows

Courtesy, Prof Tim Dallas, Texas Tech

Visualize Complex process flows

Courtesy, Prof Tim Dallas, Texas Tech

Visualize Complex process flows

Courtesy, Prof Tim Dallas, Texas Tech

Visual complex mems

Quick cross

sectioning

Benefits:

Process Debug

Failure Analysis

Review Sessions

Operator Training

Dynamic cross sections

Courtesy, Prof Jason Clark, Purdue University

MUMPS, 3 level Poly SUMMiT V, 5 level Poly

Courtesy, Prof Tim Dallas, Texas Tech University

Photo realistic rendering

Texas Instruments, DLP Mirror Visualization

Etch & release modeling

Full CMOS simulation

Full CMOS simulation (2)

Automated Hex Meshing

… And Tet Meshing

Future

• Lithography processes

• Photoresist profiles (SU-8, PDMS)

• Deposition processes (CVD, Evaporation, sputtering, plating)

RECIPE & IntelliEtch

State of the Art Etch Simulation

RECIPE & IntelliEtch

RECIPE 3DRIE, ICP and Bosch Etch simulator

Validated databaseExperimental etch database Rigorous validation experiments

Real world usagePredict and fine tune etch lag, sidewall angle and footing

IntelliEtchAb initio wet and dry etch simulator. Atomistic simulations

Export to FEADirect export to IntelliSuite tools

Real world usagePredict high order planes, surface morphology, design corner compensations and composite etches

RSM derived etch database

Response surface matrix Etch rate as a function of APC and Coil Power

Etch characterization experiments (1)

Etch characterization experiments (2)

ICP/BOSCH ETCHING

Ion assisted etch

Reactive Ion Etching

Combination etch: Isotropic+Bosch

IntelliEtch

Atomistic Etch Simulator

IntelliEtch

Validated simulatorDetailed experimental backing

Ab initio effectsFirst principle based etcher, includes effects of steric interaction, backbond weakening, impurity micromasking

Composite processingEffects of multi-masking, multiple process steps

SpeedFast simulation speed. Results in 5-30 minutes depending upon resolution

Export to FEADirect export to IntelliSuite tools

Validated databaseDatabase for etching based upon pioneering work of Dr Sato at U Nagoya

Experimental validation

Etched Silicon Sphere Etch Results Simulation Results

Dr. Sato et al, U Nagoya Japan

Experimental validation

Sphere etching results

Experiment, 34 wt% KOHSimulation: 30 wt% KOH

Experimental validation

110 um100 min

166 um150 min

225 um200 min

166.39 um152.54 min

225.82 um205.64 min

110.21 um102.38 min

SEM Pictures © 2001 Gesselschaft fur Mikroelektronikan-wendung Chemnitz mbH.

Experimental validation

SEM Pictures © 2001 Gesselschaft fur Mikroelektronikan-wendung Chemnitz mbH.

166 um150 min

189 um170 min

225 um200 min

226.94 um213.60 min

190.63 um181.16 min

166.43 um159.53 min

CPU Time244 s

Experimental validation

SEM Pictures © 2001 Gesselschaft fur Mikroelektronikan-wendung Chemnitz mbH.

166 um150 min

166 um150 min

56 um50 min

168.33 um161.56 min

56.11 um61.28 min

168.33 um161.56 min

Experimental validation

110 um100 min

166 um150 min

225 um200 min

56 um50 min

166.40 um139.62 min

110.93 um95.27 min

226.13 um190.44 min

56.89 um51.27 min

© 20

01 G

esse

lscha

ft fu

r Mikr

oelek

tronik

an-w

endu

ng Ch

emnit

z mbH

.

56 um50 min

Ab initio effects

Adsorption of impurities: Leads to micromasking effects

Sterif effects and back bond weakening: Atomic level (first principle) simulation are needed to compute these effects

Partial OH termination Full OH termination

Steric interaction: OH-OH Multiple steric interactions: OH-H at FN and SN

M. A. Gosalvez et al.: Multiscale modeling of chemical etching 471

Fig. 4 – Comparison between (a) experiment [3], (b) simulation using the “bond-weakening” approachand (c) simulation incorporating the e!ect of indirect second neighbours.

ond neighbour). However, if the chosen atom has two or three first neighbours, the rigidityof the bond configuration leads to a significant interaction between the hydroxyl group andthe terminating hydrogen, e!ectively reducing the probability with which the hydroxyl willactually terminate the dangling bond in the presence of an indirect second neighbour. Theseconsiderations imply that the probability of removal of a surface atom should be multipliedby the probability with which each hydroxyl group will actually terminate the correspondingdangling bond depending on the local environment.

We have discussed here the interaction between a hydroxyl terminating the target atomand a hydrogen terminating an indirect second neighbour. Similarly, we can consider theinteraction with another hydroxyl. The e!ect of having both interactions can only be discussedin a frame that considers the amount of surface coverage by hydroxyl groups [7]. However,the conclusions of the present study are not a!ected by considering an average of the e!ectof both interactions.

In order to use the above results in kinetic Monte Carlo simulations, we consider theprobability of removal of a surface atom as given by the Boltzmann expression p = e!!E/kBT ,where "E is defined as the energy excess of the average energy per bond E (defined below)over a critical energy Ec:

"E = kBT ln!

1 + e(E!Ec)/kBT"

! max(0, E " Ec).

The critical energy Ec acts as a threshold below which bond-breaking occurs with probabilityp ! 1. The average energy per bond E is assigned to the chosen surface atom depending onthe neighbourhood configuration, and is defined in terms of the energy matrix !ij discussedpreviously. We identify each surface atom with its neighbourhood configuration, referredto by (n;m1,m2, . . . ,mn; l), meaning that the chosen surface atom has n first neighbours(n = 1, 2, 3) and each of the n first neighbours has itself mj first neighbours (j = 1, 2, . . . , n;mj = 1, 2, 3, 4), l of which are indirect second neighbours to the chosen atom. The averageenergy per bond E for atom (n;m1,m2, . . . ,mn; l) is then defined as

E =1n

n#

j=1

!(4!n),(4!mj) + l · e · (1 " "1n).

The first term corresponds simply to the average of the sum of the energies of the bonds tothe n first neighbours, the energy of each bond being obtained by looking at the number of

110 um100 min

166 um150 min

56 um50 min

Ab initio effects

Experimental results: Wagon wheel study

Simulation: No ab initio effects Simulation: With ab initio effects including back-bond weakening and steric interaction

Surface morphology prediction

Pyramid like morphology on 100 Sisubject to wet anisotropic etching

Simulation results predict pyramid formation

Arbitrary Cut Planes <533>to understand the physics

Surface morphology prediction

1 Micromasking of apex2 Floor moves down fast3 Edges are stable4 Facets are very stable

Hillock formation prediction

Surface morphology prediction

Relation between pyramidal hillocks on (100) and polygonal steps on (h h h+2)

Higher order plane etching

D. Saya, Sensors & Actuators A95 (2002)

Simulation results

Simulate composite MEMS processes

Composite processes, Shikida Mitsuhiro, J. Micromech. Microeng. 14

Combination of multi-step mask transfers, oxide and nitride layers, sacrificial layer deposition and wet etching and DRIE processes.

Composite MEMS processes for micro valves. Combination of DRIE and wet etching.

A. Baldi, Sensors and actuators B 114 (2006)

Simulate composite MEMS processes

Simulate composite MEMS processes

Non flat surfaces: simulate roughness and waviness effects

Output to FEA

Interface with analysis tools: Direct export to IntelliSuite and other industry formats

Modern interface

Easy to use, user focused interface

Bullet Proof All-Hex Mesher

Mesh complex geometries in seconds

One click meshing

Bullet proof all hex meshing

Mesh Complex GeometriesEasily deal with arbitrary non-manhattan geometries

Automatically deal with multi-layer connectivity

Planarized Conformal

Meshing time: 20 seconds

Mask to mesh

Self Adapting Meshing

Original Self AdaptingMesh

Dramatically Reduce Compute Times

Specify layers of interest(Ignore Dimples etc)

Specify Processing Intent Specify layer thickness & elevation

(Poly0, Poly1 etc)

Fastfield Multiphysics

Fluid Structure InteractionCoupled 3D Fluid-Structural-Piezo

Improved sub-modelingFaster sub-modeling capabilities

Fluidics3D electrowetting simulations. Advanced chemical reactions. Faster fluidics engine

Fast Impedance Extraction3D MoM based fast field full wave solver

Fast BAW/SAW SolverParallelized 3D Impedance extractor. Accurately capture phase ripple effects.

64 bit, MultiprocessingShared memory processing. 3-6X speed improvements. Handle larger problem sizes. Faster file operations.

What is Fastfield Multiphysics?

Coupled solver formulationANSYS, Algor, Comsol, etc are all pure Finite Element tools

Best solver for each physics domainBoundary Element Method (BEM): Electrostatics, Electromagnetics

Finite Element Method (FEM): Thermal, Mechanical and Electromagnetics

Volume of Flow (VoF) and Finite Volume (FV): Fluidics, Electrokinetics, Chemical Reactions

Advanced pre-correction and solver techniquesPre-corrected FFT (pFFT++), GMRES, Arnoldi, OpenMP based multi-processor solvers

Why Fastfield Multiphysics?

Speed and efficiency2-10X Faster than pure FEA formulation (Algor, Ansys, Comsol, etc)

Handle large real world problems

Surface meshing vs volume meshesInternal volumes, air gaps, etc do not need to be meshedEase of meshing, no costly re-meshing during deformation

Ease of convergenceQuickly run your analysis without convergence issuesDeal with large deformations, contact and post-contact without convergence issues

Flow evolution in a piezoelectric membrane micro pump

Example: Valveless piezoelectrically actuated micropump

Outlet

Inlet

PZT actuated membrane

Flow chamber

Piezo-acoustic wave generation

Multi-processor enabled BAW/SAW simulationFast impedance and phase ripple calculations

1 2

Phase ripple ina BAW device

Fast ImpedanceExtraction

Enhanced Chemical ReactionMicrofluidics with enhanced transport kinetics1 2

Two reactants meeting at the junction and reacting to form a new analyte. Support for multivalent reactions is new in v 8.5

Enhanced ion drag calculations allows you to optimize elbow turns to minimize concentration skews

Enhanced transport behaviorMultivalent Ion drag calculations in electrokinetic transport

Concentration skewing Minimized concentration skewing

Electrowetting on dielectric (EWOD)3D Electrowetting calculations

3

Droplet moving around a pre-set track (top view) Droplet fission (top view)

ElectroMagnetics

3D FEA and MoM solverSeparate solvers for Full Wave, Quasistatic & Magnetostatic solutions

Self adapting meshFaster solution with better convergence

Coupled Mech-EMag Only coupled tool on market today

Fast Impedance ExtractionWideband impedance calculations. 0-40 GHz without any issues.

Standard formatsExport directly to Touchstone and SPICE

64 bit, MultiprocessingShared memory processing. 3-6X speed improvements. Handle larger problem sizes

SYNPLE 2Schematic driven

design

Synple v2

Revamped UIAuto wiring, easy to read schematics. Reflective UI. Simplified parameter entry.

Multiphysics BusNew multiphysics bus based wiring. No more messy wiring!

3D System modelingVisualize your results in 3D. Direct export to VisualEase.

ManagersNew material, technology and simulation managers

Multiphysics based elementsCoupled Thermal, Electrical, Mechanical, Piezoresistive and Electronic simulation

Designed for MEMSFirst schematic tool specifically designed for MEMS

Schematic editor designed for MEMS

Modern interface

Technology managers

Global Layer PropertiesAutomatically included in relevant calculations

Material DatabaseMaterial properties are automatically inserted into

relevant calculations

Synplified data entry

Set Layer and Material Simplified parameter entry

Geometry reflected in schematic!

Analysis VisualizationFull 3D Animation of System Simulations

3D Visualization of System Simulation

1:1

Modern InterfaceExpressive toolbars & icons

Pixel perfect interfaces

Entities

Model

Loads

BoundaryConditions

Meshes

Info

Layers

Materials

AmbientConditions

GlobalDefinitions

Document Icons

Attention to detail = Pleasurable, consistent experience

Refined User Experience

Direct Manipulation Updated Graphics Engine Customize toolbars, menus, keyboard shortcuts

Model and Result Explorers

Contextual Help SystemEasy to use, online help. Extensive Tutorials.

Vista ReadyDesigned for Windows XP, 2000 and Vista

Significant update across the board

Process visualizationEtch simulation

Fastfield MultiphysicsRobust Meshing

Schematic based designRevamped UI

Thank you

ありがとう•謝謝 • ध"यवाद

Grazie •Merci • Gracias • Danke •Obrigado • Dank U •Terima Kasih

www.intellisense.com