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a seminar on 3D transistro
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3D TRANSISTOR
ByRuchira Shivsharan
INDEXIntroduction
Moore’s law
Types of Multigate Transistor
Planar double gate transistor
FlexFET
FinFET
Tri-Gate transistor
Gate all around FET
3D transistor symbol and pin function
Difference between planar and 3d transistor
Key points
3D tri-gate transistor benefits
Fun Facts
Application
IntroductionTri-Gate transistors, the first to be truly three-dimensional,
mark a major revolution in the Semiconductor industry. The
semiconductor industry continues to push technological
innovation to keep pace with Moore’s Law, shrinking
transistors so that ever more can be packed on a chip.
However, at future technology nodes, the ability to shrink
transistors becomes more and more problematic, in part
due to worsening short channel effects and an increase in
parasitic leakages with scaling of the gate-length
dimension. In this regard Tri-gate transistor architecture
makes it possible to continue Moore’s law at 22nm and
below without a major transistor redesign. The physics,
technology and the advantages of the device is briefly
discussed in this paper.
“”THE NUMBER OF TRANSISTORS
INCORPORATED IN A CHIP WILL
APPROXIMATELY DOUBLE EVERY 24 MONTHS.“
—
GORDON MOORE
Types of Multigate Transistor
Planar double-gate transistor
Flexfet
FinFET
Tri-gate transistor
Gate-all-around (GAA) FET
Flexfet
Highly scalable due to its sub-lithographic channel length.
Top gate MOSFET
Bottom gate JFET
The top and bottom gates provide transistor operation.
The top gate operation affects the bottom gate operation
and vice versa.
Flexfet was developed, and is manufactured, by American
Semiconductor.
FinFET Based on the earlier DELTA (single-gate)
transistor design.
The conducting channel is wrapped by a thin
silicon "fin”.
The thickness of the fin determines the
effective channel length of the device.
The Wrap-around gate structure provides a
better electrical control over the channel .
Helps in reducing the leakage current and
overcoming other short channel effects.
Gate-all-around (GAA) FET
The gate material surrounds the channel region on all
sides.
Gate-all-around FETs can have two or four effective gates.
Gate-all-around FETs have been successfully built around
a silicon nanowire. and etched InGaAs nanowires
Tri-gate transistor Reduction in power dissipatio
n
Increased pathway
for electrical signals
Drives 20% more
current than
traditional planar
transistors
High switching
speed
High performance with reduced
size
Better control
over leakage current
due to 3D structure
Moore’s law
Wrap around channel
suppression of "off-
state" leakage current
enhanced current in
the "on" state
Multigate device symbol and pin function
Also called as multigate
device or multiple gate field-effect
transistor (MuGFET) refers to a MOSFET
incorporates more than one gate into a
single device. The multiple gates may be
controlled by a single gate electrode,
in the multiple gate surfaces act electrically
as a single gate, or by independent gate
electrodes.
Key Points
•Intel is introducing revolutionary Tri-Gate transistors on its 22 nm
logic technology
•Tri-Gate transistors provide an unprecedented combination of
improved performance and energy efficiency
•22 nm processors using Tri-Gate transistors, code-named Ivy Bridge,
are now demonstrated working in systems
•Intel is on track for 22 nm production in 2H ‘11, maintaining a 2-year
cadence for introducing new technology generations
•This technological breakthrough is the result of Intel’s highly
coordinated research-development-manufacturing pipeline
•Tri-Gate transistors are an important innovation needed to continue
Moore’s Law
•The original transistor built by Bell Labs in 1947 was large enough that it was pieced together by hand. By contrast, more than 100 million 22nm tri-gate transistors could fit onto the head of a pin.
•More than 6 million 22nm tri-gate transistors could fit in the period
•A 22nm tri-gate transistor's gates that are so small, you could fit more than 4000 of them across the width of a human hair.
•If a typical house shrunk as transistors have, you would not be able to see a house without a microscope. To see a 22nm feature with the naked eye, you would have to enlarge a chip to be larger than a house.
•Compared to Intel's first microprocessor, the 4004, introduced in 1971, a 22nm CPU runs over 4000 times as fast and each transistor uses about 5000 times less energy. The price per transistor has dropped by a factor of about 50,000.
•A 22nm transistor can switch on and off well over 100 billion times in one second. It would take you around 2000 years to flick a light switch on and off that many times.
FUN FACTS: EXACTLY HOW SMALL (AND COOL) IS 22 NANOMETERS?
The shorter the gate, the faster the computer can
operate. While the new 3D transistors will have a gate
length of 22 nanometers
Application
Computers implementing 3D silicon transistors will not
only be able to run faster, but should also weigh less, and
generate less heat than their present-day flat-transistor-
using counterparts.
Video Clip on 3D TRANSISTOR
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